CN219066815U - Packaging structure of high-power module - Google Patents
Packaging structure of high-power module Download PDFInfo
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- CN219066815U CN219066815U CN202222938585.4U CN202222938585U CN219066815U CN 219066815 U CN219066815 U CN 219066815U CN 202222938585 U CN202222938585 U CN 202222938585U CN 219066815 U CN219066815 U CN 219066815U
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Abstract
The utility model provides a packaging structure of a high-power module, which relates to the technical field of power semiconductor devices and comprises the following components: the insulating heat-conducting base plate is connected with a plurality of metallized ceramic substrates, and each metallized ceramic substrate comprises a plurality of first substrates and a plurality of second substrates; the IGBT chips and the diode chips are welded on the conductive copper layers of the first substrates, and the metallized ceramic substrates and the IGBT chips and the diode chips and the corresponding first substrates are electrically connected by adopting copper strip bonding; bonding surfaces of the IGBT chips, bonding surfaces of the diode chips and the first substrates are bonded by copper strips; a plurality of power terminals are welded on each first substrate; a plurality of signal terminals are welded on each second substrate; the shell cover is arranged on the insulating heat conducting substrate, a plurality of openings are formed in the bottom of the shell, and the power terminals and the signal terminals are exposed from the openings respectively. The high-frequency power supply has the beneficial effects that the current carrying capacity is greatly improved to meet the high-frequency requirement, and the failure risk is reduced; the structure is simple and the packaging quality is good.
Description
Technical Field
The utility model relates to the technical field of power semiconductor devices, in particular to a packaging structure of a high-power module.
Background
The IGBT power module is a core semiconductor component for power electronic conversion, and for a common power module, the electric connection of the power module is mainly realized by aluminum wire ultrasonic welding, and the grid electrode of the IGBT chip is connected with the metallized ceramic substrate, and the IGBT chip and the diode chip are connected with the metallized ceramic substrate through aluminum wires. However, in the field of power electronics, along with the development of power semiconductor technology, power modules are widely applied to new energy automobiles, new energy power generation, rail transit and the like, and high efficiency and high power density are becoming key indexes in application, so that larger current needs to flow inside the power modules, and the current density is continuously increased. The current carrying capacity of the aluminum wire is weaker, the thermal expansion coefficient is smaller, the current and temperature distribution on the surface of the chip are uneven due to the fact that the aluminum wire is connected too much, the reliability of the module is affected, and the traditional aluminum wire (belt) cannot meet the electrical connection requirement of a high-power module.
Disclosure of Invention
Aiming at the problems existing in the prior art, the utility model provides a packaging structure of a high-power module, which comprises:
the device comprises an insulating heat-conducting substrate, a plurality of metal ceramic substrates, a plurality of metal electrodes and a plurality of metal electrodes, wherein the insulating heat-conducting substrate is connected with the plurality of metal ceramic substrates, the metal ceramic substrates are electrically connected through copper strip bonding, and the metal ceramic substrates are a plurality of first substrates and a plurality of second substrates;
at least one IGBT chip and at least one diode chip are welded on the conductive copper layer of each first substrate, and the IGBT chip and the diode chip are electrically connected with the corresponding first substrate by adopting copper strip bonding;
bonding surfaces of the IGBT chips, bonding surfaces of the diode chips and the first substrates are bonded by copper strips;
a plurality of power terminals, each of which is welded to the collector region of each first substrate;
a plurality of signal terminals, each of which is welded on each of the second substrates correspondingly;
the shell is arranged on the insulating heat conducting substrate in a covering mode, a plurality of openings corresponding to the power terminals and the signal terminals are formed in the bottom of the shell, and the power terminals and the signal terminals are exposed out of the openings.
Preferably, the exposed parts of the power terminals and the signal terminals are provided with mounting holes, and the shell is also provided with a plurality of mounting nuts corresponding to the mounting holes respectively;
after the exposed parts of the power terminals and the signal terminals are partially bent towards the direction of the shell, the exposed parts are fixed at the positions of the mounting holes through the corresponding mounting nuts.
Preferably, the shell and the insulating heat conducting substrate are fixed through screws after being bonded through sealant.
Preferably, each first substrate is distributed in an array on the insulating and heat conducting substrate.
Preferably, each second substrate is welded on one side of the insulating heat conducting substrate in a linear arrangement, and each second substrate is respectively connected with the collector electrode, the emitter electrode and the grid electrode of each first substrate in a bonding way through copper wires.
Preferably, each IGBT chip and each diode chip are connected to each first substrate by soldering, and the solder is made of a solder material containing Sn, including: snPb, snAg, snAgCu, pbSnAg, and the maximum welding temperature is controlled between 150 ℃ and 300 ℃.
Preferably, each first substrate is connected with the insulating heat conducting substrate through welding, and the welding flux adopts a welding material containing Sn and comprises the following steps: snPb, snAg, snAgCu, pbSnAg, and the maximum welding temperature is controlled between 150 ℃ and 300 ℃.
Preferably, the shell is made of a high-temperature resistant insulating material.
The technical scheme has the following advantages or beneficial effects:
1) The chip, the insulating heat-conducting substrate and the metallized ceramic substrate are bonded by adopting copper bonding, compared with the traditional aluminum wire bonding mode, the thermal conductivity and the electrical conductivity of copper are greatly superior to those of aluminum wires, the thermal expansion coefficient is low, the reliability and the current-carrying capacity are greatly improved, the high-frequency requirement is met, and the failure risk of bonding the aluminum wires is reduced;
2) The high-power module packaging structure is simple in structure, good in packaging quality and capable of meeting the requirements of high-power module packaging and technology.
Drawings
FIG. 1 is a schematic illustration of a package structure of a high power module without a housing according to a preferred embodiment of the present utility model;
fig. 2 is a schematic structural view of a package structure of a high-power module according to a preferred embodiment of the present utility model.
Detailed Description
The utility model will now be described in detail with reference to the drawings and specific examples. The present utility model is not limited to the embodiment, and other embodiments may fall within the scope of the present utility model as long as they conform to the gist of the present utility model.
In a preferred embodiment of the present utility model, based on the above-mentioned problems existing in the prior art, a package structure of a high-power module is provided, as shown in fig. 1 and 2, including:
the insulating heat-conducting substrate 1, a plurality of metallized ceramic substrates 2 are connected to the insulating heat-conducting substrate 1, the metallized ceramic substrates 2 are electrically connected through copper strip bonding, and each metallized ceramic substrate comprises a plurality of first substrates 21 and a plurality of second substrates 22;
at least one IGBT chip 3 and at least one diode chip 4 are welded on the conductive copper layer of each first substrate 21, and the IGBT chip 3 and the diode chip 4 are electrically connected with the corresponding first substrate 21 by adopting copper strip bonding;
copper strips are adopted to bond the bonding surfaces of the IGBT chips 3, the bonding surfaces of the diode chips 4 and the first substrates 21;
a plurality of power terminals 5, each power terminal 5 corresponding to a collector region soldered on each first substrate 21;
a plurality of signal terminals 6, each signal terminal 6 being soldered to a respective second substrate 22;
the housing 7 is provided on the insulating and heat-conducting substrate 1, and a plurality of openings 71 corresponding to the power terminals 5 and the signal terminals 6 are provided at the bottom of the housing 7, and the power terminals 5 and the signal terminals 6 are exposed from the openings.
Specifically, in this embodiment, the metallized ceramic substrates 2 are electrically connected by copper tape bonding, and the IGBT chip 3 and the diode chip 4 are electrically connected to the corresponding first substrate 21 by copper tape bonding; copper strips are adopted to bond the bonding surfaces of the IGBT chips 3, the bonding surfaces of the diode chips 4 and the first substrates 21; the reliability and the current carrying capacity are greatly improved, the high-frequency requirement is met, and the bonding failure risk is reduced.
In the preferred embodiment of the present utility model, as shown in fig. 1 and 2, the exposed parts of each power terminal 5 and each signal terminal 6 are provided with mounting holes, and the housing is further provided with a plurality of mounting nuts corresponding to the mounting holes respectively;
the exposed portions of the power terminals 5 and the signal terminals 6 are bent toward the housing, and then fixed to the positions of the mounting holes by corresponding mounting nuts.
Specifically, in this embodiment, each power terminal 5 and each signal terminal 6 are exposed from the opening on the housing, and are partially bent towards the direction of the housing, and are fixed at the position of the mounting hole through each mounting nut, so that the strength of the packaging structure is increased, the packaging quality is good, and the packaging and process requirements of the high-power module are met.
In the preferred embodiment of the present utility model, as shown in fig. 2, the housing 7 and the insulating and heat conducting substrate 1 are adhered by sealant and then fixed by screws.
Specifically, in this embodiment, after the casing 7 and the insulating and heat conducting substrate 1 are bonded by sealant, the structural connection strength between the casing 7 and the insulating and heat conducting substrate 1 is further increased, the packaging quality is good, and the packaging and process requirements of the high-power module are satisfied.
In a preferred embodiment of the present utility model, as shown in fig. 1, each first substrate 21 is distributed in an array on an insulating and heat-conducting substrate.
Specifically, in this embodiment, each first substrate 21 is distributed in an array on the insulating and heat-conducting substrate 1, and is orderly arranged, so that the risk of staggering bonding copper strips is reduced.
In the preferred embodiment of the present utility model, as shown in fig. 1, each second substrate 22 is welded on one side of the insulating and heat-conducting substrate in a linear arrangement, and each second substrate 22 is respectively bonded with the collector, the emitter and the gate of each first substrate 21 through copper wires.
Specifically, in the present embodiment, each second substrate 22 is bonded to the collector, emitter and gate of each first substrate 21 through copper wires, and the electrical connection between each signal terminal 5 and each IGBT chip 3 and each diode chip 4 of each first substrate 21 is achieved through the electrical connection between each second substrate 22 and each first substrate 21.
In the preferred embodiment of the present utility model, each IGBT chip 3 and each diode chip 4 are connected to each first substrate 21 by soldering, and the solder using a solder material containing Sn includes: snPb, snAg, snAgCu, pbSnAg, and the maximum welding temperature is controlled between 150 ℃ and 300 ℃.
In the preferred embodiment of the present utility model, each first substrate 21 is connected to the insulating and heat conducting substrate 1 by soldering, and the solder comprises a soldering material containing Sn: snPb, snAg, snAgCu, pbSnAg, and the maximum welding temperature is controlled between 150 ℃ and 300 ℃.
In the preferred embodiment of the present utility model, the housing 7 is made of a high temperature resistant insulating material.
Specifically, in this embodiment, the casing 7 is made of a high-temperature-resistant insulating material, so that the high-temperature resistance of the packaging structure is enhanced, and the risk of fire due to high temperature caused by power module failure is prevented.
The foregoing description is only illustrative of the preferred embodiments of the present utility model and is not to be construed as limiting the scope of the utility model, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and drawings, and are intended to be included within the scope of the present utility model.
Claims (6)
1. A package structure of a high power module, comprising:
the device comprises an insulating heat-conducting substrate, a plurality of metal ceramic substrates, a plurality of metal electrodes and a plurality of metal electrodes, wherein the insulating heat-conducting substrate is connected with the plurality of metal ceramic substrates, the metal ceramic substrates are electrically connected through copper strip bonding, and the metal ceramic substrates are a plurality of first substrates and a plurality of second substrates;
at least one IGBT chip and at least one diode chip are welded on the conductive copper layer of each first substrate, and the IGBT chip and the diode chip are electrically connected with the corresponding first substrate by adopting copper strip bonding;
bonding surfaces of the IGBT chips, bonding surfaces of the diode chips and the corresponding first substrates are bonded by copper strips;
a plurality of power terminals, each of which is welded to the collector region of each first substrate;
a plurality of signal terminals, each of which is welded on each of the second substrates correspondingly;
the shell is arranged on the insulating heat conducting substrate in a covering mode, a plurality of openings corresponding to the power terminals and the signal terminals are formed in the bottom of the shell, and the power terminals and the signal terminals are exposed out of the openings.
2. The package structure according to claim 1, wherein each of the power terminals and the exposed portions of each of the signal terminals are provided with mounting holes, and a plurality of mounting nuts corresponding to each of the mounting holes are further provided on the housing;
after the exposed parts of the power terminals and the signal terminals are partially bent towards the direction of the shell, the exposed parts are fixed at the positions of the mounting holes through the corresponding mounting nuts.
3. The package structure of claim 1, wherein the housing and the insulating and heat conducting substrate are bonded by sealant and then fixed by screws.
4. The package structure of claim 1, wherein each of the first substrates is disposed in an array on the thermally insulating substrate.
5. The package structure according to claim 1, wherein each of the second substrates is soldered on one side of the insulating and heat-conducting substrate in a linear arrangement, and each of the second substrates is bonded to the collector, emitter and gate of each of the first substrates through copper wires, respectively.
6. The package structure of claim 1, wherein the housing is made of a high temperature resistant insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222938585.4U CN219066815U (en) | 2022-11-04 | 2022-11-04 | Packaging structure of high-power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222938585.4U CN219066815U (en) | 2022-11-04 | 2022-11-04 | Packaging structure of high-power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219066815U true CN219066815U (en) | 2023-05-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222938585.4U Active CN219066815U (en) | 2022-11-04 | 2022-11-04 | Packaging structure of high-power module |
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| Country | Link |
|---|---|
| CN (1) | CN219066815U (en) |
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2022
- 2022-11-04 CN CN202222938585.4U patent/CN219066815U/en active Active
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