EP1419577A1 - Filteranordnung mit volumenwellen-resonator - Google Patents
Filteranordnung mit volumenwellen-resonatorInfo
- Publication number
- EP1419577A1 EP1419577A1 EP02755508A EP02755508A EP1419577A1 EP 1419577 A1 EP1419577 A1 EP 1419577A1 EP 02755508 A EP02755508 A EP 02755508A EP 02755508 A EP02755508 A EP 02755508A EP 1419577 A1 EP1419577 A1 EP 1419577A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- electrode
- filter arrangement
- reflection element
- piezoelectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 37
- 239000000203 mixture Substances 0.000 claims description 13
- -1 LiTaO 3 Inorganic materials 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 3
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 175
- 239000000758 substrate Substances 0.000 description 44
- 238000001914 filtration Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 238000002161 passivation Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 229910052797 bismuth Inorganic materials 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910020684 PbZr Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/589—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/581—Multiple crystal filters comprising ceramic piezoelectric layers
Definitions
- the invention relates to filter arrangements equipped with at least one volume wave resonator, which contains a resonator unit and a reflection element, the resonator unit having a first and a second electrode and a piezoelectric layer between the first and second electrodes. Furthermore, the invention also relates to a wireless data transmission system, a transmitter, a receiver and a mobile radio device equipped with a filter arrangement and a nolumen wave resonator.
- the piezoelectric layer is a single crystal layer.
- the material of the piezoelectric layer can be applied in a textured manner by producing a piezoelectric layer on a textured electrode.
- the reflection element has several layers with alternating high and low acoustic impedance.
- Such a reflection element is simple and inexpensive to manufacture.
- the invention also relates to a bulk wave resonator which contains a resonator unit and a reflection element, the resonator unit having first and second electrodes and a textured piezoelectric layer between the first and second electrodes.
- the reflection element 2 can consist of only a single layer with a sound reflection material which has a low acoustic impedance.
- This sound reflection material can be an airgel, a xerogel, a glass foam, a foam-like adhesive, a foam or a low-density plastic.
- the reflection element 2 can contain a plurality of layers 7, 8, 9, each with a mixture of at least two materials, the composition of the mixture, which is preferably amorphous, being continuous and relative to the layer thickness within each layer 7, 8, 9 varies periodically. It is preferred that each layer 7, 8, 9 of the reflection element 2 contains a mixture of SiO and Ta 2 O 5 or SiO and Si 3 N 4 . In this embodiment, the composition of the mixture varies periodically, for example sinusoidally, relative to the layer thickness in a layer 7, 8, 9.
- the texture of the piezoelectric layer 4 can be improved up to single crystallinity by further methods such as laser annealing.
- a seed layer for example made of PbZr x Ti 1-x O 3 with 0 ⁇ x 1 1 or PbTiO 3 , can be applied to the first electrode 3.
- Suitable materials for a textured electrode 3, 5 when using A1N or ZnO as the piezoelectric material in the piezoelectric layer 4 are metals which preferably have a cubic surface-centered or hexagonally densely packed structure and whose surface also has an (III) orientation show hexagonal arrangement of the atoms.
- Possible materials for a textured electrode 3, 5 with a face-centered cubic packing and an (III) orientation are, for example, Pt, Al, Al: Si, Al: Cu, Ti, Ni, Cu, Rh, Pd, Ag, r, Au , Ce and Yb.
- Possible materials for a textured electrode 3, 5 with a hexagonally closest packing and a (111) orientation are, for example, Ti, Co, Zn, Y, Zr, Tc, Ru, Hf, Re, Os, Pr, Nd, Pm, Sm , Gd, Tb, Dy, Ho, Er, Tm and Lu.
- layer systems made of different metals are also suitable materials.
- a textured electrode 3, 5 can contain Ti / Pt, Ti / Al, Ti / Al: Si and Ti / Al: Cu.
- an alloy made of metals which has a face-centered cubic packing and an (11 l) orientation it is also possible to use an alloy made of metals which has a face-centered cubic packing and an (11 l) orientation. Alloys of metals, which have a face-centered cubic packing and a (11 l) orientation, with metals or
- Pt (100) oriented By using a barrier layer made of MgO with a (100) orientation, Pt (100) oriented can first be grown as the first electrode 3. As a result, the above-mentioned piezoelectric materials can be grown as a textured layer on the textured first electrode 3. A protective layer made of an organic or an inorganic material or a combination of these materials can be applied over the entire filter arrangement.
- polybenzocyclobutene or polyimide can be used as the organic material and Si 3 N 4 , SiO 2 or Si x O y N z (0 ⁇ x ⁇ 1.0, 0 ⁇ y ⁇ 1.0, 0 ⁇ z ⁇ 1), for example, can be used as the inorganic material .
- a thin layer of SiO 2 can be applied to one or more bulk wave resonators of the filter arrangement in order to detune the bulk wave resonator in a targeted manner. It may be preferred that the thin layer of SiO 2 is only applied to the second electrode 5 of a bulk wave resonator.
- the layer thickness of the thin layer of SiO 2 is preferably between 10 and 100 nm.
- a filter arrangement according to the invention can be used, for example, for signal filtering in a wireless data transmission system, in a mobile radio device, in a transmitter or in a receiver.
- embodiments of the invention are explained which represent exemplary implementation options.
- a filter arrangement made of bulk wave resonators has a substrate 1 made of glass.
- a reflection element 2 which contains seven layers of alternating SiO 2 and Ta 2 O 5 , is applied to the substrate 1.
- the first layer 7 contains SiO 2 on the substrate 1.
- On the uppermost layer 9 of the reflection element 2, which contains SiO 2 there are the individual bulk wave resonators, each comprising a first electrode 3, a piezoelectric layer 4 and a second electrode 5.
- the first electrode 3 contains Ti / Pt, the Pt-containing layer of the first electrode 3 having been grown with a (111) orientation.
- a piezoelectric layer 4 made of PbZro is on each first electrode 3. 3 5Ti 0 . ö5 ⁇ 3 applied with (100) orientation and (11 1) orientation.
- a second Pt electrode 5 is located on each piezoelectric layer 4. There is a thin layer of SiO 2 on the second electrode 5 of each bulk wave resonator.
- the individual bulk wave resonators are electrically connected on the substrate 1 in such a way that a filter arrangement for signal filtering in the high-frequency part of a mobile radio device was obtained.
- Embodiment 3 A filter arrangement made of bulk wave resonators has a substrate 1
- a filter arrangement made of bulk wave resonators has a substrate 1 made of glass.
- a reflection element 2 which contains a layer of porous SiO 2 , is applied to the substrate 1.
- the individual bulk wave resonators, each having a first electrode 3, a piezoelectric one, are located on the reflection element 2
- the first electrode 3 contains Ti / Pt, the Pt-containing layer of the first electrode 3 having been grown with an (III) orientation.
- a layer of Pb (Mg 1 3 Nb 23 ) O 3 -PbTiO 3 with an (OOl) orientation and with an (III) orientation is grown on each first electrode 3 as the piezoelectric layer 4.
- a second Pt electrode 5 is located on each piezoelectric layer 4.
- a thin layer of SiO 2 is located on the second electrode 5 of each volume wave resonator.
- the individual bulk wave resonators are electrically connected on the substrate 1 in such a way that a filter arrangement for signal filtering in the high-frequency part of a mobile radio device has been obtained.
- Embodiment 5 Embodiment 5
- a filter arrangement made of bulk wave resonators has a substrate 1 made of silicon with a passivation layer made of SiO 2 .
- a reflection element 2 which contains seven layers of alternating SiO 2 and Ta 2 Os, is applied to the substrate 1.
- the first layer 7 contains SiO 2 on the substrate 1.
- the individual bulk wave resonators, each comprising a first electrode 3, a piezoelectric layer 4 and a second electrode 5, are located on the uppermost layer 9 of the reflection element 2, which contains SiO 2 .
- the first electrode 3 contains Ti / Pt, the Pt-containing layer of the first electrode 3 being grown with an (III) orientation.
- a textured layer of A1N with a (OOOl) orientation is applied to each first electrode 3 as the piezoelectric layer 4.
- each piezoelectric layer 4 there is a second electrode 5 made of Al.
- the individual bulk wave resonators are electrically connected on the substrate 1 in such a way that a filter arrangement for signal filtering in the high-frequency part of a mobile radio device has been obtained.
- a filter arrangement made of bulk wave resonators has a substrate 1 made of silicon with a passivation layer made of SiO 2 .
- a reflection element 2 which contains nine layers of alternating SiO 2 and Ta 2 O 5 , is applied to the substrate 1.
- the first layer 7 contains SiO 2 on the substrate 1.
- the individual bulk wave resonators, each comprising a first electrode 3, a piezoelectric layer 4 and a second electrode 5, are located on the uppermost layer 9 of the reflection element 2, which contains SiO 2 .
- the first electrode 3 contains Ti / Pt, the Pt-containing layer of the first electrode 3 being grown with an (III) orientation.
- a textured layer of ZnO with a (OOOl) orientation is applied to each first electrode 3 as the piezoelectric layer 4.
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02755508A EP1419577A1 (de) | 2001-08-14 | 2002-08-05 | Filteranordnung mit volumenwellen-resonator |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01306933 | 2001-08-14 | ||
| EP01306933 | 2001-08-14 | ||
| PCT/IB2002/003291 WO2003017481A1 (de) | 2001-08-14 | 2002-08-05 | Filteranordnung mit volumenwellen-resonator |
| EP02755508A EP1419577A1 (de) | 2001-08-14 | 2002-08-05 | Filteranordnung mit volumenwellen-resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1419577A1 true EP1419577A1 (de) | 2004-05-19 |
Family
ID=8182190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP02755508A Withdrawn EP1419577A1 (de) | 2001-08-14 | 2002-08-05 | Filteranordnung mit volumenwellen-resonator |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6975182B2 (zh) |
| EP (1) | EP1419577A1 (zh) |
| JP (1) | JP2005500778A (zh) |
| CN (1) | CN1541447B (zh) |
| WO (1) | WO2003017481A1 (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1419576B1 (de) * | 2001-08-14 | 2008-11-05 | Nxp B.V. | Filteranordnung mit volumenwellen-resonator |
| JP2005197983A (ja) * | 2004-01-07 | 2005-07-21 | Tdk Corp | 薄膜バルク波共振器 |
| JP2005198117A (ja) * | 2004-01-09 | 2005-07-21 | Tdk Corp | 電子デバイス作製用構造体及びこれを用いた電子デバイスの製造方法 |
| JP2006019935A (ja) * | 2004-06-30 | 2006-01-19 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
| KR100671031B1 (ko) | 2004-07-09 | 2007-01-18 | 사공건 | 음향임피던스 정합을 이용한 유량 레벨 측정시스템 |
| JP4016983B2 (ja) * | 2004-12-07 | 2007-12-05 | 株式会社村田製作所 | 圧電薄膜共振子およびその製造方法 |
| WO2006064414A1 (en) * | 2004-12-15 | 2006-06-22 | Philips Intellectual Property & Standards Gmbh | Thin film acoustic reflector stack |
| JP2007129391A (ja) * | 2005-11-02 | 2007-05-24 | Matsushita Electric Ind Co Ltd | 音響共振器及びフィルタ |
| FR2927743B1 (fr) * | 2008-02-15 | 2011-06-03 | St Microelectronics Sa | Circuit de filtrage comportant des resonateurs acoustiques couples |
| EP2436049B1 (en) * | 2009-05-28 | 2019-05-01 | Northrop Grumman Systems Corporation | Lateral over-moded bulk acoustic resonators |
| CN101924529B (zh) * | 2010-08-31 | 2012-10-10 | 庞慰 | 压电谐振器结构 |
| DE102011119660B4 (de) * | 2011-11-29 | 2014-12-11 | Epcos Ag | Mikroakustisches Bauelement mit Wellenleiterschicht |
| CN104917476B (zh) * | 2015-05-28 | 2022-04-12 | 苏州汉天下电子有限公司 | 一种声波谐振器的制造方法 |
| JP7036487B2 (ja) | 2016-07-07 | 2022-03-15 | サムソン エレクトロ－メカニックス カンパニーリミテッド． | 弾性波フィルタ装置及びその製造方法 |
| CN110710106B (zh) * | 2017-07-04 | 2023-10-31 | 京瓷株式会社 | 弹性波装置、分波器及通信装置 |
| JP7038795B2 (ja) * | 2017-07-07 | 2022-03-18 | スカイワークス ソリューションズ，インコーポレイテッド | 圧電材料、弾性波共振器、フィルタ、電子デバイスモジュール及び電子デバイス |
| WO2020132999A1 (zh) * | 2018-12-26 | 2020-07-02 | 天津大学 | 带有温度补偿层的谐振器、滤波器 |
| JP2021141580A (ja) | 2020-02-28 | 2021-09-16 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | バルク弾性波フィルタのための窒化アルミニウムドーパントスキーム |
| CN116639974A (zh) * | 2023-03-22 | 2023-08-25 | 中南大学 | 一种稀土改性knn-lt无铅压电陶瓷及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609555A2 (en) * | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Frequency selective component and method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5873154A (en) | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
| US6239536B1 (en) * | 1998-09-08 | 2001-05-29 | Tfr Technologies, Inc. | Encapsulated thin-film resonator and fabrication method |
| JP4327942B2 (ja) * | 1999-05-20 | 2009-09-09 | Ｔｄｋ株式会社 | 薄膜圧電素子 |
| DE19931297A1 (de) * | 1999-07-07 | 2001-01-11 | Philips Corp Intellectual Pty | Volumenwellen-Filter |
| US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
| US6339276B1 (en) * | 1999-11-01 | 2002-01-15 | Agere Systems Guardian Corp. | Incremental tuning process for electrical resonators based on mechanical motion |
| US6329305B1 (en) * | 2000-02-11 | 2001-12-11 | Agere Systems Guardian Corp. | Method for producing devices having piezoelectric films |
| US6709776B2 (en) * | 2000-04-27 | 2004-03-23 | Tdk Corporation | Multilayer thin film and its fabrication process as well as electron device |
| JP3954395B2 (ja) * | 2001-10-26 | 2007-08-08 | 富士通株式会社 | 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法 |
-
2002
- 2002-08-05 WO PCT/IB2002/003291 patent/WO2003017481A1/de active Application Filing
- 2002-08-05 US US10/486,452 patent/US6975182B2/en not_active Expired - Lifetime
- 2002-08-05 CN CN028158660A patent/CN1541447B/zh not_active Expired - Fee Related
- 2002-08-05 JP JP2003522268A patent/JP2005500778A/ja active Pending
- 2002-08-05 EP EP02755508A patent/EP1419577A1/de not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609555A2 (en) * | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Frequency selective component and method |
Non-Patent Citations (2)
| Title |
|---|
| IIJIMA T. ET AL: "Displacement Property of PZT Films Prepared by CSD Method", PROC. OF THE 2000 12TH IEEE INT. SYMPOSIUM ON APPLICATIONS ON FERROELECTRICS, ISAF 2000, 21 July 2000 (2000-07-21) - 2 August 2000 (2000-08-02), pages 945 - 948 * |
| See also references of WO03017481A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040189423A1 (en) | 2004-09-30 |
| JP2005500778A (ja) | 2005-01-06 |
| CN1541447A (zh) | 2004-10-27 |
| WO2003017481A1 (de) | 2003-02-27 |
| CN1541447B (zh) | 2010-04-21 |
| US6975182B2 (en) | 2005-12-13 |
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