CN1330415A - High-brightness LED with distributed contact layer - Google Patents
High-brightness LED with distributed contact layer Download PDFInfo
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- CN1330415A CN1330415A CN00118662A CN00118662A CN1330415A CN 1330415 A CN1330415 A CN 1330415A CN 00118662 A CN00118662 A CN 00118662A CN 00118662 A CN00118662 A CN 00118662A CN 1330415 A CN1330415 A CN 1330415A
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Abstract
A high-brightness LED with distributed contact layer is composed of the first electrode, a semiconductor stack on the first electrode for playing luminous role, a distributed contact layer on the semiconductor stack with ohm contact between them, an electrically conducting transparent layer on said contact layer with ohm contact between them and generating Schottky barrier between it and said semiconductor stack layer, and the second electrode on said transparent layer.
Description
The present invention relates to a kind of light-emitting diode, relate in particular to a kind of high brightness LED.
At the United States Patent (USP) the 5th of giving people such as Biing-Jye Lee, 789, in No. 768 (its applicant is identical with this case), disclose the led configurations that shows as Fig. 1, wherein the semiconductor-based end 12 that is made of n type GaAs, be formed on the n type back electrode 10, form the Bragg reflecting layer 30 of multilayer, this multilayer Bragg reflecting layer 30 should be made of series materials such as AlGaInP or AlGaAs at semiconductor-based the end 12.Laminated construction 14 is formed on the reflector 30, comprises the n type bottom bond course 140 that is made of AlGaInP, active layer 142 that AlGaInP constitutes, and the p type top bond course 144 that is made of AlGaInP in this laminated construction 14.One deck p type window layers 16 is formed on the top bond course 144, and this window layers 16 should be made of transparent materials such as GaP, GaAsP, GaInP or AlGaAs.One deck p type contact layer 17 is formed on the window layers 16, and this contact layer 17 should be made of materials such as GaP, GaAsP, GaInP or GaAs.Layer of transparent conductive layer 19 is formed on the contact layer 17, and extends to the central hollow part of contact layer 17, and contacts with window layers 16 and form Schottky barrier, and this conductive layer 19 should be made of transparent materials such as indium oxide, tin oxide or tin indium oxides.Electrode 20 is formed on the conductive layer 19 before the one p type.
The light-emitting diode of this prior art is characterised in that the conductive layer 19 and the contact-making surface of contact layer 17 form ohmic contact, and the contact-making surface of conductive layer 19 and window layers 16 forms Schottky barrier, thereby the electric current of sending from preceding electrode 20, after in conductive layer 19, being distributed, by this ohmic contact, but, flow to downwards in the active layer 142 not by this Schottky barrier, meet with electric current, and produce luminous effect from rear electrode 10.
In the light-emitting diode of this prior art, pass through this ohmic contact though can control the electric current of sending from preceding electrode 20, but do not pass through this Schottky barrier, thereby can reduce electric current and luminous effect under preceding electrode 20, with the ill effect of electrode 20 shield lights before avoiding.But the light that produces in its active layer 142 must see through contact layer 17 and send, and contact layer 17 absorbs about light of 15% to 20% usually, and the interface of 16 of contact layer 17 and window layers, also causes light-absorbing ill effect.In other words,, promptly can reduce 16 light-absorbing ill effects of interface of contact layer 17 and contact layer 17 and window layers if can reduce the distribution area of contact layer 17 on window layers 16, and then the brightness that can improve light-emitting diode.
Thereby, a purpose of the present invention is to provide a kind of high brightness LED with distributed contact layer, interface produces light-absorbing ill effect between contact layer and contact layer and window layers by reducing, and reaches the enhancement effect that improves light-emitting diode luminance.
For reaching this purpose, comprise one first electrode according to a kind of high brightness LED of the present invention with distributed contact layer; The semiconductor substrate is formed on this first electrode; One has first bond course of first conductivity, is formed on this semiconductor-based end; One active layer is formed on this first bond course; One has second bond course of second conductivity, is formed on this active layer; One has the window layers of second conductivity, is formed on this second bond course; One distributed contact layer with a predetermined distribution patterns, is formed on this window layers; One transparency conducting layer is formed on this contact layer and this window layers, forms ohmic contact between this transparency conducting layer and this contact layer, and and this window layers between form Schottky barrier; And one second electrode, be formed on this conductive layer.
Now with reference to following graphic, describe the preferred embodiments of the present invention in detail.In the accompanying drawing:
Fig. 1 is a kind of generalized section of light emitting diode construction of prior art;
Fig. 2 is a kind of generalized section with high brightness LED of distributed contact layer according to first preferred embodiment of the invention;
Fig. 3 is a kind of schematic top plan view with high brightness LED of distributed contact layer shown in Figure 2;
Fig. 4 is a kind of schematic top plan view with high brightness LED of distributed contact layer according to second preferred embodiment of the invention.
Now with reference to each accompanying drawing, describe the present invention in detail.
Fig. 2 and Fig. 3 show the light emitting diode construction according to first preferred embodiment of the invention, wherein the semiconductor-based end 12 that is made of n type GaAs, be formed on the n type back electrode 10, form the Bragg reflecting layer 30 of multilayer, this multilayer Bragg reflecting layer 30 should be made of series materials such as AlGaInP or AlGaAs at semiconductor-based the end 12.Laminated construction 14 is formed on the reflector 30, comprises the n type bottom bond course 140 that is made of AlGaInP, active layer 142 that AlGaInP constitutes, and the p type top bond course 144 that is made of AlGaInP in this laminated construction 14.One deck p type window layers 16 is formed on the top bond course 144, and this window layers 16 should be made of transparent materials such as GaP, GaAsP, GaInP, AlGaInP or AlGaAs.As shown in Figure 3, the zone of one deck distribution of particles formula p type contact layer 17 beyond under the preceding electrode 20 (will be illustrated in back), be formed on the window layers 16, each particle of this contact layer 17 should be by GaP, GaAsP, GaInP, or transparent material such as GaAs constitutes, in this embodiment, each particle is cylindrical, its diameter for example is 8 μ m, two adjacent intergranular distances are 16 μ m, layer of transparent conductive layer 19 be formed on each particle of contact layer 17 with window layers 16 on, form ohmic contact between transparency conducting layer 19 and each particle, and and 16 formation of window layers Schottky barrier, this conductive layer 19 should be by tin indium oxide, indium oxide, tin oxide, zinc oxide, or transparent material such as magnesium oxide constitutes.Electrode 20 is formed on the conductive layer 19 before the one p type.
If in the contact layer 17 size of each particle and two adjacent grain spacings from ratio bigger, the conductive effect desire that then each particle produced is good, but the translucent effect of enhancement is less; Otherwise, if the size of each particle and two adjacent grain spacings from ratio littler, then the conductive effect that each particle produced reduces, but the translucent effect of enhancement is preferred.Thereby, when selecting this ratio, must take into account conductive effect and translucent effect, can select preferred ratio via experiment, to obtain in fact best led lighting effect.
Since according to the setting of distribution of particles formula p type contact layer 17 in the first preferred embodiment of the invention, the light-absorbing ill effect of contact layer obviously can be reduced, and reach the enhancement effect that improves the invention LED lightness.
This case inventor is these preferred embodiments of successful implementation, and have verified it than the prior art, can increase about brightness of 15% to 30%, thereby reach purpose of the present invention.
The above only is each preferred embodiment of the present invention, and scope of the present invention is not limited to these preferred embodiments, and is all according to any change that the present invention did, and all belongs to scope of the present invention.For example, as shown in Figure 4, with the zone beyond the distributed p type of one deck lines contact layer 18 is under preceding electrode 20, be formed on the window layers 16, to replace according to distribution of particles formula p type contact layer 17 in the first preferred embodiment of the invention, or distribution of particles formula p type contact layer 17 extend to before under the electrode 20, obviously do not break away from spirit of the present invention and scope.
Claims (14)
1. the high brightness LED with distributed contact layer comprises:
One first electrode;
Semiconductor lamination (stack) is formed on this first electrode, and this is semiconductor laminated to provide luminous effect;
One distributed contact layer, be formed at this semiconductor laminated on, this distributed contact layer and this semiconductor laminated form ohmic contact;
One transparency conducting layer, its be formed at this contact layer with should be semiconductor laminated on, form ohmic contact between this transparency conducting layer and this contact layer, and and this semiconductor laminated formation Schottky barrier; And
One second electrode is formed on this conductive layer.
2. the high brightness LED with distributed contact layer according to claim 1, wherein this semiconductor laminated comprising;
The semiconductor substrate is formed on this first electrode;
One has first bond course of first conductivity, is formed on this semiconductor-based end;
One active layer is formed on this first bond course;
One has second bond course of second conductivity, is formed on this active layer; And
One has the window layers of second conductivity, is formed on this second bond course.
3. the high brightness LED with distributed contact layer comprises:
One first electrode;
The semiconductor substrate is formed on this first electrode;
One has first bond course of first conductivity, is formed on this semiconductor-based end;
One active layer is formed on this first bond course;
One has second bond course of second conductivity, is formed on this active layer;
One has the window layers of second conductivity, is formed on this second bond course
One distributed contact layer with a predetermined distribution patterns, is formed on this window layers;
One transparency conducting layer is formed on this contact layer and this window layers, forms ohmic contact between this transparency conducting layer and this contact layer, and and this window layers between form Schottky barrier; And
One second electrode is formed on this conductive layer.
4. the high brightness LED with distributed contact layer according to claim 3, wherein this distributed contact layer comprises a plurality of cylindrical contact particles, is distributed on this window layers.
5. the high brightness LED with distributed contact layer according to claim 3, wherein this distributed contact layer comprises a plurality of cylindrical contact particles, the zone of these particles beyond under this second electrode is distributed on this window layers.
6. the high brightness LED with distributed contact layer according to claim 3, wherein this distributed contact layer comprises that many bow strips are distributed on this window layers.
7. the high brightness LED with distributed contact layer according to claim 3, wherein this distributed contact layer comprises plural number bow strip, and the zone beyond these bow strips lie under this second electrode is distributed on this window layers.
8. according to each described a kind of high brightness LED among the claim 2-7 with distributed contact layer, wherein this active layer comprises AlGaInP, this window layers comprises and is selected from GaP, GaAsP, GaInP, AlGaInP, and a kind of material in the constituent material group of AlGaAs institute, this contact layer comprises and is selected from GaP, GaAsP, GaInP, and a kind of material in the constituent material group of GaAs institute, this conductive layer comprises and is selected from tin indium oxide, indium oxide, tin oxide, zinc oxide, and a kind of material in the constituent material group of magnesium oxide institute, this substrate comprises GaAs, this first bond course comprises AlGaInP, this second bond course comprises AlGaInP, this insulating barrier comprises and is selected from silica, silicon nitride, and a kind of material in the constituent material group of aluminium oxide institute, also form a reflector between this semiconductor-based end and this laminated construction, this reflector is made of the Bragg reflecting layer (distributed Braggreflector) of multilayer, and the Bragg reflecting layer of this multilayer comprises a kind of material that is selected from AlGaInP and the constituent material group of AlGaAs institute.
9. the high brightness LED with distributed contact layer comprises:
Semiconductor lamination (stack) in order to luminous effect to be provided, and has one first main surface and one second main surface;
One distributed contact layer according to a predetermined distribution patterns, is formed on this this semiconductor laminated first main surface, this distributed contact layer and this semiconductor laminated formation ohmic contact; And
One transparency conducting layer, it is formed on this contact layer and this this semiconductor laminated first main surface, forms ohmic contact between this transparency conducting layer and this contact layer, and and this this semiconductor laminated first main surface between form Schottky barrier.
10. the high brightness LED with distributed contact layer according to claim 9 also comprises:
One first electrode is electrically connected with this transparency conducting layer formation; And
One second electrode is electrically connected with this second main surface formation.
11. the high brightness LED with distributed contact layer according to claim 9, wherein this distributed contact layer comprises a plurality of cylindrical contact particles, is distributed on this first main surface.
12. the high brightness LED with distributed contact layer according to claim 10, wherein this distributed contact layer comprises a plurality of cylindrical contact particles, the zone of these particles beyond under this first electrode is distributed on this first main surface.
13. the high brightness LED with distributed contact layer according to claim 9, wherein this distributed contact layer comprises many bow strips, is distributed on this first main surface.
14. the high brightness LED with distributed contact layer according to claim 10, wherein this distributed contact layer comprises many bow strips, and the zone of these bow strips beyond under this first electrode is distributed on this first main surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001186620A CN1158714C (en) | 2000-06-20 | 2000-06-20 | High-brightness LED with distributed contact layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001186620A CN1158714C (en) | 2000-06-20 | 2000-06-20 | High-brightness LED with distributed contact layer |
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| CN1330415A true CN1330415A (en) | 2002-01-09 |
| CN1158714C CN1158714C (en) | 2004-07-21 |
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| CNB001186620A Expired - Lifetime CN1158714C (en) | 2000-06-20 | 2000-06-20 | High-brightness LED with distributed contact layer |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350642C (en) * | 2004-03-26 | 2007-11-21 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
| CN100355096C (en) * | 2003-09-23 | 2007-12-12 | 晶元光电股份有限公司 | Mfg method of light-emitting component having heat absorbing layer |
| CN100359706C (en) * | 2004-03-26 | 2008-01-02 | 晶元光电股份有限公司 | Organic bonding luminous assembly with ohmic metal contact |
| US7485897B2 (en) | 2004-03-12 | 2009-02-03 | Samsung Electronics Co., Ltd. | Nitride-based light-emitting device having grid cell layer |
| US7615773B2 (en) | 2005-12-29 | 2009-11-10 | Epistar Corporation | Semiconductor light-emitting device and manufacturing method thereof |
| CN101937958A (en) * | 2010-08-23 | 2011-01-05 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency |
| CN102326265A (en) * | 2009-02-20 | 2012-01-18 | 株式会社东芝 | Semiconductor light-emitting element, semiconductor light-emitting device, and method for manufacturing semiconductor light-emitting element |
| CN102024884B (en) * | 2009-09-18 | 2013-03-06 | 晶元光电股份有限公司 | Optoelectronic semiconductor device |
| CN107017320A (en) * | 2011-08-31 | 2017-08-04 | 日亚化学工业株式会社 | Semiconductor light-emitting elements |
-
2000
- 2000-06-20 CN CNB001186620A patent/CN1158714C/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100355096C (en) * | 2003-09-23 | 2007-12-12 | 晶元光电股份有限公司 | Mfg method of light-emitting component having heat absorbing layer |
| US7485897B2 (en) | 2004-03-12 | 2009-02-03 | Samsung Electronics Co., Ltd. | Nitride-based light-emitting device having grid cell layer |
| CN100481536C (en) * | 2004-03-12 | 2009-04-22 | 三星电子株式会社 | Nitride-based light emitting device and method of manufacturing the same |
| CN100350642C (en) * | 2004-03-26 | 2007-11-21 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
| CN100359706C (en) * | 2004-03-26 | 2008-01-02 | 晶元光电股份有限公司 | Organic bonding luminous assembly with ohmic metal contact |
| US7615773B2 (en) | 2005-12-29 | 2009-11-10 | Epistar Corporation | Semiconductor light-emitting device and manufacturing method thereof |
| CN102326265A (en) * | 2009-02-20 | 2012-01-18 | 株式会社东芝 | Semiconductor light-emitting element, semiconductor light-emitting device, and method for manufacturing semiconductor light-emitting element |
| CN102326265B (en) * | 2009-02-20 | 2014-01-15 | 株式会社东芝 | Semiconductor light-emitting element, semiconductor light-emitting device, and method for manufacturing semiconductor light-emitting element |
| CN102024884B (en) * | 2009-09-18 | 2013-03-06 | 晶元光电股份有限公司 | Optoelectronic semiconductor device |
| CN101937958A (en) * | 2010-08-23 | 2011-01-05 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency |
| CN107017320A (en) * | 2011-08-31 | 2017-08-04 | 日亚化学工业株式会社 | Semiconductor light-emitting elements |
| CN107017320B (en) * | 2011-08-31 | 2019-08-09 | 日亚化学工业株式会社 | Semiconductor light-emitting elements |
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| Publication number | Publication date |
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| CN1158714C (en) | 2004-07-21 |
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Granted publication date: 20040721 |