CN111983887B - Sub-resolution auxiliary graph acquisition method - Google Patents
Sub-resolution auxiliary graph acquisition method Download PDFInfo
- Publication number
- CN111983887B CN111983887B CN202011069768.6A CN202011069768A CN111983887B CN 111983887 B CN111983887 B CN 111983887B CN 202011069768 A CN202011069768 A CN 202011069768A CN 111983887 B CN111983887 B CN 111983887B
- Authority
- CN
- China
- Prior art keywords
- sub
- graph
- resolution auxiliary
- distance
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 238000012937 correction Methods 0.000 claims abstract description 15
- 238000004088 simulation Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 206010033296 Overdoses Diseases 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application discloses a method for acquiring a sub-resolution auxiliary graph, which at least comprises the following steps: providing an integrated circuit layout, wherein the integrated circuit layout comprises a plurality of first patterns and first sub-resolution auxiliary patterns; performing optical proximity correction on the first graph to obtain a plurality of second graphs; dividing the first sub-resolution auxiliary graph into a plurality of sub-graphs along the direction perpendicular to the second graph to obtain a second sub-resolution auxiliary graph, wherein a first distance is arranged between every two adjacent sub-graphs; moving the sub-graph to the second graph for a second distance, and acquiring a minimum edge position placement error of a simulation contour of the second graph optical model relative to the first graph; and obtaining an optimal second sub-resolution auxiliary graph through the minimum edge position placement error. The application solves the problem that the sub-resolution auxiliary graph is easy to be exposed and developed on the substrate, thereby reducing the yield of products.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a method for acquiring a sub-resolution auxiliary graph.
Background
With the development of the semiconductor industry, the performance and the energy consumption of the chip are more and more demanding, and in order to obtain a chip with smaller area, higher performance and lower energy consumption, the size of each pattern on the chip and the space between the patterns need to be further reduced, and the reduction of the space can cause the design distance between certain patterns on the layout to be smaller than the length of the light wave. Therefore, the layout needs to be corrected before being imprinted on the mask plate, so that an optical proximity effect (OpticalProximityEffect, OPE) is prevented from being generated in the photoetching process, and the phenomenon that the graph imprinted on the chip is inconsistent with the design and is distorted is avoided. The technology of correcting the layout to avoid the Optical proximity effect is an Optical proximity correction (Optical ProximityCorrection, OPC) technology. Sub-resolution assist feature (Sub-resolutionAssistFeature, SRAF) is a more commonly used optical proximity correction scheme. The layout is corrected by the sub-resolution auxiliary graph technology, so that the graph resolution of the photoetching process can be effectively improved, the process window is enlarged, and the product yield is improved.
And the sub-resolution auxiliary pattern added on the main pattern based on the addition rule is subjected to optical proximity correction, and the distance between the sub-resolution auxiliary pattern and the corrected main pattern is too small, so that the sub-resolution auxiliary pattern is easy to expose and develop on the substrate, and the product yield is reduced.
Disclosure of Invention
The application aims to provide a method for acquiring a sub-resolution auxiliary pattern, which solves the problem that the sub-resolution auxiliary pattern is easy to be exposed and developed on a substrate due to the fact that the distance between the sub-resolution auxiliary pattern and a corrected main pattern is too small after optical proximity correction, so that the product yield is reduced.
In order to solve the technical problems, the application is realized by the following technical scheme:
the application provides a method for acquiring a sub-resolution auxiliary graph, which at least comprises the following steps:
providing an integrated circuit layout, wherein the integrated circuit layout comprises a plurality of first patterns and first sub-resolution auxiliary patterns; the plurality of first sub-resolution auxiliary patterns are arranged on the periphery of the plurality of first patterns, and a minimum distance is reserved between the first sub-resolution auxiliary patterns and the first patterns;
performing optical proximity correction on the first graph to obtain a plurality of second graphs;
dividing the first sub-resolution auxiliary graph into a plurality of sub-graphs along the direction perpendicular to the second graph to obtain a second sub-resolution auxiliary graph, wherein a first distance is arranged between every two adjacent sub-graphs;
moving the sub-graph to the second graph for a second distance, and acquiring an edge position placement error of a simulation contour of the second graph optical model relative to the first graph;
adjusting the first distance and the second distance to obtain a minimum edge position placement error of the simulated contour of the second graph optical model relative to the first graph;
and obtaining an optimal second sub-resolution auxiliary graph through the minimum edge position placement error.
In one embodiment of the application, the simulated contour of the second graphical optical model has a first error in a horizontal direction with respect to the first graph and the simulated contour of the second graphical optical model has a second error in a vertical direction with respect to the first graph.
In one embodiment of the application, the second sub-resolution auxiliary pattern includes two sub-patterns.
In one embodiment of the present application, the first sub-resolution auxiliary pattern is rectangular, and the sub-pattern is divided along a long side of the first sub-resolution auxiliary pattern.
In one embodiment of the present application, the first distance is adjusted to be in a range of 0 to a length of a long side of the first sub-resolution auxiliary pattern.
In one embodiment of the present application, the adjustment interval of the first distance is 0 to the length of the long side of the first sub-resolution auxiliary pattern.
In one embodiment of the present application, the second distance is adjusted to a range from 0 to a distance of the first sub-resolution auxiliary pattern from the second pattern.
In one embodiment of the present application, the second distance is adjusted by a distance from 0 to the first sub-resolution auxiliary pattern to the second pattern.
In one embodiment of the application, the first error and the second error are obtained as a function of the first distance and the second distance.
In one embodiment of the application, a minimum edge placement error is obtained based on the root mean square of the first error and the second error.
The application divides the whole first sub-resolution auxiliary pattern adjacent to the pattern to be corrected, namely the first pattern, into a plurality of sections with gaps in the middle, and solves the problem that the sub-resolution auxiliary pattern is easy to be exposed and developed on a substrate due to the fact that the distance between the sub-resolution auxiliary pattern and the corrected main pattern is too small after optical proximity correction due to the existence of the gaps, so that the product yield is reduced.
Of course, it is not necessary for any one product to practice the application to achieve all of the advantages set forth above at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for obtaining sub-resolution auxiliary graphics according to the present application;
FIG. 2 is a schematic diagram of the structure corresponding to step S1 in FIG. 1;
FIG. 3 is a schematic diagram of the structure corresponding to step S2 in FIG. 1;
FIG. 4 is a schematic diagram of the structure corresponding to step S2 in FIG. 1;
FIG. 5 is a schematic diagram of the structure corresponding to step S3 in FIG. 1;
FIG. 6 is a schematic diagram of the structure corresponding to step S4 in FIG. 1;
FIG. 7 is a schematic diagram of the structure corresponding to the step S5 in FIG. 1;
FIG. 8 is a schematic diagram of a structure corresponding to step S1 in an embodiment of the application;
FIG. 9 is a schematic diagram of a structure corresponding to step S2 in an embodiment of the present application;
FIG. 10 is a schematic diagram of a structure corresponding to the step S1 in another embodiment of the present application;
FIG. 11 is a schematic diagram of a structure corresponding to step S2 in another embodiment of the present application;
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The sub-resolution auxiliary pattern added on the main pattern based on the rule, such as the addition of the sub-resolution auxiliary pattern based on the rule of 55nm-90nm, after optical proximity correction, the sub-resolution auxiliary pattern is exposed and developed on a wafer for example due to the fact that the distance between the sub-resolution auxiliary pattern and the corrected main pattern is too small, and the scattering body is easier to be exposed and developed on the wafer due to the superposition of the intensity of light when being close to the target pattern, so that the product yield is reduced.
Referring to fig. 1, the present application provides a method for obtaining a sub-resolution auxiliary graph, which at least includes the following steps:
s1, providing an integrated circuit layout, wherein the integrated circuit layout comprises a plurality of first patterns and first sub-resolution auxiliary patterns; the plurality of first sub-resolution auxiliary patterns are arranged on the periphery of the plurality of first patterns, and a minimum distance is reserved between the first sub-resolution auxiliary patterns and the first patterns;
s2, performing optical proximity correction on the first patterns to obtain a plurality of second patterns;
s3, dividing the first sub-resolution auxiliary graph into a plurality of sub-graphs along the direction perpendicular to the second graph to obtain a second sub-resolution auxiliary graph, wherein a first distance is arranged between every two adjacent sub-graphs;
s4, moving the sub-graph to the second graph for a second distance, and obtaining an edge position placement error of the simulation contour of the second graph optical model relative to the first graph;
s5, adjusting the first distance and the second distance, and obtaining a minimum edge position placement error of the simulation contour of the second graph optical model relative to the first graph;
s6, obtaining an optimal second sub-resolution auxiliary graph through the minimum edge position placement error.
Referring to fig. 2 to 4, in step S1 and step S2, an integrated circuit layout 1 is provided, wherein the integrated circuit layout 1 includes a plurality of first patterns 10 and first sub-resolution auxiliary patterns 20, the plurality of first sub-resolution auxiliary patterns 20 are disposed on the periphery of the plurality of first patterns 10, and a minimum distance is provided between the first sub-resolution auxiliary patterns 20 and the first patterns 10. The second pattern 50 is a pattern obtained by performing model-based optical proximity correction. Model-based optical proximity correction refers herein to creating an optical model and then simulating the exposure results of the original pattern. The first pattern 10 is a pattern of isolated or sparsely distributed patterns. By adding the first sub-resolution auxiliary pattern 20, the process window of the part of the isolated or sparsely distributed pattern can be matched with the process window of the dense pattern, the focusing depth of the part of the isolated or sparsely distributed pattern is increased, the requirement of imaging process parameters is reduced, and the exposure accuracy is improved.
Referring to fig. 2 to 4, in step S1 and step S2, the first sub-resolution auxiliary pattern 20 includes two stripe sub-resolution auxiliary patterns, for example, a first sub-resolution auxiliary pattern 21 and a second sub-resolution auxiliary pattern 22, which are disposed at the periphery of the first pattern 10, respectively, and the addition rule is 55-90-40-225, for example, the width of the first sub-resolution auxiliary pattern 21 adjacent to the first pattern 10, i.e., having the smallest distance from the first pattern 10 is 55nm, the distance between the first sub-resolution auxiliary pattern 21 and the first pattern 10 is 90nm, the width of the second sub-resolution auxiliary pattern 22 far from the first pattern 10 is 40nm, and the distance between the second sub-resolution auxiliary pattern 22 and the first pattern 10 is 225 nm, for example. In this embodiment, the minimum distance is, for example, the distance between the first sub-resolution auxiliary pattern 21 and the first pattern 10. After the optical proximity correction is performed on the first pattern 10, a plurality of second patterns 50 are obtained, the second patterns 50 become larger than the first patterns 10, and the positions of the first sub-resolution auxiliary patterns 20 are unchanged, so that the second patterns 50 are closer to the first sub-resolution auxiliary patterns 20, for example, 47nm, and at the minimum distance, the first sub-resolution auxiliary patterns 20 are exposed and developed on, for example, a wafer due to the fact that the light intensity is superimposed, and the closer the scatterer is to the target pattern, the easier the first sub-resolution auxiliary patterns 20 are exposed and developed on the wafer.
Referring to fig. 5 and 6, in step S3, the first sub-resolution auxiliary pattern 20 is divided into a plurality of sub-patterns 30 along a direction perpendicular to the second pattern 50, so as to obtain a second sub-resolution auxiliary pattern 40, wherein a first distance is provided between adjacent sub-patterns 30. In this embodiment, the first sub-resolution auxiliary pattern 21 having the smallest distance from the second pattern 50 is divided into a plurality of sub-patterns 30 along the direction perpendicular to the second pattern 50, specifically, for example, the first sub-resolution auxiliary pattern 21 is divided into, for example, 2 sub-patterns 30, and a first distance a is provided between adjacent sub-patterns 30.
Referring to fig. 6 to 11, in step S4 and step S5, the sub-graph 30 is moved to the second graph 50 by a second distance, and an edge position placement error of the simulated outline 60 of the optical model of the second graph 50 relative to the first graph 10 is obtained; by adjusting the first distance and the second distance, a minimum edge position placement error of the simulated outline 60 of the optical model of the second graphic 50 relative to the first graphic 10 is obtained. In this embodiment, the sub-graphic 30 is moved toward the second graphic 50 by a second distance b, and the range of the second distance b is set by a person. Specifically, the first distance a may be fixed first, and the second distance b that the sub-graph 30 moves towards the second graph 50 may be adjusted, so as to obtain the edge position placement errors of the simulated outlines 60 of the optical models of the second graph 50 relative to the first graph 10. The second distance b may be fixed first, and then the first distances a between the plurality of sub-patterns 30 may be adjusted, so as to obtain the edge position placement errors of the simulated outlines 60 of the plurality of optical models of the second pattern 50 relative to the first pattern 10. By adjusting the first distance a and the second distance b, a minimum edge position placement error of the simulated outline 60 of the optical model of the second pattern 50 with respect to the first pattern 10 is finally obtained.
The first sub-resolution auxiliary pattern 21 is rectangular, and the sub-pattern 30 is divided along the long side of the first sub-resolution auxiliary pattern 21. The value range of the first distance a is, for example, 0 to the length of the long side of the first sub-resolution auxiliary pattern 21, particularly, for example, 1 to 20nm, the value range of the second distance b is, for example, 0 to the distance of the first sub-resolution auxiliary pattern 21 from the second pattern 50, particularly, for example, 0 to 25nm, the adjustment interval of the first distance a is, for example, 0 to the length of the long side of the first sub-resolution auxiliary pattern 21, particularly, the adjustment interval of the first distance a is, for example, 0.5nm, the adjustment interval of the second distance b is, for example, 0 to 5nm, particularly, the adjustment interval of the second distance b is, for example, 1nm. Specifically, when the optical model is brought into the second pattern 50, the optical model generates a simulated contour 60 according to the second pattern 50, the simulated contour 60 of the optical model of the second pattern 50 has a first error X in the horizontal direction with respect to the first pattern 10, and the simulated contour 60 of the optical model of the second pattern 50 has a second error Y in the vertical direction with respect to the first pattern 10, as shown in table 1, (1)X is the first error X in the horizontal direction between the simulated contour 60 generated by pattern (1) and pattern (1), and 1)Y is the second error Y in the vertical direction between the simulated contour 60 generated by pattern (1) and pattern (1). (1) 0X is a first error X in the horizontal direction of the simulated contour 60 generated by pattern (1)1) and pattern (2), and 2)Y is a second error Y in the vertical direction of the simulated contour 60 generated by pattern (2) and pattern (2). The first distance a and the second distance b are adjusted to obtain a plurality of groups of first errors X and second errors Y, and then the corresponding edge position placement errors are obtained through the values of each group of first errors X and second errors Y, wherein the edge placement errors are differences between the edges of the exposed photoresist pattern simulated by the photoetching software and the design pattern, and in the embodiment, the edge placement errors can be represented by root mean square, for example, the root mean square can be obtained through the following formula:
wherein X is the first error of the newly generated graphic simulation contour and the original graphic along the horizontal direction, and Y is the second error of the newly generated graphic simulation contour and the original graphic along the vertical direction.
In the present embodiment, the minimum edge position placement error is selected among all the edge position placement errors.
In other embodiments, the edge placement error may be represented by other ways, and the method for representing the edge placement error is not limited in the present application.
TABLE 1
Referring to table 1, in step S6, an optimal second sub-resolution auxiliary pattern is obtained through the minimum edge position placement error RMS. Specifically, the optimal values of the first distance a and the second distance b of the corresponding second sub-resolution auxiliary patterns are obtained through the minimum edge position placement error RMS, so that the second sub-resolution auxiliary patterns with optimal patterns (1) and (2) are obtained, and then the subsequent process procedures such as exposure development and the like are carried out by utilizing the optimal second sub-resolution auxiliary patterns.
Referring to table 1, more specifically, for a second sub-resolution auxiliary pattern, for example, let a=1nm, b=1nm, a simulated contour 60 of the second pattern 50 is generated by the optical model, and a first error X and a second error Y between the simulated contour 60 and the first pattern 10 are calculated, and an edge position placement error is calculated by the first error X and the second error Y. Similarly, let a=1nm and b=2nm, the simulated contour 60 of the second pattern 50 is generated by the optical model, and the first error X and the second error Y between the simulated contour 60 and the first pattern 10 are calculated, and the edge position placement error is calculated by the first error X and the second error Y. Let a=1nm, b=3nm, generate the simulated contour 60 of the second pattern 50 by the optical model, and calculate the first error X and the second error Y between the simulated contour 60 and the first pattern 10, and calculate the edge position placement error by the first error X and the second error Y. Let a=10nm, b=1nm, generate the simulated contour 60 of the second pattern 50 by the optical model, and calculate the first error X and the second error Y between the simulated contour 60 and the first pattern 10, and calculate the edge position placement error by the first error X and the second error Y. Let a=10nm, b=2nm, generate the simulated contour 60 of the second pattern 50 by the optical model, and calculate the first error X and the second error Y between the simulated contour 60 and the first pattern 10, and calculate the edge position placement error by the first error X and the second error Y. Wherein the value range of a and b and the interval of each value can be set manually, for example, the value range of a can be set to be 1-20nm, the interval is 0.5nm, the value range of b is 0-25nm, and the interval is 1nm.
As shown in table 1, the minimum edge position placement error is selected from all the edge position placement errors, and the combination of the first distance a and the second distance b is obtained through the minimum edge position placement error, and the sub-resolution auxiliary graph corresponding to the combination of the first distance a and the second distance b is the optimal second sub-resolution auxiliary graph. Table 1 shows, for example, that for pattern (1), the best a, b is, for example, 10,3, and for pattern (2), the best a, b is, for example, 10,4.
TABLE 2
Referring to table 2, the effect of each regimen was analyzed by comparing comparative examples a to D with inventive example E. Wherein comparative example a is to delete the first sub-resolution auxiliary pattern 20 having a developing risk, comparative example B is to retreat the first sub-resolution auxiliary pattern 20 having a developing risk by 10nm, comparative example C is to change the distance between the first sub-resolution auxiliary pattern 20 and the first pattern 10 from 90nm to 100nm, then to rerun the optical proximity correction method, comparative example D is to change the distance between the first sub-resolution auxiliary pattern 20 and the first pattern 10 by 110nm, and to rerun the optical proximity correction method, and comparative example E is an embodiment of the present application.
Referring to table 2, wherein TTL RMS refers to the integrated edge placement error of the pattern (1) and the pattern (2), SB printing refers to whether the first sub-resolution auxiliary pattern 20 is exposed to the wafer in the two cases of "Normal dose" and "Over dose 10%", respectively, "Normal dose" refers to the Normal exposure energy, "Over dose" refers to the exposure energy increased by 10%, process window refers to the exposure Process window, and "DOF at 8% em" refers to the range of focus values where the exposure energy latitude is 8%, respectively, the larger the focus value range is, the larger the Process window is.
Referring to table 2, it can be seen from the results in table 2 that the technical solution of the present application can obtain a better process window while keeping a lower edge placement error, and more importantly, the technical solution of the present application only changes the place where the sub-resolution auxiliary pattern is easy to develop, without affecting the process window in other places. The technical scheme of the application is particularly suitable for adding the sub-resolution auxiliary pattern based on the rule of 55nm-90nm, and can solve the problem that the sub-resolution auxiliary pattern is easy to be exposed and developed on a substrate due to the fact that the sub-resolution auxiliary pattern is too close after the optical proximity effect is corrected.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above disclosed alternative embodiments of the application are merely intended to help illustrate the application. The preferred embodiments are not exhaustive or to limit the application to the precise form disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, to thereby enable others skilled in the art to best understand and utilize the application. The application is limited only by the claims and the full scope and equivalents thereof.
Claims (8)
1. The method for acquiring the sub-resolution auxiliary graph is characterized by at least comprising the following steps of:
providing an integrated circuit layout, wherein the integrated circuit layout comprises a plurality of first patterns and first sub-resolution auxiliary patterns; the plurality of first sub-resolution auxiliary patterns are arranged on the periphery of the plurality of first patterns, and a minimum distance is reserved between the first sub-resolution auxiliary patterns and the first patterns;
performing optical proximity correction on the first graph to obtain a plurality of second graphs;
dividing the first sub-resolution auxiliary graph into a plurality of sub-graphs along the direction perpendicular to the second graph to obtain a second sub-resolution auxiliary graph, wherein a first distance is arranged between every two adjacent sub-graphs;
moving the sub-graph to the second graph for a second distance, and acquiring an edge position placement error of a simulation contour of the second graph optical model relative to the first graph;
adjusting the first distance and the second distance to obtain a minimum edge position placement error of the simulated contour of the second graph optical model relative to the first graph;
obtaining an optimal second sub-resolution auxiliary graph through the minimum edge position placement error;
wherein the simulated contour of the second graphical optical model has a first error in a horizontal direction relative to the first graph and the simulated contour of the second graphical optical model has a second error in a vertical direction relative to the first graph;
and obtaining the minimum edge position placement error according to the root mean square of the first error and the second error.
2. The method for obtaining a sub-resolution auxiliary pattern according to claim 1, wherein the second sub-resolution auxiliary pattern comprises two sub-patterns.
3. The method for obtaining a sub-resolution auxiliary pattern according to claim 1, wherein the first sub-resolution auxiliary pattern is a rectangle, and the sub-pattern is divided along a long side of the rectangle.
4. The method according to claim 2, wherein the first distance is adjusted in a range from 0 to a length of a long side of the first sub-resolution auxiliary pattern.
5. A method of obtaining a sub-resolution auxiliary pattern according to claim 3, wherein the first distance is adjusted to a distance of 0 to a long side of the first sub-resolution auxiliary pattern.
6. The method for obtaining a sub-resolution auxiliary pattern according to claim 1, wherein the second distance is adjusted in a range from 0 to a distance from the first sub-resolution auxiliary pattern to the second pattern.
7. The method for obtaining sub-resolution auxiliary graphics according to claim 5, wherein the second distance is adjusted by a distance from 0 to the first sub-resolution auxiliary graphics to the second graphics.
8. The method according to claim 1, wherein the first error and the second error are obtained according to the first distance and the second distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011069768.6A CN111983887B (en) | 2020-10-09 | 2020-10-09 | Sub-resolution auxiliary graph acquisition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011069768.6A CN111983887B (en) | 2020-10-09 | 2020-10-09 | Sub-resolution auxiliary graph acquisition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111983887A CN111983887A (en) | 2020-11-24 |
| CN111983887B true CN111983887B (en) | 2023-12-05 |
Family
ID=73450354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011069768.6A Active CN111983887B (en) | 2020-10-09 | 2020-10-09 | Sub-resolution auxiliary graph acquisition method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111983887B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115877650B (en) * | 2023-01-30 | 2023-05-30 | 合肥新晶集成电路有限公司 | Method for adding scattering bars and method for preparing mask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295129A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Optical short distance amending method |
| JP2016024259A (en) * | 2014-07-17 | 2016-02-08 | マイクロン テクノロジー， インク． | Preparation method of mask data, preparation device of mask data and manufacturing method of photo mask and semiconductor data |
| CN111581907A (en) * | 2019-01-30 | 2020-08-25 | 深圳晶源信息技术有限公司 | Hessian-Free photoetching mask optimization method and device and electronic equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001693B2 (en) * | 2003-02-28 | 2006-02-21 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
| US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
-
2020
- 2020-10-09 CN CN202011069768.6A patent/CN111983887B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295129A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Optical short distance amending method |
| JP2016024259A (en) * | 2014-07-17 | 2016-02-08 | マイクロン テクノロジー， インク． | Preparation method of mask data, preparation device of mask data and manufacturing method of photo mask and semiconductor data |
| CN111581907A (en) * | 2019-01-30 | 2020-08-25 | 深圳晶源信息技术有限公司 | Hessian-Free photoetching mask optimization method and device and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111983887A (en) | 2020-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8762900B2 (en) | Method for proximity correction | |
| US6421820B1 (en) | Semiconductor device fabrication using a photomask with assist features | |
| KR102441582B1 (en) | MPC(Mask Process Correction) verification method, and method for fabricating mask comprising the MPC verification method | |
| US20100058282A1 (en) | Method and system for design of a reticle to be manufactured using character projection lithography | |
| US7901845B2 (en) | Method for optical proximity correction of a reticle to be manufactured using character projection lithography | |
| US8607168B2 (en) | Contour alignment for model calibration | |
| KR20110069044A (en) | Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography | |
| US7759026B2 (en) | Method and system for manufacturing a reticle using character projection particle beam lithography | |
| KR20140078686A (en) | Method and system for optimization of an image on a substrate to be manufactured using optical lithography | |
| JP3805936B2 (en) | Mask pattern correction method and mask pattern creation system | |
| US10877380B1 (en) | Using inverse lithography technology in a method of mask data preparation for generating integrated circuit | |
| US8103995B2 (en) | Method for OPC correction | |
| CN110119062B (en) | Optical proximity correction method, mask manufacturing method and patterning process | |
| JP4160203B2 (en) | Mask pattern correction method and recording medium recording mask pattern correction program | |
| CN111812940A (en) | Method for optimizing exposure auxiliary graph in optical proximity effect correction | |
| CN111983887B (en) | Sub-resolution auxiliary graph acquisition method | |
| CN102117010A (en) | Optical adjacent correcting method | |
| JP2004302263A (en) | Method for correcting mask pattern and photomask | |
| JP3054765B2 (en) | Proximity effect correction method for mask manufacturing | |
| TW201308029A (en) | Method and system for forming non-manhattan patterns using variable shaped beam lithography | |
| KR20120124407A (en) | Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes | |
| TWI588595B (en) | Method of optical proximity correction | |
| CN114114826A (en) | Target pattern correction method and mask manufacturing method | |
| US8250495B2 (en) | Mask decomposition for double dipole lithography | |
| CN113109991A (en) | Target layout correction method and mask layout forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240408 Address after: 230000 No. 88, xifeihe Road, Hefei comprehensive free trade zone, Xinzhan District, Hefei City, Anhui Province Patentee after: Nexchip Semiconductor Corporation Country or region after: China Address before: No.18-h1105, Yinchun Road, science and technology R & D base, Maigaoqiao entrepreneurship Park, Qixia District, Nanjing, Jiangsu Province, 210000 Patentee before: Nanjing crystal drive integrated circuit Co.,Ltd. Country or region before: China |