CN102214555B - Method for thinning sapphire wafer - Google Patents
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- CN102214555B CN102214555B CN 201010145284 CN201010145284A CN102214555B CN 102214555 B CN102214555 B CN 102214555B CN 201010145284 CN201010145284 CN 201010145284 CN 201010145284 A CN201010145284 A CN 201010145284A CN 102214555 B CN102214555 B CN 102214555B
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 80
- 239000010980 sapphire Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 26
- 229910003460 diamond Inorganic materials 0.000 claims description 26
- 239000010432 diamond Substances 0.000 claims description 26
- 239000000956 alloy Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 239000008267 milk Substances 0.000 claims description 12
- 210000004080 milk Anatomy 0.000 claims description 12
- 235000013336 milk Nutrition 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 229910052580 B4C Inorganic materials 0.000 claims description 6
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000000314 lubricant Substances 0.000 claims description 3
- 239000002113 nanodiamond Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000004140 cleaning Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The invention discloses a method for thinning a sapphire wafer, which comprises the following steps: step 1: cleaning a sapphire wafer with a circuit on the front surface; step 2: uniformly coating photoresist on the front side of the sapphire wafer; and step 3: adhering the front surface of the sapphire wafer to a sapphire circular tray; and 4, step 4: mounting the sapphire circular tray on thinning equipment, and thinning the back of a sapphire wafer; and 5: carrying out rough grinding on the back of the sapphire wafer; step 6: carrying out moderate grinding on the back of the sapphire wafer; and 7: carrying out low-degree grinding on the back of the sapphire wafer; and 8: carrying out fine grinding on the back of the sapphire wafer; and step 9: polishing the back surface of the sapphire wafer; step 10: and cleaning the sapphire wafer. The invention achieves the new technological achievement of rapidness, complete wafer structure, no large physical damage, fine and smooth surface, small deformation and the total thickness of the thinned sapphire substrate wafer is less than 100 mu m.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of method of sapphire wafer being carried out attenuate.
Background technology
Gallium nitride (GaN) is as third generation semiconductor material with wide forbidden band, with its energy gap large (3.4eV), puncture voltage high (3.3MV/cm), two-dimensional electron gas high (＞10
13Cm
2), saturated electrons speed large (2.8 * 10
7Cm/s) etc. characteristic is subject to extensive concern in the world.The application of GaN on device is regarded as the most great event of 2O century 9O age semiconductor.GaN is the direct gap semiconductor material, and room temperature width in lower modern age is 3.39eV, therefore becomes in recent years the study hotspot of domestic and international semi-conducting material and opto-electronic device.But because GaN is difficult to preparation body material, thus must be on other backing material epitaxial growth film.
Have multiplely as the backing material of GaN, comprise sapphire, carborundum, silicon, magnesium oxide, zinc oxide etc., wherein sapphire becomes topmost backing material with its unique performance and high availability.Sapphire single-crystal (α-Al
20
3) have good thermal characteristics, fabulous electrical characteristic and dielectric property, and inertia is strong, and translucidus can be good, has good wearability, be a kind of multi-functional oxide crystal that integrates good optical property, physical property, mechanical performance and chemical property.Therefore, as important technology crystalline material, it is through being commonly used to the structure of epitaxial growth AlGaN/GaN HEMT.
At present, the high frequency of AlGaN/GaN HEMT device, high pressure, high temperature and high-power characteristic make it that huge prospect is arranged aspect microwave power device.Although the performance of aluminum-gallium-nitrogen/gallium nitride (AlGaN/GaN) HEMT power device (High Electron Mobility Transistor) has obtained considerable progress in recent years, especially aspect high-frequency high-power, but still have a lot of problems not solve, the heat radiation of high power device and problem with grounding are perplexing the practical and industrialization process of AlGaN/GaN HEMT always.One of method that solves important heat dissipation problem will be carried out attenuate overleaf with the wafer that is manufactured with circuit structure exactly, is less than the mirror effect of 100 μ m, makes afterwards outer layer metal, utilizes the heat conduction to play good radiating effect.
Sapphire is because the high (Mohs' hardness 9.5 of hardness, the diamond that is only second to Mohs 10.0), fragility is large, very difficult to its machining, and all chemical reaction can occur under acid or alkali environment, for the Sapphire Substrate sheet of having made complicated circuit construction at the substrate face epitaxial loayer, precision processing technology is more complicated, is the difficult problem of present primary study.As the first step of later process, attenuated polishing is determining that can front road and postchannel process be connected smoothly, and the assurance circuit performance is not degenerated, and plays the deciding factor of taking over from the past and setting a new course for the future.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of sapphire wafer is carried out the method for attenuate, to reach the requirement of Sapphire Substrate back process.
(2) technical scheme
For achieving the above object, the invention provides and a kind of sapphire wafer is carried out the method for attenuate, the method comprises:
Step 1: the sapphire wafer of making circuit in the front is cleaned;
Step 2: at the positive photoresist that evenly applies of sapphire wafer;
Step 3: the sapphire wafer front is attached on the sapphire round tray;
Step 4: the sapphire round tray is installed on the stripping apparatus, attenuate is carried out at the sapphire wafer back side;
Step 5: coarse grinding is carried out at the sapphire wafer back side;
Step 6: moderate is carried out at the sapphire wafer back side grind;
Step 7: minuent is carried out at the sapphire wafer back side grind;
Step 8: fine gtinding is carried out at the sapphire wafer back side;
Step 9: the sapphire wafer back side is polished;
Step 10: sapphire wafer is cleaned.
In the such scheme, the thickness of photoresist described in the step 2 is 3～5 μ m.
In the such scheme, described in the step 5 coarse grinding is carried out at the sapphire wafer back side and comprised: adopt the boron carbide grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜200 μ m; Boron carbide particles diameter 40～50 μ m, synthetic iron mill adopts the spiral groove striped, and plasm PH value is 7.
In the such scheme, described in the step 6 the moderate grinding is carried out at the sapphire wafer back side and comprised: adopt the diamond grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜140 μ m; Diamond particle diameter 15 μ m, the alloy iron pan adopts latticed groove striped, and plasm PH value is 7～9.5.
In the such scheme, described in the step 7 the minuent grinding is carried out at the sapphire wafer back side and comprised: adopt the diamond grinding milk, cooperate the alloy tin mill, wafer thickness is reduced to＜110 μ m; Diamond particle diameter 5 μ m, alloy tin dish adopt concentric circles groove striped, and plasm PH value is 10～12.
In the such scheme, described in the step 8 fine gtinding is carried out at the sapphire wafer back side and comprise: adopt the diamond grinding milk, cooperate alloy tin antimony mill, wafer thickness is reduced to＜100 μ m; Diamond particle diameter＜2 μ m, alloy tin antimony mill need not the groove stripeds, and plasm PH value is 10～12.
In the such scheme, described in the step 9 the sapphire wafer back side polished and comprise: adopt fine diamond lap paper, cooperate the polishing fluid that contains cold-producing medium and lubricant, pH value 7 is removed to grind and is left over damage; Adopt the nano-diamond polishing slurries, cooperate polishing flannelet, with wafer polishing to mirror effect; Artificial diamond's stone granulate is nanometer scale, and polishing flannelet need not the groove striped, and the polishing fluid pH value is 6～10.
In the such scheme, described in the step 10 sapphire wafer is cleaned the neutral organic washing agent of employing and carry out.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
The present invention is based on the semiconductor wafer thickness of Sapphire Substrate less than 100 μ m thining methods, the Sapphire Substrate that relates to is applicable in front growth multilayer GaN epitaxial structure material is arranged, epitaxial structure in growth is made the semiconductor circuit that comprises complexity, include the air bridges of large span in the circuit, and large-area electrogilding figure is arranged.The thining method that this invention adopts machinery and chemistry to combine, use the mill of the Various Complex structures such as synthetic iron, alloy tin, alloy tin antimony, diamond lap paper, polishing flannelet and the attenuate slurries that organic solvent, inorganic salts combine, reached fast, chip architecture is complete, without large physical damnification, the surface is fine and smooth, smooth, deformation is little, behind the attenuate Sapphire Substrate wafer general thickness less than the technique new results of 100 μ m.The present invention provides desirable process conditions for carrying out other semiconductor technologies at the Sapphire Substrate back side afterwards, has filled up the technological gap of Sapphire Substrate semiconductor postchannel process.
Description of drawings
Fig. 1 is the method flow diagram that sapphire wafer is carried out attenuate provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 provided by the inventionly carries out the method flow diagram of attenuate to sapphire wafer, and the method may further comprise the steps:
Step 1: the sapphire wafer of making circuit in the front is cleaned;
Step 2: at the positive photoresist that evenly applies of sapphire wafer, the thickness of photoresist is 3～5 μ m;
Step 3: the sapphire wafer front is attached on the sapphire round tray;
Step 4: the sapphire round tray is installed on the stripping apparatus, attenuate is carried out at the sapphire wafer back side;
Step 5: coarse grinding is carried out at the sapphire wafer back side, being comprised: adopt the boron carbide grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜200 μ m; Boron carbide particles diameter 40～50 μ m, synthetic iron mill adopts the spiral groove striped, and plasm PH value is 7;
Step 6: moderate is carried out at the sapphire wafer back side grind, comprising: adopt the diamond grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜140 μ m; Diamond particle diameter 15 μ m, the alloy iron pan adopts latticed groove striped, and plasm PH value is 7～9.5;
Step 7: minuent is carried out at the sapphire wafer back side grind, comprising: adopt the diamond grinding milk, cooperate the alloy tin mill, wafer thickness is reduced to＜110 μ m; Diamond particle diameter 5 μ m, alloy tin dish adopt concentric circles groove striped, and plasm PH value is 10～12;
Step 8: fine gtinding is carried out at the sapphire wafer back side, comprising: adopt the diamond grinding milk, cooperate alloy tin antimony mill, wafer thickness is reduced to＜100 μ m; Diamond particle diameter＜2 μ m, alloy tin antimony mill need not the groove stripeds, and plasm PH value is 10～12;
Step 9: the sapphire wafer back side is polished, comprising: adopt fine diamond lap paper, cooperate the polishing fluid that contains cold-producing medium and lubricant, pH value 7 is removed to grind and is left over damage; Adopt the nano-diamond polishing slurries, cooperate polishing flannelet, with wafer polishing to mirror effect; Artificial diamond's stone granulate is nanometer scale, and polishing flannelet need not the groove striped, and the polishing fluid pH value is 6～10;
Step 10: adopt neutral organic washing agent that sapphire wafer is cleaned.
The present invention has adopted the reduction process with a main frame collocation variety classes accessory, has greatly saved resource, improves in batches slurries, improved service efficiency, reach best cost effectiveness, successfully reached the requirement of Sapphire Substrate back process, prepared thickness＜100 μ m, surface thickness uniformity ± 2%, mirror effect, without secondary damage, flawless, without collapsing limit, the ultra-thin sapphire wafer of low stress.In the precision that improves equipment, in the situation of process modification refinement, can reach better technological requirement, prepare more desirable attenuate size, reach more senior polishing effect.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. one kind is carried out the method for attenuate to sapphire wafer, it is characterized in that the method comprises:
Step 1: the sapphire wafer of making circuit in the front is cleaned;
Step 2: at the positive photoresist that evenly applies of sapphire wafer;
Step 3: the sapphire wafer front is attached on the sapphire round tray;
Step 4: the sapphire round tray is installed on the stripping apparatus, attenuate is carried out at the sapphire wafer back side;
Step 5: coarse grinding is carried out at the sapphire wafer back side; Adopt the boron carbide grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜200 μ m; Boron carbide particles diameter 40～50 μ m, synthetic iron mill adopts the spiral groove striped, and plasm PH value is 7;
Step 6: moderate is carried out at the sapphire wafer back side grind; Adopt the diamond grinding milk, cooperate synthetic iron mill, wafer thickness is reduced to＜140 μ m; Diamond particle diameter 15 μ m, the alloy iron pan adopts latticed groove striped, and plasm PH value is 7～9.5;
Step 7: minuent is carried out at the sapphire wafer back side grind; Adopt the diamond grinding milk, cooperate the alloy tin mill, wafer thickness is reduced to＜110 μ m; Diamond particle diameter 5 μ m, alloy tin dish adopt concentric circles groove striped, and plasm PH value is 10～12;
Step 8: fine gtinding is carried out at the sapphire wafer back side; Adopt the diamond grinding milk, cooperate alloy tin antimony mill, wafer thickness is reduced to＜100 μ m; Diamond particle diameter＜2 μ m, alloy tin antimony mill need not the groove stripeds, and plasm PH value is 10～12;
Step 9: the sapphire wafer back side is polished; Adopt fine diamond lap paper, cooperate the polishing fluid that contains cold-producing medium and lubricant, pH value 7 is removed to grind and is left over damage; Adopt the nano-diamond polishing slurries, cooperate polishing flannelet, with wafer polishing to mirror effect; Artificial diamond's stone granulate is nanometer scale, and polishing flannelet need not the groove striped, and the polishing fluid pH value is 6～10;
Step 10: sapphire wafer is cleaned.
2. according to claim 1 sapphire wafer is carried out the method for attenuate, it is characterized in that the thickness of photoresist described in the step 2 is 3～5 μ m.
3. according to claim 1 sapphire wafer is carried out the method for attenuate, it is characterized in that, described in the step 10 sapphire wafer cleaned and adopt neutral organic washing agent to carry out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010145284 CN102214555B (en) | 2010-04-09 | 2010-04-09 | Method for thinning sapphire wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010145284 CN102214555B (en) | 2010-04-09 | 2010-04-09 | Method for thinning sapphire wafer |
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| CN102214555A CN102214555A (en) | 2011-10-12 |
| CN102214555B true CN102214555B (en) | 2013-02-06 |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508328A (en) * | 2011-11-08 | 2012-06-20 | 昆山明本光电有限公司 | Method for producing ultrathin quartz crystal phase retardation plate |
| CN102335856B (en) * | 2011-11-21 | 2013-07-24 | 重庆川仪自动化股份有限公司 | Polishing method of small-volume or ultra-thin or various specifications of gem products |
| CN102427034B (en) * | 2011-11-23 | 2013-08-07 | 中国科学院微电子研究所 | Method for carrying out mirror polishing and thinning on ultrathin GaAs wafer |
| CN102709408B (en) * | 2012-05-31 | 2015-09-09 | 东莞洲磊电子有限公司 | The manufacture method of GaAs base ultra-thin chip |
| CN103617944B (en) * | 2013-10-21 | 2016-04-27 | 中国电子科技集团公司第五十五研究所 | Based on photoresist interim bonding and go the method for bonding |
| CN104078345B (en) * | 2014-06-13 | 2016-08-24 | 北京工业大学 | A kind of ultra-thin wafers thining method |
| CN104907895B (en) * | 2015-06-16 | 2017-09-29 | 哈尔滨秋冠光电科技有限公司 | The fast processing method of sapphire double-polished chip |
| CN106409671A (en) * | 2016-07-21 | 2017-02-15 | 东莞市青麦田数码科技有限公司 | Compound-based semiconductor ultrathin substrate manufacturing method |
| CN106548925B (en) * | 2016-11-02 | 2019-03-01 | 山东浪潮华光光电子股份有限公司 | A kind of preprocess method improving reducing thin of sapphire substrate quality |
| CN111152072B (en) * | 2018-11-08 | 2022-03-11 | 无锡华润上华科技有限公司 | Method for polishing semiconductor sample |
| CN112846948B (en) * | 2019-11-28 | 2024-02-23 | 东莞新科技术研究开发有限公司 | Wafer surface processing method |
| CN111540668A (en) * | 2020-01-16 | 2020-08-14 | 中国科学院微电子研究所 | Process improvement method based on quartz glass epitaxial GaN |
| CN111508838B (en) * | 2020-01-16 | 2023-05-05 | 中国科学院微电子研究所 | Process improvement method based on silicon substrate epitaxial GaN |
| CN111216034B (en) * | 2020-02-26 | 2021-03-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN111844460B (en) * | 2020-07-08 | 2022-06-07 | 福建五克拉石业发展有限公司 | Natural marble film processing method |
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