DE102015105438A1 - Monolithic diode laser arrangement - Google Patents

Abstract

The invention relates to a monolithic diode laser arrangement (100), comprising a plurality of individual emitters (101) arranged side by side on a common carrier substrate, each having contact windows (19, 20) for electrical contacting, which are connected to the respective individual emitters (101) on a carrier substrate are arranged opposite front. The invention further relates to a method for producing such a diode laser arrangement and to a laser apparatus with such a diode laser arrangement.

Description

The invention relates to a monolithic diode laser array, a method for producing such a monolithic diode laser array and a laser device with such a monolithic diode laser array.

Diode laser arrays or diode laser arrays for diode lasers with high power densities find a variety of applications in a variety of fields, such as the optical pumping of solid-state, fiber and disk lasers, direct material processing or medical therapy or diagnostics.

The optical power required in these applications typically can not be provided by a single laser diode or by a single emitter. It is therefore customary to connect a plurality of individual emitters in a diode laser arrangement electrically in parallel or in series.

Typically, the known, the series connection of individual emitters related diode laser arrays of a plurality of spatially separated individual emitters are constructed, which are subsequently connected in series. In this respect, such components do not have a monolithic structure. This results in a comparatively complicated optical adjustment, which must be done individually for each individual emitter. In addition, the individual emitters usually have to be applied to separate heat sinks. The number of individual emitters interconnected in the diode laser arrangement is usually in the range of less than twenty pieces. An advantage of such embodiments is the operating current of the diode laser array, which corresponds to the operating current of the individual single emitter, regardless of the number of individual emitters in the arrangement. The voltage applied to the diode laser arrangement having the series connection corresponds to the sum of the voltages applied to the individual emitters.

In the case of diode laser arrangements which have parallel-connected individual emitters, monolithic designs, so-called diode laser arrays or ingots, are known in which the electrical contacting takes place on opposite sides of the individual emitter. Such monolithic structures allow for simpler optical assembly, since only a single optic per Kollimationsrichtung is required for the entire diode laser array. An essential disadvantage of the diode laser arrangement having the parallel connection of individual emitters is the large currents necessary for the operation, which corresponds to the sum of the currents flowing through the respective individual emitters.

Based on this prior art, it is an object of the present invention to provide an improved diode laser arrangement in which the aforementioned disadvantages are largely avoided. It is another object of the invention to provide a method for producing such an improved diode laser array.

With regard to the device, the object is achieved by a diode laser arrangement of the aforementioned type with the further features of patent claim 1 or by a laser diode device having such a diode laser arrangement according to claim 21.

With regard to the method, the object is achieved by a method for producing a monolithic diode laser arrangement of the aforementioned type with the further features of patent claim 8.

Advantageous embodiments of the invention are the subject of the dependent claims.

A monolithic diode laser arrangement comprises a multiplicity of individual emitters arranged next to one another on a common carrier substrate, each of which has contact windows for electrical contacting, which are arranged on the respective individual emitters on a front side opposite the carrier substrate.

The monolithic, ie substantially one-piece construction of the diode laser arrangement results from a separation process of a spatially coherent structure which determines the arrangement of the individual emitters on the carrier substrate. This spatially coherent structure is formed by a wafer stack having a corresponding layer structure, which is then separated by scribing and splitting, that is to say subdivided into the individual diode laser arrays.

The diode laser array according to the invention can thus be manufactured inexpensively in large quantities. In addition, the arrangement of the individual emitter on the common carrier substrate allows a simplified optical assembly, since the entire diode laser array only one optic per Kollimationsrichtung is needed. At the same time, the arrangement of the contact windows provided for electrical contacting on the front side opposite the carrier substrate makes it possible in a particularly advantageous manner to connect the individual emitters in series. The operating current flowing through the entire diode laser array thus corresponds to the operating current flowing through each of the individual emitters, so that a limitation of the Diode laser arrangement with respect to the number of provided for generating the laser light single emitter is eliminated. As a result, particularly powerful diode laser arrays can be provided thereby. For cooling the entire diode laser arrangement, preferably only one heat sink is provided in order to minimize the assembly effort.

In preferred embodiments, the individual emitters of the monolithic diode laser arrangement are connected to the carrier substrate indirectly via a bonding plane arranged therebetween. Such embodiments are particularly advantageous in terms of their production, since two layered layer structures can be connected to each other by means of the bonding layer, which can be adapted before bonding with respect to their layer thicknesses selectively to the specific requirements of the diode laser array to be produced. The bonding plane consists, for example, of materials such as gold, aluminum, germanium, tin, a photosensitive epoxy resin, benzocyclobutene (BCB), a polyimide and / or a spin-on-glass (SOG).

Since according to possible embodiments of the invention, particularly electrically conductive materials for bonding can be used, an insulating layer between the individual emitters and the bonding layer is preferably arranged, which thus provides a backside electrical insulation of the individual emitter. The interconnection of the individual emitter via the front side arranged contact window.

Particularly preferably, the contact windows of the individual emitters are connected by means of metallic coatings in such a way that the individual emitters are electrically connected to one another in series. The application of this metallic coating takes place at the wafer level in a single production step, ie before the separation of the spatially coherent structure defining the arrangement of the individual emitters on the carrier substrate. Additional Drahtbondprozesse on the back, so on the side of the carrier substrate are superfluous.

To generate the laser light, each individual emitter has a recombination zone which is located between a p-type and an n-doped region of a multilayered epistructure of the respective single emitter. This epistemic structure is a multilayer epitaxial layer structure deposited on an episubstrate. According to particularly preferred exemplary embodiments, the episubstrate is not completely covered by the epistar structure, so that the episubstrate can also be electrically contacted by means of a front-side contact window.

As Episubstrat is preferably a III-V semiconductor material, in particular GaAs, InP or GaSb provided, which has a n-doping in a particularly advantageous manner.

The epistemic structure preferably comprises at least one p-doped cladding layer and at least one n-doped cladding layer. In a specific exemplary embodiment of the invention, the epitaxial layers applied as an epistrain to the episubstrate comprise the sequence of an n-doped cladding layer, an n-side waveguide layer, a quantum well structure, a p-side waveguide structure, a p-doped cladding layer and a p-doped contact layer. The recombination processes producing the laser light in this preferred embodiment take place in the quantum well structure, which is formed, for example, by a layer containing InGaAs, InGaAsP, GaInSb and / or GaInAsSb. The doped cladding layers and / or the waveguide layers are made of AlGaAs, InGaAsP, AlGaAsSb according to possible embodiments. According to possible embodiments, the p-doped contact layer consists of GaAs, GaSb, InP and / or InGaAs.

For electrically contacting the p-doped cladding layer, a p-contact window is preferably arranged on the front side of the epistar structure. Accordingly, the electrical contacting of the n-doped cladding layer takes place via an n-contact window, which is arranged on the front side on the episubstrate in the region in which the episubstrate is not covered by the epistar structure.

Preferably, one of the p-contact windows of at least one of the individual emitter is electrically conductively connected to the n-contact window of the individual emitter adjacent to the at least one individual emitter by means of the metallic coatings. The metallic coatings thus ensure the interconnection of the individual emitters in series, the electrically conductive connections provided for current flow being arranged exclusively on the front side of the diode laser arrangement.

In a method for producing a monolithic diode laser arrangement as described above, the spatially connected structure, which determines the formation of the arrangement of the individual emitters on the carrier substrate, takes place in a structuring step on the wafer level. In the patterning step, the individual structures assigned to the individual emitters are thus formed from a multilayer base carrier comprising a carrier substrate. The formation of the individual structures in the structuring step takes place in such a way that they are not detached from the carrier substrate or from the carrier substrate layer. The the carrier substrate opposite front sides of the individual structures are provided for the formation of contact windows.

After the singulation of the structured wafer stack, ie after the separation of the spatially coherent structure determining the arrangement of the individual emitters on the carrier substrate, the carrier layer forms the carrier substrate of the diode laser arrangement. Correspondingly, the individual emitters assigned to the individual emitters after singulation form the individual emitters for generating the laser light.

In one of the above-mentioned preferred embodiments, the single emitter comprises an epitaxial structure containing the recombination zone, which is applied to an episubstrate. Correspondingly, the multilayer base carrier provided for structuring comprises at least one epistemic layer, an episubstrate layer and the carrier substrate layer, which are applied to a carrier plate, which gives the base carrier the necessary mechanical stability during the production process.

In the structuring step, the epitaxial layer and the episubstrate layer of the base carrier are removed in sections to form the individual structures. This is typically done by means of an etching, also called separation etching, in which a plurality of individual structures arranged on the carrier substrate layer are formed, without these being detached from the carrier substrate layer. The individual structures each comprise epistropic structures arranged on episubstrate.

Preferably, in the structuring step, a so-called strip etching is additionally performed, in which contact strips for current injection are introduced into the epistrukturschicht. The contact strip can be formed, for example, as a raised area in the middle of the epistar structure.

In a preferred manner, the epistructure layer is further removed in sections in the structuring step up to the height of the episubstrate layer or removed by etching so that the episubstrate layer is not completely covered by the epiststructure layer. This patterning step may be carried out, for example, in an insulation etch, in which the epistemic layer is selectively removed in certain areas from the underlying episubstrate layer in order to allow a subsequent front-side electrical contacting of the episubstrate via contact windows arranged in these areas.

The structuring step, in particular the separation, stripe and / or insulation etching, preferably comprises a lithography. Such structuring methods are well known in the field of semiconductor production and require no further explanation. The etches are preferably carried out dry-chemically, in particular by means of plasma etching (ICPRIE or RIE process), but they can also be carried out wet-chemically.

According to a possible exemplary embodiment, the spatially coherent structure formed in the structuring step is passivated or coated over the whole area with an electrically insulating passivation layer in a passivation step following the structuring step, preferably immediately following. The passivation layer consists for example of SiN or SiO ₂ .

Subsequently, the passivation layer is preferably removed in sections by means of a further dry or wet chemical etching. This is done to expose the contact window to allow a front-side interconnection of the individual emitter. Accordingly, the previously passivated epistemic structure is again exposed in sections to form p-contact windows or the previously passivated episubstrate for forming n-contact windows.

Particularly preferably, the contact windows are provided with metallic coatings in a subsequent, in particular immediately subsequent metallization step such that the individual structures assigned to the individual emitters are connected in series. The interconnection of the individual structures is thus carried out by the application of correspondingly conductive metallic coatings on the wafer level, d. H. for a plurality of diode laser arrays formed later by singulation in a single manufacturing step. A subsequent complex separate contacting of the individual emitter can thus be dispensed with.

Particularly preferably, the metallization step takes place in two stages. In a first metallization step, first metallic coatings are applied to the spatially coherent structure, which forms the diode laser arrangement after singulation. The first metallic coating contacts only the n-contact windows on the episubstrate and is preferably made up of a plurality of metallic layers, such as an AuGeNi or a TiPtAu metal sequence. After the first metallic coating has been applied, it is subjected to a suitable alloying process. In a subsequent second metallization step, at least one second metallic coating is applied, which comprises at least one of the first metallic coatings contacting the n-contact windows P contact window connects, which is arranged on the epistar structure of an adjacent single structure. In other words, a series connection of at least two individual emitters is assigned by the electrically conductive connection which is provided by the second metallic coating

Individual structures effected. The second metallic coating also preferably comprises a plurality of metallic layers, in particular a combination of titanium, platinum and gold, which are deposited, for example, by means of physical vapor deposition, particularly preferably by electron beam evaporation, or by means of a sputtering method. Such methods can also be used to deposit the first metallic coating. In other embodiments, the first and / or second metallic coating is electrodeposited, in particular, the first and / or second metallic coating may include at least one electrodeposited gold layer. Further, in embodiments where the diode laser array is later placed on a heat sink by means of brazing (e.g., AuSn solder), a corresponding platinum barrier is considered as the diffusion barrier for the braze.

In preferred exemplary embodiments, the basic carrier, which in the structuring step experiences a spatially coherent structure which determines the later diode laser arrangement, is formed from at least two layer structures, which are bonded to one another in a bonding step. This has the advantage that the layer thickness of the layers constituting the two layer structures can be selectively adjusted before the structuring step.

Particularly preferably, the first layer structure comprises the sequence of the epistrukturschicht, the Episubstratschicht, an insulating layer and a first bonding layer. The insulating layer serves to electrically insulate the episubstrate layer arranged above it from the bonding layer, which is generally electrically conductive. The first layer structure is applied on the part of the epistarchic layer on a further carrier plate, which gives mechanical stability in the preceding method steps of the first layer structure and is removed after the first bonding layer with a second bonding layer of the second layer structure in the bonding step, thus therefore the two layer structures forming the base support was connected.

The insulating layer is preferably made of SiN or SiO ₂ . The insulating layer is applied to the episubstrate layer, which has preferably been thinned in a preceding process step.

The arrangement of the first layer structure on a further carrier plate in a preceding at least the bonding process step provides the necessary stability, so that the Episubstratschicht can be thinned to a minimum possible substrate thickness, which is preferably between 50 .mu.m and 100 .mu.m residual thickness. On the one hand, this method step ensures a minimum etch depth for the subsequent separation etching during the separation step, on the other hand, a good cleavage surface is provided for singulating the formed wafer stacks in diode laser arrays or diode laser arrays.

The second layer structure comprises the second bonding layer and the carrier substrate layer. The second layer structure is preferably applied by the carrier substrate layer on the carrier plate and thinned accordingly before the application of the second bonding layer. In particular, the layer thickness of the carrier substrate layer can likewise be reduced to between 50 μm and 100 μm residual thickness. Particularly suitable materials of the carrier substrate layer are both doped and undoped III-V semiconductor materials. In other embodiments, a silicon substrate is used as the carrier substrate layer.

As the first and / or second bonding layer, thin layers, in particular of Au, Al, Ge, Sn, SU8, BCB, polyimide and / or SOG, are deposited on the insulating layer or on the carrier substrate layer. The two metal layers forming the first and second bonding layers are connected together in the bonding step. The bonding methods used for this purpose preferably include eutectic bonding, adhesive bonding or thermocompressive bonding.

The monolithic diode laser arrangement is formed by separating the spatially coherent structure formed substantially in the structuring step, wherein the spatially coherent structure is optionally coated in the metallization step.

A laser device according to the invention comprises at least one of the diode laser arrangements described above, so that reference is first made to the relevant explanations. Such laser devices can be used in particular for direct material processing or in the medical field, for example in the field of medical therapy or diagnosis. According to particularly preferred embodiments, the laser device comprises at least one diode laser arrangement having a plurality of series-connected individual emitters, which are arranged on a common carrier substrate. The at least one diode laser arrangement has one optic per collimation direction.

In other embodiments, the laser device includes a plurality of diode laser arrays connected electrically in parallel and / or in series with each other to provide high powers.

Particularly preferably, a laser device comprises an optical medium into which the laser light generated by the diode laser arrangement can be coupled for optically pumping the optical medium. The diode laser arrangement is thus part of a pump module of the laser device, which may be embodied, for example, as a solid-state, fiber, or disk laser.

In the following, possible embodiments of the invention will be explained in more detail with reference to the drawings. Showing:

1 : a first and a second layer structure, before their connection to a base support in a schematic sectional view;

2 the structured in a structuring step to a diode laser array defining spatially continuous structure structured carrier in a schematic sectional view;

3 the spatially connected structure passivated in a passivation step in a schematic sectional view;

4 the passivated structure provided with a first metallic coating in a metallization step in a schematic sectional representation;

5 the passivated structure provided with a first metallic coating or the diode laser arrangement in a schematic sectional representation;

Corresponding parts are provided in all figures with the same reference numerals.

1 shows a first layer structure 1 and a second layer structure 2 in a schematic sectional view, each several on carrier plates 3 . 4 arranged layers of semiconductor materials or metals.

The first layer structure comprises an episubstrate layer 5 , which consists of a III-V semiconductor material. In the embodiment shown, the episubstrate layer exists 5 of n-doped gallium arsenide, n-GaAs. To produce a high power diode laser array 100 On the basis of a GaAs substrate are in a first manufacturing step on the Episubstratschicht 5 hereinafter an n-doped cladding layer (eg AlGaAs, InGaAsP, AlGaAsSb), an n-side waveguide layer (eg AlGaAs, InGaAsP, AlGaAsSb), a quantum well structure (eg InGaAs, InGaAsP, GaInSb, GaInAsSb) in which the laser light generating recombination processes take place , a p-side waveguide structure (eg AlGaAs, InGaAsP, AlGaAsSb), a p-doped cladding layer (eg AlGaAs, InGaAsP, AlGaAsSb) and a p-doped contact layer (eg GaAs, GaSb, InP, InGaAs). The entirety of these on the episubstrate layer 5 Deposited layers is hereinafter referred to as epistemic layer 6 designated.

In a second manufacturing step, the episubstrate layer becomes 5 on the part of the epistemic layer 6 temporarily on a first carrier plate 3 bonded, leaving the epistemic layer 6 between the first carrier plate 3 and the episubstrate layer 5 lies. The episubstrate layer 5 is then thinned to a minimum possible substrate thickness by means of conventional processes, which are well known in the field of semiconductor manufacturing and require no further explanation. As a result, inter alia, the etching depth required in a subsequent structuring step is reduced and the subsequent singulation of the first and second layer structures 1 . 2 comprehensive wafer structure in diode laser arrays 100 facilitated. The aim is a residual thickness of the episubstrate 5 which is between 50 μm and 100 μm.

In a third production step, a carrier substrate layer is formed 10 the second layer structure 2 also on a second carrier plate 4 Bonded and also thinned to about 50-100 microns residual thickness. The carrier substrate layer 10 consists of a carrier substrate, which is a doped III-V semiconductor substrate in the embodiment shown.

In other embodiments, undoped III-V semiconductor substrates or silicon substrate may also be used.

In a fourth production step, the thinned episubstrate 5 with an electrically insulating insulation layer 7 which in the preferred embodiment shown consists of SiN coated. In an alternative embodiment, the insulating layer consists 7 made of SiO ₂ .

On the insulation layer 7 becomes a thin first bonding layer 8th deposited, which consists of gold (Au). Accordingly, on the carrier substrate layer 10 a thin second bonding layer 9 deposited, which also consists of gold.

In other embodiments, the first and / or second bonding layer 8th . 9 Al, Ge, Sn, SU8, BCB, polyimide or SOG.

2 shows the thinned episubstrate and carrier substrate layers 5 . 10 , before each bonding on carrier plates 3 . 4 are applied. On the episubstrate layer 5 is the insulation layer 7 been deposited, which is the first bonding layer 8th wearing. The carrier substrate layer 10 the second layer structure 2 carries the second bonding layer 9 ,

In a fifth production step, the first layer structure 1 with the first bonding layer 8th having on the thinned and coated carrier substrate layer 10 bonded. The two bond layers 8th . 9 make a joint bonding layer after bonding 11 that is in the 2 to 5 is shown. The first and second bonding layers 8th . 9 are connected in the embodiment shown by eutectic bonding together, in other embodiments, adhesion bonding or thermo-compressive bonding can be used. As a result, a permanently bonded wafer stack or base carrier is formed, which comprises the first and the second layer structure 1 . 2 includes. The first carrier plate 3 that are on the side of the epistemic layer 6 of the basic carrier is dissolved by this and the uppermost layer of the epistrukturschicht 6 , which is formed by the p-doped contact layer, is cleaned.

The bonded base support will now be used for the fabrication of diode laser arrays 100 structured conventional lithographic process in a structuring step, so that this in 2 shown spatially coherent structure 15 receives. For this purpose, in a sixth method step first contact strips 12 for current injection by etching the p-type contact layers of the epitaxial layer 6 educated. By the width of the contact strip defined in the strip etching 12 the extent of the electric field and the area of the current injection are defined.

After that, isolation trenches 13 by means of an insulation etch into the epitaxial layer 6 brought in. For this the epistrukturschicht becomes 6 in sections from the episubstrate layer 5 removed by etching. The separation of the individual to single emitters 101 the diode laser array 100 assigned individual structures 14 takes place by means of a Separationsätzung, in an etching of the base support to above the bonding plane 11 arranged insulation layer 7 consists. All etchings are carried out dry chemically, for example by ICPRIE or RIE methods, in other embodiments, the etchings of the patterning step can also be carried out wet-chemically.

The diode laser array 100 essentially obtains its spatially coherent structure in the structuring step described above 15 containing a variety of individual structures 14 which is on the carrier substrate layer 10 are arranged. After separating this spatially connected structure 15 by scribing and splitting the wafer stack form the individual structures 14 according to the individual emitter 101 the diode laser array 100 , what a 5 is shown. The individual structures 14 each comprise episubstrate 17 , sections of epistemic structures 18 are covered. The episubstrate 17 and the epistemologies 18 arise as described above by etching the base carrier in the patterning step from the Episubstratschicht 5 and the epistemic layer 6 , With regard to the layer sequence is thus the epistemology 18 with the epistemic layer 6 identical.

3 illustrates a seventh process step subsequent to the structuring step, in which the structured surface of the spatially coherent structure 15 initially over the entire surface with an electrically insulating passivation layer 16 , which consists for example of SiN or SiO ₂ , is passivated.

Subsequently, the passivation layer 16 by a dry or wet chemical etching step sections on the Episubstraten 17 and the epistemologies 18 structured. For the formation of p-contact windows 19 becomes the contact strip 12 of epistemologies 18 exposed. Accordingly, the passivation layer becomes 16 in the area of isolation trenches 13 in sections for the formation of n-contact windows 20 away.

In an eighth step, the metallization of the spatially connected structure takes place 15 , The metallization step is in two stages in the example shown. First, only the N-metallization on the n-contact windows 20 by applying, for example, AuGeNi or TiPtAu metal sequences and subsequent suitable alloying processes, as in 4 illustrated. This is in the range of n-contact window 20 a first metallic coating 21 applied, for later contacting with a second metallic coating 22 serves.

After applying the final second metallic coating 22 , which consists of a combination of titanium, platinum and gold, is one of the representation of 5 corresponding layer structure formed. The second metallic coating 22 is applied by means of a physical Gasabscheideverfahrens, in other embodiments, a sputtering method can be used for this purpose. The second metallic coating 22 connects each one n-contact window 20 with a p-contact window 19 an adjacent single structure 17 or a single emissary 101 , In other words, the thus applied second metallic coating 22 an interconnection of the individual emitters 101 in series.

In a tenth process step, the support plate 10 from the carrier substrate layer 10 away. The finished wafer has the spatially coherent structure 15 on that in 5 is shown. The wafer is cleaved by scribing and splitting the wafer stack parallel to the plane of the drawing and thereby into the individual diode laser arrays 100 sporadically. The cleavage surfaces oriented perpendicular to the plane of the drawing thereby form exit sides for the laser emission, which are subsequently cleaned of semiconductor oxides and impurities by means of suitable methods and subsequently encapsulated and coated with reflection layers by means of suitable methods.

In a final step, the series connected diode laser arrays 101 with the epistemology 18 soldered to appropriately structured heat sinks using soft solders (eg indium solder) or brazing alloys (eg AuSn solder). The diode laser array thus formed 101 is particularly suitable for high-power laser devices. For this purpose, in particular a plurality of diode laser arrangements 101 be connected in series or in parallel. That of diode laser arrangement 101 Provided laser light can find direct use, for example in the field of medical therapy or diagnostics, or be used for optical pumping of an optical medium. Accordingly, laser devices in which the diode laser array 101 Part of a pump module for optically pumping the optically active medium as well as the subject of the present invention, such as laser devices, in which the diode laser array 101 provided light is used directly.

The invention has been described above with reference to preferred embodiments. It is understood, however, that the invention is not limited to the specific embodiment of the exemplary embodiments shown, but rather the person skilled in the art can derive variations from the description without departing from the essential basic idea of the invention.

LIST OF REFERENCE NUMBERS

1

 first layer structure

2

 second layer structure

3

 first carrier plate

4

 second carrier plate

5

 Episubstratschicht

6

 Epistrukturschicht

7

 insulation layer

8th

 first bonding layer

9

 second bonding layer

10

 Carrier substrate layer

11

 Bond level

12

 Contact strips

13

 isolation trench

14

 Single structure

15

 structure

16

 passivation

17

 Episubstrat

18

 epi

19

 p-contact window

20

 n-contact window

21

 first metallic coating

22

 second metallic coating

100

 The diode laser assembly

101

 Single emitters

Claims (23)

Monolithic diode laser arrangement ( 100 ), comprising a multiplicity of individual emitters arranged side by side on a common carrier substrate ( 101 ), each contact window ( 19 . 20 ) for electrical contacting, which at the respective individual emitters ( 101 ) are arranged on a front side opposite the carrier substrate. Monolithic diode laser arrangement ( 100 ) according to claim 1, wherein the individual emitters ( 101 ) with the carrier substrate indirectly via an arranged therebetween bonding plane ( 11 ) are connected. Monolithic diode laser arrangement ( 100 ) according to claim 2, wherein the individual emitters ( 101 ) from the bonding level ( 11 ) by means of an insulating layer ( 7 ) are electrically isolated. Monolithic diode laser arrangement ( 100 ) according to one of the preceding claims, wherein the contact windows ( 19 . 20 ) the single emitter ( 101 ) by means of metallic coatings ( 21 . 22 ), that the individual emitters ( 101 ) are electrically connected to each other in series. Monolithic diode laser arrangement ( 100 ) according to any one of the preceding claims, wherein each individual emitter ( 101 ) a multilayered epistemic structure ( 18 ) on an episubstrate ( 17 ) is applied in such a way that the episubstrate ( 17 ) of the epistemic structure ( 18 ) is not completely covered. Monolithic diode laser arrangement ( 100 ) according to claim 5, wherein the epistemic structure ( 18 ) comprises at least one p-doped cladding layer and at least one n-doped cladding layer, wherein a p-contact window ( 19 ) for electrically contacting the p-doped cladding layer on the front side of the epistemic structure ( 18 ) and an Contact window ( 20 ) for electrically contacting the n-doped cladding layer on the front side on the episubstrate ( 17 ) in the region in which the episubstrate ( 17 ) not by the epistemic structure ( 18 ) is arranged, is arranged. Monolithic diode laser arrangement ( 100 ) according to claim 6, wherein one of the p-contact windows ( 19 ) at least one of the individual emitters ( 101 ) with the n-contact window ( 20 ) of the at least one individual emitter ( 101 ) adjacent single emitter ( 101 ) by means of the metallic coatings ( 21 . 22 ) is electrically connected. Method for producing a monolithic diode laser arrangement ( 100 ) according to claim 1, wherein the configuration of the arrangement of the individual emitter ( 101 ) on the carrier substrate determining spatially related structure ( 15 ) takes place in a structuring step in which the individual emitters ( 101 ) assigned individual structures ( 14 ) are formed from a multilayer base carrier comprising a carrier substrate, without the individual structures ( 14 ) are detached from the carrier substrate and the front sides of the individual structures (FIGS. 14 ) for the formation of contact windows ( 19 . 20 ) are provided. Method according to claim 8, wherein the multilayer base carrier comprises at least one epitaxial layer ( 6 ), an episubstrate layer ( 5 ) and a carrier substrate layer ( 10 ), which are supported on a carrier plate ( 4 ) are applied. The method of claim 9, wherein the epitaxial layer ( 6 ) and the episubstrate layer ( 5 ) of the basic carrier in the structuring step to form the individual structures ( 14 ) are removed in sections. Method according to claim 9 or 10, wherein in the structuring step contact strips ( 12 ) for current injection into the epitaxial layer ( 6 ) are introduced. Method according to one of claims 9 to 11, wherein the epitaxial layer ( 6 ) in the structuring step in sections up to the height of the episubstrate layer ( 5 ) is removed in such a way that the episubstrate layer ( 5 ) is not completely removed from the epistemic layer ( 6 ) is covered. Method according to one of the preceding claims, wherein the structuring step comprises a lithography. Method according to one of the preceding claims, wherein in a passivation step the spatially coherent structure formed in the structuring step ( 15 ) over the entire surface with a passivation layer ( 16 ) is passivated. The method of claim 14, wherein passivation layer ( 16 ) by means of a dry or wet chemical etching to expose the contact window ( 19 . 20 ) is removed in sections. Method according to one of the preceding claims, wherein the contact windows ( 19 . 20 ) in a metallization step in such a way with metallic coatings ( 21 . 22 ), that the individual emitters ( 101 ) assigned individual structures ( 14 ) are connected in series. The method of claim 16, wherein the metallization step is carried out in two stages and in a first metallization step first metallic coatings ( 21 ) on the spatially connected structure ( 15 ) which are deposited on the episubstrate ( 17 ) arranged n-contact window ( 20 ) and in a second metallization step at least one second metallic coating ( 22 ) is applied, the at least one of the n-contact window ( 20 ) contacting first metallic coatings ( 21 ) with a p-contact window ( 19 ), which depends on the epistemic structure ( 18 ) of an adjacent single structure ( 14 ) is arranged. Method according to claim 8, wherein the base carrier consists of at least two layer structures ( 1 . 2 ) is formed, which are connected by bonding in a bonding step. The method of claim 18, wherein a first layer structure ( 1 ) the sequence of the epistemic layer ( 6 ), the episubstrate layer ( 5 ), an insulation layer ( 7 ) and a first bonding layer ( 8th ), wherein the first layer structure ( 1 ) by the epistemic layer ( 6 ) on another carrier plate ( 3 ), which is removed after the first bonding layer ( 8th ) with a second bonding layer ( 9 ) of the second layer structure ( 2 ) was connected in the onding step. The method of claim 19, wherein the second layer structure ( 2 ) the second bonding layer ( 9 ) and the carrier substrate layer ( 10 ), wherein the second layer structure ( 2 ) from the carrier substrate layer ( 10 ) on the carrier plate ( 4 ) is applied. Method according to one of the preceding claims, wherein the monolithic diode laser arrangement ( 100 ) by separating the spatially related structure ( 15 ) is formed. Laser device with a diode laser arrangement ( 100 ) according to one of claims 1 to 7. Laser device according to claim 22, wherein the diode laser arrangement ( 100 ) is arranged for optically pumping an optical medium.

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