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EP2104006B1 - Single-body double spiral and method for manufacturing same - Google Patents

Single-body double spiral and method for manufacturing same Download PDF

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Publication number
EP2104006B1
EP2104006B1 EP08153094A EP08153094A EP2104006B1 EP 2104006 B1 EP2104006 B1 EP 2104006B1 EP 08153094 A EP08153094 A EP 08153094A EP 08153094 A EP08153094 A EP 08153094A EP 2104006 B1 EP2104006 B1 EP 2104006B1
Authority
EP
European Patent Office
Prior art keywords
balance spring
double
silicon
double balance
collet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP08153094A
Other languages
German (de)
French (fr)
Other versions
EP2104006A1 (en
Inventor
Pierre-André Bühler
Marco Verardo
Thierry Conus
Jean-Philippe Thiébaud
Jean-Bernard Peters
Pierre Cusin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nivarox Far SA
Nivarox SA
Original Assignee
Nivarox Far SA
Nivarox SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nivarox Far SA, Nivarox SA filed Critical Nivarox Far SA
Priority to DE602008001778T priority Critical patent/DE602008001778D1/en
Priority to AT08153094T priority patent/ATE474250T1/en
Priority to EP08153094A priority patent/EP2104006B1/en
Priority to SG200901887-0A priority patent/SG155864A1/en
Priority to CN2009101346805A priority patent/CN101539754B/en
Priority to TW098109210A priority patent/TWI463280B/en
Priority to KR1020090023836A priority patent/KR20090101118A/en
Priority to US12/408,130 priority patent/US9459589B2/en
Priority to JP2009069979A priority patent/JP5280903B2/en
Publication of EP2104006A1 publication Critical patent/EP2104006A1/en
Priority to HK10102763.9A priority patent/HK1136358A1/en
Application granted granted Critical
Publication of EP2104006B1 publication Critical patent/EP2104006B1/en
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Classifications

    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00Mechanisms for stabilising frequency
    • G04B17/04Oscillators acting by spring tension
    • G04B17/06Oscillators with hairsprings, e.g. balance
    • G04B17/066Manufacture of the spiral spring
    • GPHYSICS
    • G04HOROLOGY
    • G04BMECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00Mechanisms for stabilising frequency
    • G04B17/32Component parts or constructional details, e.g. collet, stud, virole or piton
    • G04B17/34Component parts or constructional details, e.g. collet, stud, virole or piton for fastening the hairspring onto the balance
    • GPHYSICS
    • G04HOROLOGY
    • G04DAPPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0002Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
    • G04D3/0035Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the regulating mechanism
    • G04D3/0041Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the regulating mechanism for coil-springs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49609Spring making

Definitions

  • the invention relates to a double spiral and its method of manufacture and, more particularly, to a double spiral formed in one piece.
  • the regulating member of a timepiece generally comprises an inertia flywheel called a balance wheel and a resonator called a spiral. These pieces are decisive for the running quality of the timepiece. Indeed, they regulate the movement, that is to say they control the frequency of the movement.
  • the document FR 2,447,571 discloses a pendulum coupled with two coil springs mounted in series to maintain a center of gravity on the balance shaft.
  • the document EP 0 732 635 discloses the manufacture of a micromechanical component manufactured from a monocrystalline silicon plate and then covered with a layer of a material of improved hardness and coefficient of friction.
  • the object of the present invention is to overcome all or part of the disadvantages mentioned above by proposing a double monoblock spiral whose thermo-elastic coefficient can be adjusted and which is obtained by means of a manufacturing process which minimizes assembly difficulties.
  • the invention relates to a double spiral according to claim 1.
  • the invention relates to a timepiece characterized in that it comprises a double spiral according to one of the preceding variants.
  • the invention relates to a method of manufacturing a double spiral according to claim 13.
  • Process 1 comprises successive steps intended to form at least one type of double monobloc spiral which can be integrally formed of silicon-based materials.
  • the first step 100 is to provide a substrate 3 of the silicon-on-insulator type (also known as the acronym English SOI).
  • the substrate 3 comprises an upper layer 5 and a lower layer 7 each composed of silicon-based material.
  • the substrate 3 is chosen so that the height of the lower layer 7 corresponds to the height of a portion of the final double spiral 21.
  • the upper layer 5 is used as spacing means with respect to the lower layer 7. Consequently, the height of the upper layer 5 will be adapted according to the configuration of the double spiral 21. According to said configuration, the thickness of the upper layer 5 can oscillate, for example, between 10 and 200 microns.
  • cavities 8 and 10 are selectively etched, for example by a deep reactive ion etching process (also known as DRIE), in the upper layer 5 of silicon-based material.
  • DRIE deep reactive ion etching process
  • these cavities 8 and 10 make it possible to form a pattern 9 defining the inner and outer contours of a portion of the ferrule made of silicon material of the double spiral.
  • the pattern 9 forms the middle part of the ferrule 27 of the double spiral 21.
  • the pattern 9 is substantially circular cylinder-shaped, however, advantageously according to the method 1, the etching on the upper layer 5 leaves no freedom as to the geometry of the pattern 9.
  • it may not necessarily be circular but, for example, elliptical and / or comprise a non-circular inner diameter.
  • a third step 102 an additional layer 11 of silicon-based material is added to the substrate 3.
  • the additional layer 11 is fixed on the upper layer 5 by means of fusion welding of the silicon-based material (also known as acronym SFB). So, step 102 advantageously allows to cover the upper layer 5 by bonding with a very strong adhesion including the upper face of the pattern 9 on the underside of the additional layer 11.
  • the additional layer 11 may, for example, have a thickness similar to that of the lower layer 7.
  • cavities 12 and 14 are selectively etched, for example, by a method of the DRIE type similar to that of step 101, in the additional silicon layer 11. These cavities 12 and 14 make it possible to form two patterns 13 and 15 defining the inner and outer contours of silicon parts of the double spiral 21.
  • the pattern 13 is substantially circular cylinder shaped and the pattern 15 substantially spiral.
  • the etching on the additional layer 11 leaves complete freedom on the geometry of the patterns 13 and 15.
  • the pattern 15 may, for example, have more turns or an open external curve.
  • the pattern 13 made in the additional layer 11 is of similar shape and substantially perpendicular to the pattern 9 made in the upper layer 5.
  • the cavities 10 and 12 respectively forming the inside diameter of the patterns 9 and 13 communicate together and are substantially one above the other.
  • the patterns 13 and 9 respectively form the upper and middle parts of the ferrule 27 of the double spiral 21.
  • At least one material bridge 16 is made in order to maintain the substrate 3 double spiral 21 during its manufacture.
  • a material bridge 16 is left between the outer curve of the pattern 15 and the remainder of the unetched layer 11.
  • the patterns 13 and 15 being etched at the same time, they therefore form a one-piece part in the additional layer 11.
  • the patterns 13 and 15 respectively form the upper part of the ferrule 27 and the first spiral spring 23 of the double spiral 21.
  • the patterns 13 and 15 etched in the additional layer 11 are connected from below the pattern 13, with a very strong adhesion, above the etched pattern 9 of the upper layer 5. and laterally by the outer curve of the pattern 15 to the additional layer 11.
  • the method 1 may comprise a fifth step 104 of oxidizing at least the pattern 15, that is to say the first spiral spring 23 of the double spiral in order to make it more mechanically resistant and to adjust its thermal coefficient. elastic.
  • a fifth step 104 of oxidizing at least the pattern 15, that is to say the first spiral spring 23 of the double spiral in order to make it more mechanically resistant and to adjust its thermal coefficient. elastic.
  • Such an oxidation step is explained in particular in the patent EP 1 422 436 .
  • the method 1 can comprise three embodiments A, B and C as illustrated in FIG. figure 9 .
  • each of the three embodiments A, B and C ends with the same final step 106 of releasing the double spiral 21 manufactured from the substrate 3.
  • the release step 106 can be simply performed by providing a double spiral force 21 capable of breaking its material bridges 16.
  • This effort can, for example, be generated manually by an operator or by machining.
  • cavities 18 and 20 are selectively etched, for example, by a method of the DRIE type similar to that of steps 101 and 103, in the lower layer 7 made of silicon. These cavities 18 and 20 make it possible to form two patterns 17 and 19 defining the inner and outer contours of silicon parts of the double spiral 21.
  • the pattern 17 is substantially circular cylinder shaped and the pattern 19 substantially spiral.
  • the etching in the lower layer 7 leaves complete freedom on the geometry of the patterns 17 and 19.
  • the pattern 19 may, for example, have more turns or an open external curve.
  • the pattern 17 made in the lower layer 7 is of similar shape and substantially perpendicular to the pattern 9 made in the upper layer 5.
  • the cavities 18, 10 and 12 respectively forming the inner diameters of the patterns 17, 9 and 13 communicate together and are substantially one above the other.
  • the patterns 13, 9 and 17 form the ferrule 27 in one piece of the double spiral 21.
  • At least a second material bridge 16 is made in order to maintain the substrate 3 double spiral 21 during its manufacture.
  • a material bridge 16 is left between the outer curve of the pattern 19 and the remainder of the unetched layer 7.
  • the patterns 17 and 19 being etched at the same time, they therefore form a single piece in the lower layer 7.
  • the patterns 17 and 19 respectively form the lower part of the ferrule 27 and the second spiral spring 25 of the double spiral 21.
  • a double monoblock spiral 21 integrally formed of silicon-based materials is obtained, as can be seen in FIGS. Figures 10 and 11 . It is therefore understood that there is no longer any problem of assembly because it is directly carried out during the manufacture of the double hairspring 21.
  • the latter comprises a first hairspring 23, a second hairspring 25 which are coaxially connected to the hairspring. one with respect to the other with a single ferrule 27.
  • the ferrule 27 is formed by the three successive patterns 13, 9 and 17 by etching in the respective successive layers 11, 5 and 7. It is thus clear that the median pattern 9 is useful as a spacing means between the first spiral spring 23 and the second spiral spring 25 but also as guiding means of said spiral springs.
  • the thickness of the upper layer 5 it is thus possible, by choosing the thickness of the upper layer 5, to directly define the spacing between the two spiral springs 23 and 25 and the quality of their guidance.
  • the heights of the spiral springs 23, 25 and, incidentally, the upper 13 and lower 17 of the ferrule 27, which are not necessarily equal, can be directly defined by choosing the thicknesses of the additional layers 11 and lower 7.
  • each spiral spring 23 and 25 may comprise its own number. of turns, its own geometrical characteristics close to the shell 27, its own winding direction of the turns but also its own curve geometry in particular at its external part.
  • one and / or the other of the spiral springs 23, 25 may thus comprise an open external curve in order to cooperate with a racking system or comprise, on the end of the external curve, a bead adapted to serve as a fixed attachment point.
  • the ferrule 27 may also comprise dimensions and / or geometries that are uniformly clean or different on at least one of the lower 17, median 9 and / or high 13 portions.
  • the inner diameter may have a complementary shape on all or part of the height of the shell 27.
  • the inner and / or outer diameters are not necessarily circular but, for example, elliptical and / or or polygonal.
  • spiral springs 23 and 25 have the same height, that is to say are etched in layers 7 and 11 of the same thickness and have the same number of turns. They have their outer curve ends which are angularly offset relative to the ferrule by substantially 180 °. Finally, the winding directions of the turns of the spiral springs 23 and 25 are opposite.
  • the shell 27 is uniform over its entire height and is substantially in the form of a cylinder with a circular section.
  • each spiral spring 23, 25 could be plumb one of the other which would advantageously, the use of a single pitcher means for the two spiral springs 23 and 25.
  • the very good structural accuracy of a deep reactive ion etching makes it possible to reduce the starting radius of each of the spiral springs 23 and 25, ie the outside diameter of the ferrule 27. which allows the miniaturization of the inner and outer diameters of the ferrule 27. It is therefore understood that the double spiral 21 is adapted to receive by its cavities 18, 10 and 12, advantageously, an axis of smaller diameter than is currently manufactured.
  • said axis may be fixed on the inner diameter 18 and / or 10 and / or 12 of the ferrule 27.
  • the clamping may for example be carried out using elastic means etched in the shell 27 of silicon.
  • Such elastic means may, for example, take the form of those disclosed in the Figures 10A to 10E patent EP 1 655 642 or those disclosed in the Figures 1, 3 and 5 patent EP 1 584 994 .
  • the method 1 comprises, after the step 103 or 104, a sixth step 107, as visible in FIG. figure 6 , consisting in implementing a process of the LIGA type (a well-known acronym derived from German "röntgenLithographie, Galvanoformung &Abformung").
  • LIGA a well-known acronym derived from German "röntgenLithographie, Galvanoformung &Abformung”
  • Such a process comprises a succession of steps making it possible to electrodeposit in a particular form a metal on the lower layer 7 of the substrate 3 with the aid of a photostructured resin.
  • the deposited metal may be, for example, gold or nickel or one of their alloys.
  • step 107 may consist in depositing a cylinder 29.
  • the cylinder 29 is intended to receive, advantageously, by driving an axis.
  • a disadvantage of silicon lies in its very weak elastic and plastic zones which makes it very brittle.
  • the invention therefore proposes to perform the clamping of an axis, for example, balance not against the silicon of the sleeve 27 but on the inner diameter 28 of the metal cylinder 29 electrodeposited during step 107.
  • the cylinder 29 obtained by electroplating leaves full freedom as to its geometry.
  • the inside diameter 28 is not necessarily circular but, for example, example, polygonal which could improve the transmission of effort in rotation with a corresponding shape axis.
  • a seventh step 108 similar to the step 105 visible at the figure 5 cavities are selectively etched, for example, by a method of the DRIE type, in the lower layer 7 of silicon-based material. These cavities make it possible to form patterns of a second spiral spring and a ferrule similar to the patterns 19 and 17 of the first embodiment A.
  • a double monobloc spiral formed of silicon-based materials with the same advantages as the embodiment A with, in addition, a part 29 of metal. It is therefore understood that there is no problem of assembly because it is directly made during the manufacture of the double spiral.
  • an axis can be driven against the inside diameter 28 of the metal part 29. It is thus possible, preferentially, that the cavities 10 and 12 have sections of larger dimensions than the inside diameter 28 of the metal part. 29 to prevent the axis is in bold contact with the ferrule 27.
  • the method 1 comprises, after the step 103 or 104, in a sixth step 109, as visible at the figure 7 , selectively etching a cavity 30, for example, by a DRIE-type method, to a limited depth in the lower layer 7 of silicon-based material.
  • the cavity 30 makes it possible to form a recess able to serve as a container for a metal part.
  • the cavity 30 obtained may take the form of a disc.
  • the etching on the lower layer 7 leaves all freedom on the geometry of the cavity 30.
  • the method 1 comprises the implementation of a growth-type process galvanic or LIGA type to fill the cavity 30 in a particular metal form.
  • the deposited metal may be, for example, gold or nickel.
  • step 110 may consist in depositing a cylinder 31 in the cavity 30.
  • the cylinder 31 is intended to receive, advantageously, by driving an axis.
  • an advantageous characteristic according to the invention therefore consists in making the clamping of the axis, for example, balance not against the silicon-based material of the shell 27 but on the diameter inside 32 of the metal cylinder 31 electrodeposited during step 110.
  • the cylinder 31 obtained by electroplating leaves full freedom as to its geometry.
  • the inner diameter 32 is not necessarily circular but, for example, polygonal which could improve the transmission of force in rotation with a corresponding shape of the axis.
  • the method 1 may include, in an eighth step 111, polishing the metal deposit 31 made in step 110 to make it plane.
  • a ninth step 112 similar to the step 105 visible at the figure 5 cavities are selectively etched, for example, by a method of the DRIE type, in the lower layer 7 of silicon-based material. These cavities make it possible to form patterns of a second spiral spring and a ferrule similar to the patterns 19 and 17 of the first embodiment A.
  • final double spiral 21 is thus assembled before being structured, that is to say before being etched and / or modified by electroplating.
  • This advantageously makes it possible to minimize the dispersions generated by current assemblies of two spirals and, consequently, improves the accuracy of a regulator member improves the accuracy of a regulator member of which it would be dependent.
  • a metal deposits type of firing insert 29 and / or 31 also or only from the additional layers 11 and / or upper 5.
  • the two spiral springs 23 and 25 are oxidized to make them more mechanically resistant and to adjust their thermoelastic coefficient.
  • a conductive layer is deposited on at least a portion of the double spiral 21 in order to avoid problems of isochronism. Such a layer may be of the type disclosed in the document EP 1 837 722 .
  • a polishing step of the type of step 111 can also be carried out between step 107 and step 108 as visible in dashed lines at the figure 9 .

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Abstract

The spiral (21) has a collet (27) formed by patterns. One of the patterns is projected from a hairspring (23) and formed in a silicon based layer. The hairspring is coaxially mounted on the collet. Another pattern is extended into another silicon based layer so as to be coaxial with another hairspring (25) for forming the monoblock double spiral in silicon based material. The hairspring (23) made of silicon based material is oxidized. An internal spire of one of the hairsprings is provided with a Grossmann curve. An independent claim is also included for a method for fabricating a double spiral.

Description

DOMAINE DE L'INVENTIONFIELD OF THE INVENTION

L'invention se rapporte à un double spiral et son procédé de fabrication et, plus particulièrement, à un double spiral formé en une seule pièce.The invention relates to a double spiral and its method of manufacture and, more particularly, to a double spiral formed in one piece.

ARRIERE PLAN DE L'INVENTIONBACKGROUND OF THE INVENTION

L'organe régulateur d'une pièce d'horlogerie comporte généralement un volant d'inertie appelé balancier et un résonateur appelé spiral. Ces pièces sont déterminantes pour la qualité de marche de la pièce d'horlogerie. En effet, elles régulent le mouvement, c'est-à-dire qu'elles contrôlent la fréquence du mouvement.The regulating member of a timepiece generally comprises an inertia flywheel called a balance wheel and a resonator called a spiral. These pieces are decisive for the running quality of the timepiece. Indeed, they regulate the movement, that is to say they control the frequency of the movement.

Dans le cas d'un spiral double, des matériaux ont bien été testés notamment afin de limiter l'influence d'un changement de température sur l'organe régulateur dans lequel il est intégré sans que les difficultés d'assemblage ou de mise au point en résonance ne disparaissent.In the case of a double spiral, materials have been tested in particular to limit the influence of a temperature change on the regulator member in which it is integrated without the difficulties of assembly or development in resonance do not disappear.

Le document FR 2 447 571 divulgue un balancier couplé avec deux ressort-spiraux monté en série afin de maintenir un centre de gravité sur l'axe de balancier.The document FR 2,447,571 discloses a pendulum coupled with two coil springs mounted in series to maintain a center of gravity on the balance shaft.

Le document EP 0 732 635 divulgue la fabrication d'une pièce de micromécanique fabriquée à partir d'une plaque de silicium monocristallin puis recouverte d'une couche d'un matériau de dureté et de coefficient de frottement améliorés.The document EP 0 732 635 discloses the manufacture of a micromechanical component manufactured from a monocrystalline silicon plate and then covered with a layer of a material of improved hardness and coefficient of friction.

RESUME DE L'INVENTIONSUMMARY OF THE INVENTION

Le but de la présente invention est de pallier tout ou partie les inconvénients cités précédemment en proposant un spiral double monobloc dont le coefficient thermo-élastique peut être ajusté et qui est obtenu à l'aide d'un procédé de fabrication qui minimise les difficultés d'assemblage.The object of the present invention is to overcome all or part of the disadvantages mentioned above by proposing a double monoblock spiral whose thermo-elastic coefficient can be adjusted and which is obtained by means of a manufacturing process which minimizes assembly difficulties.

A cet effet, l'invention se rapporte à un spiral double selon la revendication 1.For this purpose, the invention relates to a double spiral according to claim 1.

Conformément à d'autres caractéristiques avantageuses de l'invention :

  • la virole comporte sensiblement la même section dans chacune desdites couches afin de faciliter la mise au point dudit spiral double ;
  • la virole comporte sensiblement une section différente sur au moins une des couches ;
  • les ressorts-spiraux comportent des spires s'enroulant selon le même sens ou pas ;
  • les extrémités des courbes externes de chacun des ressorts-spiraux sont à l'aplomb l'une par rapport à l'autre afin d'autoriser l'utilisation d'un moyen de pitonnage unique dudit spiral double ;
  • les ressorts-spiraux comportent une même raideur angulaire ou pas ;
  • au moins un des ressorrs-spiraux comporte au moins une partie en dioxyde de silicium afin de le rendre plus résistant mécaniquement et d'ajuster son coefficient thermo-élastique
  • la spire interne d'au moins un des ressorts-spiraux comporte une courbe du type Grossmann afin d'améliorer la concentricité du développement dudit spiral
  • la virole comporte une partie en métal destinée à recevoir par chassage un axe.
According to other advantageous features of the invention:
  • the ferrule has substantially the same section in each of said layers to facilitate the development of said double spiral;
  • the ferrule comprises substantially a different section on at least one of the layers;
  • the spiral springs have turns winding in the same direction or not;
  • the ends of the outer curves of each of the spiral springs are plumb with each other in order to allow the use of a single pitcher means of said double spiral;
  • the spiral springs have the same angular stiffness or not;
  • at least one of the spiral springs has at least one portion of silicon dioxide in order to make it mechanically stronger and to adjust its thermo-elastic coefficient
  • the internal coil of at least one of the spiral springs comprises a Grossmann-type curve in order to improve the concentricity of the development of said spiral
  • the ferrule comprises a metal part intended to receive by driving an axis.

Plus généralement, l'invention se rapporte à une pièce d'horlogerie caractérisée en ce qu'elle comporte un spiral double selon l'une des variantes précédentes.More generally, the invention relates to a timepiece characterized in that it comprises a double spiral according to one of the preceding variants.

Enfin l'invention se rapporte à un procédé de fabrication d'un spiral double selon la revendication 13.Finally, the invention relates to a method of manufacturing a double spiral according to claim 13.

Conformément à d'autres caractéristiques avantageuses de l'invention :

  • après l'étape d), il comporte l'étape g) : oxyder le premier ressort-spiral en matériau à base de silicium afin de le rendre plus résistant mécaniquement et d'ajuster son coefficient thermo-élastique ;
  • après l'étape e), il comporte l'étape g') : oxyder le deuxième ressort-spiral en matériau à base de silicium afin de le rendre plus résistant mécaniquement et d'ajuster son coefficient thermo-élastique ;
  • avant l'étape e), il comporte l'étape h) : déposer sélectivement au moins une couche de métal sur la couche inférieure pour définir le motif d'une partie métallique sur la virole ;
  • l'étape h) comporte la phase i) : faire croître ledit dépôt par couches successives métalliques au moins partiellement sur la surface de la couche inférieure afin de former la partie métallique destinée à recevoir par chassage un axe ;
  • l'étape h) comporte les phases j) : graver sélectivement au moins une cavité dans la couche inférieure destinée à recevoir la partie métallique et k) : faire croître ledit dépôt par couches successives métalliques au moins partiellement dans ladite au moins une cavité afin de former la partie métallique destinée à recevoir par chassage un axe ;
  • l'étape h) comporte une dernière étape l) : polir le dépôt métallique ;
  • plusieurs spiraux doubles sont réalisés sur un même substrat ce qui permet la fabrication en série.
According to other advantageous features of the invention:
  • after step d), it comprises step g): oxidizing the first spiral spring made of silicon-based material in order to make it more mechanically strong and to adjust its thermo-elastic coefficient;
  • after step e), it comprises step g '): oxidizing the second spiral spring made of silicon-based material in order to make it more mechanically strong and to adjust its thermo-elastic coefficient;
  • before step e), it comprises step h): selectively depositing at least one layer of metal on the lower layer to define the pattern of a metal part on the ferrule;
  • step h) comprises phase i): growing said deposit in successive metal layers at least partially on the surface of the lower layer to form the metal part intended to receive a shaft by driving;
  • step h) comprises the phases j): selectively etching at least one cavity in the lower layer intended to receive the metal part and k): growing said deposition by successive metal layers at least partially in said at least one cavity in order to forming the metal part intended to receive by driving an axis;
  • step h) comprises a last step 1): polishing the metal deposit;
  • several double spirals are made on the same substrate which allows mass production.

DESCRIPTION SOMMAIRE DES DESSINSSUMMARY DESCRIPTION OF THE DRAWINGS

D'autres particularités et avantages ressortiront clairement de la description qui en est faite ci-après, à titre indicatif et nullement limitatif, en référence aux dessins annexés, dans lesquels :

  • les figures 1 à 5 représentent des vues successives du procédé de fabrication selon l'invention ;
  • les figures 6 à 8 représentent des vues des étapes successives de modes de réalisation alternatifs ;
  • la figure 9 représente un schéma fonctionnel du procédé selon l'invention ;
  • les figures 10 et 11 sont des représentations en perspective d'un spiral double monobloc selon un premier mode de réalisation.
Other particularities and advantages will emerge clearly from the description which is given hereinafter, by way of indication and in no way limiting, with reference to the appended drawings, in which:
  • the Figures 1 to 5 represent successive views of the manufacturing method according to the invention;
  • the Figures 6 to 8 represent views of the successive steps of alternative embodiments;
  • the figure 9 represents a block diagram of the process according to the invention;
  • the Figures 10 and 11 are perspective representations of a double monoblock spiral according to a first embodiment.

DESCRIPTION DETAILLEE DES MODES DE REALISATION PREFERESDETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

L'invention se rapporte à un procédé généralement annoté 1 destiné à fabriquer un spiral double 21 pour un mouvement de pièce d'horlogerie. Comme illustré aux figures 1 à 9, le procédé 1 comporte des étapes successives destinées à former au moins un type de spiral double monobloc qui peut être formé intégralement en matériaux à base de silicium.The invention relates to a generally annotated method 1 for manufacturing a double spiral 21 for a timepiece movement. As illustrated in Figures 1 to 9 , Process 1 comprises successive steps intended to form at least one type of double monobloc spiral which can be integrally formed of silicon-based materials.

En référence aux figures 1 et 9, la première étape 100 consiste à se munir d'un substrat 3 du type silicium sur isolant (également connu sous l'acronyme anglais SOI). Le substrat 3 comporte une couche supérieure 5 et une couche inférieure 7 composées chacune de matériau à base de silicium.With reference to figures 1 and 9 , the first step 100 is to provide a substrate 3 of the silicon-on-insulator type (also known as the acronym English SOI). The substrate 3 comprises an upper layer 5 and a lower layer 7 each composed of silicon-based material.

Préférentiellement dans cette étape 100, le substrat 3 est choisi afin que la hauteur de la couche inférieure 7 corresponde à la hauteur d'une partie du spiral double final 21.Preferentially in this step 100, the substrate 3 is chosen so that the height of the lower layer 7 corresponds to the height of a portion of the final double spiral 21.

Préférentiellement, la couche supérieure 5 est utilisée comme moyen d'espacement par rapport à la couche inférieure 7. Par conséquent, la hauteur de la couche supérieure 5 sera adaptée en fonction de la configuration du spiral double 21. Selon ladite configuration, l'épaisseur de la couche supérieure 5 peut ainsi osciller, par exemple, entre 10 et 200 µm.Preferably, the upper layer 5 is used as spacing means with respect to the lower layer 7. Consequently, the height of the upper layer 5 will be adapted according to the configuration of the double spiral 21. According to said configuration, the thickness of the upper layer 5 can oscillate, for example, between 10 and 200 microns.

Dans une deuxième étape 101, comme visible à la figure 2, des cavités 8 et 10 sont sélectivement gravées, par exemple par un procédé de gravure ionique réactive profonde (également connu sous l'acronyme anglais DRIE), dans la couche supérieure 5 en matériau à base de silicium. Préférentiellement, ces cavités 8 et 10 permettent de former un motif 9 définissant les contours intérieur et extérieur d'une partie de la virole en matériau à base de silicium du spiral double.In a second step 101, as visible in the figure 2 cavities 8 and 10 are selectively etched, for example by a deep reactive ion etching process (also known as DRIE), in the upper layer 5 of silicon-based material. Preferably, these cavities 8 and 10 make it possible to form a pattern 9 defining the inner and outer contours of a portion of the ferrule made of silicon material of the double spiral.

Dans l'exemple illustré aux figures 10 et 11, le motif 9 forme la partie médiane de la virole 27 du spiral double 21. Comme illustré à la figure 2, le motif 9 est sensiblement en forme de cylindre à section circulaire, cependant, avantageusement selon le procédé 1, la gravure sur la couche supérieure 5 laisse toute liberté quant à la géométrie du motif 9. Ainsi, notamment, il pourrait ne pas forcément être circulaire mais, par exemple, elliptique et/ou comporter un diamètre intérieur non circulaire.In the example shown in Figures 10 and 11 , the pattern 9 forms the middle part of the ferrule 27 of the double spiral 21. As illustrated in FIG. figure 2 , the pattern 9 is substantially circular cylinder-shaped, however, advantageously according to the method 1, the etching on the upper layer 5 leaves no freedom as to the geometry of the pattern 9. Thus, in particular, it may not necessarily be circular but, for example, elliptical and / or comprise a non-circular inner diameter.

Dans une troisième étape 102, comme visible à la figure 3, une couche supplémentaire 11 en matériau à base de silicium est ajoutée au substrat 3. Préférentiellement, la couche supplémentaire 11 est fixée sur la couche supérieure 5 au moyen d'un soudage par fusion du matériau à base de silicium (également connu sous l'acronyme anglais SFB). Ainsi, l'étape 102 permet avantageusement de recouvrir la couche supérieure 5 en liant avec une très forte adhérence notamment la face supérieure du motif 9 sur la face inférieure de la couche supplémentaire 11. La couche supplémentaire 11 peut, par exemple, comporter une épaisseur similaire à celle de la couche inférieure 7.In a third step 102, as visible in figure 3 , an additional layer 11 of silicon-based material is added to the substrate 3. Preferably, the additional layer 11 is fixed on the upper layer 5 by means of fusion welding of the silicon-based material (also known as acronym SFB). So, step 102 advantageously allows to cover the upper layer 5 by bonding with a very strong adhesion including the upper face of the pattern 9 on the underside of the additional layer 11. The additional layer 11 may, for example, have a thickness similar to that of the lower layer 7.

Dans une quatrième étape 103, comme visible à la figure 4, des cavités 12 et 14 sont sélectivement gravées, par exemple, par un procédé du type DRIE semblable à celui de l'étape 101, dans la couche supplémentaire 11 en silicium. Ces cavités 12 et 14 permettent de former deux motifs 13 et 15 définissants les contours intérieur et extérieur de parties en silicium du spiral double 21.In a fourth step 103, as visible in figure 4 cavities 12 and 14 are selectively etched, for example, by a method of the DRIE type similar to that of step 101, in the additional silicon layer 11. These cavities 12 and 14 make it possible to form two patterns 13 and 15 defining the inner and outer contours of silicon parts of the double spiral 21.

Dans l'exemple illustré à la figure 4, le motif 13 est sensiblement en forme de cylindre à section circulaire et, le motif 15, sensiblement en forme de spirale. Cependant, avantageusement selon le procédé 1, la gravure sur la couche supplémentaire 11 laisse toute liberté sur la géométrie des motifs 13 et 15. Ainsi, notamment, le motif 15 peut, par exemple, comporter plus de spires ou une courbe externe ouverte.In the example shown in figure 4 , the pattern 13 is substantially circular cylinder shaped and the pattern 15 substantially spiral. However, advantageously according to the method 1, the etching on the additional layer 11 leaves complete freedom on the geometry of the patterns 13 and 15. Thus, in particular, the pattern 15 may, for example, have more turns or an open external curve.

Préférentiellement, le motif 13 réalisé dans la couche supplémentaire 11 est de forme similaire et sensiblement à l'aplomb du motif 9 réalisé dans la couche supérieure 5. Cela signifie que les cavités 10 et 12 formant respectivement le diamètre intérieur des motifs 9 et 13 communiquent ensemble et sont sensiblement l'une au-dessus de l'autre. Dans l'exemple illustré aux figures 10 et 11, les motifs 13 et 9 forment respectivement les parties haute et médiane de la virole 27 du spiral double 21.Preferably, the pattern 13 made in the additional layer 11 is of similar shape and substantially perpendicular to the pattern 9 made in the upper layer 5. This means that the cavities 10 and 12 respectively forming the inside diameter of the patterns 9 and 13 communicate together and are substantially one above the other. In the example shown in Figures 10 and 11 , the patterns 13 and 9 respectively form the upper and middle parts of the ferrule 27 of the double spiral 21.

De manière préférée, au moins un pont de matière 16 est réalisé afin de maintenir au substrat 3 le spiral double 21 lors de sa fabrication. Dans l'exemple illustré à la figure 4, on peut voir qu'un pont de matière 16 est laissé entre la courbe externe du motif 15 et le reste de la couche 11 non gravée.Preferably, at least one material bridge 16 is made in order to maintain the substrate 3 double spiral 21 during its manufacture. In the example shown in figure 4 it can be seen that a material bridge 16 is left between the outer curve of the pattern 15 and the remainder of the unetched layer 11.

Avantageusement, les motifs 13 et 15 étant gravés en même temps, ils forment donc une pièce monobloc dans la couche supplémentaire 11. Dans l'exemple illustré aux figures 10 et 11, les motifs 13 et 15 forment respectivement la partie haute de la virole 27 et le premier ressort-spiral 23 du spiral double 21.Advantageously, the patterns 13 and 15 being etched at the same time, they therefore form a one-piece part in the additional layer 11. In the example illustrated in FIGS. Figures 10 and 11 , the patterns 13 and 15 respectively form the upper part of the ferrule 27 and the first spiral spring 23 of the double spiral 21.

A la suite de cette quatrième étape 103, on comprend que les motifs 13 et 15 gravés dans la couche supplémentaire 11 sont reliés par le dessous du motif 13, avec une très forte adhérence, au-dessus du motif 9 gravé de la couche supérieure 5 et latéralement par la courbe externe du motif 15 à la couche supplémentaire 11.Following this fourth step 103, it is understood that the patterns 13 and 15 etched in the additional layer 11 are connected from below the pattern 13, with a very strong adhesion, above the etched pattern 9 of the upper layer 5. and laterally by the outer curve of the pattern 15 to the additional layer 11.

Préférentiellement comme représenté en traits interrompus à la figure 9, le procédé 1 peut comporter une cinquième étape 104 consistant à oxyder au moins le motif 15, c'est-à-dire le premier ressort-spiral 23 du spiral double afin de le rendre plus résistant mécaniquement et d'ajuster son coefficient thermo-élastique. Une telle étape d'oxydation est expliquée notamment dans le brevet EP 1 422 436 .Preferably as shown in dashed lines at the figure 9 , the method 1 may comprise a fifth step 104 of oxidizing at least the pattern 15, that is to say the first spiral spring 23 of the double spiral in order to make it more mechanically resistant and to adjust its thermal coefficient. elastic. Such an oxidation step is explained in particular in the patent EP 1 422 436 .

Avantageusement selon l'invention, après la quatrième étape 103 ou préférentiellement après la cinquième étape 104, le procédé 1 peut comporter trois modes de réalisations A, B et C comme illustré à la figure 9. Cependant, chacun des trois modes de réalisation A, B et C se termine par la même étape finale 106 consistant à libérer du substrat 3 le spiral double 21 fabriqué.Advantageously according to the invention, after the fourth step 103 or preferentially after the fifth step 104, the method 1 can comprise three embodiments A, B and C as illustrated in FIG. figure 9 . However, each of the three embodiments A, B and C ends with the same final step 106 of releasing the double spiral 21 manufactured from the substrate 3.

Avantageusement, l'étape 106 de libération peut être simplement réalisée en fournissant un effort au spiral double 21 apte à casser ses ponts de matière 16. Cet effort peut, par exemple, être généré manuellement par un opérateur ou par usinage.Advantageously, the release step 106 can be simply performed by providing a double spiral force 21 capable of breaking its material bridges 16. This effort can, for example, be generated manually by an operator or by machining.

Selon un premier mode de réalisation A, dans une sixième étape 105, comme visible à la figure 5, des cavités 18 et 20 sont sélectivement gravées, par exemple, par un procédé du type DRIE semblable à celui des étapes 101 et 103, dans la couche inférieure 7 en matériau à base de silicium. Ces cavités 18 et 20 permettent de former deux motifs 17 et 19 définissants les contours intérieur et extérieur de parties en silicium du spiral double 21.According to a first embodiment A, in a sixth step 105, as visible in FIG. figure 5 cavities 18 and 20 are selectively etched, for example, by a method of the DRIE type similar to that of steps 101 and 103, in the lower layer 7 made of silicon. These cavities 18 and 20 make it possible to form two patterns 17 and 19 defining the inner and outer contours of silicon parts of the double spiral 21.

Dans l'exemple illustré à la figure 5, le motif 17 est sensiblement en forme de cylindre à section circulaire et, le motif 19, sensiblement en forme de spirale. Cependant, avantageusement selon le procédé 1, la gravure dans la couche inférieure 7 laisse toute liberté sur la géométrie des motifs 17 et 19. Ainsi, notamment, le motif 19 peut, par exemple, comporter plus de spires ou une courbe externe ouverte.In the example shown in figure 5 , the pattern 17 is substantially circular cylinder shaped and the pattern 19 substantially spiral. However, advantageously according to the method 1, the etching in the lower layer 7 leaves complete freedom on the geometry of the patterns 17 and 19. Thus, in particular, the pattern 19 may, for example, have more turns or an open external curve.

Préférentiellement, le motif 17 réalisé dans la couche inférieure 7 est de forme similaire et sensiblement à l'aplomb du motif 9 réalisé dans la couche supérieure 5. Cela signifie que les cavités 18, 10 et 12 formant respectivement les diamètres intérieurs des motifs 17, 9 et 13 communiquent ensemble et sont sensiblement les unes au-dessus des autres. Dans l'exemple illustré aux figures 10 et 11, les motifs 13, 9 et 17 forment la virole 27 monobloc du spiral double 21.Preferably, the pattern 17 made in the lower layer 7 is of similar shape and substantially perpendicular to the pattern 9 made in the upper layer 5. This means that the cavities 18, 10 and 12 respectively forming the inner diameters of the patterns 17, 9 and 13 communicate together and are substantially one above the other. In the example shown in Figures 10 and 11 , the patterns 13, 9 and 17 form the ferrule 27 in one piece of the double spiral 21.

De manière préférée, au moins un deuxième pont de matière 16 est réalisé afin de maintenir au substrat 3 le spiral double 21 lors de sa fabrication. Dans l'exemple illustré à la figure 5, on peut voir qu'un pont de matières 16 est laissé entre la courbe externe du motif 19 et le reste de la couche 7 non gravée.Preferably, at least a second material bridge 16 is made in order to maintain the substrate 3 double spiral 21 during its manufacture. In the example shown in figure 5 it can be seen that a material bridge 16 is left between the outer curve of the pattern 19 and the remainder of the unetched layer 7.

Avantageusement, les motifs 17 et 19 étant gravés en même temps, ils forment donc une pièce monobloc dans la couche inférieure 7. Dans l'exemple illustré aux figures 10 et 11, les motifs 17 et 19 forment respectivement la partie basse de la virole 27 et le deuxième ressort-spiral 25 du spiral double 21.Advantageously, the patterns 17 and 19 being etched at the same time, they therefore form a single piece in the lower layer 7. In the example illustrated in FIGS. Figures 10 and 11 the patterns 17 and 19 respectively form the lower part of the ferrule 27 and the second spiral spring 25 of the double spiral 21.

A la suite de cette sixième étape 105, on comprend que les motifs 17 et 19 gravés dans la couche inférieure 7 sont reliés par le dessus du motif 17, avec une très forte adhérence, au-dessous du motif 9 gravé de la couche supérieure 5 et latéralement par la courbe externe du motif 19 à la couche inférieure 7.As a result of this sixth step 105, it is understood that the patterns 17 and 19 etched in the lower layer 7 are connected by the top of the pattern 17, with a very strong adhesion, below the engraved pattern 9 of the upper layer 5 and laterally by the outer curve of the pattern 19 to the lower layer 7.

A la suite de l'étape finale 106 expliquée ci-dessus, on obtient donc, à l'aide du premier mode de réalisation A, un spiral double 21 monobloc formé intégralement en matériaux à base de silicium comme visible aux figures 10 et 11. On comprend donc qu'il n'y a plus de problème d'assemblage car il est directement réalisé pendant la fabrication du spiral double 21. Ce dernier comprend un premier ressort-spiral 23, un deuxième ressort-spiral 25 qui sont raccordés coaxialement l'un par rapport à l'autre avec une virole unique 27.As a result of the final step 106 explained above, therefore, with the aid of the first embodiment A, a double monoblock spiral 21 integrally formed of silicon-based materials is obtained, as can be seen in FIGS. Figures 10 and 11 . It is therefore understood that there is no longer any problem of assembly because it is directly carried out during the manufacture of the double hairspring 21. The latter comprises a first hairspring 23, a second hairspring 25 which are coaxially connected to the hairspring. one with respect to the other with a single ferrule 27.

Comme expliqué ci-dessus, la virole 27 est formée par les trois motifs successifs 13, 9 et 17 par gravage dans les couches successives respectives 11, 5 et 7. On comprend donc que le motif médian 9 est utile comme moyen d'espacement entre le premier ressort-spiral 23 et le deuxième ressort-spiral 25 mais également comme moyen de guidage desdits ressorts-spiraux. Avantageusement selon le procédé 1, il est ainsi possible, en choisissant l'épaisseur de la couche supérieure 5, de directement définir l'espacement entre les deux ressorts-spiraux 23 et 25 ainsi que la qualité de leur guidage.As explained above, the ferrule 27 is formed by the three successive patterns 13, 9 and 17 by etching in the respective successive layers 11, 5 and 7. It is thus clear that the median pattern 9 is useful as a spacing means between the first spiral spring 23 and the second spiral spring 25 but also as guiding means of said spiral springs. Advantageously according to method 1, it is thus possible, by choosing the thickness of the upper layer 5, to directly define the spacing between the two spiral springs 23 and 25 and the quality of their guidance.

De manière similaire, les hauteurs des ressorts-spiraux 23, 25 et, incidemment celles des parties haute 13 et basse 17 de la virole 27, qui ne sont pas nécessairement égales, peuvent être directement définies en choisissant respectivement les épaisseurs des couches supplémentaire 11 et inférieure 7.Similarly, the heights of the spiral springs 23, 25 and, incidentally, the upper 13 and lower 17 of the ferrule 27, which are not necessarily equal, can be directly defined by choosing the thicknesses of the additional layers 11 and lower 7.

De plus, les gravures réalisées selon les étapes 103 et 105 du procédé 1 laissent toute liberté sur la géométrie des ressort-spiraux 23, 25 et de la virole 27. Ainsi, notamment, chaque ressort-spiral 23 et 25 peut comporter son nombre propre de spires, ses caractéristiques géométriques propres à proximité de la virole 27, son sens propre d'enroulement des spires mais également sa géométrie de courbe propre notamment au niveau de sa partie externe. A titre d'exemple, l'un et/ou l'autre des ressorts-spiraux 23, 25 peut ainsi comporter une courbe externe ouverte afin de coopérer avec un système de raquetterie ou comporter, sur l'extrémité de la courbe externe, un bourrelet apte à servir de point d'attache fixe.In addition, the engravings made according to the steps 103 and 105 of the method 1 leave all freedom on the geometry of the spiral springs 23, 25 and the ferrule 27. Thus, in particular, each spiral spring 23 and 25 may comprise its own number. of turns, its own geometrical characteristics close to the shell 27, its own winding direction of the turns but also its own curve geometry in particular at its external part. By way of example, one and / or the other of the spiral springs 23, 25 may thus comprise an open external curve in order to cooperate with a racking system or comprise, on the end of the external curve, a bead adapted to serve as a fixed attachment point.

Selon le même raisonnement, la virole 27 peut également comporter des dimensions et/ou géométries uniformément propres ou différentes sur au moins une des parties basse 17, médiane 9 et/ou haute 13. En effet, suivant l'axe avec lequel la virole 27 est prévue d'être montée, le diamètre intérieur peut posséder une forme complémentaire sur tout ou partie de la hauteur de la virole 27. De même, les diamètres intérieur et/ou extérieur ne sont pas forcément circulaires mais, par exemple, elliptiques et/ou polygonaux.According to the same reasoning, the ferrule 27 may also comprise dimensions and / or geometries that are uniformly clean or different on at least one of the lower 17, median 9 and / or high 13 portions. In fact, along the axis with which the ferrule 27 is intended to be mounted, the inner diameter may have a complementary shape on all or part of the height of the shell 27. Similarly, the inner and / or outer diameters are not necessarily circular but, for example, elliptical and / or or polygonal.

Dans l'exemple illustré aux figures 10 et 11, les ressors-spiraux 23 et 25 comportent la même hauteur, c'est-à-dire sont gravés dans des couches 7 et 11 de même épaisseur et comportent le même nombre de spires. Ils ont leurs extrémités de courbe externe qui sont décalés angulairement par rapport à la virole de sensiblement 180°. Enfin, les sens d'enroulement des spires des ressorts-spiraux 23 et 25 sont opposés De plus, la virole 27 est uniforme sur toute sa hauteur et est sensiblement en forme de cylindre à section circulaire.In the example shown in Figures 10 and 11 , spiral springs 23 and 25 have the same height, that is to say are etched in layers 7 and 11 of the same thickness and have the same number of turns. They have their outer curve ends which are angularly offset relative to the ferrule by substantially 180 °. Finally, the winding directions of the turns of the spiral springs 23 and 25 are opposite. In addition, the shell 27 is uniform over its entire height and is substantially in the form of a cylinder with a circular section.

Comme expliqué ci-dessus, grâce aux libertés de fabrication autorisées par le procédé 1, il pourrait en être autrement, c'est-à-dire que les extrémités de courbe externe de chaque ressort-spiral 23, 25 pourraient être à l'aplomb l'une de l'autre ce qui permettrait, avantageusement, l'utilisation d'un unique moyen de pitonnage pour les deux ressorts-spiraux 23 et 25.As explained above, thanks to the freedoms of manufacture authorized by method 1, it could be otherwise, that is to say that the outer curve ends of each spiral spring 23, 25 could be plumb one of the other which would advantageously, the use of a single pitcher means for the two spiral springs 23 and 25.

Il faut également noter que la très bonne précision structurelle d'une gravure ionique réactive profonde permet de diminuer le rayon de départ de chacun des ressorts-spiraux 23 et 25, c'est-à-dire le diamètre extérieur de la virole 27, ce qui autorise la miniaturisation des diamètres intérieurs et extérieurs de la virole 27. On comprend donc que le spiral double 21 est apte à recevoir par ses cavités 18, 10 et 12, avantageusement, un axe de diamètre plus petit que ce qui est communément fabriqué actuellement.It should also be noted that the very good structural accuracy of a deep reactive ion etching makes it possible to reduce the starting radius of each of the spiral springs 23 and 25, ie the outside diameter of the ferrule 27. which allows the miniaturization of the inner and outer diameters of the ferrule 27. It is therefore understood that the double spiral 21 is adapted to receive by its cavities 18, 10 and 12, advantageously, an axis of smaller diameter than is currently manufactured.

Préférentiellement, ledit axe peut être fixé sur le diamètre intérieur 18 et/ou 10 et/ou 12 de la virole 27. Le serrage peut par exemple être réalisé à l'aide de moyens élastiques gravés dans la virole 27 en silicium. De tels moyens élastiques peuvent, par exemple, prendre la forme de ceux divulgués dans les figures 10A à 10E du brevet EP 1 655 642 ou ceux divulgués dans les figures 1, 3 et 5 du brevet EP 1 584 994 .Preferably, said axis may be fixed on the inner diameter 18 and / or 10 and / or 12 of the ferrule 27. The clamping may for example be carried out using elastic means etched in the shell 27 of silicon. Such elastic means may, for example, take the form of those disclosed in the Figures 10A to 10E patent EP 1 655 642 or those disclosed in the Figures 1, 3 and 5 patent EP 1 584 994 .

Selon un second mode de réalisation B, le procédé 1 comporte, après l'étape 103 ou 104, une sixième étape 107, comme visible à la figure 6, consistant à mettre en oeuvre un processus du type LIGA (acronyme très connu provenant de l'allemand « röntgenLithographie, Galvanoformung & Abformung »). Un tel processus comporte une succession d'étapes permettant d'électrodéposer selon une forme particulière un métal sur la couche inférieure 7 du substrat 3 à l'aide d'une résine photostructurée. Ce processus du type LIGA étant très connu, il ne sera pas d'avantage détaillé ci-après. Préférentiellement, le métal déposé peut être, par exemple, de l'or ou du nickel ou bien encore un de leurs alliages.According to a second embodiment B, the method 1 comprises, after the step 103 or 104, a sixth step 107, as visible in FIG. figure 6 , consisting in implementing a process of the LIGA type (a well-known acronym derived from German "röntgenLithographie, Galvanoformung &Abformung"). Such a process comprises a succession of steps making it possible to electrodeposit in a particular form a metal on the lower layer 7 of the substrate 3 with the aid of a photostructured resin. As this process of the LIGA type is well known, it will not be more detailed below. Preferably, the deposited metal may be, for example, gold or nickel or one of their alloys.

Dans l'exemple illustré à la figure 6, l'étape 107 peut consister à déposer un cylindre 29. Dans l'exemple illustré à la figure 6, le cylindre 29 est destiné à recevoir, avantageusement, par chassage un axe. En effet, un inconvénient du silicium réside dans ses très faibles zones élastiques et plastique ce qui le rend très cassant. L'invention propose donc de réaliser le serrage d'un axe, par exemple, de balancier non pas contre le silicium de la virole 27 mais sur le diamètre intérieur 28 du cylindre métallique 29 électrodéposé lors de l'étape 107.In the example shown in figure 6 , step 107 may consist in depositing a cylinder 29. In the example illustrated in FIG. figure 6 , the cylinder 29 is intended to receive, advantageously, by driving an axis. Indeed, a disadvantage of silicon lies in its very weak elastic and plastic zones which makes it very brittle. The invention therefore proposes to perform the clamping of an axis, for example, balance not against the silicon of the sleeve 27 but on the inner diameter 28 of the metal cylinder 29 electrodeposited during step 107.

Avantageusement selon le procédé 1, le cylindre 29 obtenu par électrodéposition laisse toute liberté quant à sa géométrie. Ainsi, notamment, le diamètre intérieur 28 n'est pas forcément circulaire mais, par exemple, polygonal ce qui pourrait permettre d'améliorer la transmission d'effort en rotation avec un axe de forme correspondante.Advantageously according to method 1, the cylinder 29 obtained by electroplating leaves full freedom as to its geometry. Thus, in particular, the inside diameter 28 is not necessarily circular but, for example, example, polygonal which could improve the transmission of effort in rotation with a corresponding shape axis.

Dans une septième étape 108, similaire à l'étape 105 visible à la figure 5, des cavités sont sélectivement gravées, par exemple, par un procédé du type DRIE, dans la couche inférieure 7 en matériau à base de silicium. Ces cavités permettent de former des motifs d'un deuxième ressort-spiral et d'une virole semblable aux motifs 19 et 17 du premier mode de réalisation A.In a seventh step 108, similar to the step 105 visible at the figure 5 cavities are selectively etched, for example, by a method of the DRIE type, in the lower layer 7 of silicon-based material. These cavities make it possible to form patterns of a second spiral spring and a ferrule similar to the patterns 19 and 17 of the first embodiment A.

A la suite de l'étape finale 106 expliquée ci-dessus, on obtient donc, à l'aide du second mode de réalisation B, un spiral double monobloc formé en matériaux à base de silicium avec les mêmes avantages que le mode de réalisation A avec, en plus, une partie 29 en métal. On comprend donc qu'il n'y a pas non plus de problème d'assemblage car il est directement réalisé pendant la fabrication du spiral double. Enfin, avantageusement, un axe peut être chassé contre le diamètre intérieur 28 de la partie métallique 29. Il est ainsi envisageable, préférentiellement, que les cavités 10 et 12 comportent des sections de plus grandes dimensions que celle du diamètre intérieur 28 de la partie métallique 29 afin d'éviter que l'axe soit en contact gras avec la virole 27.Following the final step 106 explained above, therefore, using the second embodiment B, a double monobloc spiral formed of silicon-based materials with the same advantages as the embodiment A with, in addition, a part 29 of metal. It is therefore understood that there is no problem of assembly because it is directly made during the manufacture of the double spiral. Finally, advantageously, an axis can be driven against the inside diameter 28 of the metal part 29. It is thus possible, preferentially, that the cavities 10 and 12 have sections of larger dimensions than the inside diameter 28 of the metal part. 29 to prevent the axis is in bold contact with the ferrule 27.

Selon un troisième mode de réalisation C, le procédé 1 comporte, après l'étape 103 ou 104, dans une sixième étape 109, comme visible à la figure 7, consistant à sélectivement graver une cavité 30, par exemple, par un procédé du type DRIE, selon une profondeur limitée dans la couche inférieure 7 en matériau à base de silicium. La cavité 30 permet de former un évidement apte à servir de contenant pour une partie métallique. Comme dans l'exemple illustré à la figure 7, la cavité 30 obtenue peut prendre la forme d'un disque. Cependant, avantageusement selon le procédé 1, la gravure sur la couche inférieure 7 laisse toute liberté sur la géométrie de la cavité 30.According to a third embodiment C, the method 1 comprises, after the step 103 or 104, in a sixth step 109, as visible at the figure 7 , selectively etching a cavity 30, for example, by a DRIE-type method, to a limited depth in the lower layer 7 of silicon-based material. The cavity 30 makes it possible to form a recess able to serve as a container for a metal part. As in the example shown in figure 7 the cavity 30 obtained may take the form of a disc. However, advantageously according to method 1, the etching on the lower layer 7 leaves all freedom on the geometry of the cavity 30.

Dans une septième étape 110, comme illustré à la figure 8, le procédé 1 comporte la mise en oeuvre d'un processus du type croissance galvanique ou du type LIGA permettant de combler la cavité 30 selon une forme métallique particulière. Préférentiellement, le métal déposé peut être, par exemple, de l'or ou du nickel.In a seventh step 110, as illustrated in FIG. figure 8 , the method 1 comprises the implementation of a growth-type process galvanic or LIGA type to fill the cavity 30 in a particular metal form. Preferably, the deposited metal may be, for example, gold or nickel.

Dans l'exemple illustré à la figure 8, l'étape 110 peut consister à déposer un cylindre 31 dans la cavité 30. Le cylindre 31 est destiné à recevoir, avantageusement, par chassage un axe. En effet, comme déjà expliqué ci-dessus, une caractéristique avantageuse selon l'invention consiste donc à réaliser le serrage de l'axe, par exemple, de balancier non pas contre le matériau à base de silicium de la virole 27 mais sur le diamètre intérieur 32 du cylindre métallique 31 électrodéposé lors de l'étape 110.In the example shown in figure 8 , step 110 may consist in depositing a cylinder 31 in the cavity 30. The cylinder 31 is intended to receive, advantageously, by driving an axis. Indeed, as already explained above, an advantageous characteristic according to the invention therefore consists in making the clamping of the axis, for example, balance not against the silicon-based material of the shell 27 but on the diameter inside 32 of the metal cylinder 31 electrodeposited during step 110.

Avantageusement selon le procédé 1, le cylindre 31 obtenu par électrodéposition laisse toute liberté quant à sa géométrie. Ainsi, notamment, le diamètre intérieur 32 n'est pas forcément circulaire mais, par exemple, polygonal ce qui pourrait permettre d'améliorer la transmission d'effort en rotation avec un axe de forme correspondante.Advantageously according to method 1, the cylinder 31 obtained by electroplating leaves full freedom as to its geometry. Thus, in particular, the inner diameter 32 is not necessarily circular but, for example, polygonal which could improve the transmission of force in rotation with a corresponding shape of the axis.

Préférentiellement, le procédé 1 peut comporter, dans une huitième étape 111, consistant à polir le dépôt métallique 31 réalisé lors de l'étape 110 afin de le rendre plan.Preferably, the method 1 may include, in an eighth step 111, polishing the metal deposit 31 made in step 110 to make it plane.

Dans une neuvième étape 112, similaire à l'étape 105 visible à la figure 5, des cavités sont sélectivement gravées, par exemple, par un procédé du type DRIE, dans la couche inférieure 7 en matériau à base de silicium. Ces cavités permettent de former des motifs d'un deuxième ressort-spiral et d'une virole semblable aux motifs 19 et 17 du premier mode de réalisation A.In a ninth step 112, similar to the step 105 visible at the figure 5 cavities are selectively etched, for example, by a method of the DRIE type, in the lower layer 7 of silicon-based material. These cavities make it possible to form patterns of a second spiral spring and a ferrule similar to the patterns 19 and 17 of the first embodiment A.

A la suite de l'étape finale 106 expliquée ci-dessus, on obtient donc, à l'aide du second mode de réalisation C, un spiral double monobloc formé en matériaux à base de silicium avec les mêmes avantages que le mode de réalisation A avec, en plus, une partie 31 en métal. On comprend donc qu'il n'y a pas non plus de problème d'assemblage car il est directement réalisé pendant la fabrication du spiral double. Enfin, avantageusement, un axe peut être chassé contre le diamètre intérieur 32 de la partie métallique. Il est ainsi envisageable, préférentiellement, que les cavités 10 et 12 comportent des sections de plus grandes dimensions que celle du diamètre intérieur 32 de la partie métallique 31 afin d'éviter que l'axe soit en contact gras avec la virole 27.As a result of the final step 106 explained above, therefore, using the second embodiment C, a double monoblock spiral formed of silicon-based materials with the same advantages as embodiment A is obtained. with, in addition, a portion 31 of metal. So we understand that there is no problem of assembly because it is directly realized during the manufacture of the double spiral. Finally, advantageously, an axis can be driven against the inner diameter 32 of the metal part. It is thus possible, preferentially, for the cavities 10 and 12 to have sections of larger dimensions than the inner diameter 32 of the metal part 31 in order to prevent the axis from being in bold contact with the ferrule 27.

Selon les trois modes de réalisation A, B et C, il faut comprendre que spiral double final 21 est ainsi assemblé avant d'être structuré, c'est-à-dire avant d'être gravé et/ou modifié par électrodéposition. Cela permet avantageusement de minimiser les dispersions engendrées par les assemblages actuels de deux spiraux et, par conséquent, améliore la précision d'un organe régulateur améliore la précision d'un organe régulateur dont il serait dépendant.According to the three embodiments A, B and C, it should be understood that final double spiral 21 is thus assembled before being structured, that is to say before being etched and / or modified by electroplating. This advantageously makes it possible to minimize the dispersions generated by current assemblies of two spirals and, consequently, improves the accuracy of a regulator member improves the accuracy of a regulator member of which it would be dependent.

Avantageusement selon l'invention, on comprend également qu'il est possible que plusieurs spiraux doubles 21 puissent être réalisés sur le même substrat 3 ce qui autorise une production en série.Advantageously according to the invention, it is also understood that it is possible for several double spirals 21 to be made on the same substrate 3 which allows a series production.

De plus, il est possible de réaliser un insert de chassage du type des dépôts métalliques 29 et/ou 31 également ou seulement à partir des couches supplémentaire 11 et/ou supérieure 5. Il peut également être envisagé que les deux ressorts-spiraux 23 et 25 soient oxydés afin de les rendre plus résistants mécaniquement et d'ajuster leur coefficient thermo-élastique. Il peut également être prévu qu'une couche conductrice soit déposée sur au moins une partie du spiral double 21 afin d'éviter des problèmes d'isochronisme. Une telle couche peut être du type divulgué dans le document EP 1 837 722 . Enfin, une étape de polissage du type de l'étape 111 peut également être réalisée entre l'étape 107 et l'étape 108 comme visible en traits interrompus à la figure 9.In addition, it is possible to realize a metal deposits type of firing insert 29 and / or 31 also or only from the additional layers 11 and / or upper 5. It can also be envisaged that the two spiral springs 23 and 25 are oxidized to make them more mechanically resistant and to adjust their thermoelastic coefficient. It can also be provided that a conductive layer is deposited on at least a portion of the double spiral 21 in order to avoid problems of isochronism. Such a layer may be of the type disclosed in the document EP 1 837 722 . Finally, a polishing step of the type of step 111 can also be carried out between step 107 and step 108 as visible in dashed lines at the figure 9 .

Claims (20)

  1. Double balance spring (21), characterised in that it comprises, made in a first layer (11) of silicon-based material, a first balance spring (23) coaxially mounted on a collet (13, 27), and in that the collet (13, 27) includes one extending part (9) projecting from said balance spring, which is made in a second layer (5) of silicon-based material, said extending part extending (17) into a third layer (7) of silicon-based material coaxial with a second balance spring (25) to form a one-piece double balance spring (21) made of silicon-based materials.
  2. Double balance spring according to claim 1, characterized in that the collet (13, 9, 17, 27) has approximately the same section in each of said layers so as to facilitate adjustment of said double balance spring.
  3. Double balance spring according to claim 1, characterized in that the collet has a substantially different section across at least one of the layers (5, 7, 11).
  4. Double balance spring according to any of the preceding claims, characterized in that the balance springs (23, 25) include coils wound in the same direction.
  5. Double balance spring according to any of claims 1 to 3, characterized in that the balance springs (23, 25) include coils wound in different directions.
  6. Double balance spring according to any of the preceding claims, characterized in that the ends of the outer curves of each of the balance springs (23, 25) are plumb with each other to allow single means to be used for pinning said double balance spring up to the collet.
  7. Double balance spring according to any of the preceding claims, characterized in that the balance springs (23, 25) have the same angular stiffness.
  8. Double balance spring according to any of claims 1 to 6, characterized in that the balance springs (23, 25) each have distinct angular stiffness.
  9. Double balance spring according to any of the preceding claims, characterized in that at least one of the balance springs (23, 25) has at least one silicon dioxide-based part so as to make said balance spring more mechanically resistant and to adjust the thermo-elastic coefficient thereof.
  10. Double balance spring according to any of the preceding claims, characterized in that the inner coil of at least one of the balance springs (23, 25) has a Grossmann curve so as to improve the concentric development of said double balance spring.
  11. Double balance spring according to any of the preceding claims, characterized in that the collet (27) has one metal part (29, 31) for receiving an arbour that is driven therein.
  12. Timepiece characterized in that it includes a double balance spring according to any of the preceding claims.
  13. Method (1) of manufacturing a double balance spring (21) characterized in that it includes the following steps:
    a) Providing (100) a substrate (3) including a top layer (5) and a bottom layer (7) of silicon-based materials,
    b) selectively etching (101) at least one cavity (8, 10) in the top layer (5) to define the pattern (9) of a first part of a collet (27), made of silicon-based material, of said double balance spring,
    c) joining (102) an additional layer (11) of silicon-based material to the etched top layer (5) of the substrate (3),
    d) selectively etching (103) at least one cavity (12, 14) in the additional layer (11) to continue the pattern of the collet (27) and to define the pattern (15) of a first balance spring (23), made of silicon-based material, of said double balance spring,
    e) selectively etching (105, 108, 112) at least one cavity (18, 20) in the bottom layer (7) to continue the pattern of the collet (27) and to define the pattern (19) of a second balance spring (25), made of silicon-based material, of said double balance spring, and
    f) releasing the double balance spring (21) from the substrate (3).
  14. Method according to claim 13, characterized in that, after step d), it further includes the following step:
    g) oxidising the first balance spring (23), made of silicon-based material, so as to make said balance spring more mechanically resistant and to adjust the thermo-elastic coefficient thereof.
  15. Method according to claim 13 or 14, characterized in that, after step e), it further includes the following step:
    g') oxidising the second balance spring (25), made of silicon-based material, so as to make said balance spring more mechanically resistant and to adjust the thermo-elastic coefficient thereof.
  16. Manufacturing method according to any of claims 13 to 15, characterized in that, prior to step e), it further includes the following step:
    h) selectively depositing (107, 110) at least one metal layer on the bottom layer (7) to define the pattern of a metal part (29, 31) on the collet (27).
  17. Manufacturing method according to claim 16, characterized in that step h) includes the following phase:
    i) growing (107) said deposition by successive metal layers at least partially over the surface of the bottom layer (7) so as to form the metal part (29) for receiving an arbour that is driven therein.
  18. Manufacturing method according to claim 16, characterized in that step h) includes the following phases:
    j) selectively etching (109) at least one cavity (30) in the bottom layer (7) for receiving the metal part (31);
    k) growing (110) said deposition by successive metal layers at least partially in said at least one cavity so as to form the metal part (31) for receiving an arbour, which is driven therein.
  19. Manufacturing method according to any of claims 16 to 18, characterized in that step h) includes the following last phase:
    l)polishing (111) the metal deposition (29, 31).
  20. Manufacturing method of several double balance spring (21) characterized in that each double balance spring is made according to any of the claims 13 to 19, said double balance springs (21) being made on the same substrate (3).
EP08153094A 2008-03-20 2008-03-20 Single-body double spiral and method for manufacturing same Active EP2104006B1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE602008001778T DE602008001778D1 (en) 2008-03-20 2008-03-20 Monoblock double spiral and its manufacturing process
AT08153094T ATE474250T1 (en) 2008-03-20 2008-03-20 MONOBLOCK DOUBLE SPIRAL AND ITS PRODUCTION PROCESS
EP08153094A EP2104006B1 (en) 2008-03-20 2008-03-20 Single-body double spiral and method for manufacturing same
SG200901887-0A SG155864A1 (en) 2008-03-20 2009-03-18 One-piece double balance spring and method of manufacturing the same
CN2009101346805A CN101539754B (en) 2008-03-20 2009-03-19 Single-body double spiral and method for manufacturing same
KR1020090023836A KR20090101118A (en) 2008-03-20 2009-03-20 One-piece double balance spring and method of manufacturing the same
TW098109210A TWI463280B (en) 2008-03-20 2009-03-20 One-piece double balance spring and method of manufacturing the same
US12/408,130 US9459589B2 (en) 2008-03-20 2009-03-20 One-piece double balance spring and method of manufacturing the same
JP2009069979A JP5280903B2 (en) 2008-03-20 2009-03-23 Monolithic double balance spring and manufacturing method thereof
HK10102763.9A HK1136358A1 (en) 2008-03-20 2010-03-16 One-piece double balance spring and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08153094A EP2104006B1 (en) 2008-03-20 2008-03-20 Single-body double spiral and method for manufacturing same

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EP2104006A1 EP2104006A1 (en) 2009-09-23
EP2104006B1 true EP2104006B1 (en) 2010-07-14

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EP (1) EP2104006B1 (en)
JP (1) JP5280903B2 (en)
KR (1) KR20090101118A (en)
CN (1) CN101539754B (en)
AT (1) ATE474250T1 (en)
DE (1) DE602008001778D1 (en)
HK (1) HK1136358A1 (en)
SG (1) SG155864A1 (en)
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JP2009229463A (en) 2009-10-08
TWI463280B (en) 2014-12-01
SG155864A1 (en) 2009-10-29
KR20090101118A (en) 2009-09-24
CN101539754B (en) 2012-08-08
DE602008001778D1 (en) 2010-08-26
US9459589B2 (en) 2016-10-04
TW201007394A (en) 2010-02-16
EP2104006A1 (en) 2009-09-23
ATE474250T1 (en) 2010-07-15
US20090236782A1 (en) 2009-09-24
CN101539754A (en) 2009-09-23
HK1136358A1 (en) 2010-06-25

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