CN101208811A - Semiconductor light-emitting device - Google Patents

Abstract

Disclosed is a semiconductor light-emitting device (10) comprising a semiconductor chip (12) which emits light having a wavelength from blue to ultraviolet region, and a sealing unit (16) formed in at least a part of the path where the light passes through. The sealing unit (16) contains a sealing material (16d) composed of a composite material, and a fluorescent material (16c). The composite material contains a base material (16a) composed of a resin and fine particles (16b) which are dispersed in the base material (16a) and composed of an inorganic material having an effective particle diameter of not more than one fourth of the wavelength of the light inside the base material (16a).

Description

Semiconductor light-emitting apparatus

Technical field

[0001] the present invention relates to a kind of with LED (Light Emitting Diode: the semiconductor light-emitting apparatus that forms of semiconductor die packageization such as chip light-emitting diode).

Background technology

[0002] in recent years, the white light LEDs device is practical, receives much concern as the illuminace component that replaces fluorescent lamp.

[0003] people developed employing gallium nitride (GaN) compound semiconductor, the blue light-emitting district is to the led chip of the light of ultraviolet region, this has promoted the practicability of white light LEDs device.

[0004] utilizes the blue light-emitting district to obtain the method for white light, mainly contain two kinds (for example, with reference to non-patent literature 1 to the led chip of the light of ultraviolet region.): the first, be to utilize blue light that blue-light LED chip radiates and the method that obtains white light with the gold-tinted that blue-light excited cerium doped yttrium aluminum garnet fluorescent materials such as (YAG:Ce) obtains; The second, be with optical excitation that led chip the radiated multiple fluorescent material of blue light district to the light of ultraviolet region, obtain red, green and blue these so-called trichromatic light, obtain the method for white light.Y ₂O ₂S:Eu (abbreviating P22-RE3 as) is used as the ruddiness fluorescent material.ZnS:Cu, Al (abbreviating P22-GN4 as) or (Ba, Mg) Al ₁₀O ₁₇: Eu, Mn (abbreviating LP-G3 as) is used as the green glow fluorescent material.(Sr, Ca, Ba, Mg) ₁₀(PO ₄) ₆C ₁₂: Eu (abbreviating LP-B1 as) or (Ba, Mg) Al ₁₀O ₁₇: Eu (abbreviating LP-B4 as) is used as the blue light fluorescent material.

[0005] white light LEDs device is by with the sealing resin material blue light-emitting district being realized to the led chip and the described fluorescent material encapsulationization of the light of ultraviolet region.As representative packaged type, have the sealing resin material is formed the structure of bullet cut (for example, with reference to non-patent literature 2.)。

[0006] below,, the existing white light LEDs device with bullet cut encapsulation shape is described with reference to Figure 45.

[0007] as shown in figure 45, in the related white light LEDs device 100 of conventional example, the blue light-emitting district is fixed on the bottom surface of chip mat (die pad) portion with pastes 103 by chips such as paste (paste) shape ag material or pasty state insulating material are fixing to the led chip 102 of the light of ultraviolet region, and this chip mat is arranged on the end of the first lead frame 101A and is bowl-shape.

[0008] on the upper surface of led chip 102, is formed with the first electrode 104A and the second electrode 104B.The first electrode 104A is electrically connected with the first lead frame 101A by the first metal wire 105A, the second electrode 104B by the second metal wire 105B with and the first lead frame 101A be made into the second right lead frame 101B and be electrically connected.

[0009] led chip 102, are shaped as resin material 105 sealings of shell shape.Generally with epoxy resin or silicones etc. to the resin material of visible transparent as resin material 105.In resin material 105, be mixed with described fluorescent material 106 (for example, with reference to patent documentation 1).

Non-patent literature 1: No. the 99th, only friendly delegation and other work " Mitsubishi's electric wire industry Times ", in July, 2002, the 35th to the 41st page

Non-patent literature 2: No. the 53rd, this victory of China fir and other works " SUNX skill newspaper ", No.1, the 4th to the 9th page

Patent documentation 1: Japanese publication communique spy opens the 2004-71908 communique

Patent documentation 2: Japanese publication communique spy opens the 2005-93724 communique

[0010] yet, in that above-mentioned existing white light LEDs device 100 is adopted under epoxy resin or the situation of silicones as sealing resin material 105, following problems can appear.

[0011] under the situation that adopts epoxy resin, has epoxy resin and become yellow problem.In other words,, blue light region 102 that radiate by led chip makes the epoxy resin yellowing to the light of ultraviolet region, and the luminosity that makes white light LEDs device 100 be sent out can lower, and tone can change.Given this, sealing resin material 105 needs light resistance and thermal endurance.

[0012] under the fixing situation about being made of resin with pastes 103 of chip, the light that led chip 102 is radiated can make chip fix with pastes 103 variable colors, makes luminosity to lower, and luminous intensity can worsen.This also is a problem.

[0013] and, from light outside incident, ultraviolet region the resin material 105 and the fluorescent material 106 that constitute semiconductor light-emitting apparatus are worsened, even can make also that the chip that is made of resin is fixing to be worsened with pastes 103.This also is a problem.

[0014] on the other hand, silicones has following problems, that is: because compare with epoxy resin, silicones optical index lower, so total reflection takes place the light that led chip 102 is radiated easily, make that the light extraction efficiency that extracts from led chip 102 is lower (for example, with reference to patent documentation 2.)。

[0015] remark additionally because and the refractive index of led chip (particularly gallium nitride semiconductor) by comparison, the refractive index of epoxy resin is very low, so even using under the situation of epoxy resin, also should not be that light extraction efficiency is enough high.

[0016] be not only to send emission wavelength at the led chip of blue light region to the light of ultraviolet region, the emission wavelength led chip longer than blue light should not be that light extraction efficiency is enough high yet.

Summary of the invention

[0017] the present invention, described problem researchs and develops out in order to solve just.Its purpose is: seek the raising of light resistance, thermal endurance and the light extraction efficiency of encapsulant that the semiconductor chip that is formed with light-emitting component is sealed.

[0018] in order to reach above-mentioned purpose, be made as following structure in the present invention, that is: the basis material of the sealing that constitutes semiconductor light-emitting apparatus is comprised constitute by inorganic material, effective grain size is at the particle below 1/4th of emission wavelength.

[0019] particularly, first semiconductor light-emitting apparatus involved in the present invention, comprise emit wavelength blue light region to the semiconductor chip of the light of ultraviolet region and be formed on that light passes through pass through sealing at least a portion zone on the path; Sealing comprises encapsulant and fluorescent material, the sealing material is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, has been dispersed in this basis material, and the effective grain size of described particle is below 1/4th of light wavelength of basis material inside.

[0020],, increases so compare the light resistance and the thermal endurance of sealing with the situation that does not comprise the described particle that constitutes by inorganic material because the particle that has been dispersed in the basis material of sealing is made of inorganic material according to first semiconductor light-emitting apparatus.And, because the effective grain size that has been dispersed in the particle in the basis material below 1/4th of light wavelength that semiconductor chip radiated, so can not damage the transparency of sealing, can not cause harmful effect to light extraction efficiency in other words.Remark additionally, if the size of particle is fully less than light wavelength, just the composite material that is dispersed with inorganic particulate can be regarded as does not have the medium refractive index deviation, homogeneous.If the diameter of particle is below 1/4th of light wavelength, the scattering of light in the composite material just has only Rayleigh scattering, thereby the situation that light transmission worsens seldom occurs.

[0021] preferably such, in first semiconductor light-emitting apparatus, sealing form cover semiconductor chip around.

[0022] like this, the mechanical strength of sealing is just very big, and thermal endurance also increases, and is difficult for producing peeling off and the crack of sealing.

[0023] preferably such, in first semiconductor light-emitting apparatus, sealing forms with semiconductor chip and contacts.

[0024] under sealing and situation that semiconductor chip contacts as mentioned above, the difference of comparing the mutual thermal coefficient of expansion of sealing and semiconductor chip with the structure that the basis material that makes sealing does not comprise particle is littler, so sealing also is difficult for producing peeling off and the crack.

[0025] preferably such, in first semiconductor light-emitting apparatus, sealing is made of first sealing and second sealing, and this first sealing is made of encapsulant; This second sealing is formed on the outside of this first sealing, comprises fluorescent material.

[0026] as mentioned above, by first seal portion configurations that will constitute by encapsulant for composite material from the nearer therefore higher part of optical density of semiconductor chip, can realize from semiconductor chip light extraction efficiency that extract, very high, and can access very strong light resistance and thermal endurance.And, from the far away and therefore lower part of optical density of semiconductor chip, can improve the light transmission of second sealing by second seal portion configurations that the transparency is better than composite material and comprises fluorescent material.Consequently, can improve the light extraction efficiency that extracts from semiconductor light-emitting apparatus.

[0027] preferably such, under the situation that first sealing is made of composite material, described semiconductor light-emitting apparatus also comprise the semiconductor chip that is arranged in first sealing below at least and side, allow the reflection part of light reflection.

[0028] like this, the particle that is contained in the composite material that constitutes first sealing that is arranged in semiconductor chip one side is with regard to the spectrum decay that makes blue light region to ultraviolet region as described below, and the spectrum of short wavelengths such as red light district one side relatively increases.In this manual, this phenomenon is called filtering effect.By utilizing filtering effect, general color rendering index (Ra) raises, and can reduce colour temperature.

Say again that [0029] preferably so in this case, encapsulant is with the bottom that pastes is being fixed semiconductor chip and the member supporting that is reflected (underlyinglayer) with transparency.

[0030] as mentioned above because fixedly the pastes of semiconductor chip is transparent, so even with composite material as bottom, general color rendering index (Ra) and can reduce colour temperature because the filtering effect that particle brought that is contained in the bottom also raises.

[0031] preferably such, in first semiconductor light-emitting apparatus, sealing is made of first sealing and second sealing, and this first sealing is made of encapsulant; This second sealing is formed on the outside of this first sealing.Particle is made of the material of the light that absorbs ultraviolet region.

[0032] like this, can suppress the phenomenon that ultraviolet light worsens the encapsulant that is made of resin etc. by being contained in particle in the composite material that constitutes first sealing, that absorb the light of ultraviolet region.

[0033] preferably such, in first semiconductor light-emitting apparatus, sealing is made of first sealing and second sealing, and this first sealing comprises fluorescent material; This second sealing is formed on the outside of this first sealing, is made of encapsulant.

[0034] like this, the particle that composite material comprised that constitutes second sealing in the outside be formed on first sealing makes the spectrum decay of blue light region to ultraviolet region, can access the filtering effect that the spectrum of short wavelength's one side such as red light district relatively increases.Like this, just can improve general color rendering index (Ra), and reduce colour temperature.

[0035] second semiconductor light-emitting apparatus involved in the present invention, what comprise the semiconductor chip of emitting light and be formed on that light passes through passes through sealing at least a portion zone on the path.Sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of light wavelength of basis material inside, and described sealing is made of first sealing that covers semiconductor chip and second sealing that is formed on the outside of this first sealing.First sealing, according to first refractive index of light wavelength decision, be higher than second sealing, according to second refractive index of light wavelength decision.

[0036] according to second semiconductor light-emitting apparatus, because it is the same with first semiconductor light-emitting apparatus, sealing comprise by inorganic material constitute, be dispersed in the basis material and effective grain size at the particle below 1/4th of the light wavelength of basis material inside, so the light resistance of sealing and thermal endurance improve, and can not cause harmful effect to the transparency of sealing.And, because first refractive index according to the light wavelength decision of first sealing is higher than second refractive index according to the light wavelength decision of second sealing, so the refractive index of whole sealing is higher in the medial region that is positioned at semiconductor chip one side, and lower in the exterior lateral area in the outside that is positioned at this medial region.Therefore, the refractive index of exterior lateral area is lower, makes the total reflection of emergent light of semiconductor chip institute outgoing lower, and light extraction efficiency improves as a result.

[0037] preferably such, in second semiconductor light-emitting apparatus, the composition that is contained in the particle in first sealing is different with the composition of particle in being contained in second sealing.

[0038] like this, for example have the particle that refractive index is higher than the composition of the refractive index that is contained in the particle in second sealing, just can positively make the refractive index of first sealing be higher than the refractive index of second sealing by first sealing is comprised.

[0039] preferably such, in second semiconductor light-emitting apparatus, the shared ratio in composite material of the particle in first sealing is higher than particle in second sealing shared ratio in composite material.

[0040] like this, can positively make the refractive index of first sealing be higher than the refractive index of second sealing.

[0041] the 3rd semiconductor light-emitting apparatus involved in the present invention, what comprise the semiconductor chip of emitting light and be formed on that light passes through passes through sealing at least a portion zone on the path.Sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of light wavelength of basis material inside, and, be set at from from the near medial region of semiconductor chip zone step-down gradually laterally according to the refractive index of light wavelength decision.

[0042] according to the 3rd semiconductor light-emitting apparatus, because it is the same with first semiconductor light-emitting apparatus, sealing comprise by inorganic material constitute, be dispersed in the basis material and effective grain size at the particle below 1/4th of the light wavelength of basis material inside, so the light resistance of sealing and thermal endurance improve, and can not cause harmful effect to the transparency of sealing.And, because be set at from from the near medial region of semiconductor chip zone step-down gradually laterally according to the refractive index of light wavelength decision, so the refractive index of whole sealing is higher in the medial region that is positioned at semiconductor chip one side, and lower in the exterior lateral area in the outside that is positioned at this medial region.Therefore, the refractive index of exterior lateral area is lower, makes the total reflection of emergent light of semiconductor chip institute outgoing lower, and light extraction efficiency improves as a result.

[0043] preferably such, in the 3rd semiconductor light-emitting apparatus, in sealing, the particle shared ratio in composite material in the nearer medial region of semiconductor chip is higher than described particle in the exterior lateral area in the outside that is in this medial region shared ratio in composite material.

[0044] like this, can positively make the refractive index of the medial region in the sealing be higher than the refractive index of exterior lateral area.

[0045] preferably such, in the 3rd semiconductor light-emitting apparatus, in the particle in being contained in sealing, the composition of particle of inboard that is contained in sealing is different with the composition of the particle in the outside that is contained in sealing.

[0046] like this, for example comprise and have the particle of composition that refractive index is higher than the refractive index of the particle in the exterior lateral area that is contained in sealing, just can positively make the refractive index of the medial region in the sealing be higher than the refractive index of exterior lateral area by the medial region that makes sealing.

[0047] the 4th semiconductor light-emitting apparatus involved in the present invention, what comprise the semiconductor chip of emitting light and be formed on that light passes through passes through sealing at least a portion zone on the path.Sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of light wavelength of basis material inside, and sealing is made of first sealing that covers semiconductor chip and second sealing that is formed on the outside of this first sealing.Second sealing comprises and is used as particle particle, that be made of the material of the light that absorbs ultraviolet region.

[0048] according to the 4th semiconductor light-emitting apparatus, be used as particle described particle, that constitute by the material of the light that absorbs ultraviolet region because second sealing comprises, suppress unwanted ultraviolet light under the situation of wavelength components of ultraviolet region and emitted so can comprise at the light that semiconductor chip is emitted.In addition, also can make the particle that is added in second sealing absorb ultraviolet light, therefore can prevent the deterioration of encapsulant etc. from outside incident.

[0049] preferably such, in the 4th semiconductor light-emitting apparatus, second sealing forms: the top, below and the side that cover semiconductor chip.

[0050] the 5th semiconductor light-emitting apparatus, comprise that emit wavelength is at the semiconductor chip of blue light region to the light of ultraviolet region, what be formed on that light passes through passes through sealing at least a portion zone on the path, the support component of support semiconductor chip, and pastes fixedly semiconductor chip and support component, that have the transparency.Pastes is made of the composite material that comprises basis material and particle, and described particle is made of inorganic material, has been dispersed in this basis material, and the effective grain size of described particle is below 1/4th of light wavelength of basis material inside.Particle is made of the material of the light that absorbs ultraviolet region.

[0051] according to the 5th semiconductor light-emitting apparatus, because pastes fixedly semiconductor chip and support component, that have the transparency is made of the composite material that comprises the particle that inorganic material constitutes, described particle is made of the material of the light that absorbs ultraviolet region, worsen and variable color owing to the influence of ultraviolet light so can suppress pastes, make the phenomenon that luminosity lowers.Because pastes is transparent, so the light transmission pastes that semiconductor chip can be emitted outputs to the outside.Therefore, light extraction efficiency improves.In addition, the heat that semiconductor chip produced improves by the pastes that is made of composite material to the exothermicity of support component heat release.

[0052] preferably such, in the second or the 3rd semiconductor light-emitting apparatus, sealing comprises fluorescent material.

[0053] like this, just can be excitation fluorescent material under the situation of light of blue light region or ultraviolet region at the emergent light of semiconductor chip institute outgoing, obtain white light.

[0054] preferably such, in first to the 3rd semiconductor light-emitting apparatus, particle is made of inorganic compound.

[0055] like this, can increase the kind of the material that can select, be used for improving light resistance, thermal endurance or mechanical strength.

[0056] preferably such, in first to the 3rd semiconductor light-emitting apparatus, basis material is made of resin material.

[0057] like this, the formability of sealing just improves.

[0058] in this case, resin material is inorganic macromolecule material preferably.Like this, just can easily improve light resistance and thermal endurance.

[0059] or, in this case, resin material is high-molecular organic material preferably.Like this, just can easily improve formability.

[0060] preferably such, in first to the 3rd semiconductor light-emitting apparatus, basis material is made of the material to visible transparent.

[0061] like this, the transparency of sealing just further improves.Therefore, light extraction efficiency further improves.

[0062] preferably such, in first to the 3rd semiconductor light-emitting apparatus, composite material is to visible transparent.

[0063] like this, the transparency of sealing just further improves.Therefore, light extraction efficiency further improves.

[0064] preferably such, in first to the 3rd semiconductor light-emitting apparatus, the refractive index according to light wavelength decision of particle is higher than the refractive index according to the light wavelength decision of basis material, and equates with the refractive index of semiconductor chip or below the refractive index of this semiconductor chip.

[0065] like this, the refractive index of just comparing sealing with the situation of not adding particle is higher, thereby light extraction efficiency further improves.

[0066] preferably such, in first to the 3rd semiconductor light-emitting apparatus, particle in composite material shared percent by volume more than 5% and below 60%.

[0067] like this, can under the state of the transparency of guaranteeing composite material fully, improve the light resistance and the thermal endurance of this composite material.Remark additionally, be more preferably particle in composite material shared percent by volume more than 10% and below 50%, than above-mentioned both be more preferably particle in composite material shared percent by volume more than 20% and below 40%.

[0068] preferably such, in the first or the 3rd semiconductor light-emitting apparatus, the profile of sealing is hemispherical.

[0069] like this, can improve the effect of the total reflection that emergent light caused that suppresses the outgoing of semiconductor chip institute.

[0070] preferably such, in the first or the 3rd semiconductor light-emitting apparatus, the cross-sectional profile of sealing is quadrangle.

[0071] like this, just can utilize print process etc. to coat the encapsulant that constitutes by composite material, can easily form.And, because upper surface is made of the plane, so can easily be used as device.

[0072] preferably such, have under the situation of first sealing and second sealing at first semiconductor light-emitting apparatus or in the 3rd semiconductor light-emitting apparatus, the profile of first sealing and second sealing is hemispherical.

[0073] preferably such, have at first semiconductor light-emitting apparatus under the situation of first sealing and second sealing or in the 3rd semiconductor light-emitting apparatus, the cross-sectional profile of first sealing is quadrangle, and the profile of second sealing is hemispherical.

[0074] preferably such, have at first semiconductor light-emitting apparatus under the situation of first sealing and second sealing or in the 3rd semiconductor light-emitting apparatus, the cross-sectional profile of first sealing and second sealing is quadrangle.

[0075] preferably such, have under the situation of first sealing and second sealing at first semiconductor light-emitting apparatus or in the 3rd semiconductor light-emitting apparatus, the profile of first sealing is hemispherical, the cross-sectional profile of second sealing is quadrangle.

[0076] preferably such, first to the 3rd semiconductor light-emitting apparatus also comprises: be arranged in the zone of side of the semiconductor chip in the sealing, allow the reflection part of light reflection.

[0077] like this, light extraction efficiency further improves.

[0078] preferably such, in this case, the section shape of sealing is following narrow and back taper last hem width.

The effect of-invention-

[0079], can realize the semiconductor light-emitting apparatus such as white light LEDs that long service life and brightness are high according to semiconductor light-emitting apparatus of the present invention.

Description of drawings

[0080] Fig. 1 is the profile of signal, the related semiconductor light-emitting apparatus of the expression first embodiment of the present invention.

Fig. 2 is a profile, amplifies and sealing in the related semiconductor light-emitting apparatus of the expression first embodiment of the present invention.

Fig. 3 is a chart, is used for illustrating the effective grain size of the particulate that the sealing in the related semiconductor light-emitting apparatus of first embodiment is added.

Fig. 4 is a chart, represents the refractive index of the sealing (composite material) in the related semiconductor light-emitting apparatus of the first embodiment of the present invention and the relation between the particulate addition (volume ratio).

Fig. 5 is the profile of signal, the related semiconductor light-emitting apparatus of the expression second embodiment of the present invention.

Fig. 6 is the profile of signal, the related semiconductor light-emitting apparatus of the expression third embodiment of the present invention.

Fig. 7 is the profile of signal, the related semiconductor light-emitting apparatus of the expression fourth embodiment of the present invention.

Fig. 8 is the profile of signal, the related semiconductor light-emitting apparatus of the expression fifth embodiment of the present invention.

Fig. 9 (a) obtains the chart that the relation between the rate of change of total light flux of the refractive index of sealing and emergent light is done for the material of every kind of substrate that constitutes the led chip in the related semiconductor light-emitting apparatus of the fifth embodiment of the present invention by analogue test; Fig. 9 (b) obtains the refractive index of sealing and the chart that the relation between the total light flux is done for every kind of material that constitutes the substrate of the led chip in the related semiconductor light-emitting apparatus of the fifth embodiment of the present invention by analogue test.

Figure 10 is the profile of signal, the related semiconductor light-emitting apparatus of the expression sixth embodiment of the present invention.

Figure 11 is the profile of signal, the related semiconductor light-emitting apparatus of first variation of the expression sixth embodiment of the present invention.

Figure 12 is the profile of signal, the related semiconductor light-emitting apparatus of second variation of the expression sixth embodiment of the present invention.

Figure 13 is the profile of signal, the related semiconductor light-emitting apparatus of the 3rd variation of the expression sixth embodiment of the present invention.

Figure 14 is the profile of signal, the related semiconductor light-emitting apparatus of the 4th variation of the expression sixth embodiment of the present invention.

Figure 15 (a) and Figure 15 (b) obtain the various refractive indexes of first sealing and second sealing and the chart that the relation between the light extraction efficiency is done by analogue test to the related semiconductor light-emitting apparatus of the 4th variation of the sixth embodiment of the present invention.

Figure 16 is the profile of signal, the related semiconductor light-emitting apparatus of the 5th variation of the expression sixth embodiment of the present invention.

Figure 17 is the profile of signal, the related semiconductor light-emitting apparatus of the 6th variation of the expression sixth embodiment of the present invention.

Figure 18 is the profile of signal, the related semiconductor light-emitting apparatus of the 7th variation of the expression sixth embodiment of the present invention.

Figure 19 is the profile of signal, the related semiconductor light-emitting apparatus of the expression seventh embodiment of the present invention.

Figure 20 is the profile of signal, the related semiconductor light-emitting apparatus of first variation of the expression seventh embodiment of the present invention.

Figure 21 is the profile of signal, the related semiconductor light-emitting apparatus of second variation of the expression seventh embodiment of the present invention.

Figure 22 is the profile of signal, the related semiconductor light-emitting apparatus of the 3rd variation of the expression seventh embodiment of the present invention.

Figure 23 is the profile of signal, the related semiconductor light-emitting apparatus of the 4th variation of the expression seventh embodiment of the present invention.

Figure 24 is the profile of signal, the related semiconductor light-emitting apparatus of the 5th variation of the expression seventh embodiment of the present invention.

Figure 25 is signal Profile, the expressionThe related semiconductor light-emitting apparatus of the 6th variation of the seventh embodiment of the present invention.

Figure 26 is the profile of signal, the related semiconductor light-emitting apparatus of the 7th variation of the expression seventh embodiment of the present invention.

Figure 27 is the profile of signal, the related semiconductor light-emitting apparatus of the expression eighth embodiment of the present invention.

Figure 28 is the profile of signal, the related semiconductor light-emitting apparatus of first variation of the expression eighth embodiment of the present invention.

Figure 29 is the profile of signal, the related semiconductor light-emitting apparatus of second variation of the expression eighth embodiment of the present invention.

Figure 30 is the profile of signal, the related semiconductor light-emitting apparatus of the expression ninth embodiment of the present invention.

Figure 31 is the profile of signal, the related semiconductor light-emitting apparatus of first variation of the expression ninth embodiment of the present invention.

Figure 32 is the profile of signal, the related semiconductor light-emitting apparatus of second variation of the expression ninth embodiment of the present invention.

Figure 33 is the profile of signal, the related semiconductor light-emitting apparatus of the expression tenth embodiment of the present invention.

Figure 34 is a chart, is illustrated in the related semiconductor light-emitting apparatus of the tenth embodiment of the present invention, and the percent by volume of the relative basis material of particulate that added is made as 30% and the light wavelength of the encapsulant that constitutes and the relation between the light transmittance.

Figure 35 is a chart, represents the luminescent spectrum in the related semiconductor light-emitting apparatus of the tenth embodiment of the present invention.

Figure 36 is the profile of signal, the related semiconductor light-emitting apparatus of the 4th variation of the expression tenth embodiment of the present invention.

Figure 37 is the profile of signal, the related semiconductor light-emitting apparatus of the 5th variation of the expression tenth embodiment of the present invention.

Figure 38 is the profile of signal, the related semiconductor light-emitting apparatus of the 6th variation of the expression tenth embodiment of the present invention.

Figure 39 is the profile of signal, the related semiconductor light-emitting apparatus of the expression 11st embodiment of the present invention.

Figure 40 is the profile of signal, the related semiconductor light-emitting apparatus of the 4th variation of the expression 11st embodiment of the present invention.

Figure 41 is the profile of signal, the related semiconductor light-emitting apparatus of the 5th variation of the expression 11st embodiment of the present invention.

Figure 42 is the profile of signal, the related semiconductor light-emitting apparatus of the expression 12nd embodiment of the present invention.

Figure 43 is the profile of signal, the related semiconductor light-emitting apparatus of the expression 13rd embodiment of the present invention.

Figure 44 is the profile of signal, the related semiconductor light-emitting apparatus of a variation of the expression 13rd embodiment of the present invention.

Figure 45 is the profile of signal, expression conventional semiconductor light-emitting device.

Symbol description

[0081] 10-semiconductor light-emitting apparatus; 11A-first lead frame; 11B-second lead frame; The 12-LED chip; The fixing pastes of using of 13-chip; 14A-first electrode; 14B-second electrode; 15A-first metal wire; 15B-second metal wire; The 16-sealing; The 16a-basis material; 16b-particulate (first particulate); The 16b1-primary fine particles; The 16b2-composite particles; The 16c-fluorescent material; The 16d-encapsulant; 17b-second particulate; The 20-semiconductor light-emitting apparatus; The 25-resin material; The 26-sealing; The 27-luminescent coating; 26A-first sealing; 26B-second sealing; The 30-semiconductor light-emitting apparatus; The 30A-semiconductor light-emitting apparatus; The 30B-semiconductor light-emitting apparatus; The 30C-semiconductor light-emitting apparatus; The 30D-semiconductor light-emitting apparatus; The 30E-semiconductor light-emitting apparatus; The 30F-semiconductor light-emitting apparatus; The 30G-semiconductor light-emitting apparatus; The 31-substrate; 32A-first wiring; 32B-second wiring; The 40-semiconductor light-emitting apparatus; The 40A-semiconductor light-emitting apparatus; The 40B-semiconductor light-emitting apparatus; The 40C-semiconductor light-emitting apparatus; The 40D-semiconductor light-emitting apparatus; The 40E-semiconductor light-emitting apparatus; The 40F-semiconductor light-emitting apparatus; 41A-first projection; 41B-second projection; The 50-semiconductor light-emitting apparatus; The 50A-semiconductor light-emitting apparatus; The 50B-semiconductor light-emitting apparatus; The 50C-semiconductor light-emitting apparatus; The 50D-semiconductor light-emitting apparatus; The 50E-semiconductor light-emitting apparatus; The 50F-semiconductor light-emitting apparatus; The 50G-semiconductor light-emitting apparatus; The 50H-semiconductor light-emitting apparatus; The 50I-semiconductor light-emitting apparatus; The 50J-semiconductor light-emitting apparatus; The 50K-semiconductor light-emitting apparatus; The 50L-semiconductor light-emitting apparatus; The 51-housing parts; The 51a-recess; The 51b-space part; 52A-first lead-in wire; 52B-second lead-in wire; The secondary installing component of 53-; The 54A-first secondary installing electrodes; The 54B-first secondary installing electrodes; The 55-pastes; The 60A-semiconductor light-emitting apparatus; The 60B-semiconductor light-emitting apparatus; The 60C-semiconductor light-emitting apparatus; The 60D-semiconductor light-emitting apparatus; The 60E-semiconductor light-emitting apparatus; 70-(first) lens; 71-second lens; The 80-semiconductor light-emitting apparatus; The 80A-semiconductor light-emitting apparatus; The 81-reflector; The 81a-reflecting part; The 81b-space part.

Embodiment

[0082] (first embodiment)

With reference to accompanying drawing, the semiconductor light-emitting apparatus related to the first embodiment of the present invention describes.

[0083] Fig. 1, schematically expression is the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the first embodiment of the present invention.As shown in Figure 1, in the related white light LEDs device 10 of first embodiment, led chip 12 is supported on the upper end that is arranged at the first lead frame 11A and is on the bottom surface of bowl-shape chip mat (die pad) portion by fixing the fixing with pastes 13 of chips such as pasty state ag material or pasty state insulating material.

[0084] with for example by gallium nitride compound semiconductor constitute, emit wavelength at blue light region to the led chip of the light of ultraviolet region as led chip 12.

[0085] on the upper surface of led chip 12, is formed with the first electrode 14A and the second electrode 14B.The first electrode 14A is electrically connected with the first lead frame 11A by the first metal wire 15A, the second electrode 14B by the second metal wire 15B be made into the second right lead frame 11B with the first lead frame 11A and be electrically connected.

[0086] led chip 12 has been shaped as sealing 16 sealings of shell shape, and the upper end of the die pad portion of the first lead frame 11A and the second lead frame 11B is positioned at sealing portion 16.

[0087] sealing 16 is made of encapsulant 16d and fluorescent material 16c that the composite material that comprises basis material 16a and particulate 16b constitutes.Described particulate 16b is made of inorganic material, has been evenly dispersed in this basis material 16a inside.

[0088] 12 that radiated, the wavelength of led chip excites the fluorescent material 16c on the radiation path that is positioned at sealing 16 to the light of ultraviolet region (below, this light is called radiating light) at blue light region.Mix by the color that makes this exciting light and radiating light, the exciting light of multiple color is mixed, can from white light LEDs device 10, obtain white light.

[0089] Fig. 2 amplifies and the part of expression sealing 16.As shown in Figure 2, the particulate 16b that is made of inorganic material comprises the composite particles 16b2 that primary fine particles 16b1 and this primary fine particles 16b1 are condensing and constitute.Therefore, particulate 16b has been evenly dispersed among the basis material 16a, is meant that primary fine particles 16b1 and composite particles 16b2 are scattered here and there basically equably, rather than deployment conditions is according to the difference of position and difference.

[0090] can adopt by the material to visible transparent is that the resin material that constitutes of high-molecular organic material such as epoxy resin, allyl resin or cycloolefin (cycloolefin) resin or the resin material that is made of inorganic macromolecule materials such as silicones are as basis material 16a.

[0091] at this, it is below 1/4th of wavelength among the basis material 16a that the effective grain size of particulate 16b is set at radiation light wavelength that led chip 12 radiated.

[0092] the aerial wavelength of radiating light that is radiated at hypothesis led chip 12 is that 400nm and basis material 16a are under the situation of epoxy resin, because the refractive index of this epoxy resin is about 1.5, so the wavelength of radiating light in basis material 16a is 267nm just.Therefore, if the effective grain size of particulate 16b is set in below the 67nm, just this effective grain size can be set in below 1/4th of wavelength in the basis material 16a.

[0093] remark additionally, the effective grain size of particulate 16b is not defined to the value below 1/4th of the wavelength among the basis material 16a, as long as this effective grain size is set in more than the 1nm and below the 100nm, just can access effect of the present invention.Preferably such, be set in the effective grain size of particulate 16b more than the 1nm and below the 50nm, so that wavelength is had the more sufficient transparency at blue light region to the radiating light of ultraviolet region.

[0094] at this moment, fluoresce etc. and to have influence on the situation of characteristic if the particle diameter of particulate, will occur the material of quantum effect less than 1nm.Remark additionally, can be added on particle diameter and the effective grain size of the particulate 16b among the basis material 16a with affirmations such as electron microscopes.

[0095] it is above and below the 100nm that the particle diameter of primary fine particles 16b1 is preferably in 1nm, is more preferably to be located at substantial effective grain size more than the 1nm and below the 50nm.Remark additionally, except the particle size determination of in solution, carrying out with particles distribution instrument, can also be by the particle size determination of utilizing the gas adsorption method under the pulverulence or the effective grain size value of obtaining primary fine particles 16b1 with the particle size determination of electron microscope observation.

[0096] be that the average grain diameter of primary fine particles 16b1 is more than the 1nm and below the 10nm, and not aggegation of most of described primary fine particles 16b1 and be in the state that disperses equably than above-mentioned better off.Because Rayleigh scattering further lowers under this state, composite material has the sufficient transparency, so this state is very suitable.Can confirm whether described primary particle 16b1 is scattered here and there equably by using the transmission electron microscope observation composite material.

[0097], effective grain size is described with Fig. 3 at this.In Fig. 3, transverse axis is represented the particle diameter of particulate 16b; The longitudinal axis in left side is represented the frequency that particulate 16b is corresponding with the particle diameter of transverse axis; The longitudinal axis on right side is represented the cumulative frequency of particle diameter.Effective grain size, refer in the integral body of particulate 16b, be 50% particle diameter with the cumulative frequency in the granularity frequency distribution of this particulate 16b as medium particle diameter (middle (median) diameter: d50), be positioned at this medium particle diameter be the center, cumulative frequency is the particle size range B of 50% scope A.The effective grain size of primary fine particles 16b1 is also represented same scope.If will obtain the effective grain size value, be that object is just passable for example with particulate 16b more than 200 or primary fine particles 16b1 with high accuracy.

[0098] as long as adopts at least a inorganic material of for example from these classification of inorganic oxide, metal nitride, metal carbides, carbon compound and sulfide, selecting just passable as particulate 16b.

[0099] can use titanium oxide (refractive index is 2.2 to 2.5), tantalum oxide (refractive index is 2.0 to 2.3), niobium oxide (refractive index is 2.1 to 2.3), tungsten oxide (refractive index is 2.2), zirconia (refractive index is 2.1), zinc oxide (refractive index is 1.9 to 2.0), indium oxide (refractive index is 2.0), tin oxide (refractive index is 2.0), hafnium oxide (refractive index is 2.0), yittrium oxide (refractive index is 1.9), silica (refractive index is 1.4 to 1.5), or aluminium oxide (refractive index is 1.7 to 1.8) etc. is as inorganic oxide.In addition, the composite inorganic oxide that also can adopt described oxide to constitute.As metal nitride, can enumerate silicon nitride (refractive index is 1.9 to 2.0) or the like.As metal carbides, can enumerate carborundum (refractive index is 2.6) or the like.As carbon compound,, can enumerate diamond (refractive index is 3.0) or class and bore the inorganic material that carbon (diamond-like carbon) (refractive index is 3.0) etc. has light transmission though be simple substance.As sulfide, can enumerate copper sulfide, artificial gold or the like.Remark additionally and refractive index that each inorganic material title is write together, the radiating light that expression is radiated according to led chip 12 is that wavelength is in the refractive index of blue light region to the radiating light decision of ultraviolet region.

[0100] in addition, can adopt with at least a oxide of selecting from the classification that is made of described titanium oxide, tantalum oxide, zirconia and zinc oxide is that the inorganic particulate of main component is as the inorganic compound that increases as refractive index particulate 16b, that be used for making encapsulant 16d.The kind that described inorganic particulate has sales item is a lot, this benefit of fine buying.

[0101] at this, should note following item, in other words under the situation that adopts the inorganic compound that as titanium oxide, plays the photochemical catalyst effect easily owing to the effect of ultraviolet light, need not adopt compound and adopt compound, perhaps need to adopt non-crystalline material or by silica (SiO with rutile crystalline texture with the anatase crystalline texture that plays very strong photochemical catalyst effect ₂) or aluminium oxide (aluminum oxide: Al ₂O ₃) wait the inorganic compound that does not play the photochemical catalyst effect to cover the material that microparticle surfaces forms.

[0102] percent by volume of particulate 16b in the encapsulant 16d that is made of composite material is preferably in more than 5% and below 60%.If the percent by volume of particulate 16b is too high, the transparency of encapsulant 16d is just very weak.On the contrary, if the percent by volume of particulate 16b is too low, the effect that the interpolation by particulate 16b obtains is just very little.

[0103] Fig. 4 for example represents to adopt refractive index to be respectively 1.4,1.5 and 1.6 the material material as basis material 16a, and adopts titanium oxide (TiO ₂) under (refractive index is 2.4) situation, calculate refractive index n corresponding with the variation of particulate 16b shared ratio in the encapsulant 16d that constitutes by composite material, this composite material as the material of particulate 16b _cSituation of change and the result that obtains.Utilize following formula (1) (Mike Si Weier-Garnett (Maxwell-Garnett) theory) to calculate.Remark additionally the refractive index of composite material, the effective refractive index when referring to regard composite material as medium with a refractive index.

[0104]

n _c ²＝n ₂ ²×[n ₁ ²+2n ₂ ²+2P ₁(n ₁ ²-n ₂ ²)]/[n ₁ ²+2n ₂ ²-P ₁(n ₁ ²-n ₂ ²)]……(1)

At this, n _cIt is the refractive index of composite material; n ₁It is the refractive index of particulate 16b; n ₂It is the refractive index of basis material 16a; P ₁It is particulate 16b shared ratio (percent by volume) in composite material.

[0105] as seen from Figure 4, if will allow the refractive index of composite material more than 1.8, just the refractive index of basis material 16a be under 1.4,1.5 and 1.6 the situation percent by volume of particulate 16b in composite material be made as respectively 46%, 37% and 28% just passable.At this because the refractive index value of general optical resin is in 1.4 to 1.7 scope, so under the situation of only using optical resin, be difficult to realize to surpass 1.7, in the refractive index value more than 1.8.Therefore, preferably be made as the percent by volume of particulate 16b in composite material more than 5% and below 60%, though effective scope different and different according to as the properties of materials of the properties of materials of basis material 16a and particulate 16b.Be more preferably, be made as this percent by volume more than 10% and below 50%.Say again, with ranges of indices of refraction at optical resin 1.4 to 1.55, general as under the situation of basis material 16a, be more preferably and be made as this percent by volume more than 20% and below 40%.

[0106] under the situation of led chip 12 output blue radiating lights, it is just passable as the material of fluorescent material 16c that employing can access the fluorescent materials such as YAG:Ce of gold-tinted.Under the situation of the radiating light of ultraviolet region, adopt multiple fluorescent material in these led chip 12 output purple light districts as fluorescent material 16c.Particularly, can adopt Y ₂O ₂S:Eu is as the ruddiness fluorescent material; Can adopt ZnS:Cu, Al or (Ba, Mg) Al ₁₀O ₁₇: Eu, Mn is as the green glow fluorescent material; Can adopt (Sr, Ca, Ba, Mg) ₁₀(PO ₄) ₆C ₁₂: Eu or (Ba, Mg) Al ₁₀O ₁₇: Eu is as the blue light fluorescent material.

[0107] semiconductor light-emitting apparatus related according to first embodiment, because will be added among the encapsulant 16d that constitutes sealing 16 by the particulate 16b that inorganic material constitutes, improve so compare the light resistance and the thermal endurance of sealing 16 with the situation of not adding particulate 16b in the mode of disperseing equably.Because the effective grain size of the particulate 16b that is scattered here and there is set at below 1/4th of radiation light wavelength that led chip 12 (semiconductor chip) is radiated, so can not cause harmful effect to the transparency of sealing 16.Therefore, can not damage light extraction efficiency.

[0108] and, the coefficient of thermal expansion differences of comparing with the situation of not adding particulate 16b between sealing 16 and the led chip 12 is littler.Therefore, sealing 16 is difficult for peeling away from led chip 12, is difficult for producing the crack in sealing 16 (encapsulant 16d).

[0109] in addition, because compare the refractive index according to the radiating light decision of sealing 16 with the situation of not adding particulate 16b higher, so light extraction efficiency further improves.

[0110] remarks additionally, if adopt zinc oxide (ZnO), the titanium oxide (TiO of the light that can absorb ultraviolet region ₂) or cerium oxide (CeO ₂) as being added on particulate 16b in the sealing 16, just suppress the variable color that the influence owing to ultraviolet light causes under the situation that can constitute by high-molecular organic materials such as epoxy resin at the basis material 16a of encapsulant 16d.

[0111] says to have the transparency with pastes 13 again, do not absorb the radiating light that led chip 12 is radiated with pastes 13, so light extraction efficiency just improves because this chip is fixing if chip is fixing.Remark additionally, can for example obtain having the fixing pastes 13 of using of chip of the transparency by following way, this way is: carrying out allowing with epoxy resin or silicones with catalyst is the transparent pastes of main component, low melting point glass material or have first operation that the compound of silicon one oxygen key (siloxane bond) reacts, and the reactive material in this first operation is hydrolyzed and second operation of dehydration condensation, to adding the particulate 16b that absorbs ultraviolet light, make this hardening at subcritical temerature glass material become composite material then by the hardening at subcritical temerature glass material that allows the product drying of this second operation obtain.

[0112] by adding particulate 16b to chip is fixing with pastes 13, the fixing exothermicity with pastes 13 of this chip improves, and particulate 16b absorbs ultraviolet light, thereby the fixing light resistance (ultraviolet resistance) with pastes 13 of chip also improves.

[0113] (second embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the second embodiment of the present invention describes.

[0114] Fig. 5 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the second embodiment of the present invention.Remark additionally, with the identical symbolic representation structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 1.

[0115] as shown in Figure 5, in the related semiconductor light-emitting apparatus 20 of second embodiment, sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A directly covers the led chip 12 on the die pad portion that is supported on the first lead frame 11A; This second sealing 26B covers each upper part of the first lead frame 11A and the second lead frame 11B that comprise this first sealing 26A with the shell shape.

[0116] first sealing 26A is made of encapsulant 16d, and sealing material 16d is made of the composite material that comprises the related particulate 16b of first embodiment; The second sealing 26B is made of the resin material 25 that is mixed with fluorescent material 16c.As long as use the material the same just passable as the material of resin material 25 with the related basis material 16a of first embodiment.

[0117] semiconductor light-emitting apparatus 20 related according to second embodiment, by at the first sealing 26A that constitutes by the encapsulant 16d that composite material constituted from led chip 12 part settings nearer, that optical density is higher, can realize from led chip 12 light extraction efficiencies that extract, very high, can access very high light resistance and thermal endurance, the same with first embodiment.

[0118] on the other hand, by the second sealing 26B that constitutes than the transparent high resin material 25 of encapsulant 16d by the transparency in part setting far away from led chip 12, that optical density is lower, and make this second sealing 26B cover the first sealing 26A, can improve the light transmission among the second sealing 26B.Consequently, the light extraction efficiency that extracts from semiconductor light-emitting apparatus 20 is improved.

[0119] remarks additionally, be longer than in the radiation light wavelength of led chip 12 under the situation of wavelength of blue light region, if the deterioration that the basis material 16a that zinc oxide, titanium oxide or the cerium oxide that can absorb ultraviolet light as the particulate 16b that is added among the first sealing 26A, just can suppress to constitute the first sealing 26A causes owing to the influence of ultraviolet light.Consequently, though can be good with transparencys such as for example epoxy resin, the resin that influences yellowing that is subjected to ultraviolet light easily is as basis material 16a.

[0120] (the 3rd embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the third embodiment of the present invention describes.

[0121] Fig. 6 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the third embodiment of the present invention.At this, also represent the structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 1 with identical symbol.

[0122] as shown in Figure 6, in the related semiconductor light-emitting apparatus 30 of the 3rd embodiment, led chip 12 is installed on the printed wiring substrate, this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0123] particularly, led chip 12 is fixed on the first wiring 32A with pastes 13 by chip is fixing.Among the first electrode 14A and the second electrode 14B on the upper surface that is formed at led chip 12, the first electrode 14A is electrically connected with the first wiring 32A by the first metal wire 15A, and the second electrode 14B is electrically connected with the second wiring 32B by the second metal wire 15B.

[0124] sealing 16, are made of the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.Just passable with the material the same as the material that constitutes sealing 16 with the material of the sealing 16 that constitutes first embodiment.

[0125] led chip 12 that is electrically connected with the first wiring 32A and the second wiring 32B respectively is around sealed 16 this led chip 12 of sealing on the printed wiring substrate.

[0126] remarks additionally, for example by utilizing metallization to be formed on the substrate 31 by the wiring that copper (Cu) film constitutes, utilize metallization that nickel (Ni) film and gold (Au) film are formed in the described established wiring successively then, can form the first wiring 32A and the second wiring 32B.

[0127] like this, by after being installed in led chip 12 on the printed wiring substrate, mix the material that forms with composite material that will comprise basis material 16a and particulate 16b and fluorescent material 16c and carry out transfer modling, realize the related semiconductor light-emitting apparatus of the 3rd embodiment 30.

[0128] like this, just can be the same with the related semiconductor light-emitting apparatus 10 of first embodiment, in the related semiconductor light-emitting apparatus 30 of the 3rd embodiment, also can the be improved light resistance and the thermal endurance of sealing 16, and the effect that light extraction efficiency is improved.

[0129] (the 4th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the fourth embodiment of the present invention describes.

[0130] Fig. 7 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the fourth embodiment of the present invention.At this, also represent the structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 1 with identical symbol.

[0131] as shown in Figure 7, in the related semiconductor light-emitting apparatus 40 of the 4th embodiment, the upper surface that led chip 12 utilization makes led chip 12 and the interarea of substrate 31 in opposite directions, so-called flip-chip installs (installation down) method and is installed on the printed wiring substrate, this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0132] particularly, on being formed at led chip 12, respectively with the substrate 31 first electrode 14A and the second electrode 14B in opposite directions in, the first electrode 14A is electrically connected with the first wiring 32A by the first projection 41A, and the second electrode 14B is electrically connected with the second wiring 32B by the second projection 41B.

[0133] led chip 12 that is electrically connected with the first wiring 32A and the second wiring 32B respectively is around sealed 16 this led chip 12 of sealing on the printed wiring substrate.

[0134] sealing 16, are made of the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.Just passable with the material the same as the material that constitutes sealing 16 with the material of the sealing 16 that constitutes first embodiment.

[0135] remarks additionally, for example can adopt gold (Au) as the material that constitutes the first projection 41A and the second projection 41B.

[0136] like this, by after utilizing the flip-chip method of installing to be installed in led chip 12 on the printed wiring substrate, mix the material that forms with composite material that will comprise basis material 16a and particulate 16b and fluorescent material 16c and carry out transfer modling, realize the related semiconductor light-emitting apparatus of the 4th embodiment 40.

[0137] therefore, can be the same with the related semiconductor light-emitting apparatus 10,30 of first embodiment and the 3rd embodiment, in the related semiconductor light-emitting apparatus 40 of the 4th embodiment, also can the be improved light resistance and the thermal endurance of sealing 16, and the effect that light extraction efficiency is improved.

[0138] in addition, because in the related semiconductor light-emitting apparatus 40 of the 4th embodiment, not to use metal wire, but led chip 12 and printed wiring substrate are electrically connected with projection, so and the related semiconductor light-emitting apparatus 30 of the 3rd embodiment by comparison, can realize slimming.

[0139] (the 5th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the fifth embodiment of the present invention describes.

[0140] Fig. 8 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the fifth embodiment of the present invention.At this, also represent the structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 1 with identical symbol.

[0141] as shown in Figure 8, in the related semiconductor light-emitting apparatus 50 of the 5th embodiment, led chip 12 is fixed on the recess 51a bottom surface in the housing parts 51 with recess 51a.Housing parts 51 for example is made of heat-resistant resin materials such as liquid crystal polymers, has at least the first lead-in wire 52A and the second lead-in wire 52B inserting and is formed in this housing parts 51.If consider the reflection that visible light is carried out, just the most handy white heat-resistant resin material is as this housing parts 51.

[0142] the first lead-in wire 52A and the second lead-in wire 52B expose on the bottom surface of the recess 51a of housing parts 51, and led chip 12 is fixed on first with pastes 13 and goes between on the zone that 52A exposes by chip is fixing.

[0143] among the first electrode 14A and the second electrode 14B on the upper surface that is formed at led chip 12, the first electrode 14A is electrically connected with the first lead-in wire 52A by the first metal wire 15A, and the second electrode 14B is electrically connected with the second lead-in wire 52B by the second metal wire 15B.

[0144] in the 5th embodiment, be filled among the recess 51a of housing parts 51 by making sealing 16, come the led chip 12 of sealing and fixing on the recess 51a bottom surface of housing parts 51.

[0145] sealing 16, are made of the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.Just passable with the material the same as the material that constitutes sealing 16 with the material of the sealing 16 that constitutes first embodiment.

[0146] remark additionally, at this, the terminal shape of part that the first lead-in wire 52A and second lead-in wire is positioned at the outside of sheathing material 51 among the 52B is made as the so-called gull wing (Gull Wing:GW) shape.But, it is wing that the outer shape of each bar lead-in wire 52A, 52B is not limited to gull, also can with this partially-formed be the J word shape.

[0147] like this, the semiconductor light-emitting apparatus 10,30,40 related with the first, the 3rd and the 4th embodiment is the same, the light resistance and the thermal endurance of sealing 16 and the effect that light extraction efficiency is improved also can be improved in the related semiconductor light-emitting apparatus 50 of the 5th embodiment.

[0148] in addition, also can be made as following structure and replace the structure of the related sealing 16 of each embodiment of the 3rd, the 4th and the 5th embodiment, the structure of this replacement is: as the related first sealing 26A and the second sealing 26B of second embodiment, directly cover led chip 12 with the encapsulant 16d that comprises the particulate 16b that constitutes by inorganic material, cover sealing material 16d with the basis material 16a that comprises fluorescent material 16c again.

[0149] in addition, also can be such, in each embodiment of first to the 5th embodiment, at least a portion zone between composite material and semiconductor chip is provided with the space of regulation.

[0150] Fig. 9 (a) is expressed as the relation between the rate of change of total light flux of the material refractive index that obtain by analogue test, sealing 16 of every kind of substrate that constitutes the led chip 12 in the related semiconductor light-emitting apparatus 50 of the 5th embodiment and emergent light; Fig. 9 (b) represents refractive index that obtain by same analogue test, sealing 16 and the relation between the total light flux.At this, [chart 1] is illustrated in the backing material that uses in the analogue test.The refractive index of the various backing materials shown in [chart 1] is various basis materials representative value at visible region.

[0151] [chart 1]

Backing material	Refractive index
		GaN ZnSe SiC sapphire GaP InGaAlP GaAs ZnO	2.5 2.5 2.6 1.7 3.3 3.45 3.66 2.15

[0152] as seen, the refractive index of sealing 16 is preferably in more than 1.2 and below 2.5 by Fig. 9 (a) and Fig. 9 (b).With refractive index greater than 2.0 zinc oxide (ZnO), gallium nitride (GaN) or carborundum (SiC) etc. as under the situation of backing material, the refractive index of sealing 16 is preferably in more than 1.4 and below 2.2, is more preferably this refractive index more than 1.6 and below 2.0.

[0153] (the 6th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the sixth embodiment of the present invention describes.

[0154] Figure 10 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the sixth embodiment of the present invention.At this, also represent and Fig. 1 and the identical structural factor of structural factor shown in Figure 6, the explanation of omitting these structural factors with identical symbol.

[0155] as shown in figure 10, the same with the 3rd embodiment, in the related semiconductor light-emitting apparatus 30A of the 6th embodiment, led chip 12 with allow the back side of led chip 12 and substrate 31 interarea in opposite directions, so-called junction point is installed on the printed wiring substrate in the mode (installing up) of upside (junction-up), this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0156] sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A is with hemispherical direct covering semiconductor light-emitting apparatus chip 12; This second sealing 26B is with this first sealing of hemispherical direct covering 26A.

[0157] first sealing 26A, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the first particulate 16b, the described first particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0158] second sealing 26B, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the second particulate 17b, the described second particulate 17b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.At this, use the material the same just passable as the material that constitutes the first sealing 26A and the second sealing 26B with the material of the sealing 16 that constitutes first embodiment.But, in the 6th embodiment, select refractive index and be higher than the refractive index materials of the second particulate 17b as the first particulate 16b.

[0159] comprising crystal growth substrate (epitaxial substrate (epitaxial substrate)), under the situation of led chip 12 by gallium nitride (GaN) semiconductor formation, because the refractive index of gallium nitride is about 2.5 shown in [chart 1], even so by add particulate with the refractive index of sealing be set at extraction efficiency the highest about 1.8, the difference of the refractive index of sealing portion and the refractive index of air is still also very big.

[0160] therefore, in the 6th embodiment, make refractive index value from the first nearer sealing 26A of led chip 12 be higher than refractive index value from the led chip 12 second sealing 26B far away.Particularly, the low inorganic material conduct of refractive index of adopting refractive index ratio to be added on the first particulate 16b among the first sealing 26A is added on the second particulate 17b among the second sealing 26B.

[0161] according to described structure, because the refractive index of the second sealing 26B that contacts with air is lower than the refractive index of the first sealing 26A that contacts with led chip 12, the difference between the refractive index of the refractive index of the second sealing 26B and air is less.Therefore, can lower on the interface between the second sealing 26B and the air can cause, the total reflection of emergent light, thereby can improve the light resistance and the thermal endurance of sealing 26, can further improve light extraction efficiency.

[0162] in addition, in the 6th embodiment, be hemispherical because for example utilize embedding moulding (potting) method that the first sealing 26A and the second sealing 26B are formed profile, so the total reflection of emergent light is further lowered.

[0163] remarks additionally, the first sealing 26A and the second sealing 26B have been added fluorescent material 16c at this.Also can only add fluorescent material 16c to a sealing among the first sealing 26A and the second sealing 26B.

[0164] (first variation of the 6th embodiment)

Figure 11 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of first variation of the sixth embodiment of the present invention.

[0165] as shown in figure 11, in the related semiconductor light-emitting apparatus 30B of first variation, the cross-sectional profile that directly covers the first sealing 26A of led chip 12 is made as quadrangle.

[0166] like this, can utilize the method for print process as the encapsulant 16d that is used for forming the first sealing 26A.Therefore, productivity ratio improves.

[0167] (second variation of the 6th embodiment)

Figure 12 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of second variation of the sixth embodiment of the present invention.

[0168] as shown in figure 12, in the related semiconductor light-emitting apparatus 30C of second variation, the cross-sectional profile that directly covers the first sealing 26A of led chip 12 and cover the second sealing 26B of this first sealing 26A all is made as quadrangle.

[0169] like this, just can utilize the method for print process, also can utilize transfer moudling to form the second sealing 26B as the encapsulant 16d that is used for forming the first sealing 26A.Therefore, productivity ratio improves.And, because the upper surface of sealing 26 is very smooth, so can easily use this semiconductor light-emitting apparatus as device.

[0170] (the 3rd variation of the 6th embodiment)

Figure 13 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 3rd variation of the sixth embodiment of the present invention.

[0171] as shown in figure 13, in the related semiconductor light-emitting apparatus 30D of the 3rd variation, the profile that directly covers the first sealing 26A of led chip 12 is made as hemispherical, and the cross-sectional profile that will cover the second sealing 26B of this first sealing 26A is made as quadrangle.

[0172] like this, total reflection is lowered with regard to the influence that is the hemispheric first sealing 26A owing to profile, and can easily use this semiconductor light-emitting apparatus as device owing to the influence of the second very smooth sealing 26B of upper surface.

[0173] (the 4th variation of the 6th embodiment)

Figure 14 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 4th variation of the sixth embodiment of the present invention.

[0174] as shown in figure 14, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50A of the 4th variation, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0175] at this, directly cover the first sealing 26A of led chip 12 and cover the section shape of the second sealing 26B of this first sealing 26A, all be quadrangle.

[0176] in this variation, in the situation that white heat-resistant resin material is used as housing parts 51, or under the metallized situation to the deposition of having carried out for example utilizing aluminium metals such as (Al) on the interior sidewall surface of housing parts 51 etc., the interior sidewall surface of this housing parts 51 plays the effect of reflecting surface.And, because the interior sidewall surface of housing parts 51 is made as the back taper that broadens upward from the below, so except sealing 26 is had this structure of refringence, light extraction efficiency also improves according to the shape of housing parts 51 and this housing parts 51.

[0177] remarks additionally, under the situation of when forming the first sealing 26A, wanting to utilize print process and directly printing on the recess 51a bottom surface to housing parts 51, for example, after utilizing print process to form the first sealing 26A, should be installed on housing parts 51 bottom surfaces just passable by the pair installing component again as long as in advance led chip 12 is installed on pair (sub) installing component.

[0178] Figure 15 (a) and Figure 15 (b), be illustrated among the related semiconductor light-emitting apparatus 50A of the 4th variation of the 6th embodiment, obtain the various refractive indexes of the first sealing 26A and the second sealing 26B and the result of the relation between the light extraction efficiency by analogue test.At this, Figure 15 (a) expression is with the situation of gallium nitride as the backing material that constitutes led chip 12; Figure 15 (b) expression is with the situation of sapphire as backing material.At this, the thickness of the first sealing 26A is made as 500 μ m; The thickness of the second sealing 26B is made as 200 μ m.

[0179] as seen, under with the situation of gallium nitride as the substrate of led chip 12, the refractive index of the first sealing 26A is high more, and light extraction efficiency is high more by Figure 15 (a) and Figure 15 (b).And under the situation of the substrate that sapphire is used as led chip 12, the influence that the variations in refractive index of the first sealing 26A is brought is very little.

[0180] no matter substrate is gallium nitride or sapphire, and following tendency is all arranged, that is: the refractive index of the second sealing 26B is low more, and light extraction efficiency is just high more, and the rate of change of the variations in refractive index of the relative first sealing 26A of light extraction efficiency is more little.

[0181] (the 5th variation of the 6th embodiment)

Figure 16 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 5th variation of the sixth embodiment of the present invention.

[0182] as shown in figure 16, in the related semiconductor light-emitting apparatus 50B of the 5th variation, led chip 12 is fixed on the recess 51a bottom surface in the housing parts 51 with recess 51a.

[0183] at this, the profile that directly covers the first sealing 26A of led chip 12 is made as hemispherical, and the cross-sectional profile that will cover the second sealing 26B of this first sealing 26A is made as quadrangle.

[0184] like this, just can utilize profile to be the hemispheric first sealing 26A and lower reflection, can utilize housing parts 51 to improve light extraction efficiency.

[0185] (the 6th variation of the 6th embodiment)

Figure 17 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 6th variation of the sixth embodiment of the present invention.

[0186] as shown in figure 17, in the related semiconductor light-emitting apparatus 50C of the 6th variation, the composition of particulate 16b among the composition that makes the particulate 16b among the encapsulant 16d that is added on the second sealing 26B and the encapsulant 16d that is added on the first sealing 26A is the same, and makes particulate 16b shared ratio in encapsulant 16d among the first sealing 26A be higher than particulate 16b among the second sealing 26B shared ratio in encapsulant 16d.In other words, the particulate 16b that the particulate 16b interpolation concentration among the second sealing 26B is lower than among the first sealing 26A adds concentration.At this, when setting the interpolation concentration difference, also can allow concentration have concentration gradient, also can allow concentration change interimly.

[0187] also can make the refractive index of the refractive index of the second sealing 26B by described way less than the first sealing 26A.

[0188] remarks additionally, in this variation, as being added on the particulate 16b among the first sealing 26A and being added on particulate 16b among the second sealing 26B, only changed interpolation concentration with the inorganic material of same composition.As long as make the refractive index of the refractive index of the second sealing 26B less than the first sealing 26A, just also can adopt following way to replace described method, this way is: composition and the concentration of the particulate 16b in making the particulate 16b that is added among the first sealing 26A and being added on the second sealing 26B are different.

What [0189] represent in Figure 17 is that the profile that will directly cover the first sealing 26A of led chip 12 is made as hemispheric situation.Also can be such, the same with the Figure 14 that in the 4th variation of the 6th embodiment, illustrates, the cross-sectional profile of the first sealing 26A is made as quadrangle.

[0190] the same with this variation, also can be such, in first to the 3rd variation of the 6th embodiment and the 6th embodiment, adopt particulate 16d to replace being added on particulate 17b among the encapsulant 16d of the second sealing 26B, make the composition of the particulate 16b among composition and the encapsulant 16d that is added on the first sealing 26A of particulate 16d of described interpolation the same, and make particulate 16b shared ratio in encapsulant 16d among the first sealing 26A be higher than particulate 16b among the second sealing 26B shared ratio in encapsulant 16d.

[0191] (the 7th variation of the 6th embodiment)

In the 6th embodiment and each variation, the first sealing 26A and the second sealing 26B have been added fluorescent material 16c.Also can only add fluorescent material 16c to a sealing among the described first sealing 26A and the second sealing 26B.

[0192] in the related semiconductor light-emitting apparatus 50D of the 7th variation shown in Figure 180, for example adopt can green light gallium phosphide (GaP) semiconductor as led chip 12.In this case, do not need sealing 26 is added fluorescent material 16c.

[0193], in opposite directions mode the first electrode 14A and the second electrode 14B are respectively formed on the lower surface of led chip 12 and on the upper surface with under the situation of gallium phosphide semiconductor as led chip 12.The first electrode 14A has by pasty state ag material etc. that the chip of conductivity is fixing to be electrically connected with pastes 13 and first 52A that goes between; The second electrode 14B is electrically connected with the second lead-in wire 52B by metal wire 15B.

[0194] remarks additionally, in the 6th embodiment and variation thereof, sealing 26 is made as the double-decker that the first sealing 26A and the second sealing 26B are constituted, but structure is not defined to double-decker, structure can be made as the laminated construction more than three layers yet.But, the laminated construction as if being made as more than three layers just need be made as: in each sealing, low more from the refractive index of led chip 12 sealing far away more.

[0195] (the 7th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the seventh embodiment of the present invention describes.

[0196] Figure 19 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the seventh embodiment of the present invention.At this, also represent and Fig. 1 and the identical structural factor of structural factor shown in Figure 7, the explanation of omitting these structural factors with identical symbol.

[0197] as shown in figure 19, the same with the 4th embodiment, in the related semiconductor light-emitting apparatus 40A of the 7th embodiment, led chip 12 utilizes the upper surface of led chip 12 and the interarea flip-chip installation method in opposite directions of substrate 31 is installed on the printed wiring substrate, this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0198] sealing 26, are made of the first sealing 26A and the second sealing 26B, and this first sealing 26A is with hemispherical direct covering semiconductor light-emitting apparatus chip 12; This second sealing 26B is with this first sealing of hemispherical direct covering 26A.

[0199] first sealing 26A, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the first particulate 16b, the described first particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0200] second sealing 26B, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the second particulate 17b, the described second particulate 17b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.At this, as long as use the material the same just passable as the material that constitutes the first sealing 26A and the second sealing 26B with the material of the sealing 16 that constitutes first embodiment.But, need select refractive index greater than the refractive index materials of the second particulate 17b as the first particulate 16b.

[0201] like this, just the same with the 6th embodiment, in the 7th embodiment, be positioned at from the refractive index value of the first sealing 26A of the nearer inboard of led chip 12 also greater than the refractive index value that is positioned at from the second sealing 26B in led chip 12 outside far away.

[0202] in other words, because according to described structure, the refractive index of the second sealing 26B that contacts with air is less than the refractive index of the first sealing 26A that contacts with led chip 12, so the difference between the refractive index of the refractive index of the second sealing 26B and air is less.Therefore, can lower the total reflection that emergent light can cause on the interface between the second sealing 26B and the air, thereby can improve the light resistance and the thermal endurance of sealing 26, can further improve light extraction efficiency.

[0203] in addition, in the present embodiment, be hemispherical because for example utilize the embedding method of forming that the first sealing 26A and the second sealing 26B are formed profile, so the total reflection of emergent light is further lowered.

[0204] remarks additionally, in the 7th embodiment, the first sealing 26A and the second sealing 26B have been added fluorescent material 16c.Also can only add fluorescent material 16c to a sealing among the first sealing 26A and the second sealing 26B.

[0205] (first variation of the 7th embodiment)

Figure 20 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of first variation of the seventh embodiment of the present invention.

[0206] as shown in figure 20, in the related semiconductor light-emitting apparatus 40B of first variation, the cross-sectional profile that directly covers the first sealing 26A of led chip 12 is quadrangle.

[0207] like this, can utilize the method for print process as the encapsulant 16d that is used for forming the first sealing 26A.Therefore, productivity ratio improves.

[0208] (second variation of the 7th embodiment)

Figure 21 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of second variation of the seventh embodiment of the present invention.

[0209] as shown in figure 21, in the related semiconductor light-emitting apparatus 40C of second variation, the cross-sectional profile that directly covers the first sealing 26A of led chip 12 and cover the second sealing 26B of this first sealing 26A all is made as quadrangle.

[0210] like this, just can utilize the method for print process, also can utilize transfer moudling to form the second sealing 26B as the encapsulant 16d that is used for forming the first sealing 26A.Therefore, productivity ratio improves.And, because the upper surface of sealing 26 is very smooth, so can easily use this semiconductor light-emitting apparatus as device.

[0211] (the 3rd variation of the 7th embodiment)

Figure 22 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 3rd variation of the seventh embodiment of the present invention.

[0212] as shown in figure 22, in the related semiconductor light-emitting apparatus 40D of the 3rd variation, the profile that directly covers the first sealing 26A of led chip 12 is made as hemispherical, and the cross-sectional profile that will cover the second sealing 26B of this first sealing 26A is made as quadrangle.

[0213] like this, total reflection is lowered with regard to the influence that is the hemispheric first sealing 26A owing to profile, and can easily use this semiconductor light-emitting apparatus as device owing to the influence of the second very smooth sealing 26B of upper surface.

[0214] (the 4th variation of the 7th embodiment)

Figure 23 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 4th variation of the seventh embodiment of the present invention.

[0215] as shown in figure 23, in the related semiconductor light-emitting apparatus 60 of the 4th variation, led chip 12 utilizes flip-chip installation method to be installed on the recess 51a bottom surface in the housing parts 51 with recess 51a.

[0216] at this, the section shape that directly covers the first sealing 26A of led chip 12 and cover the second sealing 26B of this first sealing 26A all is a quadrangle.

[0217] in this variation, if white heat-resistant resin material is used as housing parts 51, the interior sidewall surface of this housing parts 51 just plays the effect of reflecting surface.And, because the interior sidewall surface of housing parts 51 is made as the back taper that broadens upward from the below, so except utilizing the first particulate 16b and the second particulate 17b that sealing 26 is had the structure of refringence, light extraction efficiency also improves according to the shape of housing parts 51 and this housing parts 51.

[0218] (the 5th variation of the 7th embodiment)

Figure 24 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 5th variation of the seventh embodiment of the present invention.

[0219] as shown in figure 24, in the related semiconductor light-emitting apparatus 60A of the 5th variation, led chip 12 utilizes flip-chip method to be installed on secondary installing component 53 is installed in recess 51a bottom surface in the housing parts 51 with recess 51a.

[0220] led chip 12, utilize flip-chip installation method to be installed in upper surface and are formed with at least on the secondary installing component 53 first secondary installing electrodes 54A and the second secondary installing electrodes 54B, that for example be made of pottery.

[0221] particularly, the first sealing 26A is to utilize print process to form in the mode that covers led chip 12.Secondary installing component 53 with the led chip 12 that is being sealed by the first sealing 26A is installed on the bottom surface of housing parts 51.Among the first secondary installing electrodes 54A and the second secondary installing electrodes 54B on being formed at secondary installing component 53 upper surfaces, the first secondary installing electrodes 54A is electrically connected with the first lead-in wire 52A by the first metal wire 15A, and the second secondary installing electrodes 54B is electrically connected with the second lead-in wire 52B by the second metal wire 15B.

[0222] remark additionally, also can be with Zener (Zener) diode as secondary installing component 53.

What [0223] represent in Figure 24 is, the cross-sectional profile of the first sealing 26A is made as dimetric situation.Also the profile of the first sealing 26A can be made as hemispherical.

[0224] (the 6th variation of the 7th embodiment)

Figure 25 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 6th variation of the seventh embodiment of the present invention.

[0225] as shown in figure 25, in the related semiconductor light-emitting apparatus 60B of the 6th variation, led chip 12 utilizes flip-chip installation method to be mounted and fixed on the recess 51a bottom surface in the housing parts 51 with recess 51a.

[0226] at this, the profile that directly covers the first sealing 26A of led chip 12 is made as hemispherical, the cross-sectional profile that covers the second sealing 26B of this first sealing 26A is made as quadrangle.

[0227] like this, profile is the hemispheric first sealing 26A and just lowers total reflection, and housing parts 51 improves light extraction efficiency.

[0228] (the 7th variation of the 7th embodiment)

Figure 26 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 7th variation of the seventh embodiment of the present invention.

[0229] as shown in figure 26, in the related semiconductor light-emitting apparatus 60C of the 7th variation, the composition of particulate 16b among the composition that makes the particulate 16b among the encapsulant 16d that is added on the second sealing 26B and the encapsulant 16d that is added on the first sealing 26A is the same, and makes particulate 16b shared ratio in encapsulant 16d among the first sealing 26A be higher than particulate 16b among the second sealing 26B shared ratio in encapsulant 16d.In other words, the particulate 16b that the particulate 16b interpolation concentration among the second sealing 26B is lower than among the first sealing 26A adds concentration.At this, when setting the interpolation concentration difference, also can allow concentration have concentration gradient, also can allow concentration change interimly.

[0230] also can make the refractive index of the refractive index of the second sealing 26B by described way less than the first sealing 26A.

[0231] remarks additionally, in this variation, as being added on the particulate 16b among the first sealing 26A and being added on particulate 16b among the second sealing 26B, only changed the interpolation concentration of this inorganic material with the inorganic material of same composition.As long as make the refractive index of the refractive index of the second sealing 26B less than the first sealing 26A, just also can adopt following way to replace described method, this way is: composition and the concentration of the particulate 16b in making the particulate 16b that is added among the first sealing 26A and being added on the second sealing 26B are different.

What [0232] represent in Figure 26 is that the profile that will directly cover the first sealing 26A of led chip 12 is made as hemispheric situation.Also can be such, the same with the Figure 23 that in the 4th variation of the 7th embodiment, illustrates, the cross-sectional profile of the first sealing 26A is made as quadrangle.

[0233] the same with this variation, also can be such, in the first to the 3rd and the 5th variation of the 7th embodiment and the 7th embodiment, adopt particulate 16d to replace being added on particulate 17b among the encapsulant 16d of the second sealing 26B, make the composition of the particulate 16b among composition and the encapsulant 16d that is added on the first sealing 26A of particulate 16d of described interpolation the same, and make particulate 16b shared ratio in encapsulant 16d among the first sealing 26A be higher than particulate 16b among the second sealing 26B shared ratio in encapsulant 16d.

[0234] in the 7th embodiment and each variation, the first sealing 26A and the second sealing 26B have been added fluorescent material 16c.Also can only add fluorescent material 16c to a sealing among the first sealing 26A and the second sealing 26B.

[0235] remarks additionally, in the 7th embodiment and variation thereof, sealing 26 is made as the double-decker that the first sealing 26A and the second sealing 26B are constituted, but structure is not defined to double-decker, structure can be made as the laminated construction more than three layers yet.But, the laminated construction as if being made as more than three layers just need be made as: in each sealing, low more from the refractive index of led chip 12 sealing far away more.

[0236] (the 8th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the eighth embodiment of the present invention describes.

[0237] Figure 27 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the eighth embodiment of the present invention.At this, also represent and Fig. 1 and the identical structural factor of structural factor shown in Figure 6, the explanation of omitting these structural factors with identical symbol.

[0238] as shown in figure 27, the same with the 3rd embodiment, in the related semiconductor light-emitting apparatus 30E of the 8th embodiment, led chip 12 with allow the back side of led chip 12 and substrate 31 interarea in opposite directions, so-called junction point is installed on the printed wiring substrate in the mode (installing up) of upside (junction-up), this printed wiring substrate comprises substrate, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0239] sealing 16 is made of the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.Just passable with the material the same as the material that constitutes sealing 16 with the material of the sealing 16 that constitutes first embodiment.But, in the 8th embodiment, be made as: make from the nearer medial region of led chip 12, particulate 16b shared ratio in composite material be higher than the outside that is in this medial region exterior lateral area, particulate 16b shared ratio in composite material.

[0240] comprising crystal growth substrate (epitaxial substrate (epitaxial substrate)), under the situation of led chip 12 by gallium nitride (GaN) semiconductor formation, because the refractive index of gallium nitride is about 2.5 shown in [chart 1], even so by add particulate with the refractive index of sealing be set at extraction efficiency the highest about 1.8, the difference of the refractive index of sealing portion and the refractive index of air is still also very big.

[0241] so, in the 8th embodiment, make refractive index value in the sealing 16 be higher than the refractive index value of the exterior lateral area in the outside that is in this medial region from the nearer medial region of led chip 12.Particularly, the concentration that will be added on the particulate 16b in the sealing 16 in medial region is made as higher value, the concentration that makes particulate 16b is step-down gradually laterally, thereby makes the refractive index of the exterior lateral area of sealing 16 be lower than the refractive index of the medial region of the inboard that is in this exterior lateral area.At this moment, the concentration that also can make particulate 16b is step-down gradually laterally from the inboard, and the concentration that also can make particulate 16b is interim ground step-down laterally from the inboard.

[0242] therefore, according to described structure, the refractive index of the exterior lateral area of the sealing 16 that contacts with air is lower than the refractive index of the medial region that contacts with led chip 12, thereby the difference of the refractive index of the refractive index of the exterior lateral area of sealing 16 and air is less.Therefore, can lower the total reflection that cause at the interface of emergent light between sealing 16 and air, thereby the light resistance of sealing 16 and thermal endurance raising, and can further improve light extraction efficiency.

[0243] in addition, in present embodiment, be hemispherical because for example utilize embedding moulding (potting) method that sealing 16 is formed profile, so the total reflection of emergent light is further lowered.At this, higher and, can enumerate with presclerotic aqueous composite material and carry out the repeatedly method of embedding moulding in medial region in the lower method of exterior lateral area as the interpolation concentration that makes particulate 16b.In other words, as long as just passable to allow exterior lateral area carry out the embedding moulding less than medial region with the mode of the adding proportion of composite material with the adding proportion of the particulate 16b in the composite material.At this moment, also can be such, select refractive index and be lower than other particulates refractive index, that constitute by inorganic material of particulate 16b of embedding moulding for the first time as the particulate 16b of for the second time later embedding moulding.Afterwards, can make described aqueous composite material become the sealing 16 that constitutes by composite material, form the structure of present embodiment by sclerosis.

[0244] remarks additionally, in the 8th embodiment, sealing 16 has been added fluorescent material 16c.But, as mentioned above, adopting gallium phosphide (GaP) semiconductor under the situation of the green light LED device that constitutes etc., not need to make sealing 16 to comprise fluorescent material 16c as led chip 12.

[0245] (first variation of the 8th embodiment)

Figure 28 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of first variation of the eighth embodiment of the present invention.

[0246] as shown in figure 28, in the related semiconductor light-emitting apparatus 30F of first variation, the cross-sectional profile of the sealing 16 that the interpolation concentration of particulate 16b is lowered laterally gradually is made as quadrangle.

[0247], can utilize so that the particulate 16b in the outside of sealing 16 adds the method that mode that particulate 16b that concentration is lower than the inboard of sealing 16 adds concentration is repeatedly carried out transfer modling as the formation method of the encapsulant 16d in the related sealing 16 of this variation.

[0248] (second variation of the 8th embodiment)

Figure 29 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of second variation of the eighth embodiment of the present invention.

[0249] as shown in figure 29, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50E of second variation, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0250] at this, the section shape that covers the sealing 16A of led chip 12 is a quadrangle.

[0251] in this variation, in the situation that white heat-resistant resin material is used as housing parts 51, or under the metallized situation to the deposition of having carried out for example utilizing aluminium metals such as (Al) on the interior sidewall surface of housing parts 51 etc., the interior sidewall surface of this housing parts 51 plays the effect of reflecting surface.And, because the interior sidewall surface of housing parts 51 is made as the back taper that broadens upward from the below, so except the interpolation concentration that makes particulate 16b laterally gradually step-down sealing 16 is had this structure of refringence of step-down gradually, light extraction efficiency also improves according to the shape of housing parts 51 and this housing parts 51.

[0252] remarks additionally, can form the related sealing of this variation 16 by carrying out repeatedly embedding moulding.

[0253] (the 9th embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the ninth embodiment of the present invention describes.

[0254] Figure 30 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the ninth embodiment of the present invention.At this, also represent and Fig. 1 and the identical structural factor of structural factor shown in Figure 7, the explanation of omitting these structural factors with identical symbol.

[0255] as shown in figure 30, the same with the 4th embodiment, in the related semiconductor light-emitting apparatus 40E of the 9th embodiment, led chip 12 utilizes the upper surface of led chip 12 and the interarea flip-chip installation method in opposite directions of substrate 31 is installed on the printed wiring substrate, this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0256] sealing 16 is made of the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.Just passable with the material the same as the material that constitutes sealing 16 with the material of the sealing 16 that constitutes first embodiment.But, in the 9th embodiment, be made as: make from the nearer medial region of led chip 12, particulate 16b shared ratio in composite material be higher than the outside that is in this medial region exterior lateral area, particulate 16b shared ratio in composite material.

[0257] like this, the same at the 6th embodiment with the 8th embodiment, in the 9th embodiment, also be higher than the refractive index value of the exterior lateral area that is in this medial region outside from led chip 12 refractive index value nearer, sealing 16 medial region.

[0258] in other words, according to described structure, because the refractive index of exterior lateral area that contact with air, sealing 16 is lower than the refractive index of the medial region that contacts with led chip 12, thereby the difference of the refractive index of the refractive index of the exterior lateral area of sealing 16 and air is less.Therefore, can lower the total reflection that cause at the interface of emergent light between sealing 16 and air, thereby the light resistance of sealing 16 and thermal endurance raising, and can further improve light extraction efficiency.At this, also can allow the interpolation concentration of particulate 16b from the inboard step-down gradually laterally; Also can allow interim ground of this interpolation concentration step-down.

[0259] in addition, in present embodiment, be hemispherical because for example utilize the embedding method of forming that sealing 16 is formed profile, so the total reflection of emergent light is further lowered.At this, higher and, can enumerate with presclerotic aqueous composite material and carry out the repeatedly method of embedding moulding in medial region in the lower method of exterior lateral area as the interpolation concentration that makes particulate 16b.In other words, as long as to carry out the embedding moulding with the mode of the adding proportion of composite material just passable to allow exterior lateral area be lower than medial region with the particulate 16b adding proportion in the composite material.At this moment, also can be such, select refractive index and be lower than other particulates refractive index, that constitute by inorganic material of particulate 16b of embedding moulding for the first time as the particulate 16b of for the second time later embedding moulding.Afterwards, can make described aqueous composite material become the sealing 16 that constitutes by composite material, form the structure of present embodiment by sclerosis.

[0260] in addition, because in the 9th embodiment, utilize the embedding method of forming that sealing 16 is formed profile and be hemispherical, so the total reflection of emergent light is further lowered.

[0261] remarks additionally, make sealing 16 comprise fluorescent material 16c at this.But, as mentioned above, adopting gallium phosphide (GaP) semiconductor under the situation of the green light LED device that constitutes etc., not need to make sealing 16 to comprise fluorescent material 16c as led chip 12.

[0262] (first variation of the 9th embodiment)

Figure 31 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of first variation of the ninth embodiment of the present invention.

[0263] as shown in figure 31, in the related semiconductor light-emitting apparatus 40F of first variation, with the interpolation concentration of particulate 16b laterally gradually the cross-sectional profile of the sealing 16 of step-down be made as quadrangle.

[0264], can utilize so that the particulate 16b in the outside of sealing 16 adds the method that mode that particulate 16b that concentration is lower than the inboard of sealing 16 adds concentration is repeatedly carried out transfer modling as the method that forms the encapsulant 16d in the related sealing 16 of this variation.

[0265] (second variation of the 9th embodiment)

Figure 32 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of second variation of the ninth embodiment of the present invention.

[0266] shown in figure 32, in the related semiconductor light-emitting apparatus 60E of second variation, led chip 12 utilizes flip-chip installation method to be installed on the recess 51a bottom surface in the housing parts 51 with recess 51a.

[0267] at this, the section shape that covers the sealing 16A of led chip 12 is a quadrangle.

[0268] in this variation, in the situation that white heat-resistant resin material is used as housing parts 51, or the interior sidewall surface of housing parts 51 has been carried out for example utilizing under the metallized situation of deposition etc. of aluminium metals such as (Al), the interior sidewall surface of this housing parts 51 plays the effect of reflecting surface.And, because the interior sidewall surface of housing parts 51 is made as the back taper that broadens upward from the below, so except the interpolation concentration that makes particulate 16b laterally gradually step-down sealing 16 is had this structure of refringence of step-down gradually, light extraction efficiency also improves according to the shape of housing parts 51 and this housing parts 51.

[0269] remarks additionally, can form the related sealing of this variation 16 by carrying out repeatedly embedding moulding.

[0270] in this variation, also can adopt following structure, that is: as illustrating in the 5th variation of the 7th embodiment, led chip 12 utilizes flip-chip installation method to be installed in structure on the recess 51a bottom surface in the housing parts 51 with recess 51a by secondary installing component 53.

[0271] (the tenth embodiment)

Figure 33 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the tenth embodiment of the present invention.At this, also represent and Fig. 6 and the identical structural factor of structural factor shown in Figure 10, the explanation of omitting these structural factors with identical symbol.

[0272] as shown in figure 33, the same with the 6th embodiment, in the related semiconductor light-emitting apparatus 30G of the tenth embodiment, led chip 12 with allow the back side of led chip 12 and substrate 31 interarea in opposite directions, so-called junction point is installed on the printed wiring substrate in the mode (installing up) of upside (junction-up), this printed wiring substrate comprises substrate 31, also comprises the first wiring 32A and the second wiring 32B at the interarea that optionally is formed on this substrate 31 and the back side at least.

[0273] sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A is with hemispherical direct covering semiconductor light-emitting apparatus chip 12; This second sealing 26B is with this first sealing of hemispherical direct covering 26A.

[0274] first sealing 26A is made of the resin material that is mixed with fluorescent material 16c; The second sealing 26B is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0275] Figure 34, expression adopts diameter at the zirconia (ZrO of 3nm to 10nm ₂) as making an addition to the particulate 16b among the second sealing 26B and the percent by volume of the relative basis material 16a of this particulate 16b being made as relation under 30% the situation, between light wavelength and the light transmittance.As seen from Figure 34, light transmittance reduces significantly in the short side of wavelength.At this, this phenomenon is called filtering effect.

[0276] the semiconductor light-emitting apparatus 30G related according to the tenth embodiment can access the effect the same with first embodiment, and because described filtering effect, the spectral component of red light district relatively increases as shown in figure 35.In other words, in the synthetic light that radiating light that led chip 12 is radiated and fluorescent material 16c are inspired, owing to the scattering that the existence of particulate 16b takes place, blue light region is to the spectral component decay of ultraviolet region, and the spectral component of red light district relatively increases.At this, in the semiconductor light-emitting apparatus that when measuring, uses, adopted shown in Figure 23, led chip 12 is installed in structure in the housing parts 51.The radiating light of led chip 12 is that peak wavelength is the blue light of 460nm, and the exciting light of fluorescent material 16c is that peak wavelength is the gold-tinted of 575nm.At this, fluorescent material 16c is to be that the orange light of 590nm is that the green glow of 535nm is allocated with fluorescent material and formed with fluorescent material and peak wavelength to peak wavelength.

[0277] like this, general color rendering index Ra just raises, and colour temperature descends, shown in [chart 2].At this, general color rendering index Ra is very high, means by the color rendition of the thing of certain light source photograph very good.Colour temperature is very low, means that light source is warm colour.

[0278] [chart 2]

	Comparative example	The present invention 1	The present invention 2
				Thickness	Do not have	0.2mm	1mm
Colour temperature	4400K	4400K	3900K
				Ra	74	76	74

[0279] at this, comparative example represents not to be provided with the situation of the structure of the second sealing 26B; The thickness that the present invention's 1 expression comprises the second sealing 26B of particulate 16b is the situation of 0.2mm; The thickness of the present invention's 2 expressions second sealing 26B is the situation of 1mm.

[0280] as seen, compare with comparative example, the general color rendering index under the present invention 1 the situation is higher by chart 2; Colour temperature under the present invention 2 the situation is than the low 400K of comparative example.At this, the duv of colour temperature (on the chromaticity coordinate from blackbody curve count poor) value is ± 0.002.

[0281] remark additionally, also can be made as first variation of following structure as the tenth embodiment, that is: the fluorescent material that can access green glow or gold-tinted is added on respectively among the first sealing 26A and the second sealing 26B.By this way, owing to be added on the influence of the particulate 16b among the second sealing 26B, the blue light region in the synthetic light is to the also decay significantly of spectral component of ultraviolet region, and the spectral component of red light district relatively increases.

[0282] also can be made as following structure as second variation, that is: first fluorescent material that can access green glow or gold-tinted is added among the first sealing 26A, and particulate 16b is added among the second sealing 26B with second fluorescent material that can access ruddiness.Like this, just absorption is from the green glow or the gold-tinted of first fluorescent material with second fluorescent material for ruddiness, and ruddiness is excited, thereby the spectral component of red light district further increases.Like this, general color rendering index Ra just further raises, and colour temperature further descends.

[0283] also can be made as following structure as the 3rd variation, that is: first fluorescent material that can access ruddiness is added among the first sealing 26A, and particulate 16b is added among the second sealing 26B with second fluorescent material that can access green glow or gold-tinted.Like this, ruddiness is green glow or gold-tinted with the luminous light that first fluorescent material does not just absorb second fluorescent material.Therefore, the conversion efficiency of the radiating light that radiated of led chip 12 just improves.

[0284] preferably such, the same with the 6th embodiment in the tenth embodiment and each variation, make the refractive index of the refractive index of the first sealing 26A less than led chip, make the refractive index of the refractive index of the second sealing 26B less than the first sealing 26A.Like this, light extraction efficiency just improves.

[0285] remarks additionally, radiation light wavelength at led chip 12 is not to be blue light region, but be that the following royal purple light district of 410nm is under the situation of the following ultraviolet region of 380nm, by except the various fluorescent materials that green glow is used and ruddiness is used or gold-tinted is used, also blue light being added among the first sealing 26A at least with fluorescent material, can access the synthetic light of white.

[0286] method of the profile of semiconductor light-emitting apparatus 30G and installation led chip 12 is not limited to appearance shown in Figure 33, also can be made as and first to the 5th variation of second embodiment, the 6th embodiment or the same structure of first to the 6th variation of the 7th embodiment.

[0287] (the 4th variation of the tenth embodiment)

Figure 36 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 4th variation of the tenth embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 14, the explanation of omitting these structural factors with identical symbol.

[0288] as shown in figure 36, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50F of the 4th variation, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0289] first sealing 26A is made of the resin material that is mixed with fluorescent material 16c.The second sealing 26B is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0290] in the 4th variation, the first sealing 26A form with led chip 12 contact and cover this led chip 12 around; The second sealing 26B is arranged on the upper surface of housing 51 in the mode parallel with the bottom surface of housing 51.Therefore, between the second sealing 26B and the first sealing 26A, be formed with space part 51b.

[0291] adds, in space part 51b, be formed with first lens 70 that cover the first sealing 26A, on the second sealing 26B, be formed with second lens section 71 that covers this second sealing 26B.At this,, for example can adopt silicones, epoxy resin, olefin resin, allyl resin, urea resin, imide resin, polycarbonate resin or glass or the like as first lens 70 and second lens 71.Remark additionally, might not need to be provided with second lens 71.

[0292] as mentioned above, according to this variation, even semiconductor light-emitting apparatus has the structure that is provided with space part 51b between the first sealing 26A and the second sealing 26B, because filtering effect also can access effect among the tenth embodiment, that general color rendering index increases and colour temperature descends.

[0293] can utilize the formation method of the embedding method of forming as each related lens 70,71 of this variation.The second sealing 26B is can be tabular by forming in advance, this plate object is fixed on to form on the upper surface of housing 51 again.

[0294] (the 5th variation of the tenth embodiment)

Figure 37 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 5th variation of the tenth embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 14, the explanation of omitting these structural factors with identical symbol.

[0295] as shown in figure 37, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50G of the 5th variation of the tenth embodiment, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0296] first sealing 26A is made of the resin material that is mixed with fluorescent material 16c; The second sealing 26B is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0297] in the 5th variation, the first sealing 26A form with led chip 12 contact and cover this led chip 12 around; The second sealing 26B is filled among the recess 51a of this housing 51 in the mode on the top of the recess 51a of reservation housing 51.Be formed with space part 51b on the top of recess 51a.

[0298] adds, on the upper surface of housing 51, be formed with lens 70 in the mode that covers space part 51b.

[0299] remarks additionally, have under the situation of lens function, might not need to be provided with lens 70 at the first sealing 26A.

[0300] as mentioned above, according to this variation, even semiconductor light-emitting apparatus has the structure that is provided with space part 51b between the second sealing 26B and lens 70, because filtering effect also can access effect among the tenth embodiment, that general color rendering index increases and colour temperature descends.

[0301] remark additionally, the lens 70 that this variation is related are can be by carrying out moulding with shaping mould etc. in advance, this article shaped are fixed on to form on the upper surface of housing 51 again.

[0302] (the 6th variation of the tenth embodiment)

Figure 38 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 6th variation of the tenth embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 37, the explanation of omitting these structural factors with identical symbol.

[0303] as shown in figure 38, the related semiconductor light-emitting apparatus 80 of the 6th variation of the tenth embodiment comprises reflector 81, this reflector 81 for example is made of heat-resistant resin materials such as liquid crystal polymers, on the upper part, be fixed with the first lead-in wire 52A and the second lead-in wire 52B at least, have in inside and to be the reflecting part 81a that concavity promptly is the planar or parabolic shape of hemisphere, double as housing.Remark additionally, if consider the reflection that visible light is carried out, just the most handy white heat-resistant resin material perhaps metallizes with metal pair reflecting part 81a such as aluminium as this reflector 81.

[0304] led chip 12, utilize installation method up to be fixed on the lower surface of the first lead-in wire 52A.In other words, led chip 12 is mounted, make the upper surface of led chip 12 and reflecting part 81a the bottom in opposite directions.

[0305] on the reflecting surface of reflecting part 81a, is formed with the luminescent coating 27 that constitutes by the resin material that is mixed with fluorescent material 16c, between luminescent coating 27 and led chip 12, is formed with space part 81b.On the upper surface of reflector 81, comprise that with covering the mode of the space part 81b of each bar lead-in wire 52A, 52B is formed with sealing 16.Sealing 16 is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0306] on sealing 16, is formed with lens 70.But, might not need to be provided with lens 70.

[0307] as mentioned above, led chip 12 is arranged near the focus of the reflecting part 81a in the reflector 81 structure, also can accesses effect of the present invention even semiconductor light-emitting apparatus has.

[0308] remarks additionally, also the sealing resin material can be filled among the space part 81b of reflector 81, and then also can fill in the space part 81b of reflector 81 forming the different composite material of composite material identical or refractive index with sealing 16.

[0309] (the 11 embodiment)

Figure 39 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 11st embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 14, the explanation of omitting these structural factors with identical symbol.

[0310] as shown in figure 39, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50H of the 11 embodiment, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0311] with white heat-resistant resin material as housing parts 51, perhaps on the interior sidewall surface of the recess 51a of housing parts 51 and for example utilize the metallization of the deposition etc. of aluminium metals such as (Al) on the bottom surface, make the inner surface of this housing parts 51 play the effect of reflecting surface.

[0312] sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A directly covers led chip 12, is filled in the bottom of the recess 51a of housing parts 51; This second sealing 26B is formed on this first sealing 26A, is stratiform.

[0313] first sealing 26A is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a; The second sealing 26B is made of the resin material that is mixed with fluorescent material 16c.

[0314] according to described structure, by be added on fluorescent material 16c reflection among the second sealing 26B, from the part of the radiating light of led chip 12 and from interior sidewall surface or the bottom surface of the recess 51a of a part in housing parts 51 of the luminous light of fluorescent material 16c, reflect with the interface between the first sealing 26A, once more through the first sealing 26A.

[0315] the semiconductor light-emitting apparatus 50H related according to the 11 embodiment can access the effect the same with first embodiment, and since described blue light region to the filtering effect of the synthetic optical attenuation of ultraviolet region, the spectral component of red light district relatively increases.Like this, general color rendering index just raises, and colour temperature descends.

[0316] remarks additionally, also can set first variation like this as the 11 embodiment, that is: the radiating light at led chip 12 is under the situation of blue light, and the fluorescent material that can access green glow or gold-tinted is added on respectively among the first sealing 26A and the second sealing 26B.Like this, just make blue light region in the synthetic light to the spectral component decay of ultraviolet region by being added on particulate 16b among the first sealing 26A, the spectral component of red light district is increase relatively still.

[0317] also can set like this as second variation, that is: particulate 16b is added among the first sealing 26A with first fluorescent material that can access green glow or gold-tinted, second fluorescent material that can access ruddiness is added among the second sealing 26B.Like this, just absorption is from the green glow or the gold-tinted of first fluorescent material with second fluorescent material for ruddiness, and ruddiness is excited, thereby the spectral component of red light district further increases.Like this, general color rendering index just further raises, and colour temperature further descends.

[0318] also can set like this as the 3rd variation, that is: particulate 16b is added among the first sealing 26A with first fluorescent material that can access ruddiness, second fluorescent material that can access green glow or gold-tinted is added among the second sealing 26B.Like this, ruddiness is green glow or gold-tinted with the luminous light that first fluorescent material does not just absorb second fluorescent material.Therefore, the conversion efficiency of the radiating light that radiated of led chip 12 improves.

[0319] preferably such, in the 11 embodiment and each variation, make the refractive index of the refractive index of the first sealing 26A less than led chip 12 with the 6th embodiment the samely, make the refractive index of the refractive index of the second sealing 26B less than the first sealing 26A.Like this, light extraction efficiency just improves.

[0320] profile of semiconductor light-emitting apparatus 50H and method that led chip 12 is installed are not defined to appearance shown in Figure 39, can be made as the same structure of first to the 6th variation with first to the 5th variation, the 7th embodiment or the 7th embodiment of second embodiment, the 6th embodiment, the 6th embodiment yet.

[0321] (the 4th variation of the 11 embodiment)

Figure 40 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 4th variation of the 11st embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 14, the explanation of omitting these structural factors with identical symbol.

[0322] as shown in figure 40, in the related semiconductor light-emitting apparatus 50I of the 4th variation, sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A is formed on the downside of led chip 12 as bottom; This second sealing 26B is formed on this first sealing 26A in the mode that covers led chip 12, fills the recess 51a of housing parts 51.

[0323] particularly, the first sealing 26A is formed on the bottom surface of housing parts 51.Led chip 12 utilizes the method for installing up on the fixing usefulness of the chip pastes 13 that is fixed on above the first sealing 26A visible transparent.With white heat-resistant resin material as housing parts 51, and then, make the interior sidewall surface of this housing parts 51 play the effect of reflecting surface on the bottom surface of the recess 51a of housing parts 51 and for example utilize the metallization of the deposition etc. of aluminium metals such as (Al) on the interior sidewall surface.

[0324] first sealing 26A is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a; The second sealing 26B is made of the resin material that is mixed with fluorescent material 16c.

[0325] according to described structure, by be added on fluorescent material 16c reflection among the second sealing 26B, reflect at the recess 51a of housing parts 51 and the interface between the first sealing 26A from the part of the radiating light of led chip 12 and from the part of the exciting light of fluorescent material 16c, once more through the first sealing 26A.Consequently, because described filtering effect, the spectral component of red light district relatively increases.Therefore, general color rendering index raises, and colour temperature descends.

[0326] and, because promptly be added with particulate 16b among the first sealing 26A, so the exothermicity of led chip 12 improves at the bottom of led chip 12.

[0327] because fixing as chip, and metallized on the bottom surface with the recess 51a of metal pair housing parts 51, so the light extraction efficiency raising with pastes 13 with transparent pastes.

[0328] remarking additionally, also can be such, also the second sealing 26B is added particulate, makes this second sealing 26B become composite material.In this case, preferably select the refractive index that makes the second sealing 26B particulate less than the refractive index of the first sealing 26A.

[0329] (the 5th variation of the 11 embodiment)

Figure 41 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 5th variation of the 11st embodiment of the present invention.At this, with the identical symbolic representation structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 38.

[0330] as shown in figure 41, the related semiconductor light-emitting apparatus 80A of the 5th variation of the 11 embodiment comprises reflector 81, this reflector 81 for example is made of heat-resistant resin materials such as liquid crystal polymers, on the upper part, be fixed with the first lead-in wire 52A and the second lead-in wire 52B at least, have in inside and to be the reflecting part 81a that concavity promptly is the planar or parabolic shape of hemisphere, double as housing.Remark additionally, the most handy white heat-resistant resin material perhaps metallizes with metal pair reflecting part 81a such as aluminium as this reflector 81.

[0331] led chip 12, utilize installation method up to be fixed on the lower surface of the first lead-in wire 52A.In other words, led chip 12 is mounted, make the upper surface of led chip 12 and reflecting part 81a the bottom in opposite directions.

[0332] on the reflecting surface of reflecting part 81a, is formed with the luminescent coating 27 that constitutes by the resin material that is mixed with fluorescent material 16c, between luminescent coating 27 and led chip 12, is filled with sealing 16.Sealing 16 is made of the encapsulant 16d that composite material constituted that comprises basis material 16a and particulate 16b, and described particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0333] on the upper surface of reflector 81, comprises that with covering the mode of the space part 81b of each bar lead-in wire 52A, 52B is formed with lens 70.Remark additionally, might not need to be provided with lens 70.

[0334] according to described structure, by be added on fluorescent material 16c reflection in the luminescent coating 27, reflect at the reflecting part 81a of reflector 81 from the part of the radiating light of led chip 12 and from the part of the luminous light of fluorescent material 16c, see through sealing 16 once more.Consequently, because described filtering effect, the spectral component of red light district relatively increases.Therefore, general color rendering index raises, and colour temperature descends.

[0335] remarks additionally, also can be made as following structure, that is: as the 6th embodiment, sealing 16 is made as the double-decker with first sealing and second sealing at least, and the refractive index of second sealing that makes the outside that is positioned at first sealing is less than the refractive index of first sealing.

[0336] (the 12 embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the 12nd embodiment of the present invention describes.

[0337] Figure 42 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 12nd embodiment of the present invention.At this, also represent and Fig. 8 and the identical structural factor of structural factor shown in Figure 14, the explanation of omitting these structural factors with identical symbol.

[0338] as shown in figure 42, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50J of the 12 embodiment, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0339] sealing 26 comprises the first sealing 26A and the second sealing 26B, and this first sealing 26A directly covers led chip 12, is filled in the bottom of the recess 51a of housing parts 51; This second sealing 26B is formed on this first sealing 26A across the 3rd sealing 26C, is stratiform.

[0340] the first sealing 26A and the second sealing 26B, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the first particulate 16b, the described first particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0341] the 3rd sealing 26C is made of the encapsulant 16d that composite material constituted that comprises the basis material 16a and the second particulate 17b, the described second particulate 17b is made of inorganic material such as the zinc oxide that can absorb ultraviolet light, titanium oxide or cerium oxide, has been evenly dispersed in the inside of this basis material 16a.

[0342] the semiconductor light-emitting apparatus 50J related according to the 12 embodiment, can access the effect the same, and between the first sealing 26A and the second sealing 26B, be provided with the 3rd sealing 26C as the UV Absorption layer that absorbs ultraviolet light with first embodiment.Therefore, being contained in light component in the radiating light that led chip 12 radiated, ultraviolet region is absorbed by the 3rd sealing 26C.Consequently, can enough resistances to water and excellent heat resistance, but easily because of the epoxy resin of ultraviolet light yellowing as the basis material 16a that constitutes the second sealing 26B.

[0343] remark additionally, preferably sealing 26 is made as following structure, that is: the refractive index of the second sealing 26B is less than the refractive index of the 3rd sealing 26C, and the refractive index of the 3rd sealing 26C is less than the refractive index of the first sealing 26A.

[0344] the first sealing 26A and the second sealing 26B might not need to comprise the second particulate 17b.As long as it is just passable that fluorescent material 16c is contained in any sealing among the first sealing 26A and the 3rd sealing 26C.But the radiating light that is radiated at led chip 12 mainly is under the situation of ultraviolet light, and the first sealing 26A need comprise fluorescent material 16c.

[0345] profile of semiconductor light-emitting apparatus 50J and method that led chip 12 is installed are not defined to appearance shown in Figure 43, can be made as the same structure of first to the 6th variation with first to the 5th variation, the 7th embodiment or the 7th embodiment of second embodiment, the 6th embodiment, the 6th embodiment yet.

[0346] (the 13 embodiment)

Below, with reference to accompanying drawing, the semiconductor light-emitting apparatus related to the 13rd embodiment of the present invention describes.

[0347] Figure 43 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of the 13rd embodiment of the present invention.At this, with the identical symbolic representation structural factor identical, the explanation of omitting these structural factors with structural factor shown in Figure 8.

[0348] as shown in figure 43, the same with the 5th embodiment, in the related semiconductor light-emitting apparatus 50K of the 13 embodiment, on the recess 51a bottom surface in the housing parts 51 that led chip 12 utilizes installation method up to be fixed on to have recess 51a.

[0349] sealing 26 is made of the first sealing 26A and the second sealing 26B, and this first sealing 26A directly covers led chip 12, is filled among the recess 51a of housing parts 51; This second sealing 26B is formed on the upper surface of housing parts 51 in the mode that covers the first sealing 26A.

[0350] first sealing 26A, constitute by the encapsulant 16d that composite material constituted and the fluorescent material 16c that comprise the basis material 16a and the first particulate 16b, the described first particulate 16b is made of inorganic material, has been evenly dispersed in the inside of this basis material 16a.

[0351] second sealing 26B, constitute by the encapsulant 16d that composite material constituted that comprises the basis material 16a and the second particulate 17b, this second particulate 17b is made of inorganic material such as the zinc oxide that can absorb ultraviolet light, titanium oxide or cerium oxide, has been evenly dispersed in the inside of this basis material 16a.Like this, by using composite material as encapsulant 16d, just not only can obtain the effect that particulate 16b absorbs ultraviolet light, the light of ultraviolet light wavelength is also scattering easily owing to the influence of composite material.Therefore, the effect that sees through of inhibition ultraviolet light is high.

[0352] the semiconductor light-emitting apparatus 50K related according to the 13 embodiment can access the effect the same with first embodiment.And, because the first sealing 26A is provided with the second sealing 26B as the UV Absorption layer that absorbs ultraviolet light, absorbed by the second sealing 26B so be contained in light component in the radiating light that led chip 12 radiated, ultraviolet region.Consequently, can prevent the unnecessary ultraviolet light of this semiconductor light-emitting apparatus 50K output.

[0353] adds, be arranged on the outside of the first sealing 26A, so can also prevent deterioration that ultraviolet light caused, encapsulant 16d and fluorescent material 16c from outside incident because absorb the second sealing 26B of ultraviolet light.

[0354] remarks additionally the zone till the wavelength zone of the radiating light of led chip 12 is not defined to from the blue light region to the ultraviolet region.Therefore, semiconductor light-emitting apparatus 50K is not defined to the white light LEDs device.

[0355] first sealing 26A might not need to comprise the first particulate 16b.

[0356] method of the profile of semiconductor light-emitting apparatus 50K and installation led chip 12 is not defined to appearance shown in Figure 43, can be made as the same structure with first to the 4th embodiment yet.

[0357] (variation of the 13 embodiment)

Figure 44 is schematically represented as the cross-section structure of the white light LEDs device of the related semiconductor light-emitting apparatus of a variation of the 13rd embodiment of the present invention.

[0358] as shown in figure 44, in the related semiconductor light-emitting apparatus 50L of this variation, the second sealing 26B that comprises second particulate 17 that can absorb ultraviolet light not only is formed on the upper surface of housing parts 51, also be formed on the side and bottom surface of this housing parts 51 entire circumference of covering shell parts 51.

[0359] according to described structure, can access the effect the same with the 13 embodiment, can also improve the exothermicity of housing parts 51.

[0360] as form covering shell parts 51 around the method for the second sealing 26B, for example can utilize the housing parts 51 that after forming the first sealing 26A, will be formed with the first sealing 26A to be immersed in infusion process among the aqueous encapsulant 16d that second particulate 17 is scattered here and there.

[0361] remarks additionally, in the variation of first to the 4th variation, the 12 embodiment, the 13 embodiment and the 13 embodiment of first to the 7th variation of first to the 6th variation of the 6th embodiment, the 6th embodiment, the 7th embodiment, the 7th embodiment, the tenth embodiment, the 11 embodiment, the 11 embodiment, with identical materials as the basis material 16a of the first sealing 26A and the basis material 16a of the second sealing 26B.Like this, just can improve the mutual close property of sealing, be made as the structure that is difficult for causing peeling off of sealing etc.Therefore, structure shown in is very suitable.The close property that sealing is mutual is bigger by the degree about the mutual degree of engagement of basis material.And using under the situation of composite material as sealing, the ratio of basis material is less.So, make the basis material of each sealing identical, close property is improved.

[0362] in above-mentioned all embodiment and variation thereof, mainly the white light LED matrix is illustrated as semiconductor light-emitting apparatus.But, the present invention is not defined to the white light LEDs device, and the present invention is to effective with the semiconductor light-emitting apparatus that adds fine-grained encapsulant sealing LED chip.

[0363] remark additionally, when using composite material as sealing, preferably no matter sealing has single layer structure or sandwich construction, all is made as the attenuation degree small construction of the light transmission capacity of issued light.But, if according to the structure of purposes decision sealing just can, comprise ultraviolet light and want to remove under the situations such as situation of this ultraviolet light at the situation of as the tenth embodiment, controlling color rendering and LED, with the decay light of corresponding wavelength of composite material.

[0364] degree of the Rayleigh scattering that takes place owing to the influence of composite material is according to the difference of the melting concn of the size of particulate, particulate or sealing thickness and difference, also different according to the difference that sees through light wavelength in addition, it is short more particularly to have light wavelength, big more this feature of scattering degree.Therefore, also can occur following situation, that is: since the relation of the sealing structure that emission wavelength or composite material constituted of the led chip that adopts see through light quantity and be affected.

[0365] as the composite material of sealing according to the nephelometric turbidity unit of the emission wavelength decision of semiconductor light-emitting elements less than 0.3 condition under, the attenuation of issued light when seeing through is less, thereby light extraction efficiency improves.At this moment, the Rayleigh scattering composition in the light transmittance of sealing is approximately less than 25%.

[0366] is more preferably nephelometric turbidity unit is made as below 0.2.Like this, the attenuation of light when seeing through is just littler, thereby light extraction efficiency improves.Remark additionally, the Rayleigh scattering composition in the light transmittance at this moment is about below 20%.Particularly when nephelometric turbidity unit 0.1 when following, Rayleigh scattering composition in the light transmittance is about below 10%, wherein when nephelometric turbidity unit 0.05 when following, the Rayleigh scattering composition in the light transmittance is below about 5%, this composite material roughly is transparent, and the attenuation of light when seeing through has been out of question.

[0367] at this, nephelometric turbidity unit is the value that the product α t with the thickness t of the Rayleigh scattering attenuation coefficient α of composite material part and this composite material part represents.The method of measurement of this nephelometric turbidity unit is as follows: measure the light transmittance T (%) of the composite material part with specific thickness t, utilize the value of this light transmittance T to obtain this nephelometric turbidity unit with the formula of nephelometric turbidity unit α t=-ln (T/100).At this, ln is a natural logrithm.Can obtain Rayleigh scattering attenuation coefficient α with thickness by removing nephelometric turbidity unit.Rayleigh scattering attenuation coefficient α is that particle diameter, refractive index or the material relevant with combined amount according to particulate formed the material parameter that determines.By learning the value of this Rayleigh scattering attenuation coefficient α, can easily carry out device optical designs such as sealing thickness.

[0368], shades of colour is enumerated respectively at other examples described in first embodiment, that can be used in fluorophor of the present invention at this.

I. blue light fluorophor

(1) halogen-phosphate (Halophosphate) fluorophor: (Sr, Ba) ₁₀(PO ₄) ₆Cl ₂: Eu ²⁺, Sr ₁₀(PO ₄) ₆Cl ₂: Eu ²⁺

(2) silicate (Silicate) fluorophor: Ba ₃MgSi ₂O ₈: Eu ²⁺

Ii. blue green light fluorophor

(1) chlorate MClO 3 fluorescent substance: Sr ₄Al ₁₄O ₂₅: Eu ²⁺

(2) silicate phosphor: Sr ₂Si ₃O ₈2SrCl ₂: Eu ²⁺

Iii. green glow fluorophor

(1) chlorate MClO 3 fluorescent substance: (Ba, Sr, Ca) Al ₂O ₄: Eu ²⁺

(2) silicate (Silicate) fluorophor: (Ba, Sr) ₂SiO ₄: Eu ²⁺

(3) alpha-sialon (SIALON) fluorophor: Sr _1.5Al ₃Si ₉N ₁₆: Eu ²⁺,

Ca-α-SiAlON:Yb ²⁺

(4) β-Sialon fluorophor: β-Si ₃N ₄: Eu ²⁺

(5) oxynitrides fluorophor

Silicate oxygen base nitride (Oxonitrido-silicate):

(Ba，Sr，Ca)Si ₂O ₂N ₂:Eu ²⁺

Aluminosilicate oxygen base nitride (Oxonitrido-aluminosilicate):

(Ba，Sr，Ca) ₂Si ₄AlON ₇:Ce ³⁺，(Ba，Sr，Ca)Al _2-xSi _xO _4-xN _x:Eu ²⁺(0＜x＜2)

(6) nitride phosphor

Silicate nitride (Nitrido-silicate) fluorophor:

(Ba，Sr，Ca) ₂Si ₅N ₈:Ce ³⁺

(7) sulphide phosphor

Gallium sulphur compound (Thiogallate): SrGa ₂S ₄: Eu ²⁺

(8) garnet fluorophor: Ca ₃Sc ₂Si ₃O ₁₂: Ce ³⁺, BaY ₂SiAl ₄O ₁₂: Ce ³⁺,

Y ₃(Al，Ga) ₅O ₁₂:Ce ³⁺

(9) oxide phosphor: CaSc ₂O ₄: Ce ³⁺

Iv. gold-tinted fluorophor

(1) silicate (Silicate) fluorophor: (Sr, Ba) ₂SiO ₄: Eu ²⁺, Sr ₃SiO ₅: Eu ²⁺

(2) garnet fluorophor: (Y, Gd) ₃Al ₅O ₁₂: Ce ³⁺, Y ₃Al ₅O ₁₂: Ce ³⁺, Pr ³⁺

(3) sulphide phosphor

Gallium sulphur compound: CaGa ₂S ₄: Eu ²⁺

(4) alpha-sialon fluorophor:

Ca-α-SiAlON:Eu ²⁺，

(0.75 (Ca _0.9Eu _0.1) O2.25AlN3.25Si ₃N ₄: Eu ²⁺, Ca _1.5Al ₃Si ₉N ₁₆: Eu ²⁺Or the like)

V. orange light fluorophor

(1) silicate (Silicate) fluorophor: (Sr, Ca) ₂SiO ₄: Eu ²⁺

(2) garnet fluorophor: Gd ₃Al ₅O ₁₂: Ce ³⁺

(3) alpha-sialon fluorophor: Ca-α-SiAlON:Eu ²⁺

Vi. red line emitting phosphors

(1) sulphide phosphor: (Sr, Ca) S:Eu ²⁺, La ₂O ₂S:Eu ³⁺, Sm ³⁺

(2) silicate (Silicate) fluorophor: Ba ₃MgSi ₂O ₈: Eu ²⁺, Mn ²⁺

(3) nitride phosphor or oxynitrides fluorophor: (Ca, Sr) SiN ₂: Eu ²⁺, (Ca, Sr) AlSiN ₃: Eu ²⁺, Sr ₂Si _5-xAl _xO _xN _8-x: Eu ²⁺(0≤x≤1)

Remark additionally, also can use metal complex, organic dyestuff or pigment equiwavelength coversion material to replace fluorophor.

[0369] can expect that the particulate that is added in the translucent material (luminescent coating, encapsulant) brings following effect, that is: the adjustment of the refractive index of the raising of thixotropy (thixotropy), light scattering effect, encapsulant and raising of conductivity of heat or the like.Not only can be used in the particulate shown in first embodiment as particulate, for example also can be adopted as the BaSO of metallic compound ₄, ZnS or V ₂O ₅, or the mixture of these materials as particulate.The medium particle diameter of particulate at tens nm to hundreds of nm.

[0370] as substrate 31 or pedestal that led chip 12 is installed, can adopt is AlN, Al ₂O ₃, BN, AlN, MgO, ZnO, SiC or C or contain the pottery of the mixture of at least two kinds of materials in these materials; Also can adopt is aluminium, copper, iron or gold or the metal that contains the alloy of at least two kinds of metals in these metals; Also can adopt expoxy glass.

[0371] as the reflector that is arranged on housing parts 51 or the reflector 81, not only can adopt aluminium, also can adopt is silver, gold, nickel, rhodium or palladium or the metal that contains the alloy of at least two kinds of materials in these materials.

[0372] as the basis material 16a of encapsulant 16d, can adopt is epoxy resin, silicones, allyl resin, urea resin, imide resin, polycarbonate resin, polyphenylene sulfide, liquid crystal polymer resin or acrylonitrile-butadiene-styrene (ABS) (ABS) resin or the resin that contains the mixture of at least two kinds of materials in these materials.Can adopt quartz or thermal endurance hard glass as cover glass (cap glass).Can adopt low-melting glass as glass for sealing.

[0373], can adopt nitrogen, argon or dry air as the sealing gas that is used for led chip is sealed.

-industrial applicibility-

[0374] according to the present invention, can access the semiconductor light-emitting apparatus that is made of high LED of long service life and brightness etc., the present invention to semiconductor light-emitting apparatus of forming by the resin-sealed semiconductor die package that will be formed with light-emitting component etc. of great use.

Claims (38)

1. semiconductor light-emitting apparatus, comprise emit wavelength blue light region to the semiconductor chip of the light of ultraviolet region and be formed on that described light passes through pass through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises encapsulant and fluorescent material, the sealing material is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside.

2. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing form cover described semiconductor chip around.

3. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing forms with described semiconductor chip and contacts.

4. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing is made of described encapsulant; This second sealing is formed on the outside of this first sealing, comprises described fluorescent material.

5. semiconductor light-emitting apparatus according to claim 4 is characterized in that:

Described semiconductor light-emitting apparatus also comprises: reflection part, this reflection part are arranged on the below and the side at least of the described semiconductor chip in described first sealing, allow described light reflect.

6. semiconductor light-emitting apparatus according to claim 5 is characterized in that:

Described encapsulant is the bottom of fixing described semiconductor chip and being supported by described reflection part with the pastes with transparency.

7. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing is made of described encapsulant; This second sealing is formed on the outside of this first sealing;

Described particle is made of the material of the light that absorbs ultraviolet region.

8. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing comprises described fluorescent material; This second sealing is formed on the outside of this first sealing, is made of described encapsulant.

9. according to each the described semiconductor light-emitting apparatus in the claim 4 to 8, it is characterized in that:

The profile of described first sealing and described second sealing is hemispherical.

10. according to each the described semiconductor light-emitting apparatus in the claim 4 to 8, it is characterized in that:

The cross-sectional profile of described first sealing is quadrangle, and the profile of described second sealing is hemispherical.

11. each the described semiconductor light-emitting apparatus according in the claim 4 to 8 is characterized in that:

The cross-sectional profile of described first sealing and described second sealing is quadrangle.

12. each the described semiconductor light-emitting apparatus according in the claim 4 to 8 is characterized in that:

The profile of described first sealing is hemispherical, and the cross-sectional profile of described second sealing is quadrangle.

13. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and described sealing is made of first sealing that covers described semiconductor chip and second sealing that is formed on the outside of this first sealing;

Described first sealing, according to first refractive index of described light wavelength decision, be higher than described second sealing, according to second refractive index of described light wavelength decision.

14. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The composition that is contained in the described particle in described first sealing is different with the composition of described particle in being contained in described second sealing.

15. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

Described particle in described first sealing shared ratio in described composite material is higher than described particle in described second sealing shared ratio in described composite material.

16. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The profile of described first sealing and described second sealing is hemispherical.

17. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The cross-sectional profile of described first sealing is quadrangle, and the profile of described second sealing is hemispherical.

18. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The cross-sectional profile of described first sealing and described second sealing is quadrangle.

19. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The profile of described first sealing is hemispherical, and the cross-sectional profile of described second sealing is quadrangle.

20. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and, be set at from from the near medial region of described semiconductor chip zone step-down gradually laterally according to the refractive index of described light wavelength decision.

21. semiconductor light-emitting apparatus according to claim 20 is characterized in that:

In described sealing, the described particle shared ratio in described composite material in the near medial region of described semiconductor chip is higher than described particle in the exterior lateral area in the outside that is in this medial region shared ratio in described composite material.

22. semiconductor light-emitting apparatus according to claim 20 is characterized in that:

In the described particle in being contained in described sealing, the composition of particle of inboard that is contained in described sealing is different with the composition of the particle in the outside that is contained in described sealing.

23. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and described sealing is made of first sealing that covers described semiconductor chip and second sealing that is formed on the outside of this first sealing;

Described second sealing comprises and is used as particle described particle, that be made of the material of the light that absorbs ultraviolet region.

24. semiconductor light-emitting apparatus according to claim 23 is characterized in that:

Described second sealing forms: the top, below and the side that cover described semiconductor chip.

25. semiconductor light-emitting apparatus, comprise that emit wavelength is at the semiconductor chip of blue light region to the light of ultraviolet region, what be formed on that described light passes through passes through sealing at least a portion zone on the path, support the support component of described semiconductor chip, and pastes fixing described semiconductor chip and described support component, that have the transparency, it is characterized in that:

Described pastes is made of the composite material that comprises basis material and particle, and described particle is made of inorganic material, has been dispersed in this basis material, and the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside;

Described particle is made of the material of the light that absorbs ultraviolet region.

26. each the described semiconductor light-emitting apparatus according in the claim 13 to 25 is characterized in that:

Described sealing comprises fluorescent material.

27. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described particle is made of inorganic compound.

28. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described basis material is made of resin material.

29. semiconductor light-emitting apparatus according to claim 28 is characterized in that:

Described resin material is an inorganic macromolecule material.

30. semiconductor light-emitting apparatus according to claim 28 is characterized in that:

Described resin material is a high-molecular organic material.

31. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described basis material is made of the material to visible transparent.

32. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described composite material is to visible transparent.

33. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

The refractive index according to the decision of described light wavelength of described particle is higher than the refractive index according to described light wavelength decision of described basis material, and equates with the refractive index of described semiconductor chip or below the refractive index of this semiconductor chip.

34. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described particle in described composite material shared percent by volume more than 5% and below 60%.

35. each the described semiconductor light-emitting apparatus according in claim 1 to 3 and 20 to 25 is characterized in that:

The profile of described sealing is hemispherical.

36. each the described semiconductor light-emitting apparatus according in claim 1 to 3 and 20 to 25 is characterized in that:

The cross-sectional profile of described sealing is quadrangle.

37. each the described semiconductor light-emitting apparatus according in the claim 1 to 4,7,8 and 13 to 25 is characterized in that:

Described semiconductor light-emitting apparatus also comprises: reflection part, this reflection part are arranged in the zone of side of the described semiconductor chip in the described sealing, allow described light reflection.

38., it is characterized in that according to the described semiconductor light-emitting apparatus of claim 37:

The section shape of described sealing is following narrow and back taper last hem width.

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