CN101777605A - Crystalline silicon solar battery edge etching process - Google Patents
Crystalline silicon solar battery edge etching process Download PDFInfo
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- CN101777605A CN101777605A CN201010124221A CN201010124221A CN101777605A CN 101777605 A CN101777605 A CN 101777605A CN 201010124221 A CN201010124221 A CN 201010124221A CN 201010124221 A CN201010124221 A CN 201010124221A CN 101777605 A CN101777605 A CN 101777605A
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- silicon chip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the field of a solar battery manufacture process, in particular to a crystalline silicon solar battery edge etching process, which comprises the steps of edge etching and residue removal. The invention adopts a corrosive chemical pulp spray coating method for etching the edge of a silicon chip, the etching amount of the periphery of the silicon chip surface can be controlled within 0.2 mm, the PN junction loss of the silicon chip surface can be greatly lowered, the light absorption of the light absorption surface of the silicon chip can be improved, the photoelectric efficiency of batteries can be improved, the process is stable, and the control is easy.
Description
Technical field
The invention belongs to the solar cell making process field, relate in particular to a kind of crystalline silicon solar battery edge etching process.
Background technology
Carry out in the diffusion technology process at solar cell, no matter be single face diffusion or two-sided expanding, inevitably the periphery at silicon chip has also formed diffusion layer.The periphery diffusion layer makes the upper/lower electrode of battery form short-circuited conducting sleeve, must be removed so that battery positive and negative PN junction separates.Exist any small partial short-circuit that the battery parallel resistance is descended on the periphery, reverse current increases, and reduces the overall performance electrical performance of solar cell.
The edge that is adopted in the suitability for industrialized production is removed technology and is mainly contained dry plasma etching technics, wet chemical etching technique method and laser limit method at quarter etc. at present.Dry plasma etch technology is the alternating action by fluorine and oxygen under the glow discharge condition, silicon chips periphery is carried out etching, this process method equipment cost is relatively low, but the etch amount to battery front side (extinction face) is bigger, usually front surface is etched in about 1-2mm, and the photoelectric current loss is relatively large.The corrosive liquid that the wet chemical etching technique method is to use nitric acid, hydrofluoric acid to form is corroded silicon chip edge, have the big problem of positive etch amount equally, and equipment cost is higher relatively.Another method is to adopt laser means to carry out etching to reach the purpose that the positive and negative PN junction separates at battery edge, the positive etch amount of this kind method is less, technology stability is good, but because laser descends battery performance to the fire damage of silicon chip, so less use in the suitability for industrialized production.
Therefore need a kind of solar battery edge that is fit to suitability for industrialized production more and remove technology, produce the solar cell that can obtain higher cell photoelectric conversion efficiency.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of crystalline silicon solar battery edge etching process at the defective of above-mentioned existence, the present invention adopts spraying aggressive chemistry slurry methods that silicon chip edge is carried out etching, etch amount around the silicon chip surface can be controlled in the 0.2mm, can reduce the loss of silicon chip surface PN junction greatly, increase the light absorption of silicon chip extinction face, improve the photoelectric efficiency of battery, process stabilizing is easy to control.
A kind of crystalline silicon solar battery edge etching process of the present invention, technical scheme is: comprise edge etching and residue removing step, it is characterized in that, the use ink-jet apparatus is sprayed at the diffusion back with the corrosivity slurry and removes around the silicon chip surface of phosphorosilicate glass, then silicon chip is carried out drying, use the residue at deionized water cleaning silicon chip edge again.
By ink-jet apparatus control slurry quantity for spray and edge corrosion scope, the corrosivity slurry is sprayed at the diffusion back and removes around the silicon chip surface of phosphorosilicate glass, edge corrosion is controlled in the 0.2mm scope; It is 3-5min under the 150-200 ℃ of condition that the silicon chip that is coated with corrosive slurry is placed temperature; Oven dry back silicon chip deionized water rinsing 5-10min.
Described corrosivity slurry is for containing the alkaline corrosion slurry of 10-20% Tetramethylammonium hydroxide (TMAH).
Beneficial effect of the present invention is: adopt spraying aggressive chemistry slurry methods that silicon chip edge is carried out etching, can fine control battery edge etch amount, etch amount around the surface can be controlled in the 0.2mm, can reduce the loss of silicon chip surface PN junction greatly, reduce the loss of cell photoelectric stream, increase the light absorption of silicon chip extinction face, keep higher battery parallel resistance simultaneously.Improve the photoelectric efficiency of battery.Process stabilizing is easy to control, is applicable to suitability for industrialized production.
Embodiment:
In order to understand the present invention better, describe technical scheme of the present invention in detail with instantiation below, but invention is not limited thereto.
A kind of crystalline silicon solar battery edge etching process of the present invention, technical scheme is: comprise edge etching and residue removing step, by ink-jet apparatus control slurry quantity for spray and edge corrosion scope, the corrosivity slurry is sprayed at diffusion back and removes around the silicon chip surface of phosphorosilicate glass, edge corrosion is controlled in the 0.2mm scope; It is 3-5min under the 150-200 ℃ of condition that the silicon chip that is coated with corrosive slurry is placed temperature; Oven dry back silicon chip deionized water rinsing 5-10min.
Described corrosivity slurry is for containing the alkaline corrosion slurry of 10-20% Tetramethylammonium hydroxide (TMAH).
Embodiment 1
The silicon chip front surface (silicon chip extinction one side) that uses ink-jet apparatus that the corrosivity slurry is sprayed at the diffusion back and remove phosphorosilicate glass all around, the corrosivity slurry is for containing the alkaline corrosion slurry of 10-20% Tetramethylammonium hydroxide (TMAH); By ink-jet apparatus control slurry quantity for spray and edge corrosion scope, edge corrosion is controlled in the 0.2mm scope; It is 5min under 200 ℃ of conditions that the silicon chip that is coated with corrosive slurry is placed temperature; Oven dry back silicon chip deionized water rinsing 10min.
Embodiment 2
Use ink-jet apparatus the corrosivity slurry to be sprayed at around the anti-surface of silicon chip of spreading the back and removing phosphorosilicate glass (another side of silicon chip extinction face), the corrosivity slurry is for containing the alkaline corrosion slurry of 10-20% Tetramethylammonium hydroxide (TMAH); By ink-jet apparatus control slurry quantity for spray and edge corrosion scope, edge corrosion is controlled in the 0.2mm scope; It is 4min under 180 ℃ of conditions that the silicon chip that is coated with corrosive slurry is placed temperature; Oven dry back silicon chip deionized water rinsing 6min.
Application mode of the present invention can be adjusted according to actual conditions, is not to be used for limiting the present invention.
Claims (3)
1. crystalline silicon solar battery edge etching process, comprise edge etching and residue removing step, it is characterized in that, the use ink-jet apparatus is sprayed at the diffusion back with the corrosivity slurry and removes around the silicon chip surface of phosphorosilicate glass, then silicon chip is carried out drying, use the residue at deionized water cleaning silicon chip edge again.
2. a kind of crystalline silicon solar battery edge etching process according to claim 1, it is characterized in that, concrete steps are, by ink-jet apparatus control slurry quantity for spray and edge corrosion scope, the corrosivity slurry is sprayed at diffusion back and removes around the silicon chip surface of phosphorosilicate glass, edge corrosion is controlled in the 0.2mm scope; It is 3-5min under the 150-200 ℃ of condition that the silicon chip that is coated with corrosive slurry is placed temperature; Oven dry back silicon chip deionized water rinsing 5-10min.
3. a kind of crystalline silicon solar battery edge etching process according to claim 1 and 2 is characterized in that, described corrosivity slurry is for containing the alkaline corrosion slurry of 10-20% tetramethyl aqua ammonia (TMAH).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010124221A CN101777605A (en) | 2010-03-15 | 2010-03-15 | Crystalline silicon solar battery edge etching process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010124221A CN101777605A (en) | 2010-03-15 | 2010-03-15 | Crystalline silicon solar battery edge etching process |
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| CN101777605A true CN101777605A (en) | 2010-07-14 |
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| CN201010124221A Pending CN101777605A (en) | 2010-03-15 | 2010-03-15 | Crystalline silicon solar battery edge etching process |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034903A (en) * | 2010-11-09 | 2011-04-27 | 苏州矽美仕绿色新能源有限公司 | Method for treating electric leakage of surface of silicon solar battery |
| CN103094409A (en) * | 2011-11-08 | 2013-05-08 | 浚鑫科技股份有限公司 | Edge etching process applied to polycrystalline silicon solar cell |
| CN103500771A (en) * | 2013-09-06 | 2014-01-08 | 江苏爱多光伏科技有限公司 | Technological method for manufacturing polysilicon solar cell in back edge isolation mode |
| CN104051562A (en) * | 2013-03-13 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip surface treatment apparatus |
| CN104245220A (en) * | 2012-01-31 | 2014-12-24 | 太阳能公司 | Laser system with multiple laser pulses for fabrication of solar cells |
| CN106206785A (en) * | 2015-04-09 | 2016-12-07 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN106384758A (en) * | 2016-10-13 | 2017-02-08 | 常州天合光能有限公司 | Solar cell edge cutting method with edge leakage prevention |
| CN106531840A (en) * | 2015-09-15 | 2017-03-22 | 上海神舟新能源发展有限公司 | Positive and negative electrode isolation process for solar cell |
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| JP2002314106A (en) * | 2001-04-09 | 2002-10-25 | Sinto Brator Co Ltd | Method of finishing solar cell panel |
| CN101276789A (en) * | 2008-05-07 | 2008-10-01 | 李毅 | Method and ink for etching amorphous silicon solar battery aluminum membrana |
| CN101528884A (en) * | 2006-11-01 | 2009-09-09 | 默克专利股份有限公司 | Etching paste containing particles for silicon surfaces and layers |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
| CN101604711A (en) * | 2009-06-08 | 2009-12-16 | 无锡尚德太阳能电力有限公司 | A kind of preparation method of solar cell and the solar cell for preparing by this method |
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2010
- 2010-03-15 CN CN201010124221A patent/CN101777605A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002314106A (en) * | 2001-04-09 | 2002-10-25 | Sinto Brator Co Ltd | Method of finishing solar cell panel |
| CN101528884A (en) * | 2006-11-01 | 2009-09-09 | 默克专利股份有限公司 | Etching paste containing particles for silicon surfaces and layers |
| CN101276789A (en) * | 2008-05-07 | 2008-10-01 | 李毅 | Method and ink for etching amorphous silicon solar battery aluminum membrana |
| CN101604711A (en) * | 2009-06-08 | 2009-12-16 | 无锡尚德太阳能电力有限公司 | A kind of preparation method of solar cell and the solar cell for preparing by this method |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034903A (en) * | 2010-11-09 | 2011-04-27 | 苏州矽美仕绿色新能源有限公司 | Method for treating electric leakage of surface of silicon solar battery |
| CN103094409A (en) * | 2011-11-08 | 2013-05-08 | 浚鑫科技股份有限公司 | Edge etching process applied to polycrystalline silicon solar cell |
| CN103094409B (en) * | 2011-11-08 | 2016-04-06 | 中建材浚鑫科技股份有限公司 | A kind of edge etching process being applied to polysilicon solar cell |
| CN104245220A (en) * | 2012-01-31 | 2014-12-24 | 太阳能公司 | Laser system with multiple laser pulses for fabrication of solar cells |
| CN104051562A (en) * | 2013-03-13 | 2014-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip surface treatment apparatus |
| CN104051562B (en) * | 2013-03-13 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon chip surface treatment apparatus |
| CN103500771A (en) * | 2013-09-06 | 2014-01-08 | 江苏爱多光伏科技有限公司 | Technological method for manufacturing polysilicon solar cell in back edge isolation mode |
| CN103500771B (en) * | 2013-09-06 | 2016-08-17 | 江苏爱多光伏科技有限公司 | Dorsal edge isolation method prepares the process of polycrystalline silicon solar cell |
| CN106206785A (en) * | 2015-04-09 | 2016-12-07 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN106531840A (en) * | 2015-09-15 | 2017-03-22 | 上海神舟新能源发展有限公司 | Positive and negative electrode isolation process for solar cell |
| CN106384758A (en) * | 2016-10-13 | 2017-02-08 | 常州天合光能有限公司 | Solar cell edge cutting method with edge leakage prevention |
| CN106384758B (en) * | 2016-10-13 | 2017-07-28 | 常州天合光能有限公司 | A kind of solar cell of anti-edge current leakage carves side method |
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Open date: 20100714 |