DE4237693A1 - Method of manufacturing a photoelectromechanical cell - Google Patents
Method of manufacturing a photoelectromechanical cellInfo
- Publication number
- DE4237693A1 DE4237693A1 DE19924237693 DE4237693A DE4237693A1 DE 4237693 A1 DE4237693 A1 DE 4237693A1 DE 19924237693 DE19924237693 DE 19924237693 DE 4237693 A DE4237693 A DE 4237693A DE 4237693 A1 DE4237693 A1 DE 4237693A1
- Authority
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- Germany
- Prior art keywords
- suspension
- layer
- electrode
- tio
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000725 suspension Substances 0.000 claims abstract description 17
- 238000001962 electrophoresis Methods 0.000 claims abstract description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 5
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000000975 dye Substances 0.000 claims description 3
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 2
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 239000000375 suspending agent Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
Description
Die Erfindung bezieht sich auf ein Verfahren zur Herstel lung einer photoelektrochemischen Zelle gemäß dem Oberbe griff des Patentanspruches 1.The invention relates to a method of manufacture a photoelectrochemical cell according to the Oberbe handle of claim 1.
Aus der EP 0 333 641 A1 ist es bekannt, daß Halbleiterelek trolytgrenzschichten photoelektrochemische Eigenschaften zeigen, die jenen der Schottky-Barrieren von Halblei ter/Metall-Grenzschichten ähnlich sind. Halbleiter mit geringem energetischen Abstand zwischen Leitungs- und Valenzband, bei denen die Ladungsträger des Halbleiters selbst mit Licht photoelektrisch angeregt werden, wie bei spielsweise bei Silizium, Gallium-Arsenid und Kadmium sulfid, werden unter Lichtbestrahlung bei der Verwendung von Elektrolyten photokorrosiv zersetzt. Die photochemische Ausbeute des sichtbares Lichts, insbesondere des Sonnen lichts, durch Halbleiter mit großem Bandabstand kann erhöht werden, indem auf die Oberfläche dieser Halbleiter Chromophore, auch Sensibilisatoren oder Dyes genannt, che misch an- oder eingelagert werden. Die beiden Funktionen der Lichtabsorption und der Ladungsträgertrennung sind bei diesen photoelektrochemischen Systemen getrennt. Die Licht absorption wird vom Chromophor im Oberflächenbereich über nommen und die Trennung der Ladungsträger erfolgt an der Grenzschicht Halbleiter/Chromophor. Als Elektrolyte für solche photoelektrochemischen Zellen sind Lösungen von Jodid, Bromid oder Hydrochinon oder andere Redoxsysteme geeignet. Als Elektrode werden Metalloxidhalbleiter verwendet. Hierfür sind besonders die Oxide der Über gangsmetalle sowie die Elemente der dritten Hauptgruppe und der vierten, fünften und sechsten Nebengruppe des Perioden systems der Elemente wie Titan, Zirkon, Hafnium, Strontium, Zink, Indium, Yttrium, Lanthan, Vanadium, Niob, Tantal, Chrom, Molybdän, Wolfram aber auch Oxide von Zink, Eisen, Nickel oder Silber, Perowskite oder Oxide von anderen Me tallen der zweiten und dritten Hauptgruppe oder Mischoxide oder Oxidgemische dieser Metalle geeignet. Die Verwendung von Titandioxid als Elektrode hat sich als vorteilhaft er wiesen.From EP 0 333 641 A1 it is known that semiconductor elec trolyte boundary layers photoelectrochemical properties show that of the Schottky barriers from Halblei ter / metal boundary layers are similar. Semiconductors with low energetic distance between line and Valence band at which the charge carriers of the semiconductor can be photoelectrically excited even with light, as in for example with silicon, gallium arsenide and cadmium sulfide, are exposed to light when in use decomposed photocorrosively by electrolytes. The photochemical Yield of visible light, especially sun light, can be increased by semiconductors with a large band gap be by putting on the surface of these semiconductors Chromophores, also called sensitizers or dyes, che can be mixed or stored. The two functions the light absorption and the charge carrier separation are at these photoelectrochemical systems separately. The light absorption is from the chromophore in the surface area take and the separation of the charge carriers takes place at the Boundary layer semiconductor / chromophore. As electrolytes for such photoelectrochemical cells are solutions of Iodide, bromide or hydroquinone or other redox systems suitable. Metal oxide semiconductors are used as electrodes used. The oxides are particularly important for this transition metals and the elements of the third main group and the fourth, fifth and sixth subgroup of the periods systems of elements such as titanium, zircon, hafnium, strontium, Zinc, indium, yttrium, lanthanum, vanadium, niobium, tantalum, Chromium, molybdenum, tungsten but also oxides of zinc, iron, Nickel or silver, perovskite or oxides from other me tallen the second and third main group or mixed oxides or oxide mixtures of these metals. The usage of titanium dioxide as an electrode has been found to be advantageous grasslands.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren aufzuzeigen, mit dem die Ausbildung einer Zelle mit einer Elektrode aus TiO2 schnell und zudem so durchgeführt werden kann, daß das Elektrodenmaterial die größtmöglich Porosität aufweist.The invention has for its object to provide a method with which the formation of a cell with an electrode made of TiO 2 can be carried out quickly and also so that the electrode material has the greatest possible porosity.
Diese Aufgabe wird durch die Merkmale des Patentanspru ches 1 gelöst.This object is achieved by the features of claim ches 1 solved.
Mit dem erfindungsgemäßen Verfahren ist es möglich, die Po rosität der Elektrode so groß auszubilden, daß ihre wirk same Oberfläche um einen Faktor 700 gegenüber bekannten Zellen mit gleichen Abmessungen vergrößert ist. Hierdurch wird eine photoelektrochemische Zelle zur Verfügung ge stellt, deren Wirkungsgrad größer als 7% ist. Das Abschei den des Titandioxids mittels Elektrophorese hat den weiteren Vorteil, daß hierdurch sehr gleichmäßige Elektrodenschichten mit kleiner Korngröße ausgebildet werden. Dieses wird durch die Verwendung einer feinen und homogenen Suspensionen erreicht. Die Dicke der zu bildenden Elektrodenschicht kann durch die Variation des Feststoffge halts auf einen definierten Wert eingestellt werden. Die Abscheidungsgeschwindigkeit, mit der das TiO2 aufgetragen wird, kann durch die Variation der Spannung, die zur Durch führung der Elektrophorese angelegt wird, ebenfalls fest eingestellt werden. Bei der Abscheidung von Materialien mittels Elektrophorese werden normalerweise glatte, wenig poröse Schichten ausgebildet. Durch eine geeignete Wahl der Zusammensetzung der verwendeten Suspension kann eine hoch poröse homogene Titandioxidschicht abgeschieden werden. Durch die Verwendung dieser feinen deagglomerierten Suspension besitzt die Titandioxidschicht eine dichte Teilchenpackung und eine homogene Porenverteilung, welche die Voraussetzung auch für eine hohe spezifische Oberfläche und eine rißfreie Trocknung auch dickerer Schichten ist.With the method according to the invention, it is possible to make the electrode so large that its effective surface is increased by a factor of 700 compared to known cells with the same dimensions. As a result, a photoelectrochemical cell is available whose efficiency is greater than 7%. The deposition of the titanium dioxide by means of electrophoresis has the further advantage that very uniform electrode layers with a small grain size are thereby formed. This is achieved through the use of fine and homogeneous suspensions. The thickness of the electrode layer to be formed can be set to a defined value by varying the solids content. The deposition rate with which the TiO 2 is applied can also be fixed by varying the voltage applied to carry out the electrophoresis. When depositing materials by means of electrophoresis, usually smooth, less porous layers are formed. A highly porous, homogeneous titanium dioxide layer can be deposited by a suitable choice of the composition of the suspension used. Through the use of this fine deagglomerated suspension, the titanium dioxide layer has a dense particle packing and a homogeneous pore distribution, which is also the prerequisite for a high specific surface and crack-free drying of thicker layers.
Die Erfindung wird nachfolgend anhand einer schematischen Zeichnung erläutert.The invention is described below using a schematic Drawing explained.
Die einzige zur Beschreibung gehörende Figur zeigt einen Längsschnitt durch eine photoelektrochemische Zelle 1. Wie anhand der Figur zu sehen ist, ist die Zelle 1 aus mehreren Schichten 2, 3, 4, 5, 6, 7 und 8 aufgebaut. Der Kern der Zelle 1 wird durch die als Elektrode dienende Schicht 4, die Dyeschicht 5, und die Elektrolytschicht 6 gebildet. Erfindungsgemäß ist die Elektrodenschicht 4 porös ausgebil det und aus TiO2 gefertigt. Sie wird auf die aus leit fähigem Glas gefertigte Schicht 2 aufgetragen. Erfindungs gemäß erfolgt die Abscheidung des Titandioxids, das die Elektrode 4 bildet, mittels Elektrophorese. Hierfür wird eine Suspension ausgebildet, für die pulverförmiges Titan dioxid mit einer Korngröße von 5 bis 50 nm verwendet wird. Als Suspensionsmittel wird ein Alkohol, z. B. in Form von Isopropanol verwendet. Als Dispersionsmittel werden 0,1 bis 2 Gew. -% p-Hydroxybenzoesäure in dem Alkohol gelöst. Diesem werden 5 bis 50 Gew. -% pulverförmiges Titandioxid beige mischt, wobei sich die Gewichtsmenge auf das Gesamtgewicht der Suspension bezieht. Als Bindemittel werden 1 bis 20 Gew. -% Polyethylenoxid, Polyvinylalkohol, Polyacrylat oder substituierte Oligoethylenglycolmonophenylether zuge setzt, wobei sich die Gewichtsmenge auf das Gesamtgewicht des verwendeten Titandioxids bezieht. Die Mischung wird zwei bis zwanzig Minuten lang mit Ultraschall behandelt. Hierdurch wird eine feine, homogene und elektrostatisch stabile Suspension gebildet. Die aus leitfähigem Glas ge fertigte Schicht 2 wird nun gründlich mit Ultraschall gereinigt und zusammen mit einer Gegenelektrode aus Platin (hier nicht dargestellt) in der gebildeten Suspension (hier nicht dargestellt) angeordnet. Zwischen die beiden Elektro den wird eine Spannung von 1 bis 100 V gelegt, so daß ein Strom in der Größenordnung von 10 und 500 µA fließt. Nach einer Abscheidedauer von 2 bis 200 Sekunden wird die Schicht 2 aus der Suspension entfernt und zusammen mit der auf ihr abgeschiedenen TiO2-Schicht 4 bei 500°C eine Stunde lang gesintert. Die Dicke der ausgebildeten TiO2-Schicht beträgt 5 bis 20 µm. Sie weist eine spezifische Oberfläche von mindestens 30m2/g auf. Nach dem Sintern kann die Zelle 1 fertiggestellt werden. Hierfür wird die Zelle mit einer Farbstoffschicht 5 versehen. An diese Schicht 5 schließt sich die Schicht 6 an, die durch einen flüssigen Elektro lyten gebildet wird. Diese beiden Schichten 5 und 6 werden aus einem der bekannten und eingangs erwähnten Werkstoffe gefertigt. Die Schicht 6 wird ebenfalls durch eine elek trisch leitende Glasschicht 8 begrenzt. An die beiden Glas schichten 2 und 3 schließen sich jeweils transparente Isolierschichten 7 und 8 an.The only figure belonging to the description shows a longitudinal section through a photoelectrochemical cell 1 . As can be seen from the figure, the cell 1 is composed of several layers 2 , 3 , 4 , 5 , 6 , 7 and 8 . The core of the cell 1 is formed by the layer 4 serving as an electrode, the thy layer 5 and the electrolyte layer 6 . According to the invention, the electrode layer 4 is porous and is made of TiO 2 . It is applied to the layer 2 made of conductive glass. According to the invention, the titanium dioxide, which forms the electrode 4, is deposited by means of electrophoresis. A suspension is formed for this purpose, for which powdered titanium dioxide with a grain size of 5 to 50 nm is used. An alcohol, e.g. B. used in the form of isopropanol. 0.1 to 2% by weight of p-hydroxybenzoic acid are dissolved in the alcohol as the dispersing agent. 5 to 50% by weight of powdered titanium dioxide are mixed into this, the amount by weight being based on the total weight of the suspension. 1 to 20% by weight of polyethylene oxide, polyvinyl alcohol, polyacrylate or substituted oligoethylene glycol monophenyl ether are added as binders, the amount by weight based on the total weight of the titanium dioxide used. The mixture is sonicated for two to twenty minutes. This creates a fine, homogeneous and electrostatically stable suspension. The layer 2 made of conductive glass is now thoroughly cleaned with ultrasound and arranged together with a counter electrode made of platinum (not shown here) in the suspension formed (not shown here). A voltage of 1 to 100 V is applied between the two electrodes, so that a current of the order of 10 and 500 μA flows. After a deposition time of 2 to 200 seconds, layer 2 is removed from the suspension and sintered together with the TiO 2 layer 4 deposited on it at 500 ° C. for one hour. The thickness of the TiO 2 layer formed is 5 to 20 μm. It has a specific surface area of at least 30m 2 / g. After sintering, cell 1 can be completed. For this, the cell is provided with a dye layer 5 . This layer 5 is followed by layer 6 , which is formed by a liquid electrolyte. These two layers 5 and 6 are made from one of the known materials mentioned at the outset. The layer 6 is also limited by an electrically conductive glass layer 8 . At the two glass layers 2 and 3, transparent insulating layers 7 and 8 follow each.
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19924237693 DE4237693A1 (en) | 1992-11-07 | 1992-11-07 | Method of manufacturing a photoelectromechanical cell |
PCT/EP1993/003100 WO1994011916A1 (en) | 1992-11-07 | 1993-11-05 | Method of manufacturing a photoelectrochemical cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19924237693 DE4237693A1 (en) | 1992-11-07 | 1992-11-07 | Method of manufacturing a photoelectromechanical cell |
Publications (1)
Publication Number | Publication Date |
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DE4237693A1 true DE4237693A1 (en) | 1994-05-11 |
Family
ID=6472380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE19924237693 Withdrawn DE4237693A1 (en) | 1992-11-07 | 1992-11-07 | Method of manufacturing a photoelectromechanical cell |
Country Status (2)
Country | Link |
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DE (1) | DE4237693A1 (en) |
WO (1) | WO1994011916A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19810528A1 (en) * | 1998-03-11 | 1999-09-16 | Fraunhofer Ges Forschung | Production of layers containing porous titanium oxide on carriers |
EP1648006A1 (en) * | 2004-10-15 | 2006-04-19 | Riser Energy Limited | A hybrid matrix composition, a photoelectric cell, an electrical device and a method of manufacturing a hybrid matrix composition |
DE102013217856A1 (en) * | 2013-09-06 | 2015-03-12 | Osram Opto Semiconductors Gmbh | Separation of particles |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100417749C (en) * | 2005-09-27 | 2008-09-10 | 清华大学 | Titanium dioxide nano material film and preparation method thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH674596A5 (en) * | 1988-02-12 | 1990-06-15 | Sulzer Ag |
-
1992
- 1992-11-07 DE DE19924237693 patent/DE4237693A1/en not_active Withdrawn
-
1993
- 1993-11-05 WO PCT/EP1993/003100 patent/WO1994011916A1/en active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19810528A1 (en) * | 1998-03-11 | 1999-09-16 | Fraunhofer Ges Forschung | Production of layers containing porous titanium oxide on carriers |
DE19810528C2 (en) * | 1998-03-11 | 2002-02-07 | Fraunhofer Ges Forschung | Process for the production of porous layers containing TiO¶2¶ on supports by means of electrophoresis and use of the supports coated with TiO¶2¶ |
EP1648006A1 (en) * | 2004-10-15 | 2006-04-19 | Riser Energy Limited | A hybrid matrix composition, a photoelectric cell, an electrical device and a method of manufacturing a hybrid matrix composition |
DE102013217856A1 (en) * | 2013-09-06 | 2015-03-12 | Osram Opto Semiconductors Gmbh | Separation of particles |
Also Published As
Publication number | Publication date |
---|---|
WO1994011916A1 (en) | 1994-05-26 |
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