CN110299587A - A kind of SIW filter and HMSIW filter based on the load of uniform impedance resonator - Google Patents
A kind of SIW filter and HMSIW filter based on the load of uniform impedance resonator Download PDFInfo
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- CN110299587A CN110299587A CN201910652491.0A CN201910652491A CN110299587A CN 110299587 A CN110299587 A CN 110299587A CN 201910652491 A CN201910652491 A CN 201910652491A CN 110299587 A CN110299587 A CN 110299587A
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- siw
- impedance resonator
- uniform impedance
- hmsiw
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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Abstract
The invention discloses a kind of SIW filters and HMSIW filter based on the load of uniform impedance resonator, including substrate, substrate include upper and lower surfaces, further include microstrip line construction；The upper surface of base plate is provided with SIW structure or HMSIW structure, and has rectangular channel in SIW structure or HMSIW structure intermediate etch, constitutes uniform impedance resonator；The uniform impedance resonator and microstrip line construction form the half-wave resonator of two terminal short circuits in substrate surface or a quarter broadcasts resonator, and constitutes second-order bandpass filter.It can be while realizing miniaturization using the present invention, and can be realized Wide stop bands rejection.
Description
Technical field
The present invention relates to wireless communication technology field, in particular to a kind of based on the load of uniform impedance resonator
SIW filter and HMSIW filter.
Background technique
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) filter is due to its excellent property
Can, the advantages of not only having maintained conventional waveguide filter high q-factor, filter with low insertion loss, but also have both the low section of PCB circuit, easy processing,
The characteristics such as it is easily integrated；In microwave and millimeter wave field now, SIW filter achieves broad application prospect.Various informative,
SIW filter with different function has been used in all kinds of radio frequency microwave systems, such as wireless communication, radar, remote sensing,
Aerospace etc..Especially in mobile communication field, as technology is regardless of innovation, increasingly developed 4G, 5G communication technology, Yi Jiwei
Carry out the widely available of Internet of Things, the demand to filter will be further increased, this be bound to will to filter performance propose it is higher
Requirement, such as miniaturization, integrated, highly selective, multi-pass band, reconfigurability.
In terms of SIW filter Miniaturization Design, the miniaturization technology of mainstream specifically includes that 1/n die cut technology, multilayer
Folding, loading technique.Based on the SIW filter of 1/n die cut technology, method be along the full mould of SIW center line into
Row cutting, cut sides are equivalent to virtual magnetic wall.Filter after being cut, the transmission that can either retain original mode are special
Property, and volume can be reduced.In terms of the Miniaturization Research cut in mode, mainly it is with half module SIW, a quarter mould SIW
It is main, so that filter area reduces half and a quarter respectively.In addition, with 1/8th moulds, that 1/16th mould is SIW is small
Typeization also has certain research.SIW filter based on multilayer folding technology, this method pass through horizontal symmetrical face for multiple single layers
PCB circuit folding obtain so that filter slightly increase section in the case where so that area strongly reduces.Now generally adopt
With the mode of double-layer folding, so that area reduces half.SIW filter miniaturization based on loading technique, principle is to pass through
Metal-loaded or metamaterial structure cause to disturb to field distribution in SIW resonant cavity, so that resonance frequency reduces, to realize
Miniaturization.Such as loaded using Meta Materials, complementary openings resonant ring (Complementary Split-Ring Resonator,
CSRR) as a kind of magnetic Meta Materials, the cutoff frequency of SIW can effectively be broken through by being loaded into SIW resonant cavity surface, make it
Resonance is in SIW cutoff frequency hereinafter, to realize miniaturization.
SIW filter Miniaturization Design based on 1/n die cut technology still remains the most of special of waveguide filter
Property.And waveguide filter it is more apparent the disadvantage is that, high-order mode resonance frequency can filtered from main mould resonance frequency relative close
Many parasitic passbands are formed outside wave device passband, are reduced the Out-of-band rejection performance of filter, are made under the overall performance of filter
Drop.
And the SIW filter based on multilayer folding technology, due to the circuit structure of its double-deck even multilayer, so that processing work
Skill is complicated, and repeatedly folding is also more sensitive to machining accuracy, thus to processing and manufacturing, more stringent requirements are proposed, while also increasing
Cost.
SIW filter miniaturization based on loading technique, equally also faces higher modes and leads to the problem of parasitic passband.Example
Such as, the SIW filter based on CSRR load, can break through SIW filter cutoff frequency, in cutoff frequency passband formed below；
But due to the TE of SIW101The propagation of mould makes the main mould TE of SIW instead101Mould forms parasitic passband, to influence filter
Whole Out-of-band rejection performance.
Summary of the invention
The purpose of the present invention is to provide a kind of SIW filters based on the load of uniform impedance resonator, by SIW table
Face etches uniform impedance resonator (Uniform Impedance Resonator, UIR) structure, thus constitutes a second order
Bandpass filter, and can be realized Wide stop bands rejection.
To reach above-mentioned technical purpose, the technical solution adopted by the present invention is specific as follows:
A kind of SIW filter based on the load of uniform impedance resonator, including substrate, substrate include upper surface and following table
Face, it is characterised in that: further include microstrip line construction；The upper surface of base plate is provided with SIW structure, and carves among SIW structure
Erosion has rectangular channel, constitutes uniform impedance resonator；The uniform impedance resonator and microstrip line construction are in substrate surface formation two
The half-wave resonator of a terminal short circuit, and constitute second-order bandpass filter.
Further, the uniform impedance resonator is elongate rectangular, and passes through the length and SIW of uniform impedance resonator
Structure width controls resonance frequency.
Further, the microstrip line construction includes the microstrip line respectively as input and output side, and microstrip line close to
One end of SIW structure is provided with couple feed line, and couple feed line is vertical with microstrip line construction.
Further, there are spacing between the couple feed line and SIW structure, and pass through the spacing and couple feed line
Length control external sort factor.
Further, the substrate both ends are provided with multiple metallization VIAs, and the upper and lower surface of substrate pass through it is multiple
Metallization VIA connection.
The invention also discloses a kind of HMSIW (Half mode Substrate based on the load of uniform impedance resonator
Integrated Waveguide, half module substrate integrated wave guide) filter, it can reduce filter size, it is same to realize filtering
Device connects Wide stop bands rejection.
A kind of HMSIW filter based on the load of uniform impedance resonator, it is characterised in that: including substrate, be arranged in base
HMSIW structure on plate, and HMSIW structure two sides are provided with microstrip line construction；The HMSIW structure intermediate etch has rectangle
Slot constitutes uniform impedance resonator；The uniform impedance resonator and microstrip line construction form two short-circuit quarter-waves
Thus long resonator constitutes a second order filter.
Further, the uniform impedance resonator is elongate rectangular, and by the length of uniform impedance resonator and
HMSIW structure width controls resonance frequency.
Further, the microstrip line construction includes the microstrip line respectively as input and output side, and microstrip line close to
One end of HMSIW structure is provided with couple feed line, and couple feed line is vertical with microstrip line construction.
Further, described substrate one end is provided with multiple metallization VIAs, and the upper and lower level of the substrate pass through it is multiple
Metallization VIA connection.
The beneficial effects of the present invention are: the present invention is different from the prior art, the present invention provides two kinds of technical solutions,
A kind of scheme is that the SIW based on SIW structure, based on UIR load minimizes scheme.By making in SIW surface etch UIR structure
The half-wave resonator that SIW is equivalent to two terminal short circuits is obtained, to constitute a second order filter.Adjust SIW broadside and
The length of UIR, the centre frequency of adjustable filter；The longitudinal length of SIW has little effect filter, thus can be with
Longitudinal length is done it is small, to realize the Miniaturization Design of SIW filter；UIR, which loads SIW filter, has Wide stop bands inhibition
Energy.First higher modes of filter are TE301Mould, since the longitudinal length of SIW filter can be made very small, thus its is humorous
Vibration frequency is close to 3f0, f0For the centre frequency of filter passband, the Wide stop bands rejection of nearly 3 octave may be implemented.
Second scheme is further size reduction on the basis of the first scheme, proposes a kind of UIR load
HMSIW filter.By in HMSIW surface etch UIR structure, so that HMSIW is equivalent to two short-circuit quarter-waves
Resonator, the structure make filter reduce half with respect to SIW, further realize the Miniaturization Design of filter；UIR load
HMSIW filter equally has Wide stop bands rejection.Similar with the SIW of UIR load, which equally has nearly 3 times of width
Stopband rejection.Especially since the edge effect of the cut sides of half-module chip, can make TE301The resonance frequency liter of mould
Height, to realize broader stopband rejection.
Detailed description of the invention
Fig. 1 is the floor map of the SIW filter provided by the invention based on the load of uniform impedance resonator；
Fig. 2 is the S parameter of SIW the filter emulation and test provided by the invention based on the load of uniform impedance resonator
(5-15GHz) schematic diagram；
Fig. 3 is the S parameter of SIW the filter emulation and test provided by the invention based on the load of uniform impedance resonator
(5-30GHz) schematic diagram；
Fig. 4 is the floor map of the HMSIW filter provided by the invention based on the load of uniform impedance resonator；
Fig. 5 is the S parameter of HMSIW the filter emulation and test provided by the invention based on the load of uniform impedance resonator
(5-15GHz) schematic diagram；
Fig. 6 is the S parameter of HMSIW the filter emulation and test provided by the invention based on the load of uniform impedance resonator
(5-30GHz) schematic diagram.
Appended drawing reference:
1, microstrip line construction；2, couple feed line；3, rectangular channel；4, metallization VIA.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
In the present invention, term for example "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", " side ",
The orientation or positional relationship of the instructions such as "bottom" is to be based on the orientation or positional relationship shown in the drawings, only to facilitate describing this hair
Bright each component or component structure relationship and the relative of determination, not refer in particular to either component or element in the present invention, cannot understand
For limitation of the present invention.
The present invention is described in further detail below through specific implementation examples and in conjunction with the accompanying drawings.
As shown in Figure 1-Figure 3, embodiment one:
A kind of SIW filter based on the load of uniform impedance resonator, including substrate, substrate include upper surface and following table
Face further includes microstrip line construction 1；The upper surface of base plate is provided with SIW structure, and has rectangular channel in SIW structure intermediate etch
3, constitute uniform impedance resonator；The uniform impedance resonator and microstrip line construction 1 are short in two terminals of substrate surface formation
The half-wave resonator on road, and constitute second-order bandpass filter.
The uniform impedance resonator is elongate rectangular, and passes through the length and SIW structure width of uniform impedance resonator
Control resonance frequency.
The microstrip line construction 1 includes the microstrip line respectively as input and output side, and microstrip line is close to SIW structure
One end be provided with couple feed line 2, and couple feed line 2 is vertical with microstrip line construction 1.The couple feed line 2 and SIW is tied
There are spacing between structure, and control external sort factor by the spacing and the length of couple feed line 2.
The substrate both ends are provided with multiple metallization VIAs 4, and the upper and lower surface of substrate was metallized by multiple
Hole 4 connects.
Present embodiment in actual use, uses Rogers5880 substrate, relative dielectric constant 2.2, loss angle
It is just cut to 0.0009, with a thickness of 0.508mm, substrate upper and lower surface applies copper, and lower surface monolith applies copper.Upper surface passes through with lower surface
The periodical metallization VIA 4 of two sides is connected.Substrate based on the structure of traditional SIW.
On the surface SIW, the UIR structure an of rectangular elongated shape is etched, the two sides SIW are metallization VIA 4, and diameter is
0.4mm, spacing 0.7mm.Characteristic impedance is that the microstrip line of 50 Ω is connected with a perpendicular couple feed line 2, passes through coupling
Conjunction mode is fed to SIW, and microstrip line is located at the center SIW.The SIW filter of UIR load constitutes a second order filter,
By adjusting the width of SIW and the length of UIR, make the centre frequency 10GHz of filter passband, the spacing and coupling of couple feed
The length for closing feed line 2 determines external sort factor.
By optimizing suitable structural parameters, as shown in Fig. 2, available centre frequency is the bandpass filter of 10GHz
Response, bandwidth is about 1.22GHz.The filter has wider Stopband Performance, had more than within the scope of 26GHz 20dB with outer suppression
Performance processed, such as the emulation and test result of Fig. 3.Meas curve is test curve in Fig. 2 and Fig. 3, and sim curve is simulation curve.
The size of filter is only 0.54 λg*0.15λg, λgAccomplish small-sized while assurance function for waveguide wavelength
Change.
As shown in Figure 4-Figure 6, embodiment two:
A kind of HMSIW filter based on the load of uniform impedance resonator, including substrate, the HMSIW being disposed on the substrate
Structure, and HMSIW structure two sides are provided with microstrip line construction 1；The HMSIW structure intermediate etch has rectangular channel 3, constitutes equal
Even electric impedance resonator；The uniform impedance resonator and microstrip line construction 1 form two short-circuit quarter-wave resonance devices,
Thus a second order filter is constituted.
The uniform impedance resonator is elongate rectangular, and passes through the length of uniform impedance resonator (n in figure2) and
HMSIW structure width controls resonance frequency.The microstrip line construction 1 includes the microstrip line respectively as input and output side, and
One end of microstrip line close to HMSIW structure is provided with couple feed line 2, and couple feed line 2 is vertical with microstrip line construction 1.
Described substrate one end is provided with multiple metallization VIAs 4, and the upper and lower level of the substrate was metallized by multiple
Hole 4 connects.
In actual use, which is to cut half along center on the basis of SIW filter to present embodiment
Obtained from, in HMSIW surface etch UIR structure, only there are metallization VIA 4, diameter 0.4mm, spacing 0.75mm in side.
Characteristic impedance is that the microstrip line (3) of 50 Ω is connected with an elongated couple feed line 2, is presented by way of coupling to HMSIW
Electricity.The HMSIW filter of UIR load constitutes a second order filter to be made by adjusting the broadside of HMSIW and the length of UIR
The centre frequency resonance of filter is obtained in 10GHz.
By optimizing suitable structural parameters, as shown in figure 5, finally obtaining, centre frequency is 10GHz, bandwidth is about
1.26GHz Bandpass Filters response.As shown in fig. 6, the filter has wider stopband rejection, first is parasitic logical
Band appears in the position more than 30GHz, and in 30GHz, Out-of-band rejection performance is below -18dB.In Fig. 5 and Fig. 6, meas curve
For test curve, sim curve is simulation curve.
In the present embodiment, size is only 0.25 λg*0.14λg, λgFor waveguide wavelength.Equally meeting the same of miniaturization
When, it ensure that its rejection.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of SIW filter based on the load of uniform impedance resonator, including substrate, substrate include upper and lower surfaces,
It is characterized by also including microstrip line constructions；The upper surface of base plate is provided with SIW structure, and has in SIW structure intermediate etch
Rectangular channel constitutes uniform impedance resonator；The uniform impedance resonator and microstrip line construction are at substrate surface two ends of formation
The half-wave resonator of terminal shortcircuit, and constitute second-order bandpass filter.
2. the SIW filter according to claim 1 based on the load of uniform impedance resonator, it is characterised in that: described equal
Even electric impedance resonator is elongate rectangular, and controls resonance frequency by the length of uniform impedance resonator and SIW structure width.
3. the SIW filter according to claim 1 based on the load of uniform impedance resonator, it is characterised in that: described micro-
Strip line structure includes the microstrip line respectively as input and output side, and one end of microstrip line close to SIW structure is provided with coupling
Feed line is closed, and couple feed line is vertical with microstrip line construction.
4. the SIW filter according to claim 3 based on the load of uniform impedance resonator, it is characterised in that: the coupling
There are spacing between conjunction feed line and SIW structure, and control external sort factor by the spacing and the length of couple feed line.
5. the SIW filter according to claim 1 based on the load of uniform impedance resonator, it is characterised in that: the base
Board ends are provided with multiple metallization VIAs, and the upper and lower surface of substrate is connected by multiple metallization VIAs.
6. a kind of HMSIW filter based on the load of uniform impedance resonator, it is characterised in that: including substrate, be arranged in substrate
On HMSIW structure, and HMSIW structure two sides are provided with microstrip line construction；The HMSIW structure intermediate etch has rectangle
Slot constitutes uniform impedance resonator；The uniform impedance resonator and microstrip line construction form two short-circuit quarter-waves
Thus long resonator constitutes a second order filter.
7. the HMSIW filter according to claim 6 based on the load of uniform impedance resonator, it is characterised in that: described
Uniform impedance resonator is elongate rectangular, and controls resonance frequency by the length of uniform impedance resonator and HMSIW structure width
Rate.
8. the HMSIW filter according to claim 6 based on the load of uniform impedance resonator, it is characterised in that: described
Microstrip line construction includes the microstrip line respectively as input and output side, and microstrip line is arranged close to one end of HMSIW structure
There is couple feed line, and couple feed line is vertical with microstrip line construction.
9. the HMSIW filter according to claim 6 based on the load of uniform impedance resonator, it is characterised in that: described
Substrate one end is provided with multiple metallization VIAs, and the upper and lower level of the substrate is connected by multiple metallization VIAs.
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Cited By (1)
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| CN115173018A (en) * | 2022-06-15 | 2022-10-11 | 电子科技大学(深圳)高等研究院 | Resonator structure and integrated structure suitable for millimeter wave band passive filter |
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