CN102969356B - Terminal structure of super-junction power device - Google Patents
Terminal structure of super-junction power device Download PDFInfo
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- CN102969356B CN102969356B CN201210443873.0A CN201210443873A CN102969356B CN 102969356 B CN102969356 B CN 102969356B CN 201210443873 A CN201210443873 A CN 201210443873A CN 102969356 B CN102969356 B CN 102969356B
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Abstract
The invention provides a terminal structure of a super-junction power device and belongs to the technical field of semiconductor power devices. The terminal structure of the super-junction power device comprises a device cellular and a device terminal, a drift region of the device cellular is a super-junction structure formed by P column regions and N column regions alternately, the device terminal comprises a transition terminal region and a voltage-tolerant terminal region, the transition terminal region is located between the device cellular and the voltage-tolerant terminal region, the transition terminal region is provided with a super-junction structure which is same as that of the cellular, and a doping density of P column regions and N column regions in the super-junction structure of the voltage-tolerant terminal region is less than that of the P column regions and the N column regions in the super-junction structure of the device cellular. The cellular and the terminal adopt different drift region doping densities. A cellular region adopts a highly-doped drift region to obtain low-ratio conduction resistance, and a terminal region appropriately adopts a low doping density to obtain highly resistant voltage. The terminal structure of the super-junction power device can obtain higher resistant voltage than a conventional super-junction terminal structure with the same area, and has less area than the conventional super-junction structure under the same resistant voltage.
Description
Technical field
A kind of terminal structure of super-junction power device, belongs to semiconductor power device technology field.
Background technology
Super node MOSFET is a kind of important power device occurred in recent years, its general principle is charge balance concept, by introducing super-junction structure in the drift region of common power MOSFET, substantially improve the tradeoff between the conducting resistance of common MOSFET and puncture voltage, thus obtain a wide range of applications in the power system.Basic super-junction structure is p post and the n post of interleaved, and p, n post strictly meets charge balance conditions.Under reverse bias, due to the interaction of transverse electric field and longitudinal electric field, p post district and n post district will exhaust completely, in depletion region, longitudinal electric field distribution is tending towards even, thus puncture voltage only depends on the thickness of Withstand voltage layer in theory, have nothing to do with doping content, because Withstand voltage layer doping content can improve an order of magnitude nearly, thus significantly reduce the conducting resistance of device.
The major issue that power device design will be considered is the design of junction termination structures, and good knot terminal effectively can improve device withstand voltage, reduces electric leakage and improve device reliability.In the terminal technology of traditional structure, in order to make the electric field concentration effect in main knot knee weakened, the technology such as field limiting ring, field plate that generally employ improves puncture voltage.Due to the structure cell that superjunction devices is special, the concentration of drift region is higher, and the thickness of drift region is less, and the terminal structure of common high voltage power device is no longer applicable to superjunction devices.Current most widely used super-junction structure as shown in Figure 2, the terminal structure of superjunction devices is divided into two parts: transitional region II and terminal area III, two parts adopt the super-junction structure identical with cellular part I usually, and the design principle of Main Basis remains the withstand voltage principle of superjunction.
Due to the important parameter that conduction resistance is MOSFET, therefore the cellular part of super node MOSFET adopts the higher drift region of doping content to obtain low conduction resistance usually.And terminal part does not provide current path when devices function, only reverse withstand voltage time work, what therefore we paid close attention to is its withstand voltage and area, ites is desirable to realize under as far as possible little area high withstand voltage.Therefore, the conventional super-junction terminal structure shown in accompanying drawing 2, adopts the drift region of the high-dopant concentration identical with cellular, and in fact for reduction terminal area, it is disadvantageous for improving terminal withstand voltage.
Summary of the invention
The object of the present invention is to provide a kind of terminal structure improving the withstand voltage novel super junction power device of super junction power device.This terminal structure can obtain higher withstand voltage when identical with conventional super-junction terminal structure area, or when identical withstand voltage there is the area less than conventional super-junction structure.
Core concept of the present invention is that the cellular of super junction power device and terminal adopt different doping contents.Cellular region adopts highly doped drift region to obtain low conduction resistance, suitably reduces the doping content of termination environment, obtains high withstand voltage.As shown in Figure 1, the terminal that the present invention proposes is divided into: transition region II, termination environment III.The region of two kinds of conduction types of transition region II adopts with the identical width in cellular region I and doping content, meets charge balance conditions; Termination environment III adopts lower drift doping concentration, and the depletion region of last ring of terminal can fully be expanded, and improves terminal withstand voltage.
Technical solution of the present invention is as follows:
A terminal structure for super junction power device, as shown in Figure 1, comprises device cellular I and device terminal; The drift region of described device cellular I forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor.Described device terminal comprises two parts: transit terminal district II and withstand voltage termination environment III; Described transit terminal district II is between device cellular I and withstand voltage termination environment III, and the width dimensions in transit terminal district II is less than the width dimensions of withstand voltage termination environment III; Transit terminal district II forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, and in the super-junction structure in transit terminal district II, P post region semiconductor is identical with the doping content of N post district semiconductor with P post region semiconductor in the super-junction structure of device cellular I with the doping content of N post district semiconductor; Withstand voltage termination environment III equally forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, but in the super-junction structure of withstand voltage termination environment III, the doping content of P post region semiconductor and N post district semiconductor is less than the doping content of P post region semiconductor and N post district semiconductor in the super-junction structure of device cellular I.
Below for N-type super-junction MOSFET device terminal, operation principle of the present invention is described:
Work as source ground, miss high pressure, when grid voltage is greater than threshold voltage, super node MOSFET conducting.Now, only have cellular region to work, terminal area does not work.The conduction resistance of device is decided by drift doping concentration and the thickness of cellular region to a great extent.
When grid and source ground, when drain electrode connects high potential, device is in blocking state, and cell region bears high pressure by the super-junction structure of drift region.The difference of terminal area and cell region is: terminal part should consider the withstand voltage of vertical direction, also the withstand voltage of horizontal direction to be considered, the withstand voltage principle of vertical direction and cellular similar, and the withstand voltage mechanism in horizontal direction is similar to the field limiting ring structure of planar junction.Fig. 3 is the schematic diagram of superjunction termination depletion region, and wherein 1 is N-type drift region, and 2 is P type post, and 3 is P type tagma, and 4 is source electrode, and 5 is oxide layer.In the horizontal direction, from edge, depletion region 6 to source electrode 4, current potential drops to 0V from drain terminal voltage Vd.Figure 4 shows that the Electric Field Distribution schematic diagram of superjunction termination horizontal direction, abscissa is the length in end level direction, and ordinate is electric field strength.Peak electric field appears at P/N knot place, and the slope of electric field is determined by the doping content of P post and N post (N-type drift region).Solid line 1 is the distribution map of the electric field of conventional superjunction termination, can cause puncturing of terminal end surface when the peak value electric field Emax of horizontal direction is too high, reduces rapidly terminal withstand voltage.Reduce peak electric field strength, the method usually adopted is the number increasing P post, ties the voltage born, but can increase the area of terminal like this to reduce each P/N.And the number of P post is increased to certain degree, the withstand voltage of terminal structure will reach capacity, and cannot promote again.Dotted line 2 is the distribution map of the electric field of the new model terminal structure that the present invention proposes, and by reducing the doping content of terminal part N-type drift region, changes the slope of electric field.Can see, under same terminal area (namely identical P post number), the area (namely withstand voltage) that dotted line 2 and x-axis surround is larger.
In order to verify this beneficial effect of the invention, for N-type super node MOSFET terminal, device simulation software medici is utilized to simulate.Fig. 5 .1 is depicted as the depletion region distribution of super junction power device terminal provided by the invention when puncturing, avalanche current distribution.In this structure, device cellular I is containing half cellular, and transit terminal district II is containing a P type post, and withstand voltage termination environment III is containing three P type posts.The doping content in the N post district (being made up of N-type epitaxy layer) in cellular I and transit terminal district II is 4 × 10
15cm
-3, the doping content in the N post district (being made up of N-type epitaxy layer) of withstand voltage termination environment III is 1 × 10
14cm
-3, the doping content of the P type post of cellular I, transit terminal district II and withstand voltage termination environment III is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.Fig. 5 .2 is I-V characteristic curve when terminal structure of super-junction power device is reverse-biased in Fig. 5 .1, and puncture voltage is 157 volts.Fig. 5 .3 is the depletion region distribution of conventional N-type terminal structure of super-junction power device when puncturing, avalanche current distribution.In this structure, device cellular is containing half cellular, and termination environment is altogether containing four P type posts.The doping content of the N-type epitaxy layer of device cellular and device terminal is 4 × 10
15cm
-3, the doping content of P type post is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.Fig. 5 .4 is I-V characteristic curve when conventional N-type terminal structure of super-junction power device is reverse-biased in Fig. 5 .3, and puncture voltage is 138 volts.Relatively can find out by four figure, the depletion region expansion of a kind of terminal structure of super-junction power device that the present invention proposes is obviously wider than conventional terminal structure, thus can bear higher withstand voltage.
Accompanying drawing explanation
Fig. 1 is terminal structure of super-junction power device schematic diagram provided by the invention.
Wherein I is super junction power device cellular, and II is transition region terminal, and III is termination environment, withstand voltage zone.
Fig. 2 is conventional terminal structure of super-junction power device schematic diagram, and wherein device terminal does not divide into transit terminal district and withstand voltage termination environment.
Fig. 3 is the schematic diagram of super junction power device terminal depletion region provided by the invention, and wherein 1 is N-type drift region, and 2 is P type post, and 3 is P type tagma, and 4 is source electrode, and 5 is oxide layer, and 6 is edge, depletion region.In the horizontal direction, from edge, depletion region (6) to source electrode (4), current potential drops to 0V from drain terminal voltage (Vd).
Figure 4 shows that the surperficial one-dimensional electric field distribution schematic diagram in super junction power device end level direction provided by the invention, abscissa is the length in end level direction, and ordinate is electric field strength.Solid line 1 is the distribution map of the electric field of conventional superjunction termination, and dotted line 2 is the distribution map of the electric field of the new model terminal structure that the present invention proposes.
Fig. 5 .1-Fig. 5 .4 is depicted as the result that super junction power device terminal device simulation software medici provided by the invention simulates.
Fig. 5 .1 is depicted as the depletion region distribution of super junction power device terminal provided by the invention when puncturing, avalanche current distribution.In this structure, device cellular I is containing half cellular, and transit terminal district II is containing a P type post, and withstand voltage termination environment III is containing three P type posts.The doping content in the N post district (being made up of N-type epitaxy layer) in cellular I and transit terminal district II is 4 × 10
15cm
-3, the doping content in the N post district (being made up of N-type epitaxy layer) of withstand voltage termination environment III is 1 × 10
14cm
-3, the doping content of the P type post of cellular I, transit terminal district II and withstand voltage termination environment III is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.
Fig. 5 .2 is I-V characteristic curve when terminal structure of super-junction power device is reverse-biased in Fig. 5 .1, and puncture voltage is 157 volts.
Fig. 5 .3 is the depletion region distribution of conventional N-type terminal structure of super-junction power device when puncturing, avalanche current distribution.In this structure, device cellular is containing half cellular, and termination environment is altogether containing four P type posts.The doping content of the N-type epitaxy layer of device cellular and device terminal is 4 × 10
15cm
-3, the doping content of P type post is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.
Fig. 5 .4 is I-V characteristic curve when conventional N-type terminal structure of super-junction power device is reverse-biased in Fig. 5 .3, and puncture voltage is 138 volts.
Fig. 6 is a kind of super-junction terminal structure provided by the invention, and wherein I is device cellular, and II is transit terminal district, and III is withstand voltage termination environment.Spacing between P Xing Zhu district semiconductor wherein in withstand voltage termination environment III is heterogeneous.
Fig. 7 is a kind of super-junction terminal structure provided by the invention, and wherein I is device cellular region, and II is transit terminal district, and III is withstand voltage termination environment, adds polycrystalline field plate above the P post region semiconductor in withstand voltage termination environment III.。
Embodiment
A terminal structure for super junction power device, as shown in Figure 1, comprises device cellular I and device terminal; The drift region of described device cellular I forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor.Described device terminal comprises two parts: transit terminal district II and withstand voltage termination environment III; Described transit terminal district II is between device cellular I and withstand voltage termination environment III, and the width dimensions in transit terminal district II is less than the width dimensions of withstand voltage termination environment III; Transit terminal district II forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, and in the super-junction structure in transit terminal district II, P post region semiconductor is identical with the doping content of N post district semiconductor with P post region semiconductor in the super-junction structure of device cellular I with the doping content of N post district semiconductor; Withstand voltage termination environment III equally forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, but in the super-junction structure of withstand voltage termination environment III, the doping content of P post region semiconductor and N post district semiconductor is less than the doping content of P post region semiconductor and N post district semiconductor in the super-junction structure of device cellular I.
Below for N-type super-junction MOSFET device terminal, operation principle of the present invention is described:
Work as source ground, miss high pressure, when grid voltage is greater than threshold voltage, super node MOSFET conducting.Now, only have cellular region to work, terminal area does not work.The conduction resistance of device is decided by drift doping concentration and the thickness of cellular region to a great extent.
When grid and source ground, when drain electrode connects high potential, device is in blocking state, and cell region bears high pressure by the super-junction structure of drift region.The difference of terminal area and cell region is: terminal part should consider the withstand voltage of vertical direction, also the withstand voltage of horizontal direction to be considered, the withstand voltage principle of vertical direction and cellular similar, and the withstand voltage mechanism in horizontal direction is similar to the field limiting ring structure of planar junction.Fig. 3 is the schematic diagram of superjunction termination depletion region, and wherein 1 is N-type drift region, and 2 is P type post, and 3 is P type tagma, and 4 is source electrode, and 5 is oxide layer.In the horizontal direction, from edge, depletion region 6 to source electrode 4, current potential drops to 0V from drain terminal voltage Vd.Figure 4 shows that the Electric Field Distribution schematic diagram of superjunction termination horizontal direction, abscissa is the length in end level direction, and ordinate is electric field strength.Peak electric field appears at P/N knot place, and the slope of electric field is determined by the doping content of P post and N post (N-type drift region).Solid line 1 is the distribution map of the electric field of conventional superjunction termination, can cause puncturing of terminal end surface when the peak value electric field Emax of horizontal direction is too high, reduces rapidly terminal withstand voltage.Reduce peak electric field strength, the method usually adopted is the number increasing P post, ties the voltage born, but can increase the area of terminal like this to reduce each P/N.And the number of P post is increased to certain degree, the withstand voltage of terminal structure will reach capacity, and cannot promote again.Dotted line 2 is the distribution map of the electric field of the new model terminal structure that the present invention proposes, and by reducing the doping content of terminal part N-type drift region, changes the slope of electric field.Can see, under same terminal area (namely identical P post number), the area (namely withstand voltage) that dotted line 2 and x-axis surround is larger.
In order to verify this beneficial effect of the invention, for N-type super node MOSFET terminal, device simulation software medici is utilized to simulate.Fig. 5 .1 is depicted as the depletion region distribution of super junction power device terminal provided by the invention when puncturing, avalanche current distribution.In this structure, device cellular I is containing half cellular, and transit terminal district II is containing a P type post, and withstand voltage termination environment III is containing three P type posts.The doping content in the N post district (being made up of N-type epitaxy layer) in cellular I and transit terminal district II is 4 × 10
15cm
-3, the doping content in the N post district (being made up of N-type epitaxy layer) of withstand voltage termination environment III is 1 × 10
14cm
-3, the doping content of the P type post of cellular I, transit terminal district II and withstand voltage termination environment III is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.Fig. 5 .2 is I-V characteristic curve when terminal structure of super-junction power device is reverse-biased in Fig. 5 .1, and puncture voltage is 157 volts.Fig. 5 .3 is the depletion region distribution of conventional N-type terminal structure of super-junction power device when puncturing, avalanche current distribution.In this structure, device cellular is containing half cellular, and termination environment is altogether containing four P type posts.The doping content of the N-type epitaxy layer of device cellular and device terminal is 4 × 10
15cm
-3, the doping content of P type post is 4 × 10
15cm
-3.P type post width is 2 microns, and spacing is 2 microns, and the degree of depth is 8 microns.Fig. 5 .4 is I-V characteristic curve when conventional N-type terminal structure of super-junction power device is reverse-biased in Fig. 5 .3, and puncture voltage is 138 volts.Relatively can find out by four figure, the depletion region expansion of a kind of terminal structure of super-junction power device that the present invention proposes is obviously wider than conventional terminal structure, thus can bear higher withstand voltage.
In specific implementation process, as the case may be, when basic structure is constant, certain accommodation design can be carried out.As the P post region semiconductor of withstand voltage termination environment III or the width of N post district semiconductor identical or not identical with the width of P post region semiconductor in device cellular or N post district semiconductor, the P post region semiconductor of withstand voltage termination environment III or the spacing of N post district semiconductor identical or not identical with the spacing of P post region semiconductor in device cellular or N post district semiconductor.The situation that the spacing of the P post region semiconductor of withstand voltage termination environment III or the spacing of N post district semiconductor and P post region semiconductor in device cellular or N post district semiconductor is not identical is shown in Fig. 6.In addition, metal or polycrystalline field plate structure can also be increased above the P post region of withstand voltage termination environment III.
Those skilled in the art should know, the terminal structure of super junction power device provided by the invention goes for variety classes power device, as long as namely change device structure cell, as adopted super-junction MOSFET device cellular, superjunction IGBT device cellular or superjunction diode component structure cell, the present invention can become the terminal of different super junction power device.
Claims (5)
1. a terminal structure for super junction power device, comprises device cellular (I) and device terminal; The drift region of described device cellular (I) forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor; It is characterized in that, described device terminal comprises two parts: transit terminal district (II) and withstand voltage termination environment (III); Described transit terminal district (II) is between device cellular (I) and withstand voltage termination environment (III), and the width dimensions of transit terminal district (II) is less than the width dimensions of withstand voltage termination environment (III); Transit terminal district (II) forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, and in the super-junction structure of transit terminal district (II), P post region semiconductor is identical with the doping content of N post district semiconductor with P post region semiconductor in the super-junction structure of device cellular (I) with the doping content of N post district semiconductor; Withstand voltage termination environment (III) equally forms super-junction structure by the P post region semiconductor of interleaved and N post district semiconductor, but in the super-junction structure of withstand voltage termination environment (III), the doping content of P post region semiconductor and N post district semiconductor is less than the doping content of P post region semiconductor and N post district semiconductor in the super-junction structure of device cellular (I).
2. the terminal structure of super junction power device according to claim 1, is characterized in that, described device structure cell is super-junction MOSFET device cellular, superjunction IGBT device cellular or superjunction diode component cellular.
3. the terminal structure of super junction power device according to claim 1 and 2, it is characterized in that, the P post region semiconductor of described withstand voltage termination environment (III) or the width of N post district semiconductor identical or not identical with the width of P post region semiconductor in device cellular or N post district semiconductor.
4. the terminal structure of super junction power device according to claim 1 and 2, it is characterized in that, the P post region semiconductor of described withstand voltage termination environment (III) or the spacing of N post district semiconductor identical or not identical with the spacing of P post region semiconductor in device cellular or N post district semiconductor.
5. the terminal structure of super junction power device according to claim 1 and 2, is characterized in that, also has metal or polycrystalline field plate above the P post region semiconductor of described withstand voltage termination environment (III).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103996702B (en) * | 2014-05-26 | 2017-03-01 | 电子科技大学 | A kind of terminal structure improving super junction power device avalanche capability |
| DE112016001988B4 (en) * | 2015-04-30 | 2021-10-21 | Suzhou Oriental Semiconductor Co. Ltd. | Semiconductor super junction power device and method of making the same |
| JP6345378B1 (en) * | 2016-08-08 | 2018-06-20 | 三菱電機株式会社 | Semiconductor device |
| CN111370494B (en) * | 2018-12-26 | 2023-07-14 | 深圳尚阳通科技股份有限公司 | Superjunction device |
| CN113488529A (en) * | 2021-07-13 | 2021-10-08 | 电子科技大学 | Super junction terminal structure based on multistage field plate |
| CN114429984B (en) * | 2022-04-07 | 2022-07-01 | 江苏长晶浦联功率半导体有限公司 | Super junction terminal structure |
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| CN1124408A (en) * | 1994-07-20 | 1996-06-12 | 电子科技大学 | Surface withstand voltage zone for semiconductor device |
| CN1744329A (en) * | 2004-08-31 | 2006-03-08 | 株式会社电装 | Semiconductor device having super junction structure and method for manufacturing the same |
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| CN101969073A (en) * | 2010-08-27 | 2011-02-09 | 东南大学 | Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor |
Family Cites Families (1)
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| JP4765012B2 (en) * | 2000-02-09 | 2011-09-07 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
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|---|---|---|---|---|
| CN1124408A (en) * | 1994-07-20 | 1996-06-12 | 电子科技大学 | Surface withstand voltage zone for semiconductor device |
| CN1744329A (en) * | 2004-08-31 | 2006-03-08 | 株式会社电装 | Semiconductor device having super junction structure and method for manufacturing the same |
| CN101840933A (en) * | 2010-04-13 | 2010-09-22 | 苏州博创集成电路设计有限公司 | Super-junction metal oxide field effect transistor with surface buffering ring terminal structure |
| CN101969073A (en) * | 2010-08-27 | 2011-02-09 | 东南大学 | Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor |
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