CN113991999A - Charge pump boosting system - Google Patents
Charge pump boosting system Download PDFInfo
- Publication number
- CN113991999A CN113991999A CN202111209309.8A CN202111209309A CN113991999A CN 113991999 A CN113991999 A CN 113991999A CN 202111209309 A CN202111209309 A CN 202111209309A CN 113991999 A CN113991999 A CN 113991999A
- Authority
- CN
- China
- Prior art keywords
- voltage
- charge pump
- power supply
- module
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001914 filtration Methods 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a charge pump boosting system, comprising: the power supply module and the charge pump boosting module, the charge pump boosting module provides a judgment signal for the power supply module, the power supply module provides a starting voltage when the charge pump boosting module is started and provides a stable voltage when the charge pump boosting module works normally according to the judgment signal, and the charge pump boosting module outputs a working voltage to the rear-stage circuit. This application passes through power module is according to the judgement signal that is provided by charge pump boost module for the system can be when the low pressure starts, power module gives charge pump boost module provides required starting voltage, makes the increase in twinkling of an eye of system's consumption, makes charge pump boost module is in can the quick start to the predetermined target under the starting voltage, has shortened charge pump boost system's low pressure start-up time.
Description
Technical Field
The application relates to the technical field of charge pump boosting circuits, in particular to a charge pump boosting system.
Background
Current charge pump boost systems typically include: the power supply module is used for providing transition voltage for the charge pump boosting module, and the power supply of the power supply module is a total power supply VDDA50 provided externally.
When the low-voltage pump of the charge pump boosting system is started, the power consumption of the system is increased instantaneously, the transition voltage is reduced by a part from the total power supply VDDA50 of the power supply module due to the NMOS pipe in the power supply module, the transition voltage is recovered slowly due to the capacity of the NMOS pipe, and the time for starting the charge pump boosting module to reach the preset target under the transition voltage at the moment is longer.
Disclosure of Invention
The application provides a charge pump boosting system, which can solve the problem that the time for starting the charge pump boosting system to a preset target is long.
In one aspect, an embodiment of the present application provides a charge pump voltage boosting system, including:
the power supply module is used for providing a starting voltage or a stable voltage for the rear-stage circuit; and the number of the first and second groups,
the charge pump boosting module is used for providing a judgment signal for the power supply module, receiving the starting voltage or the stable voltage and outputting a working voltage to a post-stage circuit;
the power supply module provides the starting voltage when the charge pump boosting module is started according to the judgment signal and provides the stable voltage when the charge pump boosting module works normally.
Optionally, in the charge pump boosting system, the power supply module includes: the power supply comprises a first power supply, a second power supply, a first NMOS tube and a PMOS tube, wherein the first NMOS tube is connected with the PMOS tube in parallel, the positive end of the first power supply is respectively connected with the drain electrode of the first NMOS tube and the source electrode of the PMOS tube, the negative end of the first power supply is connected with the grid electrode of the first NMOS tube, the parallel node position of the source electrode of the first NMOS tube and the drain electrode of the PMOS tube outputs the starting voltage or the stable voltage to the charge pump boosting module and is connected with the positive end of the second power supply, and the negative end of the second power supply is grounded.
Optionally, in the charge pump boosting system, the power supply module further includes: the drain electrode of the second NMOS tube is connected with the negative electrode end of the first power supply, the grid electrode of the second NMOS tube is connected with the drain electrode of the second NMOS tube, the source electrode of the second NMOS tube is connected with the emitting electrode of the PNP transistor, and the collector electrode of the PNP transistor and the base electrode of the PNP transistor are both grounded.
Optionally, in the charge pump boosting system, the charge pump boosting module includes: the voltage comparison unit and the voltage boosting unit are connected with the starting voltage or the stable voltage output by the power supply module, a first input end of the clock unit receives an external clock signal, the clock unit outputs a control signal to the voltage boosting unit, the voltage boosting unit outputs the working voltage to a rear-stage circuit according to the control signal, a first input end of the voltage comparison unit is connected with the working voltage, a second input end of the voltage comparison unit is connected with an external reference voltage, and an output end of the voltage comparison unit is respectively connected with a grid electrode of a PMOS (P-channel metal oxide semiconductor) tube of the power supply module and a second input end of the clock unit so as to provide the judgment signal for the power supply module and the clock unit.
Optionally, in the charge pump voltage boosting system, the charge pump voltage boosting module further includes: and one end of the voltage division unit is connected with the working voltage, the other end of the voltage division unit is grounded, and the middle end of the voltage division unit is connected with the first input end of the voltage comparison unit so as to provide a regulating voltage for the first input end of the voltage comparison unit.
Optionally, in the charge pump boosting system, the voltage dividing unit includes: a plurality of resistors connected in series.
Optionally, in the charge pump voltage boosting system, the charge pump voltage boosting module further includes: and one end of the filtering unit is connected with the working voltage, and the other end of the filtering unit is grounded so as to eliminate interference signals in the working voltage.
The technical scheme at least comprises the following advantages:
according to the charge pump boosting system, the power supply module provides a judgment signal according to the charge pump boosting module, so that the system can be started at low voltage, the power supply module provides starting voltage for the charge pump boosting module, the power consumption of the system is increased instantly, the charge pump boosting module can be started to a preset target at the starting voltage quickly, and the low-voltage starting time of the charge pump boosting system is greatly shortened. Further, after the working voltage output by the charge pump boosting module reaches a set target, the power supply module provides a stable voltage for the charge pump boosting module according to the judgment signal, so that the charge pump boosting system is not influenced by abnormal fluctuation of an external power supply of the power supply module, and the reliability of the system is improved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a circuit schematic of a charge pump boost system according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a power supply module according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a charge pump boost module according to an embodiment of the present invention;
wherein the reference numerals are as follows:
10-power supply module, 20-charge pump boost module.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a charge pump boosting system according to an embodiment of the present invention, where the charge pump boosting system includes: a power supply module 10 and a charge pump boost module 20. The power supply module 10 is used for providing a starting voltage VDDI1 or a stable voltage VDDI2 for the charge pump boosting module 20 of the subsequent stage; the charge PUMP boosting module 20 is configured to provide a determination signal PUMP to the power supply module 10, receive the starting voltage VDDI1 or the steady voltage VDDI2, and output a working voltage VPOS to the subsequent stage circuit; wherein, the power supply module 10 provides the starting voltage VDDI1 when the charge PUMP boost module 20 is started and provides the smoothing voltage VDDI2 when the charge PUMP boost module 20 is normally operated according to the determination signal PUMP.
Specifically, referring to fig. 2 and fig. 3, fig. 2 is a schematic structural diagram of a power supply module according to an embodiment of the present invention, and fig. 3 is a schematic structural diagram of a charge pump boosting module according to an embodiment of the present invention.
As shown in fig. 2, the power supply module 10 includes: a first power supply VDDA50, a second power supply VDD2, a first NMOS transistor N1 and a PMOS transistor P1, wherein the first NMOS transistor N1 and the PMOS transistor P1 are connected in parallel, a positive terminal of the first power supply VDDA50 is connected to a drain of the first NMOS transistor N1 and a source of the PMOS transistor P1, respectively, a negative terminal of the first power supply VDDA50 is connected to a gate of the first NMOS transistor N1, a parallel node position of the source of the first NMOS transistor N1 and the drain of the PMOS transistor P1 outputs the start voltage VDDI1 or the steady voltage VDDI2 to the charge pump boost module and is connected to a positive terminal of the second power supply VDD2, and a negative terminal of the second power supply VDD2 is grounded vgnd.
Preferably, the power supply module 10 further includes: a second NMOS transistor N2 and a PNP transistor T, wherein the drain of the second NMOS transistor N2 is connected to the negative terminal of the first power supply VDDA50, the gate of the second NMOS transistor N2 is connected to the drain of the second NMOS transistor N2, the source of the second NMOS transistor N2 is connected to the emitter of the PNP transistor T, and the collector of the PNP transistor T and the base of the PNP transistor T are both grounded vgnd.
As shown in fig. 3, the charge pump boosting module 20 includes: a voltage comparison unit COMP, a clock unit PCLK BLOCK and a voltage Boost unit VPOS Boost Stage, wherein the clock unit PCLK BLOCK and the voltage Boost unit VPOS Boost Stage are connected to the start voltage VDDI1 or the steady voltage VDDI2 output by the power supply module 10, a first input end of the clock unit PCLK BLOCK receives an external clock signal PCLK, the clock unit PCLK BLOCK outputs a control signal to the voltage Boost unit VPOS Boost Stage, the voltage Boost unit VPOS Boost Stage outputs the working voltage VPOS to a post-Stage circuit according to the control signal, a first input end of the voltage comparison unit COMP is connected to the working voltage VPOS, a second input end of the voltage comparison unit COMP is connected to an external reference voltage VREF, and output ends of the voltage comparison unit COMP are respectively connected to a gate of a PMOS transistor P1 of the power supply module 10 and a second input end of the clock unit PCLK BLOCK to provide the power supply module 10 and the clock unit PCLK BLOCK with the determination Signal PUMP.
As shown in fig. 1, the first NMOS transistor N1 and the PMOS transistor P1 of the power supply module 10 are connected in parallel, and the determination signal PUMP output by the voltage comparison unit COMP of the charge PUMP boost module 20 is connected to the gate of the PMOS transistor P1 of the power supply module 10. When the charge PUMP boost module 20 is started and outputs the working voltage VPOS, the working voltage VPOS is divided to obtain the regulated voltage DIV, the regulated voltage DIV is compared with the reference voltage VREF input from the outside through the voltage comparison unit COMP, and the voltage comparison unit COMP outputs a determination signal PUMP (equivalent to a low-voltage start signal) to the power supply module 10 to control whether the power supply module 10 outputs the start voltage VDDI1 or the steady voltage VDDI2, and also outputs a determination signal PUMP to the clock unit PCLK BLOCK to control the switching of the clock unit PCLK BLOCK. The gate of the PMOS transistor P1 of the power supply module 10 receives the determination signal PUMP output by the voltage comparison unit COMP of the charge PUMP boost module 20, when the low voltage PUMP is started, the determination signal PUMP is equal to 0 (low level), the PMOS transistor P1 is turned on, the power consumption of the system can be increased instantaneously, and at this time, the first power supply VDDA50 passes through the first NMOS transistor N1 and the PMOS transistor without being limited by the capability of the first NMOS transistor N1, the power supply module 10 outputs the starting voltage VDDI1 to the clock unit PCLK BLOCK and the boosting unit VPOS Boost Stage of the charge pump boosting module 20, speeding up the recovery of the starting voltage VDDI1 to the plateau voltage VDDI2, the charge pump boosting module 20 can be quickly started to a preset target under the starting voltage VDDI1, and the low-voltage starting time of the charge pump boosting system is greatly shortened. Further, after the operating voltage VPOS reaches a predetermined target, it is determined that the signal PUMP is 1 (high level), the PMOS transistor P1 is turned off, and the first power supply VDDA50 passes through the first NMOS transistor N1, so that the power supply module 10 outputs a steady voltage VDDI2 to the clock unit PCLK BLOCK and the voltage boosting unit VPOS Boost Stage of the charge PUMP voltage boosting module 20, the operating voltage VPOS will be maintained at the predetermined target, power consumption will be steady, the system is not affected by abnormal fluctuation of the first power supply VDDA50, and reliability of the system is improved.
Preferably, the charge pump boosting module 20 may further include: one end of the voltage dividing unit S is connected to the working voltage VPOS, the other end of the voltage dividing unit S is grounded vgnd, and the middle end of the voltage dividing unit S is connected to the first input end of the voltage comparing unit COMP to provide an adjusting voltage DIV to the first input end of the voltage comparing unit COMP. In this embodiment, the voltage dividing unit S may include: and the plurality of resistors are connected in series, and divide the working voltage VPOS (regulated voltage DIV) through the plurality of resistors and provide the divided voltage to the first input end of the voltage comparison unit COMP.
Further, the charge pump boosting module 20 may further include: and the filtering unit C is a filtering capacitor, one end of the filtering unit C is connected with the working voltage VPOS, and the other end of the filtering unit C is grounded vgnd so as to eliminate interference signals in the working voltage VPOS.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (7)
1. A charge pump boost system, comprising:
the power supply module is used for providing a starting voltage or a stable voltage for the rear-stage circuit; and the number of the first and second groups,
the charge pump boosting module is used for providing a judgment signal for the power supply module, receiving the starting voltage or the stable voltage and outputting a working voltage to a post-stage circuit;
the power supply module provides the starting voltage when the charge pump boosting module is started according to the judgment signal and provides the stable voltage when the charge pump boosting module works normally.
2. The charge pump boosting system according to claim 1, wherein the power supply module comprises: the power supply comprises a first power supply, a second power supply, a first NMOS tube and a PMOS tube, wherein the first NMOS tube is connected with the PMOS tube in parallel, the positive end of the first power supply is respectively connected with the drain electrode of the first NMOS tube and the source electrode of the PMOS tube, the negative end of the first power supply is connected with the grid electrode of the first NMOS tube, the parallel node position of the source electrode of the first NMOS tube and the drain electrode of the PMOS tube outputs the starting voltage or the stable voltage to the charge pump boosting module and is connected with the positive end of the second power supply, and the negative end of the second power supply is grounded.
3. The charge pump boosting system according to claim 2, wherein the power supply module further comprises: the drain electrode of the second NMOS tube is connected with the negative electrode end of the first power supply, the grid electrode of the second NMOS tube is connected with the drain electrode of the second NMOS tube, the source electrode of the second NMOS tube is connected with the emitting electrode of the PNP transistor, and the collector electrode of the PNP transistor and the base electrode of the PNP transistor are both grounded.
4. The charge pump boost system of claim 3, wherein said charge pump boost module comprises: the voltage comparison unit and the voltage boosting unit are connected with the starting voltage or the stable voltage output by the power supply module, a first input end of the clock unit receives an external clock signal, the clock unit outputs a control signal to the voltage boosting unit, the voltage boosting unit outputs the working voltage to a rear-stage circuit according to the control signal, a first input end of the voltage comparison unit is connected with the working voltage, a second input end of the voltage comparison unit is connected with an external reference voltage, and an output end of the voltage comparison unit is respectively connected with a grid electrode of a PMOS (P-channel metal oxide semiconductor) tube of the power supply module and a second input end of the clock unit so as to provide the judgment signal for the power supply module and the clock unit.
5. The charge pump boost system of claim 4, wherein said charge pump boost module further comprises: and one end of the voltage division unit is connected with the working voltage, the other end of the voltage division unit is grounded, and the middle end of the voltage division unit is connected with the first input end of the voltage comparison unit so as to provide a regulating voltage for the first input end of the voltage comparison unit.
6. The charge pump boosting system according to claim 5, wherein the voltage dividing unit comprises: a plurality of resistors connected in series.
7. The charge pump boost system of claim 4, wherein said charge pump boost module further comprises: and one end of the filtering unit is connected with the working voltage, and the other end of the filtering unit is grounded so as to eliminate interference signals in the working voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111209309.8A CN113991999B (en) | 2021-10-18 | 2021-10-18 | Charge pump boosting system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111209309.8A CN113991999B (en) | 2021-10-18 | 2021-10-18 | Charge pump boosting system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113991999A true CN113991999A (en) | 2022-01-28 |
| CN113991999B CN113991999B (en) | 2024-02-06 |
Family
ID=79739097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111209309.8A Active CN113991999B (en) | 2021-10-18 | 2021-10-18 | Charge pump boosting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113991999B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115833576A (en) * | 2022-12-19 | 2023-03-21 | 珠海极海半导体有限公司 | Low-power consumption control circuit and micro-processing chip |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070252639A1 (en) * | 2004-05-12 | 2007-11-01 | Tpo Displays Corp. | Charge Pump Circuit and Electronic Circuit Provided Therewith, and Method for Driving Charge Pump Circuit |
| US20090167418A1 (en) * | 2007-10-24 | 2009-07-02 | Vijay Raghavan | Supply Regulated Charge Pump System |
| US20110025379A1 (en) * | 2009-08-03 | 2011-02-03 | Freescale Semiconductor, Inc. | Latched comparator and methods therefor |
| CN102263500A (en) * | 2010-05-27 | 2011-11-30 | 上海宏力半导体制造有限公司 | Charge pump circuit |
| CN104022641A (en) * | 2014-06-05 | 2014-09-03 | 辉芒微电子（深圳）有限公司 | Charge pump circuit capable of preventing overshooting and being started fast and overshooting preventing and fast starting method thereof |
| US8917136B1 (en) * | 2014-01-10 | 2014-12-23 | Freescale Semiconductor, Inc. | Charge pump system and method of operation |
| US20150309518A1 (en) * | 2014-04-25 | 2015-10-29 | Miten H. Nagda | Charge pump ldo with secondary sensing for low power need based refresh |
| CN206461518U (en) * | 2016-12-29 | 2017-09-01 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit |
| CN108390556A (en) * | 2018-04-27 | 2018-08-10 | 电子科技大学 | A kind of charge pump circuit |
| CN108733119A (en) * | 2017-04-25 | 2018-11-02 | 恩智浦有限公司 | Low dropout voltage regulator and its startup method |
| US20190165669A1 (en) * | 2017-11-27 | 2019-05-30 | Globalfoundries Inc. | Charge pump circuit with built-in retry |
| US20200136502A1 (en) * | 2018-10-26 | 2020-04-30 | Nxp B.V. | Multi-stage charge pump regulation architecture |
| CN111326203A (en) * | 2018-12-17 | 2020-06-23 | 北京兆易创新科技股份有限公司 | Circuit for controlling voltage ripple |
| CN111600481A (en) * | 2020-07-23 | 2020-08-28 | 江苏长晶科技有限公司 | Voltage boosting and reducing control system of power supply and control method thereof |
| CN112187042A (en) * | 2020-09-28 | 2021-01-05 | 合肥恒烁半导体有限公司 | Charge pump regulating circuit and application thereof |
| CN112256081A (en) * | 2020-10-27 | 2021-01-22 | 电子科技大学 | Low dropout regulator with self-adaptive charge pump |
| CN112821751A (en) * | 2021-02-03 | 2021-05-18 | 江阴元灵芯旷微电子技术有限公司 | Power management chip self-adaptive boosting method, system and circuit |
| CN113315369A (en) * | 2021-07-09 | 2021-08-27 | 北京紫光青藤微系统有限公司 | Charge pump circuit |
-
2021
- 2021-10-18 CN CN202111209309.8A patent/CN113991999B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070252639A1 (en) * | 2004-05-12 | 2007-11-01 | Tpo Displays Corp. | Charge Pump Circuit and Electronic Circuit Provided Therewith, and Method for Driving Charge Pump Circuit |
| US20090167418A1 (en) * | 2007-10-24 | 2009-07-02 | Vijay Raghavan | Supply Regulated Charge Pump System |
| US20110025379A1 (en) * | 2009-08-03 | 2011-02-03 | Freescale Semiconductor, Inc. | Latched comparator and methods therefor |
| CN102263500A (en) * | 2010-05-27 | 2011-11-30 | 上海宏力半导体制造有限公司 | Charge pump circuit |
| US8917136B1 (en) * | 2014-01-10 | 2014-12-23 | Freescale Semiconductor, Inc. | Charge pump system and method of operation |
| US20150309518A1 (en) * | 2014-04-25 | 2015-10-29 | Miten H. Nagda | Charge pump ldo with secondary sensing for low power need based refresh |
| CN104022641A (en) * | 2014-06-05 | 2014-09-03 | 辉芒微电子（深圳）有限公司 | Charge pump circuit capable of preventing overshooting and being started fast and overshooting preventing and fast starting method thereof |
| CN206461518U (en) * | 2016-12-29 | 2017-09-01 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit |
| CN108733119A (en) * | 2017-04-25 | 2018-11-02 | 恩智浦有限公司 | Low dropout voltage regulator and its startup method |
| US20190165669A1 (en) * | 2017-11-27 | 2019-05-30 | Globalfoundries Inc. | Charge pump circuit with built-in retry |
| CN108390556A (en) * | 2018-04-27 | 2018-08-10 | 电子科技大学 | A kind of charge pump circuit |
| US20200136502A1 (en) * | 2018-10-26 | 2020-04-30 | Nxp B.V. | Multi-stage charge pump regulation architecture |
| CN111326203A (en) * | 2018-12-17 | 2020-06-23 | 北京兆易创新科技股份有限公司 | Circuit for controlling voltage ripple |
| CN111600481A (en) * | 2020-07-23 | 2020-08-28 | 江苏长晶科技有限公司 | Voltage boosting and reducing control system of power supply and control method thereof |
| CN112187042A (en) * | 2020-09-28 | 2021-01-05 | 合肥恒烁半导体有限公司 | Charge pump regulating circuit and application thereof |
| CN112256081A (en) * | 2020-10-27 | 2021-01-22 | 电子科技大学 | Low dropout regulator with self-adaptive charge pump |
| CN112821751A (en) * | 2021-02-03 | 2021-05-18 | 江阴元灵芯旷微电子技术有限公司 | Power management chip self-adaptive boosting method, system and circuit |
| CN113315369A (en) * | 2021-07-09 | 2021-08-27 | 北京紫光青藤微系统有限公司 | Charge pump circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115833576A (en) * | 2022-12-19 | 2023-03-21 | 珠海极海半导体有限公司 | Low-power consumption control circuit and micro-processing chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113991999B (en) | 2024-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20150061621A1 (en) | Low drop-out regulator with a current control circuit | |
| CN101421683A (en) | Low-dropout voltage regulator with a voltage slew rate efficient transient response boost circuit | |
| JP2009106058A (en) | Selector circuit and electronic equipment using the same | |
| WO2009078345A1 (en) | Constant voltage circuit | |
| CN107272818B (en) | A kind of high voltage band-gap reference circuit structure | |
| CN113991999A (en) | Charge pump boosting system | |
| CN101175346A (en) | Backlight control circuit capable of automatically adjusting voltage and control method for luminous element | |
| US9276464B2 (en) | Voltage generation circuit using single and double regulation modes | |
| CN115617116B (en) | Current source circuit, system, chip and electronic equipment | |
| CN117811173B (en) | Circuit for reducing overshoot current | |
| KR100611295B1 (en) | Power supply circuit | |
| CN113507772A (en) | Hysteresis circuit, emergency lighting circuit and lighting equipment | |
| US20100156512A1 (en) | Charge pump controller and method therefor | |
| US11799376B2 (en) | Buck-boost circuit and control method | |
| US6339264B1 (en) | Apparatus and method for forecasting output voltage of a battery of a digital camera | |
| JP2004153931A (en) | Multi-output power supply device | |
| CN215991299U (en) | Hysteresis circuit, emergency lighting circuit and lighting equipment | |
| CN114285152B (en) | Multi-power-supply chip power supply switching circuit | |
| CN115840484A (en) | Linear voltage-stabilized power supply and power supply system | |
| CN113672025B (en) | Power supply circuit, chip and earphone | |
| CN112968599B (en) | Time sequence control method and circuit for linear device and switch device | |
| TWI704439B (en) | Start-up circuit and operation method thereof | |
| JP2011229279A (en) | Charging control device | |
| JP2018072234A (en) | Voltage detection device | |
| CN112489711A (en) | Circuit for relieving insufficient driving capability at moment of chip active mode starting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |