CN118422142A - High-strength and high-toughness fiber reinforced TiAl/Ti3Al multilayer composite material and preparation method and application thereof - Google Patents
High-strength and high-toughness fiber reinforced TiAl/Ti3Al multilayer composite material and preparation method and application thereof Download PDFInfo
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- 229910010038 TiAl Inorganic materials 0.000 title claims abstract description 137
- 239000000835 fiber Substances 0.000 title claims abstract description 112
- 239000011185 multilayer composite material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910021330 Ti3Al Inorganic materials 0.000 title description 10
- 239000010410 layer Substances 0.000 claims abstract description 148
- 239000002131 composite material Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000011825 aerospace material Substances 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 88
- 238000000151 deposition Methods 0.000 claims description 55
- 239000002243 precursor Substances 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 45
- 229910052786 argon Inorganic materials 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 43
- 239000013077 target material Substances 0.000 claims description 36
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 31
- 238000001513 hot isostatic pressing Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 28
- 238000007747 plating Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 15
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000011229 interlayer Substances 0.000 abstract description 2
- 230000002028 premature Effects 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 description 94
- 230000001105 regulatory effect Effects 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 17
- 230000001276 controlling effect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910021362 Ti-Al intermetallic compound Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 210000002777 columnar cell Anatomy 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5886—Mechanical treatment
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- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material and a preparation method and application thereof, and belongs to the technical field of aerospace materials. According to the invention, the Cr layer interface toughening layer is introduced between the SiC fiber and the TiAl matrix, so that the mechanical embedding of the composite material interface is optimized, and the bonding strength of the interface is improved. The interface engineering not only improves the stability of the material and avoids the premature failure of the interface in the stress process, but also can play a role in blocking the diffusion of the interface, and can also enhance the toughness of the material. According to the invention, a TiAl/Ti 3 Al multilayer structure is constructed in a matrix, tiAl and Ti 3 Al layers are alternately arranged, and a high-toughness composite structure is formed through the actions of an interlayer interface and a toughening layer. When the material is subjected to external force, the Ti 3 Al layer can absorb and disperse stress and prevent crack growth, so that the overall toughness of the material is improved.
Description
Technical Field
The invention relates to the technical field of aerospace materials, in particular to a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, and a preparation method and application thereof.
Background
With the rapid development of aerospace technology, the demand for high performance composite materials is increasing. The aerospace field has higher and higher requirements on materials, and the materials are required to have the characteristics of light weight, high strength, high rigidity, high temperature resistance, abrasion resistance and the like. Conventional metallic materials have had difficulty meeting these requirements, thus creating SiC f/Ti-based composites. The novel material is widely used in the aerospace field with its unique properties such as extremely high strength and stiffness, excellent heat resistance and abrasion resistance, and its lighter weight than conventional metals. However, with the development of the aerospace industry, more stringent requirements are placed on the thermal environment adaptation capability of the hot end component structural materials.
At present, the service temperature of the SiC f/Ti-based composite material is strongly limited by the softening temperature of the matrix titanium alloy. The TiAl intermetallic compound has the performances of higher service temperature, high-temperature stability, low density, good creep resistance, excellent oxidation resistance, corrosion resistance, high specific strength and the like, and can be used as an ideal matrix material of the composite material. Although the TiAl alloy has high service temperature, the high brittleness of the TiAl alloy can lead the prepared composite material to show brittle fracture behavior, thereby severely limiting the improvement of the mechanical properties of the composite material. In addition, since there are significant differences in the elongation and thermal expansion coefficients of the continuous SiC fibers and TiAl, when the composite material is stretched or compressed by an external force, the SiC fibers and the TiAl matrix deform to different extents, which may cause a stress concentration phenomenon between the SiC fibers and the TiAl, thereby causing interfacial delamination or cracking.
Disclosure of Invention
In view of the above, the invention aims to provide a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, and a preparation method and application thereof. The high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material provided by the invention has good overall toughness and higher room temperature and high temperature tensile strength, and can be used as a light high-strength and high-toughness composite material in the field of aerospace.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, which comprises the following steps:
(1) Carrying out ion cleaning on the SiC fiber containing the carbon coating under the argon condition to obtain a pretreated SiC fiber;
(2) Performing magnetron sputtering on the pretreated SiC fiber under the argon condition by taking Cr as a target material to obtain the SiC fiber deposited with the Cr interface toughening layer;
(3) Performing magnetron sputtering on the SiC fiber deposited with the Cr interface toughening layer under the argon condition by taking TiAl alloy and Ti 3 Al alloy as target materials, and alternately depositing TiAl layers and Ti 3 Al layers on the surface of the SiC fiber deposited with the Cr interface toughening layer to obtain a precursor wire with a multilayer structure;
(4) And uniformly distributing the precursor wires with the multilayer structure, and performing hot isostatic pressing to obtain the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material.
Preferably, the ion cleaning is performed in a coating chamber of a magnetron sputtering system; the argon flow is 50-70 sccm, the ion source voltage is 700-900V, and the cleaning time is 15-30 min.
Preferably, the parameters of the magnetron sputtering in the step (2) include:
argon flow is 50-100 sccm;
The pressure of the gas in the film plating chamber is 0.6 Pa to 1.2Pa;
The power bias voltage is-40 to-200V;
the power supply current is 0.9-1.2A;
the power is 300-400W;
The deposition rate is 0.4-1.6 mu m/h.
Preferably, in the SiC fiber containing the carbon coating, the diameter of the SiC fiber is 90-110 mu m, and the thickness of the carbon coating is 2-4 mu m;
The thickness of the Cr interface toughening layer is 0.5-4 mu m.
Preferably, the step (3) of magnetron sputtering the target includes:
In the process of depositing the TiAl layer, the flow of argon is 50-100 sccm, the pressure of gas in a film plating chamber is 0.6-1.2 Pa, the power bias is-40 to-200V, the power current is 1.6-2.4A, the power is 700-800W, and the deposition rate is 2-4 mu m/h;
in the process of depositing the Ti 3 Al layer, the flow rate of argon is 50-100 sccm, the pressure of gas in a film plating chamber is 0.6-1.2 Pa, the power bias voltage is-40 to-200V, the power current is 1.6-2.4A, the power is 700-1000W, and the deposition rate is 2-5 mu m/h.
Preferably, the repetition period of alternately depositing TiAl layers and Ti 3 Al layers is more than or equal to 4 by taking TiAl+Ti 3 Al as one period;
the thickness of the single-layer TiAl layer is 2-5 mu m, and the thickness of the single-layer Ti 3 Al layer is 2-5 mu m.
Preferably, in the precursor wire with a multilayer structure, the total thickness of the surface film layer of the SiC fiber is 20-40 μm.
Preferably, the hot isostatic pressing is vacuum hot isostatic pressing; the temperature of the hot isostatic pressing is 950-980 ℃, the pressure is 120-180 MPa, and the time is 1-3h.
The invention provides a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material prepared by the preparation method, which is prepared by carrying out hot isostatic pressing on a precursor wire with a multilayer structure, wherein the precursor wire with a single multilayer structure sequentially comprises SiC fibers, a carbon coating, a Cr interface toughening layer, and alternating TiAl layers and Ti 3 Al layers from inside to outside.
The invention provides application of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material as an aerospace material.
The invention provides a preparation method of a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, which comprises the steps of firstly depositing a layer of transition metal Cr serving as an interface toughening layer on the surface of a continuous SiC fiber with a carbon coating (C coating) by a magnetron sputtering technology; alternately depositing TiAl and Ti 3 Al multilayer coatings on the Cr layer to serve as precursor wires; finally, the precursor wire arrangement is subjected to hot isostatic pressing to obtain the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, which is named as SiC f/C/Cr/(TiAl/Ti3Al)n. According to the invention, the Cr layer interface toughening layer is introduced between the SiC fiber and the TiAl matrix, so that the mechanical embedding of the composite material interface is optimized, and the bonding strength of the interface is improved. The interface engineering not only improves the stability of the material and avoids the premature failure of the interface in the stress process, but also can play a role in blocking the diffusion of the interface, and can also enhance the toughness of the material. The principle of introducing beta-Ti stabilizing element (Cr) between SiC fiber and TiAl is as follows: because the Cr element has better toughness, the Cr element can be used as a buffer material, stress concentration caused by the difference of the elongation rates of SiC fibers and TiAl is relieved, and the interface toughness is improved. In addition, cr element can induce the formation of beta-Ti phase in adjacent TiAl. The beta-Ti phase is a stable crystal structure, has good ductility and toughness, and is beneficial to improving the toughness of the composite material.
Meanwhile, the TiAl/Ti 3 Al multilayer structure is constructed in the matrix, so that the toughness of the composite material can be effectively improved. The multi-layer structure fully utilizes the advantages of two intermetallic compounds of TiAl and Ti 3 Al, and in the multi-layer structure, tiAl and Ti 3 Al layers are alternately arranged, and a high-toughness composite structure is formed through the actions of an interlayer interface and a toughening layer. When the material is subjected to external force, the Ti 3 Al layer can absorb and disperse stress and prevent crack growth, so that the overall toughness of the material is improved. The invention introduces a Ti 3 Al layer into a TiAl matrix to construct a TiAl/Ti 3 Al multilayer structure, which has the principle that: ti 3 Al and TiAl belong to Ti-Al intermetallic compounds and are the same in element, so that the Ti-Al intermetallic compounds and the TiAl have higher compatibility and can be well combined together. The invention constructs a multi-layer structure to form a heterogeneous interface. In addition, the toughness of Ti 3 Al is better, and larger deformation can be generated without fracture when external force is applied. Therefore, by constructing the TiAl/Ti 3 Al composite material, the invention can combine the advantages of the two materials, not only maintains the excellent heat resistance and light weight characteristics of the TiAl, but also utilizes the high toughness of the Ti 3 Al, thereby effectively improving the overall performance of the composite material and effectively solving the problems of mismatching and brittleness of the composite material.
The introduction of the interface toughening layer and the matrix toughening layer enables the material to resist more strict conditions, is beneficial to improving the performance of the composite material and enhances the application potential of the composite material in high-temperature and high-stress environments.
Drawings
FIG. 1 is a flow chart of the preparation of a high strength and toughness fiber reinforced TiAl/Ti 3 Al multilayer composite;
FIG. 2 is a SEM image of the cross-section of a precursor wire obtained in example 1;
FIG. 3 is a SEM image of the cross-section of the precursor wire obtained in comparative example 1;
FIG. 4 is a SEM image of the cross-section of a precursor wire obtained in comparative example 2;
FIG. 5 is a cross-sectional SEM photograph of a composite material obtained in example 1;
FIG. 6 is a cross-sectional SEM photograph of the composite material obtained in comparative example 1;
FIG. 7 is a cross-sectional SEM photograph of the composite material obtained in comparative example 2;
FIG. 8 is a graph showing the tensile strength of the composite materials obtained in example 1, comparative example 1 and comparative example 2.
Detailed Description
The invention provides a preparation method of a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material, which comprises the following steps:
(1) Carrying out ion cleaning on the SiC fiber containing the carbon coating under the argon condition to obtain a pretreated SiC fiber;
(2) Performing magnetron sputtering on the pretreated SiC fiber under the argon condition by taking Cr as a target material to obtain the SiC fiber deposited with the Cr interface toughening layer;
(3) Performing magnetron sputtering on the SiC fiber deposited with the Cr interface toughening layer under the argon condition by taking TiAl alloy and Ti 3 Al alloy as target materials, and alternately depositing TiAl layers and Ti 3 Al layers on the surface of the SiC fiber deposited with the Cr interface toughening layer to obtain a precursor wire with a multilayer structure;
(4) And uniformly distributing the precursor wires with the multilayer structure, and performing hot isostatic pressing to obtain the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material.
According to the invention, the SiC fiber containing the carbon coating is subjected to ion cleaning under the argon condition, so that the pretreated SiC fiber is obtained. In the present invention, in the SiC fiber containing a carbon coating layer, the diameter of the SiC fiber is preferably 90 to 110 μm, more preferably 100 μm; the thickness of the carbon coating is preferably 2 to 4. Mu.m, more preferably 3. Mu.m.
In the present invention, the SiC fiber preferably contains a tungsten core (W core) having a diameter of preferably 10 to 20 μm, more preferably 15 μm.
The source of the SiC fiber containing the carbon coating is not particularly required, and the SiC fiber containing the carbon coating can be commercially available or prepared by oneself. When self-preparing SiC fibers containing C-coating, the preparation method generally uses Chemical Vapor Deposition (CVD) to prepare continuous SiC fibers. The method is to prepare continuous W-core SiC fibers by depositing a SiC shell layer on a W wire through pyrolysis of a mixture system (such as ：MTS(CH3SiCl3)+DCMS(CH3SiHCl2)+H2、MTS+H2、DCMS+H2、DCMS+H2+C3H6)) of a silicon-containing organic matter and H 2 at a high temperature of more than 1000 ℃ and then depositing a C coating with a thickness of preferably 2-4 mu m on the surface of the SiC shell layer through a CVD method.
In the invention, the ion cleaning is preferably performed in a coating chamber of a magnetron sputtering system. In the present invention, the argon flow rate during the ion cleaning is preferably 50 to 70sccm, more preferably 60sccm; the ion source voltage is preferably 700 to 900V, more preferably 800V; the washing time is preferably 15 to 30 minutes, more preferably 20 to 25 minutes.
In the present invention, the specific operation of the ion cleaning preferably includes the steps of:
Uniformly arranging SiC fibers containing a carbon coating on a sample frame of a coating chamber of a magnetron sputtering system, opening a sample frame rotation switch when the vacuum degree in the coating chamber is lower than 5 multiplied by 10 -4 Pa, and introducing argon gas to control the air pressure in the coating chamber to be 0.6-1.2 Pa. And (3) switching on an ion source power supply, regulating the voltage to about 100-200V, then regulating the argon flow to change the ion source voltage to 700-900V, cleaning for 15-30 min, and switching off the ion source to finish cleaning.
In the invention, the SiC fibers containing the carbon coating are uniformly distributed on the sample holder, and the distance between adjacent fibers is preferably 0.1-0.4 mm, more preferably 0.2-0.3 mm.
In the invention, the Cr target, the TiAl target, the Ti 3 Al target and the SiC fiber are preferably placed in a coating chamber of a multi-target magnetron sputtering system to carry out ion cleaning together. In the invention, the sample holder is preferably positioned at a target middle position in the magnetron sputtering system. In the present invention, the rotation rate of the sample holder is preferably 1 to 5r/min, more preferably 2 to 4r/min. According to the invention, through the ion cleaning, impurities such as oil stains on the surfaces of the target material and the SiC fibers can be washed away, and the combination of the SiC fibers and the Cr layer can be promoted.
After the ion cleaning, the invention uses Cr as a target material, and carries out magnetron sputtering on the pretreated SiC fiber under the argon condition to obtain the SiC fiber deposited with the Cr interface toughening layer. In the present invention, the parameters of the magnetron sputtering preferably include:
The flow rate of argon is preferably 50 to 100sccm, more preferably 60 to 80sccm;
the gas pressure in the film plating chamber is preferably 0.6 to 1.2Pa, more preferably 0.8 to 1Pa;
the power bias voltage is preferably-40 to-200V, more preferably-80 to-160V;
the power supply current is preferably 0.9 to 1.2A, more preferably 1 to 1.1A;
the power is preferably 300 to 400W, more preferably 320 to 360W;
The deposition rate is preferably 0.4 to 1.6. Mu.m/h, more preferably 0.8 to 1.2. Mu.m/h.
In the present invention, the specific operation of the magnetron sputtering preferably includes the steps of:
The vacuum degree in the film plating chamber is lower than 5 multiplied by 10 -4 Pa, the argon flow is regulated, and the gas pressure in the film plating chamber is regulated to be 0.6-1.2 Pa. And turning on a bias power supply to be set to-40 to-200V. And (5) turning on a direct current power supply of the Cr target to sputter the target.
In the present invention, the rotation rate of the sample holder is preferably 1 to 5r/min, more preferably 2 to 4r/min, during the magnetron sputtering.
In the present invention, the thickness of the Cr interface toughening layer is preferably 0.5 to 4. Mu.m, more preferably 1 to 3. Mu.m.
After the Cr interface toughening layer is obtained, the TiAl alloy and the Ti 3 Al alloy are used as targets, the SiC fiber deposited with the Cr interface toughening layer is subjected to target magnetron sputtering under the argon condition, and the TiAl layer and the Ti 3 Al layer are alternately deposited on the surface of the SiC fiber deposited with the Cr interface toughening layer, so that the precursor wire with a multilayer structure is obtained. In the invention, the TiAl alloy target and the Ti 3 Al alloy target are respectively arranged at different target pairs.
In the present invention, the pair-target magnetron sputtering preferably includes:
During the deposition of the TiAl layer, the argon flow is preferably 50-100 sccm, more preferably 60-80 sccm; the gas pressure in the film plating chamber is preferably 0.6 to 1.2Pa, more preferably 0.8 to 1Pa; the power bias voltage is preferably-40 to-200V, more preferably-80 to-160V; the power supply current is preferably 1.6 to 2.4A, more preferably 1.8 to 2.0A; the power is preferably 700 to 800W, more preferably 750W; the deposition rate is preferably 2 to 4 μm/h, more preferably 3 μm/h;
In the process of depositing the Ti 3 Al layer, the flow rate of argon is preferably 50-100 sccm, more preferably 60-80 sccm; the gas pressure in the film plating chamber is preferably 0.6 to 1.2Pa, more preferably 0.8 to 1Pa; the power bias voltage is preferably-40 to-200V, more preferably-80 to-160V; the power supply current is preferably 1.6 to 2.4A, more preferably 1.8 to 2.0A; the power is preferably 700 to 1000W, more preferably 750 to 800W; the deposition rate is preferably 2 to 5. Mu.m/h, more preferably 3 to 4. Mu.m/h.
In the present invention, the specific operation of the target magnetron sputtering preferably includes the steps of:
And regulating the flow of argon to control the pressure of the gas in the film plating chamber to be 0.6-1.2 Pa. And turning on a bias power supply to be set to-40 to-200V. And simultaneously, switching on a direct current power supply of the TiAl target and a direct current power supply of the Ti 3 Al target to perform magnetron sputtering on the targets, and alternately depositing TiAl layers and Ti 3 Al layers on the surface of the SiC fiber by controlling the rotating speed of the sample holder, wherein the TiAl layers are in contact with the Cr interface toughening layer.
In the present invention, the rotation rate of the sample holder is preferably 1 to 5r/min, more preferably 2 to 4r/min, during the magnetron sputtering of the targets.
In the invention, the repetition period (n) of alternately depositing TiAl layers and Ti 3 Al layers is more than or equal to 4, preferably 4-6, based on TiAl+Ti 3 Al as one period.
In the present invention, the thickness of the single-layer TiAl layer is preferably 2 to 5. Mu.m, more preferably 3 to 4. Mu.m; the thickness of the single Ti 3 Al layer is preferably 2 to 5. Mu.m, more preferably 3 to 4. Mu.m.
In the precursor wire having a multilayer structure, the total thickness of the SiC fiber surface film layer is preferably 20 to 40 μm, more preferably 25 to 35 μm.
After the precursor wires with the multilayer structure are obtained, the precursor wires with the multilayer structure are uniformly distributed, and hot isostatic pressing is carried out to obtain the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material. In the present invention, the hot isostatic pressing is preferably vacuum hot isostatic pressing; the temperature of the hot isostatic pressing is preferably 950-980 ℃, more preferably 960 ℃; the pressure is preferably 120 to 150MPa, more preferably 130 to 140MPa; the time is preferably 2 to 3 hours.
In the present invention, the specific operation of hot isostatic pressing preferably comprises the steps of:
tightly and uniformly arranging precursor wires with a multilayer structure, and placing the precursor wires into a TiAl alloy sleeve for ion beam encapsulation to obtain a prefabricated sample;
and carrying out hot isostatic pressing on the prefabricated sample, and cooling the sample to room temperature along with a furnace after the hot isostatic pressing is finished.
In the invention, the main functions of the TiAl alloy sleeve are as follows: firstly, the function of supporting the precursor wire is achieved, and loosening is avoided; second, providing a base alloy; thirdly, providing a closed environment and packaging the precursor wire. In the invention, the ion beam encapsulation is mainly used for sealing the TiAl alloy sleeve and the precursor wire, preventing the precursor wire from leaking out of the sleeve and preventing external impurities such as gas, dust, moisture and the like from invading.
The preparation flow chart of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material is shown in figure 1.
The invention provides a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material prepared by the preparation method, which is prepared by carrying out hot isostatic pressing on a precursor wire with a multilayer structure, wherein the precursor wire with a single multilayer structure sequentially comprises SiC fibers, a carbon coating, a Cr interface toughening layer, and alternating TiAl layers and Ti 3 Al layers from inside to outside.
In the invention, the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material is recorded as SiC f/C/Cr/(TiAl/Ti3Al)n, wherein n represents a repetition period of alternately depositing TiAl layers and Ti 3 Al layers, and n is more than or equal to 4, preferably 4-6.
Firstly, depositing a layer of transition metal Cr serving as an interface toughening layer on the surface of a continuous SiC fiber with a carbon coating by a magnetron sputtering technology; alternately depositing TiAl and Ti 3 Al multilayer coatings on the Cr layer to serve as precursor wires; finally, the precursor wire arrangement is subjected to hot isostatic pressing to obtain the high-strength and high-toughness SiC f/C/Cr/(TiAl/Ti3Al)n composite material. According to the invention, the interface toughening layer introduced between the SiC fiber and the TiAl matrix remarkably improves the interface compatibility of the continuous SiC fiber and the TiAl matrix, and inhibits crack initiation at the interface; the alternately introduced Ti 3 Al toughening layers greatly toughen the TiAl matrix, so that the toughness of the matrix is improved, and brittle failure is prevented. Compared with the SiC f/C/TiAl composite material without the interface toughening layer and the SiC f/C/Cr/TiAl composite material without the Ti 3 Al toughening layer, the SiC f/C/Cr/(TiAl/Ti3Al)n composite material has obviously improved tensile strength at room temperature and high temperature, and can be used as a light-weight and high-strength composite material.
The invention provides application of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material as an aerospace material. In the present invention, the aerospace material preferably comprises one or more of an aerospace engine blade, a blade ring, and a structural component of a hypersonic aerocraft.
The high strength and toughness fiber reinforced TiAl/Ti 3 Al multi-layer composite material, the preparation method and the application thereof provided by the invention are described in detail below by combining examples, but are not to be construed as limiting the protection scope of the invention.
In the following examples, the C-coated continuous SiC fiber, tiAl alloy target, and Ti 3 Al alloy target were provided by beijing aerospace institute. The diameter of the continuous SiC fiber containing the C coating is 90-110 mu m; the thickness of the layer C is 2-4 mu m.
Example 1
The preparation method of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material comprises the following steps:
(1) Cleaning: after a Cr target, a TiAl target, a Ti 3 Al target and SiC fiber wires are placed at a designated position in a coating chamber of a multi-target magnetron sputtering system, a sample frame rotation switch is turned on until the vacuum degree in the coating chamber is lower than 5 multiplied by 10 -4 Pa, the rotation speed is 2r/min, argon is introduced, the flow is 60sccm, and the air pressure in the coating chamber is controlled at 0.8Pa. And (3) switching on an ion source power supply, regulating the voltage to about 200V, then regulating the argon flow to change the ion source voltage to 800V, cleaning for 30min, closing the ion source, and finishing cleaning.
(2) Preparing a Cr interface toughening layer: the target material is a pure Cr metal target, and the surface of the target material is clean and pollution-free. The vacuum degree in the film plating chamber is lower than 5 multiplied by 10 -4 Pa, the argon flow is regulated to 60sccm, and the gas pressure in the film plating chamber is regulated to 0.8Pa. The bias power was turned on and set at-80V. And (3) turning on a direct current power supply of the Cr target to perform target sputtering, wherein the power supply current is 1A, the power is 350W, the deposition rate is 1 mu m/h, and a Cr layer with the thickness of 2 mu m is deposited on the surface of the SiC fiber.
(3) Preparing a matrix (TiAl layer) and a matrix toughening layer (Ti 3 Al layer): the target materials are TiAl alloy target materials and Ti 3 Al alloy target materials, the two target materials are respectively arranged at different pairs of target positions, and the surface of the target material is clean and pollution-free. And regulating the flow of argon to 60sccm, and controlling the pressure of gas in the film plating chamber to be 0.8Pa. The bias power was turned on and set at-80V. Simultaneously, a direct current power supply of the TiAl target and a direct current power supply of the Ti 3 Al target are turned on to perform target sputtering, wherein in the process of TiAl layer deposition, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h; in the deposition process of the Ti 3 Al layer, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h. By controlling the rotation speed of the sample holder to be 2r/min, alternately depositing a TiAl layer with the thickness of 2 mu m and a Ti 3 Al layer with the thickness of 2 mu m on the surface of the SiC fiber, wherein the thickness ratio of the TiAl layer to the Ti 3 Al layer is 1:1, and alternately depositing 6 periods to obtain the precursor wire with a multilayer structure.
(4) Preparing a composite material: and (3) tightly and uniformly arranging the precursor wires, placing the precursor wires in a TiAl alloy sleeve for ion beam encapsulation, then carrying out vacuum hot isostatic pressing on the prefabricated sample at 960 ℃ and 150MPa for 2 hours, and forming, and cooling the sample along with a furnace to room temperature after the hot isostatic pressing is finished, thus obtaining the SiC f/C/Cr/(TiAl/Ti3Al)6 composite material.
Example 2
The preparation method of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material comprises the following steps:
(1) Cleaning: after a Cr target, a TiAl target, a Ti 3 Al target and SiC fiber wires are placed at a designated position in a coating chamber of a multi-target magnetron sputtering system, a sample frame rotation switch is turned on until the vacuum degree in the coating chamber is lower than 5 multiplied by 10 -4 Pa, the rotation speed is 2r/min, argon is introduced, the flow is 60sccm, and the air pressure in the coating chamber is controlled at 0.8Pa. And (3) switching on an ion source power supply, regulating the voltage to about 200V, then regulating the argon flow to change the ion source voltage to 800V, cleaning for 30min, closing the ion source, and finishing cleaning.
(2) Preparing a Cr interface toughening layer: the target material is a pure Cr metal target, and the surface of the target material is clean and pollution-free. The vacuum degree in the film plating chamber is lower than 5 multiplied by 10 -4 Pa, the argon flow is regulated to 60sccm, and the gas pressure in the film plating chamber is regulated to 0.8Pa. The bias power was turned on and set at-80V. And (3) turning on a direct current power supply of the Cr target to perform target sputtering, wherein the power supply current is 1A, the power is 350W, the deposition rate is 1 mu m/h, and a Cr layer with the thickness of 2 mu m is deposited on the surface of the SiC fiber.
(3) Preparing a matrix (TiAl layer) and a matrix toughening layer (Ti 3 Al layer): the target materials are TiAl alloy target materials and Ti 3 Al alloy target materials, the two target materials are respectively arranged at different pairs of target positions, and the surface of the target material is clean and pollution-free. And regulating the flow of argon to 60sccm, and controlling the pressure of gas in the film plating chamber to be 0.8Pa. The bias power was turned on and set at-80V. Simultaneously, a direct current power supply of the TiAl target and a direct current power supply of the Ti 3 Al target are turned on to perform target sputtering, wherein in the process of TiAl layer deposition, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h; in the deposition process of the Ti 3 Al layer, the power supply current is 2A, the power is 1000W, and the deposition rate is 5 mu m/h. By controlling the rotation speed of the sample holder to be 2r/min, alternately depositing a TiAl layer with the thickness of 2 mu m and a Ti 3 Al layer with the thickness of 4 mu m on the surface of the SiC fiber, wherein the thickness ratio of the TiAl layer to the Ti 3 Al layer is 1:2, and alternately depositing 4 periods to obtain the precursor wire with a multilayer structure.
(4) Preparing a composite material: and (3) tightly and uniformly arranging the precursor wires, placing the precursor wires in a TiAl alloy sleeve for ion beam encapsulation, then carrying out vacuum hot isostatic pressing on the prefabricated sample at 960 ℃ and 150MPa for 2 hours, and forming, and cooling the sample along with a furnace to room temperature after the hot isostatic pressing is finished, thus obtaining the SiC f/C/Cr/(TiAl/Ti3Al)4 composite material.
Example 3
The preparation method of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material comprises the following steps:
(1) Cleaning: after a Cr target, a TiAl target, a Ti 3 Al target and SiC fiber wires are placed at a designated position in a coating chamber of a multi-target magnetron sputtering system, a sample frame rotation switch is turned on until the vacuum degree in the coating chamber is lower than 5 multiplied by 10 -4 Pa, the rotation speed is 2r/min, argon is introduced, the flow is 60sccm, and the air pressure in the coating chamber is controlled at 0.8Pa. And (3) switching on an ion source power supply, regulating the voltage to about 200V, then regulating the argon flow to change the ion source voltage to 800V, cleaning for 30min, closing the ion source, and finishing cleaning.
(2) Preparing a Cr interface toughening layer: the target material is a pure Cr metal target, and the surface of the target material is clean and pollution-free. The vacuum degree in the film plating chamber is lower than 5 multiplied by 10 -4 Pa, the argon flow is regulated to 60sccm, and the gas pressure in the film plating chamber is regulated to 0.8Pa. The bias power was turned on and set at-80V. And (3) turning on a direct current power supply of the Cr target to perform target sputtering, wherein the power supply current is 1A, the power is 350W, the deposition rate is 1 mu m/h, and a Cr layer with the thickness of 2 mu m is deposited on the surface of the SiC fiber.
(3) Preparing a matrix (TiAl layer) and a matrix toughening layer (Ti 3 Al layer): the target materials are TiAl alloy target materials and Ti 3 Al alloy target materials, the two target materials are respectively arranged at different pairs of target positions, and the surface of the target material is clean and pollution-free. And regulating the flow of argon to 60sccm, and controlling the pressure of gas in the film plating chamber to be 0.8Pa. The bias power was turned on and set to-120V. Simultaneously, a direct current power supply of the TiAl target and a direct current power supply of the Ti 3 Al target are turned on to perform target sputtering, wherein in the process of TiAl layer deposition, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h; in the deposition process of the Ti 3 Al layer, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h. By controlling the rotation speed of the sample holder to be 2r/min, alternately depositing a TiAl layer with the thickness of 2 mu m and a Ti 3 Al layer with the thickness of 2 mu m on the surface of the SiC fiber, wherein the thickness ratio of the TiAl layer to the Ti 3 Al layer is 1:1, and alternately depositing 6 periods to obtain the precursor wire with a multilayer structure.
(4) Preparing a composite material: and (3) tightly and uniformly arranging the precursor wires, placing the precursor wires in a TiAl alloy sleeve for ion beam encapsulation, then carrying out vacuum hot isostatic pressing on the prefabricated sample at 960 ℃ and 150MPa for 2 hours, and forming, and cooling the sample along with a furnace to room temperature after the hot isostatic pressing is finished, thus obtaining the SiC f/C/Cr/(TiAl/Ti3Al)6 composite material.
Example 4
The preparation method of the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material comprises the following steps:
(1) Cleaning: after a Cr target, a TiAl target, a Ti 3 Al target and SiC fiber wires are placed at a designated position in a coating chamber of a multi-target magnetron sputtering system, a sample frame rotation switch is turned on until the vacuum degree in the coating chamber is lower than 5 multiplied by 10 -4 Pa, the rotation speed is 2r/min, argon is introduced, the flow is 60sccm, and the air pressure in the coating chamber is controlled at 0.8Pa. And (3) switching on an ion source power supply, regulating the voltage to about 200V, then regulating the argon flow to change the ion source voltage to 800V, cleaning for 30min, closing the ion source, and finishing cleaning.
(2) Preparing a Cr interface toughening layer: the target material is a pure Cr metal target, and the surface of the target material is clean and pollution-free. The vacuum degree in the film plating chamber is lower than 5 multiplied by 10 -4 Pa, the argon flow is regulated to 60sccm, and the gas pressure in the film plating chamber is regulated to 0.8Pa. The bias power was turned on and set at-80V. And (3) turning on a direct current power supply of the Cr target to perform target sputtering, wherein the power supply current is 1A, the power is 350W, the deposition rate is 1 mu m/h, and a Cr layer with the thickness of 2 mu m is deposited on the surface of the SiC fiber.
(3) Preparing a matrix (TiAl layer) and a matrix toughening layer (Ti 3 Al layer): the target materials are TiAl alloy target materials and Ti 3 Al alloy target materials, the two target materials are respectively arranged at different pairs of target positions, and the surface of the target material is clean and pollution-free. And regulating the flow of argon to 60sccm, and controlling the pressure of gas in the film plating chamber to be 0.8Pa. The bias power was turned on and set to-120V. Simultaneously, a direct current power supply of the TiAl target and a direct current power supply of the Ti 3 Al target are turned on to perform target sputtering, wherein in the process of TiAl layer deposition, the power supply current is 2A, the power is 750W, and the deposition rate is 3 mu m/h; in the deposition process of the Ti 3 Al layer, the power supply current is 2A, the power is 1000W, and the deposition rate is 5 mu m/h. By controlling the rotation speed of the sample holder to be 2r/min, alternately depositing a TiAl layer with the thickness of 2 mu m and a Ti 3 Al layer with the thickness of 4 mu m on the surface of the SiC fiber, wherein the thickness ratio of the TiAl layer to the Ti 3 Al layer is 1:2, and alternately depositing 4 periods to obtain the precursor wire with a multilayer structure.
(4) Preparing a composite material: and (3) tightly and uniformly arranging the precursor wires, placing the precursor wires in a TiAl alloy sleeve for ion beam encapsulation, then carrying out vacuum hot isostatic pressing on the prefabricated sample at 960 ℃ and 150MPa for 2 hours, and forming, and cooling the sample along with a furnace to room temperature after the hot isostatic pressing is finished, thus obtaining the SiC f/C/Cr/(TiAl/Ti3Al)4 composite material.
Comparative example 1
Compared with example 1, the deposition of Cr interface toughening layer and matrix toughening layer (Ti 3 Al layer) is not carried out, and a TiAl matrix of 20-24 mu m is directly deposited on the continuous SiC fiber with the C coating by adopting a PVD technology and is recorded as a SiC f/C/TiAl composite material.
Comparative example 2
Compared with the example 1, the deposition of the matrix toughening layer (Ti 3 Al layer) is not carried out, and the PVD technology is adopted to directly deposit an interface toughening layer Cr layer with the thickness of 2 mu m on the continuous SiC fiber with the C coating, and then a TiAl matrix with the thickness of 20-24 mu m is deposited, which is recorded as a SiC f/C/Cr/TiAl composite material.
Structural characterization
(1) The SEM pictures of the cross section of the precursor wire obtained in example 1 are shown in fig. 2, and fig. 2 (a) and (b) are pictures at different magnifications, respectively.
The SEM pictures of the cross section of the precursor wire obtained in comparative example 1 are shown in fig. 3, and fig. 3 (a) and (b) are pictures at different magnifications, respectively.
The SEM pictures of the cross section of the precursor wire obtained in comparative example 2 are shown in fig. 4, and (a) and (b) in fig. 4 are pictures at different magnifications, respectively.
As can be seen from fig. 2-4, the thickness of the overall SiC fiber surface coating is relatively uniform and the TiAl coating adheres well to the fiber surface. From (b) of fig. 2 to 4, it can be seen that both the comparative example and the example show typical columnar structures grown in the radial direction of SiC fibers, in which columnar cells in the fiber surface region corresponding to a small central angle are arranged approximately in parallel, and the width of the columnar cells slightly increases in the radial growth direction of the fibers. In addition, it is also apparent that the bonding between the multilayer structures in the examples was also very tight.
(2) The SEM pictures of the cross section of the composite material obtained in example 1 are shown in fig. 5, and fig. 5 (a) and (b) are pictures at different magnifications, respectively.
The SEM pictures of the cross section of the composite material obtained in comparative example 1 are shown in fig. 6, and (a) and (b) in fig. 6 are pictures at different magnifications, respectively.
The SEM pictures of the cross section of the composite material obtained in comparative example 2 are shown in fig. 7, and (a) and (b) in fig. 7 are pictures at different magnifications, respectively.
As can be seen from fig. 5 to 7, the SiC f/C/TiAl composite material without the interface modification layer has obvious reaction at the interface, forms an interface reaction region and initiates a large number of cracks and expands to the substrate; the Cr layer in the SiC f/C/Cr/TiAl composite material introduced with the interface modification layer has obvious toughening effect, slows down the crack growth to a certain extent, but still has cracks and has a wider interface reaction area; in the inverted SiC f/C/Cr/(TiAl/Ti3Al)6 composite material, the introduction of the interface modification layer and the matrix toughening layer enables the composite material to form a good multilayer structure, and the interface reaction and the crack expansion are effectively prevented.
Performance testing
The tensile strength of the composite materials obtained in example 1, comparative example 1 and comparative example 2 was tested with the standard GB/T228.2-2015.
The tensile strength versus graph of the composites obtained in example 1, comparative example 1, and comparative example 2 is shown in fig. 8, and the high temperature in fig. 8 is 800 ℃. As can be seen from fig. 8, the introduction of the interface modification layer and the matrix toughening layer can effectively improve the tensile strength of the composite material at room temperature and high temperature. The composite materials obtained in example 2, example 3 and example 4 perform similarly to the composite materials obtained in example 1.
From the above, the continuous SiC fiber reinforced TiAl/Ti 3 Al multilayer composite material provided by the invention obviously improves the bonding performance of the SiC fiber and the TiAl matrix, slows down the initiation and the expansion of cracks, and improves the performance of the composite material, so that the composite material has high room temperature and high temperature tensile strength.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A preparation method of a high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material comprises the following steps:
(1) Carrying out ion cleaning on the SiC fiber containing the carbon coating under the argon condition to obtain a pretreated SiC fiber;
(2) Performing magnetron sputtering on the pretreated SiC fiber under the argon condition by taking Cr as a target material to obtain the SiC fiber deposited with the Cr interface toughening layer;
(3) Performing magnetron sputtering on the SiC fiber deposited with the Cr interface toughening layer under the argon condition by taking TiAl alloy and Ti 3 Al alloy as target materials, and alternately depositing TiAl layers and Ti 3 Al layers on the surface of the SiC fiber deposited with the Cr interface toughening layer to obtain a precursor wire with a multilayer structure;
(4) And uniformly distributing the precursor wires with the multilayer structure, and performing hot isostatic pressing to obtain the high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material.
2. The method of claim 1, wherein the ion cleaning is performed in a magnetron sputtering system coating chamber; the argon flow is 50-70 sccm, the ion source voltage is 700-900V, and the cleaning time is 15-30 min.
3. The method according to claim 1, wherein the parameters of the magnetron sputtering in the step (2) include:
argon flow is 50-100 sccm;
The pressure of the gas in the film plating chamber is 0.6 Pa to 1.2Pa;
The power bias voltage is-40 to-200V;
the power supply current is 0.9-1.2A;
the power is 300-400W;
The deposition rate is 0.4-1.6 mu m/h.
4. A production method according to claim 1 or 3, wherein, in the SiC fiber containing the carbon coating layer, the diameter of the SiC fiber is 90 to 110 μm, and the thickness of the carbon coating layer is 2 to 4 μm;
The thickness of the Cr interface toughening layer is 0.5-4 mu m.
5. The method of claim 1, wherein the step (3) of magnetron sputtering the target comprises:
In the process of depositing the TiAl layer, the flow of argon is 50-100 sccm, the pressure of gas in a film plating chamber is 0.6-1.2 Pa, the power bias is-40 to-200V, the power current is 1.6-2.4A, the power is 700-800W, and the deposition rate is 2-4 mu m/h;
in the process of depositing the Ti 3 Al layer, the flow rate of argon is 50-100 sccm, the pressure of gas in a film plating chamber is 0.6-1.2 Pa, the power bias voltage is-40 to-200V, the power current is 1.6-2.4A, the power is 700-1000W, and the deposition rate is 2-5 mu m/h.
6. The method according to claim 1 or 5, wherein the repetition period of alternately depositing the TiAl layer and the Ti 3 Al layer is not less than 4 in terms of one period of tial+ti 3 Al;
the thickness of the single-layer TiAl layer is 2-5 mu m, and the thickness of the single-layer Ti 3 Al layer is 2-5 mu m.
7. The method according to claim 1, wherein the total thickness of the SiC fiber surface film layer in the precursor wire having the multilayer structure is 20 to 40 μm.
8. The method of claim 1, wherein the hot isostatic pressing is vacuum hot isostatic pressing; the temperature of the hot isostatic pressing is 950-980 ℃, the pressure is 120-180 MPa, and the time is 1-3 h.
9. The high-strength and high-toughness fiber reinforced TiAl/Ti 3 Al multilayer composite material prepared by the preparation method according to any one of claims 1-8, which is prepared by hot isostatic pressing of a precursor wire with a multilayer structure, wherein the precursor wire with a single multilayer structure sequentially comprises SiC fibers, a carbon coating, a Cr interface toughening layer, and alternating TiAl layers and Ti 3 Al layers from inside to outside.
10. The use of the high strength and toughness fiber reinforced TiAl/Ti 3 Al multilayer composite of claim 9 as an aerospace material.
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