CN113133174A - Helicon-ion cyclotron resonance coupling discharge system - Google Patents
Helicon-ion cyclotron resonance coupling discharge system Download PDFInfo
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- 238000005859 coupling reaction Methods 0.000 title claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 238000009792 diffusion process Methods 0.000 claims abstract description 55
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000005284 excitation Effects 0.000 claims abstract description 23
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H—ELECTRICITY
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a helicon wave-ion cyclotron resonance coupling discharge system which structurally comprises an air inlet pipeline (1), an air inlet seal (2), a helicon wave discharge chamber (3), a discharge tube (4), a helicon wave antenna (5), an isolation plate (6), an ion cyclotron heating chamber (7), an ion cyclotron antenna (8), a diffusion partition plate (9), a diffusion seal (10), a diffusion chamber (11), a diffusion pump port (12), a magnet coil (13) and an antenna pump port (14). The system realizes the integration of ionization excitation and heating of high-density and high-temperature plasmas. The plasma excitation antenna and the heating antenna are arranged in a vacuum environment, power loss of the antennas is effectively reduced, safety of equipment operation is improved, physical isolation is arranged between the plasma excitation antenna and the heating antenna, mutual interference of electromagnetic waves of the plasma excitation antenna and the heating antenna can be effectively reduced, and plasma coupling efficiency is improved. By adjusting the power ratio of excitation and heatingControlling plasma electron density 1015‑1019m‑3Ion temperature 0-100eV, pulsed/continuous discharge.
Description
Technical Field
The invention relates to a coupling discharge technology applied to high-density plasma excitation-heating, in particular to a helicon wave-ion cyclotron resonance coupling discharge system.
Background
Plasma, as a fourth state of matter, is also one of the main technologies of energy accumulation and industrial development, and has been receiving attention from scientific research institutes and enterprises in all countries of the world in recent years. The electron density and ion energy in the plasma are used as main technical indexes for measuring the plasma state, and are always the continuous breakthrough direction in the research field of the plasma source. High-density plasma is mainly obtained by ionizing a discharge gas by means of direct current, radio frequency, microwave, laser, and the like. However, due to the influence of ionization rate and discharge parameters, the helicon plasma, as a discharge mode that can theoretically obtain 100% ionization rate, becomes one of the important research directions for the development of high-density plasma sources in the future. On the other hand, due to the large difference between the electron and ion masses, it is difficult to obtain a high electron density and a high ion temperature at the same time, the ion temperature generated by the high-density helicon plasma is only close to room temperature (0.025eV), and the current means for heating the ions mainly obtains the high ion temperature by applying a bias voltage to the grid mesh. However, obtaining ion temperature in this manner is affected by the lifetime of the grid. The plasma bombards the grid causing it to etch and contaminate the plasma. This is unacceptable for the semiconductor industry, for example, for the need for high purity plasmas. In addition, plasma heating by electrodeless microwave has been applied to plasma research, and the microwave heating method has a relatively significant effect on electron heating, and a relatively high ion temperature is obtained by the collision of thermal electrons and ions, which has a relatively low heating efficiency.
According to the background of the above research, the present invention provides a helicon-ion cyclotron resonance coupled discharge system. The system adopts a sectional design, the generation, the heating and the diffusion of a plasma source are independently operated, and the three sections are connected through plasma. The system realizes helicon wave plasma source and ion returnThe rotary working heating module is coupled, which is beneficial to obtaining higher electron density (10)15-1019m-3) And ion temperature (0-100 eV). The system can distribute power to the plasma excitation and heating processes according to the working condition requirements, thereby realizing continuous adjustment of electron density and ion temperature. The plasma excitation and heating antennas are both placed in a vacuum environment, and the plasma is not in contact with the antennas, without the risk of electrode ablation. Meanwhile, the discharge system has the advantages of multi-mode discharge and high repeatability, has different plasma density grades, can perform pulse or continuous discharge, and has higher practical value and research value for industrial application and plasma research.
Disclosure of Invention
The invention aims to make up the defects of the prior art and provides a helicon-ion cyclotron resonance coupled discharge system.
The invention is realized by the following technical scheme:
in the invention, discharge gas enters the helicon wave discharge chamber through the gas flow controller, a radio frequency mechanism with the frequency of 13.56MHz is connected into the helicon wave antenna through a feed port, and the structure of the antenna can be (m is 1, m is 0 or m is-1) that the helicon wave antenna excites a spatially distributed electromagnetic field and forms a helicon wave discharge area. The discharge gas enters the region and is excited into high-density plasma under the action of the electromagnetic field of the helicon wave and the static magnetic field provided by the coil, and the electron density is 1015-1019m-3The ion temperature is close to room temperature, 0.025 eV. The electron density is adjusted with the feed power of the helicon wave, the background magnetic field and the air input. The plasma discharge mode generates jump of different modes of capacitive coupling (E mode), inductive coupling (H mode), spiral wave coupling (W1 mode), spiral wave coupling (W2 mode) and spiral wave coupling (W3 mode), so that the multi-mode discharge of the plasma is realized, and the plasma generated by the discharge is diffused to an ion cyclotron resonance heating zone in a discharge tube. Ions in the plasma generate cyclotron resonance and transfer energy under the action of an electromagnetic field of the ion cyclotron heating antenna and a background magnetic field. The temperature of the ions can reach 0-100eV after being heated, and the temperature of the heated target ions is fed along with the temperatureThe heating power and the background magnetic field are regulated and controlled. The plasma passes through an ion cyclotron heating zone and then enters a diffusion chamber, and the electron density of 10 can be obtained in the diffusion chamber15-1019m-3Plasma with ion temperature of 0-100 eV. The diffusion cavity can be used for carrying out high-density and high-temperature plasma mechanism research, plasma propulsion, material etching, spraying and other related researches.
The invention provides a helicon wave-ion cyclotron resonance coupling discharge system which comprises an air inlet pipeline 1, an air inlet seal 2, a helicon wave discharge chamber 3, a discharge tube 4, a helicon wave antenna 5, an isolation plate 6, an ion cyclotron heating chamber 7, an ion cyclotron antenna 8, a diffusion partition plate 9, a diffusion seal 10, a diffusion chamber 11, a diffusion pump port 12, a magnet coil 13 and an antenna pump port 14. The system mainly comprises a helicon wave discharge chamber 3, an ion convolution heating chamber 7 and a diffusion chamber 11, wherein one end of the helicon wave discharge chamber 3 is provided with an air inlet pipeline 1, and the joint of the air inlet pipeline 1 and the helicon wave discharge chamber 3 is provided with an air inlet seal 2; a discharge tube 4 and a helical wave antenna 5 are arranged in the helical wave discharge chamber 3; the side of the isolation plate 6 connected with the antenna is divided into a spiral wave discharge chamber 3 and an ion rotary heating chamber 7, and an ion rotary antenna 8 is arranged in the ion rotary heating chamber 7; the diffusion chamber 11 is isolated from the helicon wave discharge chamber 3 and the ion convolution heating chamber 7 in vacuum through a diffusion partition plate 9 and a diffusion seal 10; one side of the diffusion chamber 11 is provided with a diffusion pump port 12; the outer sides of the helicon wave discharge chamber 3 and the ion rotary heating chamber 7 are all surrounded with a magnet coil 13; one side of the helicon wave discharge chamber 3 is provided with an antenna pump port 14.
The helicon wave-ion cyclotron resonance coupled discharge system has a sectional structure for plasma excitation, heating and diffusion. The structure is beneficial to reducing the interference of heating and excitation and improving the resonance coupling efficiency.
According to the helicon wave-ion cyclotron resonance coupling discharge system, the helicon wave antenna and the ion cyclotron heating antenna are both arranged in a vacuum environment. The structural design avoids discharge ignition between the antenna and the vacuum chamber, and has higher safety.
The spiral wave-ion cyclotron resonance coupled discharge system realizes pulse or continuous multi-mode discharge through efficient coupling of spiral wave-ion cyclotron heating.
The plasma diffusion cavity of the helicon-ion cyclotron resonance coupled discharge system obtains an electron density of 1015-1019m-3Plasma with ion temperature of 0-100 eV. The plasma has repeatability and can be used for plasma mechanism research and industrial application.
In the plasma source discharge process, the plasma excitation and heating system adopts a three-section design through a helicon-ion cyclotron resonance coupling discharge system, mainly comprises a helicon discharge chamber, an ion cyclotron heating chamber and a plume diffusion chamber from right to left, plasma penetrates through a plasma excitation cavity, a plasma heating cavity and a plasma diffusion cavity in a discharge tube, and physical isolation is arranged between the plasma excitation and the plasma heating cavity, so that the mutual interference of electromagnetic waves between the plasma excitation and the plasma heating cavity can be reduced. By adjusting the power ratio between excitation and heating, a plasma electron density of 10 can be achieved15-1019m-3And the ion temperature is controlled in multiple modes of 0-100 eV.
The invention has the advantages that:
compared with the conventional plasma discharge system, the plasma ionization excitation and heating integration system realizes high-density and high-temperature plasma ionization excitation and heating integration. The plasma excitation antenna and the heating antenna are arranged in a vacuum environment, power loss of the antennas is effectively reduced, safety of equipment operation is improved, meanwhile, physical isolation is arranged between the plasma excitation antenna and the heating antenna, mutual interference of electromagnetic waves of the plasma excitation antenna and the heating antenna can be effectively reduced, and improvement of plasma coupling efficiency is facilitated. The non-contact electrode discharge is realized by adopting a helicon wave + ion cyclotron resonance heating mode, the etching damage of the plasma to the equipment is avoided, the service life of the equipment is prolonged, and the electron density 10 of the plasma can be controlled by adjusting the power ratio of excitation to heating15-1019m-3Ion temperature 0-100eV, pulsed/continuous discharge.
Drawings
Fig. 1 is a schematic structural diagram of a helicon-ion cyclotron resonance coupled discharge system according to the present invention.
In fig. 1, 1 air inlet pipe, 2 air inlet seal, 3 helicon wave discharge chamber, 4 discharge tube, 5 helicon wave antenna, 6 isolation board, 7 ion rotary heating chamber, 8 ion rotary antenna, 9 diffusion baffle, 10 diffusion seal, 11 diffusion chamber, 12 diffusion pump port, 13 magnet coil, 14 antenna pump port.
Detailed Description
See the drawings.
The present invention is described in further detail below with reference to fig. 1 and the specific examples. The helicon-mrc discharge system of the present invention is not limited to specific materials or processes, and the following examples are only one embodiment of the present invention and are not intended to limit the scope of the present invention, and any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
As shown in fig. 1, a helicon-ion cyclotron resonance coupled discharge system, the system comprising: the device comprises an air inlet pipeline 1, an air inlet seal 2, a helicon wave discharge chamber 3, a discharge tube 4, a helicon wave antenna 5, a partition plate 6, an ion rotary heating chamber 7, an ion rotary antenna 8, a diffusion partition plate 9, a diffusion seal 10, a diffusion chamber 11, a diffusion pump port 12, a magnet coil 13 and an antenna pump port 14. The system mainly comprises a helicon wave discharge chamber 3, an ion rotary heating chamber 7 and a plume diffusion chamber 11 from right to left. One end of the helicon wave discharge chamber 3 is provided with an air inlet pipeline 1, and the joint of the air inlet pipeline 1 and the helicon wave discharge chamber 3 is provided with an air inlet seal 2; a discharge tube 4 and a helical antenna 5 are provided in the helical discharge chamber 3. The isolation board 6 is divided into a spiral wave discharge chamber 3 and an ion rotary heating chamber 7 at the side connected with the antenna, and an ion rotary antenna 8 is arranged in the ion rotary heating chamber 7. The diffusion chamber is isolated from the helicon wave discharge chamber and the ion convolution heating chamber in vacuum through a diffusion partition plate 9 and a diffusion seal 10. One side of the diffusion chamber 11 is provided with a diffusion pump port 12; the outer sides of the helicon wave discharge chamber 3 and the ion rotary heating chamber 7 are all surrounded with a magnet coil 13; one side of the helicon wave discharge chamber 3 is provided with an antenna pump port 14.
The gas inlet seal 2 and the diffusion seal 10 are sealing measures for realizing the sealing between the discharge tube 4 and the helicon wave discharge chamber 3, the ion rotary heating chamber 7 and the diffusion chamber 11;
the discharge tube 4 is a plasma discharge channel, and the inside and the outside of the discharge tube are insulated and sealed;
the spiral wave discharge chamber 3 is communicated with the ion rotary heating chamber 7 and is connected through a through hole in the middle of the isolation plate 6;
the upper helical wave antenna 5 and the ion cyclotron heating antenna 8 are positioned in a vacuum environment, and the antenna has no limit to the structure of the antenna;
the baffle 6 realizes the shielding of an electromagnetic field, and reduces the electromagnetic interference of spiral waves and ion cyclotron heating;
the diffusion partition plate 9 and the diffusion seal 10 realize the excitation of plasma, the heating of the antenna and the sealing and insulation between the plasma, the etching of the plasma on the antenna and the equipment main body is avoided, and the service life of the equipment is prolonged;
the diffusion cavity 11 is an outlet of high electron density and ion temperature plasma, and can be used for developing the mechanism research and related tests of the plasma;
the diffusion pump port 12 is a pump set connecting port of a diffusion area and is used for obtaining vacuum in the diffusion chamber 11 and the discharge tube 4;
the magnet coil 13 provides a background magnetic field for plasma excitation and heating;
the antenna pump port 14 provides a vacuum environment for the spiral wave and ion convolution antenna area, which is beneficial to reducing the ignition phenomenon of the antenna and improving the safety of the experiment.
The invention can realize the discharge and heating of the plasma at the same time, and ensure that the density of the plasma is more than 1018m-3The temperature of ions in the plasma is significantly increased by ion cyclotron heating under the conditions (1). The three-section structure design is beneficial to reducing the interference of different radio frequency systems, improving the stability of the system and simultaneously improving the coupling efficiency of waves and plasmas. The high-density and high-temperature plasma obtained by the system can be used in the fields of interaction of the plasma and materials, plasma etching, sputtering, plasma propelling and the like. Has wide application prospect.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and the preferred embodiments are not exhaustive and do not limit the invention to the precise embodiments described. Various modifications and improvements of the technical solution of the present invention may be made by those skilled in the art without departing from the spirit of the present invention, and the technical solution of the present invention is to be covered by the protection scope defined by the claims.
Claims (5)
1. A helicon wave-ion cyclotron resonance coupling discharge system is characterized by comprising an air inlet pipeline (1), an air inlet seal (2), a discharge tube (4), a helicon wave antenna (5), an isolation plate (6), an ion cyclotron antenna (8), a diffusion partition plate (9), a diffusion seal (10), a diffusion pump port (12), a magnet coil (13) and an antenna pump port (14) which are arranged in sequence; the system mainly comprises a helicon wave discharge chamber (3), an ion convolution heating chamber (7) and a diffusion chamber (11), wherein one end of the helicon wave discharge chamber (3) is provided with an air inlet pipeline (1), and an air inlet seal (2) is arranged at the joint of the air inlet pipeline (1) and the helicon wave discharge chamber (3); a discharge tube (4) and a helical wave antenna (5) are arranged in the helical wave discharge chamber (3); the isolation plate (6) is connected with the antenna side and is divided into a spiral wave discharge chamber (3) and an ion rotary heating chamber (7), and an ion rotary antenna (8) is arranged in the ion rotary heating chamber (7); the diffusion chamber (11) is isolated from the spiral wave discharge chamber (3) and the ion convolution heating chamber (7) in vacuum through a diffusion partition plate (9) and a diffusion seal (10); a diffusion pump opening (12) is formed in one side of the diffusion chamber (11); the outsides of the helicon wave discharge chamber (3) and the ion rotary heating chamber (7) are all surrounded with magnet coils (13); an antenna pump opening (14) is arranged on one side of the spiral wave discharge chamber (3).
2. The helicon-wave-ion cyclotron resonance coupled discharge system of claim 1, wherein: plasma excitation, heating and diffusion are carried out in a segmented structure.
3. The helicon-wave-ion cyclotron resonance coupled discharge system of claim 1, wherein: the helical wave antenna and the ion cyclotron heating antenna are both arranged in a vacuum environment.
4. The helicon-wave-ion cyclotron resonance coupled discharge system of claim 2, wherein: and pulse or continuous multi-mode discharge is realized through the high-efficiency coupling of the spiral wave-ion cyclotron heating.
5. The helicon-wave-ion cyclotron resonance coupled discharge system of claim 1, wherein: the plasma diffusion chamber obtains an electron density of 1015-1019m-3Plasma with ion temperature of 0-100 eV.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116133224A (en) * | 2023-04-13 | 2023-05-16 | 安徽曦融兆波科技有限公司 | Resonant antenna device for exciting high-power helicon wave plasma |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144422A (en) * | 1998-09-08 | 2000-05-26 | Mitsubishi Heavy Ind Ltd | Silicon film forming method and silicon film forming device |
| US20100055345A1 (en) * | 2008-08-28 | 2010-03-04 | Costel Biloiu | High density helicon plasma source for wide ribbon ion beam generation |
| CN103915310A (en) * | 2012-12-28 | 2014-07-09 | 东京毅力科创株式会社 | Plasma processing container and plasma processing device |
| CN104653422A (en) * | 2015-01-22 | 2015-05-27 | 大连理工大学 | Three-level acceleration type spiral wave plasma propulsion device |
| CN106304599A (en) * | 2016-09-29 | 2017-01-04 | 成都真火科技有限公司 | A kind of sealing structure for high-power laminar flow arc-plasma beam generator |
| CN106385756A (en) * | 2016-09-21 | 2017-02-08 | 北京机械设备研究所 | Electric arc heating type helicon wave plasma electric propulsion device |
| CN109302791A (en) * | 2018-10-26 | 2019-02-01 | 中国科学院合肥物质科学研究院 | Microwave antenna, which regulates and controls magnetic, enhances linear plasma source generation system |
| CN112133165A (en) * | 2020-10-15 | 2020-12-25 | 大连理工大学 | Linear plasma experimental device |
| CN212906716U (en) * | 2020-10-15 | 2021-04-06 | 大连理工大学 | Linear plasma experimental device |
-
2021
- 2021-05-24 CN CN202110564526.2A patent/CN113133174B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144422A (en) * | 1998-09-08 | 2000-05-26 | Mitsubishi Heavy Ind Ltd | Silicon film forming method and silicon film forming device |
| US20100055345A1 (en) * | 2008-08-28 | 2010-03-04 | Costel Biloiu | High density helicon plasma source for wide ribbon ion beam generation |
| CN103915310A (en) * | 2012-12-28 | 2014-07-09 | 东京毅力科创株式会社 | Plasma processing container and plasma processing device |
| CN104653422A (en) * | 2015-01-22 | 2015-05-27 | 大连理工大学 | Three-level acceleration type spiral wave plasma propulsion device |
| CN106385756A (en) * | 2016-09-21 | 2017-02-08 | 北京机械设备研究所 | Electric arc heating type helicon wave plasma electric propulsion device |
| CN106304599A (en) * | 2016-09-29 | 2017-01-04 | 成都真火科技有限公司 | A kind of sealing structure for high-power laminar flow arc-plasma beam generator |
| CN109302791A (en) * | 2018-10-26 | 2019-02-01 | 中国科学院合肥物质科学研究院 | Microwave antenna, which regulates and controls magnetic, enhances linear plasma source generation system |
| CN112133165A (en) * | 2020-10-15 | 2020-12-25 | 大连理工大学 | Linear plasma experimental device |
| CN212906716U (en) * | 2020-10-15 | 2021-04-06 | 大连理工大学 | Linear plasma experimental device |
Non-Patent Citations (1)
| Title |
|---|
| CH.LINSMEIER ET AL.: "Material testing facilities and programs for plasma-facing component testing", 《NUCLEAR FUSION》, vol. 57, no. 09, 1 September 2017 (2017-09-01), pages 3 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116133224A (en) * | 2023-04-13 | 2023-05-16 | 安徽曦融兆波科技有限公司 | Resonant antenna device for exciting high-power helicon wave plasma |
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