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FR2694657B1 - Dispositif a semiconducteurs et procede de fabrication. - Google Patents

Dispositif a semiconducteurs et procede de fabrication.

Info

Publication number
FR2694657B1
FR2694657B1 FR9309741A FR9309741A FR2694657B1 FR 2694657 B1 FR2694657 B1 FR 2694657B1 FR 9309741 A FR9309741 A FR 9309741A FR 9309741 A FR9309741 A FR 9309741A FR 2694657 B1 FR2694657 B1 FR 2694657B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9309741A
Other languages
English (en)
Other versions
FR2694657A1 (fr
Inventor
Nakamoto Takahiro
Yagi Tetsuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2694657A1 publication Critical patent/FR2694657A1/fr
Application granted granted Critical
Publication of FR2694657B1 publication Critical patent/FR2694657B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR9309741A 1992-08-06 1993-08-06 Dispositif a semiconducteurs et procede de fabrication. Expired - Fee Related FR2694657B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4209940A JPH0661266A (ja) 1992-08-06 1992-08-06 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
FR2694657A1 FR2694657A1 (fr) 1994-02-11
FR2694657B1 true FR2694657B1 (fr) 1996-02-23

Family

ID=16581185

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9309741A Expired - Fee Related FR2694657B1 (fr) 1992-08-06 1993-08-06 Dispositif a semiconducteurs et procede de fabrication.

Country Status (3)

Country Link
US (1) US5470767A (fr)
JP (1) JPH0661266A (fr)
FR (1) FR2694657B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524937B1 (en) * 2000-08-23 2003-02-25 Tyco Electronics Corp. Selective T-gate process
US6596591B1 (en) * 2000-12-18 2003-07-22 Advanced Micro Devices, Inc. Methods to form reduced dimension bit-line isolation in the manufacture of non-volatile memory devices
US6482688B2 (en) 2001-03-30 2002-11-19 Texas Instruments Incorporated Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
EP1921669B1 (fr) * 2006-11-13 2015-09-02 Cree, Inc. HEMTs à base de GaN dotés de plaques de champ enterrées
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
CN114975284A (zh) * 2018-08-08 2022-08-30 联华电子股份有限公司 一种具有不对称功函数金属层的半导体元件
CN110581170A (zh) * 2019-08-13 2019-12-17 中山市华南理工大学现代产业技术研究院 具有Г型栅的GaN基MIS-HEMT器件及制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594173A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の製造方法
JPS6159881A (ja) * 1984-08-31 1986-03-27 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
JPS62114276A (ja) * 1985-11-14 1987-05-26 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS62156876A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 半導体装置
JPS6315475A (ja) * 1986-07-07 1988-01-22 Fujitsu Ltd 電界効果型半導体装置の製造方法
US4700462A (en) * 1986-10-08 1987-10-20 Hughes Aircraft Company Process for making a T-gated transistor
JP2519756B2 (ja) * 1987-10-29 1996-07-31 富士通株式会社 半導体装置の製造方法
JPH0246740A (ja) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp ゲート電極形成方法
JPH0279437A (ja) * 1988-09-14 1990-03-20 Mitsubishi Electric Corp 半導体装置の製造方法
JPH02105423A (ja) * 1988-10-14 1990-04-18 Nec Corp 電界効果型半導体装置の製造方法
JPH02105424A (ja) * 1988-10-14 1990-04-18 Nec Corp 電界効果型半導体装置の製造方法
US4959326A (en) * 1988-12-22 1990-09-25 Siemens Aktiengesellschaft Fabricating T-gate MESFETS employing double exposure, double develop techniques
JPH02232940A (ja) * 1989-03-06 1990-09-14 Nec Corp 半導体装置の製造方法
US5196358A (en) * 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
JP2773425B2 (ja) * 1990-11-21 1998-07-09 日本電気株式会社 電界効果トランジスタの製造方法
JPH04223342A (ja) * 1990-12-26 1992-08-13 Mitsubishi Electric Corp 半導体装置のゲート電極とその製造方法

Also Published As

Publication number Publication date
FR2694657A1 (fr) 1994-02-11
JPH0661266A (ja) 1994-03-04
US5470767A (en) 1995-11-28

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Legal Events

Date Code Title Description
ST Notification of lapse