CN103928511A - Ohmic contact system suitable for gallium nitride component - Google Patents
Ohmic contact system suitable for gallium nitride component Download PDFInfo
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- CN103928511A CN103928511A CN201410153078.7A CN201410153078A CN103928511A CN 103928511 A CN103928511 A CN 103928511A CN 201410153078 A CN201410153078 A CN 201410153078A CN 103928511 A CN103928511 A CN 103928511A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 47
- 239000000956 alloy Substances 0.000 claims abstract description 47
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 38
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 9
- 238000002207 thermal evaporation Methods 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 60
- 239000010931 gold Substances 0.000 description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000011161 development Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium titanium nitrogen Chemical compound 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017150 AlTi Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses an ohmic contact system suitable for a gallium nitride component and relates to the technical field of semi-conductor devices. The upper surface of a GaN-based HEMT component is sequentially provided with Si and/or Ge, Al, Ti, Metal and Au from bottom to top, wherein the Metal is one of Ti, Ni, Pt and Mo. Alloy annealing is carried out in the nitrogen condition so that the component can be made. According to the ohmic contact system, ideal and uniform ohmic contact can be obtained between the temperatures ranging from 700 DEG C to 870 DEG C and within the range of 20-60s, the alloy temperature is higher and the time range is wider compared with those of a traditional ohmic contact system; the process repeatability is improved, the appearance is flat after being alloyed, and the edge is neat.
Description
Technical field
The present invention relates to transistor device technical field.
Background technology
GaN material is as the semi-conductive representative of the third generation, it is the important semi-conducting material of one after Si, GaAs material, owing to thering is the good characteristics such as large energy gap, high critical field strength, high carrier saturated velocity and high temperature resistant anti-irradiation, get more and more people's extensive concerning.Wherein GaN base heterojunction (as AlGaN/GaN and InAl/GaN etc.) high electron mobility field-effect transistor (HEMT), at microwave and excellent properties that millimeter wave field displayed, makes it have been carried out to extensive and deep research both at home and abroad.Through effort in the last few years, GaN HEMT performance and stability have obtained tremendous increase.
In the process for making of GaN HEMT, it is one of key technology that ohmic contact craft is leaked in source, directly affects frequency and the power-performance of device.Source is leaked ohmic contact craft and is extensively adopted the method such as vacuum evaporation, sputtering sedimentation in GaN base heterojunction material surface stacking titanium/aluminium/refractory metal/gold (Ti/Al/Metal/Au) multiple layer metal system, and then high temperature alloy forms ohmic contact.In high-temperature annealing process, metal and nitride react, and generate titanium nitride (TiN) and aluminium titanium nitrogen (AlTi
2n), thereby obtain low ohmic contact resistance rate, between Ti and Al, also formed TiAl simultaneously
3the titanium-aluminium alloy of metallographic, has further reduced ohmic contact resistance rate.Metal in Ti/Al/Metal/Au multiple layer metal system is called as " barrier layer ", adopts the refractory metals such as titanium (Ti), nickel (Ni), platinum (Pt) and molybdenum (Mo) more.For the Ti/Al/Metal/Au multiple layer metal system being widely adopted, its metal ratio, metal layer thickness, alloy temperature and time etc. are very large on ohmic contact impact, too high too low, the too short performance that all can greatly affect ohmic contact of overlong time of annealing temperature.At present, bibliographical information is substantially all to adopt Ti/Al/Ni/Au, Ti/Al/Pt/Au and Ti/Al/Ti/Au etc., its alloy temperature is generally even higher up to 700-950 DEG C, cause technology difficulty to increase, and, from existing result, the surface topography after alloy and neat in edge degree are unsatisfactory, have much room for improvement.
Meanwhile, the Ti metal level directly contacting with GaN also has by the alternative correlative study of complex metal layer (as multiple layer metals such as Ti/Al/Ti/Al/Ti/Al), in addition, also has about ohmic contact regions secondary epitaxy growth n
+the Study of Ohmic Contact of GaN, all these effort are be all devoted to reduce ohmic contact resistance rate and improve alloy surface pattern and neat in edge degree, to improve the stability of device.But clearly, adopt complex metal layer and ohmic contact regions secondary epitaxy growth n
+gaN has increased manufacturing cost and the process complexity of device undoubtedly, and the stability of this technique to device is disadvantageous.Therefore, from the practical angle of promoting of GaN device, ensureing under the prerequisite of ohm contact performance, the number of plies and the metal species that reduce metal system should be the directions that people make great efforts as far as possible.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of ohmic contact system that is applicable to gallium nitride device, can be between 700～870 DEG C, within the scope of 20～60s, obtain desirable consistent ohmic contact, alloy temperature and time range are larger than traditional ohmic contact system, improve process repeatability, and the pattern after alloy is more smooth, and edge is more neat.
The technical solution used in the present invention is: a kind of ohmic contact system that is applicable to gallium nitride device, and GaN HEMT upper surface is followed successively by Si and/or Ge, Al, Ti, Metal and five layers of metal of Au on from top to bottom; Described Metal is the one in Ti, Ni, Pt or Mo; And in nitrogen atmosphere, carry out that alloy annealing makes.
Five layers of metal form by thermal evaporation, electron beam evaporation or sputter.
GaN sill is AlGaN/GaN, InAlN/GaN or AlN/GaN heterojunction material.
Metal is refractory metal.
Five layers of metal ohmic contact technology of silicon/aluminium/titanium/refractory metal/gold (Si/Al/Ti/Metal/Au) in ohmic contact system of the present invention are key process technology in GaN device.Metal ohmic contact system of the present invention is made up of five layers of metal of Si/Al/Ti/Metal/Au, can adopt thermal evaporation, electron beam evaporation or sputter to realize, the part contacting with GaN material is followed successively by Si and/or Ge, Al, Ti, Metal, Au five-layer structure, and wherein " Metal " is the one in titanium (Ti), nickel (Ni), platinum (Pt) or four kinds of refractory metals of molybdenum (Mo).Be different from traditional Ti/Al/Ni/Au metal system, the ground floor contacting with GaN material in the present invention is silicon layer, silicon can diffuse to GaN material in alloy process, be beneficial to and form good ohmic contact, effectively reduce ohmic contact, reduce ohm alloy temperature simultaneously, improved the surface topography after alloy; In addition, in this invention, Al is placed under Ti metal level, has effectively expanded alloy temperature scope, simultaneously Ti metal, on Al, has strengthened the barrier effect to Al, has effectively prevented the excessive of Al in alloy process, has improved the ohmic contact pattern after alloy.
New construction ohmic contact alloy technology of the present invention, can be between 700～870 DEG C, within the scope of 20S～60S, obtain more satisfactory consistent ohmic contact, alloy temperature can cause along with the difference of ohmic metal system the difference of alloy temperature, and alloy temperature is generally all in 700～950 DEG C, still for a certain ohmic contact system, its alloys range is generally 100 DEG C of left and right, the metal system that the present invention is used, alloys range is approximately 200 DEG C, has greatly improved alloy temperature scope; There are larger process choice scope alloy temperature and time, have reduced technology difficulty, have improved process repeatability, and pattern after alloy is more smooth, and edge is more neat.
The beneficial effect that adopts technique scheme to produce is: the present invention can be between 700～870 DEG C, within the scope of 20～60s, obtain desirable consistent ohmic contact, alloy temperature and time range are larger than traditional ohmic contact system, improve process repeatability, and the pattern after alloy is more smooth, and edge is more neat.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the structural representation of embodiment 1;
Fig. 2 is traditional ohmic contact system configuration schematic diagram;
Fig. 3 is the general structure schematic diagram of GaN sill (AlGaN/GaN) and substrate;
Fig. 4 is the schematic diagram of the processing step (1) of embodiment 1;
Fig. 5 is the schematic diagram of the processing step (2) of embodiment 1;
Fig. 6 is the schematic diagram of the processing step (3) of embodiment 1;
Fig. 7 is the ohmic contact resistance curve chart after alloy under different temperatures of the present invention;
Fig. 8 is the ohmic contact resistance curve chart after alloy under traditional Ti/Al/Ni/Au metal system different temperatures.
Embodiment
Embodiment 1
Be applicable to the ohmic contact system of gallium nitride device, on AlGaN/GaN HEMT upper surface, be followed successively by Si, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Fig. 7 and Fig. 8 are respectively and adopt the ohmic contact resistance after alloy under Si/Al/Ti/Metal/Au novel metal system and traditional Ti/Al/Ni/Au metal system different temperatures, and its alloy time is all 40S.Comparison diagram 7 and Fig. 8 can see, adopt the ohmic contact resistance of Si/Al/Ti/Metal/Au novel metal system acquisition to be less than the ohmic contact resistance that adopts traditional Ti/Al/Ni/Au metal system to obtain, and its alloys range are larger.
In addition, utilize atomic force microscope test Si/Al/Ti/Metal/Au novel metal system and traditional Ti/Al/Ni/Au metal system surface roughness after alloy 40S at 800 DEG C.Find, the roughness (60.5nm) on the ohmic contact surface that employing Si/Al/Ti/Metal/Au novel metal system obtains is much smaller than the roughness (110nm) of the ohmic contact that adopts traditional Ti/Al/Ni/Au metal system to obtain, and namely explanation employing Si/Al/Ti/Metal/Au novel metal system can obtain good alloy pattern.
Embodiment 2
Be applicable to the ohmic contact system of gallium nitride device, on AlGaN/GaN HEMT upper surface, be followed successively by Ge, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Embodiment 3
Be applicable to the ohmic contact system of gallium nitride device, on AlGaN/GaN HEMT upper surface, be followed successively by Si and Ge alloy, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Embodiment 4
Be applicable to the ohmic contact system of gallium nitride device, on InAlN/GaN HEMT upper surface, be followed successively by Si, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Embodiment 5
Be applicable to the ohmic contact system of gallium nitride device, on AlN/GaN HEMT upper surface, be followed successively by Ge, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Embodiment 6
Be applicable to the ohmic contact system of gallium nitride device, on AlN/GaN HEMT upper surface, be followed successively by Si, Al, Ti, Metal and five layers of metal of Au; Described Metal is the one in Ti, Ni, Pt or Mo.
Preparation method is: (1) is coated with photoresist at AlGaN/GaN material surface, obtains good litho pattern through photoetching development technique; (2) utilize thermal evaporation, electron beam evaporation or sputter on the AlGaN/GaN material surface of litho pattern and evaporate successively Si, Al, Ti, Metal and five layers of metal of Au; (3) obtain Si, Al, Ti, Metal and five layers of novel metal ohmic contact of Au by stripping technology; In nitrogen atmosphere, in the temperature range between 680～870 DEG C, carry out alloy annealing, the alloy time is 20～60s.
Claims (3)
1. an ohmic contact system that is applicable to gallium nitride device, is characterized in that: GaN HEMT upper surface is followed successively by Si and/or Ge, Al, Ti, Metal and five layers of metal of Au from top to bottom; Described Metal is the one in Ti, Ni, Pt or Mo; And in nitrogen atmosphere, carry out that alloy annealing makes.
2. the ohmic contact system that is applicable to gallium nitride device according to claim 1, is characterized in that: five layers of metal form by thermal evaporation, electron beam evaporation or sputter.
3. the ohmic contact system that is applicable to gallium nitride device according to claim 1, is characterized in that: GaN sill is AlGaN/GaN, InAlN/GaN or AlN/GaN heterojunction material.
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| CN201410153078.7A CN103928511A (en) | 2014-04-16 | 2014-04-16 | Ohmic contact system suitable for gallium nitride component |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992967A (en) * | 2015-05-29 | 2015-10-21 | 中国电子科技集团公司第十三研究所 | Method for reducing ohmic contact resistance of GaN polarization doping field effect transistor |
| CN109585544A (en) * | 2018-11-20 | 2019-04-05 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on the enhanced HEMT device low resistance Ohmic contact of gallium nitride |
| CN109638071A (en) * | 2018-11-20 | 2019-04-16 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on Si underlayer nitriding gallium HEMT low resistance Ohmic contact |
| CN109659363A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure |
| CN109659362A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure |
| CN109659358A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of low ohm contact resistance structure of gallium nitride HEMT and preparation method thereof |
| WO2019165975A1 (en) * | 2018-02-28 | 2019-09-06 | 中国电子科技集团公司第十三研究所 | Method for preparing ohmic contact electrode of gan-based device |
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| CN102576729A (en) * | 2009-12-16 | 2012-07-11 | 国家半导体公司 | Low ohmic contacts containing germanium for gallium nitride or other nitride-based power devices |
| CN103094334A (en) * | 2011-10-27 | 2013-05-08 | 三星电子株式会社 | Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same |
| US20130234153A1 (en) * | 2009-04-08 | 2013-09-12 | Efficient Power Conversion Corporation | ENHANCEMENT MODE GaN HEMT DEVICE |
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| US20020146856A1 (en) * | 1998-07-30 | 2002-10-10 | Etsuo Morita | Electrode, semiconductor device and methods for making them |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992967A (en) * | 2015-05-29 | 2015-10-21 | 中国电子科技集团公司第十三研究所 | Method for reducing ohmic contact resistance of GaN polarization doping field effect transistor |
| WO2019165975A1 (en) * | 2018-02-28 | 2019-09-06 | 中国电子科技集团公司第十三研究所 | Method for preparing ohmic contact electrode of gan-based device |
| US11239081B2 (en) | 2018-02-28 | 2022-02-01 | The 13Th Research Institute Of China Electronics | Method for preparing ohmic contact electrode of gallium nitride-based device |
| CN109585544A (en) * | 2018-11-20 | 2019-04-05 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on the enhanced HEMT device low resistance Ohmic contact of gallium nitride |
| CN109638071A (en) * | 2018-11-20 | 2019-04-16 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on Si underlayer nitriding gallium HEMT low resistance Ohmic contact |
| CN109659363A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure |
| CN109659362A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure |
| CN109659358A (en) * | 2018-11-20 | 2019-04-19 | 西安电子科技大学芜湖研究院 | A kind of low ohm contact resistance structure of gallium nitride HEMT and preparation method thereof |
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Application publication date: 20140716 |