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EP1455452B1 - Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant - Google Patents

Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant Download PDF

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Publication number
EP1455452B1
EP1455452B1 EP03425140A EP03425140A EP1455452B1 EP 1455452 B1 EP1455452 B1 EP 1455452B1 EP 03425140 A EP03425140 A EP 03425140A EP 03425140 A EP03425140 A EP 03425140A EP 1455452 B1 EP1455452 B1 EP 1455452B1
Authority
EP
European Patent Office
Prior art keywords
driving circuit
capacitor
voltage
emitter
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03425140A
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German (de)
English (en)
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EP1455452A1 (fr
Inventor
Rosario Scollo
Simone Buonomo
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STMicroelectronics SRL
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STMicroelectronics SRL
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Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Priority to DE60313733T priority Critical patent/DE60313733T2/de
Priority to EP03425140A priority patent/EP1455452B1/fr
Priority to US10/794,788 priority patent/US7053678B2/en
Publication of EP1455452A1 publication Critical patent/EP1455452A1/fr
Application granted granted Critical
Publication of EP1455452B1 publication Critical patent/EP1455452B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the present invention relates to a driving circuit for a control terminal of a bipolar transistor in the emitter-switching configuration.
  • the invention relates to a driving circuit for a control terminal of a bipolar transistor inserted, in the emitter-switching configuration, between a first and a second voltage references, said driving circuit comprising at least a first resistive element connected to said control terminal and a first capacitor connected to said resistive element in correspondence with a first circuit node and to said second voltage reference.
  • the invention also relates to a driving method for a control terminal of a bipolar transistor in the emitter-switching configuration.
  • the invention particularly relates, but not exclusively, to a high breakdown voltage bipolar transistor being cascode-connected to a low voltage MOS transistor in the so-called emitter-switching configuration and the following description is made with reference to this field of application for convenience of illustration only.
  • a so-called emitter-switching circuit configuration comprises a cascode connection of a bipolar transistor having a high breakdown voltage and of a low voltage power MOSFET transistor.
  • the emitter-switching configuration 1 comprises a bipolar transistor T1 and a MOS transistor M1, cascode-connected to each other, inserted between a first and a second voltage references, particularly the supply voltage Vcc and the ground GND.
  • the emitter-switching configuration 1 provides that the bipolar transistor T1 is of the HV (High Voltage) type, i.e. a high breakdown voltage transistor, while the MOS transistor M 1 is of the LV (Low Voltage) type, i.e. a low breakdown voltage transistor.
  • HV High Voltage
  • MOS transistor M 1 Low Voltage
  • the bipolar transistor T1 has a collector terminal connected to the supply voltage reference Vcc by means of an inductive load L1 and a control or base terminal connected to a driving circuit 2.
  • the MOS transistor M 1 has in turn a control or gate terminal connected to the driving circuit 2.
  • the driving circuit 2 comprises:
  • the electrolytic capacitor CB has the function of storing energy during the bipolar transistor T1 turn-off, in order to reuse it during a following turn-on and conduction step of the transistor itself, while the Zener diode prevents the base voltage value of the bipolar transistor T1 from exceeding a predetermined threshold.
  • the emitter-switching configuration known for a long time to the skilled in the art, is at present particularly interesting due to the marketing of bipolar transistors having a square RBSOA [Reverse Biased Safe Operating Area] (in the emitter-switching configuration) with a current near to the peak current and a voltage equal to the breakdown voltage BVCES between the collector and emitter terminals when the base terminal is short-circuited with the emitter terminal [Breakdown Voltage Collector-Emitter Short], as well as of MOS power transistors having a very low drain-source resistance value in conduction conditions, R DSON , and being thus almost similar to ideal switches.
  • RBSOA Reverse Biased Safe Operating Area
  • the emitter-switching configuration main advantages are, as everybody knows, an extremely low in-conduction voltage drop (typical of bipolar transistors) and a high turn-off speed.
  • the current outputted from the bipolar transistor base terminal is equal to the collector terminal current of this transistor, i.e. a very high current. This causes a drastic reduction both of the storage time and of the fall time, allowing the emitter-switching configuration to operate even at frequencies of 150 kHz.
  • the driving performed through the driving circuit 2 is very useful and effective in all those cases in which the current in the emitter-switching configuration 1 is void, or very small with respect to the nominal current, in the turn-on step.
  • the condition (1) usually occurs when operating at relatively high frequencies and with not too high currents, or better when the bipolar transistor gain value hfe is not too low.
  • the driving energy required for the conduction is slightly higher than the energy recovered during the turn-off. It is thus sufficient to supply the base terminal with a very low power to replace inevitable losses.
  • Figure 2 shows the trend of voltage VGS values between the gate and source terminals of the MOS transistor M1, of the voltage between the bipolar transistor collector terminal and the MOS transistor source terminal, VCS, and of the base and collector currents of the bipolar transistor T1 with reference to a flyback converter operating at a frequency of 100 kHz and having a void turn-on current since the converter operates discontinuously.
  • the so-called phenomenon of the dynamic VCESAT voltage between the bipolar transistor collector and emitter terminals involves excessive power dissipations.
  • This phenomenon consists in that, when turning on, there is a certain delay before reaching the static VCESAT voltage value, and it is thus necessary to overflow with carriers the bipolar transistor base region as fast as possible in order to make the VCESAT voltage value decrease and reach as soon as possible the steady value.
  • the technical problem underlying the present invention is to provide a driving circuit of an emitter-switching configuration, having such structural and functional characteristics as to allow the base current of the bipolar transistor comprised in this configuration to be modulated, overcoming therefore the limits and drawbacks still affecting prior art driving circuits.
  • the solutive idea underlying the present invention is to provide at least a pair of voltage values to be applied to the bipolar transistor base terminal in the emitter-switching configuration.
  • the emitter-switching configuration 10 comprises a bipolar transistor T10 and a MOS transistor M10, cascode-connected to each other, inserted between a first and a second voltage references, particularly the supply voltage Vcc and the ground GND.
  • the emitter-switching configuration 10 provides that the bipolar transistor T10 is of the HV (High Voltage) type, i.e. a high breakdown voltage transistor, while the MOS transistor M10 is of the LV (Low Voltage) type, i.e. a low breakdown voltage transistor.
  • HV High Voltage
  • MOS transistor M10 Low Voltage
  • the bipolar transistor T10 has a collector terminal connected to the supply voltage reference Vcc by means of an inductive load L10 and a control or base terminal B10 connected to the driving circuit 12.
  • the MOS transistor M10 has in turn a control or gate terminal G10 connected to the driving circuit 12.
  • the driving circuit 12 comprises:
  • the driving circuit 12 comprises a first and a second capacitor C 1 and C2, as well as a Zener diode D10.
  • this second capacitor C2 is of the electrolytic type.
  • the first capacitor C1 is connected to the first resistive element R1 (in correspondence with a first circuit node X1) and to the ground GND.
  • the second capacitor C2 is connected to a second circuit node X2 and to the ground GND. As shown in figure 3, the second capacitor C2 has the positive plate connected to the second circuit node X2.
  • the Zener diode D10 is inserted between the first X1 and the second X2 circuit nodes and, particularly, it has a cathode terminal connected to the first circuit node X1 and an anode terminal connected to the second circuit node X2.
  • the method according to the invention allows the control terminal B10 of the bipolar transistor T10 in the emitter-switching configuration (10) to be driven and it provides the following steps of:
  • the second voltage value V2 is kept constant by the second capacitor C2, while the first voltage value V1 is caused to vary according to need by varying the value of the first capacitor C1 and of the Zener diode D10.
  • the driving circuit 12 according to the invention is optimal from the performance and cost point of view, the simplicity and efficacy thereof being its strong points.
  • the driving circuit 12 according to the invention is particularly effective in the following conditions:
  • the driving circuit 12 allows a starting peak of the base current IB being as high as desired to be obtained, while the emitter-switching configuration 10 ensures a turn-off current I BOFF being as high and thus small tstorage storage time values.
  • the voltage value V2 on the second circuit node X2 is kept constant, due to the presence of the second capacitor C2, while the highest voltage value V1 on the first circuit node X1 is caused to vary according to need, by acting on the values of the first capacitor C1 and of the Zener diode D10.
  • the driving circuit 12 since it is necessary to obtain a very high base current value IB during the turn-on, it is required that the voltage V1 is higher than V2 during the turn-on. To attain this purpose, through the driving circuit 12 according to the invention, it is sufficient to choose a relatively low value of the first capacitor C1. For example, for operating frequencies comprised between 60 and 150 kHz the value of the first capacitor C1 is preferably chosen between 680 and 180 nF. For an operating frequency of 100 kHz, the value of the first capacitor C1 can be chosen between 200 and 300 nF.
  • the highest possible value of the base current IB during the turn-on depends on the value of this first capacitor C1, as well as the duration of the starting current spike.
  • the lowest the value of the first capacitor C1 is, the shortest the duration of this spike is.
  • the value of the resistive element R1 connected to the base terminal B10 of the bipolar transistor T10 is advantageously chosen low (0.33 ⁇ ) and it contributes to determining the base current IB both during the turn-on and in the conduction step.
  • the main advantages of the driving circuit 12 according to the invention are thus:
  • the driving circuit 12 allows the current IB of the base terminal B10 of the bipolar transistor T10 to be controlled by means of the Zener diode D10 which fixes precisely the highest voltage value V1 on the first circuit node X1 (with respect to the voltage value V2 on the second circuit node X2) which determines in turn the base current IB peak.
  • Another important advantage of the driving circuit 2 according to the invention is the possibility to vary the voltage V2 on the second circuit node X2, with a negligible influence on the turn-on base current IB, in order to vary the highest value during the conduction, which fixes in turn the saturation condition of the emitter-switching configuration 10.
  • the Applicant has performed a simulation in a so-called forward converter operating at a frequency of 110 kHz, with a duty cycle, at the highest operating power, slightly higher than 20% and with a higher turn-on current ICturn-ON than the turn-off current ICOFF.
  • figure 4 represents the waveforms obtained by driving the emitter-switching configuration by means of the driving circuit 12 according to the invention as shown in figure 3, while figure 5 represents the waveforms corresponding to a same emitter-switching configuration 1 driven by means of a driving circuit according to the prior art, as the one shown in figure 1.
  • the dissipated power for driving the base terminal is very low with the driving circuit 12 according to the invention, as it is in the case of the known driving circuit. In fact, the amount of charge supplied during the turn-on step is almost equal to the one recovered during the turn-off step.
  • the integration area A1 is almost equal to the integration area A2.
  • the amount of charge which must be provided through an external supply is only the one represented by the integration area A3.
  • Figures 6 and 7 represent the waveforms corresponding particularly to the turn-on of the two driving circuits of figure 3 and 1 respectively.
  • Waveforms F1a and F1b are the instantaneous power dissipated by the emitter-switching configuration, i.e. the product between the voltage VCS and the collector current IC. The area subtended by these curves is thus an energy, and, particularly, the energy dissipated during the turn-on. It is thus evident how to obtain, with the driving circuit 12 according to the invention, a reduction to almost one third both of the turn-on time and of the energy dissipated at the turn-on.
  • Waveforms F2a and F2b are instead the base terminal current.
  • figure 6 shows how the Vb value which, at the turn-on, leads to a very high base current value IB, starts then decreasing to finally reach the steady value equal to V1 less the voltage drop on the Zener diode D10.
  • the base current IB after reaching the maximum, decreases so as to stabilise at the value set just by V2 (as shown also in figure 4).
  • VCS VCE + VDSON and since the voltage VDSON reaches very rapidly the steady value.

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Claims (10)

  1. Circuit d'excitation pour une borne de commande (B10) d'un transistor bipolaire (T10) inséré, dans la configuration de commutation d'émetteur, entre une première référence de tension (Vcc) et une deuxième référence de tension (GND), ledit circuit d'excitation comprenant au moins un premier élément résistif (R1) connecté à ladite borne de commande (B10) et une première capacité (C1) connectée au dit élément résistif (R1) correspondant à un premier noeud de circuit (X1) et à ladite deuxième tension de référence (GND), caractérisé en ce qu'il comprend en outre une diode Zener (D10) connectée entre ledit premier noeud de circuit (X1) et un deuxième noeud de circuit (X2) ainsi qu'une deuxième capacité (C2), insérée entre ledit deuxième noeud de circuit (X2) et ladite deuxième tension de référence (GND)
  2. Circuit d'excitation selon la revendication 1, caractérisé en ce que ladite première capacité (C1) a une valeur inférieure à celle de ladite deuxième capacité (C2)
  3. Circuit d'excitation selon la revendication 1, caractérisé en ce que ladite diode Zener (D10) a une borne de cathode connectée au dit premier noeud de circuit (X1) et une borne d'anode connectée au dit deuxième noeud de circuit (X2).
  4. Circuit d'excitation selon la revendication 1, caractérisé en ce que ladite deuxième capacité (C2) est de type électrolytique.
  5. Circuit d'excitation selon la revendication 1, caractérisé en ce que ladite deuxième capacité (C2) a la plaque positive connectée au dit deuxième noeud de circuit (X2).
  6. Circuit d'excitation selon la revendication 1, caractérisé en ce que ladite première capacité (C1) a une valeur opportunément basse, comprise de préférence entre 680 et 180 nF afin de fonctionner à des fréquences comprises entre 60 et 150 kHz.
  7. Circuit d'excitation selon la revendication 1, caractérisé en ce que ledit premier élément résistif (R1) a une valeur inférieure à 0,5 Ω, de préférence égale à 0,33 Ω.
  8. Procédé pour exciter une borne de commande (B10) d'un transistor bipolaire (T10) inséré, dans la configuration de commutation d'émetteur (10), entre une première et une deuxième tensions de référence (Vcc, GND) caractérisé en ce qu'il dispose des étapes consistant à :
    - appliquer une première valeur de tension (V1) à ladite borne de commande (B10) au moyen d'une première capacité (C1) connectée à ladite borne de commande (B10) au moyen d'un élément résistif (R1) ; et
    - appliquer une deuxième valeur de tension (V2) à ladite borne de commande (B10) au moyen d'une deuxième capacité (C2) connectée à ladite borne de commande (B10) au moyen d'une diode Zener (D10) et dudit élément résistif (R1) connectés en série,
    ladite première valeur de tension (V1) étant supérieure à ladite deuxième valeur de tension (V2)
  9. Procédé d'excitation selon la revendication 8, caractérisé en ce que ladite deuxième valeur de tension (V2) est maintenue constante par ladite deuxième capacité (C2).
  10. Procédé d'excitation selon la revendication 8, caractérisé en ce que l'on fait varier selon les besoins ladite première valeur de tension (V1) en variant la valeur de ladite première capacité (C1) et de ladite diode Zener (D10)
EP03425140A 2003-03-05 2003-03-05 Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant Expired - Lifetime EP1455452B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE60313733T DE60313733T2 (de) 2003-03-05 2003-03-05 Ansteuerschaltung für einen Steueranschluss eines Bipolartransistors, der in der Emitterschattkonfiguration ist und entsprechenes Ansteuerverfahren
EP03425140A EP1455452B1 (fr) 2003-03-05 2003-03-05 Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant
US10/794,788 US7053678B2 (en) 2003-03-05 2004-03-05 Driving circuit for a control terminal of a bipolar transistor in an emitter-switching configuration and corresponding method for reducing the VCESAT dynamic phenomenon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425140A EP1455452B1 (fr) 2003-03-05 2003-03-05 Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant

Publications (2)

Publication Number Publication Date
EP1455452A1 EP1455452A1 (fr) 2004-09-08
EP1455452B1 true EP1455452B1 (fr) 2007-05-09

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EP03425140A Expired - Lifetime EP1455452B1 (fr) 2003-03-05 2003-03-05 Circuit d'excitation pour une borne de commande d'un transistor bipolaire dans la configuration de commutation d'émetteur et procédé d'excitation correspondant

Country Status (3)

Country Link
US (1) US7053678B2 (fr)
EP (1) EP1455452B1 (fr)
DE (1) DE60313733T2 (fr)

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US11140751B2 (en) 2018-04-23 2021-10-05 Whirlpool Corporation System and method for controlling quasi-resonant induction heating devices

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ITMI20040356A1 (it) 2004-02-27 2004-05-27 St Microelectronics Srl Circuito di pilotaggio di una configurazione emitter switching per controllare il livello di saturazione di un transistore di potenza in applicazioni che prevedono correnti di collettoree variabili in un ampio intervallo
DE602004013718D1 (de) * 2004-03-31 2008-06-26 St Microelectronics Srl Emitterschaltungssteuerschaltung zur Reglung der Speicherzeit
CN101326717A (zh) 2005-12-13 2008-12-17 意法半导体股份有限公司 发射极开关结构的驱动电路
DE102007013824B4 (de) 2006-03-22 2013-10-24 Denso Corporation Schaltkreis mit einem Transistor
ITMI20070141A1 (it) 2007-01-30 2008-07-31 St Microelectronics Srl Circuito di pilotaggio per una configurazione emitter-switching di transistori
US9112428B2 (en) * 2012-10-05 2015-08-18 Power Integrations, Inc. Application of normally-on switching elements/devices in a stacked switching circuit
US10605464B2 (en) 2012-10-15 2020-03-31 Whirlpool Corporation Induction cooktop
ITTO20120896A1 (it) 2012-10-15 2014-04-16 Indesit Co Spa Piano cottura a induzione
US8847656B1 (en) * 2013-07-03 2014-09-30 Honeywell International Inc. Approach for driving multiple MOSFETs in parallel for high power solid state power controller applications
US9571091B2 (en) * 2013-12-06 2017-02-14 Astec International Limited Methods for overdriving a base current of an emitter switched bipolar junction transistor and corresponding circuits
CN105849660B (zh) 2013-12-19 2020-05-08 伊莱克斯公司 机器人清扫装置
US9413241B1 (en) * 2015-01-15 2016-08-09 Dialog Semiconductor Inc. Self-powered BJT driver for power supplies
EP3432682A1 (fr) 2017-07-18 2019-01-23 Whirlpool Corporation Procédé de fonctionnement d'une plaque de cuisson par induction et plaque de cuisson faisant appel à un tel procédé
US10993292B2 (en) 2017-10-23 2021-04-27 Whirlpool Corporation System and method for tuning an induction circuit
JP2020161974A (ja) * 2019-03-26 2020-10-01 株式会社ダイヘン Ｐｉｎダイオードの駆動回路及び閾値決定方法
JP7196048B2 (ja) * 2019-10-23 2022-12-26 株式会社東芝 サージ制御回路及び電力変換器

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US11140751B2 (en) 2018-04-23 2021-10-05 Whirlpool Corporation System and method for controlling quasi-resonant induction heating devices

Also Published As

Publication number Publication date
DE60313733T2 (de) 2008-01-24
US20040217801A1 (en) 2004-11-04
DE60313733D1 (de) 2007-06-21
EP1455452A1 (fr) 2004-09-08
US7053678B2 (en) 2006-05-30

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