CN117810223B - Polysilicon resistor circuit, preparation method and audio frequency differential circuit - Google Patents
Polysilicon resistor circuit, preparation method and audio frequency differential circuit Download PDFInfo
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- CN117810223B CN117810223B CN202410226252.XA CN202410226252A CN117810223B CN 117810223 B CN117810223 B CN 117810223B CN 202410226252 A CN202410226252 A CN 202410226252A CN 117810223 B CN117810223 B CN 117810223B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 385
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 372
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000002184 metal Substances 0.000 claims description 59
- 238000002161 passivation Methods 0.000 claims description 42
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- 238000010329 laser etching Methods 0.000 description 6
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- 239000003990 capacitor Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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Abstract
The invention relates to the technical field of audio signal processing, and provides a polysilicon resistor circuit, a preparation method and an audio differential circuit, wherein the polysilicon resistor circuit comprises: the first resistor branch comprises a first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with the total input end and a first output connecting wire for connecting the first polysilicon resistor with the total output end; a second resistor branch including a potential adjustment circuit; the potential adjusting circuit is connected with the substrate of the first polysilicon resistor and is configured to adjust the substrate potential of the first polysilicon resistor to be an intermediate potential between the total input end and the total output end. According to the invention, the substrate potential of the polysilicon resistor is adjusted to be the intermediate potential between the total input end and the total output end by designing the potential adjusting circuit, so that the polysilicon resistor is ensured to have fixed substrate voltage and stable resistance value, the linear output of the audio frequency differential circuit is further maintained, and the THD index is improved.
Description
Technical Field
The invention relates to the technical field of audio signal processing, in particular to a polysilicon resistor circuit, a preparation method and an audio differential circuit.
Background
In the field of audio signal processing, the processed audio signal is subject to distortion during the amplification or reduction process, which can lead to harmonic mixing or loss of components of the audio signal during transmission. The use of the polycrystalline resistor in the audio circuit is very common, the polycrystalline resistor has obvious piezoelectric effect, and when voltages at two ends of the resistor are inconsistent, the resistance value can change slightly so as to influence the order of magnitude of THD. China is the largest consumer electronic market and production base worldwide, and the requirement of a high-fidelity audio power amplifier is increasingly multiplied, so how to improve the THD of an audio circuit is important.
Currently, there are roughly two conventional ways to optimize THD of an audio op-amp: one is from the structure and performance optimization of the operational amplifier, greatly increase the gain and bandwidth of the operational amplifier and weaken the influence of feedback small signals on the operational amplifier, or adopt a differential circuit architecture to reduce the energy of the output higher even harmonic, but the method has certain limit and the optimization effect has a certain relation with the process of the circuit. The other is laser etching, when the circuit layout is made, the resistance value of the resistor is changed by performing laser etching on the layer where the resistor is positioned so as to reduce circuit mismatch and offset to increase the linearity of output, and the method has a certain effect on the optimization of THD, but has more complicated operation, uncertainty and higher cost in mass production. The method can improve the THD of the audio circuit, but on the basis, a method for improving the THD of the audio circuit, which is simple and visual to operate and obvious in effect, is needed.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a polysilicon resistor circuit, a preparation method and an audio frequency differential circuit, and aims to solve the problems of low linearity and poor THD index of the audio frequency differential circuit in the prior art.
The invention provides a polysilicon resistor circuit, comprising:
the first resistor branch comprises a first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end;
The second resistor branch comprises a potential adjusting circuit;
The potential adjustment circuit is connected with the substrate of the first polysilicon resistor and is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end.
Optionally, the potential adjusting circuit specifically includes:
The device comprises a polysilicon resistor series structure, a second input connecting wire for connecting the polysilicon resistor series structure with a main input end, a second output connecting wire for connecting the polysilicon resistor series structure with a main output end, and an intermediate potential lead-out connecting wire for connecting the polysilicon resistor series structure with a first polysilicon resistor substrate;
The polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal according to the intermediate potential lead-out connection line.
Optionally, the polysilicon resistor series structure specifically includes:
The second polysilicon resistor, the third polysilicon resistor and the series connection line connecting the second polysilicon resistor and the third polysilicon resistor;
The second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
Optionally, the first polysilicon resistor, the second polysilicon resistor, and the third polysilicon resistor include:
A substrate;
Sequentially laminating an epitaxial layer, an oxide layer and polysilicon which are arranged on the substrate, and a passivation layer which is arranged on the oxide layer and covers the polysilicon;
The passivation layer is provided with a pair of metal contact holes, and the metal contact holes comprise a first metal contact hole connected with the second input connecting wire or the second output connecting wire and a second metal contact hole connected with the series connecting wire.
Optionally, the polysilicon resistor series structure is configured to be formed by connecting a second polysilicon resistor and a third polysilicon resistor independently;
The second polysilicon resistor and the third polysilicon resistor are provided with independent substrates, epitaxial layers, oxide layers and passivation layers;
The second polysilicon resistor and the third polysilicon resistor are connected only through the series connection line.
Optionally, the polysilicon resistor series structure is configured to be formed by connecting a combined second polysilicon resistor and third polysilicon resistor;
Wherein the second polysilicon resistor and the third polysilicon resistor have a common substrate, epitaxial layer, oxide layer and passivation layer;
the polysilicon of the first polysilicon resistor and the polysilicon of the second polysilicon resistor are arranged on a shared oxide layer and covered by a shared passivation layer, and each pair of metal contact holes is arranged on the passivation layer on one polysilicon.
In a second aspect of the present invention, a method for manufacturing a polysilicon resistor circuit is provided, including:
preparing a first polysilicon resistor;
constructing a first resistor branch comprising the first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end;
Preparing a potential adjusting circuit;
Constructing a second resistance branch comprising the potential adjustment circuit;
The potential adjustment circuit is connected to the substrate of the first polysilicon resistor to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal.
Optionally, the preparation potential adjusting circuit specifically includes:
Preparing a polysilicon resistor series structure;
constructing a potential adjusting circuit comprising the polysilicon resistor serial structure, a second input connecting wire for connecting the polysilicon resistor serial structure with a total input end, a second output connecting wire for connecting the polysilicon resistor serial structure with a total output end and an intermediate potential leading-out connecting wire for connecting the polysilicon resistor serial structure with a first polysilicon resistor substrate;
The polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal according to the intermediate potential lead-out connection line.
Optionally, the preparing a polysilicon resistor series structure specifically includes:
preparing a second polysilicon resistor and a third polysilicon resistor;
constructing a polysilicon resistor series structure comprising the second polysilicon resistor, the third polysilicon resistor and a series connection line connecting the second polysilicon resistor and the third polysilicon resistor;
The second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
Optionally, preparing the first polysilicon resistor, preparing the second polysilicon resistor and preparing the third polysilicon resistor specifically includes:
Providing a substrate;
sequentially laminating an epitaxial layer, an oxide layer and polysilicon on the substrate, and forming a passivation layer covering the polysilicon on the oxide layer;
Forming a pair of metal contact holes on the passivation layer; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
Optionally, preparing the second polysilicon resistor and preparing the third polysilicon resistor specifically includes:
Providing two separate substrates;
Forming an epitaxial layer, an oxide layer, polysilicon on the two independent substrates respectively, and forming a passivation layer covering each polysilicon on the oxide layer;
Forming a pair of metal contact holes on each passivation layer respectively; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
Optionally, preparing the second polysilicon resistor and preparing the third polysilicon resistor specifically includes:
Providing a common substrate;
Forming a common epitaxial layer, a common oxide layer, polysilicon of the second polysilicon resistor and the third polysilicon resistor on the common substrate, and forming a common passivation layer respectively covering each polysilicon on the common oxide layer;
Forming a pair of metal contact holes on the common passivation layer on each polysilicon; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
In a third aspect of the present invention, there is provided an audio differential circuit comprising:
An audio operational amplifier; and
The polysilicon resistor circuit is arranged between the inverting input end, the non-inverting input end, the output end or the non-inverting input end of the audio operational amplifier and the reference voltage input end or the grounding end.
The invention has the beneficial effects that: the utility model provides a polycrystalline silicon resistance circuit, preparation method and audio frequency difference circuit, this polycrystalline silicon resistance circuit includes: the first resistor branch comprises a first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end; the second resistor branch comprises a potential adjusting circuit; the potential adjustment circuit is connected with the substrate of the first polysilicon resistor and is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end. According to the invention, the substrate potential of the polysilicon resistor is adjusted to be the intermediate potential between the total input end and the total output end by designing the potential adjusting circuit, so that the polysilicon resistor is ensured to have fixed substrate voltage and stable resistance value, the linear output of the audio frequency differential circuit is further maintained, and the THD index is improved.
Drawings
FIG. 1 is a schematic diagram of a conventional polysilicon resistor;
FIG. 2 is a schematic diagram of a conventional audio differential circuit;
FIG. 3 is a schematic diagram of a polysilicon resistor circuit according to the present invention;
FIG. 4 is a schematic flow chart of a method for manufacturing a polysilicon resistor circuit according to the present invention;
FIG. 5 is a schematic diagram of an audio differential circuit with an inversion mode according to the present invention;
FIG. 6 is a schematic diagram of a normal phase mode audio differential circuit according to the present invention;
Fig. 7 is a schematic diagram of an audio differential circuit in a fully differential mode according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
The embodiment of the invention provides a polysilicon resistor circuit. In this embodiment, a polysilicon resistor circuit includes: the first resistor branch comprises a first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end; the second resistor branch comprises a potential adjusting circuit; the potential adjustment circuit is connected with the substrate of the first polysilicon resistor and is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end.
It should be noted that at present, there are two general ways to optimize THD of an audio op-amp: one is from the structure and performance optimization of the operational amplifier, greatly increase the gain and bandwidth of the operational amplifier and weaken the influence of feedback small signals on the operational amplifier, or adopt a differential circuit architecture to reduce the energy of the output higher even harmonic, but the method has certain limit and the optimization effect has a certain relation with the process of the circuit. The other is laser etching, when the circuit layout is made, the resistance value of the resistor is changed by performing laser etching on the layer where the resistor is positioned so as to reduce circuit mismatch and offset to increase the linearity of output, and the method has a certain effect on the optimization of THD, but has more complicated operation, uncertainty and higher cost in mass production.
In order to solve the above-mentioned problem, the present embodiment considers that the audio differential circuit is constructed by using the polysilicon resistor with higher stability, stronger anti-interference capability and better voltage resistance, however, since the existing polysilicon resistor has the resistance value of the polysilicon resistor changing along with the change of the substrate voltage, the circuit gain of the audio differential circuit including the polysilicon resistor is unstable, which affects the linearity of the output signal, and causes the deterioration of the THD index. Specifically, as shown in fig. 1, when a voltage is applied to the metal contact hole and a current flows through the resistor, the polysilicon strip is doped with the substrate to form a polar plate, and the oxide layer is used as a medium to form a capacitor. The charges are distributed in a trapezoid along the current trend in the area close to the oxide layer, more charges are accumulated in the high potential area, and less charges are accumulated in the low potential area, so that the resistance value of the actual polycrystalline resistor is changed along with the change of the substrate voltage. At this time, assuming that the voltage difference between the substrate voltage and the polysilicon is V Δ, and a substrate voltage coefficient Cs is fitted, the resistance after considering the substrate influence is R b, and the resistance value is R, so that it is possible to obtain:
the voltage on the polysilicon is approximately equal to the average of the voltages across the polysilicon resistor, i.e.:
。
as shown in fig. 2, the above-mentioned polysilicon resistor can be obtained in an inverting input mode of the audio differential circuit, that is, vip=vref=0v:
Vx+=Vx-=0V
At this time gain g= //>Meanwhile, the substrate potential in the design is consistent, and the method can be as follows:
It can be seen that the gain (absolute value) becomes large as the input signal becomes large. The result at this time can be seen that the circuit gain changes and further influence the linearity of the output signal, so that the output waveform is distorted, the distortion appears as harmonic waves in the output frequency spectrum, and the more serious the distortion, the higher the harmonic energy is, and the THD index is deteriorated.
In order to solve the problem of stability of the resistance value of the polysilicon resistor, the embodiment improves the structure of the polysilicon resistor circuit, adjusts the substrate potential of the polysilicon resistor to be the intermediate potential between the total input end and the total output end by designing the potential adjusting circuit, thereby ensuring that the substrate voltage of the polysilicon resistor is kept stable, ensuring that the polysilicon resistor has a fixed substrate voltage and provides a stable resistance value, ensuring that the polysilicon resistor does not have instability along with the change of the substrate voltage, further maintaining the linear output of the audio frequency differential circuit, and improving the THD index.
In a preferred embodiment, the potential adjustment circuit specifically includes: the device comprises a polysilicon resistor series structure, a second input connecting wire for connecting the polysilicon resistor series structure with a main input end, a second output connecting wire for connecting the polysilicon resistor series structure with a main output end, and an intermediate potential lead-out connecting wire for connecting the polysilicon resistor series structure with a first polysilicon resistor substrate; the polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal according to the intermediate potential lead-out connection line.
Wherein, the polycrystalline silicon resistor series structure specifically includes: the second polysilicon resistor, the third polysilicon resistor and the series connection line connecting the second polysilicon resistor and the third polysilicon resistor; the second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
In the present embodiment, in the circuit design process of adjusting the substrate potential of the polysilicon resistor to the intermediate potential between the total input terminal and the total output terminal by the potential adjustment circuit, the gain g=is analyzed by//>The expression of (3) found that if the expression of (1) is satisfied at the same time=/>/2，/>=/>According to/2, the gain is always-1 and is kept unchanged, and based on this, when the substrate potential of the first polysilicon resistor is adjusted by the design potential adjusting circuit, it is considered that the substrate potentials of the polysilicon resistors arranged in the audio frequency differential circuit are respectively adjusted to be/>2 And/>And/2, thereby making the gain G=/>//>The result of (2) is always kept at-1, and finally the linear output of the audio frequency differential circuit is kept, so that the THD index is improved. Further, as shown in FIG. 3, to achieve this will/>Stabilized at/>At the same time of/2, will/>Stabilized at/>According to the embodiment, the polycrystalline silicon resistor series structure connected between the total input end and the total output end is arranged, the polycrystalline silicon resistor series structure is used for obtaining the intermediate potential between the total input end and the total output end, and the intermediate potential is led out to the substrate of the first polycrystalline silicon resistor by the intermediate potential leading-out connecting wire, so that the substrate potential of the first polycrystalline silicon resistor always keeps the intermediate potential between the total input end and the total output end, and further, the gain of the audio frequency differential circuit constructed by the first polycrystalline silicon resistor is ensured to be stable and the linearity of an output signal is not influenced, and therefore, the THD index is good.
In a preferred embodiment, the first polysilicon resistor, the second polysilicon resistor, and the third polysilicon resistor comprise: a substrate; sequentially laminating an epitaxial layer, an oxide layer and polysilicon which are arranged on the substrate, and a passivation layer which is arranged on the oxide layer and covers the polysilicon; the passivation layer is provided with a pair of metal contact holes, and the metal contact holes comprise a first metal contact hole connected with the second input connecting wire or the second output connecting wire and a second metal contact hole connected with the series connecting wire.
In one embodiment, the polysilicon resistor series structure is configured to be formed by connecting a second polysilicon resistor and a third polysilicon resistor independently; the second polysilicon resistor and the third polysilicon resistor are provided with independent substrates, epitaxial layers, oxide layers and passivation layers; the second polysilicon resistor and the third polysilicon resistor are connected only through the series connection line.
In another embodiment, the polysilicon resistor series structure is configured to be formed by combining a second polysilicon resistor and a third polysilicon resistor; wherein the second polysilicon resistor and the third polysilicon resistor have a common substrate, epitaxial layer, oxide layer and passivation layer; the polysilicon of the first polysilicon resistor and the polysilicon of the second polysilicon resistor are arranged on a shared oxide layer and covered by a shared passivation layer, and each pair of metal contact holes is arranged on the passivation layer on one polysilicon.
In this embodiment, for the design of the polysilicon resistor series structure, the second polysilicon resistor and the third polysilicon resistor may be respectively constructed by using an independent substrate, an epitaxial layer, an oxide layer and a passivation layer, or the second polysilicon resistor and the third polysilicon resistor may be constructed by using a common substrate, an epitaxial layer, an oxide layer and a passivation layer. When the second polysilicon resistor and the third polysilicon resistor are independently constructed, the second polysilicon resistor and the third polysilicon resistor are connected through the metal contact hole and the serial connection line between the second polysilicon resistor and the third polysilicon resistor, and the mode has higher flexibility in selecting and using the polysilicon resistor; when the second polysilicon resistor and the third polysilicon resistor are combined and built, the second polysilicon resistor and the third polysilicon resistor are connected by adopting a metal contact hole and a series connection wire between the metal contact hole and the third polysilicon resistor, and also have a shared substrate, an epitaxial layer, an oxide layer and a passivation layer, so that the mode has higher preparation efficiency; thus, various alternative embodiments are provided for the polysilicon resistor series structure.
Example 2:
Referring to fig. 4, fig. 4 is a schematic flow chart of a method for manufacturing a polysilicon resistor circuit according to an embodiment of the invention.
As shown in fig. 4, a method for preparing a polysilicon resistor circuit includes:
Step S1: preparing a first polysilicon resistor;
Step S2: constructing a first resistor branch comprising the first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end;
Step S3: preparing a potential adjusting circuit;
step S4: constructing a second resistance branch comprising the potential adjustment circuit;
step S5: the potential adjustment circuit is connected to the substrate of the first polysilicon resistor to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal.
It should be noted that at present, there are two general ways to optimize THD of an audio op-amp: one is from the structure and performance optimization of the operational amplifier, greatly increase the gain and bandwidth of the operational amplifier and weaken the influence of feedback small signals on the operational amplifier, or adopt a differential circuit architecture to reduce the energy of the output higher even harmonic, but the method has certain limit and the optimization effect has a certain relation with the process of the circuit. The other is laser etching, when the circuit layout is made, the resistance value of the resistor is changed by performing laser etching on the layer where the resistor is positioned so as to reduce circuit mismatch and offset to increase the linearity of output, and the method has a certain effect on the optimization of THD, but has more complicated operation, uncertainty and higher cost in mass production.
In order to solve the above-mentioned problem, the present embodiment considers that the audio differential circuit is constructed by using the polysilicon resistor with higher stability, stronger anti-interference capability and better voltage resistance, however, since the existing polysilicon resistor has the resistance value of the polysilicon resistor changing along with the change of the substrate voltage, the circuit gain of the audio differential circuit including the polysilicon resistor is unstable, which affects the linearity of the output signal, and causes the deterioration of the THD index. Specifically, as shown in fig. 1, when a voltage is applied to the metal contact hole and a current flows through the resistor, the polysilicon strip is doped with the substrate to form a polar plate, and the oxide layer is used as a medium to form a capacitor. The charges are distributed in a trapezoid along the current trend in the area close to the oxide layer, more charges are accumulated in the high potential area, and less charges are accumulated in the low potential area, so that the resistance value of the actual polycrystalline resistor is changed along with the change of the substrate voltage. At this time, assuming that the voltage difference between the substrate voltage and the polysilicon is V Δ, and a substrate voltage coefficient Cs is fitted, the resistance after considering the substrate influence is R b, and the resistance value is R, so that it is possible to obtain:
the voltage on the polysilicon is approximately equal to the average of the voltages across the polysilicon resistor, i.e.:
。
as shown in fig. 2, the above-mentioned polysilicon resistor can be obtained in an inverting input mode of the audio differential circuit, that is, vip=vref=0v:
Vx+=Vx-=0V
At this time gain g= //>Meanwhile, the substrate potential in the design is consistent, and the method can be as follows:
It can be seen that the gain (absolute value) becomes large as the input signal becomes large. The result at this time can be seen that the circuit gain changes and further influence the linearity of the output signal, so that the output waveform is distorted, the distortion appears as harmonic waves in the output frequency spectrum, and the more serious the distortion, the higher the harmonic energy is, and the THD index is deteriorated.
In order to solve the problem of stability of the resistance value of the polysilicon resistor, the embodiment improves the structure of the polysilicon resistor circuit, adjusts the substrate potential of the polysilicon resistor to be the intermediate potential between the total input end and the total output end by designing the potential adjusting circuit, thereby ensuring that the substrate voltage of the polysilicon resistor is kept stable, ensuring that the polysilicon resistor has a fixed substrate voltage and provides a stable resistance value, ensuring that the polysilicon resistor does not have instability along with the change of the substrate voltage, further maintaining the linear output of the audio frequency differential circuit, and improving the THD index.
In a preferred embodiment, a potential adjustment circuit is prepared, specifically comprising:
Step S31: preparing a polysilicon resistor series structure;
Step S32: constructing a potential adjusting circuit comprising the polysilicon resistor serial structure, a second input connecting wire for connecting the polysilicon resistor serial structure with a total input end, a second output connecting wire for connecting the polysilicon resistor serial structure with a total output end and an intermediate potential leading-out connecting wire for connecting the polysilicon resistor serial structure with a first polysilicon resistor substrate;
The polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal according to the intermediate potential lead-out connection line.
In a preferred embodiment, the preparing a polysilicon resistor series structure specifically includes:
step S311: preparing a second polysilicon resistor and a third polysilicon resistor;
Step S312: constructing a polysilicon resistor series structure comprising the second polysilicon resistor, the third polysilicon resistor and a series connection line connecting the second polysilicon resistor and the third polysilicon resistor;
The second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
In the present embodiment, in the circuit design process of adjusting the substrate potential of the polysilicon resistor to the intermediate potential between the total input terminal and the total output terminal by the potential adjustment circuit, the gain g=is analyzed by//>The expression of (3) found that if the expression of (1) is satisfied at the same time=/>/2，/>=/>According to/2, the gain is always-1 and is kept unchanged, and based on this, when the substrate potential of the first polysilicon resistor is adjusted by the design potential adjusting circuit, it is considered that the substrate potentials of the polysilicon resistors arranged in the audio frequency differential circuit are respectively adjusted to be/>2 And/>And/2, thereby making the gain G=/>//>The result of (2) is always kept at-1, and finally the linear output of the audio frequency differential circuit is kept, so that the THD index is improved. Further, as shown in FIG. 3, to achieve this will/>Stabilized at/>At the same time of/2, will/>Stabilized at/>According to the embodiment, the polycrystalline silicon resistor series structure connected between the total input end and the total output end is arranged, the polycrystalline silicon resistor series structure is used for obtaining the intermediate potential between the total input end and the total output end, and the intermediate potential is led out to the substrate of the first polycrystalline silicon resistor by the intermediate potential leading-out connecting wire, so that the substrate potential of the first polycrystalline silicon resistor always keeps the intermediate potential between the total input end and the total output end, and further, the gain of the audio frequency differential circuit constructed by the first polycrystalline silicon resistor is ensured to be stable and the linearity of an output signal is not influenced, and therefore, the THD index is good.
In a preferred embodiment, the preparing of the first polysilicon resistor, the preparing of the second polysilicon resistor and the preparing of the third polysilicon resistor specifically include:
Step A1: providing a substrate;
Step A2: sequentially laminating an epitaxial layer, an oxide layer and polysilicon on the substrate, and forming a passivation layer covering the polysilicon on the oxide layer;
Step A3: forming a pair of metal contact holes on the passivation layer; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
In a preferred embodiment, the preparing of the second polysilicon resistor and the preparing of the third polysilicon resistor specifically include:
step B1: providing two separate substrates;
step B2: forming an epitaxial layer, an oxide layer, polysilicon on the two independent substrates respectively, and forming a passivation layer covering each polysilicon on the oxide layer;
Step B3: forming a pair of metal contact holes on each passivation layer respectively; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
In a preferred embodiment, the preparing of the second polysilicon resistor and the preparing of the third polysilicon resistor specifically include:
Step C1: providing a common substrate;
Step C2: forming a common epitaxial layer, a common oxide layer, polysilicon of the second polysilicon resistor and the third polysilicon resistor on the common substrate, and forming a common passivation layer respectively covering each polysilicon on the common oxide layer;
Step C3: forming a pair of metal contact holes on the common passivation layer on each polysilicon; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
In this embodiment, for the design of the polysilicon resistor series structure, the second polysilicon resistor and the third polysilicon resistor may be respectively constructed by using an independent substrate, an epitaxial layer, an oxide layer and a passivation layer, or the second polysilicon resistor and the third polysilicon resistor may be constructed by using a common substrate, an epitaxial layer, an oxide layer and a passivation layer. When the second polysilicon resistor and the third polysilicon resistor are independently constructed, the second polysilicon resistor and the third polysilicon resistor are connected through the metal contact hole and the serial connection line between the second polysilicon resistor and the third polysilicon resistor, and the mode has higher flexibility in selecting and using the polysilicon resistor; when the second polysilicon resistor and the third polysilicon resistor are combined and built, the second polysilicon resistor and the third polysilicon resistor are connected by adopting a metal contact hole and a series connection wire between the metal contact hole and the third polysilicon resistor, and also have a shared substrate, an epitaxial layer, an oxide layer and a passivation layer, so that the mode has higher preparation efficiency; thus, various alternative embodiments are provided for the polysilicon resistor series structure.
Example 3:
in an embodiment of the present invention, an audio differential circuit includes:
An audio operational amplifier; and
The polysilicon resistor circuit is arranged between the inverting input end, the non-inverting input end, the output end or the non-inverting input end of the audio operational amplifier and the reference voltage input end or the grounding end.
In practical application, as shown in fig. 5, when the audio differential circuit is in the inversion mode, i.e. the polysilicon resistor circuit is disposed at the inversion input end and the output end, R1, R2, R3 form the polysilicon resistor circuit disposed at the inversion input end, and R4, R5, R6 form the polysilicon resistor circuit disposed at the output end, at this time:
Satisfy the following requirements =/>/2，/>=/>2, Whereas in normal phase mode vx+=vx- =0v,/>//>The result is constant at-1, i.e. the output remains linear increasing THD.
In practical application, as shown in fig. 6, when the audio differential circuit is in the normal phase mode, i.e. the polysilicon resistor circuit is disposed between the normal phase input terminal and the reference voltage input terminal, R7, R8, R9 form the polysilicon resistor circuit disposed between the reverse phase input terminal, and R10, R11, R12 form the polysilicon resistor circuit disposed between the normal phase input terminal and the reference voltage input terminal, at this time:
The expression of (2) is: ；
When vref=0, V B,10 =vx+/2, the above formula is simplified as follows: ；
The expression of (2) is: ；
When vref=0, V B,3 =vx-/2, the above formula is simplified as follows: ；
From vx+=vx-, vip=v OUT can be deduced, and does not change with a change in the input signal amplitude, i.e. the output remains linear increasing THD.
In practical application, as shown in fig. 7, when the audio differential circuit is in the full differential mode, i.e., the polysilicon resistor circuit is disposed between the inverting input terminal, the non-inverting input terminal, the output terminal, and the non-inverting input terminal and the ground terminal, R1, R2, R3 form the polysilicon resistor circuit disposed between the inverting input terminal, R4, R5, R6 form the polysilicon resistor circuit disposed between the non-inverting input terminal and the reference voltage input terminal, R7, R8, R9 form the polysilicon resistor circuit disposed between the inverting input terminal, and R10, R11, R12 form the polysilicon resistor circuit disposed between the non-inverting input terminal and the ground terminal, at this time:
The inputs Vin and Vip are a pair of fully differential signals, when constant =/>/2，=/>/2，/>=/>/2，/>=/>And/2, so that the resistance value of each R in the circuit is not influenced by the substrate potential any more, namely, the resistance value is kept constant, so that the gain is kept constant, the linearity of an output signal is ensured, and the THD index of the output signal is greatly improved.
Therefore, the embodiment provides the audio frequency differential circuit, through improving the substrate of the polysilicon resistor, the gain of the circuit is kept constant, the output and the input are in a linear relation, so that the circuit can keep higher linearity under the application of normal phase inversion and full differential mode, and THD can be kept at higher level.
The specific implementation of the audio frequency differential circuit is basically the same as that of each embodiment of the polysilicon resistor circuit, and is not repeated here.
In describing embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "center", "top", "bottom", "inner", "outer", "inside", "outside", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Wherein "inside" refers to an interior or enclosed area or space. "peripheral" refers to the area surrounding a particular component or region.
In the description of embodiments of the present invention, the terms "first," "second," "third," "fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", "a third" and a fourth "may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In describing embodiments of the present invention, it should be noted that the terms "mounted," "connected," and "assembled" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, unless otherwise specifically indicated and defined; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the description of embodiments of the invention, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
In describing embodiments of the present invention, it will be understood that the terms "-" and "-" are intended to be inclusive of the two numerical ranges, and that the ranges include the endpoints. For example, "A-B" means a range greater than or equal to A and less than or equal to B. "A-B" means a range of greater than or equal to A and less than or equal to B.
In the description of embodiments of the present invention, the term "and/or" is merely an association relationship describing an association object, meaning that three relationships may exist, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A polysilicon resistor circuit, comprising:
the first resistor branch comprises a first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end;
The second resistor branch comprises a potential adjusting circuit;
wherein the potential adjustment circuit is connected with the substrate of the first polysilicon resistor and is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end;
The potential adjustment circuit specifically includes:
The device comprises a polysilicon resistor series structure, a second input connecting wire for connecting the polysilicon resistor series structure with a main input end, a second output connecting wire for connecting the polysilicon resistor series structure with a main output end, and an intermediate potential lead-out connecting wire for connecting the polysilicon resistor series structure with a first polysilicon resistor substrate;
the polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end according to the intermediate potential lead-out connection line;
The polysilicon resistor series structure specifically comprises:
The second polysilicon resistor, the third polysilicon resistor and the series connection line connecting the second polysilicon resistor and the third polysilicon resistor;
The second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
2. The polysilicon resistor circuit of claim 1, wherein the first polysilicon resistor, the second polysilicon resistor, and the third polysilicon resistor comprise:
A substrate;
Sequentially laminating an epitaxial layer, an oxide layer and polysilicon which are arranged on the substrate, and a passivation layer which is arranged on the oxide layer and covers the polysilicon;
The passivation layer is provided with a pair of metal contact holes, and the metal contact holes comprise a first metal contact hole connected with the second input connecting wire or the second output connecting wire and a second metal contact hole connected with the series connecting wire.
3. The polysilicon resistor circuit of claim 2, wherein the series arrangement of polysilicon resistors is configured to be formed using separate second and third polysilicon resistor connections;
The second polysilicon resistor and the third polysilicon resistor are provided with independent substrates, epitaxial layers, oxide layers and passivation layers;
The second polysilicon resistor and the third polysilicon resistor are connected only through the series connection line.
4. The polysilicon resistor circuit of claim 2, wherein the series configuration of polysilicon resistors is configured to be formed using a combined second polysilicon resistor and third polysilicon resistor connection;
Wherein the second polysilicon resistor and the third polysilicon resistor have a common substrate, epitaxial layer, oxide layer and passivation layer;
the polysilicon of the first polysilicon resistor and the polysilicon of the second polysilicon resistor are arranged on a shared oxide layer and covered by a shared passivation layer, and each pair of metal contact holes is arranged on the passivation layer on one polysilicon.
5. The preparation method of the polysilicon resistor circuit is characterized by comprising the following steps:
preparing a first polysilicon resistor;
constructing a first resistor branch comprising the first polysilicon resistor, a first input connecting wire for connecting the first polysilicon resistor with a total input end and a first output connecting wire for connecting the first polysilicon resistor with a total output end;
Preparing a potential adjusting circuit;
Constructing a second resistance branch comprising the potential adjustment circuit;
Connecting the potential adjustment circuit to the substrate of the first polysilicon resistor to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input terminal and the total output terminal;
the preparation potential adjusting circuit specifically comprises:
Preparing a polysilicon resistor series structure;
constructing a potential adjusting circuit comprising the polysilicon resistor serial structure, a second input connecting wire for connecting the polysilicon resistor serial structure with a total input end, a second output connecting wire for connecting the polysilicon resistor serial structure with a total output end and an intermediate potential leading-out connecting wire for connecting the polysilicon resistor serial structure with a first polysilicon resistor substrate;
the polysilicon resistor series structure is configured to adjust the substrate potential of the first polysilicon resistor to an intermediate potential between the total input end and the total output end according to the intermediate potential lead-out connection line;
the preparation of the polysilicon resistor series structure specifically comprises the following steps:
preparing a second polysilicon resistor and a third polysilicon resistor;
constructing a polysilicon resistor series structure comprising the second polysilicon resistor, the third polysilicon resistor and a series connection line connecting the second polysilicon resistor and the third polysilicon resistor;
The second polysilicon resistor and the third polysilicon resistor are configured to have the same resistance value, and the intermediate potential lead-out connection line is configured to connect the series connection line and the substrate of the first polysilicon resistor.
6. The method of manufacturing a polysilicon resistor circuit of claim 5, wherein the steps of manufacturing a first polysilicon resistor, manufacturing a second polysilicon resistor, and manufacturing a third polysilicon resistor comprise:
Providing a substrate;
sequentially laminating an epitaxial layer, an oxide layer and polysilicon on the substrate, and forming a passivation layer covering the polysilicon on the oxide layer;
Forming a pair of metal contact holes on the passivation layer; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
7. The method of manufacturing a polysilicon resistor circuit of claim 6, wherein the steps of manufacturing a second polysilicon resistor and manufacturing a third polysilicon resistor comprise:
Providing two separate substrates;
Forming an epitaxial layer, an oxide layer, polysilicon on the two independent substrates respectively, and forming a passivation layer covering each polysilicon on the oxide layer;
Forming a pair of metal contact holes on each passivation layer respectively; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
8. The method of manufacturing a polysilicon resistor circuit of claim 6, wherein the steps of manufacturing a second polysilicon resistor and manufacturing a third polysilicon resistor comprise:
Providing a common substrate;
Forming a common epitaxial layer, a common oxide layer, polysilicon of the second polysilicon resistor and the third polysilicon resistor on the common substrate, and forming a common passivation layer respectively covering each polysilicon on the common oxide layer;
Forming a pair of metal contact holes on the common passivation layer on each polysilicon; the metal contact holes comprise a first metal contact hole connected with the second input connection line or the second output connection line and a second metal contact hole connected with the series connection line.
9. An audio differencing circuit, comprising:
An audio operational amplifier; and
The polysilicon resistor circuit of any one of claims 1-4 disposed between an inverting input, a non-inverting input, an output, or a non-inverting input of the audio operational amplifier and a reference voltage input or ground.
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