CN114924342A - Selective infrared radiation stealth material and preparation method thereof - Google Patents
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- CN114924342A CN114924342A CN202210229135.XA CN202210229135A CN114924342A CN 114924342 A CN114924342 A CN 114924342A CN 202210229135 A CN202210229135 A CN 202210229135A CN 114924342 A CN114924342 A CN 114924342A
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- 239000000463 material Substances 0.000 title claims abstract description 41
- 230000005855 radiation Effects 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011888 foil Substances 0.000 claims abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 33
- 239000002346 layers by function Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/286—Interference filters comprising deposited thin solid films having four or fewer layers, e.g. for achieving a colour effect
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a selective infrared radiation stealth material. The selective infrared radiation functional layer is characterized by comprising an aluminum foil substrate, and a plurality of layers of metal and semiconductor films deposited on the surface of the substrate, wherein the multilayer structure is respectively a germanium film layer, a silver film layer, a germanium film layer and a zinc sulfide film layer from top to bottom. The invention also provides a preparation method of the stealth material, and the stealth material can realize low emissivity in the wave bands of 3.0-5.0 mu m and 8.0-14.0 mu m and high emissivity in the wave bands of 5.0-8.0 mu m.
Description
Technical Field
The invention belongs to the field of functional materials, and particularly relates to a stealth material and a preparation method thereof.
Background
In recent years, infrared stealth realization through thermal radiation regulation is the leading research of stealth technology, and a large number of subject problems still exist in the technology and need to be solved.
The purpose of infrared stealth is mainly to reduce the infrared characteristics of a target, and a common means is to eliminate or reduce the difference of radiation characteristics of two atmospheric windows (3.0-5.0 μm, 8.0-14.0 μm) in the middle and far infrared band between the target and a background. The use of low emissivity infrared stealth materials is still the dominant mode of infrared stealth. The traditional infrared low-emissivity material has low emissivity in the whole infrared band, and covers the 3.0-5.0 μm and 8.0-14.0 μm bands of infrared detection. According to stefan-boltzmann's law, infrared radiation intensity is related to temperature T and emissivity. The traditional low emissivity material mainly reduces the emissivity to reduce the infrared radiation intensity, so as to realize infrared stealth. But the infrared characteristics of the target are strongly related to temperature according to stefan-boltzmann's law. An increase in temperature also leads to an increase in the radiation intensity. For the traditional low emissivity material, the low emissivity of the full infrared band can reduce the efficiency of radiating the heat of the target through radiation, so that the temperature of the target is rapidly increased, the infrared radiation characteristic of the target is further enhanced, and the infrared radiation from the inside to the outside of the target can not be effectively blocked, so that the low emissivity material has a large difference with the application requirement in the aspect of low infrared emissivity performance. Therefore, selective radiation materials with low emissivity and radiation cooling performance are the development trend of infrared stealth materials. Specifically, in the infrared windows of 3.0-5.0 μm and 8.0-14.0 μm, the material has low emissivity to avoid detection by an infrared detector; and in the wave band of 5.0-8.0 μm of the non-infrared window, the material has high emissivity for radiation cooling. And starting from the aspects of reducing emissivity and cooling, the infrared radiation characteristic of the target is reduced, so that infrared stealth is realized.
At present, a Chinese patent with the patent number of 201110052236.6, a Chinese patent with the patent number of 201310078127.0 and a Chinese patent with the patent number of 201610767391.9 respectively disclose several infrared stealth materials and preparation methods thereof through different material structure design methods, and theoretically realize infrared stealth. However, since the stealth in the infrared band of the above patent is realized by reducing the emissivity of the infrared full band, the problem of stealth failure caused by heat accumulation due to infrared full band emission cannot be solved. Meanwhile, the Chinese patent with the patent number of 201911007549.2 provides a selective infrared radiation stealth material, which realizes a structure with lower emissivity at the wave bands of 3.0-5.0 μm and 8.0-14.0 μm and a certain emissivity at the wave bands of 5.0-8.0 μm. But also has the problems that the emissivity in the wavelength band of 8.0-14.0 μm is not low enough, and the emissivity in the wavelength band of 5.0-8.0 μm is not high enough.
Therefore, it is important to develop a selective infrared radiation stealth material that can overcome the above-mentioned deficiencies and drawbacks in the art.
Disclosure of Invention
The technical problem to be solved by the invention is to overcome the defects and shortcomings mentioned in the background technology, and provide a selective radiation material and a preparation method thereof, wherein the material meets the requirements of low infrared emissivity and radiation cooling. In order to solve the technical problems: the technical scheme provided by the invention is as follows:
a stealth material with selective radiation characteristics comprises a selective infrared functional layer and an anti-reflection layer, wherein the selective infrared functional layer comprises an aluminum foil substrate and a multilayer thin film structure deposited on the surface of the substrate, and the multilayer thin film structure comprises a germanium thin film layer, a silver thin film layer, a germanium thin film layer, a silver thin film layer and a germanium thin film layer from top to bottom; the anti-reflection layer is a zinc sulfide film.
In the stealth material, the selective infrared radiation structure consists of a plurality of layers of different metal and semiconductor thin film layers, and has the advantages of thin thickness, wide raw material source and low cost. In the present invention, the substrate is preferably an aluminum foil.
In the stealth material, the total number of the metal and semiconductor thin films is preferably 6, and a germanium thin film layer is preferably in contact with the aluminum foil substrate. According to the above setting, the selective radiation characteristic can be realized by the infrared light.
In the stealth material, preferably, the thickness of the silver thin film layer is 10nm, and the thickness of the germanium thin film layer is 500-700 nm. The change of the thickness of the film layer or the change of the layer number in the invention can cause the spectral characteristics of the material obtained in the invention to deviate from the preset target of the invention, and the thickness of each layer is controlled within the range, so that the selective infrared radiation structure with better effect can be obtained.
In the stealth material, the thickness of the zinc sulfide thin film layer is preferably 163 nm. The thickness is set, so that the infrared light can have a good anti-reflection effect.
In the stealth material, preferably, the double-cavity structure aims to widen the absorption resonance peak of a 5.0-8.0um waveband, and ensure the lower emissivity of an infrared window and simultaneously ensure that the 5.0-8.0um waveband has higher emissivity.
In the stealth material, the aluminum foil is used as a substrate and has a crucial influence on the whole infrared radiation regulation and control structure, on one hand, the function of the selective infrared radiation function layer is ensured to be played by combining other structural layers, on the other hand, the flexible application possibility is provided for the whole structure, and the application range and the application scene of the structure are expanded.
Compared with the prior art, the invention has the advantages that;
the selective infrared radiation stealth functional layer can realize that the average emissivity at the wave bands of 3.0-5.0 mu m and 8.0-14.0 mu m can be as low as 0.2 and 0.25 and the average emissivity at the non-window wave band of 5.0-8.0 mu m can be more than 0.9 through the structural design. The selective infrared radiation stealth structure meets the requirements of low infrared emissivity and radiation cooling.
The selective infrared radiation material has the advantages of simple structure, light weight, thin thickness, wide material source and low cost.
The processing and manufacturing process of the selective infrared radiation material is very simple, convenient to operate and easy for large-scale production and application.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the description of the following figures are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a selective infrared radiation material.
FIG. 2 is a graph showing the emissivity spectrum of the selective infrared radiation material obtained by simulation at a wavelength band of 3.0-14.0 μm.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to facilitate an understanding of the invention, reference will now be made to the following more complete and detailed description taken in conjunction with the accompanying drawings, and it is not intended to limit the scope of the invention to the specific embodiments described below.
Unless otherwise defined, the following terms used in the present specification have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the scope of the present invention.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by existing methods.
Example 1:
as shown in the structure of figure 1, the stealth material for selective infrared radiation is formed by compounding a plurality of layers of metal and semiconductor films. The selective infrared radiation structure comprises an aluminum foil substrate, and a germanium thin film layer, a silver thin film layer, a germanium thin film layer and a zinc sulfide thin film layer which are deposited on the aluminum foil substrate, wherein the thicknesses of the germanium thin film layer, the silver thin film layer, the germanium thin film layer and the zinc sulfide thin film layer are 580nm, 10nm, 580nm, 10nm and 163nm respectively.
The preparation method of the selective infrared radiation stealth material comprises the following steps:
and respectively depositing the metal and semiconductor film layers with the thicknesses on the aluminum foil substrate by adopting an electron beam evaporation method to obtain the selective infrared radiation structure.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (6)
1. A selective infrared radiation stealth material. The infrared radiation regulation and control structure is characterized by comprising an aluminum foil substrate, and a plurality of layers of metal and semiconductor films deposited on the surface of the aluminum foil substrate, wherein the multilayer structure is respectively a germanium film layer, a silver film layer, a germanium film layer and a zinc sulfide film layer from top to bottom.
2. The stealth material of claim 1, wherein the total number of deposited thin films is 6, and a germanium thin film layer is in contact with the aluminum foil substrate.
3. The stealth material of claim 1, wherein the thickness of the silver thin film layer is 10-50nm, and the thickness of the germanium thin film layer is 300-700 nm.
4. The stealth material of claim 1, wherein the zinc sulfide is 163nm thick.
5. A method for preparing a selective infrared radiation cloaking material as defined in any one of claims 1 to 4, comprising the steps of:
(1) before deposition, the aluminum foil substrate is cleaned, deionized water is used for cleaning, and then the aluminum foil substrate is soaked in absolute ethyl alcohol for ultrasonic cleaning.
(2) And depositing each metal and semiconductor layer on the surface of the cleaned aluminum foil substrate by adopting a physical vapor deposition method to obtain the selective infrared radiation structure.
6. The method according to claim 5, wherein the physical vapor deposition method is an electron beam evaporation method or a magnetron sputtering method.
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| CN202210229135.XA CN114924342A (en) | 2022-03-10 | 2022-03-10 | Selective infrared radiation stealth material and preparation method thereof |
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Cited By (1)
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|---|---|---|---|---|
| CN117107186A (en) * | 2023-10-24 | 2023-11-24 | 矿冶科技集团有限公司 | Gradient ceramic reinforced silver-based composite low-infrared-emissivity coating and preparation method thereof |
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Application publication date: 20220819 |