EP0271595A1 - On-chip voltage stabiliser - Google Patents
On-chip voltage stabiliser Download PDFInfo
- Publication number
- EP0271595A1 EP0271595A1 EP86117494A EP86117494A EP0271595A1 EP 0271595 A1 EP0271595 A1 EP 0271595A1 EP 86117494 A EP86117494 A EP 86117494A EP 86117494 A EP86117494 A EP 86117494A EP 0271595 A1 EP0271595 A1 EP 0271595A1
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- European Patent Office
- Prior art keywords
- transistor
- emitter
- circuit
- constant voltage
- transistors
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
Definitions
- the problem on which the invention is based is therefore to largely prevent the noise of the usual constant voltage sources by means of circuit measures so that audio channels are no longer audibly disturbed. Furthermore, it is to be achieved with the invention that several supply voltages and constant currents can be derived from the voltage of the constant voltage source, which serve to operate the individual chip subcircuits. The solution to this problem is given in the claims.
- the embodiment of the invention represented by its circuit diagram in FIG. 1 relates to the implementation by means of bipolar transistors of one and the same conductivity type, namely by means of npn transistors.
- npn transistors are used instead of npn transistors.
- MOS transistors instead of bipolar transistors and then to use either n-channel or p-channel transistors.
- the constant voltage source already mentioned is not indicated in the figures of the drawing, but only the line to which the constant voltage u of the constant voltage source is connected is shown. From this line, the resistor r belonging to the RC low pass leads to the base of the transistor t. In the manner of the known Darlington circuit, this is connected upstream of the emitter follower transistors te1, tem, the bases of which are common to the emitter of the transistor t and the collectors of which lie together with that of the transistor t to the constant voltage u, and one of the supply voltages v1 ... vm is to be removed; these are decoupled from one another.
- the base of the transistor t is also connected via the outer chip connection ca to the capacitor c belonging to the RC low-pass filter, the other end of which is at the outer Circuit zero is sn. This is connected via the further outer chip connection ca ⁇ to the inner circuit zero point sn ⁇ .
- the current mirror circuit s is also provided, with which the constant currents i1, iy are generated.
- the current mirror circuit s is also provided, with which the constant currents i1, iy are generated.
- it consists of the first transistor t1, the emitter of which is connected to the internal circuit zero point sn ⁇ via the first resistor r1 and the collector of which is connected to the output of the RC low-pass filter and the second resistor r2 at the base of the transistor t.
- the second transistor t2 is provided, the base of which is connected to the collector and the emitter of which is connected to the base of the first transistor t1 and the collector of which is connected to a point carrying a suitable voltage.
- This can be the constant voltage u above, for example, but also the emitter of the transistor t.
- the bases of the output transistors ta1, tay are the bases of the output transistors ta1, tay, whose emitters are located directly or via an emitter resistor re at the inner circuit zero point sn ⁇ .
- the circuit part containing the transistors t, te1, tem and the current mirror circuit are provided a second time.
- the circuit part contains the corresponding transistors t ⁇ , te1 ⁇ , tem ⁇ .
- the base of the transistor t ⁇ lies on the base of the transistor t.
- This expansion generates additional supply voltages v1 ⁇ , vm ⁇ , the opposite the supply voltages v1, vm are better decoupled from one another than these.
- Such an arrangement is particularly advantageous when two audio channels, for example stereo channels, are provided in the integrated circuit which are intended to influence one another as little as possible.
- the further current mirror circuit s ⁇ consists of the transistors t1 ⁇ , t2 ⁇ , ta1 ⁇ , tay ⁇ and the resistors r1 ⁇ , r2 ⁇ , re ⁇ . If necessary, further such partial and current mirror circuits can be provided. The number of each is freely selectable; that is, FIG. 2 with two subcircuits and two current mirror circuits shows only one possible embodiment.
- npn transistors In addition to the variants already mentioned above when realizing the invention using different transistor types, it is also possible to implement part of the circuit using npn transistors and the other part using pnp transistors. Likewise, n-channel and p-channel field effect transistors can be used mixed. This will apply in particular if the constant current source is not related to the circuit zero, that is to say acts as a current sink as in the exemplary embodiments in FIGS. 1 and 2, but rather, conversely, constant currents from the constant voltage u should be generated, which flow into further sub-circuits.
- the capacitance of the capacitor c will generally be between 2 and 20 micro-farads.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Zur weitgehenden Unterdrückung des Rauschens von integrierten Konstantspannungsquellen sieht die Erfindung einen RC-Tiefpaß vor, dessen Kondensator (c) über den äußeren Chipanschluß (ca) mit dem äußeren Schaltungsnullpunkt (sn) verbunden ist, während der Rest der Schaltung auf dem Chip angeordnet ist. Der Widerstand (r) des RC-Tiefpaßes liegt an der Konstantspannung (u) der Konstantspannungsquelle und der Ausgang des RC-Tiefpasses an der Basis eines Darlington-artig Emitterfolgern (te1...tem) vorgeschalteten Transistors (t), deren Emittern die Vorsorgungsspannungen (v1, vm) entnommen werden können. Ferner ist die vom Ausgang des RC-Tiefpasses über den Widerstand (r2) angesteuerte Konstantstromquelle (s) vorgesehen, die als Stromsenke für die Konstantströme (i1, iy) dient.To largely suppress the noise of integrated constant voltage sources, the invention provides an RC low-pass filter, the capacitor (c) of which is connected to the outer circuit zero (sn) via the outer chip connection (ca), while the rest of the circuit is arranged on the chip. The resistance (r) of the RC low-pass filter is due to the constant voltage (u) of the constant voltage source and the output of the RC low-pass filter is based on a transistor (t) upstream of a Darlington-like emitter follower (te1 ... tem), the emitters of which are the supply voltages (v1, vm) can be removed. Furthermore, the constant current source (s) controlled by the output of the RC low pass via the resistor (r2) is provided, which serves as a current sink for the constant currents (i1, iy).
Description
Üblicherweise werden in integrierten Schaltungen intern benötigte Versorgungsspannungen mittels einer mitintegrierten Konstantspannungsquelle gewonnen. Eine häufig verwendete derartige Konstantspannungsquelle ist die sogenannte Bandabstand-Referenzschaltung. Es hat sich jedoch gezeigt, daß in bestimmten Anwendungsfällen, wie z.B. bei Analog-Digital-Wandlern für hochwertige Audioanwendungen, das Rauschen der üblichen Konstantspannungsquellen in den Audiokanal gelangt und somit hörbar wird.Usually, internally required supply voltages are obtained in integrated circuits by means of an integrated constant voltage source. A frequently used constant voltage source of this type is the so-called bandgap reference circuit. However, it has been shown that in certain applications, e.g. With analog-digital converters for high-quality audio applications, the noise from the usual constant voltage sources reaches the audio channel and is therefore audible.
Das der Erfindung zugrundeliegende Problem besteht daher darin, mittels Schaltungsmaßnahmen das Rauschen der üblichen Konstantspannungsquellen so weitgehend zu unterbinden, daß Audiokanäle niche mehr hörbar gestört werden. Ferner soll mit der Erfindung erreicht werden, daß aus der Spannung der Konstantspannungsquelle mehrere Versorgungsspannungen und Konstantströme abgeleitet werden können, die zum Betrieb der einzelnen Chip-Teilschaltungen dienen. Die Lösung dieser Problemstellung ist in den Ansprüchen angegeben.The problem on which the invention is based is therefore to largely prevent the noise of the usual constant voltage sources by means of circuit measures so that audio channels are no longer audibly disturbed. Furthermore, it is to be achieved with the invention that several supply voltages and constant currents can be derived from the voltage of the constant voltage source, which serve to operate the individual chip subcircuits. The solution to this problem is given in the claims.
Die Erfindung wird nun anhand der Figuren der Zeichnung näher erläutert.
- Fig. 1 zeigt das Schaltbild eines Ausführungsbeispiels der Erfindung, und
- Fig. 2 zeigt eine Weiterbildung und eine Ausgestaltung der Erfindung.
- Fig. 1 shows the circuit diagram of an embodiment of the invention, and
- 2 shows a further development and an embodiment of the invention.
Das in Fig. 1 durch sein Schaltbild wiedergegebene Ausführungsbeispiel der Erfindung bezieht sich auf die Realisierung mittels bipolarer Transistoren ein und desselben Leitungstyps, nämlich mittels npn-Transistoren. Es liegt jedoch im Rahmen fachmännischer Abwandlung der Erfindung, wenn anstatt npn-Transistoren pnp-Transistoren verwendet werden. Es ist jedoch auch möglich, anstatt Bipolartransistoren MOS-Transistoren zu verwenden und dann entweder n-Kanal- oder p-Kanal-Transistoren einzusetzen.The embodiment of the invention represented by its circuit diagram in FIG. 1 relates to the implementation by means of bipolar transistors of one and the same conductivity type, namely by means of npn transistors. However, it is within the scope of a technical modification of the invention if pnp transistors are used instead of npn transistors. However, it is also possible to use MOS transistors instead of bipolar transistors and then to use either n-channel or p-channel transistors.
Die bereits erwähnte Konstantspannungsquelle ist in den Figuren der Zeichnung nicht angegeben, sondern es ist lediglich diejenige Leitung gezeichnet, an die die Konstantspannung u der Konstantspannungsquelle gelegt ist. Von dieser Leitung aus führt der zum RC-Tiefpaß gehörende Widerstand r zur Basis des Transistors t. Dieser ist nach Art der bekannten Darlington-Schaltung den Emitterfolgertransistoren te1, tem vorgeschaltet, deren Basen gemeinsam am Emitter des Transistors t und deren Kollektoren zusammen mit dem des Transistors t an der Konstantspannung u liegen und an deren Emittern jeweils eine der Vorsorgungsspannungen v1...vm abzunehmen ist; diese sind untereinander entkoppelt.The constant voltage source already mentioned is not indicated in the figures of the drawing, but only the line to which the constant voltage u of the constant voltage source is connected is shown. From this line, the resistor r belonging to the RC low pass leads to the base of the transistor t. In the manner of the known Darlington circuit, this is connected upstream of the emitter follower transistors te1, tem, the bases of which are common to the emitter of the transistor t and the collectors of which lie together with that of the transistor t to the constant voltage u, and one of the supply voltages v1 ... vm is to be removed; these are decoupled from one another.
Die Basis des Transistors t ist ferner über den äußeren Chipanschluß ca mit dem zum RC-Tiefpaß gehörenden Kondensator c verbunden, dessen anderes Ende am äußeren Schaltungsnullpunkt sn liegt. Dieser ist über den weiteren äußeren Chipanschluß caʹ am inneren Schaltungsnullpunkt snʹ angeschlossen.The base of the transistor t is also connected via the outer chip connection ca to the capacitor c belonging to the RC low-pass filter, the other end of which is at the outer Circuit zero is sn. This is connected via the further outer chip connection caʹ to the inner circuit zero point snʹ.
In Fig. 1 ist ferner die Stromspiegelschaltung s vorgesehen, mit der die Konstantströme i1, iy erzeugt werden. Hierzu besteht sie aus dem ersten Transistor t1, dessen Emitter über den ersten Widerstand r1 am inneren Schaltungsnullpunkt snʹ und dessen Kollektor über den zweiten Widerstand r2 am Ausgang des RC-Tiefpasses und somit auch an der Basis des Transistors t liegt.In Fig. 1, the current mirror circuit s is also provided, with which the constant currents i1, iy are generated. For this purpose, it consists of the first transistor t1, the emitter of which is connected to the internal circuit zero point snʹ via the first resistor r1 and the collector of which is connected to the output of the RC low-pass filter and the second resistor r2 at the base of the transistor t.
Ferner ist der zweite Transistor t2 vorgesehen, dessen Basis am Kollektor und dessen Emitter an der Basis des ersten Transistors t1 sowie dessen Kollektor an einem eine geeignete Spannung führenden Punkt angeschlossen ist. Dies kann beispielsweise die Konstantspannung u ober aber auch der Emitter des Transistors t sein. Schließlich liegen an der Basis des Transistors t1 die Basen der Ausgangstransistoren ta1, tay, deren Emitter direkt oder über jeweils einen Emitterwiderstand re am inneren Schaltungsnullpunkt snʹ liegen.Furthermore, the second transistor t2 is provided, the base of which is connected to the collector and the emitter of which is connected to the base of the first transistor t1 and the collector of which is connected to a point carrying a suitable voltage. This can be the constant voltage u above, for example, but also the emitter of the transistor t. Finally, at the base of the transistor t1 are the bases of the output transistors ta1, tay, whose emitters are located directly or via an emitter resistor re at the inner circuit zero point snʹ.
In der Weiterbildung nach Fig. 2 sind der die Transistoren t, te1, tem enthaltende Schaltungsteil sowie die Stromspiegelschaltung ein zweites Mal vorgesehen. Der Schaltungsteil enthält die entsprechenden Transistoren tʹ, te1ʹ, temʹ. Dabei liegt die Basis des Transistors tʹ an der Basis des Transistors t. Durch diese Erweiterung werden weitere Versorgungsspannungen v1ʹ, vmʹ erzeugt, die gegenüber den Versorgungsspannungen v1, vm besser entkoppelt sind als diese untereinander. Eine derartige Anordnung ist insbesondere dann vorteilhaft, wenn in der integrierten Schaltung zwei Audiokanäle, z.B. Stereokanäle, vorgesehen sind, die sich möglichst wenig gegenseitig beeinflussen sollen. Die weitere Stromspiegelschaltung sʹ besteht aus den Transistoren t1ʹ, t2ʹ, ta1ʹ, tayʹ und den Widerständen r1ʹ, r2ʹ, reʹ. Nach Bedarf können noch weitere derartige Teil- und Stromspiegelschaltungen vorgesehen werden. Dabei ist deren jeweilige Anzahl frei wählbar; d.h. die Fig. 2 mit zwei Teilschaltungen und zwei Stromspiegelschaltungen zeigt lediglich ein mögliches Ausführungsbeispiel.In the development according to FIG. 2, the circuit part containing the transistors t, te1, tem and the current mirror circuit are provided a second time. The circuit part contains the corresponding transistors tʹ, te1ʹ, temʹ. The base of the transistor tʹ lies on the base of the transistor t. This expansion generates additional supply voltages v1ʹ, vmʹ, the opposite the supply voltages v1, vm are better decoupled from one another than these. Such an arrangement is particularly advantageous when two audio channels, for example stereo channels, are provided in the integrated circuit which are intended to influence one another as little as possible. The further current mirror circuit sʹ consists of the transistors t1ʹ, t2ʹ, ta1ʹ, tayʹ and the resistors r1ʹ, r2ʹ, reʹ. If necessary, further such partial and current mirror circuits can be provided. The number of each is freely selectable; that is, FIG. 2 with two subcircuits and two current mirror circuits shows only one possible embodiment.
In Fig. 2 ist schließlich die bereits erwähnte Ausgestaltung eingezeichnet, bei der der Kollektor des Transistors t2 der Konstantstromquelle s am Emitter des Transistors t liegt.Finally, the already mentioned embodiment is shown in FIG. 2, in which the collector of the transistor t2 of the constant current source s is connected to the emitter of the transistor t.
Zusätzlich zu den bereits oben erwähnten Varianten bei der Realisierung der Erfindung mittels verschiedener Transistortypen ist es auch möglich, einen Teil der Schaltung mittels npn-, den anderen Teil jedoch mittels pnp-Transistoren zu realisieren. Ebenso können n-Kanal- und p-Kanal-Feldeffekttransistoren gemischt verwendet werden. Dies wird insbesondere dann zutreffen, wenn die Konstantstromquelle nicht schaltungsnullpunktbezogen sein, also wie in den Ausführungsbeispielen der Fig. 1 und 2 als Stromsenke wirken soll, sondern gerade umgekehrt aus der Konstantspannung u konstante Ströme erzeugt werden sollen, die in weitere Teilschaltungen fließen.In addition to the variants already mentioned above when realizing the invention using different transistor types, it is also possible to implement part of the circuit using npn transistors and the other part using pnp transistors. Likewise, n-channel and p-channel field effect transistors can be used mixed. This will apply in particular if the constant current source is not related to the circuit zero, that is to say acts as a current sink as in the exemplary embodiments in FIGS. 1 and 2, but rather, conversely, constant currents from the constant voltage u should be generated, which flow into further sub-circuits.
Für die Bemessung des RC-Tiefpasses ist es vorteilhaft, wenn seine Grenzfrequenz unterhalb 50 Hz liegt, was bedeutet, daß die Kapazität des Kondensators c im allgemeinen zwischen 2 und 20 Mikro-Farad liegen wird.For the dimensioning of the RC low-pass filter, it is advantageous if its cut-off frequency is below 50 Hz, which means that the capacitance of the capacitor c will generally be between 2 and 20 micro-farads.
Claims (5)
- mit einer Konstantspannungsquelle,
- mit nach Art eines Emitterfolgers betriebenen Transistoren (= Emitterfolgertransistoren) (te1, tem), die aus deren Konstantspannung (u) Versorgungsspannungen (v1, vm; v1ʹ, vmʹ) für Chip-Teilschaltungen ableiten,
- mit einer auf die Konstantspannung (u) bezogenen Stromspiegelschaltung (s), die Konstantströme (i1, iy) zur Speisung von Chip-Teilschaltungen abgibt, und
- mit einem RC-Tiefpaß, dessen Widerstand (r) zwischen dem Ausgang der Konstantspannungsquelle (u) und der Steuerelektrode eines den Emitterfolgertransistoren in Darlington-artig vorgeschalteten Transistors (t) liegt und dessen Kondensator (c) von dieser Steuerelektrode über einen äußeren Chip-Anschluß (ca) zum äußeren Schaltungsnullpunkt (sn) führt.1. On-chip voltage stabilization circuit
- with a constant voltage source,
with transistors operated in the manner of an emitter follower (= emitter follower transistors) (te1, tem), which derive supply voltages (v1, vm; v1ʹ, vmʹ) for chip subcircuits from their constant voltage (u),
- With a current mirror circuit (s) related to the constant voltage (u), which outputs constant currents (i1, iy) for supplying chip subcircuits, and
- With an RC low-pass filter, the resistance (r) of which lies between the output of the constant voltage source (u) and the control electrode of a transistor (t) connected upstream of the emitter follower transistors in Darlington-type and whose capacitor (c) is connected to this control electrode via an external chip. Connection (ca) leads to the outer circuit zero (sn).
- einem ersten Transistor (t1), dessen Emitter über einen ersten Widerstand (r1) am inneren Schaltungsnullpunkt (snʹ) und dessen Kollektor über einen zweiten Widerstand (r2) am Ausgang des RC-Tiefpasses liegt,
- einem zweiten Transistor (t2), dessen Basis am Kollektor und dessen Emitter an der Basis des ersten Transistors (t1) sowie dessen Kollektor an einem eine geeignete Spannung führenden Punkt, insbesondere am Emitter eines der Emitterfolgertransistoren (t, tʹ), liegt, und
- Ausgangstransistoren (ta1, tay), deren Basen an der Basis des ersten Transistors (t1) sowie deren Emitter direkt oder über jeweils einen Emitterwiderstand (re) am inneren Schaltungsnullpunkt (snʹ) liegen und an deren Kollektoren die Konstantströme (i1, iy) abzugreifen sind.4. Bipolar circuit according to one of claims 1 to 3 with a current mirror circuit (s)
a first transistor (t1) whose emitter is connected to the inner circuit zero point (snʹ) via a first resistor (r1) and whose collector is connected to the output of the RC low-pass filter via a second resistor (r2),
- A second transistor (t2), the base of which is at the collector and the emitter of which is at the base of the first transistor (t1) and the collector of which is at a suitable voltage-carrying point, in particular at the emitter of one of the emitter follower transistors (t, tʹ), and
- Output transistors (ta1, tay), the bases of which are located at the base of the first transistor (t1) and the emitters of which are located directly or via an emitter resistor (re) at the inner circuit zero point (sn und) and the constant currents (i1, iy) can be tapped from their collectors are.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP86117494A EP0271595A1 (en) | 1986-12-16 | 1986-12-16 | On-chip voltage stabiliser |
| US07/125,900 US4775829A (en) | 1986-12-16 | 1987-11-27 | On-chip voltage stabilizing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP86117494A EP0271595A1 (en) | 1986-12-16 | 1986-12-16 | On-chip voltage stabiliser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP0271595A1 true EP0271595A1 (en) | 1988-06-22 |
Family
ID=8195650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP86117494A Withdrawn EP0271595A1 (en) | 1986-12-16 | 1986-12-16 | On-chip voltage stabiliser |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4775829A (en) |
| EP (1) | EP0271595A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3835378A1 (en) * | 1988-10-18 | 1990-04-19 | Telefunken Electronic Gmbh | RC LOW-PASS CONTROL |
| JP2894776B2 (en) * | 1990-03-02 | 1999-05-24 | 日本電気株式会社 | Semiconductor integrated circuit |
| US5420499A (en) * | 1994-03-02 | 1995-05-30 | Deshazo; Thomas R. | Current rise and fall time limited voltage follower |
| US5999039A (en) * | 1996-09-30 | 1999-12-07 | Advanced Micro Devices, Inc. | Active power supply filter |
| CA2303543A1 (en) * | 2000-03-30 | 2001-09-30 | Nortel Networks Corporation | Voltage reference source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2427233A1 (en) * | 1973-06-06 | 1975-05-07 | Sanyo Electric Co | NOISE REDUCTION DEVICE |
| EP0125646A1 (en) * | 1983-05-12 | 1984-11-21 | CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. | A biasing circuit for multifunction bipolar integrated circuits |
| US4565959A (en) * | 1981-10-30 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Current supply circuit with redundant back-up current source |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2995697A (en) * | 1957-02-18 | 1961-08-08 | Bell Telephone Labor Inc | Transistor filter |
| US4176308A (en) * | 1977-09-21 | 1979-11-27 | National Semiconductor Corporation | Voltage regulator and current regulator |
| US4349778A (en) * | 1981-05-11 | 1982-09-14 | Motorola, Inc. | Band-gap voltage reference having an improved current mirror circuit |
| DD215190A1 (en) * | 1983-04-18 | 1984-10-31 | Halbleiterwerk Frankfurt Oder | INTEGRATED CONSTANT VOLTAGE SOURCE |
| JPH112009A (en) * | 1997-04-14 | 1999-01-06 | Sekisui Chem Co Ltd | Eaves gutter joint |
-
1986
- 1986-12-16 EP EP86117494A patent/EP0271595A1/en not_active Withdrawn
-
1987
- 1987-11-27 US US07/125,900 patent/US4775829A/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2427233A1 (en) * | 1973-06-06 | 1975-05-07 | Sanyo Electric Co | NOISE REDUCTION DEVICE |
| US4565959A (en) * | 1981-10-30 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Current supply circuit with redundant back-up current source |
| EP0125646A1 (en) * | 1983-05-12 | 1984-11-21 | CSELT Centro Studi e Laboratori Telecomunicazioni S.p.A. | A biasing circuit for multifunction bipolar integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| US4775829A (en) | 1988-10-04 |
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Inventor name: ACHTSTAETTER, GERHARD, DIPL.-ING. (FH) |