CN118310671B - Temperature and pressure in-situ simultaneous measurement method applied to high-temperature environment - Google Patents
Temperature and pressure in-situ simultaneous measurement method applied to high-temperature environment Download PDFInfo
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- CN118310671B CN118310671B CN202410741952.2A CN202410741952A CN118310671B CN 118310671 B CN118310671 B CN 118310671B CN 202410741952 A CN202410741952 A CN 202410741952A CN 118310671 B CN118310671 B CN 118310671B
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- 238000011065 in-situ storage Methods 0.000 title claims abstract description 15
- 238000000691 measurement method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000009530 blood pressure measurement Methods 0.000 claims abstract description 10
- 238000009863 impact test Methods 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000001499 laser induced fluorescence spectroscopy Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000001225 nuclear magnetic resonance method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/025—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning with temperature compensating means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention aims to provide a temperature and pressure in-situ simultaneous measurement method applied to a high-temperature environment, which belongs to the technical field of semiconductors and comprises the steps of firstly determining the doping concentration of a sensor where a piezoresistor R 0 to be measured is located. And then measuring a resistance-temperature fitting curve A of the piezoresistor R 1 with the same doping concentration as the piezoresistor R 0 to be measured by using a high-low temperature impact test box. And then measuring the resistance value of the piezoresistor R 0 to be measured at normal temperature. And then, matching the resistance value of the piezoresistor R 0 to be detected at normal temperature with a resistance-temperature fitting curve A to obtain a resistance value and resistance-temperature fitting curve B of the piezoresistor R 0 to be detected of the packaged sensor. And finally, when the sensor corresponding to the piezoresistor R 0 to be tested is subjected to working pressure measurement, the measured resistance value is brought into a sensor resistance-temperature fitting curve B, and the working temperature corresponding to the sensor at the moment can be obtained. By the method, the working performance of the pressure sensor in a high-temperature environment can be improved, and the temperature and pressure co-location detection is more accurate.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a temperature and pressure in-situ simultaneous measurement method applied to a high-temperature environment.
Background
In recent years, with the progress of science such as vehicles, petrifaction, aerospace, military, etc., the application requirements of pressure sensors in high-temperature environments have been greatly increased. In the industrial field and the aerospace military field, the high-temperature-resistant pressure sensor is widely applied to pressure information acquisition, and the working performance of the high-temperature-resistant pressure sensor directly influences signal measurement. For example, in oil exploration and exploitation downhole oil pressure measurements, pressure sensors are required to operate in a high temperature environment of 220 ℃; in the automotive electronics field, pressure sensors are used for pressure measurement of engine throttles, the operating temperature of which can reach 350 ℃; in pressure vessel and pipeline pressure sensing applications in metallurgical chemical production, pressure sensors are required to operate at operating temperatures up to 480 ℃. It follows that the effect of temperature on the sensor is a factor that must be taken into account in pressure measurement.
However, high temperature environments can have a number of effects on sensor materials and electronic components. For example, piezoresistive pressure sensors increase their piezoresistance as temperature increases, thereby affecting the performance and accuracy of the sensor. In order to improve the accuracy and reliability of the sensor, it is often necessary to add an additional temperature sensor or thermistor. However, there are some drawbacks to adding additional temperature sensors. The response accuracy of the sensor is affected by environmental conditions, such as temperature gradient, electromagnetic interference, installation position and mode, and the temperature of the pressure sensor at a certain working point cannot be accurately measured, so that the accuracy of temperature measurement is limited to a certain extent.
Disclosure of Invention
In order to solve the problems, the invention provides a temperature and pressure in-situ simultaneous measurement method applied to a high-temperature environment, and aims to improve the temperature and pressure measurement accuracy and reliability of a sensor. The sensor has a simple structure, can measure the pressure and the temperature in a high-temperature environment, and does not need to add an additional temperature sensor. By adopting the method, the limitation brought by adding an additional temperature sensor in the prior art can be overcome, the working performance of the pressure sensor in a high-temperature environment is improved, the pressure is measured in the high-temperature environment, the temperature is detected at the same time, the real-time temperature feedback is realized, and the method can be used for the calculation of a subsequent compensation circuit, so that the temperature-pressure co-position detection is more accurate.
The invention adopts the following technical scheme:
In piezoresistive high temperature pressure sensors, the temperature coefficient of resistance of the same material at the same doping concentration should be the same in theory. However, in practical applications, there may be minor differences in temperature coefficients of resistance at the same material and the same doping concentration due to the effects of manufacturing processes, material purity, and other factors. These differences can cause the pressure sensor to be affected by temperature during pressure measurement, so that the sensitivity of the sensor and the stability of an output signal are changed, and the pressure of the pressure sensor at a certain working point cannot be accurately measured.
In order to measure the pressure more accurately in a high-temperature environment, the invention provides a temperature and pressure in-situ simultaneous measurement method applied to the high-temperature environment. The method can calculate the corresponding working temperature point under the condition of knowing a certain resistance value, thereby reducing the influence of temperature on the piezoresistor and realizing more accurate pressure measuring effect. By adopting the temperature-pressure in-situ simultaneous measurement method, the temperature can be fed back in real time and used for the calculation of a subsequent compensation circuit, so that higher accuracy of temperature-pressure in-situ detection is realized. The method can eliminate the influence of temperature on the performance of the pressure sensor, improve the measurement precision and reliability, and meet the requirement of pressure information acquisition in a high-temperature environment.
The temperature coefficients of resistance for the same doping concentration are the same, which means that the resistance-temperature curves for different resistors are exactly coincident at the same doping concentration. However, when considering practical process factors, the trend of the resistance-temperature curves for different resistances at the same doping concentration is similar, i.e. the slope of the resistance-temperature curves is the same but the intercept is different. It should be noted that the accuracy of this method is affected by the measurement and calibration of the sensor, so that reasonable measurement and adjustment are required in practical application to ensure the accuracy and reliability of the measurement result.
A temperature and pressure in-situ simultaneous measurement method applied to a high-temperature environment comprises the following steps:
Firstly, determining the doping concentration of a sensor where the piezoresistor R 0 to be detected is located;
Secondly, measuring the resistance of the piezoresistor R 1 with the same doping concentration as the piezoresistor R 0 to be measured at different temperatures by using a high-low temperature impact test box, calibrating the resistance and obtaining a resistance-temperature correspondence table to obtain a resistance-temperature fitting curve A;
Thirdly, measuring the resistance value of the piezoresistor R 0 to be measured at normal temperature;
Fourthly, matching the resistance value of the piezoresistor R 0 to be measured at normal temperature with a resistance-temperature fitting curve A to obtain a resistance value and resistance-temperature fitting curve B of the piezoresistor R 0 to be measured of the packaged sensor;
And fifthly, when the sensor corresponding to the piezoresistor R 0 to be tested is subjected to working pressure measurement, the measured resistance value is brought into a sensor resistance-temperature fitting curve B, and the working temperature corresponding to the sensor at the moment can be obtained.
Further, the determining the doping concentration of the sensor where the varistor R 0 to be measured is located in the first step may be the following method:
(1) Electron probe analysis: and (3) carrying out surface analysis on the sensor by using an electronic probe instrument to determine the type and concentration of the doping element.
(2) And (3) energy spectrum analysis: the sensor is analyzed by an energy spectrometer to determine the kind and concentration of the doping element.
(3) X-ray diffraction method: the sensor is analyzed by an X-ray diffractometer to determine the doping concentration.
(4) Nuclear magnetic resonance method: and analyzing the sensor by using a nuclear magnetic resonance analyzer to determine the type and concentration of the doping element.
(5) Photoelectron spectroscopy: the sensor is analyzed by an optoelectronic spectrometer to determine the species and concentration of the doping element.
(6) Laser induced fluorescence method: and analyzing the sensor by using a laser-induced fluorescence technology to determine the type and concentration of the doping element.
(7) Raman spectroscopy: the sensor is analyzed by a raman spectrometer to determine the species and concentration of the doping element.
Further, in the second step, the resistance of the piezoresistor R 1 at different temperatures is measured, and the forward and reverse stroke measurement needs to be averaged three times to reduce the error.
The beneficial effects of the invention are as follows:
According to the invention, an additional temperature sensor or a thermistor is not required, so that the pressure and the temperature change in a high-temperature environment can be simultaneously detected in real time, accurate temperature and pressure parameters are provided through data analysis and optimization, and the testing efficiency and accuracy are effectively improved. The method utilizes advanced sensor technology and data processing technology, works stably in a high-temperature environment, and has higher anti-interference capability and reliability. The high-temperature pressure sensor can help to detect and control pressure and temperature changes by measuring the pressure and the temperature in a high-temperature environment, realizes temperature in-situ compensation, and has important significance for industrial production and research and development. The pressure and the detection temperature are measured simultaneously in a high-temperature environment, and the temperature is fed back in real time and can be used for calculation of a subsequent compensation circuit, so that the temperature, pressure and position detection is more accurate.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 shows the resistance of the varistor R 1-R4 with temperature change at the same doping concentration;
FIG. 3 is a graph showing the temperature dependence of the normalized varistor R 1-R4 at the same doping concentration;
FIG. 4 is a graph of resistance versus temperature for varistor R 1;
Fig. 5 shows a resistance-temperature curve B of the varistor R 0 to be measured.
Detailed Description
As shown in fig. 1, to measure the temperature value of the piezoresistor R 0 under a certain operating point of the packaged sensor, the doping concentration of the sensor where the piezoresistor R 0 is located is first determined. And then measuring a resistance-temperature fitting curve A of the piezoresistor R 1 with the same doping concentration as the piezoresistor R 0 to be measured by using a high-low temperature impact test box. And then measuring the resistance value of the piezoresistor R 0 to be measured at normal temperature. And then, matching the resistance value of the piezoresistor R 0 to be detected at normal temperature with a resistance-temperature fitting curve A to obtain a resistance value and resistance-temperature fitting curve B of the piezoresistor R 0 to be detected of the packaged sensor. And finally, when the sensor corresponding to the piezoresistor R 0 to be tested is subjected to working pressure measurement, the measured resistance value is brought into a sensor resistance-temperature fitting curve B, and the working temperature corresponding to the sensor at the moment can be obtained.
Examples
Firstly, determining that the doping concentration of a piezoresistor R 0 to be measured of a packaged sensor is 2.1 multiplied by 10 19cm-3, then measuring the resistance value of the temperature from minus 40 ℃ to 160 ℃ by using a piezoresistor R 1 with the doping concentration of 2.1 multiplied by 10 19cm-3, measuring one group of data at intervals of 10 ℃, respectively testing forward and backward strokes three times, and averaging to obtain the voltage-sensitive resistor shown in the table 1.
TABLE 1 resistance of R 1 to temperature after averaging
Bringing the above data into origin yields FIG. 4: the resistance-temperature fitting curve A of the piezoresistor R 1 with the doping concentration of 2.1 multiplied by 10 19cm-3 is as follows: y=5.26799+0.00371x+1.1232×10 -5X2, wherein Y is a resistance value, kΩ; x is temperature, DEG C.
And then measuring the resistance value 5.29864kΩ of the piezoresistor R 0 to be measured at the normal temperature of 20 ℃ and the resistance value 5.34139kΩ of the piezoresistor R 1 at the normal temperature of 20 ℃ to be different from 0.04275kΩ. Then, the resistance value of the piezoresistor R 0 to be tested at normal temperature is matched with a resistance-temperature fitting curve A to obtain a graph of FIG. 5: the equation of the resistance value and resistance-temperature fitting curve B of the piezoresistor R 0 to be measured of the packaged sensor is as follows: y=5.22524+0.00371x+1.1232×10 -5X2, where Y is a resistance value, kΩ; x is temperature, DEG C.
And finally, when the sensor corresponding to the piezoresistor R 0 to be tested is subjected to working pressure measurement, the measured resistance value is brought into a sensor resistance-temperature fitting curve B, and the working temperature corresponding to the sensor at the moment can be obtained.
Fig. 2 shows the resistance values of the piezoresistor R 1-R4 along with the temperature change obtained by averaging three forward and reverse strokes, and as can be seen from fig. 3, the change trends of the piezoresistor R 1-R4 after normalization are almost consistent, and the change trends of the piezoresistor R 1-R4 can be considered to be completely consistent by taking instrument errors and measurement errors into consideration, so that the slope of the piezoresistor R 1-R4 is the same and only the intercept is different. That is, knowing one resistance-temperature curve and equation, another resistance-temperature curve and equation at the same doping concentration can be obtained.
As shown in fig. 4, the resistance-temperature curve a of the varistor R 1 can be obtained by obtaining the resistance value of the varistor R 0 to be measured at normal temperature of the varistor R 0 to be measured, and the corresponding temperature value can be deduced from the resistance value of a certain working point of the varistor R 0 to be measured, so as to perform in-situ compensation.
Claims (4)
1. A temperature and pressure in-situ simultaneous measurement method applied to a high-temperature environment is characterized by comprising the following steps of: the method comprises the following steps:
Firstly, determining the doping concentration of a sensor where the piezoresistor R 0 to be detected is located;
Secondly, measuring the resistance of the piezoresistor R 1 with the same doping concentration as the piezoresistor R 0 to be measured at different temperatures by using a high-low temperature impact test box, calibrating the resistance and obtaining a resistance-temperature correspondence table to obtain a resistance-temperature fitting curve A;
Thirdly, measuring the resistance value of the piezoresistor R 0 to be measured at normal temperature;
Fourthly, matching the resistance value of the piezoresistor R 0 to be measured at normal temperature with a resistance-temperature fitting curve A to obtain a resistance value and resistance-temperature fitting curve B of the piezoresistor R 0 to be measured of the packaged sensor;
And fifthly, when the sensor corresponding to the piezoresistor R 0 to be tested is subjected to working pressure measurement, the measured resistance value is brought into a sensor resistance-temperature fitting curve B, and the working temperature corresponding to the sensor at the moment can be obtained.
2. The method for simultaneous measurement of temperature and pressure in situ applied to high-temperature environment according to claim 1, wherein the method comprises the following steps: in the second step, the resistance of the piezoresistor R 1 at different temperatures is measured, and the forward and reverse travel measurement needs to be averaged three times to reduce the error.
3. The method for simultaneous measurement of temperature and pressure in situ applied to high-temperature environment according to claim 1, wherein the method comprises the following steps: the fitting equation of the resistance-temperature fitting curve A is as follows: y=5.26799+0.00371x+1.1232×10 -5X2, wherein Y is a resistance value, kΩ; x is temperature, DEG C.
4. The method for simultaneous measurement of temperature and pressure in situ applied to high-temperature environment according to claim 1, wherein the method comprises the following steps: the fitting equation for the resistance-temperature fitting curve B is: y=5.22524+0.00371x+1.1232×10 -5X2, where Y is a resistance value, kΩ; x is temperature, DEG C.
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| CN102969225A (en) * | 2011-08-31 | 2013-03-13 | 英飞凌科技股份有限公司 | Halbleiterbauelement mit einer amorphen halb-isolierenden schicht, temperatursensor und verfahren zur herstellung eines halbleiterbauelements |
| CN104535222A (en) * | 2015-01-22 | 2015-04-22 | 哈尔滨工业大学 | High-sensitivity temperature measurement method based on light emission characteristics of trivalent praseodymium ions |
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| US9515243B2 (en) * | 2014-12-22 | 2016-12-06 | Infineon Technologies Ag | Temperature sensor |
| CN104697701A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Piezoresistive pressure sensor |
| CN104925734B (en) * | 2015-04-13 | 2016-08-03 | 中北大学 | A kind of near field heat radiation efficient heat transfer is without powder charge MEMS ignition chip and preparation method thereof |
| CN107957299B (en) * | 2017-11-27 | 2019-12-27 | 电子科技大学 | Silicon carbide linear temperature sensor and temperature measuring method and manufacturing method thereof |
| DE102019135495B3 (en) * | 2019-12-20 | 2021-05-12 | Infineon Technologies Ag | SEMI-CONDUCTOR ARRANGEMENT WITH INTEGRATED TEMPERATURE SENSOR AND PROCESS FOR ITS MANUFACTURING AND APPLICATION |
| CN111211221B (en) * | 2020-01-07 | 2021-12-07 | 同济大学 | High-stability low-power-consumption Hf-Ge-Sb nano phase change film and preparation method and application thereof |
| CN114004038A (en) * | 2021-09-15 | 2022-02-01 | 北京遥测技术研究所 | Piezoresistive pressure sensor design method considering temperature influence |
| CN117782351A (en) * | 2023-12-27 | 2024-03-29 | 深圳大学 | Optical temperature measurement system and application method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102969225A (en) * | 2011-08-31 | 2013-03-13 | 英飞凌科技股份有限公司 | Halbleiterbauelement mit einer amorphen halb-isolierenden schicht, temperatursensor und verfahren zur herstellung eines halbleiterbauelements |
| CN104535222A (en) * | 2015-01-22 | 2015-04-22 | 哈尔滨工业大学 | High-sensitivity temperature measurement method based on light emission characteristics of trivalent praseodymium ions |
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