CN115459725A - Miniaturized band-pass filter and radio frequency front-end circuit - Google Patents
Miniaturized band-pass filter and radio frequency front-end circuit Download PDFInfo
- Publication number
- CN115459725A CN115459725A CN202211220154.2A CN202211220154A CN115459725A CN 115459725 A CN115459725 A CN 115459725A CN 202211220154 A CN202211220154 A CN 202211220154A CN 115459725 A CN115459725 A CN 115459725A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- inductor
- port
- metal layer
- dielectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20309—Strip line filters with dielectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Filters And Equalizers (AREA)
Abstract
The invention discloses a miniaturized band-pass filter and a radio frequency front-end circuit, wherein the filter comprises a filter circuit, a signal input port, a signal output port, a first grounding port, a second grounding port and a third grounding port, the signal input port, the signal output port, the first grounding port, the second grounding port and the third grounding port are respectively connected with the filter circuit, the filter circuit is arranged on a multilayer metal layer by adopting an integrated passive device technology and is composed of a plurality of inductors and a plurality of capacitors, and a filter circuit layout is in a plane symmetrical structure. The filter is designed by adopting an integrated passive device technology, the size of a filter chip is reduced on the premise of considering the electrostatic protection capability of a circuit, a plurality of transmission zeros are introduced through a plurality of signal paths and lumped elements, and the sideband selectivity and stop band suppression depth and width of the filter are improved.
Description
Technical Field
The invention relates to a band-pass filter, in particular to a miniaturized band-pass filter and a radio frequency front-end circuit, and belongs to the technical field of wireless communication.
Background
With the rapid development of mobile communication systems, the market demand for radio frequency communication devices has also increased rapidly. Meanwhile, due to the improvement of the processing technology precision, the performance requirement on the radio frequency device is higher than that of the prior art. Among them, a miniaturized high-selectivity filter having characteristics of steep sideband, deep stopband rejection, small passband loss, high electrostatic protection, and the like is a key point of research by current practitioners of radio frequency technology.
The Integrated Passive Device (IPD) technology can integrate radio frequency front-end devices such as a band-pass filter, a band-stop filter, a power divider, a balun, a duplexer or a multiplexer and the like in a smaller substrate space, so that the performance is improved, and the integral integration level of a circuit is improved. But because of the limitation of the semiconductor process, the IPD technology also has the defect of small Q value of the device, which directly restricts the electrical performance of the filter; in addition, the capacitance of the thin film process is resistant to low electrostatic voltage, and at present, an extra large inductance value is generally connected in parallel to the ground at the input/output port to improve the electrostatic protection capability of the chip. How to design a filter chip with a certain electrostatic protection capability by using an IPD process to meet the miniaturization and high selectivity of the requirement of a terminal radio frequency module needs to be deeply researched.
Disclosure of Invention
The invention aims to overcome the defects of the existing radio frequency device, and provides a miniaturized band-pass filter which is designed by adopting an integrated passive device technology, reduces the size of a filter chip on the premise of considering the electrostatic protection capability of a circuit, and improves the sideband selectivity of the filter and the stop band suppression depth and width by constructing a plurality of signal channels and lumped elements and introducing a plurality of transmission zeros.
Another objective of the present invention is to provide an rf front-end circuit.
The purpose of the invention can be achieved by adopting the following technical scheme:
the utility model provides a miniaturized band-pass filter, includes filter circuit, signal input port, signal output port, first ground connection port, second ground connection port and third ground connection port, signal input port, signal output port, first ground connection port, second ground connection port, third ground connection port are connected with filter circuit respectively, filter circuit adopts the integrated passive device overall arrangement on multilayer metal layer, comprises a plurality of inductances and a plurality of electric capacity, and the filter circuit domain is the plane symmetric structure.
Further, the filter circuit includes a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, and a sixth capacitor;
the third inductor and the fifth capacitor as well as the fourth inductor and the sixth capacitor respectively form two-order parallel resonance of the filter, and are magnetically coupled through the first grounding port to form a radio frequency signal main channel; the third capacitor and the fourth capacitor respectively control the external quality factors of the signal input port and the signal output port; the first capacitor and the second capacitor are connected in series to form a source load cross coupling channel; the first inductor and the second inductor generate magnetic coupling through a first grounding port to form a third signal channel; the fifth capacitor and the second grounding port and the sixth capacitor and the third grounding port form two series resonance ground circuits.
Furthermore, one end of the first inductor is connected with the signal input port, and the other end of the first inductor is connected with the first grounding port; one end of the second inductor is connected with the signal output port, and the other end of the second inductor is connected with the first grounding port;
one end of the first capacitor is connected with the signal input port, the other end of the first capacitor is connected with one end of the second capacitor, and the other end of the second capacitor is connected with the signal output port;
one end of the third capacitor is connected with the signal input port, the other end of the third capacitor is connected with one end of a fifth capacitor, and the other end of the fifth capacitor is connected with the second grounding port;
one end of the fourth capacitor is connected with the signal output port, the other end of the fourth capacitor is connected with one end of a sixth capacitor, and the other end of the sixth capacitor is connected with a third grounding port;
one end of the third inductor is connected with the other end of the third capacitor, one end of the fourth inductor is connected with the other end of the fourth capacitor, and the other ends of the third inductor and the fourth inductor are connected and connected together to be connected to the first ground port.
Furthermore, the first inductor, the second inductor, the third inductor and the fourth inductor all adopt a 3D three-dimensional structure, wherein the inductance values of the first inductor and the second inductor are equal, and the inductance values of the third inductor and the fourth inductor are equal.
Furthermore, the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor all adopt an MIM parallel plate structure, wherein the capacitance values of the first capacitor and the second capacitor are equal, the capacitance values of the third capacitor and the fourth capacitor are equal, and the capacitance values of the fifth capacitor and the sixth capacitor are equal.
Furthermore, the top layer and the bottom layer of the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor are all made of metal materials, an intermediate layer is added between the top layer and the bottom layer, and the intermediate layer is made of insulating materials.
Furthermore, the metal layers are three layers, the three metal layers are respectively a first metal layer, a second metal layer and a third metal layer, the first metal layer, the second metal layer and the third metal layer are sequentially stacked from bottom to top, and the first metal layer is in signal connection with the second metal layer and the third metal layer through metal through holes.
The metal-clad laminate further comprises four layers of dielectric substrates, wherein the four layers of dielectric substrates are respectively a first dielectric substrate, a second dielectric substrate, a third dielectric substrate and a fourth dielectric substrate, the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate are sequentially stacked from bottom to top, the first metal layer is deposited in the first dielectric substrate, the second metal layer is deposited in the second dielectric substrate, and the third metal layer is deposited in the fourth dielectric substrate.
Further, the first dielectric substrate, the second dielectric substrate and the fourth dielectric substrate are passivation protection layers, and the third dielectric substrate is a glass substrate layer.
The other purpose of the invention can be achieved by adopting the following technical scheme:
a radio frequency front-end circuit comprises the miniaturized band-pass filter.
Compared with the prior art, the invention has the following beneficial effects:
the invention utilizes the inductance of the parallel resonator in the filter circuit to construct an all-metal path directly from the input port to the ground, and ensures the electrostatic protection capability of the input and output double-side port under the conditions of no additional inductance and occupying additional area; in addition, the invention utilizes the integrated passive device process to lay out a transverse plane symmetrical circuit structure, thereby effectively improving the integration level of the filter, reducing the circuit size and simultaneously reducing the complexity of circuit design and debugging; the designed filter can introduce a plurality of limited frequency transmission zeros at two sides of a passband, optimizes sideband selectivity and stopband rejection width and depth, and can well meet the index requirements of a 5G communication radio frequency front-end module on a filter device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a layout of a filter circuit of a miniaturized bandpass filter according to an embodiment of the present invention.
Fig. 2 is a process structure diagram of the miniaturized bandpass filter according to the embodiment of the invention.
Fig. 3 is a schematic top view of a first metal layer in the miniaturized bandpass filter according to the embodiment of the present invention.
Fig. 4 is a schematic top view of a second metal layer in the miniaturized bandpass filter according to the embodiment of the present invention.
Fig. 5 is a schematic top view of a third metal layer in the miniaturized bandpass filter according to the embodiment of the invention.
Fig. 6 is a graph of electromagnetic simulation S-parameters of the miniaturized band-pass filter according to the embodiment of the present invention.
Figure 7 is a detail view of the S-parameter curve for the passband portion of the miniaturized bandpass filter according to an embodiment of the present invention.
FIG. 8 is a detailed diagram of S-parameter curve of 0.7-2.7GHz of the miniaturized band-pass filter according to the embodiment of the invention.
FIG. 9 is a detailed diagram of S-parameter curve of 5.15-5.95GHz of the miniaturized band-pass filter according to the embodiment of the invention.
FIG. 10 is a detailed diagram of the S-parameter curve of the second harmonic band of the miniaturized band-pass filter according to the embodiment of the present invention.
Fig. 11 is a detailed diagram of the S-parameter curve of the third harmonic band of the miniaturized bandpass filter according to the embodiment of the present invention.
101-a first dielectric substrate, 102-a second dielectric substrate, 103-a third dielectric substrate, 104-a fourth dielectric substrate, 201-a first metal layer, 202-a second metal layer, 203-a third metal layer, 301-a signal input port, 302-a signal output port, 303-a first ground port, 304-a second ground port, 305-a third ground port, L1-a first inductor, L2-a second inductor, L3-a third inductor, L4-a fourth inductor, C1-a first capacitor, C2-a second capacitor, C3-a third capacitor, C4-a fourth capacitor, C5-a fifth capacitor, and C6-a sixth capacitor.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The embodiment is as follows:
as shown in fig. 1 and fig. 2, the present embodiment provides a miniaturized bandpass filter, which includes a filter circuit, a signal input port 301, a signal output port 302, a first ground port 303, a second ground port 304, and a third ground port 305, where the signal input port 301, the signal output port 302, the first ground port 303, the second ground port 304, and the third ground port 305 are respectively connected to the filter circuit, the filter circuit is laid out on a three-layer metal layer by using an integrated passive device technology and is formed by multiple inductors and multiple capacitors, a layout of the filter circuit is in a plane-symmetric structure, a conductor material in the filter of the present embodiment is copper, and sizes of elements and a trace width are in a micrometer scale.
As shown in fig. 1 to 5, the three metal layers are a first metal layer 201, a second metal layer 202 and a third metal layer 203, the first metal layer 201, the second metal layer 202 and the third metal layer 203 are sequentially stacked from bottom to top, and the first metal layer 201 and the second metal layer 202 and the third metal layer 203 are in signal connection through metal vias.
In order to better arrange a filter circuit and protect the first metal layer 201, the second metal layer 202 and the third metal layer 203, the filter of the embodiment further comprises four layers of dielectric substrates, the four layers of dielectric substrates are respectively a first dielectric substrate 101, a second dielectric substrate 102, a third dielectric substrate 103 and a fourth dielectric substrate 104, the first dielectric substrate 101, the second dielectric substrate 102, the third dielectric substrate 103 and the fourth dielectric substrate 104 are sequentially stacked from bottom to top, the first metal layer 201 is deposited in the first dielectric substrate 101, the second metal layer 202 is deposited in the second dielectric substrate 102, and the third metal layer 203 is deposited in the fourth dielectric substrate 104; each dielectric substrate may include, but is not limited to, glass, silicon nitride, and polyimide, and the first dielectric substrate 101, the second dielectric substrate 102, and the fourth dielectric substrate 104 of this embodiment are passivation protective layers, and the third dielectric substrate 103 is a glass substrate layer.
Further, the filter circuit includes a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, and a sixth capacitor C6.
The third inductor C3 and the fifth capacitor C5, and the fourth inductor C4 and the sixth capacitor C6 respectively form two-order parallel resonance of the filter, and are magnetically coupled through the first grounding port 303 to form a radio frequency signal main channel, so that passband frequency response is generated; the third capacitor C3 and the fourth capacitor C4 respectively control the external quality factors of the signal input port 301 and the signal output port 302; the first capacitor C1 and the second capacitor C2 are connected in series to form a source load cross coupling channel, and a transmission zero can be generated on each side of a pass band; the first inductor and the second inductor generate magnetic coupling through the first grounding port to form a third signal channel, an additional path is generated for signals, and a transmission zero point is introduced at low frequency; the fifth capacitor C5 and the second ground port 304, and the sixth capacitor C6 and the third ground port 305 form two series resonant ground circuits, which can generate two transmission zeros in a high impedance band.
In order to realize the specific functions of the filter circuit, one end of the first inductor L1 is connected to the signal input port 301, and the other end of the first inductor L1 is connected to the first ground port 303; one end of the second inductor L2 is connected to the signal output port 302, and the other end of the second inductor L2 is connected to the first ground port 303; the first inductor L1 and the second inductor L2 not only participate in the parallel resonance of the circuit and support the frequency selection function of the filter circuit, but also directly connect the signal input port 301 and the signal output port 302 to the ground, so that the electrostatic protection capability of the filter circuit is greatly improved; one end of the first capacitor is connected with the signal input port, the other end of the first capacitor C1 is connected with one end of the second capacitor C2, and the other end of the second capacitor is connected with the signal output port 302; one end of the third capacitor C3 is connected to the signal input port 301, the other end of the third capacitor C3 is connected to one end of the fifth capacitor C5, and the other end of the fifth capacitor C5 is connected to the second ground port 304; one end of the fourth capacitor C4 is connected to the signal output port 302, the other end of the fourth capacitor C4 is connected to one end of the sixth capacitor C6, and the other end of the sixth capacitor C6 is connected to the third ground port 305; one end of the third inductor L3 is connected to the other end of the third capacitor C3, one end of the fourth inductor L4 is connected to the other end of the fourth capacitor C4, and the other end of the third inductor L3 is connected to the other end of the fourth inductor L4 and connected to the first ground port 303.
Furthermore, the first inductor L1, the second inductor L2, the third inductor L3, and the fourth inductor L4 all adopt a 3D three-dimensional structure, so that the inductors have a high Q-value characteristic, and the circuit loss is reduced, wherein the inductance values of the first inductor L1 and the second inductor L2 are equal, and the inductance values of the third inductor L3 and the fourth inductor L4 are equal.
Furthermore, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, and the sixth capacitor C6 all adopt an MIM parallel plate structure, wherein the capacitance values of the first capacitor and the second capacitor are equal, the capacitance values of the third capacitor and the fourth capacitor are equal, and the capacitance values of the fifth capacitor and the sixth capacitor are equal.
Further, the top layer and the bottom layer of the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5 and the sixth capacitor C6 are all made of metal materials, an intermediate layer is added between the top layer of the capacitor and the bottom layer of the capacitor, the intermediate layer is made of insulating materials, in this embodiment, the top layer of the capacitor is arranged on the second metal layer 202, and the bottom layer of the capacitor is arranged on the first metal layer 201.
The filter of the embodiment enables the parallel inductor in the filter circuit to participate in the resonant support frequency selection through a collaborative fusion design, and also provides a metal path with an input/output bilateral port directly facing the ground, so that the electrostatic protection capability of a filter chip is improved, and the circuit size is reduced; the complexity of circuit design and debugging is reduced by adopting a transverse plane symmetrical structural layout; the filter is miniaturized, improves the electrostatic protection, introduces a plurality of limited frequency transmission zero points, ensures sideband selectivity and stop band suppression width and depth, and can well meet the index requirements of a 5G communication radio frequency front-end module on a filter device.
As shown in fig. 6, an electromagnetic simulation graph of the miniaturized high-selectivity IPD bandpass filter and the rf front-end circuit provided in this embodiment is shown; simulation results show that the pass band range of the filter is 3.3GHz-4.2GHz, the in-band return loss is better than-18 dB as a whole, the filter is suitable for the N77 frequency band of a fifth generation mobile communication network, two transmission zeros and three transmission zeros are respectively arranged in the stop bands at two sides of the pass band, wherein the transmission zeros of the low resistance band are positioned at 1.59GHz and 2.67GHz, and the transmission zeros of the high resistance band are positioned at 5.69GHz, 12.7GHz and 22.9GHz; it can be observed that the high impedance band remains below-20 dB to a suppression level at 29 GHz.
As shown in fig. 7, which is a detail diagram of the passband S-parameter curve of the filter of this embodiment, the floating range of the insertion loss of the filter is 0.92dB to 1.24dB in the frequency band range of 3.3GHz to 4.2 GHz.
As shown in fig. 8, which is a detailed graph of an S-parameter curve of the filter of this embodiment at a frequency band between 0.7GHz and 2.7GHz, a simulation result shows that the rejection at the frequency band between 0.7GHz and 2.7GHz is kept below-24 dB, thereby ensuring good isolation between the filter chip and 2-4G cellular network, wiFi 2.4G and GNSS signals.
As shown in fig. 9, which is a detailed graph of the S-parameter curve of the filter of this embodiment in the 5.15GHz-5.95GHz band, simulation results show that the suppression in this band is kept below-15 dB, which ensures better isolation between the filter chip and the WiFi 5G signal.
As shown in fig. 10 and 11, simulation results for the S-parameter curves of the filter of the embodiment of the present application in the second harmonic and third harmonic frequency bands of the passband show that the filter attenuation remains below-26.5 dB in the second harmonic frequency range and below-32 dB in the third harmonic frequency range.
In conclusion, the invention effectively reduces the size of the filter and reduces the loss on the premise of ensuring the electrostatic protection capability, and improves the frequency selection characteristic of the filter by introducing a plurality of transmission zeros at two sides of the passband; in addition, the filtering scheme uses less capacitance and inductance devices, has symmetrical layout transverse planes and simple circuit structure, is not limited to the design of an N77 frequency band filter, and can be expanded and applied to other communication frequency bands.
The above description is only for the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the scope of the present invention.
Claims (10)
1. The utility model provides a miniaturized band-pass filter, its characterized in that includes filter circuit, signal input port, signal output port, first ground connection port, second ground connection port and third ground connection port, signal input port, signal output port, first ground connection port, second ground connection port, third ground connection port are connected with filter circuit respectively, filter circuit adopts the integrated passive component overall arrangement on multilayer metal level, comprises a plurality of inductances and a plurality of electric capacity, and the filter circuit domain is the plane symmetric structure.
2. The miniaturized bandpass filter of claim 1 wherein the filter circuit comprises a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, and a sixth capacitor;
the third inductor and the fifth capacitor as well as the fourth inductor and the sixth capacitor respectively form two-order parallel resonance of the filter, and are magnetically coupled through the first grounding port to form a radio frequency signal main channel; the third capacitor and the fourth capacitor respectively control the external quality factors of the signal input port and the signal output port; the first capacitor and the second capacitor are connected in series to form a source load cross coupling channel; the first inductor and the second inductor generate magnetic coupling through a first grounding port to form a third signal channel; the fifth capacitor and the second grounding port and the sixth capacitor and the third grounding port form two series resonance ground circuits.
3. The miniaturized band-pass filter of claim 2, wherein one end of the first inductor is connected to the signal input port and the other end of the first inductor is connected to the first ground port; one end of the second inductor is connected with the signal output port, and the other end of the second inductor is connected with the first grounding port;
one end of the first capacitor is connected with the signal input port, the other end of the first capacitor is connected with one end of the second capacitor, and the other end of the second capacitor is connected with the signal output port;
one end of the third capacitor is connected with the signal input port, the other end of the third capacitor is connected with one end of a fifth capacitor, and the other end of the fifth capacitor is connected with the second grounding port;
one end of the fourth capacitor is connected with the signal output port, the other end of the fourth capacitor is connected with one end of a sixth capacitor, and the other end of the sixth capacitor is connected with a third grounding port;
one end of the third inductor is connected with the other end of the third capacitor, one end of the fourth inductor is connected with the other end of the fourth capacitor, and the other ends of the third inductor and the fourth inductor are connected and connected together to be connected to the first ground port.
4. The miniaturized band-pass filter of any one of claims 2 to 3, wherein the first inductor, the second inductor, the third inductor and the fourth inductor all adopt a 3D three-dimensional structure, wherein the inductance values of the first inductor and the second inductor are equal, and the inductance values of the third inductor and the fourth inductor are equal.
5. The miniaturized band-pass filter of any one of claims 2 to 3, wherein the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor are all of MIM parallel plate structure, wherein the first capacitor and the second capacitor have the same capacitance value, the third capacitor and the fourth capacitor have the same capacitance value, and the fifth capacitor and the sixth capacitor have the same capacitance value.
6. The miniaturized band-pass filter according to any one of claims 2 to 3, wherein the top layer and the bottom layer of the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor are made of metal materials, an intermediate layer is added between the top layer and the bottom layer, and the intermediate layer is made of insulating materials.
7. The miniaturized band-pass filter according to any one of claims 1 to 3, wherein the metal layers are three layers, the three metal layers are a first metal layer, a second metal layer and a third metal layer, the first metal layer, the second metal layer and the third metal layer are sequentially stacked from bottom to top, and the first metal layer and the second metal layer and the third metal layer are in signal connection through metal via holes.
8. The miniaturized bandpass filter according to claim 7, further comprising four dielectric substrates, wherein the four dielectric substrates are a first dielectric substrate, a second dielectric substrate, a third dielectric substrate and a fourth dielectric substrate, respectively, the first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the fourth dielectric substrate are sequentially stacked from bottom to top, the first metal layer is deposited in the first dielectric substrate, the second metal layer is deposited in the second dielectric substrate, and the third metal layer is deposited in the fourth dielectric substrate.
9. The miniaturized band-pass filter of claim 8 wherein the first, second and fourth dielectric substrates are passivation protective layers, third dielectric substrate glass substrate layers.
10. A radio frequency front-end circuit comprising a miniaturized band-pass filter according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211220154.2A CN115459725A (en) | 2022-10-08 | 2022-10-08 | Miniaturized band-pass filter and radio frequency front-end circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211220154.2A CN115459725A (en) | 2022-10-08 | 2022-10-08 | Miniaturized band-pass filter and radio frequency front-end circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115459725A true CN115459725A (en) | 2022-12-09 |
Family
ID=84308894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211220154.2A Pending CN115459725A (en) | 2022-10-08 | 2022-10-08 | Miniaturized band-pass filter and radio frequency front-end circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115459725A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024164584A1 (en) * | 2023-02-10 | 2024-08-15 | 华南理工大学 | Miniaturized high-selectivity ipd band-pass filter and radio frequency front end |
| WO2024192668A1 (en) * | 2023-03-21 | 2024-09-26 | 京东方科技集团股份有限公司 | Filter, integrated passive device, and electronic device |
-
2022
- 2022-10-08 CN CN202211220154.2A patent/CN115459725A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024164584A1 (en) * | 2023-02-10 | 2024-08-15 | 华南理工大学 | Miniaturized high-selectivity ipd band-pass filter and radio frequency front end |
| WO2024192668A1 (en) * | 2023-03-21 | 2024-09-26 | 京东方科技集团股份有限公司 | Filter, integrated passive device, and electronic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201156573Y (en) | Integrated wave-guide band filter based on foldable substrate | |
| CN103138703B (en) | A kind of lamination high pass filter | |
| CN115459725A (en) | Miniaturized band-pass filter and radio frequency front-end circuit | |
| CN104466335A (en) | Electric adjusting power divider with filter function | |
| CN110474618B (en) | Ultra-small high-Q-value band-pass filter based on LTCC process | |
| CN113328713B (en) | Vertically stacked packaging filter | |
| CN112953431A (en) | IPD filter chip suitable for microwave and millimeter wave | |
| CN108711664A (en) | Broadband band hinders resonance filter | |
| CN102064368A (en) | LTCC wide-stop band band-pass filter | |
| US6091312A (en) | Semi-lumped bandstop filter | |
| CN109755711A (en) | The double-deck half module substrate integrated wave guide wideband filtered coupler | |
| WO2024164584A1 (en) | Miniaturized high-selectivity ipd band-pass filter and radio frequency front end | |
| US6064281A (en) | Semi-lumped bandpass filter | |
| CN105048034A (en) | Low temperature co-fired ceramic (LTCC)-based switch type band-pass filter | |
| CN103138705A (en) | Band-pass filter | |
| CN115313001B (en) | Miniaturized high out-of-band rejection band-pass filter based on IPD | |
| CN109150130A (en) | A kind of inductive type bandpass filter | |
| CN114094968A (en) | LTCC band-pass filter with matched ports | |
| CN110492209B (en) | Self-packaging ultra-wideband balanced filter based on multi-layer LCP circuit technology | |
| CN114374369A (en) | Low temperature co-fired ceramic (LTCC) process-based duplexer with low-frequency transmission zero point | |
| CN112002970A (en) | Miniaturized millimeter wave on-chip band-pass filter | |
| CN112751543A (en) | Filter bank | |
| CN111555729A (en) | Novel band-pass filter | |
| US20240283422A1 (en) | Filter, integrated passive device, electronic device and display device | |
| CN216873167U (en) | Low-pass and band-pass duplexer based on LTCC process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |