CN115198279B - Degreasing agent suitable for IC carrier plate flashing method and application thereof - Google Patents
Degreasing agent suitable for IC carrier plate flashing method and application thereof Download PDFInfo
- Publication number
- CN115198279B CN115198279B CN202210960576.7A CN202210960576A CN115198279B CN 115198279 B CN115198279 B CN 115198279B CN 202210960576 A CN202210960576 A CN 202210960576A CN 115198279 B CN115198279 B CN 115198279B
- Authority
- CN
- China
- Prior art keywords
- carrier plate
- surfactant
- mass concentration
- agent suitable
- degreasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000005237 degreasing agent Methods 0.000 title claims abstract description 77
- 239000013527 degreasing agent Substances 0.000 title claims abstract description 75
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000004094 surface-active agent Substances 0.000 claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 31
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims abstract description 31
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 27
- 239000002280 amphoteric surfactant Substances 0.000 claims abstract description 25
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 25
- 230000000149 penetrating effect Effects 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 18
- 239000006260 foam Substances 0.000 claims abstract description 8
- 239000003112 inhibitor Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 61
- 238000005238 degreasing Methods 0.000 claims description 24
- 238000005507 spraying Methods 0.000 claims description 20
- -1 sorbitan ester Chemical class 0.000 claims description 14
- 239000002202 Polyethylene glycol Substances 0.000 claims description 13
- 229920001223 polyethylene glycol Polymers 0.000 claims description 13
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 239000011734 sodium Substances 0.000 claims description 11
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 7
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 claims description 6
- 229920006197 POE laurate Polymers 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 238000004061 bleaching Methods 0.000 claims description 5
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 5
- 229930195729 fatty acid Natural products 0.000 claims description 5
- 239000000194 fatty acid Substances 0.000 claims description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 claims description 5
- HIQIXEFWDLTDED-UHFFFAOYSA-N 4-hydroxy-1-piperidin-4-ylpyrrolidin-2-one Chemical compound O=C1CC(O)CN1C1CCNCC1 HIQIXEFWDLTDED-UHFFFAOYSA-N 0.000 claims description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 4
- 239000003208 petroleum Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 4
- FLHWLBNLXDWNJC-UHFFFAOYSA-N 4,5-dihydroimidazole-1-sulfonic acid Chemical compound OS(=O)(=O)N1CCN=C1 FLHWLBNLXDWNJC-UHFFFAOYSA-N 0.000 claims description 3
- YQEMORVAKMFKLG-UHFFFAOYSA-N glycerine monostearate Natural products CCCCCCCCCCCCCCCCCC(=O)OC(CO)CO YQEMORVAKMFKLG-UHFFFAOYSA-N 0.000 claims description 3
- SVUQHVRAGMNPLW-UHFFFAOYSA-N glycerol monostearate Natural products CCCCCCCCCCCCCCCCC(=O)OCC(O)CO SVUQHVRAGMNPLW-UHFFFAOYSA-N 0.000 claims description 3
- 108700004121 sarkosyl Proteins 0.000 claims description 3
- BACYUWVYYTXETD-UHFFFAOYSA-N N-Lauroylsarcosine Chemical compound CCCCCCCCCCCC(=O)N(C)CC(O)=O BACYUWVYYTXETD-UHFFFAOYSA-N 0.000 claims description 2
- 229940057950 sodium laureth sulfate Drugs 0.000 claims description 2
- SXHLENDCVBIJFO-UHFFFAOYSA-M sodium;2-[2-(2-dodecoxyethoxy)ethoxy]ethyl sulfate Chemical compound [Na+].CCCCCCCCCCCCOCCOCCOCCOS([O-])(=O)=O SXHLENDCVBIJFO-UHFFFAOYSA-M 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 description 182
- 230000000052 comparative effect Effects 0.000 description 133
- 230000000694 effects Effects 0.000 description 79
- 239000000758 substrate Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 description 3
- XOGODJOZAUTXDH-UHFFFAOYSA-M (N-methylanilino)methanesulfonate Chemical compound CN(CS([O-])(=O)=O)c1ccccc1 XOGODJOZAUTXDH-UHFFFAOYSA-M 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 231100000956 nontoxicity Toxicity 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000669 biting effect Effects 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- KSAVQLQVUXSOCR-UHFFFAOYSA-M sodium lauroyl sarcosinate Chemical compound [Na+].CCCCCCCCCCCC(=O)N(C)CC([O-])=O KSAVQLQVUXSOCR-UHFFFAOYSA-M 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940104261 taurate Drugs 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a degreasing agent suitable for an IC carrier plate flashing method and application thereof, and relates to the technical field of printed circuit board production. The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 1-5g/L of sodium persulfate, 2-10g/L of sulfuric acid, 2.5-25% of surfactant, 0.05-1% of copper surface penetrating agent, 0.1-2% of foam inhibitor and the balance of deionized water; the mass ratio of the surfactant to the copper surface penetrating agent is 1: (0.02-0.3); the surfactant is at least one selected from anionic surfactant, nonionic surfactant and amphoteric surfactant. The degreasing agent suitable for the IC carrier plate flashing method can rapidly remove serious finger marks, greasy dirt and deep oxides and improve the quality yield.
Description
Technical Field
The invention relates to the technical field of printed circuit board production, in particular to an oil remover suitable for an IC carrier plate flashing method and application thereof.
Background
At present, the global data center is developed to the characteristics of high speed, large capacity and the like. Under the continuous development of high-speed, high-capacity, cloud computing and high-performance servers, the design requirements of PCBs are also continuously upgraded, such as applications of high-layer numbers, large sizes, high aspect ratios, high-density and high-speed materials, lead-free welding and the like. Conventional integrated circuit (Integrated Circuit, abbreviated as IC) packages employ a leadframe as a carrier for conducting lines of the IC and supporting the IC, with connection pins on either side or around the leadframe, such as double-sided flat-pin packages, quad-sided flat-pin packages, and the like. When the number of pins is not too large, the packaging mode can also meet the requirements. With the development of semiconductor technology, the feature size of ICs is continuously reduced, the integration level is continuously improved, and the corresponding IC package is developed toward ultra-multiple pins, narrow pitch, and microminiaturization, which cannot be satisfied by the conventional lead package. In the last 90 th century, new IC high-density packages such as Ball Grid Array (BGA) packages and chip size packages (Chip Scale Package, CSP) began to appear, and thus IC carrier boards have come to be in the trend.
The IC carrier board has wide application field. The main stream package substrate products are divided into five types, namely a memory chip package substrate, a micro-electro-mechanical system package substrate, a radio frequency module package substrate, a processor chip package substrate and a high-speed communication package substrate, and the chips have basically adopted substrate package schemes due to high integration level, so that the proportion of other chips adopting an IC carrier plate is higher and higher along with the continuous improvement of the IC integration level.
Because the IC carrier has the characteristics of high density, high precision, miniaturization, thinning and the like, the line width/line distance is smaller, the circuit is fine, and the quality yield generally reaches 70 percent, which is a very good result. Therefore, a degreasing agent with good degreasing effect is needed to clean fingerprints, greasy dirt, deep oxides, burrs and the like on the surface of the plate and the circuit, so that the problems of open circuit, short circuit, copper residue, notch and the like of an etching process caused by poor degreasing effect are solved.
Among the degreasing agents used by circuit board manufacturers at present, the acid degreasing agent has weak degreasing capability and can only remove slight oxidation of the copper surface of the circuit board, but has no capability for finger marks, serious oxidation and serious pollutants. The alkaline degreasing agent has strong degreasing capability, but the alkaline degreasing agent is easy to attack green oil and circuits, so that the green oil and the fine circuits fall off, and the residual liquid medicine on the copper surface is difficult to clean, so that the copper surface is oxidized. Therefore, how to clean copper surfaces, remove serious finger marks, greasy dirt, oxides, burrs and the like in the production process of the IC carrier plate, avoid damaging green oil and circuits, and improve the quality yield is one of the key steps of the production process of the IC carrier plate.
Disclosure of Invention
In order to solve the technical problems, the invention provides an oil remover suitable for an IC carrier plate flashing method and application thereof. The method specifically comprises the following technical scheme:
in a first aspect, a degreasing agent suitable for an IC carrier plate flashing method is provided, including the following components in mass concentration:
1-5g/L of sodium persulfate,
2-10g/L of sulfuric acid,
2.5% -25% of surfactant,
0.05 to 1 percent of copper surface penetrating agent,
0.1 to 2 percent of foam inhibitor,
the balance of deionized water;
the mass ratio of the surfactant to the copper surface penetrating agent is 1: (0.02-0.3);
the surfactant is at least one selected from anionic surfactant, nonionic surfactant and amphoteric surfactant; the copper surface penetrating agent is at least one selected from isomerism dodecanol, pancreatic bleaching T, isopropyl myristate and sodium alkyl succinate sulfonate; the foam inhibitor is at least one selected from polyethylene glycol monostearate, glycerol monostearate and sorbitan ester.
Further, the degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration:
1.5-4.5g/L sodium persulfate,
3-8g/L of sulfuric acid,
1 to 10 percent of anionic surfactant,
0.5 to 5 percent of nonionic surfactant,
1 to 10 percent of amphoteric surfactant,
0.2 to 0.8 percent of copper surface penetrating agent,
0.5 to 1.5 percent of foam inhibitor,
the balance of deionized water;
the anionic surfactant is at least one selected from N, N-oleoyl bis (taurine) sodium, sodium lauryl sulfate and sodium laureth sulfate; the nonionic surfactant is at least one selected from polyoxyethylene laurate, polyethylene glycol fatty acid ester and phenyl petroleum sulfonate; the amphoteric surfactant is at least one selected from 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 2-alkyl-N-hydroxyethyl-N-hydroxypropyl sulfoimidazoline and N-lauroyl sarcosine sodium.
Further, the mass ratio of the anionic surfactant to the nonionic surfactant to the amphoteric surfactant is 1: (0.1-2.5): (0.2-10).
Further, the mass concentration of the anionic surfactant is 4-6%, the mass concentration of the nonionic surfactant is 2-3%, and the mass concentration of the amphoteric surfactant is 4-6%.
Further, the mass concentration of the copper surface penetrating agent is 0.4-0.6%.
Further, the mass concentration of the sodium persulfate is 2-4g/L, and the mass concentration of the sulfuric acid is 4-6g/L.
Further, the mass concentration of the foam inhibitor is 0.8-1.2%.
In a second aspect, a method for removing oil of an oil removing agent suitable for an IC carrier plate flashing method is provided, the oil removing agent suitable for the IC carrier plate flashing method in the first aspect is prepared into a solution with the mass concentration of 3-5%, and the IC carrier plate is removed under the condition that the solution temperature is 20-40 ℃ and the automatic adding amount is 0.8-1.2L/100 square meters by adopting a soaking or spraying mode, wherein the oil removing time is 0.5-5min.
Further, the spraying pressure of the spraying mode is 1.5-2.5kg/cm 2 The temperature of the solution is 25-35 ℃.
Further, the line width/line distance of the IC carrier plate is 10 μm/10 μm-50 μm/50 μm.
The invention has the beneficial effects that: the deoiling agent suitable for IC carrier plate flash etching process contains sulfuric acid and sodium persulfate as microetching liquid components and surfactant and penetrant with powerful detergency and their interaction. Hydrophilic groups of the non-anionic-zwitterionic surfactant with good dirt removing performance have lower interfacial tension. Can be well spread, moistened and permeated on the surfaces of severe fingerprints, greasy dirt and oxides, reduce interfacial tension, reduce the adhesion force of the surfaces of oil dirt, metals and other matrixes, and further strip the fingerprints, the greasy dirt, the oxides and the like. The oil stain enters the degreasing agent and is emulsified with water in the degreasing agent, so that repeated adhesion of the oil stain is avoided. Meanwhile, sodium persulfate and sulfuric acid in the oil removing agent have slight biting effect, so that the dissolution effect of the surfactant on oil stains is effectively improved. The degreasing agent solution suitable for the IC carrier plate production process can process fine circuits with line width/line distance within the range of 10 mu m/10 mu m-50 mu m/50 mu m, and has the advantages of high stability of liquid medicine in the production process, simple operation, low cost and long solution storage time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a graph showing the effect of the beaker according to example 1 of the present invention before testing;
FIG. 2 is a graph showing the effect of the beaker test of example 1 of the present invention;
FIG. 3 is a graph showing the effect of the beaker of example 2 of the present invention before testing;
FIG. 4 is a graph showing the effect of the beaker test in example 2 of the present invention;
FIG. 5 is a graph showing the effect of example 3 of the present invention before beaker test;
FIG. 6 is a graph showing the effect of the beaker test in example 3 of the present invention;
FIG. 7 is a graph showing the effect of example 4 of the present invention before beaker test;
FIG. 8 is a graph showing the effect of the beaker test in example 4 of the present invention;
FIG. 9 is a graph showing the effect of example 5 of the present invention before beaker test;
FIG. 10 is a graph showing the effect of the beaker test of example 5 of the present invention;
FIG. 11 is a graph showing the effect of the beaker of example 6 of the present invention before testing;
FIG. 12 is a graph showing the effect of the beaker test in example 6 of the present invention;
FIG. 13 is a graph showing the effect of the beaker of example 7 of the present invention before testing;
FIG. 14 is a graph showing the effect of the beaker test in example 7 of the present invention;
FIG. 15 is a graph showing the effect of the beaker of example 8 of the present invention before testing;
FIG. 16 is a graph showing the effect of the beaker test in example 8 of the present invention;
FIG. 17 is a graph showing the effect of the invention of comparative example 7 before the beaker test;
FIG. 18 is a graph showing the effect of the beaker test of comparative example 7 of the present invention;
FIG. 19 is a graph showing the effect of the invention of comparative example 11 before the beaker test;
FIG. 20 is a graph showing the effect of the beaker test of comparative example 11 of the present invention;
FIG. 21 is a graph showing the effect of the invention of comparative example 16 prior to beaker test;
FIG. 22 is a graph showing the effect of the invention after beaker test of comparative example 16;
FIG. 23 is a graph showing the effect of the invention of comparative example 19 before beaker test;
FIG. 24 is a graph showing the effect of the invention after beaker test of comparative example 19;
FIG. 25 is a graph showing the effect of the comparative example 34 of the present invention before the beaker test;
FIG. 26 is a graph showing the effect of the comparative example 34 of the present invention after beaker test;
FIG. 27 is a graph showing the effect of the invention of comparative example 35 before testing in a beaker;
FIG. 28 is a graph showing the effect of the comparative example 35 of the present invention after the beaker test;
FIG. 29 is a graph showing the effect of the invention of comparative example 36 prior to beaker test;
FIG. 30 is a graph showing the effect of the invention after beaker test of comparative example 36;
FIG. 31 is a graph showing the effect of the invention of comparative example 37 before testing in a beaker;
FIG. 32 is a graph showing the effect of the invention in comparative example 37 after beaker test;
FIG. 33 is a graph showing the effect of the blank example of the present invention before beaker test;
fig. 34 is a graph showing the effect of the blank example of the present invention after beaker test.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely, and it is apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
In order to more fully understand the technical content of the present invention, the following description and description of the technical solution of the present invention will be further presented with reference to specific embodiments.
The preparation method of the degreasing agent suitable for the IC carrier plate flashing method comprises the following steps:
and weighing sodium persulfate, sulfuric acid, an anionic surfactant, a nonionic surfactant, an amphoteric surfactant, a copper surface penetrating agent, a foam inhibitor and deionized water according to the required proportion, mixing, and uniformly stirring for 20-60min to obtain the oil remover suitable for the IC carrier plate flash etching method.
The degreasing method of the degreasing agent suitable for the IC carrier plate flashing method comprises the following steps:
the degreasing method of the degreasing agent suitable for the IC carrier plate flashing method comprises the following steps: s1, upper plate; s2, oil removal; s3, washing with water; s4, flashing and etching; s5, washing with water; s6, drying; s7, lower plate; s8, inserting a frame.
Wherein, the degreasing step is as follows: preparing a solution with the mass concentration of 3-5% by using an oil removing agent suitable for an IC carrier plate flashing method, and removing oil from the IC carrier plate by adopting a soaking or spraying mode under the condition that the temperature of the solution is 20-40 ℃ and the automatic addition amount is 0.8-1.2L/100 square meters, wherein the oil removing time is 0.5-5min.
Specifically, the spraying pressure of the spraying mode is 1.5-2.5kg/cm 2 。
Preferably, the temperature of the solution is 25-35 ℃.
Specifically, the line width/line distance of the IC carrier plate is 10 μm/10 μm-50 μm/50 μm.
Deoiling agent effect verification test suitable for IC carrier plate flashing method
1) Beaker test: respectively taking a degreasing agent suitable for an IC carrier plate flashing method, and correspondingly preparing 500ml of bath liquid with the mass concentration of the degreasing agent of 10-12% in a beaker; stirring and heating the bath solution in each beaker to 30 ℃; and (3) respectively placing the copper plates with the serious fingerprints, greasy dirt and oxidized IC carrier plates into the beakers corresponding to the bath liquid, wherein the soaking time is 3min, and recording the removal effects of the serious fingerprints, the greasy dirt and the oxide.
2) Etching test: the IC carrier was tested for normal etching in a flash line, each production 10pnl.
Example 1
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 4g/L sodium persulfate, 6g/L sulfuric acid, 4% N, N-oleoyl bis-taurine sodium, 2% polyoxyethylene laurate, 4% 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.4% isomeric dodecanol, 0.8% polyethylene glycol monostearate and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 3%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the spraying pressure is 2.0kg/cm < 2 >, the degreasing time is 2min and the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 10um/10um, and the printed circuit board is obtained after degreasing, and is the example 1.
Example 2
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 3g/L sodium persulfate, 4g/L sulfuric acid, 5% sodium lauryl sulfate, 2.5% polyethylene glycol fatty acid ester, 5% 2-alkyl-N-hydroxyethyl-N-hydroxypropyl sulfoimidazoline, 0.4% pancreatic bleach T, 0.8% glycerol monostearate, and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 4%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the soaking time is 3min, the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 20um/20um, and the printed circuit board is obtained after degreasing, which is the example 2.
Example 3
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 4g/L sodium persulfate, 4g/L sulfuric acid, 4% sodium lauryl sulfate, 2% phenyl petroleum sulfonate, 4% sodium N-lauroyl sarcosinate, 0.4% isopropyl myristate, 0.8% sorbitan ester and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 5%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the spraying pressure is 1.5kg/cm < 2 >, the degreasing time is 1.5min and the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 300um/30um, and the printed wiring board is obtained after degreasing, and is the example 3.
Example 4
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 3g/L of sodium persulfate, 5g/L of sulfuric acid, 6% of sodium dodecyl polyoxyethylene ether sulfate, 3% of polyoxyethylene laurate, 6% of 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.5% of isomeric dodecanol, 1.2% of polyethylene glycol monostearate and the balance of deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 4%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the spraying pressure is 2.5kg/cm < 2 >, the degreasing time is 3min and the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 20um/20um, and the printed circuit board is obtained after degreasing, and is the example 4.
Example 5
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 2g/L sodium persulfate, 5g/L sulfuric acid, 4% N, N-oleoyl bis-taurate sodium, 2% phenyl petroleum sulfonate, 4% 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.6% sodium alkyl succinate sulfonate, 0.8% polyethylene glycol monostearate, and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 5%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the soaking time is 4min, the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 40um/40um, and the printed circuit board is obtained after degreasing, which is the example 5.
Example 6
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 4g/L sodium persulfate, 6g/L sulfuric acid, 5% sodium dodecyl polyoxyethylene ether sulfate, 2.5% polyoxyethylene laurate, 5% 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.4% isopropyl myristate, 1.0% polyethylene glycol monostearate and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 4%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the spraying pressure is 1.5kg/cm < 2 >, the degreasing time is 3min and the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 20um/20um, and the printed circuit board is obtained after degreasing, and is the example 6.
Example 7
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 4g/L sodium persulfate, 6g/L sulfuric acid, 6% N, N-oleoyl bis (taurine) sodium, 3% polyethylene glycol fatty acid ester, 6% 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.5% pancreatic bleaching T, 1.2% polyethylene glycol monostearate and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 4%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the spraying pressure is 2.5kg/cm < 2 >, the degreasing time is 2min and the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 10um/10um, and the printed circuit board is obtained after degreasing, and is the example 7.
Example 8
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 3g/L sodium persulfate, 6g/L sulfuric acid, 4% sodium dodecyl polyoxyethylene ether sulfate, 2% polyoxyethylene laurate, 4% 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 0.6% sodium alkyl succinate sulfonate, 0.8% polyethylene glycol monostearate and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 3%, the IC carrier plate is degreased under the conditions that the solution temperature is 25 ℃, the soaking time is 5min, the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 50um/50um, and the printed circuit board is obtained after degreasing, which is the example 8.
Beaker tests were performed on degreasing agents suitable for the IC carrier plate flash method of examples 1-8, and the test results are shown in table 1:
table 1 beaker test results for examples 1-8
Wherein, fig. 1 is an effect graph before the beaker test of example 1, and fig. 2 is an effect graph after the beaker test of example 1; fig. 3 is a graph showing effects before the beaker test of example 2, and fig. 4 is a graph showing effects after the beaker test of example 2; fig. 5 is a graph showing effects before the beaker test of example 3, and fig. 6 is a graph showing effects after the beaker test of example 3; fig. 7 is a graph showing effects before the beaker test of example 4, and fig. 8 is a graph showing effects after the beaker test of example 4; fig. 9 is a graph showing effects before the beaker test of example 5, and fig. 10 is a graph showing effects after the beaker test of example 5; fig. 11 is a graph showing effects before the beaker test of example 6, and fig. 12 is a graph showing effects after the beaker test of example 6; fig. 13 is an effect graph before the beaker test of example 7, and fig. 14 is an effect graph after the beaker test of example 7; fig. 15 is a graph showing effects before the beaker test of example 8, and fig. 16 is a graph showing effects after the beaker test of example 8.
The IC carriers of examples 1-8 were tested for normal etching in a flash line, each 10 and pnl, and the test results are shown in table 2:
TABLE 2 etching test results for examples 1-8
From the test results in tables 1-2, the degreasing agent suitable for the IC carrier plate flashing method provided by the invention has the advantages of simple proportioning, convenient operation, no toxicity or harm, no other side effects and low economic cost from the aspects of proportioning and application. The degreasing agent suitable for the IC carrier plate flashing method has obvious effect of improving the quality yield of flashing, and the total yield reaches more than 90%.
1. Based on the influence of different mass concentrations of sodium persulfate
Comparative examples 1 to 3 differ from example 1 in the mass concentration of sodium persulfate, and the other conditions were the same. Beaker test and etching test were performed on example 1 and comparative examples 1 to 3, respectively, and the test results are shown in tables 3 to 4:
TABLE 3 beaker test results for example 1, comparative examples 1-3
TABLE 4 etching test results for example 1, comparative examples 1-3
As can be seen from the test results in tables 3-4, sodium persulfate (comparative example 1) was not added to the degreasing agent suitable for the IC carrier flash etching method, and the beaker test results were not ideal and the etching test results were poor. The mass concentration of sodium persulfate was lower than 2g/L (comparative example 2) or higher than 10g/L (comparative example 3), the beaker test results were not ideal, and the etching test results were poor. Therefore, the mass concentration of sodium persulfate in the degreasing agent suitable for the IC carrier plate flashing method is preferably 2-10g/L.
2. Based on the influence of different mass concentrations of sulfuric acid
Comparative examples 4 to 6 differ from example 1 in the mass concentration of sulfuric acid, and the other conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 4 to 6, respectively, and the test results are shown in tables 5 to 6:
table 5 beaker test results of example 1, comparative examples 4-6
TABLE 6 etching test results for example 1, comparative examples 4-6
As can be seen from the test results in tables 5-6, the degreasing agent suitable for the IC carrier plate flash etching method is not added with sulfuric acid (comparative example 4), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of sulfuric acid was lower than 1 g/L (comparative example 5) or higher than 5g/L (comparative example 6), the beaker test results were not ideal, and the etching test results were poor. Therefore, the mass concentration of sulfuric acid in the degreasing agent suitable for the IC carrier plate flashing method is preferably 1-5g/L.
3. Based on the influence of sodium persulfate and sulfuric acid combinations
Comparative example 1 differs from example 1 in that sodium persulfate was not contained, and the other conditions were the same. Comparative example 4 differs from example 1 in that sulfuric acid is not contained and the remaining conditions are the same. Comparative example 7 differs from example 1 in that sodium persulfate and sulfuric acid are not contained, and the remaining conditions are the same. Beaker test and etching test were performed on example 1, comparative example 4, comparative example 7, respectively, and the test results are shown in tables 7 to 8:
table 7 beaker test results of example 1, comparative example 4, comparative example 7
Table 8 etching test results of example 1, comparative example 4, comparative example 7
Fig. 17 is a graph showing the effect of comparative example 7 before the beaker test, and fig. 18 is a graph showing the effect of comparative example 7 after the beaker test. As can be seen from the test results in tables 7 to 8, when sodium persulfate (comparative example 1), sulfuric acid (comparative example 4) or sodium persulfate and sulfuric acid (comparative example 7) are not added to the degreasing agent suitable for the IC carrier plate flash etching method, problems such as open circuit, short circuit and notch of the circuit board occur due to non-ideal beaker test results and etching test results. Among them, the test results of the various components (comparative example 7) in the absence of sodium persulfate and sulfuric acid were worse than those in the absence of the single components (comparative example 1, comparative example 4).
4. Effects of different mass concentrations based on surfactant
Comparative examples 8 to 10 differ from example 1 in the mass concentration of the surfactant, and the remaining conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 8 to 10, respectively, and the test results are shown in tables 9 to 10:
table 9 beaker test results of example 1, comparative examples 8-10
TABLE 10 etching test results for example 1, comparative examples 8-10
As can be seen from the test results in tables 9-10, the degreasing agent suitable for the IC carrier plate flash etching method does not add a surfactant (comparative example 8), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of surfactant was less than 2.5% (comparative example 9) or greater than 25% (comparative example 10), and the beaker test results were not ideal and the etching test results were poor. Therefore, the mass concentration of the surfactant in the degreasing agent suitable for the IC carrier plate flashing method is preferably 2.5% -25%.
5. Influence of different mass concentrations based on copper surface penetrants
Comparative examples 11 to 13 differ from example 1 in the mass concentration of the copper face penetrating agent, and the other conditions were the same. Beaker test and etching test were performed on example 1 and comparative examples 11 to 13, respectively, and the test results are shown in tables 11 to 12:
table 11 beaker test results of example 1, comparative examples 11-13
TABLE 12 etching test results for example 1, comparative examples 11-13
Fig. 19 is a graph showing the effect of comparative example 11 before the beaker test, and fig. 20 is a graph showing the effect of comparative example 11 after the beaker test. As can be seen from the test results in tables 11-12, the degreasing agent suitable for the IC carrier plate flash etching method does not contain copper surface penetrating agent (comparative example 11), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of the copper surface penetrating agent is lower than 0.05 percent (comparative example 12) or higher than 1 percent (comparative example 13), and the beaker test result is not ideal and the etching test result is poor. Therefore, the mass concentration of the copper surface penetrating agent in the degreasing agent suitable for the IC carrier plate flashing method is preferably 0.05% -1%.
6. Based on the influence of different mass ratios of surfactant to copper surface penetrant
Comparative examples 14 to 15 differ from example 1 in the mass ratio of surfactant to copper surface penetrant, the remaining conditions being the same. Beaker test and etching test were performed on example 1 and comparative examples 14 to 15, respectively, and the test results are shown in tables 13 to 14:
table 13 beaker test results of example 1, comparative examples 14 to 15
TABLE 14 etching test results for example 1, comparative examples 14-15
As can be seen from the test results in tables 13 to 14, when the ratio of the surface penetrating agent in the mass ratio of the surface active agent to the copper penetrating agent in the degreasing agent suitable for the IC carrier plate flashing method is relatively small (comparative example 14) or the ratio of the surface penetrating agent in the mass ratio of the surface active agent to the copper penetrating agent is relatively large (comparative example 15), the beaker test result is not ideal and the etching test result is poor. Therefore, the mass ratio of the surfactant in the degreasing agent and the copper surface penetrating agent suitable for the IC carrier plate flashing method is preferably 1: (0.02-0.3).
7. Based on the influence of different mass concentrations of anionic surfactant in the surfactant
Comparative examples 16 to 18 differ from example 1 in the mass concentration of the anionic surfactant in the surfactant, and the other conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 16 to 18, respectively, and the test results are shown in tables 15 to 16:
table 15 beaker test results of example 1, comparative examples 16-18
TABLE 16 etching test results for example 1, comparative examples 16-18
Fig. 21 is a graph showing effects before the beaker test of comparative example 16, and fig. 22 is a graph showing effects after the beaker test of comparative example 16. As can be seen from the test results in tables 15-16, the surfactant in the degreasing agent suitable for the IC carrier flash etching method does not add an anionic surfactant (comparative example 16), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of anionic surfactant was less than 1% (comparative example 16) or more than 10% (comparative example 17), and the beaker test results were not ideal and the etching test results were poor. Therefore, the mass concentration of the anionic surfactant in the degreasing agent suitable for the IC carrier plate flashing method is preferably 1% -10%.
8. Based on the influence of different mass concentrations of nonionic surfactant in the surfactant
Comparative examples 19 to 21 differ from example 1 in the mass concentration of the nonionic surfactant in the surfactant, and the other conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 19 to 21, respectively, and the test results are shown in tables 17 to 18:
table 17 beaker test results of example 1, comparative examples 19 to 21
TABLE 18 etching test results for example 1, comparative examples 19-21
Fig. 23 is a graph showing the effect of comparative example 19 before the beaker test, and fig. 24 is a graph showing the effect of comparative example 19 after the beaker test. As can be seen from the test results in tables 17-18, the surfactant in the degreasing agent suitable for the IC carrier flash etching method does not add a nonionic surfactant (comparative example 19), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of nonionic surfactant was 0.5% lower (comparative example 20) or higher (comparative example 21), and the beaker test results were not ideal and the etching test results were poor. Therefore, the mass concentration of the nonionic surfactant in the degreasing agent suitable for the IC carrier plate flashing method is preferably 0.5-5%.
9. Based on the influence of different mass concentrations of amphoteric surfactant in the surfactant
Comparative examples 22 to 24 differ from example 1 in the mass concentration of the amphoteric surfactant in the surfactant, and the other conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 22 to 24, respectively, and the test results are shown in tables 19 to 20:
table 19 beaker test results of example 1, comparative examples 22-24
TABLE 20 etching test results for example 1, comparative examples 22-24
As can be seen from the test results in tables 19-20, the surfactant in the degreasing agent suitable for the IC carrier plate flash etching method does not add amphoteric surfactant (comparative example 22), and the beaker test results are not ideal and the etching test results are poor. The mass concentration of the amphoteric surfactant was 1% (comparative example 23) or higher than 10% (comparative example 24), and the beaker test results were not ideal and the etching test results were poor. Therefore, the mass concentration of the amphoteric surfactant in the degreasing agent suitable for the IC carrier plate flashing method is preferably 1% -10%.
10. Based on the influence of different mass ratios of anionic surfactant to nonionic surfactant and amphoteric surfactant in the surfactant
Comparative example 25 differs from example 1 in that it does not contain an anionic surfactant and a nonionic surfactant, and the remaining conditions are the same. Comparative example 26 differs from example 1 in that no nonionic surfactant and no amphoteric surfactant are contained, and the remaining conditions are the same. Comparative examples 27 to 30 differ from example 1 in the different mass ratios of anionic surfactant to nonionic surfactant and amphoteric surfactant in the surfactant, and the remaining conditions are the same. Beaker test and etching test were performed on example 1 and comparative examples 25 to 30, respectively, and the test results are shown in tables 21 to 22:
table 21 beaker test results of example 1, comparative examples 25 to 30
Table 22 etching test results of example 1, comparative examples 25 to 30
As is clear from the test results in tables 21 to 22, when the surfactant is not added with the anionic surfactant and the nonionic surfactant (comparative example 25) and the surfactant is not added with the nonionic surfactant and the amphoteric surfactant (comparative example 26), the beaker test results are not ideal and the etching test results are poor in the degreasing agent suitable for the IC carrier plate flash etching method. The mass ratio of anionic surfactant to nonionic surfactant, amphoteric surfactant is smaller (comparative example 27) or the mass ratio of anionic surfactant to nonionic surfactant, amphoteric surfactant is larger (comparative example 28) or the mass ratio of anionic surfactant to nonionic surfactant, amphoteric surfactant is smaller (comparative example 29) or the mass ratio of anionic surfactant to nonionic surfactant, amphoteric surfactant is larger (comparative example 30), the beaker test result is not ideal, and the etching test result is poor. Therefore, the mass ratio of the anionic surfactant to the nonionic surfactant to the amphoteric surfactant in the degreasing agent suitable for the IC carrier plate flashing method is preferably 1: (0.1-2.5): (0.2-10).
11. Based on the effect of synergism between the components of the degreasing agent
Comparative example 31
Comparative example 31 differs from example 1 in that no suds suppressors were included, with the remaining conditions being the same.
Comparative example 32
Comparative example 32 differs from example 1 in that it does not contain a surfactant and a copper face penetrating agent, and the remaining conditions are the same.
Comparative example 33
Comparative example 33 differs from example 1 in that sodium persulfate, sulfuric acid, surfactant and copper face penetrating agent are not contained, and the remaining conditions are the same.
Comparative example 34
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 3g/L sodium persulfate, 0.6% sodium alkyl succinate sulfonate and the balance deionized water.
Preparing the degreasing agent suitable for the IC carrier plate flashing method into a solution with the mass concentration of 3%, and spraying at the temperature of 25 ℃ and the spraying pressure of 2.0kg/cm 2 The oil removal is carried out under the conditions that the oil removal time is 3min and the automatic addition amount is 1L/100 square meter, the line width/line distance of the IC carrier plate is 20um/20um, and the printed wiring board is obtained after the oil removal as a comparative example 34.
Comparative example 35
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 6g/L sulfuric acid, 3% polyethylene glycol fatty acid ester and the balance deionized water.
Preparing the degreasing agent suitable for the IC carrier plate flashing method into a solution with the mass concentration of 4%, and spraying at the temperature of 25 ℃ and the spraying pressure of 1.5kg/cm 2 The oil removal time is 2min, and the automatic addition amount is 1L/100LDeoiling is carried out under the condition of meter, the line width/line distance of the IC carrier plate is 30um/30um, and the printed wiring board is obtained after deoiling as comparative example 35.
Comparative example 36
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 6% of N, N-oleoyl bis (taurine) sodium, 0.5% of pancreatic bleaching T and the balance of deionized water.
Preparing the degreasing agent suitable for the IC carrier plate flashing method into a solution with the mass concentration of 5%, and spraying at the temperature of 25 ℃ and the spraying pressure of 1.5kg/cm 2 The oil removal is carried out under the conditions that the oil removal time is 3min and the automatic addition amount is 1L/100 square meter, the line width/line distance of the IC carrier plate is 30um/30um, and the printed wiring board is obtained after the oil removal as a comparative example 36.
Comparative example 37
The degreasing agent suitable for the IC carrier plate flashing method comprises the following components in mass concentration: 4g/L sodium persulfate, 0.5% pancreatic bleaching T and the balance deionized water.
The degreasing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 3%, the degreasing is carried out under the conditions that the solution temperature is 25 ℃, the soaking time is 4min, the automatic addition amount is 1L/100 square meters, the line width/line distance of the IC carrier plate is 40um/40um, and the printed circuit board is obtained after the degreasing as a comparative example 37.
Blank examples
Blank example the blank example differs from example 1 in that the only component in the degreasing agent suitable for the IC carrier plate flash etching method is deionized water, and the rest conditions are the same.
Beaker test and etching test were performed on example 1, comparative examples 31 to 37, and blank examples, respectively, and the test results are shown in tables 23 to 24:
table 23 beaker test results for example 1, comparative examples 31-37, blank examples
TABLE 24 etching test results for example 1, comparative examples 31-37, blank examples
Fig. 25 is a graph showing effects before the beaker test of comparative example 34, and fig. 26 is a graph showing effects after the beaker test of comparative example 34. Fig. 27 is a graph showing the effect of comparative example 35 before the beaker test, and fig. 28 is a graph showing the effect of comparative example 35 after the beaker test. Fig. 29 is a graph showing the effect of comparative example 36 before the beaker test, and fig. 30 is a graph showing the effect of comparative example 36 after the beaker test. Fig. 31 is a graph showing the effect of comparative example 37 before the beaker test, and fig. 32 is a graph showing the effect of comparative example 37 after the beaker test. Fig. 33 is an effect diagram before the beaker test of the blank example, and fig. 34 is an effect diagram after the beaker test of the blank example.
As can be seen from the test results in tables 23-24, the lack of a single component or multiple components in the degreasing agent suitable for the IC carrier plate flash etching method can lead to non-ideal beaker test results and poor etching test results. Among them, the lack of various components (comparative example 32-comparative example 37, blank) was worse than the lack of a single component (comparative example 31), and problems such as open circuit, short circuit and chipping of the wiring board were more serious.
In summary, the degreasing agent suitable for the IC carrier plate flashing method provided by the invention has the advantages of simple proportioning, convenient operation, no toxicity and harm, no other side effects and low economic cost from the aspects of proportioning and application. The degreasing agent suitable for the IC carrier plate flashing method has obvious effect of improving the quality yield of flashing, and the yield is improved to more than 90% from 70% in the industry.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (9)
1. The degreasing agent suitable for the IC carrier plate flashing method is characterized by comprising the following components in mass concentration:
1.5-4.5g/L sodium persulfate,
3-8g/L of sulfuric acid,
2.5% -25% of surfactant,
0.2 to 0.8 percent of copper surface penetrating agent,
0.5 to 1.5 percent of foam inhibitor,
the balance of deionized water;
the mass ratio of the surfactant to the copper surface penetrating agent is 1: (0.02-0.3);
the surfactant consists of 1-10% of anionic surfactant, 0.5-5% of nonionic surfactant and 1-10% of amphoteric surfactant; the copper surface penetrating agent is at least one selected from isomerism dodecanol, pancreatic bleaching T, isopropyl myristate and sodium alkyl succinate sulfonate; the foam inhibitor is at least one selected from polyethylene glycol monostearate, glycerol monostearate and sorbitan ester;
the anionic surfactant is at least one selected from N, N-oleoyl bis (taurine) sodium, sodium lauryl sulfate and sodium laureth sulfate; the nonionic surfactant is at least one selected from polyoxyethylene laurate, polyethylene glycol fatty acid ester and phenyl petroleum sulfonate; the amphoteric surfactant is at least one selected from 2-lauryl-N-carboxymethyl-N-hydroxyethyl imidazoline, 2-alkyl-N-hydroxyethyl-N-hydroxypropyl sulfoimidazoline and N-lauroyl sarcosine sodium.
2. The degreasing agent suitable for the IC carrier plate flashing method according to claim 1, wherein the mass ratio of the anionic surfactant to the nonionic surfactant to the amphoteric surfactant is 1: (0.1-2.5): (0.2-10).
3. The degreasing agent for the IC carrier plate flash etching method according to claim 2, wherein the mass concentration of the anionic surfactant is 4-6%, the mass concentration of the nonionic surfactant is 2-3%, and the mass concentration of the amphoteric surfactant is 4-6%.
4. The degreasing agent suitable for the IC carrier plate flashing method according to claim 3, wherein the mass concentration of the copper surface penetrating agent is 0.4-0.6%.
5. The degreasing agent suitable for the IC carrier plate flashing method according to claim 4, wherein the mass concentration of sodium persulfate is 2-4g/L, and the mass concentration of sulfuric acid is 4-6g/L.
6. The degreasing agent suitable for the IC carrier plate flashing method of claim 5, wherein the mass concentration of the suds suppressor is 0.8-1.2%.
7. The oil removing method of the oil removing agent suitable for the IC carrier plate flashing method is characterized in that the oil removing agent suitable for the IC carrier plate flashing method is prepared into a solution with the mass concentration of 3-5%, and the IC carrier plate is subjected to oil removing by adopting a soaking or spraying mode under the condition that the temperature of the solution is 20-40 ℃ and the automatic addition amount is 0.8-1.2L/100 square meters, and the oil removing time is 0.5-5min.
8. The degreasing method as claimed in claim 7, wherein the spraying pressure of the spraying means is 1.5-2.5kg/cm 2 The temperature of the solution is 25-35 ℃.
9. The degreasing method of claim 8, wherein the IC carrier has a line width/line pitch of 10 μm/10 μm-50 μm/50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210960576.7A CN115198279B (en) | 2022-08-11 | 2022-08-11 | Degreasing agent suitable for IC carrier plate flashing method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210960576.7A CN115198279B (en) | 2022-08-11 | 2022-08-11 | Degreasing agent suitable for IC carrier plate flashing method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115198279A CN115198279A (en) | 2022-10-18 |
| CN115198279B true CN115198279B (en) | 2023-09-19 |
Family
ID=83585460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210960576.7A Active CN115198279B (en) | 2022-08-11 | 2022-08-11 | Degreasing agent suitable for IC carrier plate flashing method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115198279B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115976529A (en) * | 2022-12-07 | 2023-04-18 | 立邦涂料（重庆）化工有限公司 | Phosphorus-free normal-temperature composite metal surface degreasing agent and preparation method thereof |
| CN116695122B (en) * | 2023-08-02 | 2024-08-09 | 深圳市板明科技股份有限公司 | Super-roughening microetching solution and super-roughening microetching method for IC carrier plate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5855805A (en) * | 1996-08-08 | 1999-01-05 | Fmc Corporation | Microetching and cleaning of printed wiring boards |
| CN102925894A (en) * | 2012-10-09 | 2013-02-13 | 江阴润玛电子材料股份有限公司 | Acid copper etching liquid and preparation process thereof |
| CN105578783A (en) * | 2015-12-29 | 2016-05-11 | 珠海斯美特电子材料有限公司 | Alkaline oil removal agent for flexible printed circuit board and preparation method of alkaline oil removal agent |
| CN109439448A (en) * | 2018-11-16 | 2019-03-08 | 上海污师环保科技有限公司 | A kind of self-cleaning washing particle of the ozone of rapid osmotic |
| CN112095110A (en) * | 2020-11-18 | 2020-12-18 | 苏州天承化工有限公司 | ABF surface treating agent and preparation method and application thereof |
| CN113150887A (en) * | 2021-03-29 | 2021-07-23 | 完美（广东）日用品有限公司 | Neutral cleaning agent for water-in-oil cosmetics and preparation method thereof |
| CN114621828A (en) * | 2021-03-29 | 2022-06-14 | 南通麦特隆新材料科技有限公司 | Degreasing agent for IC carrier plate through hole landfill and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7189685B2 (en) * | 2004-07-23 | 2007-03-13 | Ecclab Inc. | Method and composition for removing hydrophobic soil |
-
2022
- 2022-08-11 CN CN202210960576.7A patent/CN115198279B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5855805A (en) * | 1996-08-08 | 1999-01-05 | Fmc Corporation | Microetching and cleaning of printed wiring boards |
| CN102925894A (en) * | 2012-10-09 | 2013-02-13 | 江阴润玛电子材料股份有限公司 | Acid copper etching liquid and preparation process thereof |
| CN105578783A (en) * | 2015-12-29 | 2016-05-11 | 珠海斯美特电子材料有限公司 | Alkaline oil removal agent for flexible printed circuit board and preparation method of alkaline oil removal agent |
| CN109439448A (en) * | 2018-11-16 | 2019-03-08 | 上海污师环保科技有限公司 | A kind of self-cleaning washing particle of the ozone of rapid osmotic |
| CN112095110A (en) * | 2020-11-18 | 2020-12-18 | 苏州天承化工有限公司 | ABF surface treating agent and preparation method and application thereof |
| CN113150887A (en) * | 2021-03-29 | 2021-07-23 | 完美（广东）日用品有限公司 | Neutral cleaning agent for water-in-oil cosmetics and preparation method thereof |
| CN114621828A (en) * | 2021-03-29 | 2022-06-14 | 南通麦特隆新材料科技有限公司 | Degreasing agent for IC carrier plate through hole landfill and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115198279A (en) | 2022-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115198279B (en) | Degreasing agent suitable for IC carrier plate flashing method and application thereof | |
| KR101298193B1 (en) | Method for wafer dicing and composition useful thereof | |
| US5393448A (en) | Aqueous electronic circuit assembly cleaner and method | |
| US5464553A (en) | Low foaming effective hydrotrope | |
| CN112095110B (en) | ABF surface treating agent and preparation method and application thereof | |
| US5264046A (en) | Aqueous electronic circuit assembly cleaner and cleaning method | |
| TWI696693B (en) | Detergent composition for flux | |
| CN116607149B (en) | Copper surface microetching roughening solution for IC carrier plate and preparation method and application thereof | |
| TWI796397B (en) | Detergent composition for resin mask peeling | |
| US5296041A (en) | Aqueous electronic circuit assembly cleaner and method | |
| CN115074734A (en) | Copper-reducing additive for aluminum substrate circuit board and preparation method and use method thereof | |
| CN103113972B (en) | Efficient scribing liquid for interconnection encapsulation of chip copper | |
| USRE35045E (en) | Method for removing soldering flux with alkaline metal carbonate salts and an alkali metal silicate | |
| CN105022237A (en) | Metal low-etching photoresist stripping liquid | |
| JPH0362895A (en) | Detergent composition | |
| CN114621828A (en) | Degreasing agent for IC carrier plate through hole landfill and preparation method thereof | |
| KR101432389B1 (en) | A degreasing agent for pretreatment process of photo solder resist and degreasing method using the same | |
| CN117144367A (en) | Circuit etching solution for IC packaging carrier plate and preparation method and application thereof | |
| CN112592769A (en) | Low-VOC semiconductor chip cleaning agent and preparation method thereof | |
| JP2019112498A (en) | Resin mask peeling and cleaning method | |
| CN116695122B (en) | Super-roughening microetching solution and super-roughening microetching method for IC carrier plate | |
| CN116657148B (en) | Film stripping liquid and film stripping method for IC carrier plate | |
| JP4069396B2 (en) | Cleaning composition | |
| TW202223074A (en) | Flux cleaning agent composition | |
| CN117872693B (en) | Positive photoresist stripping solution, preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |