CN112701456A - High-gain millimeter wave microstrip patch antenna with wide frequency band and low side lobe - Google Patents
High-gain millimeter wave microstrip patch antenna with wide frequency band and low side lobe Download PDFInfo
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Abstract
The application relates to a high-gain millimeter wave microstrip patch antenna with wide frequency band and low sidelobe. This compromise high gain millimeter wave microstrip paster antenna of broadband and low sidelobe includes: a ground plane; the dielectric plate layer is positioned on the upper surface of the grounding layer; the patch unit layer is positioned on the upper surface of the dielectric slab layer; the patch unit layer includes: the patch units are arranged at intervals and connected through a microstrip feeder line. According to the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe, the plurality of patch units are connected through the microstrip feeder line, the complexity of the feed network is reduced, the size of the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is small, the structure is simple and compact, the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is provided with the wide frequency band and the low side lobe level, and high gain can be achieved.
Description
Technical Field
The application relates to the technical field of antennas, in particular to a high-gain millimeter wave microstrip patch antenna with wide frequency band and low side lobe.
Background
With the development of wireless communication technology, the demand for antenna function is increasing day by day. The concept of microstrip antenna was proposed by professor Dtschmps in 1953, and in 1972, Munson and Howcll et al used microstrip patch and matching network to make microstrip antenna of the first practical application, and after that, microstrip antenna has been further developed in theory and application, and has gained more and more attention. Compared with the traditional antenna, the microstrip antenna has the advantages of small volume, light weight, thin thickness, convenience for integration and processing, low cost and wide application in manufacturing, and the miniaturization of the microstrip antenna is an important research direction of the microstrip antenna.
Currently, microstrip antenna miniaturization technologies can be broadly divided into two categories: the first is to change the current path and the electrical length by changing the topological structure of the radiating element, for example, the surface slotting technology, the radiating patch adopting a special structure, the folded patch technology, and the like; the second is to change the material parameters of the dielectric plate, for example, using short circuit loading technique, using high dielectric constant dielectric plate, using new artificial material (e.g., electromagnetic band gap structure), etc., in general, we can not only use a single technique to miniaturize the microstrip antenna, but also combine several miniaturization techniques
Theoretically, the performance of the antenna is related to the electrical size of the antenna, and therefore, the miniaturization of the antenna will bring some losses to the performance of the antenna, such as bandwidth, gain, etc., and usually requires a trade-off between various performances and indexes.
Disclosure of Invention
In view of the above, it is desirable to provide a high-gain millimeter wave microstrip patch antenna which has a small size, a wide frequency band, a low side lobe level, and a high gain, and which has both a wide frequency band and a low side lobe.
The application provides a compromise high gain millimeter wave microstrip paster antenna of broadband and low sidelobe, include:
a ground plane;
the dielectric plate layer is positioned on the upper surface of the grounding layer;
the patch unit layer is positioned on the upper surface of the dielectric slab layer; the patch unit layer includes:
the patch units are arranged at intervals and connected through a microstrip feeder line.
In one embodiment, the patch units are symmetrically distributed by taking a central axis of the microstrip feeder line as a central line.
In one embodiment, the ground layer comprises a metal film.
In one embodiment, the dielectric plate layer is a high frequency plate.
In one embodiment, each of the patch units has a notch.
In one embodiment, the notches are located on the same side of each patch unit, located on two opposite sides of the microstrip feed line, and symmetrically distributed with the central axis of the microstrip feed line as the central line.
In one embodiment, the width of the patch element is determined based on Chebyshev weighting.
In one embodiment, the number of patch units is 6.
In one embodiment, the dielectric plate layer has a length of 15-18mm, a width of 2.5-4.5mm, and a thickness of 0.245-0.265 mm.
In one embodiment, the notch is a rectangular gap, the length of the rectangular gap is 0.11-0.13mm, and the width of the rectangular gap is 0.05-0.15 mm.
In one embodiment, the lengths of the patch units decrease from the middle to two sides in sequence, and the widths of the patch units increase from the middle to two sides in sequence.
According to the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe, the plurality of patch units are connected through the microstrip feeder line, the complexity of the feed network is reduced, the size of the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is small, the structure is simple and compact, the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is provided with the wide frequency band and the low side lobe level, and high gain can be achieved.
Drawings
Fig. 1 is a front view of a high-gain millimeter wave microstrip patch antenna with broadband and low sidelobe according to an embodiment of the present application;
fig. 2 is a top view of a high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to an embodiment of the present application;
fig. 3 is a performance characteristic diagram of a high-gain millimeter wave microstrip patch antenna with both a wide frequency band and low side lobes according to an embodiment of the present application;
fig. 4 is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe according to an embodiment of the present application, wherein a curve is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe at 77GHz, a curve is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe at 78GHz, a curve is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe at 80GHz, a curve is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe at 81GHz, and a curve is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low side lobe at 79 GHz;
fig. 5 is a right-angle directional diagram of the high-gain millimeter wave microstrip patch antenna with consideration of the broadband and the low sidelobe according to an embodiment of the present application, where a curve (c) is the right-angle directional diagram when the operating frequency is 79GHz and phi is 90 deg., and a curve (c) is the right-angle directional diagram when the operating frequency is 79GHz and phi is 0 deg.
Description of the drawings:
1-grounding layer, 2-dielectric slab layer, 3-patch unit layer, 4-patch unit, 5-microstrip feeder, 6-gap, 7-side feeder.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It is to be understood that "connection" in the following embodiments is to be understood as "electrical connection", "communication connection", and the like if the connected circuits, modules, units, and the like have communication of electrical signals or data with each other.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, as used in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Currently, microstrip antenna miniaturization technologies can be broadly divided into two categories: the first is to change the current path and the electrical length by changing the topological structure of the radiating element, for example, the surface slotting technology, the radiating patch adopting a special structure, the folded patch technology, and the like; the second is to change the material parameters of the dielectric plate, for example, using short circuit loading technique, using high dielectric constant dielectric plate, using new artificial material (e.g., electromagnetic band gap structure), etc., in general, we can not only use a single technique to miniaturize the microstrip antenna, but also combine several miniaturization techniques
Theoretically, the performance of the antenna is related to the electrical size of the antenna, and therefore, the miniaturization of the antenna will bring some losses to the performance of the antenna, such as bandwidth, gain, etc., and usually requires a trade-off between various performances and indexes.
Generally speaking, the analysis method of the microstrip antenna can be divided into a current analysis method and an equivalent magnetic current method according to an adopted equivalent method, the current analysis method mainly converts the problem of solving the microstrip antenna into the problem of solving the current distribution on a patch and a ground plate, and can solve a full-wave theoretical integral equation through a numerical method to obtain various performance parameters of the microstrip antenna. The numerical simulation method adopted in the method is a finite element method.
The application provides a compromise high gain millimeter wave microstrip patch antenna of broadband and low sidelobe, as shown in fig. 1, include:
a ground layer 1;
the dielectric slab layer 2 is positioned on the upper surface of the grounding layer 1;
the patch unit layer 3 is positioned on the upper surface of the dielectric slab layer 2; the patch unit layer 3 includes:
a plurality of paster units 4, a plurality of paster units 4 interval are arranged to be connected through microstrip feeder 5.
According to the high-gain millimeter wave microstrip patch antenna with wide frequency band and low sidelobe, the plurality of patch units 4 are arranged at intervals and connected through the microstrip feeder line 5, so that the complexity of a feed network is reduced, the high-gain millimeter wave microstrip patch antenna with wide frequency band and low sidelobe has small size, simple and compact structure, wide frequency band and low sidelobe level, and high gain can be achieved.
Optionally, in one embodiment, the ground layer 1 includes a metal film, and the material and the thickness of the ground layer 1 are not limited in this embodiment.
Optionally, in one embodiment, the dielectric slab layer 2 is a high-frequency slab, and the material of the dielectric slab layer 2 is not limited in this embodiment; optionally, in one embodiment, the length of the dielectric slab layer 2 is 15-18mm, the width is 2.5-4.5mm, and the thickness is 0.245-0.265mm, specifically, the length of the dielectric slab layer 2 may be 15mm, 16mm, 16.5mm, 17mm, or 18mm, etc., the width may be 3mm, 3.24mm, or 4mm, etc., and the thickness may be 0.25mm, 0.254mm, or 0.26mm, etc., and the application does not limit the dimensional parameters of the dielectric slab layer 2, such as the length, the width, and the thickness.
Optionally, the length of the microstrip feed line 5 is 1.1mm to 1.4mm, specifically may be 1.1mm, 1.2mm, 1.25mm, 1.3mm, or 1.35mm, and the length of the microstrip feed line 5 is not limited in this embodiment.
Optionally, as shown in fig. 2, in one embodiment, the number of the patch units 4 is 6, the number of the patch units 4 is not limited in this embodiment, for example, the number of the patch units 4 may also be 4, 5, 7, 8, or even more.
Optionally, regarding the feeding mode of the high-gain millimeter wave microstrip patch antenna taking into account the broadband and the low sidelobe, the side feeding may be performed on the side surface, the back feeding may be performed on the back surface, and the coupling feeding may be performed on the back surface of the antenna through a microstrip patch or a waveguide slot. Preferably, the high-gain millimeter wave microstrip patch antenna with broadband and low sidelobe in the above embodiment feeds power through the side feeder 7, so as to further reduce the thickness of the high-gain millimeter wave microstrip patch antenna with broadband and low sidelobe, and make the structure thereof more compact.
Specifically, referring to fig. 2, in one embodiment, the lengths of the patch units 4 decrease from the middle to the two sides, and the widths of the patch units 4 increase from the middle to the two sides. If the number of the patch units 4 is even, the lengths and widths of the two middle patch units are the same, and the size parameters such as the lengths and widths of the patch units 4 are not limited in the present application. Preferably, the length of the patch unit 4 is 1.1mm-1.4mm, and the width is 0.5mm-1.6mm, specifically, the length of the patch unit 4 may be 1.1mm, 1.18mm, 1.2mm, 1.3mm, etc., and the width of the patch unit 4 may be 0.55mm, 1mm, 1.5mm, etc. More specifically, when the number of patch elements 4 is 6, the length of each patch element 4 in the x direction of the coordinate axis is: 1.33mm, 1.23mm, 1.18mm, 1.23mm and 1.33mm, the width of each patch element 4 in the x-direction of the coordinate axis being: 0.58mm, 1.091mm, 1.501mm, 1.091mm and 0.58 mm.
In one embodiment, the patch units 4 are symmetrically distributed with the central axis of the microstrip feed line 5 as the central axis.
In one embodiment, with continued reference to fig. 2, each patch unit 4 has a notch 6.
The high-gain millimeter wave microstrip patch antenna with wide frequency band and low sidelobe provided by the embodiment increases the bandwidth of the antenna by arranging the notch 6 on the patch unit 4.
In one embodiment, the notches 6 are located on the same side of each patch unit 4, are located on two opposite sides of the microstrip feed line 5, and are symmetrically distributed with the central axis of the microstrip feed line 5 as the central line.
Optionally, in one embodiment, all the gaps 6 have the same size.
In the high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe provided in the above embodiment, the symmetry of the notch 6 ensures the symmetry of electromagnetic energy on the patch unit 4, thereby ensuring the symmetry and low cross polarization characteristics of the radiation pattern of the antenna.
Optionally, in one embodiment, the notch 6 is a rectangular gap, the shape of the notch 6 is not limited in this application, and in the above embodiment, the notch 6 is preferably a rectangular gap; the length of the rectangular gap is 0.11-0.13mm, the width of the rectangular gap is 0.05-0.15mm, specifically, the length of the rectangular gap may be 0.11mm, 0.12mm, 0.13mm or the like, and the width may be 0.05mm, 0.1mm, 0.15mm or the like. For convenience of description, in the present application, a side parallel to the X axis in the coordinate axes of fig. 2 is used as a long side of the rectangular slit, and a side parallel to the Y axis in the coordinate axes of fig. 2 is used as a wide side of the rectangular slit.
In one embodiment, the width of the patch element 4 is determined based on chebyshev weighting.
Specifically, in one embodiment, based on the theory of a microstrip antenna, preferably, the basic parameters of the high-gain millimeter wave microstrip patch antenna with broadband and low side lobe provided in this embodiment are given: the material of the dielectric plate layer 2 is Taconic TLY, the dielectric constant of the dielectric plate layer is 2.2, and the loss tangent of the dielectric plate layer is 0.0009; the length of the dielectric plate layer 2 is 16.5mm, the width is 3.24mm, and the height is 0.254 mm; the length (in the positive direction of the X axis) of each microstrip feeder line 5 is 1.351mm, 1.279mm, 1.24mm, 1.279mm, 1.351mm and 1.12mm respectively, and the width of each microstrip feeder line 5 is 0.22 mm; the rectangular slit has a length of 0.12mm and a width of 0.1 mm.
The technical effect of the present application is further explained below with reference to fig. 3-5:
referring to FIG. 3, m1 has coordinates of (79, -43), m2 has coordinates of (80.9000, -9.9576), and m3 has coordinates of (77.6000, -10.0584). The high-gain millimeter wave microstrip patch antenna which gives consideration to both the broadband and the low sidelobe and is provided in one embodiment of the application resonates at 79GHz, the return loss at the resonant position is 43dB, the-10 dB bandwidth of the high-gain millimeter wave microstrip patch antenna which gives consideration to both the broadband and the low sidelobe is 3.3GHz, and the working frequency band is 77.6GHz-80.9 GHz.
Referring to fig. 4, fig. 4 is a main lobe pattern of a high-gain millimeter wave microstrip patch antenna at 77GHz-81GHz, where phi is 0degree, which is provided in one embodiment of the present application and has both a wide frequency band and low side lobes. The broadband high-gain millimeter wave microstrip patch antenna comprises a curve I, a curve II, a curve III and a curve IV, wherein the curve I is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna which gives consideration to both a broadband and a low side lobe at 77GHz, the curve III is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna which gives consideration to both the broadband and the low side lobe at 78GHz, the curve III is a main lobe directional diagram of the high-gain millimeter wave microstrip patch antenna which gives consideration to both the broadband and the low side lobe at 80GHz, the curve IV is a main lobe directional diagram of the high-gain millimeter wave microstrip. It can be seen from fig. 4 that the main lobe pattern does not substantially change with changes in frequency.
Referring to fig. 5, fig. 5 shows the right-angle patterns of the working frequencies at 79GHz, phi 0degree and phi 90 degree. Wherein, the curve is a right-angle directional diagram when the working frequency is 79GHz and phi is 90 degrees, the curve is a right-angle directional diagram when the working frequency is 79GHz and phi is 0 degrees, and the coordinates of m4 are (-30.0000, -17.5029). It can be known from the figure that the high-gain millimeter wave microstrip patch antenna which is provided in one embodiment of the application and has both wide frequency band and low sidelobe has a lower sidelobe level of-17.5 dB.
According to the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe, the plurality of patch units are connected through the microstrip feeder line, the complexity of the feed network is reduced, the size of the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is small, the structure is simple and compact, the high-gain millimeter wave microstrip patch antenna with the wide frequency band and the low side lobe is provided with the wide frequency band and the low side lobe level, and high gain can be achieved.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. The utility model provides a compromise high gain millimeter wave microstrip patch antenna of broadband and low sidelobe which characterized in that includes:
a ground plane;
the dielectric plate layer is positioned on the upper surface of the grounding layer;
the patch unit layer is positioned on the upper surface of the dielectric slab layer; the patch unit layer includes:
the patch units are arranged at intervals and connected through a microstrip feeder line.
2. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 1, wherein the plurality of patch elements are symmetrically distributed with the central axis of the microstrip feed line as the center line.
3. The broadband and low sidelobe high gain millimeter wave microstrip patch antenna according to claim 1 wherein said ground plane comprises a metal film.
4. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 1, wherein the dielectric plate layer is a high frequency plate.
5. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe of claim 1, wherein each of said patch elements has a notch.
6. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 5, wherein the notch is located at the same side of each patch unit, is located at two opposite sides of the microstrip feed line, and is symmetrically distributed with the central axis of the microstrip feed line as the central line.
7. The broadband and low sidelobe high gain millimeter wave microstrip patch antenna according to claim 1, wherein the width of said patch element is determined based on chebyshev weighting.
8. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 1, wherein the number of patch elements is 6.
9. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 1, wherein the dielectric plate layer has a length of 15-18mm, a width of 2.5-4.5mm and a thickness of 0.245-0.265 mm.
10. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 5, wherein the notch is a rectangular slot, the length of the rectangular slot is 0.11-0.13mm, and the width of the rectangular slot is 0.05-0.15 mm.
11. The high-gain millimeter wave microstrip patch antenna with both broadband and low sidelobe according to claim 1, wherein the lengths of the patch elements decrease from the middle to both sides in sequence, and the widths of the patch elements increase from the middle to both sides in sequence.
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| CN202011328234.0A CN112701456A (en) | 2020-11-24 | 2020-11-24 | High-gain millimeter wave microstrip patch antenna with wide frequency band and low side lobe |
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| CN202011328234.0A CN112701456A (en) | 2020-11-24 | 2020-11-24 | High-gain millimeter wave microstrip patch antenna with wide frequency band and low side lobe |
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Application publication date: 20210423 |