EP0568920A1 - Générateur de plasma à couplage inductif - Google Patents
Générateur de plasma à couplage inductif Download PDFInfo
- Publication number
- EP0568920A1 EP0568920A1 EP93106923A EP93106923A EP0568920A1 EP 0568920 A1 EP0568920 A1 EP 0568920A1 EP 93106923 A EP93106923 A EP 93106923A EP 93106923 A EP93106923 A EP 93106923A EP 0568920 A1 EP0568920 A1 EP 0568920A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- power
- inductively coupled
- coupled plasma
- plasma generator
- oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 238000001593 atomic mass spectrometry Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/36—Circuit arrangements
Definitions
- the present invention relates to plasma emission sources for use in analytical instruments such as spectrometers.
- Plasma emission sources provide photons and ions which are used to excite a sample to cause emission of light at wavelengths representative of the atoms of the sample. The emitted light is then detected by a spectrometer to identify the sample.
- Apparatus which is used to generate or create plasma emission sources generally comprise radio frequency (RF) generators the output of which is inductively coupled to a load such as a plasma torch.
- RF radio frequency
- a problem associated with all such prior systems lies in their inability to adjust and control output power adequately for use in present day systems.
- the present invention substantially eliminates this problem.
- the present invention solves the mismatch problem without the need of such cumbersome arrangements.
- the present invention eliminated the need for such elaborate and cumbersome arrangements. Since impedance and frequency are functionally interrelated, the present invention overcomes the mismatch problem by permitting the RF frequency to vary to automatically adjust for impedance mismatch. At more fully set forth in the description, a signal representative of deviation of actual RF power from desired RF power is used to control the RF generator.
- plasma potential may be high relative to ground which often results in destructive parasitic discharge to the glass torch in atomic emission spectrography, or erosive damage to the sampler cone in mass spectrography.
- the present invention overcomes this problem by maintaining the plasma at or near ground potential during operation.
- the present invention also includes means for monitoring the parameters of the generator during operation and provides means for closing down operation to prevent damage to the circuitry, e.g., in inductively coupled plasma generators, non-ignition or bad ignition of the plasma can be a serious problem since such conditions may cause damage to circuitry or the glass torch.
- the present invention solves this problem by continuously monitoring generator perimeters to detect such ignition problems and shut down the system before damage is incurred.
- the present invention relates to an inductively coupled plasma generator for generating plasma for use in analytical instruments, e.g., atomic emission or mass spectrometers. It comprises circuitry including a vacuum triode tube adapted to be used as a radio frequency oscillator for generating a plasma.
- the primary purpose of the present invention is the accurate adjustment and stable control of RF power to the load coil.
- the present invention comprises a closed loop feed back circuit wherein actual power generated is used to control oscillator output power.
- means are provided for measuring and multiplying RF voltage and current to provide an output representative of actual RF output power. This output is compared to commanded power to produce an error signal for application to the grid of the oscillator to control its output.
- the present invention also includes means for maintaining the plasma at or near zero potential as well as means for monitoring the running conditions of the generator.
- the condition of the plasma is continuously monitored by sensing the condition of circuit parameter in order to present damage caused by non-ignition or bad ignition of the plasma.
- the inductively coupled plasma generator 10 of the present invention comprises a triode vacuum tube 11 designed to operate as an oscillator, e.g., a Colpitts oscillator as shown in Fig. 2 in the radio frequency RF range.
- Plate voltage is supplied to generator 10 by means of a high voltage power supply 12.
- High voltage power supply 12 has the capability of supplying voltage at several discrete levels, e.g., four discrete values which correspond to low, medium, high, and ignite power ranges.
- Grid bias voltage is supplied to the generator 10 by means of grid control circuit 13.
- Oscillator or generator 11 is connected to plasma load coil 17 which is disposed about glass torch 18.
- Output power to the load coil 17 is delivered via oscillator resonant circuit 16 of which load coil 17 is a part.
- Resonant circuit 16 is shown in schematic detail in Fig. 2.
- Argon or a similar gas is introduced through glass torch 18 via, e.g., an opening 18a is ionized by the electromagnetic field caused by RF power circulating through resonant output circuit 16 of which load coil 17 is the inductive part thereof.
- the generated plasma is symbolically shown as a flame 18b. It should be noted, however, that the plasma which comprises photons and ions is used differently depending on its use in atomic emission spectrometry or mass spectrometry.
- the capacitance of the oscillator resonant circuit 16 is split as shown in Fig. 2 to act as a voltage divider to cause a virtual ground to appear at the center of load coil 17. This permits the plasma to be operated at zero or near zero potential with its attendant advantage of eliminating parasitic discharges when used in an atomic emission spectrometer and discharges that erode the orifice of the sampler when used in a mass spectrometer.
- a capacitive voltage divider circuit 14 and a current transformer circuit 15 are connected between generator 11 and radio frequency multiplier circuit 19.
- Radio frequency multiplier circuit 19 provides an input to comparator circuit 19.
- Capacitive voltage divider circuit 14 provides an output representative of the RF voltage output of generator 11 to RF multiplier circuit 19 while current transformer 15 provides a signal representative of the RF current output of generator 11 to RF multiplier circuit 19.
- Voltage divider circuit 14 and current transformer circuit 15 are connected so as to not interfere with the RF power delivered to the load.
- RF voltage and current are in effect multiplied in RF multiplier circuit 19 to give an output signal representative of the RF power actually being delivered to the plasma 18b through the load coil 17.
- RF multiplier circuit 19 contains identical logarithmic response amplifiers and a summation circuit similar to the AD834 four-quadrant multiplier as shown and described on page 6-65 of Analog Devices, Inc., "Linear Products Databook” 1990/91 Edition. Since the RF voltage signal and the RF current signal are logarithmically amplified and then added together, they are arithmetically equivalent to being multiplied together. Since the arithmetic product of RF voltage and RF current is RF power, the output signal from RF multiplier circuit 19 is representative of the RF power being delivered to the plasma through the load coil 17.
- the signal representative of RF power is continuously applied to comparator circuit 21.
- a microprocessor 23 provides a second input to comparator circuit 21 indicative of desired or commanded RF power.
- a digital to analog converter is interposed between microprocessor 23 and comparator circuit 22 to convert the digital data from microprocessor to analog form to be compatible with the analog signal from RF multiplier circuit 19.
- the comparator circuit 21 provides an error signal to grid control circuit 13.
- This error signal is representative of the positive or negative deviation of actual RF power going to the load coil 17 from desired or commanded power provided by microprocessor 23. This value among others is provided by a host computer having a keyboard entry system or the like and a display and/or printer.
- the signal from the comparator circuit 21 fed back to the grid control circuit 13 and maintains RF power to the load coil 17 constant accurately adjusted and stable at the commanded power.
- Grid control circuit contains a power transistor, e.g., an FET transistor, to which the error signal is fed.
- the transistor controls the grid bias of triode vacuum tube 11 in accordance with the error signal.
- vacuum tube 11 of an oscillator In order to extend the range of vacuum tube 11 of an oscillator, its efficiency may be varied between approximately between 40% to 60% by varying grid current of vacuum tube 11 in accordance with actual output power, e.g., low efficiency for low grid current and high efficiency for high grid current.
- a meter circuit 25 has an input from generator 11.
- the meter circuit 25 has an output connected to comparator circuit 26 and analog to digital converter circuit 29 which, itself, provides an input to microprocessor 23.
- a monitor circuit 27 provides a second input to comparator circuit 26 whose output is provided as an input to protection circuit.
- the output of protection circuit 28 is connected to high voltage power supply.
- One purpose of this arrangement is to monitor the operating parameters of the generator 11 such as plate voltage, plate current, and grid current. Thus, if one of the parameters exceeds a critical value set by monitor circuit 27, protective circuit 28 will cause high voltage power supply 12 to shut down. This feature is particularly important when determining the operating conditions of the plasma by monitoring grid current. Prior to ignition of the plasma discharge, grid current is extremely high. This is so since very little power is being absorbed from the load coil and most of the power provided by RF generator 11 is fed back to the grid of the generator which, as aforesaid, is essentially a triode vacuum tube. If the grid current remains high beyond a predetermined time, it may be indicative of an ignition problem.
- protective circuit 28 shuts off high voltage from power supply 12 to generator 11.
- the grid current may be indicative of a good ignition by reverting from a high pre-ignition value to a stable lower running condition.
- Variation in grid current may also be indicative of a "bad" plasma that is one that comprises a destructive discharge. This is also detectable in time to shut off high voltage to the generator 11 before damage is incurred.
- microprocessor 23 controls the power level output of the generator 11 by adjusting amount of power provided by the power source 12. This may be accomplished, e.g., by turning on one of four triacs or similar devices that control the level of actual high voltage to the plate of triode vacuum tube 11.
- the oscillator of the present invention comprises triode vacuum tube 11 connected as a somewhat modified Colpitts oscillator.
- Resonant output circuit 16 essentially comprises the load coil 17 connected in parallel to capacitors C1 and C2 whose juncture is connected to the grounded cathode.
- the present Colpitts oscillator circuit differs from the conventional circuit in that in the present arrangement C1 and C2 are made equal in value to each other and reverse connected whereas in the conventional arrangement they are not equal.
- the ratio of C2 to C3 controls grid drive power whereas in the conventional setup, the ratio of C1 to C2 performs this function.
- the microprocessor 23 obtains information on the required or commanded RF power and other operational parameter, e.g., level of plate voltage from high voltage power supply 12 from host computer 24.
- the commanded RF power signal is provided to comparator circuit 22 via digital to analog converter 22 while the high voltage (low, medium, high or ignite) at which the oscillator is to be operated is provided via to high voltage power supply 12 via digital input output circuit 31.
- the grid current of the vacuum tube is constantly monitored to prevent the above-mentioned damage problems.
- the power adjustment range of the generator is expanded by varying the efficiency of the RF generator's vacuum tube oscillator.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Plasma Technology (AREA)
- Electron Tubes For Measurement (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US879678 | 1986-06-27 | ||
US87967892A | 1992-05-07 | 1992-05-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0568920A1 true EP0568920A1 (fr) | 1993-11-10 |
EP0568920B1 EP0568920B1 (fr) | 1996-03-27 |
Family
ID=25374663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19930106923 Expired - Lifetime EP0568920B1 (fr) | 1992-05-07 | 1993-04-28 | Générateur de plasma à couplage inductif |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0568920B1 (fr) |
JP (1) | JP3167221B2 (fr) |
DE (1) | DE69301952T2 (fr) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0753876A2 (fr) * | 1995-06-07 | 1997-01-15 | Eni, A Division Of Astec America, Inc. | Echantilloneur à crénelage pour détection de plasma par une sonde |
US6329757B1 (en) | 1996-12-31 | 2001-12-11 | The Perkin-Elmer Corporation | High frequency transistor oscillator system |
US6740842B2 (en) | 1999-07-13 | 2004-05-25 | Tokyo Electron Limited | Radio frequency power source for generating an inductively coupled plasma |
WO2005031790A1 (fr) * | 2003-09-22 | 2005-04-07 | Mks Instruments, Inc. | Procede et dispositif permettant d'empecher les instabilites dans un traitement au plasma radiofrequence |
US7314537B2 (en) * | 2003-09-30 | 2008-01-01 | Tokyo Electron Limited | Method and apparatus for detecting a plasma |
WO2008054391A1 (fr) * | 2006-10-31 | 2008-05-08 | Mks Instruments, Inc. | Procédé et appareil pour empêcher des instabilités dans un traitement par plasma radiofréquence |
US7755300B2 (en) | 2003-09-22 | 2010-07-13 | Mks Instruments, Inc. | Method and apparatus for preventing instabilities in radio-frequency plasma processing |
CN104135812A (zh) * | 2014-07-15 | 2014-11-05 | 华中科技大学 | 一种基于等离子体发光强度检测的射频离子源保护装置 |
GB2479702B (en) * | 2009-02-27 | 2015-06-03 | Mks Instr Inc | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator |
WO2015121186A1 (fr) * | 2014-02-12 | 2015-08-20 | Messer Cutting Systems Gmbh | Machine de découpe par plasma avec système de protection ainsi que procédé d'exploitation de la machine de découpe par plasma |
US9526161B2 (en) | 2014-08-29 | 2016-12-20 | Shimadzu Corporation | High-frequency power supply device |
US9648719B2 (en) | 2014-09-03 | 2017-05-09 | Shimadzu Corporation | High-frequency power supply device |
US9774086B2 (en) | 2007-03-02 | 2017-09-26 | Qualcomm Incorporated | Wireless power apparatus and methods |
CN115728002A (zh) * | 2022-09-07 | 2023-03-03 | 南京航空航天大学 | 一种基于电感耦合等离子体的真空玻璃真空度检测系统 |
CN117545162A (zh) * | 2023-11-08 | 2024-02-09 | 江苏神州半导体科技有限公司 | 一种远程等离子源的预激发点火装置及其控制方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6305316B1 (en) * | 2000-07-20 | 2001-10-23 | Axcelis Technologies, Inc. | Integrated power oscillator RF source of plasma immersion ion implantation system |
US9130602B2 (en) | 2006-01-18 | 2015-09-08 | Qualcomm Incorporated | Method and apparatus for delivering energy to an electrical or electronic device via a wireless link |
US8447234B2 (en) | 2006-01-18 | 2013-05-21 | Qualcomm Incorporated | Method and system for powering an electronic device via a wireless link |
JP4586738B2 (ja) * | 2006-02-02 | 2010-11-24 | 株式会社島津製作所 | Icp分析装置 |
US8378522B2 (en) | 2007-03-02 | 2013-02-19 | Qualcomm, Incorporated | Maximizing power yield from wireless power magnetic resonators |
US9124120B2 (en) | 2007-06-11 | 2015-09-01 | Qualcomm Incorporated | Wireless power system and proximity effects |
CN103187629B (zh) | 2007-08-09 | 2016-08-24 | 高通股份有限公司 | 增加谐振器的q因数 |
CN101828300A (zh) | 2007-09-17 | 2010-09-08 | 高通股份有限公司 | 用于无线能量转移的发射器和接收器 |
US8629576B2 (en) | 2008-03-28 | 2014-01-14 | Qualcomm Incorporated | Tuning and gain control in electro-magnetic power systems |
US8502455B2 (en) | 2009-05-29 | 2013-08-06 | Agilent Technologies, Inc. | Atmospheric inductively coupled plasma generator |
US9601267B2 (en) | 2013-07-03 | 2017-03-21 | Qualcomm Incorporated | Wireless power transmitter with a plurality of magnetic oscillators |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1109602A (en) * | 1963-10-21 | 1968-04-10 | Albright & Wilson Mfg Ltd | Improvements relating to spectroscopic methods and apparatus |
US3909664A (en) * | 1973-09-17 | 1975-09-30 | Outboard Marine Corp | Plasma spraying method and apparatus |
US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
EP0155496A2 (fr) * | 1984-03-02 | 1985-09-25 | The Perkin-Elmer Corporation | Source d'émission à plasma |
EP0281158A2 (fr) * | 1987-03-06 | 1988-09-07 | The Perkin-Elmer Corporation | Torche à plasma, à couplage inductif |
-
1993
- 1993-04-20 JP JP11516993A patent/JP3167221B2/ja not_active Expired - Lifetime
- 1993-04-28 EP EP19930106923 patent/EP0568920B1/fr not_active Expired - Lifetime
- 1993-04-28 DE DE1993601952 patent/DE69301952T2/de not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1109602A (en) * | 1963-10-21 | 1968-04-10 | Albright & Wilson Mfg Ltd | Improvements relating to spectroscopic methods and apparatus |
US3909664A (en) * | 1973-09-17 | 1975-09-30 | Outboard Marine Corp | Plasma spraying method and apparatus |
US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
EP0155496A2 (fr) * | 1984-03-02 | 1985-09-25 | The Perkin-Elmer Corporation | Source d'émission à plasma |
EP0281158A2 (fr) * | 1987-03-06 | 1988-09-07 | The Perkin-Elmer Corporation | Torche à plasma, à couplage inductif |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 10, no. 135 (P-457)(2192) 20 May 1986 & JP-A-60 256 819 ( NIPPON SHINKU GIJUTSU ) 18 December 1985 * |
PATENT ABSTRACTS OF JAPAN vol. 6, no. 169 (C-122)2 September 1982 & JP-A-57 084 743 ( FUJITSU ) 27 May 1982 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0753876A2 (fr) * | 1995-06-07 | 1997-01-15 | Eni, A Division Of Astec America, Inc. | Echantilloneur à crénelage pour détection de plasma par une sonde |
EP0753876A3 (fr) * | 1995-06-07 | 1999-01-13 | Eni, A Division Of Astec America, Inc. | Echantilloneur à crénelage pour détection de plasma par une sonde |
US6329757B1 (en) | 1996-12-31 | 2001-12-11 | The Perkin-Elmer Corporation | High frequency transistor oscillator system |
US6740842B2 (en) | 1999-07-13 | 2004-05-25 | Tokyo Electron Limited | Radio frequency power source for generating an inductively coupled plasma |
US7755300B2 (en) | 2003-09-22 | 2010-07-13 | Mks Instruments, Inc. | Method and apparatus for preventing instabilities in radio-frequency plasma processing |
US7304438B2 (en) | 2003-09-22 | 2007-12-04 | Mks Instruments, Inc. | Method and apparatus for preventing instabilities in radio-frequency plasma processing |
WO2005031790A1 (fr) * | 2003-09-22 | 2005-04-07 | Mks Instruments, Inc. | Procede et dispositif permettant d'empecher les instabilites dans un traitement au plasma radiofrequence |
US7314537B2 (en) * | 2003-09-30 | 2008-01-01 | Tokyo Electron Limited | Method and apparatus for detecting a plasma |
WO2008054391A1 (fr) * | 2006-10-31 | 2008-05-08 | Mks Instruments, Inc. | Procédé et appareil pour empêcher des instabilités dans un traitement par plasma radiofréquence |
US9774086B2 (en) | 2007-03-02 | 2017-09-26 | Qualcomm Incorporated | Wireless power apparatus and methods |
GB2479702B (en) * | 2009-02-27 | 2015-06-03 | Mks Instr Inc | Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator |
WO2015121186A1 (fr) * | 2014-02-12 | 2015-08-20 | Messer Cutting Systems Gmbh | Machine de découpe par plasma avec système de protection ainsi que procédé d'exploitation de la machine de découpe par plasma |
CN104135812A (zh) * | 2014-07-15 | 2014-11-05 | 华中科技大学 | 一种基于等离子体发光强度检测的射频离子源保护装置 |
US9526161B2 (en) | 2014-08-29 | 2016-12-20 | Shimadzu Corporation | High-frequency power supply device |
US9648719B2 (en) | 2014-09-03 | 2017-05-09 | Shimadzu Corporation | High-frequency power supply device |
CN115728002A (zh) * | 2022-09-07 | 2023-03-03 | 南京航空航天大学 | 一种基于电感耦合等离子体的真空玻璃真空度检测系统 |
CN117545162A (zh) * | 2023-11-08 | 2024-02-09 | 江苏神州半导体科技有限公司 | 一种远程等离子源的预激发点火装置及其控制方法 |
CN117545162B (zh) * | 2023-11-08 | 2024-05-28 | 江苏神州半导体科技有限公司 | 一种远程等离子源的预激发点火装置及其控制方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0568920B1 (fr) | 1996-03-27 |
DE69301952T2 (de) | 1996-08-08 |
JP3167221B2 (ja) | 2001-05-21 |
JPH0620793A (ja) | 1994-01-28 |
DE69301952D1 (de) | 1996-05-02 |
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