CN111128909A - Radio frequency system micro packaging structure and preparation method thereof - Google Patents
Radio frequency system micro packaging structure and preparation method thereof Download PDFInfo
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- CN111128909A CN111128909A CN201911258671.7A CN201911258671A CN111128909A CN 111128909 A CN111128909 A CN 111128909A CN 201911258671 A CN201911258671 A CN 201911258671A CN 111128909 A CN111128909 A CN 111128909A
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- 238000009462 micro packaging Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000003822 epoxy resin Substances 0.000 claims abstract description 22
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 3
- 238000012858 packaging process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a micro packaging structure of a radio frequency system and a preparation method thereof, belonging to the technical field of integrated circuit packaging. The radio frequency system micro-packaging structure comprises an antenna layer, a chip layer and a welding ball layer which are vertically stacked in sequence; the antenna layer comprises a substrate and antenna array elements manufactured on the top of the substrate; the chip layer comprises epoxy resin, a bare chip arranged inside the chip layer and a vertical metal channel, and the vertical metal channel penetrates through the epoxy resin; and the top surface and the bottom surface of the outside of the chip layer are provided with metal interconnection line structures which are respectively positioned between the antenna layer and the chip layer and between the chip layer and the solder ball layer. The invention can effectively reduce the volume of a radio frequency system and avoid the dispersion of devices by packaging the structures such as the antenna layer, the chip layer, the interconnection wire and the like in a single micro structure by using a wafer-level semiconductor packaging process.
Description
Technical Field
The invention relates to the technical field of integrated circuit packaging, in particular to a radio frequency system micro packaging structure and a preparation method thereof.
Background
The typical radio frequency system comprises functional modules such as an antenna, a transceiver, a signal processor and the like, along with the development of the working frequency of a new generation radio frequency system to millimeter wave and terahertz frequency bands, the frequency of electromagnetic waves is improved, and the wavelength is reduced to millimeter and micron order, so that the sizes of the antenna and transmission line structures in the radio frequency system are continuously reduced; meanwhile, radio frequency devices require systems to integrate more functions in a smaller space, which requires various modules in the radio frequency system to be integrated in a micro-package structure in a micro volume.
The traditional radio frequency system implementation method is that a circuit is built on a circuit board by using a packaged chip, and then a coaxial cable is used for connecting with an antenna assembly, but the radio frequency system is large in size, devices are dispersed, secondary integration facing equipment is not facilitated, and meanwhile, the performance of the radio frequency system is deteriorated by signal loss and parasitic interference caused by the circuit board and the cable, so that adverse effects are caused.
Disclosure of Invention
The invention aims to provide a radio frequency system micro packaging structure and a preparation method thereof, and aims to solve the problems of large volume, device dispersion and radio frequency performance loss of a traditional radio frequency system.
In order to solve the technical problem, the invention provides a micro packaging structure of a radio frequency system, which comprises an antenna layer, a chip layer and a solder ball layer which are vertically stacked in sequence; wherein,
the antenna layer comprises a substrate and antenna array elements manufactured on the top of the substrate;
the chip layer comprises epoxy resin, a bare chip and a vertical metal channel, wherein the bare chip and the vertical metal channel are arranged inside the epoxy resin;
and metal interconnection line structures are arranged on the top surface and the bottom surface of the outside of the chip layer and are respectively positioned between the antenna layer and the chip layer and between the chip layer and the solder ball layer.
Optionally, the substrate is made of glass.
Optionally, the antenna element is made of metal including copper.
Optionally, the vertical metal channel is made of metal including copper.
Optionally, the material of the metal interconnection line structure includes copper and polyimide.
The invention also provides a preparation method of the radio frequency system micro packaging structure, which comprises the following steps:
manufacturing a chip layer, and manufacturing metal interconnection structures on two sides of the chip layer;
manufacturing an antenna layer, and vertically stacking the antenna layer on the top of the chip layer;
and manufacturing a solder ball layer at the bottom of the chip layer to form a single microstructure.
Optionally, the chip layer is manufactured by the following method:
providing epoxy resin, and embedding a bare chip in the epoxy resin through wafer reconstruction and epoxy resin molding processes;
and (3) manufacturing a vertical metal channel through the epoxy resin by punching and a copper electroplating process.
Optionally, the antenna layer is manufactured by the following method:
providing a glass substrate, and manufacturing a metal antenna array element on the glass substrate through metal deposition and photoetching patterning processes to form an antenna layer.
Optionally, vertically stacking the antenna layer on top of the chip layer includes:
and the antenna layer and the chip layer are vertically stacked through wafer-level bonding.
Optionally, the fabricating metal interconnection structures on both sides of the chip layer includes:
and manufacturing a metal interconnection line structure on two sides of the chip layer through polyimide coating, metal deposition and photoetching patterning processes.
The invention provides a radio frequency system micro-packaging structure and a preparation method thereof, wherein the radio frequency system micro-packaging structure comprises an antenna layer, a chip layer and a solder ball layer which are vertically stacked in sequence; the antenna layer comprises a substrate and antenna array elements manufactured on the top of the substrate; the chip layer comprises epoxy resin, a bare chip and a vertical metal channel, wherein the bare chip and the vertical metal channel are arranged inside the epoxy resin; and metal interconnection line structures are arranged on the top surface and the bottom surface of the outside of the chip layer and are respectively positioned between the antenna layer and the chip layer and between the chip layer and the solder ball layer. According to the invention, the antenna layer, the chip layer, the interconnection line and other structures are packaged in a single micro structure by using a wafer-level semiconductor packaging process, so that the volume of a radio frequency system can be effectively reduced, and the dispersion of devices is avoided; the packaging structure can effectively reduce the volume by using a bare chip embedded method, can effectively shorten the interconnection path and improve the radio frequency performance by using a double-sided metal interconnection line structure and a vertical metal channel penetrating through a chip layer structure, and can effectively improve the antenna performance by using glass as an antenna substrate.
Drawings
FIG. 1 is a schematic diagram of a RF system micro-package structure provided in the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a micro package structure of a radio frequency system according to the present invention;
FIG. 3 is a schematic view of a bare chip embedded in epoxy;
FIG. 4 is a schematic illustration of the fabrication of vertical metal vias through epoxy;
FIG. 5 is a schematic diagram of a metal interconnect structure formed on both sides of a chip layer;
fig. 6 is a schematic diagram of an antenna element fabricated on a substrate;
fig. 7 is a schematic diagram of bonding the antenna layer and the chip layer and fabricating a solder ball layer.
Detailed Description
The following describes a radio frequency system micro package structure and a method for manufacturing the same in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example one
The invention provides a radio frequency system micro-packaging structure, which is structurally shown in figure 1 and comprises an antenna layer 1, a chip layer 2 and a solder ball layer 3 which are vertically stacked in sequence.
With continued reference to fig. 1, the antenna layer 1 includes a substrate 11 and an antenna element 12 fabricated on top of the substrate; the substrate 11 is made of glass, and the antenna element may be copper or other metal; the chip layer 2 comprises epoxy resin 21, a bare chip 22 arranged inside the chip layer, and a vertical metal channel 23, wherein the material of the vertical metal channel 23 can be copper or other metals, and the vertical metal channel penetrates through the epoxy resin 21; the top surface and the bottom surface of the outside of the chip layer 2 are provided with metal interconnection line structures 4 respectively located between the antenna layer 1 and the chip layer 2 and between the chip layer 2 and the solder ball layer 3, please continue to refer to fig. 1, and interconnection structures 41 are distributed in the metal interconnection line structures 4. The metal interconnection line structure 4 may be made of copper or polyimide, or may be made of other materials such as aluminum, tungsten-titanium alloy, PDMS (polydimethylsiloxane), or photoresist.
Example two
The invention provides a preparation method of a radio frequency system micro packaging structure, the flow of which is shown in figure 2, and the preparation method comprises the following steps:
step S21, manufacturing a chip layer, and manufacturing metal interconnection structures on two sides of the chip layer;
step S22, manufacturing an antenna layer, and vertically stacking the antenna layer on the top of the chip layer;
step S23, a solder ball layer is formed on the bottom of the chip layer to form a single microstructure.
Providing an epoxy resin 21, embedding a bare chip 22 in the epoxy resin 21 through a wafer reconstitution and epoxy resin molding process, as shown in fig. 3; as shown in fig. 4, a vertical metal channel 23 is formed through the epoxy resin 21 by punching and copper electroplating processes to form a chip layer 2;
referring to fig. 5, on both sides of the chip layer, a metal interconnection structure 4 is fabricated through polyimide coating, metal deposition and photolithography patterning processes; the metal interconnection line structure 4 is distributed with interconnection structures 41;
providing a glass substrate 11, and manufacturing a metal antenna element 12 on the substrate 11 through a metal deposition and photolithography patterning process to form an antenna layer 1, as shown in fig. 6;
finally, as shown in fig. 7, the antenna layer and one side of the chip layer are vertically stacked by wafer-level bonding, and the solder ball layer 3 is formed on the other side of the chip layer, so as to form a single microstructure.
It should be noted that, in the manufacturing method and process of the embodiment of the present invention, specific process steps are not limited to the above process steps, for example, the number of chips is different, the antenna structure is different in form, and the process steps adopted are different and can be modified according to specific situations.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A radio frequency system micro packaging structure is characterized by comprising an antenna layer (1), a chip layer (2) and a solder ball layer (3) which are vertically stacked in sequence; wherein,
the antenna layer (1) comprises a substrate (11) and an antenna array element (12) manufactured on the top of the substrate;
the chip layer (2) comprises epoxy resin (21), a bare chip (22) arranged inside and a vertical metal channel (23), wherein the vertical metal channel (23) penetrates through the epoxy resin (21);
and metal interconnection line structures (4) are arranged on the top surface and the bottom surface of the outside of the chip layer (2) and are respectively positioned between the antenna layer (1) and the chip layer (2) and between the chip layer (2) and the solder ball layer (3).
2. The radio frequency system micro package structure according to claim 1, wherein the substrate (11) is made of glass.
3. The radio frequency system micro package structure of claim 1, wherein the antenna element (12) is made of a metal including copper.
4. The radio frequency system micro package structure of claim 1, wherein the vertical metal via (23) is made of a metal including copper.
5. The radio frequency system micro package structure according to claim 1, wherein the material of the metal interconnect structure (4) comprises copper and polyimide.
6. A preparation method of a radio frequency system micro packaging structure is characterized by comprising the following steps:
manufacturing a chip layer, and manufacturing metal interconnection structures on two sides of the chip layer;
manufacturing an antenna layer, and vertically stacking the antenna layer on the top of the chip layer;
and manufacturing a solder ball layer at the bottom of the chip layer to form a single microstructure.
7. The method for fabricating a micro-package structure of a radio frequency system as claimed in claim 6, wherein the chip layer is fabricated by:
providing epoxy resin, and embedding a bare chip in the epoxy resin through wafer reconstruction and epoxy resin molding processes;
and (3) manufacturing a vertical metal channel through the epoxy resin by punching and a copper electroplating process.
8. The method for manufacturing a radio frequency system micro package structure according to claim 6, wherein the antenna layer is manufactured by the following method:
providing a glass substrate, and manufacturing a metal antenna array element on the glass substrate through metal deposition and photoetching patterning processes to form an antenna layer.
9. The method of claim 6, wherein vertically stacking the antenna layer on top of the chip layer comprises:
and the antenna layer and the chip layer are vertically stacked through wafer-level bonding.
10. The method of claim 6, wherein the fabricating metal interconnect structures on both sides of the chip layer comprises:
and manufacturing a metal interconnection line structure on two sides of the chip layer through polyimide coating, metal deposition and photoetching patterning processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911258671.7A CN111128909A (en) | 2019-12-10 | 2019-12-10 | Radio frequency system micro packaging structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911258671.7A CN111128909A (en) | 2019-12-10 | 2019-12-10 | Radio frequency system micro packaging structure and preparation method thereof |
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| CN111128909A true CN111128909A (en) | 2020-05-08 |
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| CN201911258671.7A Pending CN111128909A (en) | 2019-12-10 | 2019-12-10 | Radio frequency system micro packaging structure and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113871355A (en) * | 2020-06-30 | 2021-12-31 | 华为技术有限公司 | Packaging structure, electronic equipment and preparation method of packaging structure |
| WO2022012523A1 (en) * | 2020-07-13 | 2022-01-20 | 矽磐微电子(重庆)有限公司 | Semiconductor packaging method and semiconductor packaging structure |
| CN113964110A (en) * | 2021-09-24 | 2022-01-21 | 西安电子科技大学 | Embedded wafer level ball grid array package antenna structure based on embedded Z line |
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| CN110491863A (en) * | 2018-05-14 | 2019-11-22 | 联发科技股份有限公司 | Semiconductor package |
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2019
- 2019-12-10 CN CN201911258671.7A patent/CN111128909A/en active Pending
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| CN1384561A (en) * | 2001-05-08 | 2002-12-11 | 中华映管股份有限公司 | Transparent antenna for radio mobile communication terminal and its making process |
| CN107093598A (en) * | 2016-02-17 | 2017-08-25 | 英飞凌科技股份有限公司 | Semiconductor device including antenna |
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Application publication date: 20200508 |