CN102468345A - Heterojunction barrier varactor and preparation method thereof - Google Patents
Heterojunction barrier varactor and preparation method thereof Download PDFInfo
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- CN102468345A CN102468345A CN2010105432643A CN201010543264A CN102468345A CN 102468345 A CN102468345 A CN 102468345A CN 2010105432643 A CN2010105432643 A CN 2010105432643A CN 201010543264 A CN201010543264 A CN 201010543264A CN 102468345 A CN102468345 A CN 102468345A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 162
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000005036 potential barrier Methods 0.000 claims description 45
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009194 climbing Effects 0.000 abstract description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The invention relates to a heterojunction barrier varactor and a preparation method thereof, belonging to the technical field of varactors in microwave devices. The varactor comprises two step structures from a heavily doped GaAs cap layer to a GaAs substrate and one step structure from the heavily doped GaAs cap layer to a heavily doped GaAs channel layer, wherein the three step structures are covered with a medium layer, and a lead and a PAD are arranged on the medium layer. The PAD in the heterojunction barrier varactor is positioned on a step formed by the substrate layer and the contact metal, and the connecting lead is used for respectively connecting the PAD with the cathode and the anode in a climbing mode, so that a complex air bridge structure is avoided, and the heterojunction barrier varactor is simple and convenient to manufacture and easy to realize.
Description
Technical field
The present invention relates to a kind of potential barrier of heterogenous junction varactor and preparation method thereof, belong to varactor technical field in the microwave device.
Background technology
Varactor is a kind of microwave device commonly used.Because the non-linear relation of its C-V is widely used in the design of microwave nonlinear circuit, like voltage controlled oscillator, phase shifter, frequency mixer, frequency multiplier etc.
Than traditional Schottky variable capacitance pipe, the heterojunction varactor has the C-V characteristic and the asymmetrical I-V characteristic of symmetry, and this characteristic makes the heterojunction varactor be widely used in the circuit such as frequency multiplier.The heterojunction varactor generally adopts back-to-back topology, and this structure makes potential barrier of heterogenous junction double, and has compensated structural asymmetry.
Fig. 1 is the structural representation of traditional heterojunction varactor.Heterojunction varactor PAD as shown in Figure 1, traditional, the anode and cathode metal of varactor, and their connecting line place is at grade.Material through etching lead-in wire lower zone forms channel isolation.Connect like this lead-in wire as the body of a bridge between PAD and contacting metal.Yet the body of a bridge can cause the device short circuit because body of a bridge phenomenon of rupture appears in long-time action of gravity in this structure, if increase the rigidity of the body of a bridge, can increase cost of manufacture greatly undoubtedly.
Summary of the invention
Long-time action of gravity outlet body of a bridge phenomenon of rupture the present invention is directed to body of a bridge meeting in traditional heterojunction varactor structure owing to cause the device short circuit; And the rigidity that increases the body of a bridge can increase the deficiency of cost of manufacture greatly, and a kind of potential barrier of heterogenous junction varactor and preparation method thereof is provided.
The technical scheme that the present invention solves the problems of the technologies described above is following: a kind of potential barrier of heterogenous junction varactor comprises the GaAs substrate; Be positioned at the heavy doping GaAs channel layer on the said GaAs substrate; Be positioned at least one the potential barrier of heterogenous junction structure on the said heavy doping GaAs channel layer; Be positioned at the structural heavy doping GaAs of said at least one potential barrier of heterogenous junction cap layer; Be positioned at anode and negative electrode on the said heavy doping GaAs cap layer; Said varactor has a first step structure from heavy doping GaAs cap layer to the GaAs substrate near anode away from an end of negative electrode; Said varactor has a second step structure from heavy doping GaAs cap layer to heavy doping GaAs channel layer between anode and negative electrode, said varactor is coated with dielectric layer having the 3rd ledge structure from heavy doping GaAs cap layer to the GaAs substrate near negative electrode away from an end of anode on said first step structure, second step structure and the 3rd ledge structure; The dielectric layer of the top bar terrace and the side-walls of said first step structure and the 3rd ledge structure is provided with lead-in wire, and the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure is provided with PAD.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the said heavy doping GaAs channel layer doped N-type GaAs channel layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3The said heavy doping GaAs cap layer doped N-type GaAs cap layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3
Further; Said potential barrier of heterogenous junction structure comprises the first light dope GaAs modulating layer; Be positioned at the first unadulterated GaAs resilient coating on the said first light dope GaAs modulating layer; Be positioned at the unadulterated AlGaAs barrier layer on the said first unadulterated GaAs resilient coating, be positioned at the second unadulterated GaAs resilient coating on the said unadulterated AlGaAs barrier layer, be positioned at the second light dope GaAs modulating layer on the said second unadulterated GaAs resilient coating.
Further, the said first light dope GaAs modulating layer is the first light dope N type GaAs modulating layer, and the ion of doping is Si, and the ion concentration of doping is 5 * 10
16Centimetre
-3The said second light dope GaAs modulating layer is the second light dope N type GaAs modulating layer, the ion Si of doping, and the ion concentration of doping is 5 * 10
16Centimetre
-3
The present invention also provides a kind of preparation method of potential barrier of heterogenous junction varactor, comprises the steps:
1) on the GaAs substrate, grow successively heavy doping GaAs channel layer, at least one potential barrier of heterogenous junction structure and heavy doping GaAs cap layer;
2) on said heavy doping GaAs cap layer, form metal ohmic contact, thereby process the anode and the negative electrode of varactor;
3) with removing from heavy doping GaAs cap layer to the structure at least one potential barrier of heterogenous junction structure between varactor anode and the negative electrode; Heavy doping GaAs channel layer between anode and the negative electrode is come out, thereby form second step structure from heavy doping GaAs cap layer to heavy doping GaAs channel layer;
4) the varactor two ends are removed from heavy doping GaAs cap layer to the structure the heavy doping GaAs channel layer, the GaAs substrate at varactor two ends is come out, thereby form first step structure and the 3rd ledge structure from heavy doping GaAs cap layer to the GaAs substrate;
5) form dielectric layer at the device surface that forms first step structure, second step structure and the 3rd ledge structure, simultaneously the dielectric layer of ohmic contact regions is removed, form the first lead-in wire window and the second lead-in wire window;
6) on the dielectric layer of the top bar terrace and the side-walls of the said first lead-in wire window, second lead-in wire window and first step structure and the 3rd ledge structure, form lead-in wire, on the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure, form PAD.
Further, the said heavy doping GaAs channel layer doped N-type GaAs channel layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3The said heavy doping GaAs cap layer doped N-type GaAs cap layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3
Further; Said potential barrier of heterogenous junction structure comprises the first light dope GaAs modulating layer; Be positioned at the first unadulterated GaAs resilient coating on the said first light dope GaAs modulating layer; Be positioned at the unadulterated AlGaAs barrier layer on the said first unadulterated GaAs resilient coating, be positioned at the second unadulterated GaAs resilient coating on the said unadulterated AlGaAs barrier layer, be positioned at the second light dope GaAs modulating layer on the said second unadulterated GaAs resilient coating.
Further, the said first light dope GaAs modulating layer is the first light dope N type GaAs modulating layer, and the ion of doping is Si, and the ion concentration of doping is 5 * 10
16Centimetre
-3The said second light dope GaAs modulating layer is the second light dope N type GaAs modulating layer, the ion Si of doping, and the ion concentration of doping is 5 * 10
16Centimetre
-3
The invention has the beneficial effects as follows: PAD and anode and cathode contacting metal are no longer in one plane in the potential barrier of heterogenous junction varactor of the present invention; But be on substrate layer and the contacting metal formation step; Connecting lead-in wire adopts the climbing form that PAD is connected respectively with anode and cathode; Avoided complicated air bridge structure, simple for production, be easy to realize; Parasitic capacitance between lead-in wire and the ground is little, and the C-V characteristic has good symmetric row simultaneously, can simplify the design of frequency multiplier circuit greatly; Simultaneously directly contact with sloping wall material and form short circuit for fear of connecting lead-in wire; Electroplating PAD and going between before at entire device surface deposition one dielectric layer; Open a window at anode and cathode zone passage lithographic method, making has one deck medium to isolate between lead-in wire and the sloping wall.
Description of drawings
Fig. 1 is the structural representation of traditional heterojunction varactor;
Fig. 2 forms the structural representation of channel layer, double potential barrier heterojunction structure and cap layer on substrate for embodiment of the invention potential barrier of heterogenous junction varactor;
Fig. 3 is the structural representation that embodiment of the invention potential barrier of heterogenous junction varactor forms anode and negative electrode;
Fig. 4 is embodiment of the invention potential barrier of heterogenous junction varactor forms the second step structure between cap layer and channel layer a structural representation;
Fig. 5 is embodiment of the invention potential barrier of heterogenous junction varactor forms first step structure and the 3rd ledge structure between cap layer and substrate a structural representation;
Fig. 6 is the structural representation that embodiment of the invention potential barrier of heterogenous junction varactor forms dielectric layer;
Fig. 7 is the structural representation that embodiment of the invention potential barrier of heterogenous junction varactor forms lead-in wire and PAD.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Potential barrier of heterogenous junction varactor of the present invention comprises at least one potential barrier of heterogenous junction structure, and in the present embodiment, potential barrier of heterogenous junction varactor of the present invention comprises two potential barrier of heterogenous junction structures.
Said potential barrier of heterogenous junction varactor comprises the GaAs substrate; Be positioned at the heavy doping GaAs channel layer on the said GaAs substrate; Be positioned at two potential barrier of heterogenous junction structures on the said heavy doping GaAs channel layer; Be positioned at said two the structural heavy doping GaAs of potential barrier of heterogenous junction cap layers; Be positioned at anode and negative electrode on the said heavy doping GaAs cap layer; Said varactor has a first step structure from heavy doping GaAs cap layer to the GaAs substrate near anode away from an end of negative electrode, and said varactor has a second step structure from heavy doping GaAs cap layer to heavy doping GaAs channel layer between anode and negative electrode, and said varactor has the 3rd ledge structure from heavy doping GaAs cap layer to the GaAs substrate near negative electrode away from an end of anode; The dielectric layer of the top bar terrace and the side-walls of said first step structure and the 3rd ledge structure is provided with lead-in wire, and the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure is provided with PAD.
The said heavy doping GaAs channel layer doped N-type GaAs channel layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3The said heavy doping GaAs cap layer doped N-type GaAs cap layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3Said two potential barrier of heterogenous junction structures are respectively 114 and 115; Two are cascaded; Each potential barrier of heterogenous junction structure comprises the first light dope GaAs modulating layer; Be positioned at the first unadulterated GaAs resilient coating on the said first light dope GaAs modulating layer; Be positioned at the unadulterated AlGaAs barrier layer on the said first unadulterated GaAs resilient coating, be positioned at the second unadulterated GaAs resilient coating on the said unadulterated AlGaAs barrier layer, be positioned at the second light dope GaAs modulating layer on the said second unadulterated GaAs resilient coating.The said first light dope GaAs modulating layer is the first light dope N type GaAs modulating layer, and the ion of doping is Si, and the ion concentration of doping is 5 * 10
16Centimetre
-3The said second light dope GaAs modulating layer is the second light dope N type GaAs modulating layer, the ion Si of doping, and the ion concentration of doping is 5 * 10
16Centimetre
-3
The preparation method who the present invention includes the potential barrier of heterogenous junction varactor of two potential barrier of heterogenous junction structures comprises:
Step 1): combine Fig. 2, epitaxial growth heavy doping GaAs channel layer 101, lightly doped GaAs modulating layer 102, unadulterated GaAs resilient coating 103, unadulterated AlGaAs barrier layer 104, unadulterated GaAs resilient coating 105, lightly doped GaAs modulating layer 106, unadulterated GaAs resilient coating 107, unadulterated AlGaAs barrier layer 108, unadulterated GaAs resilient coating 109, lightly doped GaAs modulating layer 110 and heavy doping GaAs cap layer 111 successively on GaAs substrate 100.
Step 2): combine Fig. 3, the method through evaporated metal on said heavy doping GaAs cap layer 111 forms metal ohmic contact, thereby processes the anode 112 and negative electrode 113 of varactor.
In the present embodiment, said metal ohmic contact is Ni/Ge/Au/Ge/Ni/Au.
Step 3): combine Fig. 4; With between varactor anode 112 and the negative electrode 113 from heavy doping GaAs cap layer 111 to the structure the lightly doped GaAs modulating layer 102 method through wet etching remove; Heavy doping GaAs channel layer 101 between anode 112 and the negative electrode 113 is come out, thereby form second step structure from heavy doping GaAs cap layer 111 to heavy doping GaAs channel layer 101.
Step 4): combine Fig. 5; The varactor two ends are removed through the method for wet etching from the structure heavy doping GaAs cap layer 111 to the heavy doping GaAs channel layer 101; The GaAs substrate 100 at varactor two ends is come out, thereby form first step structure and the 3rd ledge structure from heavy doping GaAs cap layer 111 to GaAs substrate 100.
Step 5): combine Fig. 6; At the method formation dielectric layer 121 of the device surface that forms first step structure, second step structure and the 3rd ledge structure through vapor deposition; Simultaneously the dielectric layer of ohmic contact regions is removed through the method for active ion etching, formed the first lead-in wire window 116 and the second lead-in wire window 117.
In the present embodiment, said dielectric layer is Si
3N
4Layer.
Step 6): combine Fig. 7; On the dielectric layer of the top bar terrace and the side-walls of the said first lead-in wire window 116, the second lead-in wire window 117 and first step structure and the 3rd ledge structure, form lead-in wire 118; On the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure, form PAD119, thereby the metal of anode and negative electrode is drawn.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. potential barrier of heterogenous junction varactor; It is characterized in that; Said varactor comprises the GaAs substrate; Be positioned at the heavy doping GaAs channel layer on the said GaAs substrate; Be positioned at least one the potential barrier of heterogenous junction structure on the said heavy doping GaAs channel layer, be positioned at the structural heavy doping GaAs of said at least one potential barrier of heterogenous junction cap layer, be positioned at anode and negative electrode on the said heavy doping GaAs cap layer; Said varactor has a first step structure from heavy doping GaAs cap layer to the GaAs substrate near anode away from an end of negative electrode; Said varactor has a second step structure from heavy doping GaAs cap layer to heavy doping GaAs channel layer between anode and negative electrode, said varactor is coated with dielectric layer having the 3rd ledge structure from heavy doping GaAs cap layer to the GaAs substrate near negative electrode away from an end of anode on said first step structure, second step structure and the 3rd ledge structure; The dielectric layer of the top bar terrace and the side-walls of said first step structure and the 3rd ledge structure is provided with lead-in wire, and the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure is provided with PAD.
2. potential barrier of heterogenous junction varactor according to claim 1 is characterized in that, the said heavy doping GaAs channel layer doped N-type GaAs channel layer of attaching most importance to, and the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3The said heavy doping GaAs cap layer doped N-type GaAs cap layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3
3. potential barrier of heterogenous junction varactor according to claim 1; It is characterized in that; Said potential barrier of heterogenous junction structure comprises the first light dope GaAs modulating layer; Be positioned at the first unadulterated GaAs resilient coating on the said first light dope GaAs modulating layer; Be positioned at the unadulterated AlGaAs barrier layer on the said first unadulterated GaAs resilient coating, be positioned at the second unadulterated GaAs resilient coating on the said unadulterated AlGaAs barrier layer, be positioned at the second light dope GaAs modulating layer on the said second unadulterated GaAs resilient coating.
4. potential barrier of heterogenous junction varactor according to claim 3 is characterized in that, the said first light dope GaAs modulating layer is the first light dope N type GaAs modulating layer, and the ion of doping is Si, and the ion concentration of doping is 5 * 10
16Centimetre
-3The said second light dope GaAs modulating layer is the second light dope N type GaAs modulating layer, the ion Si of doping, and the ion concentration of doping is 5 * 10
16Centimetre
-3
5. the preparation method of a potential barrier of heterogenous junction varactor is characterized in that, said preparation method comprises:
1) on the GaAs substrate, grow successively heavy doping GaAs channel layer, at least one potential barrier of heterogenous junction structure and heavy doping GaAs cap layer;
2) on said heavy doping GaAs cap layer, form metal ohmic contact, thereby process the anode and the negative electrode of varactor;
3) with removing from heavy doping GaAs cap layer to the structure at least one potential barrier of heterogenous junction structure between varactor anode and the negative electrode; Heavy doping GaAs channel layer between anode and the negative electrode is come out, thereby form second step structure from heavy doping GaAs cap layer to heavy doping GaAs channel layer;
4) the varactor two ends are removed from heavy doping GaAs cap layer to the structure the heavy doping GaAs channel layer, the GaAs substrate at varactor two ends is come out, thereby form first step structure and the 3rd ledge structure from heavy doping GaAs cap layer to the GaAs substrate;
5) form dielectric layer at the device surface that forms first step structure, second step structure and the 3rd ledge structure, simultaneously the dielectric layer of ohmic contact regions is removed, form the first lead-in wire window and the second lead-in wire window;
6) on the dielectric layer of the top bar terrace and the side-walls of the said first lead-in wire window, second lead-in wire window and first step structure and the 3rd ledge structure, form lead-in wire, on the dielectric layer at the terrace place of getting out of a predicament or an embarrassing situation of said first step structure and the 3rd ledge structure, form PAD.
6. the preparation method of potential barrier of heterogenous junction varactor according to claim 5 is characterized in that, the said heavy doping GaAs channel layer doped N-type GaAs channel layer of attaching most importance to, and the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3The said heavy doping GaAs cap layer doped N-type GaAs cap layer of attaching most importance to, the ion of doping is Si, the ion concentration of doping is 5 * 10
18Centimetre
-3
7. the preparation method of potential barrier of heterogenous junction varactor according to claim 5; It is characterized in that; Said potential barrier of heterogenous junction structure comprises the first light dope GaAs modulating layer; Be positioned at the first unadulterated GaAs resilient coating on the said first light dope GaAs modulating layer; Be positioned at the unadulterated AlGaAs barrier layer on the said first unadulterated GaAs resilient coating, be positioned at the second unadulterated GaAs resilient coating on the said unadulterated AlGaAs barrier layer, be positioned at the second light dope GaAs modulating layer on the said second unadulterated GaAs resilient coating.
8. the preparation method of potential barrier of heterogenous junction varactor according to claim 7 is characterized in that, the said first light dope GaAs modulating layer is the first light dope N type GaAs modulating layer, and the ion of doping is Si, and the ion concentration of doping is 5 * 10
16Centimetre
-3The said second light dope GaAs modulating layer is the second light dope N type GaAs modulating layer, the ion Si of doping, and the ion concentration of doping is 5 * 10
16Centimetre
-3
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341085A (en) * | 2016-09-19 | 2017-01-18 | 西南大学 | Millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor |
| CN108365020A (en) * | 2018-02-11 | 2018-08-03 | 中国工程物理研究院电子工程研究所 | A kind of GaN base hetero-junctions varactor arrangement and its epitaxial structure |
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| JPH09199735A (en) * | 1996-01-22 | 1997-07-31 | Sharp Corp | Heterojunction semiconductor device |
| JP2002280575A (en) * | 2001-03-19 | 2002-09-27 | Communication Research Laboratory | Varactor |
| WO2007128075A2 (en) * | 2006-05-08 | 2007-11-15 | Epitactix Pty Ltd | Method and apparatus for manufacture of semiconductors and resulting structures, devices, circuits, and components |
| US7696604B2 (en) * | 2007-10-23 | 2010-04-13 | International Business Machines Corporation | Silicon germanium heterostructure barrier varactor |
-
2010
- 2010-11-15 CN CN 201010543264 patent/CN102468345B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199735A (en) * | 1996-01-22 | 1997-07-31 | Sharp Corp | Heterojunction semiconductor device |
| JP2002280575A (en) * | 2001-03-19 | 2002-09-27 | Communication Research Laboratory | Varactor |
| WO2007128075A2 (en) * | 2006-05-08 | 2007-11-15 | Epitactix Pty Ltd | Method and apparatus for manufacture of semiconductors and resulting structures, devices, circuits, and components |
| US7696604B2 (en) * | 2007-10-23 | 2010-04-13 | International Business Machines Corporation | Silicon germanium heterostructure barrier varactor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341085A (en) * | 2016-09-19 | 2017-01-18 | 西南大学 | Millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor |
| CN106341085B (en) * | 2016-09-19 | 2019-03-29 | 西南大学 | Millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor |
| CN108365020A (en) * | 2018-02-11 | 2018-08-03 | 中国工程物理研究院电子工程研究所 | A kind of GaN base hetero-junctions varactor arrangement and its epitaxial structure |
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