CN103746013A - 一种石墨烯太阳能电池及其制备方法 - Google Patents
一种石墨烯太阳能电池及其制备方法 Download PDFInfo
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- CN103746013A CN103746013A CN201410025602.2A CN201410025602A CN103746013A CN 103746013 A CN103746013 A CN 103746013A CN 201410025602 A CN201410025602 A CN 201410025602A CN 103746013 A CN103746013 A CN 103746013A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
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Abstract
Description
Claims (7)
Priority Applications (1)
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CN201410025602.2A CN103746013B (zh) | 2014-01-20 | 2014-01-20 | 一种石墨烯太阳能电池及其制备方法 |
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CN201410025602.2A CN103746013B (zh) | 2014-01-20 | 2014-01-20 | 一种石墨烯太阳能电池及其制备方法 |
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CN103746013A true CN103746013A (zh) | 2014-04-23 |
CN103746013B CN103746013B (zh) | 2016-03-30 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN104393057A (zh) * | 2014-12-09 | 2015-03-04 | 无锡同春新能源科技有限公司 | 用石墨烯汇流线和汇流条提高输电量的晶体硅太阳能电池 |
CN106024935A (zh) * | 2016-08-11 | 2016-10-12 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
CN106409988A (zh) * | 2016-12-09 | 2017-02-15 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池的制备方法 |
CN109346558A (zh) * | 2018-10-10 | 2019-02-15 | 北京铂阳顶荣光伏科技有限公司 | 透光薄膜太阳能芯片及制作方法 |
CN109752785A (zh) * | 2019-03-05 | 2019-05-14 | 金华伏安光电科技有限公司 | 一种电驱动的圆偏振光光源 |
CN110137269A (zh) * | 2019-04-16 | 2019-08-16 | 浙江大学 | 一种石墨烯/InGaN多结异质太阳能电池及其制备方法 |
CN110304754A (zh) * | 2019-03-19 | 2019-10-08 | 中国电子系统工程第二建设有限公司 | 一种高浓度含氟废水深度处理方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020171781A1 (en) * | 2001-05-16 | 2002-11-21 | Dong-Gyu Kim | Thin film transistor array substrate for liquid crystal display |
CN1879054A (zh) * | 2003-09-18 | 2006-12-13 | 三星电子株式会社 | 薄膜晶体管阵列面板及其制造方法 |
CN101226311A (zh) * | 2007-01-16 | 2008-07-23 | 株式会社日立显示器 | 显示装置 |
WO2011063743A1 (zh) * | 2009-11-27 | 2011-06-03 | 无锡尚德太阳能电力有限公司 | 太阳电池正面电极的形成方法 |
CN102569434A (zh) * | 2010-12-27 | 2012-07-11 | 中国科学院微电子研究所 | 带绒面导电氧化锌薄膜的晶体硅太阳能电池及其制造方法 |
CN102623564A (zh) * | 2012-03-30 | 2012-08-01 | 中山大学 | 一种具有激光开槽正面电极的晶体硅太阳电池的制作方法 |
CN103092453A (zh) * | 2013-02-06 | 2013-05-08 | 苏州百纳思光学科技有限公司 | 一种带太阳能电池触摸板的电子书 |
CN203733813U (zh) * | 2014-01-20 | 2014-07-23 | 瑞德兴阳新能源技术有限公司 | 一种石墨烯太阳能电池 |
-
2014
- 2014-01-20 CN CN201410025602.2A patent/CN103746013B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020171781A1 (en) * | 2001-05-16 | 2002-11-21 | Dong-Gyu Kim | Thin film transistor array substrate for liquid crystal display |
CN1879054A (zh) * | 2003-09-18 | 2006-12-13 | 三星电子株式会社 | 薄膜晶体管阵列面板及其制造方法 |
CN101226311A (zh) * | 2007-01-16 | 2008-07-23 | 株式会社日立显示器 | 显示装置 |
WO2011063743A1 (zh) * | 2009-11-27 | 2011-06-03 | 无锡尚德太阳能电力有限公司 | 太阳电池正面电极的形成方法 |
CN102569434A (zh) * | 2010-12-27 | 2012-07-11 | 中国科学院微电子研究所 | 带绒面导电氧化锌薄膜的晶体硅太阳能电池及其制造方法 |
CN102623564A (zh) * | 2012-03-30 | 2012-08-01 | 中山大学 | 一种具有激光开槽正面电极的晶体硅太阳电池的制作方法 |
CN103092453A (zh) * | 2013-02-06 | 2013-05-08 | 苏州百纳思光学科技有限公司 | 一种带太阳能电池触摸板的电子书 |
CN203733813U (zh) * | 2014-01-20 | 2014-07-23 | 瑞德兴阳新能源技术有限公司 | 一种石墨烯太阳能电池 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN104134706B (zh) * | 2014-07-17 | 2016-08-24 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN104393057A (zh) * | 2014-12-09 | 2015-03-04 | 无锡同春新能源科技有限公司 | 用石墨烯汇流线和汇流条提高输电量的晶体硅太阳能电池 |
CN106024935A (zh) * | 2016-08-11 | 2016-10-12 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
CN106024935B (zh) * | 2016-08-11 | 2018-01-23 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
CN106409988A (zh) * | 2016-12-09 | 2017-02-15 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池的制备方法 |
CN106409988B (zh) * | 2016-12-09 | 2018-02-02 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池的制备方法 |
CN109346558A (zh) * | 2018-10-10 | 2019-02-15 | 北京铂阳顶荣光伏科技有限公司 | 透光薄膜太阳能芯片及制作方法 |
CN109752785A (zh) * | 2019-03-05 | 2019-05-14 | 金华伏安光电科技有限公司 | 一种电驱动的圆偏振光光源 |
CN110304754A (zh) * | 2019-03-19 | 2019-10-08 | 中国电子系统工程第二建设有限公司 | 一种高浓度含氟废水深度处理方法 |
CN110304754B (zh) * | 2019-03-19 | 2021-11-23 | 中国电子系统工程第二建设有限公司 | 一种高浓度含氟废水深度处理方法 |
CN110137269A (zh) * | 2019-04-16 | 2019-08-16 | 浙江大学 | 一种石墨烯/InGaN多结异质太阳能电池及其制备方法 |
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