CN112260671A - Integrated radio frequency switch with gate voltage rebalancing - Google Patents
Integrated radio frequency switch with gate voltage rebalancing Download PDFInfo
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- CN112260671A CN112260671A CN202011421819.7A CN202011421819A CN112260671A CN 112260671 A CN112260671 A CN 112260671A CN 202011421819 A CN202011421819 A CN 202011421819A CN 112260671 A CN112260671 A CN 112260671A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention provides an integrated radio frequency switch with rebalanced grid voltage, which relates to the field of semiconductor devices and comprises a plurality of single-stage switch devices, wherein each single-stage switch device comprises a field effect transistor, a grid resistor and an equivalent capacitor structure; the high-impedance switch circuit comprises a field effect tube, a control end, an equivalent capacitor structure and a switch circuit, wherein the control end is used as one end of a grid resistor used for isolating radio frequency signals, the other end of the grid resistor is connected with a grid of the field effect tube, a high-impedance end of the field effect tube is used as a signal input end, a low-impedance end of the field effect tube is used as a grounding end, the equivalent capacitor structure is used for balancing grid voltage, the pressure bearing capacity of the switch circuit.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an integrated radio frequency switch with gate voltage rebalancing.
Background
With the development of science and technology, semiconductor devices are increasingly widely used due to their own characteristic advantages. The voltage bearing capability of the integrated radio frequency switch with the gate voltage rebalanced is important, and in the actual application process, if the integrated radio frequency switch is broken down due to insufficient bearing capability, the reliability of application is affected.
The research of the inventor finds that the field effect transistor has poor voltage bearing capability and cannot achieve the optimal effect due to the self reason.
Disclosure of Invention
In view of the above, the present invention provides an integrated rf switch with gate voltage rebalancing, which improves the voltage-bearing capability of the switch circuit by adding an equivalent capacitor structure, and ensures the application reliability.
In a first aspect, an embodiment of the present invention provides an integrated radio frequency switch with gate voltage rebalancing, including a plurality of single-stage switching devices, where the single-stage switching devices include field effect transistors, gate resistors, and equivalent capacitor structures;
the equivalent capacitor structure is used for isolating radio-frequency signals, one end of the grid resistor is a control end, the other end of the grid resistor is connected with the grid of the field-effect tube, the high-impedance end of the field-effect tube is used as a signal input end, the low-impedance end of the field-effect tube is used as a grounding end, and the equivalent capacitor structure is used for balancing grid voltage.
In some embodiments, the equivalent capacitor structure includes a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
In some embodiments, one end of the equivalent capacitor structure is connected to the gate, and the other end of the equivalent capacitor structure is connected to the high impedance terminal.
In some embodiments, one end of the equivalent capacitor structure is connected to the gate, and the other end of the equivalent capacitor structure is connected to the low impedance terminal.
In some embodiments, the equivalent capacitive structure comprises a first equivalent capacitive structure and a second equivalent capacitive structure:
one end of the first equivalent capacitor structure is connected with the grid electrode, and the other end of the first equivalent capacitor structure is connected with the high-impedance end;
one end of the second equivalent capacitor structure is connected with the grid electrode, and the other end of the second equivalent capacitor structure is connected with the low impedance end.
In some embodiments, the single stage switching device comprises a first switching device, a second switching device, and a third switching device;
the high impedance end of the first switch device is a signal input end, the low impedance end of the first switch device is connected with the high impedance end of the second switch device, the low impedance end of the second switch device is connected with the high impedance end of the third switch device, and the low impedance end of the third switch device is grounded.
In some embodiments, the fet further comprises a body electrode, and the equivalent capacitance structure is further configured to balance the body voltage.
In some embodiments, one end of the equivalent capacitor structure is connected to the body electrode, and the other end of the equivalent capacitor structure is connected to the high impedance end.
In some embodiments, one end of the equivalent capacitor structure is connected to the body electrode, and the other end of the equivalent capacitor structure is connected to the low impedance terminal.
In some embodiments, the equivalent capacitance structures include a third equivalent capacitance structure and a fourth equivalent capacitance structure:
one end of the third equivalent capacitor structure is connected with the body pole, and the other end of the third equivalent capacitor structure is connected with the high-impedance end;
one end of the fourth equivalent capacitor structure is connected with the body pole, and the other end of the fourth equivalent capacitor structure is connected with the low impedance end.
The embodiment of the invention provides an integrated radio frequency switch with rebalanced grid voltage, which cancels the effect of parasitic capacitance brought by grid resistance to the ground by adding an equivalent capacitance structure for balancing the grid voltage, and maintains the radio frequency voltage of a grid at the middle of a drain electrode and a source electrode, thereby improving the integral pressure bearing capacity of a switch circuit.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of an integrated RF switch with gate voltage rebalancing;
FIG. 2 is a schematic diagram of another integrated RF switch with gate voltage rebalancing;
FIG. 3 is an equivalent circuit schematic diagram of an integrated RF switch with gate voltage rebalancing;
FIG. 4 is a schematic diagram of an integrated RF switch circuit with gate voltage rebalancing according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an alternative integrated RF switch circuit with gate voltage rebalancing in accordance with an embodiment of the present invention;
FIG. 6 is a schematic diagram of an integrated RF switch circuit with gate voltage rebalancing according to an embodiment of the present invention.
Icon: 1-a first series switch structure; 2-a second series switch arrangement; 3-an input terminal; 4-a first output; 5-a second output; 6-a first parallel switch structure; 7-a second parallel switch structure; 8-gate resistance to isolate the radio frequency signal; 9-switching device gate; 10-a control end; 11-high impedance end; 12-single stage switching devices; 13-low impedance terminal; 14-parasitic capacitance to ground; 15-capacitance for balancing the gate voltage; 16-capacitance for balancing body voltage; 17-a gate; 18-body pole.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The typical structure of the current gate voltage rebalancing integrated rf switch generally consists of one signal input terminal 3 and a plurality of signal output terminals (a first output terminal 4 and a second output terminal 5), as shown in fig. 1. Each output end is composed of a series switch structure and a to-ground parallel switch structure. When a certain path is conducted (the first output end 4 is conducted), the first series switch structure 1 is conducted, and the first parallel switch structure 6 connected to the ground in parallel is turned off; the other non-conducting paths are reversed, the second series switch arrangement 2 is switched off and the second parallel switch arrangement 7 connected in parallel to ground is switched on. Therefore, the pressure bearing capacity of the whole radio frequency switch on high-power signals is mainly determined by the pressure bearing capacity of the second series switch structure 2 and the first parallel switch structure 6 which are in the turn-off state.
While integrated rf switches with gate voltage rebalancing typically use fets as switching devices. And further has the field effect triode principle, and the device can be in a turn-off state by applying direct current voltage bias to the grid. However, if the rf signal voltage applied to the field effect transistor is too large, the instantaneous gate-to-source or drain voltage may exceed the threshold voltage of the device itself, causing the device to temporarily turn on, which may destroy the performance of the entire switching circuit.
As shown in fig. 2, in order to increase the voltage-bearing capacity of the switching circuit, it is generally designed to use: a high impedance device (typically a resistor of value on the order of 10k ohms to 100k ohms) is connected in series with the control terminal 10 so that the gate is approximately open and the rf voltage is at the very middle of the drain and source to maximize the voltage-carrying capability of the single stage switching device 12. Meanwhile, a plurality of stages of the single-stage switching devices 12 are stacked, thereby increasing the pressure-bearing capacity.
Through the research of the inventor, in practical application, because the series resistor (the gate resistor 8 for isolating the radio frequency signal) has the parasitic capacitance 14 to the ground, the actual impedance of the gate 9 of the switching device at high frequency is lower than that designed, so that the radio frequency voltage of the gate cannot be positioned between the drain and the source but is biased to one side, and the single-stage pressure is reduced, as shown in fig. 3. The negative effect becomes obvious along with the improvement of the pressure-bearing requirement of the switch and the continuous increase of the stacking series, thereby reducing the pressure-bearing capacity of the whole switch circuit and also leading the mode of increasing the whole pressure-bearing capacity by increasing the stacking series to meet the bottleneck.
Based on this, the integrated radio frequency switch with the rebalanced gate voltages provided by the embodiment of the invention improves the bearing capacity of the switch circuit by adding the equivalent capacitor structure, and ensures the application reliability.
The following is a detailed description by way of example.
The embodiment of the invention provides an integrated radio frequency switch with rebalancing grid voltage, which comprises a plurality of single-stage switch devices 12, wherein each single-stage switch device 12 comprises a field effect transistor, a grid resistor and an equivalent capacitor structure;
the high-impedance equivalent capacitor structure is used for isolating radio-frequency signals, one end of the grid resistor is a control end 10, the other end of the grid resistor is connected with a grid of the field-effect tube, a high-impedance end 11 of the field-effect tube is used as a signal input end, a low-impedance end 13 of the field-effect tube is used as a grounding end, and the equivalent capacitor structure is used for balancing grid voltage.
In a practical preferred embodiment, the effect of parasitic capacitance brought by the grid resistance to the ground is counteracted by adding an equivalent capacitance structure for balancing the grid voltage, and the radio-frequency voltage of the grid is maintained at the middle between the drain and the source, so that the whole pressure-bearing capacity of the switch circuit is improved.
In some embodiments, the equivalent capacitor structure includes a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
As an alternative embodiment, the voltage division of the gate can be adjusted by adding an extra capacitor to the source or drain at the gate.
Here, the capacitance value added for each stage is different according to the position of the stage in the stack, so as to achieve the optimal effect. In the same stack (in the same single-stage switching device 12), the capacitances to be added at different stages (gate to source or gate to drain) are different from one another for optimum effect.
Wherein the added capacitance (the capacitance 15 for balancing the gate voltage) may be present only on one side, as shown in fig. 4.
In some embodiments, one end of the equivalent capacitor structure is connected to the gate, and the other end of the equivalent capacitor structure is connected to the high impedance terminal 11.
In some embodiments, one end of the equivalent capacitor structure is connected to the gate, and the other end of the equivalent capacitor structure is connected to the low impedance terminal 13.
The capacitor 15 for balancing the gate voltage may also have a source and a drain double side, as shown in fig. 5, and in some embodiments, the equivalent capacitor structure includes a first equivalent capacitor structure and a second equivalent capacitor structure:
one end of the first equivalent capacitor structure is connected with the grid, and the other end of the first equivalent capacitor structure is connected with the high-impedance end 11;
one end of the second equivalent capacitor structure is connected with the gate, and the other end of the second equivalent capacitor structure is connected with the low impedance terminal 13.
In some embodiments, the single stage switching device 12 includes a first switching device, a second switching device, and a third switching device;
the high impedance end 11 of the first switch device is a signal input end, the low impedance end 13 of the first switch device is connected with the high impedance end 11 of the second switch device, the low impedance end 13 of the second switch device is connected with the high impedance end 11 of the third switch device, and the low impedance end 13 of the third switch device is grounded.
Here, the number of the multi-stage switching devices is not limited thereto, and is exemplified by only the first switching device, the second switching device, and the third switching device.
For a body-pole fet device, a capacitor 16 for balancing the body voltage may also be added to the body pole 18, as shown in fig. 6, and in some embodiments, the fet further includes a body pole 18, and the equivalent capacitor structure is also used for balancing the body voltage. Specifically, with reference to the above-described embodiment, the setting positions of the equivalent capacitance for the equilibrium body voltage may include the following:
in some embodiments, one end of the equivalent capacitor structure is connected to the body electrode, and the other end of the equivalent capacitor structure is connected to the high impedance terminal 11.
In some embodiments, one end of the equivalent capacitor structure is connected to the body pole, and the other end of the equivalent capacitor structure is connected to the low impedance terminal 13.
In some embodiments, the equivalent capacitance structures include a third equivalent capacitance structure and a fourth equivalent capacitance structure:
one end of the third equivalent capacitor structure is connected with the body electrode, and the other end of the third equivalent capacitor structure is connected with the high-impedance end 11;
one end of the fourth equivalent capacitor structure is connected with the body pole, and the other end of the fourth equivalent capacitor structure is connected with the low impedance end 13.
In the embodiment of the invention, a capacitor or a structure equivalent to the capacitor is added between the grid 17 (or the body 18) and the source (or the drain) to balance the radio-frequency voltage of the grid and offset the negative influence caused by the parasitic capacitor of the external series resistor of the grid. Specifically, the voltage of the gate 17 (or the body 18) is rebalanced by adding capacitance, so that the switch in the off state is not opened too early, and the maximum voltage that the switch circuit can bear is raised.
In the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (10)
1. An integrated radio frequency switch with gate voltage rebalancing, comprising a plurality of single-stage switching devices, wherein the single-stage switching devices comprise field effect transistors, gate resistors and equivalent capacitor structures;
the equivalent capacitor structure is used for isolating radio-frequency signals, one end of the grid resistor is a control end, the other end of the grid resistor is connected with the grid of the field-effect tube, the high-impedance end of the field-effect tube is used as a signal input end, the low-impedance end of the field-effect tube is used as a grounding end, and the equivalent capacitor structure is used for balancing grid voltage.
2. The gate voltage rebalancing integrated radio frequency switch of claim 1, wherein the equivalent capacitor structure comprises a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
3. The gate voltage rebalancing integrated radio frequency switch of claim 2, wherein one end of the equivalent capacitance structure is connected to the gate and the other end of the equivalent capacitance structure is connected to the high impedance terminal.
4. The gate voltage rebalancing integrated radio frequency switch of claim 1, wherein one end of said equivalent capacitor structure is connected to said gate and the other end of said equivalent capacitor structure is connected to said low impedance terminal.
5. The integrated gate voltage rebalancing radio frequency switch of claim 1, wherein the equivalent capacitance structure comprises a first equivalent capacitance structure and a second equivalent capacitance structure:
one end of the first equivalent capacitor structure is connected with the grid electrode, and the other end of the first equivalent capacitor structure is connected with the high-impedance end;
one end of the second equivalent capacitor structure is connected with the grid electrode, and the other end of the second equivalent capacitor structure is connected with the low impedance end.
6. The gate voltage rebalancing integrated radio frequency switch of claim 3, 4 or 5, wherein the single stage switching device comprises a first switching device, a second switching device and a third switching device;
the high impedance end of the first switch device is a signal input end, the low impedance end of the first switch device is connected with the high impedance end of the second switch device, the low impedance end of the second switch device is connected with the high impedance end of the third switch device, and the low impedance end of the third switch device is grounded.
7. The gate voltage rebalancing integrated radio frequency switch of claim 1, wherein the field effect transistor further comprises a body electrode, the equivalent capacitance structure further for balancing the body voltage.
8. The gate voltage rebalancing integrated radio frequency switch of claim 7, wherein one end of the equivalent capacitance structure is connected to the body pole and the other end of the equivalent capacitance structure is connected to the high impedance terminal.
9. The gate voltage rebalancing integrated RF switch of claim 7, wherein one end of said equivalent capacitive structure is connected to said body terminal and the other end of said equivalent capacitive structure is connected to said low impedance terminal.
10. The gate voltage rebalancing integrated radio frequency switch of claim 7, wherein the equivalent capacitance structures comprise a third equivalent capacitance structure and a fourth equivalent capacitance structure:
one end of the third equivalent capacitor structure is connected with the body pole, and the other end of the third equivalent capacitor structure is connected with the high-impedance end;
one end of the fourth equivalent capacitor structure is connected with the body pole, and the other end of the fourth equivalent capacitor structure is connected with the low impedance end.
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| CN202011421819.7A CN112260671B (en) | 2020-12-08 | 2020-12-08 | Integrated radio frequency switch with gate voltage rebalancing |
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| CN110113036A (en) * | 2019-05-09 | 2019-08-09 | 河源广工大协同创新研究院 | A kind of radio-frequency switch circuit structure of High Linear low harmony wave |
| CN111431518A (en) * | 2020-04-21 | 2020-07-17 | 珠海复旦创新研究院 | Novel numerical control double-frequency radio frequency switch |
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| CN100553134C (en) * | 2003-04-02 | 2009-10-21 | 模拟装置公司 | Switching device |
| CN104242881A (en) * | 2013-06-24 | 2014-12-24 | 瑞昱半导体股份有限公司 | Semiconductor switch |
| CN105900339A (en) * | 2013-11-13 | 2016-08-24 | 天工方案公司 | Circuits and methods for improved quality factor in a stack of transistors |
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