CN115378468B - Millimeter wave isolation device - Google Patents
Millimeter wave isolation device Download PDFInfo
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- CN115378468B CN115378468B CN202211132475.7A CN202211132475A CN115378468B CN 115378468 B CN115378468 B CN 115378468B CN 202211132475 A CN202211132475 A CN 202211132475A CN 115378468 B CN115378468 B CN 115378468B
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- 238000002955 isolation Methods 0.000 title claims abstract description 55
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 45
- 238000004806 packaging method and process Methods 0.000 claims description 31
- 230000009977 dual effect Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000008054 signal transmission Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/75—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for isolation purposes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
- H04B5/48—Transceivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/72—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for local intradevice communication
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Transceivers (AREA)
- Radar Systems Or Details Thereof (AREA)
- Near-Field Transmission Systems (AREA)
Abstract
The invention discloses a millimeter wave isolation device, which comprises a first isolated circuit, a second isolated circuit and a millimeter wave transceiver, wherein the first isolated circuit and the second isolated circuit are isolated; the output end of the first isolated circuit is connected with the input end of the millimeter wave transceiver; the output end of the millimeter wave transceiver is connected with the input end of the second isolated circuit; the millimeter wave transceiver is used for realizing isolation between the first isolated circuit and the second isolated circuit, millimeter waves are used as a short-distance transmission mode of carrier waves, the bandwidth can reach 200kHz to 20GHz, the transmission speed can reach 100kbps to 10Gbps, the speed is high, the millimeter wave transceiver is applicable to any scene, the millimeter wave carrier antenna is small, wireless transmission can be realized through the antenna, signal isolation can be realized, an optical coupler and an additional isolation layer are not needed, and even if a product is penetrated, the antenna can not cause metal short circuit, so that the signal transmission speed is high, the time delay is small, the efficiency is high, and the security is improved while good isolation is realized.
Description
Technical Field
The present invention relates to signal isolation devices, and more particularly, to a millimeter wave isolation device.
Background
High voltage circuits have found widespread use in our daily lives, such as power supply circuits, motor drive circuits, and the like. The battery fast charging technology used by the handheld device is more a classical application of a high-voltage circuit.
In a typical high voltage circuit, the high voltage circuit is generally composed of a low voltage region (Low voltage field) and a high voltage region (High voltage field). The low voltage region is typically used to generate the trigger signal and the digital signal, and the high voltage region is typically a high voltage circuit such as a charging circuit, a motor circuit, or a special high voltage device (GaN, siC, LDMOS), etc. Signals need to be transferred between the high and low voltage regions and a high degree of isolation is required to prevent damage to the low voltage region by the high voltage region. Typically, this device for transferring signals and isolating is called a Switch or isolator (Isolator).
As shown in fig. 1, the current mainstream isolators include optocouplers (Photo couplers), capacitive sensing (CAPACITIVE COUPLING) circuits, or coil (inductive) sensing (Inductive coupling) circuits. However, optocouplers require additional separate devices, capacitive circuits require special oxide materials, and coil sensing circuits have area problems. Thus, with the demand for new high-voltage circuits for fast response time, low delay, and high-bandwidth digital signal processing. The three types of isolators cannot meet the requirements. In addition, the new high-voltage circuit has another strict requirement that no short circuit can occur after the high-voltage is broken, and the coil and the capacitor have potential short circuit phenomena.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the millimeter wave isolation device is provided, and the signal isolation is realized and the efficient and safe transmission of the signal is ensured.
In order to solve the technical problems, the invention adopts a technical scheme that:
a millimeter wave isolation device comprises a first isolated circuit, a second isolated circuit and a millimeter wave transceiver;
the output end of the first isolated circuit is connected with the input end of the millimeter wave transceiver;
And the output end of the millimeter wave transceiver is connected with the input end of the second isolated circuit.
The invention has the beneficial effects that: the millimeter wave transceiver is used for realizing isolation between the first isolated circuit and the second isolated circuit, millimeter waves are used as a short-distance transmission mode of carrier waves, the bandwidth can reach 200kHz to 20GHz, the transmission speed can reach 100kbps to 10Gbps, the speed is high, the millimeter wave transceiver is applicable to any scene, the millimeter wave carrier antenna is small, wireless transmission can be realized through the antenna, signal isolation can be realized, an optical coupler and an additional isolation layer are not needed, and even if a product is penetrated, the antenna can not cause metal short circuit, so that the signal transmission speed is high, the time delay is small, the efficiency is high, and the security is improved while good isolation is realized.
Drawings
FIG. 1 is a schematic diagram of three common circuits for implementing high-low voltage isolation in the prior art;
Fig. 2 is a schematic structural diagram of a millimeter wave isolation device according to an embodiment of the present invention;
Fig. 3 is a schematic structural diagram of a first circuit of a millimeter wave transceiver in a millimeter wave isolation device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a second circuit of a millimeter wave transceiver in a millimeter wave isolation device according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a first circuit of a millimeter wave isolation device according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a second circuit of a millimeter wave isolation device according to an embodiment of the present invention;
Fig. 7 is a schematic structural diagram of a first implementation of a millimeter wave transceiver chip of a millimeter wave isolation device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a second implementation of a millimeter wave transceiver chip of a millimeter wave isolation device according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a third implementation of a millimeter wave transceiver chip of a millimeter wave isolation device according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a fourth implementation of a millimeter wave transceiver chip of a millimeter wave isolation device according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a millimeter wave isolation device according to an embodiment of the present invention, in which a plurality of millimeter wave transceiver chips are integrated on the same package structure;
Fig. 12 is a schematic structural diagram of a millimeter wave isolation device applied to a high-voltage bridge circuit according to an embodiment of the present invention.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
The millimeter wave isolation device disclosed by the application can be suitable for various circuits needing signal isolation, such as isolation between a low-voltage area circuit and a high-voltage area circuit in a high-voltage circuit; isolation between the control signal circuit and the high-voltage device in the upper bridge and the lower bridge of the high-voltage bridge circuit and isolation between the digital logic control circuit and the feedback loop of the switching power supply are described by the following specific embodiments:
In an alternative embodiment, as shown in fig. 2, a millimeter wave isolation device includes a first isolated circuit and a second isolated circuit, and further includes a millimeter wave transceiver, where in this embodiment, the first isolated circuit is a low voltage region circuit of the high voltage circuit, and the second isolated circuit is a high voltage region circuit of the high voltage circuit;
the output end of the first isolated circuit is connected with the input end of the millimeter wave transceiver;
the output end of the millimeter wave transceiver is connected with the input end of the second isolated circuit;
the millimeter wave transceiver comprises a millimeter wave transmitting circuit, a millimeter wave receiving circuit, a transmitting antenna and a receiving antenna;
The output end of the first isolated circuit is connected with the input end of the millimeter wave transmitting circuit;
The output end of the millimeter wave transmitting circuit is connected with the transmitting antenna;
The input end of the millimeter wave receiving circuit is connected with the receiving antenna;
and the output end of the millimeter wave receiving circuit is connected with the input end of the second isolated circuit.
In another alternative embodiment, as shown in fig. 3, the millimeter wave transmitting circuit includes a digital-to-analog converter, a first baseband amplifier, a first mixer, a first phase-locked loop, and a first radio frequency amplifier and a first filter;
the millimeter wave receiving circuit comprises a second filter, a second radio frequency amplifier, a second mixer, a second phase-locked loop, a second baseband amplifier and an analog-to-digital converter;
the input end of the digital-to-analog converter is connected with the output end of the first isolated circuit, and the output end is connected with the input end of the first baseband amplifier;
The output end of the first baseband amplifier is connected with the first input end of the first mixer;
The second input end of the first mixer is connected with the output end of the first phase-locked loop, and the output end of the first mixer is connected with the input end of the first radio frequency amplifier;
The output end of the first radio frequency amplifier is connected with the input end of the first filter;
the output end of the first filter is connected with the transmitting antenna;
The input end of the second filter is connected with the receiving antenna, and the output end of the second filter is connected with the input end of the second radio frequency amplifier;
The output end of the second radio frequency amplifier is connected with the first input end of the second mixer;
The second input end of the second mixer is connected with the output end of the second phase-locked loop, and the output end of the second mixer is connected with the input end of the second baseband amplifier;
the output end of the second baseband amplifier is connected with the input end of the analog-to-digital converter;
The output end of the analog-to-digital converter is connected with the input end of the second isolated circuit;
In this embodiment, the low-voltage area signal is mixed with the signal provided by the phase-locked loop (Phase locked loop) through digital-to-analog conversion (Digital to Analog), then the signal is sent by pushing the transmitting antenna by the Amplifier (Amplifier), the receiving antenna receives the signal, amplifies the signal by the Amplifier, and finally restores through analog-to-digital conversion (Analog to digital) and enters the high-voltage area.
In another alternative embodiment, as shown in fig. 4, the millimeter wave transmitting circuit includes an oscillator, a modulator, and a third radio frequency amplifier;
the millimeter wave receiving circuit comprises a fourth radio frequency amplifier and an envelope detector;
the output end of the oscillator is connected with the first input end of the modulator;
The second input end of the modulator is connected with the output end of the first isolated circuit, and the output end of the modulator is connected with the input end of the third radio frequency amplifier;
The output end of the third radio frequency amplifier is connected with the transmitting antenna;
The input end of the fourth radio frequency amplifier is connected with the receiving antenna, and the output end of the fourth radio frequency amplifier is connected with the input end of the envelope detector;
the output end of the envelope detector is connected with the input end of the second isolated circuit;
In the embodiment, a low-voltage area signal enters a Modulator (Modulator) to modulate the signal and then is amplified and sent out by a sending antenna, and a receiving antenna receives the signal and then enters a high-voltage area after being amplified and then detected by an envelope detector (Envelope detector);
Fig. 5 and 6 are circuit structures of the two different millimeter wave transmitting circuits applied to the high voltage circuit, in fig. 5, a low voltage area signal is input to an input end of the digital-to-analog converter, an output signal of the analog-to-digital converter is input to the high voltage area circuit, in fig. 6, a low voltage area signal is input to a second input end of the modulator, and an output signal of the envelope detector is input to the high voltage area circuit.
In another alternative embodiment, the millimeter wave transceiver is a millimeter wave transceiver chip;
specifically, the millimeter wave transceiver chip comprises a millimeter wave transmitting chip, a millimeter wave receiving chip, a first substrate, a second substrate and a packaging layer, wherein the first substrate and the second substrate are made of insulating materials;
the first substrate, the second substrate and the packaging layer are sequentially stacked;
Wherein, the thickness of the packaging layer is 300-400 um, and the total thickness of the first substrate and the second substrate is 80-400 um;
The millimeter wave transmitting chip and the millimeter wave receiving chip are arranged in the packaging layer at intervals, and the interval distance is 10 um-1000 kum;
The transmitting antenna and the receiving antenna can be embedded in the chip, so that isolation transmission is realized, the transmitting antenna and the receiving antenna are safe and reliable, and the transmitting antenna and the receiving antenna can be embedded in the chip in various modes:
In an alternative embodiment, as shown in fig. 7, the transmitting antenna M1 and the receiving antenna M2 are disposed in parallel, that is, they form a vertical isolation, where the positional relationship between them is interchangeable;
The transmitting antenna M1 is disposed in the millimeter wave transmitting Chip-TX, the receiving antenna M2 is disposed in the second Substrate (Substrate), specifically, the transmitting antenna M1 is disposed on a side of the millimeter wave transmitting Chip-TX close to the second Substrate, the receiving antenna M2 is disposed on a side of the second Substrate close to the first Substrate, as can be seen from fig. 7, the transmitting antenna M1 and the receiving antenna M2 are in parallel relation, and the grounding unit is disposed in the first Substrate and is disposed on a side of the first Substrate far from the second Substrate; in another alternative embodiment, the transmitting antenna M1 is disposed in the second Substrate, and the receiving antenna M2 is disposed in the millimeter wave receiving Chip-RX;
In another alternative embodiment, one of the transmitting antenna and the receiving antenna is disposed in the encapsulation layer, and the other is disposed in the second substrate;
As shown in fig. 8, the transmitting antenna M1 is disposed on a side of the packaging layer close to the second substrate, the receiving antenna M2 is disposed on a side of the second substrate close to the first substrate, and the grounding unit is disposed in the first substrate and is disposed on a side of the first substrate far from the second substrate, wherein positions between the transmitting antenna M1 and the receiving antenna M2 can be interchanged;
or the transmitting antenna M1 can be arranged on one side of the second substrate close to the first substrate, the receiving antenna M2 can be arranged on one side of the packaging layer close to the second substrate, and the grounding unit is arranged in the first substrate and on one side of the first substrate far from the second substrate;
The arrangement modes of the antennas are all vertical isolated antenna structures, and the millimeter wave frequency is high, so that the antenna size is relatively small, the antenna size is suitable for being designed in a substrate or a chip, one antenna can be designed to be designed as a chip antenna, the other antenna can be designed as a substrate antenna, the transmitting antenna and the receiving antenna can be patch antennas (PATCH ANTENNA), loop antennas (loop antenna), spiral antennas (helix antenna), aperture antennas (aperture antenna), waveguide antennas (waveguide antenna), slot antennas (slot antenna), dual antennas (dipole antenna) or single antenna (monopole antenna), and the substrate is used as an insulating material to realize isolation well; the millimeter wave transceiver chip is realized by the chip, and the antenna can be embedded in the chip, so that the preparation of the millimeter wave transceiver chip can be realized by using a standard CMOS process and a standard packaging process, the cost is low, and the reliability is high.
In another alternative embodiment, a side radiation type antenna architecture mode may also be adopted, and the transmitting antenna and the receiving antenna are horizontally and spaced in the packaging layer;
As shown in fig. 9, the transmitting antenna M1 and the receiving antenna M2 are respectively disposed at intervals on one side of the packaging layer close to the second substrate, and the interval distance is 10 um-100 kum;
in this embodiment, the isolation between M1 and M2 is achieved using the encapsulation layer and the distance between M1 and M2 as insulating materials.
In another alternative embodiment, the millimeter wave transceiver chip includes two separate chip package structures, namely, a millimeter wave transmitting chip and a millimeter wave receiving chip, each of which is of a single package design;
specifically, as shown in fig. 10, two groups of chip package structures are arranged at intervals, and the interval distance is 10 um-100 kum; the millimeter wave transmitting chip is packaged in one chip packaging structure, and the millimeter wave receiving chip is packaged in the other chip packaging structure;
the millimeter wave transmitting chip and the millimeter wave receiving chip are respectively and independently packaged in the packaging layers of the corresponding chip packaging structures;
the transmitting antenna is arranged in the packaging layer of the chip packaging structure where the millimeter wave transmitting chip is located, and particularly, the transmitting antenna is arranged on one side, close to the first substrate, of the packaging layer;
The receiving antenna is arranged in the packaging layer of the chip packaging structure where the millimeter wave receiving chip is located, and particularly, the receiving antenna is arranged on one side, close to the first substrate, of the packaging layer;
in the embodiment, the packaging of the millimeter wave transmitting chip and the millimeter wave receiving chip is realized by adopting a single packaging design mode, so that the cost is lower on one hand, and the isolation effect is better by taking the distance between air and an entity as an insulating layer on the other hand;
In the antenna architecture mode of the side radiation type (endfire), the transmitting antenna and the receiving antenna may be dual antennas (dual antenna), single antennas (monopole antenna), helical antennas (helix antenna), loop antennas (loop antenna), aperture antennas (aperture antenna), waveguide antennas (waveguide antenna), slot antennas (slot antenna) or patch antennas (PATCH ANTENNA);
in an alternative embodiment, multiple chips may be integrated into a single package structure on a product package, as shown in fig. 11, to achieve a better integration design.
In another alternative embodiment, the millimeter wave isolation device may be applied to a high-voltage bridge circuit, as shown in fig. 12, where the first isolated circuit is an upper bridge control signal circuit and a lower bridge control signal circuit in the high-voltage bridge circuit;
The second isolated circuit is a high-voltage device of an upper bridge and a high-voltage device of a lower bridge in the high-voltage bridge circuit;
The signals enter the millimeter wave transmitter and then propagate the signals to the millimeter wave receiver through the antenna, and the millimeter wave receiver sends the signals to the high-voltage devices M3 and M4 to drive the high-voltage devices.
In summary, the millimeter wave isolation device provided by the invention realizes the isolation between the first isolated circuit and the second isolated circuit by means of the millimeter wave transceiver, can be suitable for various signal isolation scenes, such as a high-voltage circuit, a high-voltage bridge circuit, a switching power supply and the like, adopts a short-distance transmission mode of millimeter waves as a carrier wave, has a bandwidth of 200kHz to 20GHz, has a transmission speed of 100kbps to 10Gbps, is fast, can be suitable for any scene, has wide applicability, has a small millimeter wave carrier wave antenna, can be embedded in a millimeter wave chip, can realize wireless transmission by the antenna, can realize signal isolation, can well realize integration by the design of the chip, does not need an optocoupler and an additional isolation layer, can adopt a standard CMOS technology and a standard packaging technology for product generation, has low generation cost, and has the standardized packaging technology which is easy to integrate in consumer products, and even if the products are worn, the antenna can not cause metal short circuit, thereby ensuring the signal transmission speed, time delay and high efficiency and safety.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in the relevant art, are included in the scope of the present invention.
Claims (9)
1. The millimeter wave isolation device comprises a first isolated circuit and a second isolated circuit, and is characterized by further comprising a millimeter wave transceiver;
the output end of the first isolated circuit is connected with the input end of the millimeter wave transceiver;
the output end of the millimeter wave transceiver is connected with the input end of the second isolated circuit;
The millimeter wave transceiver comprises a millimeter wave transmitting circuit, a millimeter wave receiving circuit, a transmitting antenna and a receiving antenna;
The output end of the first isolated circuit is connected with the input end of the millimeter wave transmitting circuit;
The output end of the millimeter wave transmitting circuit is connected with the transmitting antenna;
The input end of the millimeter wave receiving circuit is connected with the receiving antenna;
The output end of the millimeter wave receiving circuit is connected with the input end of the second isolated circuit;
the millimeter wave transceiver is a millimeter wave transceiver chip;
the millimeter wave transceiver chip comprises a first substrate and a second substrate which are sequentially stacked;
The first substrate and the second substrate are made of insulating materials.
2. The millimeter wave isolation device of claim 1 wherein,
The millimeter wave transmitting circuit comprises a digital-to-analog converter, a first baseband amplifier, a first mixer, a first phase-locked loop, a first radio frequency amplifier and a first filter;
the millimeter wave receiving circuit comprises a second filter, a second radio frequency amplifier, a second mixer, a second phase-locked loop, a second baseband amplifier and an analog-to-digital converter;
The input end of the digital-to-analog converter is connected with the output end of the first isolated circuit, and the output end of the digital-to-analog converter is connected with the input end of the first baseband amplifier;
the output end of the first baseband amplifier is connected with the first input end of the first mixer;
The second input end of the first mixer is connected with the output end of the first phase-locked loop, and the output end of the first mixer is connected with the input end of the first radio frequency amplifier;
The output end of the first radio frequency amplifier is connected with the input end of the first filter;
the output end of the first filter is connected with the transmitting antenna;
the input end of the second filter is connected with the receiving antenna, and the output end of the second filter is connected with the input end of the second radio frequency amplifier;
The output end of the second radio frequency amplifier is connected with the first input end of the second mixer;
The second input end of the second mixer is connected with the output end of the second phase-locked loop, and the output end of the second mixer is connected with the input end of the second baseband amplifier;
the output end of the second baseband amplifier is connected with the input end of the analog-to-digital converter;
The output end of the analog-to-digital converter is connected with the input end of the second isolated circuit.
3. The millimeter wave isolation device of claim 1, wherein said millimeter wave transmission circuit comprises an oscillator, a modulator and a third radio frequency amplifier;
the millimeter wave receiving circuit comprises a fourth radio frequency amplifier and an envelope detector;
the output end of the oscillator is connected with the first input end of the modulator;
the second input end of the modulator is connected with the output end of the first isolated circuit, and the output end of the modulator is connected with the input end of the third radio frequency amplifier;
The output end of the third radio frequency amplifier is connected with the transmitting antenna;
The input end of the fourth radio frequency amplifier is connected with the receiving antenna, and the output end of the fourth radio frequency amplifier is connected with the input end of the envelope detector;
the output end of the envelope detector is connected with the input end of the second isolated circuit.
4. The millimeter wave isolation device of claim 1, wherein the millimeter wave transceiver chip further comprises a millimeter wave transmitting chip, a millimeter wave receiving chip, and a packaging layer;
the first substrate, the second substrate and the packaging layer are sequentially stacked;
The millimeter wave transmitting chip and the millimeter wave receiving chip are arranged in the packaging layer at intervals;
the transmitting antenna and the receiving antenna are arranged in parallel;
The transmitting antenna is arranged in the millimeter wave transmitting chip, and the receiving antenna is arranged in the second substrate;
or the transmitting antenna is arranged in the second substrate, and the receiving antenna is arranged in the millimeter wave receiving chip;
or one of the transmitting antenna and the receiving antenna is arranged in the packaging layer, and the other is arranged in the second substrate.
5. The millimeter wave isolation device of claim 4, wherein said transmit antenna and said receive antenna are horizontally and spaced apart in said encapsulation layer.
6. The millimeter wave isolation device of claim 4, wherein said millimeter wave transceiver chip comprises two separate sets of chip package structures;
the two groups of chip packaging structures are arranged at intervals;
the millimeter wave transmitting chip and the millimeter wave receiving chip are respectively and independently packaged in the packaging layers of the corresponding chip packaging structures;
The transmitting antenna is arranged in the packaging layer of the chip packaging structure where the millimeter wave transmitting chip is arranged;
the receiving antenna is arranged in the packaging layer of the chip packaging structure where the millimeter wave receiving chip is arranged.
7. A millimeter wave isolation device according to any of claims 4 to 6, wherein said transmitting antenna and said receiving antenna are patch antennas, loop antennas, helical antennas, aperture antennas, waveguide antennas, slot antennas, single or dual antennas.
8. A millimeter wave isolation device according to any one of claims 1 to 6, wherein said first isolated electrical circuit is a low voltage region electrical circuit of a high voltage electrical circuit and said second isolated electrical circuit is a high voltage region electrical circuit of a high voltage electrical circuit.
9. The millimeter wave isolation device according to any one of claims 1 to 6, wherein the first isolated circuit is a control signal circuit of an upper bridge and a control signal circuit of a lower bridge in a high-voltage bridge circuit; the second isolated circuit is a high-voltage device of a lower bridge and a high-voltage device of a lower bridge in the high-voltage bridge circuit.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211132475.7A CN115378468B (en) | 2022-09-17 | 2022-09-17 | Millimeter wave isolation device |
| TW111139888A TWI864465B (en) | 2022-09-17 | 2022-10-20 | Millimeter wave isolation device |
| JP2022003493U JP3240776U (en) | 2022-09-17 | 2022-10-21 | Millimeter wave separator |
| KR1020220139273A KR102586891B1 (en) | 2022-09-17 | 2022-10-26 | Millimeter-wave isolation device |
| PCT/CN2022/130256 WO2024055399A1 (en) | 2022-09-17 | 2022-11-07 | Millimeter wave isolation device |
| GB2216928.8A GB2622649B (en) | 2022-09-17 | 2022-11-14 | Millimeter-wave isolation device |
| FR2211802A FR3139954B3 (en) | 2022-09-17 | 2022-11-14 | Millimeter wave isolation device |
| DE202022106459.8U DE202022106459U1 (en) | 2022-09-17 | 2022-11-17 | millimeter wave isolation device |
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| CN202211132475.7A CN115378468B (en) | 2022-09-17 | 2022-09-17 | Millimeter wave isolation device |
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| CN115378468B true CN115378468B (en) | 2024-08-06 |
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| KR (1) | KR102586891B1 (en) |
| CN (1) | CN115378468B (en) |
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| CN118399723B (en) * | 2024-07-01 | 2024-08-27 | 德氪微电子(深圳)有限公司 | Gate driving circuit and electronic device |
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| CN218679074U (en) * | 2022-09-17 | 2023-03-21 | 德氪微电子(深圳)有限公司 | Millimeter wave isolating device |
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| EP2652879B1 (en) * | 2010-12-17 | 2018-10-17 | The Regents of The University of California | Periodic near field directors (pnfd) for short range milli-meter-wave-wireless-interconnect (m2w2-interconnect) |
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| CN218679074U (en) * | 2022-09-17 | 2023-03-21 | 德氪微电子(深圳)有限公司 | Millimeter wave isolating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115378468A (en) | 2022-11-22 |
| FR3139954B3 (en) | 2024-11-08 |
| DE202022106459U1 (en) | 2023-01-13 |
| FR3139954A3 (en) | 2024-03-22 |
| JP3240776U (en) | 2023-02-03 |
| TW202414904A (en) | 2024-04-01 |
| KR102586891B1 (en) | 2023-10-11 |
| GB2622649B (en) | 2024-09-04 |
| GB202216928D0 (en) | 2022-12-28 |
| WO2024055399A1 (en) | 2024-03-21 |
| GB2622649A (en) | 2024-03-27 |
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