CN101000911A - Semiconductor device having IGBT and diode - Google Patents
Semiconductor device having IGBT and diode Download PDFInfo
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- CN101000911A CN101000911A CN 200710002236 CN200710002236A CN101000911A CN 101000911 A CN101000911 A CN 101000911A CN 200710002236 CN200710002236 CN 200710002236 CN 200710002236 A CN200710002236 A CN 200710002236A CN 101000911 A CN101000911 A CN 101000911A
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Abstract
A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.
Description
Technical field
The present invention relates to have the semiconductor device of IGBT and diode.
Background technology
The inverter circuit that is used to drive such as the motor even load is to be used to switch direct current and the converter that exchanges.Therefore, this converter is converted to alternating voltage with direct voltage, makes that inverter circuit is an electric.The inverter circuit that is used to drive inductor motor (inductive type motor) comprises IGBT (that is igbt) and FWD (that is fly-wheel diode).IGBT provides switching device.When IGBT turn-offed, the FWD by-pass was crossed the electric current of motor, made the FWD control flows cross the constant switching manipulation with counteracting IGBT of electric current of motor.Particularly, the IGBT electric coupling makes predetermined voltage is applied to motor between DC power supply and motor.When IGBT turn-offed, the electric current that flows through motor flowed back to DC power supply by FWD, and this is because the energy of the reactance L of motor accumulation.Therefore, reverse direct voltage is imposed on motor.Therefore, the switching manipulation of the IGBT that provides applies alternating voltage and does not need fast shut-off to flow through the electric current of motor by DC power supply.Because inverter circuit provides these operations, therefore need provide FWD with the IGBT reverse parallel connection.Therefore, form a pair of FWD and IGBT, make IGBT and FWD each other differential concatenation be connected.
Fig. 8 shows the example conduct and comparison of the present disclosure of semiconductor device 90.This device is used for inverter circuit to drive such as the motor even load.This device comprises IGBT unit and diode, and they are formed in the same Semiconductor substrate.Fig. 9 shows the equivalent electric circuit of the device 90 among Fig. 8.
Groove T1 is formed in the device 90.Groove T1 passes the N conductivity regions 3 and the P conductive type layer 2 of main surface side, and arrives N-conductive type semiconductor substrate 1.
Therefore, in device 90, main N district 3 provides the emitter region of IGBT unit 90i, and P conductive type layer 2 provides the channel layer of IGBT unit 90i, and the P district 5 at the back side provides the collector area of IGBT unit 90i.In addition, the border between substrate 1 and the P conductive type layer 2 provides the PN junction of diode 90d, and main P district 4 provides the anode region of diode 90d, and the N district 6 at the back side provides the cathodic region of diode 90d.As shown in Figure 9, in device 90, IGBT unit 90i and diode 90d are connected in parallel to each other.
As the diode 90d in the device 90 during as the FWD of inverter circuit, current waveform is important when switching under the situation of off state diode reverse recovery from conducting state at diode.
Figure 10 A shows the evaluation circuit (evaluation circuit) of the current waveform that is used to measure the electric current that flows through diode 90d.Figure 10 B is the sampling of this current waveform.
Two semiconductor device 90a, 90b have the structure identical with device shown in Figure 8 90.IGBT unit 90ai among the first device 90a provides switching device, and when the IGBT short circuit among the second device 90b, detects the electric current I d that flows through the diode 90bd among the second device 90b.
Shown in Figure 10 B, when the IGBT 90ai among the first device 90a turn-offed, circulating current Iif flowed into the diode 90bd of the second device 90b.When the 90ai conducting of the IGBT unit of the first device 90a, reverse current flows into the diode 90bd of the second device 90b immediately.Have peak current with reverse current, it is defined as restoring current Irr with circulating current Iif direction counter current.Under situation about oppositely recovering, supply voltage is applied to diode, and the product of voltage and electric current is defined as the recovery loss.Usually, require rectifier diode under the situation of reversely restoring process, to have little restoring current Irr, little recovery loss, and under the situation of reversely restoring process, have the soft recovery of electric current.
In device shown in Figure 8 90, diode 90d is as FWD, and this FWD has the P conductive type layer 2 in IGBT unit 90i and the PN junction on the border between the substrate 1.Therefore, diode 90d forms with IGBT unit 90i.This diode 90d has the P conductive type layer 2 of high impurity concentration, and it is corresponding to the P conduction type part of this FWD.Therefore, when diode 90d carries out positive operation, introduce hole, make restoring current Irr under the situation of recovery operation, become big with high impurity concentration.Therefore, restorability step-down.
In order to improve the restorability of diode 90d, under the situation of single high speed diode, preferably to being optimized in the picture on surface in the diode, impurities concentration distribution or useful life.Yet,, therefore may make the mis-behave of IGBT unit 90i such as the structural change of above-mentioned optimization for what improve diode behavior because diode 90d forms with IGBT unit 90i.Therefore, be difficult to improve the performance of diode.
In order to improve the performance of diode under the situation that does not reduce IGBT unit 90i, JP-A-2005-101514 (corresponding to U.S. Patent Publication No.2005-0045960) discloses a kind of semiconductor device.
Figure 11 shows the semiconductor device 91 among the U.S. Patent Publication No.2005-0045960.
In device 91, the channel region of IGBT unit 91i is provided by P conductivity regions 2w, diffuses to form this P conductivity regions 2w by along continuous straight runs.The PN junction of diode 91d is formed between the Semiconductor substrate 1 and P conductivity regions 2w of N conduction type, and P conductivity regions 2w is along the horizontal direction expansion of substrate 1.Particularly, PN junction is arranged on the end of P conductivity regions 2w of along continuous straight runs and the border between the substrate 1.The end of the P conductivity regions 2w of along continuous straight runs has low relatively impurity concentration, makes the concentration that reduces the hole of introducing under the situation of the positive operation of diode 91d.Therefore, improved restorability.
Although the device among Fig. 8 90 comprises main P district 4, device 91 shown in Figure 11 does not comprise main P district 4.The surface impurity concentration that P conductivity regions 2w in the device 91 has is lower than the surface impurity concentration of the P conductivity regions 2 in the device 90.In this case, parasitic-PNP transistor has big base resistance, and this base resistance is provided by the clamping resistance (pinch resistance) of P conduction type raceway groove (that is P conductivity regions 2w).Here, parasitic-PNP transistor is made up of main N district 3, P conductivity regions 2w and substrate 1.Therefore, the current amplification factor of this parasitic NPN transistor becomes bigger.In this case, when high voltage surge is applied to device 91, and avalanche current is when flowing into P conductivity regions 2w, and this parasitic NPN transistor works easily, makes device 91 be damaged by high voltage surge.Therefore, although improved the restorability of diode 91d, puncture energy and diminish that to make that device 91 has a little surge withstand voltage.
Therefore, need a kind of semiconductor device in restorability with the performance that has enough IGBT unit under the withstand voltage situation of enough surges and enough diode.
Summary of the invention
In view of the above problems, a purpose of the present disclosure provides the semiconductor device of a kind of IGBT of having and diode.
According to first aspect of the present disclosure, semiconductor device comprises: the substrate with first side and second side; Be arranged on the IGBT in this substrate; And be arranged on diode in this substrate.This substrate comprises first conductivity regions of the ground floor with first conduction type, the second layer with second conduction type, first side, first conductivity regions of second side and second conductivity regions of second side.The second layer is arranged on first side of ground floor, and has the impurity concentration that is reduced to second side of the second layer from first side of the second layer.First conductivity regions of first side is arranged on first side of the second layer.First conductivity regions of second side and second conductivity regions of second side are arranged on second side of ground floor.Second conductivity regions of contiguous second side of first conductivity regions of second side.Substrate also comprises first groove, second groove, first electrode, second electrode and third electrode.First electrode embeds first groove by dielectric film.First groove passes first conductivity regions and the second layer of first side, and arrives ground floor.First electrode provides the grid of IGBT.Second electrode is arranged on first conductivity regions of first side, makes the first conductivity regions electric coupling of second electrode and first side.Second groove passes first conductivity regions of first side, and arrives the second layer.Second electrode is filled second groove, makes second electrode and second layer electric coupling.Second electrode provides the emitter of IGBT and the anode of diode.Third electrode is arranged on first conductivity regions of second side and second conductivity regions of second side, makes the second conductivity regions electric coupling of first conductivity regions and second side of the third electrode and second side.Third electrode provides the collector electrode of IGBT and the negative electrode of diode.
In above-mentioned device, the second layer provides the raceway groove of IGBT and the P current-carrying part of diode.This device have enough IGBT performances and enough surge withstand voltage.In addition, the second layer that is connected to the anode of diode has the impurity concentration that is reduced to the inside of the second layer from surface portion.Therefore, under the situation of positive operation, the concentration in the hole of introducing reduces, and makes that the restoring current under the reversely restoring process situation diminishes.Therefore, reduced the recovery loss in the device, thereby improved recovery characteristics.
According to second aspect of the present disclosure, semiconductor device comprises: the substrate with first side and second side; Be arranged on the IGBT in this substrate; And be arranged on diode in this substrate.This substrate comprises first conductivity regions of the ground floor with first conduction type, the second layer with second conduction type, first side, first conductivity regions of second side and second conductivity regions of second side.The second layer is arranged on first side of ground floor, and has the impurity concentration that is reduced to second side of the second layer from first side of the second layer.First conductivity regions of first side is arranged on first side of the second layer.First conductivity regions of second side and second conductivity regions of second side are arranged on second side of ground floor.Second conductivity regions of contiguous second side of first conductivity regions of second side.Substrate also comprises first groove, second groove, first electrode, second electrode and third electrode.First electrode embeds first groove by dielectric film.First groove passes first conductivity regions and the second layer of first side, and arrives ground floor.First electrode provides the grid of IGBT.Second electrode is arranged on first conductivity regions of first side, makes the first conductivity regions electric coupling of second electrode and first side.Second groove passes first conductivity regions of first side, and arrives the second layer.Second electrode is filled second groove, makes second electrode and second layer electric coupling.Second electrode provides the emitter of IGBT and the negative electrode of diode.Third electrode is arranged on first conductivity regions of second side and second conductivity regions of second side, makes the second conductivity regions electric coupling of first conductivity regions and second side of the third electrode and second side.Third electrode provides the collector electrode of IGBT and the anode of diode.
In above-mentioned device, the second layer provides the raceway groove of IGBT and the N current-carrying part of diode.This device have enough IGBT performances and enough surge withstand voltage.In addition, the second layer that is connected to the negative electrode of diode has the impurity concentration that is reduced to the inside of the second layer from surface portion.Therefore, under the situation of positive operation, the concentration in the hole of introducing reduces, and makes that restoring current diminishes under the reversely restoring process situation.Therefore, reduced the recovery loss in the device, thereby improved recovery characteristics.
Description of drawings
By following the specifying that the reference accompanying drawing carries out, it is more apparent that above and other objects of the present invention, feature and advantage will become.In the accompanying drawings:
Fig. 1 is the cross-sectional view that illustrates according to the semiconductor device of preferred embodiment of the present disclosure;
Fig. 2 A and 2B are the cross-sectional views that the semiconductor device that is used for emulation is shown;
Fig. 3 A is the cross-sectional view that another semiconductor device that is used for emulation is shown, and Fig. 3 B is the curve chart that the depth distribution of the impurity concentration in the device shown in Fig. 2 A and the 3A is shown;
Fig. 4 is the curve chart that the relation between the degree of depth of the restoring current of the diode in the device shown in Fig. 2 A-2B and the 3A and second groove is shown;
Fig. 5 illustrates the time of the diode in the device shown in Fig. 2 A and the 3A and the curve chart of the relation between the electric current;
Fig. 6 is the cross-sectional view that illustrates according to improved another semiconductor device of preferred embodiment of the present disclosure;
Fig. 7 is the cross-sectional view that illustrates according to another improved another semiconductor device of preferred embodiment of the present disclosure;
Fig. 8 is the cross-sectional view that illustrates according to the semiconductor device of the comparison of preferred embodiment of the present disclosure;
Fig. 9 is the circuit diagram that the equivalent electric circuit of device shown in Figure 8 is shown;
Figure 10 A is the circuit diagram that the test circuit of the current waveform that is used for detecting Fig. 9 device is shown, and Figure 10 B illustrates the time of the diode of device among Fig. 9 and the curve chart of the relation between the electric current; And
Figure 11 is the cross-sectional view that illustrates according to the semiconductor device of prior art.
Embodiment
(first embodiment)
Fig. 1 shows the semiconductor device 100 according to preferred embodiment.Device 100 comprises IGBT unit 100i and diode 100d, and they are formed in the same substrate 1.Device 100 comprises the N with first type surface and back side
-Conductive type semiconductor substrate 1.P conductive type layer 2a is formed on the first type surface of substrate 1, and the impurity concentration of this P conductivity regions 2a reduces to the inside part gradually from surface portion.N with main surface side of high impurity concentration
+Conductivity regions 3a (that is main N district) and P with main surface side of high impurity concentration
+Conductivity regions 4a (that is main P district) is formed on the surface portion of P conductivity regions 2a.Main P district 4a forms by diffusion method, makes main P district 4a not reach the PN junction between P conductivity regions 2a and the main N district 3a.This main P district 4a is arranged near the grid of IGBT unit 100i.
Back side P with high impurity concentration
+Conductivity regions 5 (that is back side P district) and have the back side N of high impurity concentration
+Conductivity regions 6 (that is back side N district) is formed on the surface portion of substrate 1 overleaf.Preferably, the contiguous main N district 3a of main P district 4a.In this case, compare away from the situation of main N district 3a setting with main P district 4a wherein, the layout of IGBT unit 100i and diode 100d has high layout density.Therefore, reduce the size of device 100, made device 100 minimize.
The first groove T1 is formed in the device 100.This first groove T1 passes main N district 3a and P conductive type layer 2a, and arrives substrate 1.In addition, the second groove T2 is formed in the device 100.This second groove T2 passes main P district 4a, and arrives the inside of P conductivity regions 2a.The second groove T2 also passes main N district 3a.In this case, IGBT unit 100i and diode 100d are arranged to have high layout density, make to compare device 100 minimums with the situation that the second groove T2 is formed on another position of not passing main N district 3a.
The second electrode lay 10 that aluminium etc. are made is formed on the first type surface of substrate 1 by barrier isolation film 9.The second electrode lay 10 also embeds the second groove T2.The second electrode lay 10 is by main N district 3a and main P district 4a and P conductivity regions 2a electric coupling.The second electrode lay 10 provides the emitter of IGBT unit 100i and the anode of diode 100d.The second electrode lay 10 is also connected to main N district 3a and main P district 4a, makes them by the second electrode lay 10 short circuits.Therefore, emitter among the IGBT unit 100i and channel electrical short circuit, and fixed the current potential of raceway groove.Therefore, stablized the operation of IGBT unit 100i.
In device 100, third electrode layer 11 is formed on the back side of substrate 1.This third electrode floor 11 is electrically connected P district, the back side 5 and back side N district 6, makes them by short circuit.Third electrode layer 11 provides the negative electrode of diode 100d and the collector electrode of IGBT unit 100i.
In device 100, P conductive type layer 2a is formed on the surface portion of the first type surface of substrate 1, and has the impurity concentration that reduces gradually to the inside of substrate 1 from surface portion.P conductive type layer 2a forms the channel shape stratification of IGBT unit 100i and the P conduction type part of diode 100d.The structure of IGBT unit 100i in the device 100 is the general structure of IGBT unit, makes this IGBT unit 100i have general characteristic.
In the device with the IGBT unit 100i that is formed on same substrate 1 and diode 100d, the Semiconductor substrate 1 of main N district 3a, P conductive type layer 2a and N conduction type provides parasitic NPN transistor.This parasitic NPN transistor have as the general structure of parasitic NPN transistor.Correspondingly, the surge of device 100 is withstand voltage is enough.
In device 90 as shown in Figure 8, be electrically connected to P conductive type layer 2 by the main P district 4 on the surface portion of substrate 1 as the second electrode lay 10 of the anode of diode 90d.Yet in device shown in Figure 1 100, the second electrode lay 10 that embeds the second groove T2 and arrive the inside of P conductive type layer 2a provides the anode of diode 100d, and the second electrode lay 10 is electrically connected to P conductive type layer 2a.The impurity concentration of the impurity concentration specific surface part that the inside of P conductive layer 2a has is low.Therefore, in device 100, reduced the hole concentration of under the situation of the positive operation of diode 100d, being introduced.Therefore, the restoring current Irr of diode 100d diminishes under the situation of reversely restoring process, and recovers loss and also reduce.Therefore, improved the restorability of diode 100d.
In addition, in device 100, main P district 4a is formed on the surface portion of P conductive type layer 2a, and the second groove T2 passes main P district 4a.In addition, the second electrode lay 10 is electrically connected to the main P district 4a on the sidewall of the second groove T2.Connection between the second electrode lay 10 and the main P district 4a provides ohmic contact.The impurity concentration of main P district 4a for example is equal to, or greater than 1 * 10
19Cm
-3, make main P district 4a and emitter have good ohmic contact.
In device 100, be connected to main P district 4a as the second electrode lay 10 of the emitter of IGBT unit 100i.Therefore, fix as the current potential of the cambial P conductive type layer of the raceway groove 2a of IGBT unit 100i with being stabilized.Particularly, the clamping resistance of P conductive type layer 2a reduces by forming main P district 4a.Therefore, avoid the operation of parasitic NPN transistor, made the withstand voltage improvement of surge.In addition, be connected to main P district 4a as the second electrode lay 10 of the anode of diode 100d at the sidewall of the second groove T2, and the second electrode lay 10 is connected to the inside of P conductive type layer 2a on the top of the second groove T2.Even when main P district 4a was formed in the device 100, the restorability of this diode 100d can not reduce yet therefore.
In addition, in device 100, the impurity concentration of P conductive type layer 2a reduces to inside from surface portion, and P conductive type layer 2a can form by oudin's technique, makes P conductive type layer 2a have single layer structure.Alternatively, P conductive type layer 2a can be formed by double-diffusion process, makes P conductive type layer 2a have double-decker, and it comprises high impurity concentration layer 2ah and low impurity concentration layer 2al.High impurity concentration layer 2ah is arranged on the face side of P conductive type layer 2a, and low impurity concentration layer 2al is arranged on the inside of P conductive type layer 2a.In Fig. 1, P conductive type layer 2a has high impurity concentration layer 2ah and low impurity concentration layer 2al.In this case, the second groove T2 arrives low impurity concentration layer 2al, makes the second electrode lay 10 be electrically connected to low impurity concentration layer 2al.
Because P conductive type layer 2a has double-decker, so the impurity concentration of the impurity concentration of high impurity concentration layer 2ah and low impurity concentration layer 2al is controlled separately.Therefore, can suitably determine the impurity concentration of high impurity concentration layer 2ah, the voltage that the threshold voltage of the channel region of feasible IGBT unit 100i is set to be scheduled to.In addition, can suitably determine the impurity concentration of low impurity concentration layer 2al, make the restoring current of diode 100d suitably reduce.Therefore, IGBT unit 100i in the device 100 and the interface between the diode 100d are reduced by the double-decker of P conductive type layer 2a.The characteristic of the characteristic of IGBT unit 100i and diode 1 00d can be controlled separately and easily.
Then, illustrate when device 100 is used for inverter circuit and diode 100d and be used for fly-wheel diode and (that is, flow into the simulation result of the electric current of diode 100d FWD) time.
Fig. 2 A shows two the different semiconductor device 101,102 that are used for emulation with 2B.Fig. 2 A and 2B show the equivalent concentration line of the impurity concentration of device 101 and 102 in each.Fig. 3 A shows another semiconductor device 103 that is used for emulation.Fig. 3 B shows the depth distribution of impurity concentration in the device 101 and 103 that intercepts along the line IIIA-IIIA of the line IIA-IIA of Fig. 2 A and Fig. 3 A.
Compare with device 100, device 101 has simple structure, and P conductive type layer 2a has single layer structure and do not form main P district 4a around the second groove T2.The second electrode lay 10 among the P conductive type layer 2a and the second groove T2 is electrically connected to each other with the ohmic contact on the whole contact area therebetween.In addition, the second electrode lay 10 among the main N district 3a and the second groove T2 also is electrically connected to each other with the ohmic contact on the whole contact area therebetween.
In device 102, P conductive type layer 2a has the double-decker that comprises low impurity concentration layer 2al and high impurity concentration layer 2ah.In addition, main P district 4a also is formed on the top of the second groove T2.The second electrode lay 10 among the low impurity concentration layer 2al of P conductive type layer 2a and high impurity concentration layer 2ah and the second groove T2 is electrically connected to each other with the ohmic contact on the whole contact area therebetween.In addition, the second electrode lay 10 among the main N district 3a and the second groove T2 also is electrically connected to each other with the ohmic contact on the whole contact area therebetween.
Fig. 4 shows the relation between the restoring current Irr of the gash depth of the second groove T2 in each device 101,102,103 and diode, and this is obtained by simulation result.Fig. 5 shows the current waveform of the diode in each device 101,103, and this is obtained by simulation result.In Fig. 5, the restoring current Irr with device 101 of single diffused channel structure is 253 amperes, and this is obtained by simulation result, and the restoring current Irr with device 103 of double diffusion channel structure is 180 amperes, and this is obtained by simulation result.
In Fig. 4, wherein the degree of depth that has of the second groove T2 is 0, and promptly device 101,102 does not have the situation of the second groove T2 corresponding to device shown in Figure 8 90.In this case, restoring current is 380 amperes.
At the single layer structure with P conductive type layer 2a with have in the device 101 of wherein the P conductive type layer 2a on whole contact area and the ohmic contact between the second electrode lay 10, when the degree of depth of the second groove T2 became darker, restoring current Irr reduced.For example, when the degree of depth of the second groove T2 was 1.7 μ m, restoring current Irr was 240 amperes, and this is more much smaller than device 90.
In the device 102 of double-decker with P conductive type layer 2a and the main P district 4a with the top that is formed on the second groove T2, when the degree of depth of the second groove T2 became darker, restoring current Irr also reduced.Here, the reduced rate of the restoring current in the device 102 is littler than the reduced rate of device 101.For example, when the degree of depth of the second groove T2 was 1.7 μ m, restoring current Irr was 330 amperes, and this is littler than device 90.
The double-decker with P conductive type layer 2a with have Schottky contacts with the second groove T2 top and contact in the device 103 of the second electrode lay 10 among the second groove T2 of low impurity concentration layer 2al, it is maximum that the reduction of restoring current Irr becomes.For example, when the degree of depth of the second groove T2 was 1.7 μ m, restoring current Irr was 180 amperes, and this is more much smaller than device 90.
Therefore, it is preferably lower so that reduce the restoring current of diode to be connected to the impurity concentration of P conductive type layer 2a of the second electrode lay 10 on the top of the second groove T2.
Preferably, P conductive type layer 2a and the electrical connection between the second electrode lay 10 on the top of groove T2 are Schottky contacts.Usually, Schottky contacts provides rectification function, makes electric current when diode when mobile, only carry out electron stream along direction.Therefore, reduced the hole of being introduced by the ohmic contact part.Therefore, Schottky contacts has been eliminated the hole under the recovery process situation.As a result, improved recovery characteristics.Therefore, the second electrode lay 10 and provide Schottky contacts with rectified action as the electrical connection between the P conductive type layer 2a on the top of the second groove T2 of the major part of the anode in the diode.Therefore, the restoring current under the reversely restoring process situation becomes littler by the situation that ohmic contact provides than whole connection.Therefore, reduce the recovery loss, and improved recovery characteristics.
Fig. 6 shows improved another semiconductor device 104 according to preferred embodiment.
Fig. 7 shows another improved another semiconductor device according to preferred embodiment.Device 105 comprises IGBT unit 105i and the diode 105d that is formed on substrate 1.In addition, device 105 comprises the P district, the back side 5 that is formed in the substrate 1 and the back side N conductive type layer 1a in the back side N district 6, makes back side N floor 1a cover P district, the back side 5 and back side N district 6.
In device 105, the P conductivity regions 2b of second main surface side is formed on the first type surface part of substrate 1, and the main surface portion branch of this substrate 1 is arranged on the zone that does not also have P conductivity regions 2a except diode 105d.The second electrode lay 10 not only is electrically connected to P conductivity regions 2a but also is electrically connected to the P conductivity regions 2b of second main surface side.Therefore, device 105 also comprises the second diode 105d2, and its P conductivity regions 2b by second main surface side, substrate 1 and back side N district 6 provide.In the second diode 105d2, the second electrode lay 10 provides anode, and third electrode layer 11 provides negative electrode.The second diode 105d2 adjacent diodes unit 105d, this diode 105d is first diode.
In Fig. 1 and each device 100,104 shown in Figure 6, diode 100d, 104d are formed by the Semiconductor substrate 1 of P conductive type layer 2a and N conduction type and the N conductivity regions 6 at the back side.This diode 100d, 104d provide the body diode unit.Although improved the recovery characteristics of body diode unit 100d, 104d, but compare with the diode 90d near the device 90 that does not have the second groove T2 and anode 10 to be connected the surface portion of substrate 1, the current-carrying capacity of this diode 100d, 104d diminishes.
In device shown in Figure 7 105, the second diode 105d2 is formed on the part of the substrate 1 except that the part of the substrate 1 that forms the first diode 105d on it.This second diode 105d2 provide enough current-carrying capacities.In the second diode 105d2, anode 10 is electrically connected to the P conductivity regions 2b of second main surface side.Yet the P conductivity regions 2b of second main surface side can form away from IGBT unit 105i, and in addition, the impurity concentration of the P conductivity regions 2b of second main surface side can suitably be controlled.Therefore, improved recovery characteristics.
In device 105, back side P district 5 is formed on the below of P conductive type layer 2a, and back side N district 6 is formed on the below of the P conductivity regions 2b of second main surface side.Therefore, reduced by the diode behavior of the first diode 105d, make the diode 105d that wins together with IGBT unit 105i mainly as IGBT, and the second diode 105d2 is with the diode of deciding.Therefore, because IGBT funtion part (that is the IGBT unit 105i that, has diode 105d) and diode funtion part (that is the second diode 105d2) are separated from each other clearly, therefore increase the design freedom of device 105, and be easy to the design of performer 105.
In each the device 100-105 shown in Fig. 1-7, P conductive type layer 2a is formed on the Semiconductor substrate 1 of N conduction type, and forms the IGBT unit 100i-105i of N raceway groove and with the diode 100d-105d of P conductive type layer 2a as anode.Alternatively, the N conductive type layer can be formed on the Semiconductor substrate of P conduction type, and can form the IGBT unit of P raceway groove and with the diode of N conductive type layer as negative electrode.In this case, this device has enough IGBT performances, enough restorability and enough surge withstand voltage propertiess.
Above-mentioned device 100-105 is suitable for inverter circuit, and first and second diodes are suitable for use as FWD.
Above-mentioned openly have a following aspect.
According to first aspect of the present disclosure: semiconductor device comprises: the substrate with first side and second side; Be arranged on the IGBT in the substrate; And be arranged on diode in the substrate.This substrate comprises first conductivity regions of the ground floor with first conduction type, the second layer with second conduction type, first side, first conductivity regions of second side and second conductivity regions of second side.The second layer is arranged on first side of ground floor, and has the impurity concentration that is reduced to second side of the second layer from first side of the second layer.First conductivity regions of first side is arranged on first side of the second layer.First conductivity regions of second side and second conductivity regions of second side are arranged on second side of ground floor.Second conductivity regions of contiguous second side of first conductivity regions of second side.Substrate also comprises first groove, second groove, first electrode, second electrode and third electrode.First electrode embeds first groove by dielectric film.First groove passes first conductivity regions and the second layer of first side, and arrives ground floor.First electrode provides the grid of IGBT.Second electrode is arranged on first conductivity regions of first side, makes the first conductivity regions electric coupling of second electrode and first side.Second groove passes first conductivity regions of first side, and arrives the second layer.Second electrode is filled second groove, makes second electrode and second layer electric coupling.Second electrode provides the emitter of IGBT and the anode of diode.Third electrode is arranged on first conductivity regions of second side and second conductivity regions of second side, makes the second conductivity regions electric coupling of first conductivity regions and second side of the third electrode and second side.Third electrode provides the collector electrode of IGBT and the negative electrode of diode.
In above-mentioned device, the second layer provides the raceway groove of IGBT and the P current-carrying part of diode.This device have enough IGBT performances and enough surge withstand voltage.In addition, the second layer that is connected to the anode of diode has the impurity concentration that is reduced to the inside of the second layer from surface portion.Therefore, under the situation of positive operation, the concentration in the hole of introducing reduces, and makes that the restoring current under the situation of reversely restoring process diminishes.Therefore, reduced the recovery loss in the device, thereby improved recovery characteristics.
Alternatively, substrate can also comprise second conductivity regions of first side, it is arranged between first conductivity regions of the second layer and first side, and second groove passes second conductivity regions of first side, makes second electrode in second groove and the second conductivity regions electric coupling of first side.In addition, second electrode can be with second conductivity regions coupling of the ohmic contact and first side.Alternatively, second conductivity regions of first side can contact first conductivity regions of first side.In above-mentioned situation, fix as the current potential of the second layer of the raceway groove of IGBT with being stabilized, make the clamping resistance of the second layer reduce.Therefore, avoided the parasitic NPN transistor operation, thereby it is withstand voltage to improve surge.In addition, this device has the recovery characteristics of enough diodes, and this is owing to be connected to second conductivity regions of first side as second electrode of the anode of diode at the sidewall of second groove, and is connected to the inside of the second layer on the top of second groove.
Alternatively, second electrode can be with Schottky contacts and second layer electric coupling.Schottky contacts has rectification function, and making provides Schottky contacts to reduce the hole of introducing from ohmic contact regions.Therefore, improved the recovery characteristics of diode.
Alternatively, the second layer can comprise high impurity concentration layer and low impurity concentration layer.The high impurity concentration layer is arranged on first side of the second layer, and the low impurity concentration layer is arranged on second side of the second layer.Second groove passes the high impurity concentration layer, and arrives the low impurity concentration layer.Second electrode and the electric coupling of low impurity concentration layer.In this case, suitably determine the impurity concentration of high impurity concentration layer, and determine that suitably the impurity concentration of low impurity concentration layer is so that reduce the restoring current of diode so that set the threshold voltage of the raceway groove among the IGBT.Therefore, the Characteristics Control of IGBT and diode also can be carried out separately easily.
Alternatively, device can also comprise: be arranged on second diode in the substrate.The contiguous described diode of this second diode.In second diode, first conductivity regions of second electrode, ground floor, second side and third electrode are with this sequential cascade.Ground floor in second diode also comprises the second conduction type part, and it is arranged on the surface portion of first side of ground floor.Second electrode and this second conduction type part electric coupling.Second electrode provides the anode of second diode.Third electrode provides the negative electrode of second diode.In this case, second diode provides enough current-carrying capacities.
Alternatively, first conductivity regions of second side can be arranged in the diode, and second conductivity regions of second side can be arranged among the IGBT.Alternatively, first conductivity regions of second side can be arranged in second diode, and second conductivity regions of second side can be arranged in IGBT and the diode.
Alternatively, first conductivity regions of second side can be arranged on the below of second conduction type part, and second conductivity regions of second side can be arranged on the below of the second layer.In this case, improved the design freedom of device.
Alternatively, substrate can also comprise the 3rd layer with first conduction type.Between the 3rd layer of first conductivity regions that is arranged on the ground floor and second side and between second conductivity regions of the ground floor and second side.The 3rd layer covers first conductivity regions of second side and second conductivity regions of second side.Impurity concentration between the impurity concentration of the 3rd layer of first conductivity regions with the impurity concentration that is arranged on ground floor and second side.
Alternatively, this IGBT and diode can provide inverter circuit, and this diode provides fly-wheel diode.
Alternatively, this IGBT, diode and second diode can provide inverter circuit, and this diode provides fly-wheel diode, and this second diode provides second fly-wheel diode.
According to second aspect of the present disclosure, semiconductor device comprises: the substrate with first side and second side; Be arranged on the IGBT in the substrate; And be arranged on diode in the substrate.This substrate comprises first conductivity regions of the ground floor with first conduction type, the second layer with second conduction type, first side, first conductivity regions of second side and second conductivity regions of second side.The second layer is arranged on first side of ground floor, and has the impurity concentration that is reduced to second side of the second layer from first side of the second layer.First conductivity regions of first side is arranged on first side of the second layer.First conductivity regions of second side and second conductivity regions of second side are arranged on second side of ground floor.Second conductivity regions of contiguous second side of first conductivity regions of second side.Substrate also comprises first groove, second groove, first electrode, second electrode and third electrode.First electrode embeds first groove by dielectric film.First groove passes first conductivity regions and the second layer of first side, and arrives ground floor.First electrode provides the grid of IGBT.Second electrode is arranged on first conductivity regions of first side, makes the first conductivity regions electric coupling of second electrode and first side.Second groove passes first conductivity regions of first side, and arrives the second layer.Second electrode is filled second groove, makes second electrode and second layer electric coupling.Second electrode provides the emitter of IGBT and the negative electrode of diode.Third electrode is arranged on first conductivity regions of second side and second conductivity regions of second side, makes the second conductivity regions electric coupling of first conductivity regions and second side of the third electrode and second side.Third electrode provides the collector electrode of IGBT and the anode of diode.
In above-mentioned device, the second layer provides the raceway groove of IGBT and the N current-carrying part of diode.This device have enough IGBT performances and enough surge withstand voltage.In addition, the second layer that is connected to the negative electrode of diode has the impurity concentration that is reduced to the inside of the second layer from surface portion.Therefore, under the situation of positive operation, the concentration in the hole of introducing reduces, and makes that the restoring current under the situation of reversely restoring process diminishes.Therefore, reduced the recovery loss in the device, thereby improved recovery characteristics.
Although the present invention has been described, should be appreciated that the present invention is not limited to preferred embodiment and structure with reference to its preferred embodiment.The present invention is intended to comprise various improvement and equivalent arrangements.In addition, although preferred various combination and structure are arranged, comprise other combination more, a still less or only element and structure also within the spirit and scope of the present invention.
Claims (26)
1, a kind of semiconductor device comprises:
Substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) with first side and second side;
Be arranged on the IGBT (100i, 104i, 105i) in the described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2); And
Be arranged on the diode (100d, 104d, 105d) in the described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2), wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) comprises first conductivity regions (3a) of the ground floor (1) with first conduction type, the second layer (2a) with second conduction type, first side, first conductivity regions (6) of second side and second conductivity regions (5) of second side
The described second layer (2a) is arranged on first side of described ground floor (1), and has the impurity concentration that is reduced to second side of the described second layer (2a) from first side of the described second layer (2a),
First conductivity regions (3a) of described first side is arranged on first side of the described second layer (2a),
First conductivity regions (6) of described second side and second conductivity regions (5) of described second side are arranged on second side of described ground floor (1),
Second conductivity regions (5) of contiguous described second side of first conductivity regions (6) of described second side,
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises first groove (T1), second groove (T2), first electrode (8), second electrode (10) and third electrode (11),
Described first electrode (8) embeds in described first groove (T1) by dielectric film (7),
Described first groove (T1) passes first conductivity regions (3a) and the described second layer (2a) of described first side, and arrives described ground floor (1),
Described first electrode (8) provides described IGBT the grid of (100i, 104i, 105i),
Described second electrode (10) is arranged on first conductivity regions (3a) of described first side, makes first conductivity regions (3a) electric coupling of described second electrode (10) and described first side,
Described second groove (T2) passes first conductivity regions (3a) of described first side, and arrives the described second layer (2a),
Described second electrode (10) is filled described second groove (T2), makes described second electrode (10) and the described second layer (2a) electric coupling,
Described second electrode (10) provides the emitter of described IGBT (100i, 104i, 105i) and the anode of described diode (100d, 104d, 105d),
Described third electrode (11) is arranged on first conductivity regions (6) of described second side and second conductivity regions (5) of described second side, make first conductivity regions (6) of described third electrode (11) and described second side and second conductivity regions (5) electric coupling of described second side, and
Described third electrode (11) provides the collector electrode of described IGBT (100i, 104i, 105i) and the negative electrode of described diode (100d, 104d, 105d).
2, device according to claim 1, wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises second conductivity regions (4a) of first side, and it is arranged between first conductivity regions (3a) of the described second layer (2a) and described first side, and
Described second groove (T2) passes second conductivity regions (4a) of described first side, makes second conductivity regions (4a) electric coupling of described second electrode (10) and described first side in described second groove (T2).
3, device according to claim 2, wherein
Described second electrode (10) is with second conductivity regions (4a) coupling of ohmic contact and described first side.
4, device according to claim 2, wherein
First conductivity regions (3a) of described first side of second conductivity regions (4a) contact of described first side.
5, device according to claim 1, wherein
Described second electrode (10) is with Schottky contacts and the described second layer (2a) coupling.
6, device according to claim 1, wherein
The described second layer (2a) comprises high impurity concentration layer (2ah) and low impurity concentration layer (2al),
Described high impurity concentration layer (2ah) is arranged on first side of the described second layer (2a), and described low impurity concentration layer (2al) is arranged on second side of the described second layer (2a),
Described second groove (T2) passes described high impurity concentration layer (2ah), and arrives described low impurity concentration layer (2al), and
Described second electrode (10) and described low impurity concentration layer (2al) electric coupling.
7, according to any described device among the claim 1-6, also comprise:
Be arranged on second diode (105d2) in the described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2), wherein
The contiguous described diode (105d) of described second diode (105d2),
In described second diode (105d2), first conductivity regions (6) of described second electrode (10), described ground floor (1), described second side and described third electrode (11) be with this sequential cascade,
Ground floor (1) in described second diode (105d2) also comprises second conduction type part (2b), and it is arranged in the surface portion of first side of described ground floor (1),
Described second electrode (10) and (2b) electric coupling of described second conduction type part,
Described second electrode (10) provides the anode of described second diode (105d2), and
Described third electrode (11) provides the negative electrode of described second diode (105d2).
8, according to any described device among the claim 1-6, wherein
First conductivity regions (6) of described second side is arranged in the described diode (100d, 104d), and
Second conductivity regions (5) of described second side is arranged among the described IGBT (100i, 104i).
9, device according to claim 7, wherein
First conductivity regions (6) of described second side is arranged in described second diode (105d2), and
Second conductivity regions (5) of described second side is arranged in described IGBT (105i) and the described diode (105d).
10, device according to claim 7, wherein
First conductivity regions (6) of described second side is arranged on the below of described second conduction type part (2b), and
Second conductivity regions (5) of described second side is arranged on the below of the described second layer (2a).
11, according to any described device among the claim 1-6, wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises the 3rd layer (1a) with described first conduction type,
Described the 3rd layer (1a) is arranged between first conductivity regions (6) of described ground floor (1) and described second side and between second conductivity regions (5) of described ground floor (1) and described second side,
Described the 3rd layer (1a) covers first conductivity regions (6) of described second side and second conductivity regions (5) of described second side, and
Described the 3rd layer (1a) has the impurity concentration between the impurity concentration of first conductivity regions (6) of the impurity concentration that is arranged on described ground floor (1) and described second side.
12, according to any described device among the claim 1-6, wherein
Described IGBT (100i, 104i) and described diode (100d, 104d) provide inverter circuit, and
Described diode (100d, 104d) provides fly-wheel diode (100d, 104d).
13, device according to claim 7, wherein
Described IGBT (105i), diode (105d) and described second diode (105d2) provide inverter circuit,
Described diode (105d) provides fly-wheel diode (105d), and
Described second diode (105d2) provides second fly-wheel diode (105d2).
14, a kind of semiconductor device comprises:
Substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) with first side and second side;
Be arranged on the IGBT (100i, 104i, 105i) in the described substrate (1,1 a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2); And
Be arranged on the diode (100d, 104d, 105d) in the described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2), wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) comprises first conductivity regions (3a) of the ground floor (1) with first conduction type, the second layer (2a) with second conduction type, first side, first conductivity regions (6) of second side and second conductivity regions (5) of second side
The described second layer (2a) is arranged on first side of described ground floor (1), and has the impurity concentration that is reduced to second side of the described second layer (2a) from first side of the described second layer (2a),
First conductivity regions (3a) of described first side is arranged on first side of the described second layer (2a),
First conductivity regions (6) of described second side and second conductivity regions (5) of described second side are arranged on second side of described ground floor (1),
Second conductivity regions (5) of contiguous described second side of first conductivity regions (6) of described second side,
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises first groove (T1), second groove (T2), first electrode (8), second electrode (10) and third electrode (11),
Described first electrode (8) embeds in described first groove (T1) by dielectric film (7),
Described first groove (T1) passes first conductivity regions (3a) and the described second layer (2a) of described first side, and arrives described ground floor (1),
Described first electrode (8) provides described IGBT the grid of (100i, 104i, 105i),
Described second electrode (10) is arranged on first conductivity regions (3a) of described first side, makes first conductivity regions (3a) electric coupling of described second electrode (10) and described first side,
Described second groove (T2) passes first conductivity regions (3a) of described first side, and arrives the described second layer (2a),
Described second electrode (10) is filled described second groove (T2), makes described second electrode (10) and the described second layer (2a) electric coupling,
Described second electrode (10) provides the emitter of described IGBT (100i, 104i, 105i) and the negative electrode of described diode (100d, 104d, 105d),
Described third electrode (11) is arranged on second conductivity regions (5) of first conductivity regions (6) of described second side and described second side, make first conductivity regions (6) of described third electrode (11) and described second side and second conductivity regions (5) electric coupling of described second side, and
Described third electrode (11) provides the collector electrode of described IGBT (100i, 104i, 105i) and the anode of described diode (100d, 104d, 105d).
15, device according to claim 14, wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises second conductivity regions (4a) of first side, and it is arranged between first conductivity regions (3a) of the described second layer (2a) and described first side, and
Described second groove (T2) passes second conductivity regions (4a) of described first side, makes second conductivity regions (4a) electric coupling of described second electrode (10) and described first side in described second groove (T2).
16, device according to claim 15, wherein
Described second electrode (10) is with second conductivity regions (4a) coupling of ohmic contact and described first side.
17, device according to claim 15, wherein
First conductivity regions (3a) of described first side of second conductivity regions (4a) contact of described first side.
18, device according to claim 14, wherein
Described second electrode (10) is with Schottky contacts and the described second layer (2a) coupling.
19, device according to claim 14, wherein
The described second layer (2a) comprises high impurity concentration layer (2ah) and low impurity concentration layer (2al),
Described high impurity concentration layer (2ah) is arranged on first side of the described second layer (2a), and described low impurity concentration layer (2al) is arranged on second side of the described second layer (2a),
Described second groove (T2) passes described high impurity concentration layer (2ah), and arrives described low impurity concentration layer (2al), and
Described second electrode (10) and described low impurity concentration layer (2al) electric coupling.
20, according to any described device among the claim 14-19, also comprise:
Be arranged on second diode (105d2) in the described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2), wherein
The contiguous described diode (105d) of described second diode (105d2),
In described second diode (105d2), first conductivity regions (6) of described second electrode (10), described ground floor (1), described second side and described third electrode (11) be with this sequential cascade,
Ground floor (1) in described second diode (105d2) also comprises second conduction type part (2b), and it is arranged in the surface portion of first side of described ground floor (1),
Described second electrode (10) and (2b) electric coupling of described second conduction type part,
Described second electrode (10) provides the negative electrode of described second diode (105d2), and
Described third electrode (11) provides the anode of described second diode (105d2).
21, according to any described device among the claim 14-19, wherein
First conductivity regions (6) of described second side is arranged in the described diode (100d, 104d), and
Second conductivity regions (5) of described second side is arranged among the described IGBT (100i, 104i).
22, device according to claim 20, wherein
First conductivity regions (6) of described second side is arranged in described second diode (105d2), and
Second conductivity regions (5) of described second side is arranged in described IGBT (105i) and the described diode (105d).
23, device according to claim 20, wherein
First conductivity regions (6) of described second side is arranged on the below of described second conduction type part (2b), and
Second conductivity regions (5) of described second side is arranged on the below of the described second layer (2a).
24, according to any described device among the claim 14-19, wherein
Described substrate (1,1a, 2a, 2b, 3a, 4a, 5,6,8,10,11, T1, T2) also comprises the 3rd layer (1a) with described first conduction type,
Described the 3rd layer (1a) is arranged between first conductivity regions (6) of described ground floor (1) and described second side and between second conductivity regions (5) of described ground floor (1) and described second side,
Described the 3rd layer (1a) covers first conductivity regions (6) of described second side and second conductivity regions (5) of described second side, and
Described the 3rd layer (1a) has the impurity concentration between the impurity concentration of first conductivity regions (6) of the impurity concentration that is arranged on described ground floor (1) and described second side.
25, according to any described device among the claim 14-19, wherein
Described IGBT (100i, 104i) and described diode (100d, 104d) provide inverter circuit, and
Described diode (100d, 104d) provides fly-wheel diode (100d, 104d).
26, device according to claim 20, wherein
Described IGBT (105i), described diode (105d) and described second diode (105d2) provide inverter circuit,
Described diode (105d) provides fly-wheel diode (105d), and
Described second diode (105d2) provides second fly-wheel diode.
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| CN102376709A (en) * | 2010-08-17 | 2012-03-14 | 株式会社电装 | Semiconductor device |
| CN101728386B (en) * | 2008-10-14 | 2012-10-03 | 株式会社电装 | Semiconductor device having IGBT and FWD on same substrate |
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| CN102376709B (en) * | 2010-08-17 | 2015-04-01 | 株式会社电装 | Semiconductor device |
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| CN102931223A (en) * | 2012-11-28 | 2013-02-13 | 江苏物联网研究发展中心 | IGBT (Insulated Gate Bipolar Translator) collection electrode structure |
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| CN108780809B (en) * | 2016-09-14 | 2021-08-31 | 富士电机株式会社 | RC-IGBT and manufacturing method thereof |
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