CN109979884A - Power die composite packing structure and its packaging method - Google Patents
Power die composite packing structure and its packaging method Download PDFInfo
- Publication number
- CN109979884A CN109979884A CN201711459242.7A CN201711459242A CN109979884A CN 109979884 A CN109979884 A CN 109979884A CN 201711459242 A CN201711459242 A CN 201711459242A CN 109979884 A CN109979884 A CN 109979884A
- Authority
- CN
- China
- Prior art keywords
- power die
- conductive part
- conductive
- conductive path
- base unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 42
- 238000012856 packing Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 239000013078 crystal Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000006071 cream Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000000084 colloidal system Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000010412 perfusion Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
The invention discloses a kind of power die composite packing structure and its packaging method, power die composite packing structure includes power die and base unit.Power die includes first surface and the first conductive part, and the first conducting position is in first surface.Base unit is for setting power die and includes ontology, groove and at least one conductive path, and ontology has third surface, and groove is recessed in ontology and for accommodating power die；Groove includes opening, slot side and groove bottom, and opening is surrounded by third surface, and slot side one end connects third surface, the other end of groove bottom link slot side, and groove bottom and the angle of slot side are greater than or equal to 90 degree.Conductive path is set to ontology and extends from groove bottom along slot side toward third surface；First conductive part and conductive path are electrically connected.The electrical property of the first conductive part can be allowed to extend to body surface by conductive path whereby.
Description
Technical field
The invention relates to a kind of power die encapsulating structure and its packaging methods, and especially cover in relation to a kind of use
The power die composite packing structure and its packaging method of brilliant packaged type.
Background technique
Well known power die encapsulating structure includes plastic casing, multiple pins and power die, and power die setting exists
It inside plastic casing, is electrically connected by routing mode and pin, pin exposes to plastic casing to connect with application circuit again
It connects.
However, the stability of such packaged type is insufficient, and when power die is powerful chip, it is easy using
A large amount of heat, the poor heat radiation of plastic casing are issued in the process, and then leads to the reduced lifetime of power die, although at present
It can be on plastic casing plus radiating fin, but its heat dissipation effect is still limited.
In view of this, how effectively to increase the stability of power die encapsulating structure, preferably increase its heat dissipation effect,
Then the target made great efforts at related dealer.
Summary of the invention
A purpose of the present invention is that providing a kind of power die composite packing structure and its packaging method, sealed by flip
The configuration of assembling structure and conductive path can effectively increase electrical stability, and make power die composite packing structure
More convenient for the installation of subsequent conditioning circuit.
A kind of power die composite packing structure of the offer of a mesh according to the present invention, it includes power die and bottoms
Seat unit.Power die includes first surface and the first conductive part, and the first conducting position is in first surface.Base unit is for setting
Power die and include ontology, groove and at least one conductive path, ontology have a third surface, and groove is recessed in ontology and confession
Accommodate power die；Groove includes opening, slot side and groove bottom, and opening is surrounded by third surface, slot side one end connection the
The angle of three surfaces, the other end of groove bottom link slot side, groove bottom and slot side is greater than or equal to 90 degree.Conductive path is set
It is placed in ontology and extends from groove bottom along slot side toward third surface；Wherein first surface is towards groove bottom, and the first conductive part
It is electrically connected with conductive path.
Whereby, the first conductive part of power die can electrically be extended to base unit by the conductive path on base unit
Any surface of ontology, and can not need to carry out routing connection as traditional packaged type, there is electrically stable be not easy
The advantages of damage, and be conducive to the installation of subsequent applications circuit.
According to power die composite packing structure above-mentioned, wherein power die can be also conductive comprising second surface and second
Portion, second surface is in contrast to first surface, and the second conductive part is set to two surfaces.Or power die chip package knot above-mentioned
Structure can also comprising cover plate lid be set to ontology, cover board include the 5th surface and the 5th conductive part, the 5th surface towards second surface, if
It is placed in the 5th surface and is electrically connected with the second conductive part.Or cover board also includes the 6th surface, the 6th conductive part and conductive path,
In contrast to the 5th surface, the 6th conductive part is set to the 6th surface on 6th surface, conductive path be electrically connected the 5th conductive part and
6th conductive part.Or in which slot side also includes rank portion, base unit also includes conductive path, and conductive path is extended to from rank portion
Third surface, and conductive path and the 5th conductive part are electrically connected.
According to power die composite packing structure above-mentioned, base unit can be also set to comprising radiating fin.Or pedestal
Unit can also include metal layer, and ontology can be also comprising the 4th surface in contrast to third surface, and wherein metal layer is set to the 4th table
Face and for radiating fin be arranged.Or ontology is made of ceramic material.
A kind of power die composite packing structure that another object according to the present invention provides, comprises the steps of offer
Base unit provides the pre- manufacturing of conductive layer, provides chip setting operation and provides waterproof insulation operation.Base unit includes
Ontology and the recessed groove in ontology, ontology have third face table, and groove includes groove bottom and slot side.The pre- manufacturing of conductive layer
It is to make conductive path in base unit, conductive path extends along slot side toward third surface from groove bottom.Operation is arranged in chip
It is to provide power die and die bond operation is provided；Power die is set to groove, power die includes first surface and setting
In the first conductive part of first surface, it is fixed on power die in groove and the first conductive part is made to be electrically connected conductive path；
Waterproof insulation operation is sealing power die and groove.
According to power die crystal coated encapsulation method above-mentioned, wherein cover board setting pedestal list can first be provided in sealing operation
Member reuses colloid perfusion bonding cover board in base unit, to seal power die and groove.Power die flip envelope above-mentioned
Dress method can include also fin installation exercise, and radiating fin is locked in base unit.
According to power die crystal coated encapsulation method above-mentioned, wherein the groove bottom of base unit can be greater than with slot side angle
Or it is equal to 90 degree, and in the pre- manufacturing of conductive layer, it printing or electroplating technology can be used to form conductive path.Or in die bond operation
Elargol or tin cream can be respectively set on the first conductive part and conductive path, and heating makes the first conductive part be electrically connected conductive path.
Or multiple gold goals can be set in die bond operation on the first conductive part, and be arranged elargol or tin cream in conductive path, heating makes the
One conductive part is electrically connected conductive path.
Power die composite packing structure of the invention and its packaging method compared with prior art, have and are sealed by flip
The configuration of assembling structure and conductive path can effectively increase electrical stability, and make power die composite packing structure more
It is convenient to the beneficial effect of subsequent conditioning circuit installation.
Detailed description of the invention
Fig. 1 is painted a kind of perspective view of power die composite packing structure according to an embodiment of the present invention；
Fig. 2 is painted the perspective exploded view of the power die composite packing structure of Fig. 1；
The section view that Fig. 3 is painted the power die composite packing structure of Fig. 1 is intended to；
Another section view that Fig. 4 is painted the power die composite packing structure of Fig. 1 is intended to；
Another section view that Fig. 5 is painted the power die composite packing structure of Fig. 1 is intended to；
Fig. 6 is painted to be intended to according to a kind of section view of power die composite packing structure of another embodiment of the present invention；
Fig. 7 is painted to be intended to according to a kind of section view of power die composite packing structure of a further embodiment of the present invention；
Fig. 8 is painted a kind of step flow chart of power die crystal coated encapsulation method according to a further embodiment of this invention；
And
Fig. 9 is painted the sub-step flow chart of a step of Fig. 8.
Specific embodiment
The following drawings illustrate embodiments of the present invention.As clearly stated, the details in many practices will
It is explained in the following description.However, reader is not it will be understood that the details in these practices is applied to limit the present invention.
That is, details in these practices is non-essential in some embodiments of the present invention.In addition, being risen to simplify attached drawing
See, some known usual structures will be painted in a manner of simply illustrating in the accompanying drawings with element；And duplicate element can
Energy use is identically numbered expression.
Fig. 1, Fig. 2, Fig. 3, Fig. 4 and Fig. 5 are please referred to, Fig. 1 is painted a kind of power die according to an embodiment of the present invention
The perspective view of composite packing structure 100, Fig. 2 are painted the perspective exploded view of the power die composite packing structure 100 of Fig. 1,
The section view that Fig. 3 is painted the power die composite packing structure 100 of Fig. 1 is intended to, and Fig. 4 is painted the power die flip envelope of Fig. 1
Another section of assembling structure 100, which regards, to be intended to, and Fig. 5 is painted another section view meaning of the power die composite packing structure 100 of Fig. 1
Figure.Power die composite packing structure 100 includes power die 200 and base unit 300.
Power die 200 includes first surface 210 and the first conductive part 230, and the first conductive part 230 is located at first surface
210.Base unit 300 is for setting power die 200 and includes ontology 320, groove 310 and at least one conductive path 330, sheet
Body 320 has third surface 321, and groove 310 is recessed in ontology 320 and for accommodating power die 200；Groove 310 include opening,
Slot side 312 and groove bottom 311, opening are surrounded by third surface 321, and 312 one end of slot side connects third surface 321, slot bottom
The angle theta 1 of the other end of 311 link slot side 312 of face, groove bottom 311 and slot side 312 is greater than or equal to 90 degree.Conductive path
Diameter 330 extends along slot side 312 toward third surface 321 from groove bottom 311；Wherein first surface 210 is towards groove bottom 311, and
First conductive part 230 is electrically connected with conductive path 330.
It whereby, can be by the first conductive part 230 of power die 200 by the conductive path 330 on base unit 300
Electrical property extend to any surface of 300 ontology 320 of base unit, and can not need to carry out as traditional packaged type
Routing connection has the advantages that electrically stabilization is hardly damaged, and is conducive to the installation of subsequent applications circuit.Power discussed below
The thin portion structure of chip composite packing structure 100.
Exemplary power die 200 is insulated gate bipolar transistor (Insulated Gate Bipolar
Transistor, IGBT) chip, one side has collector with grid (gate) and emitter (emitter), the other side
(collector), that is to say, that as shown in Fig. 2, there are two the first conductive parts for setting on the first surface 210 of power die 200
230,250, wherein the first conductive part 230,250 respectively indicates emitter and grid, power die 200 also includes second surface
220 and second conductive part 240, second surface 220 is in contrast to first surface 210, and the second conductive part 240 is set to second surface
220, wherein the second conductive part 240 indicates collector.
The ontology 320 of base unit 300 is made of ceramic material, and two conductive paths 330,360 are formed with mode of printing
In groove bottom 311, slot side 312 and third surface 321, and 312 non-rectilinear wall surface of slot side, groove bottom 311 and slot side 312
Angle theta 1 be equal to 135 degree, and the angle of angle theta 1 is preferably larger than or equal to 90 degree, preferably, angle theta 1 is greater than or waits
In 135 degree, such groove bottom 311 and the inclined setting in slot side 312 can be more advantageous to using mode of printing in groove bottom
311 and slot side 312 on formed conductive path 330,360.
And in the present embodiment, conductive path 330,360 is electrically connected with the first conductive part 230,250 respectively, and at other
In embodiment, conductive path 330,360 can also be formed with plating mode, and can be arranged to the pattern needed on demand, use
To allow the first conductive part 230,250 of first surface 210 of power die 200 electrically to extend to surface (the third table of ontology 320
Face 321 or other surfaces), and can directly be intended to user's welding circuit board, in other embodiments, the number of the first conductive part
Amount and the quantity of conductive path are corresponding, and quantity can be one, two or two or more, carry out according to the structure of power die
Configuration, and power die is also possible to powerful metal-oxide-semifield-effect electric crystal (Metal-Oxide-Semiconductor
Field Effect Transistor, MOSFET), comprising above-mentioned exposure, but not limited to this.
In the present embodiment, power die composite packing structure 100 can also include cover board 400, and cover board 400 is covered on ontology
320, cover board 400 includes the 5th surface 410 and the 5th conductive part 430, and the 5th surface 410 is conductive towards second surface 220, the 5th
Portion 430 is set to the 5th surface 410 and is electrically connected with the second conductive part 240, whereby, can be the electricity of the second conductive part 240
Property toward ontology 320 other surfaces extend.Preferably, cover board 400 is also made of ceramic material, and can be more advantageous to heat dissipation.
In more detail, slot side 312 also includes rank portion 3121, and base unit 300 also includes conductive path 350, conductive
Route 350 extends to third surface 321 from rank portion 3121, and conductive path 350 and the 5th conductive part 430 are electrically connected.Also
It is to say, the second conductive part 240 is electrically connected to conductive path by the 5th conductive part 430 on the 5th surface 410 of cover board 400
350, and since conductive path 350 extends to the third surface 321 of ontology 320, and be more convenient and other circuit connections.
Elargol 512,542 can be respectively set on first conductive part 230,250, corresponding first leads on conductive path 330,360
It is also provided with elargol 511,541 at electric portion 230,250, elargol 522 is set on second conductive part 240, is corresponded on the 5th conductive part 430
Elargol 521,531 is respectively set at second conductive part 240 and at corresponding conductive path 350, the corresponding 5th leads in conductive path 350
Elargol 532 is set at electric portion 430, is connected by the achievable power die 200 of hot pressing and the electrical property of cover board 400 and base unit 300
It connects.The perfusion of colloid 600 bonding cover board 400 is reused in base unit 300, to seal power die 200 and groove 310, and is had
It blocks water and insulating effect.
Whereby, the first conductive part 230,250 of power die 200 electrically extends to ontology by conductive path 330,360
320 third surface 321, and the second conductive part 240 of power die 200 also electrically extends to ontology 320 by conductive path 350
Third surface 321, and can directly be intended to using welding circuit board.
Power die composite packing structure 100 can also be set to base unit 300 comprising radiating fin 700, to increase function
The heat dissipation effect of rate chip 200.Specifically, base unit 300 can also include a metal layer 340, and ontology 320 can be also comprising the
Four surfaces 322 are in contrast to third surface 321, and wherein metal layer 340 is set to the 4th surface 322 and is arranged for radiating fin 700,
And the ontology 320 of base unit 300 can reserve fixed screw holes or screw hole with tooth in production, to facilitate radiating fin 700
Installation.
Herein it should be particularly noted that, Fig. 3, Fig. 4 and Fig. 5 are not along the cross-sectional view of certain specific face line, wherein Fig. 3 is main
For expressing the connection relationship of conductive path 330 and the first conductive part 230, Fig. 4 mainly expresses conductive path 350 and the 5th conduction
Portion 430, the second conductive part 240 connection relationship, Fig. 3 be mainly used to express conductive path 330 and the first conductive part 230 connection
Relationship, therefore ratio and position are all schematically expressed.
Referring to Fig. 6, wherein Fig. 6 is painted a kind of power die composite packing structure according to another embodiment of the present invention
The section of 100a, which regards, to be intended to.Power die composite packing structure 100a includes power die 200a, base unit 300a, cover board
400a。
The structure of base unit 300a is similar with the base unit 300 of Fig. 1, Fig. 2, and conductive path 330a, 360a extend
To third surface 321a.First conductive part 230a, 250a is arranged in first surface 210a in power die 200a, and in second surface
220a be arranged the second conductive part 240a, first conductive part 230a, 250a and conductive path 330a, 360a electric connection mode and
The first conductive part 230,250 of Fig. 1 to Fig. 6 is identical as conductive path 330,360.
The 5th conductive part 430a, the 5th conductive part 430a and the second conductive part is arranged in the 5th surface 410a of cover board 400a
The electric connection mode of 240a and also identical as the second conductive part 240 with the 5th conductive part 430 of Fig. 1 to Fig. 6.But the present embodiment
Cover board 400a also include the 6th surface 420a, the 6th conductive part 440a and conductive path 450a, the 6th surface 420a in contrast to
5th surface 410a, the 6th conductive part 440a are set to the 6th surface 420a, and conductive path 450a is electrically connected the 5th conductive part
430a and the 6th conductive part 440a.Its cover plate 400a can be ceramic material and be made, and the generation type of conductive path 450a
It is that perforation is opened up in the main body prior to cover board 400a, the electro-coppering in perforating is led with completing the 5th conductive part 430a and the 6th
The electric connection of electric portion 440a.
2 the 7th conductive part 461a, 462a can be also set up on 5th surface 410a, and can be also set up on the 6th surface 420a
2 the 8th conductive part 471a, 472a, 2 the 7th conductive part 461a, 462a pass through two with 2 the 8th conductive part 471a, 472a respectively
A conductive channel 481a, 482a are electrically connected, the generation type and conductive path 450a of two of them conductive channel 481a, 482a
It is identical.And tin cream is set on conductive path 330a, 360a, and it is also provided with tin cream on the 7th conductive part 461a, 462a, it can by hot pressing
It is electrically connected conductive path 330a, 360a and the 7th conductive part 461a, 462a.
Therefore, as shown in fig. 6, the first conductive part 230a and the second conductive part 240a on power die 200a all electrically prolong
It extends on the 6th surface 420a of cover board 400a, the knot of power die composite packing structure 100a and circuit board can be more conducive to
It closes.
Referring to Fig. 7, wherein Fig. 7 is painted a kind of power die composite packing structure according to a further embodiment of the present invention
The section of 100b, which regards, to be intended to.Power die composite packing structure 100b includes power die 200b and base unit 300b, and bottom
The structure of seat unit 300b and power die 200b and the power die 200b of Fig. 6 are identical as base unit 300b, but power is brilliant
Piece composite packing structure 100b do not include cover board, therefore can be used colloid 600b sealed groove 310b, with reach waterproof insulation the benefits of.
In addition, being that upper setting is more respectively in the first conductive part of power die 200b 230b, 250b in electric connection mode
A gold goal 550b, 560b, the corresponding place first conductive part 230b, 250b setting elargol 511b on conductive path 330b, 360b,
541b can be such that first conductive part 230b, 250b and conductive path 330b, 360b is electrically connected by heating pressure.
In other embodiments, cover board and base unit all can two-sided preplating or preprinted is conductive or heat-conducting, and can
To connect use as circuit connection purposes or with other heat dissipation elements.
Fig. 8 and Fig. 9 is please referred to, and also referring to Fig. 1 to Fig. 5, wherein Fig. 8 is painted according to a further embodiment of this invention
A kind of power die crystal coated encapsulation method 800 step flow chart, Fig. 9 is painted the sub-step process of a step 830 of Fig. 8
Figure.Power die crystal coated encapsulation method 800 includes step 810, step 820, step 830 and step 840.
In step 810, base unit 300 is provided, base unit 300 includes ontology 320 and recessed in the recessed of ontology 320
Slot 310, ontology 320 have third surface 321, and groove 310 includes groove bottom 311 and slot side 312.
In step 820, it provides conductive layer pre- manufacturing, makes conductive path 330, conductive path in base unit 300
330 extend along slot side 312 toward third surface 321 from groove bottom 311.
In step 830, chip setting operation is provided, it includes sub-step 831 and sub-steps 832.In sub-step 831
In, power die 200 is provided, power die 200 is set to groove 310, power die 200 includes first surface 210 and sets
It is placed in the first conductive part 230 of first surface 210；In sub-step 832, die bond operation is provided, is fixed on power die 200
In groove 310 and the first conductive part 230 is made to be electrically connected conductive path 330.
In step 840, waterproof insulation operation is provided, power die 200 and groove 310 are sealed.
Whereby, the first conductive part 230 that can be allowed on power die 200 electrically extends to the table of 300 ontology 320 of base unit
On face, and it can not need to carry out routing connection as traditional packaged type.
In step 810, the groove bottom 311 of base unit 300 and the angle theta 1 of slot side 312 can be allowed to be greater than or equal to
It 135 degree, can also allow slot side 312 also comprising rank portion 3121, and be conducive to the setting and circuit pattern configuration of conductive path 330
Diversity.
The pre- manufacturing of conductive layer in step 820 printing or electroplating technology can be used to form conductive path 330, pass through
Aforesaid way can quickly form the conductive path 330 of stratiform.
Sub-step 832 in step 830, can respectively be arranged on the first conductive part 230 and conductive path 330 elargol 512,
511, heating makes the first conductive part 230 be electrically connected conductive path 330, and wherein elargol 511,512 can be replaced as tin cream, or
It can be changed to as shown in fig. 7, multiple gold goal 560b are arranged on the first conductive part 230b, and in elargol is arranged on conductive path 330b
511b, heating make the first conductive part 230b be electrically connected conductive path 330b.
In the sealing operation of step 840, cover board 400 can be first provided, base unit 300 is set, reuse the filling of colloid 600
Note bonding cover board 400 is in base unit 300, to seal power die 200 and groove 310.Its cover plate 400 may include the 5th leading
Electric portion 430 is electrically connected the second conductive part 240 of power die 200, then electrically extends on the surface of ontology 320, or such as Fig. 6
Cover board 400a, the electrical property of the second conductive part 240a of power die 200a is directed at cover board 400a and is located on the 6th surface 420a
The 6th conductive part 440a, include but be not limited with above disclosure.
Power die crystal coated encapsulation method 800 includes also step 850, provides fin installation exercise, radiating fin 700 is locked
It is fixed in base unit 300.Metal layer 340 can be first set on the 4th surface 322 of ontology 320, and radiating fin 700 is set to again
Reinforce heat sinking function on metal layer 340.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any fields
Those skilled in the art, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, thus it is of the invention
Subject to protection scope ought be defined depending on claim.
Claims (14)
1. a kind of power die composite packing structure, characterized by comprising:
Power die includes:
First surface；And
First conductive part is located at the first surface；And
Base unit, for the power die is arranged, the base unit includes:
Ontology has third surface；
Groove, recessed in the ontology and for accommodating the power die, the groove includes:
Opening, is surrounded by the third surface；
Slot side, one end connect the third surface；And
Groove bottom, connects the other end of the slot side, and the groove bottom and the angle of the slot side are greater than or equal to 90 degree；
And
At least one conductive path extends along the slot side toward the third surface from the groove bottom；
Wherein the first surface is towards the groove bottom, and first conductive part and the conductive path are electrically connected.
2. power die composite packing structure as described in claim 1, which is characterized in that the power die also includes:
Second surface, in contrast to the first surface；And
Second conductive part is set to the second surface.
3. power die composite packing structure as claimed in claim 2, which is characterized in that also include:
Cover board is covered on the ontology, and the cover board includes:
5th surface, towards the second surface；And
5th conductive part is set to the 5th surface and is electrically connected with second conductive part.
4. power die composite packing structure as claimed in claim 3, which is characterized in that the cover board also includes:
6th surface, in contrast to the 5th surface；
6th conductive part is set to the 6th surface；And
Conductive path is electrically connected the 5th conductive part and the 6th conductive part.
5. power die composite packing structure as claimed in claim 3, which is characterized in that the slot side also includes rank portion,
The base unit also includes conductive path, and the conductive path extends to the third surface from the rank portion, and described is led
Circuit line and the 5th conductive part are electrically connected.
6. power die composite packing structure as described in claim 1 includes also radiating fin, is set to the pedestal list
Member.
7. power die composite packing structure as claimed in claim 6, which is characterized in that the base unit also includes metal
Layer, and the ontology also includes:
4th surface, in contrast to the third surface；
Wherein the metal layer is set to the 4th surface, and the metal layer is arranged for the radiating fin.
8. power die composite packing structure as described in claim 1, which is characterized in that the ontology is ceramic material system
At.
9. a kind of power die crystal coated encapsulation method, characterized by comprising:
Base unit is provided, the base unit includes ontology and the recessed groove in the ontology, and the ontology has third
Face table, the groove include groove bottom and slot side；
The pre- manufacturing of conductive layer is provided, makes conductive path in the base unit, the conductive path is from the groove bottom edge
The slot side extends toward the third surface；
Chip is provided, operation is set, includes:
Power die is provided, the power die is set to the groove, the power die includes first surface and setting
In the first conductive part of the first surface；And
Die bond operation is provided, be fixed on the power die in the groove and is made described in the first conductive part electric connection
Conductive path；And
Waterproof insulation operation is provided, the power die and the groove are sealed.
10. power die crystal coated encapsulation method as claimed in claim 9, which is characterized in that in the sealing operation, first mention
It is set to the base unit for cover board, colloid perfusion is reused and bonds the cover board in the base unit, described in sealing
Power die and the groove.
11. power die crystal coated encapsulation method as claimed in claim 10, which is characterized in that also make comprising providing fin installation
Industry includes:
Radiating fin is locked in the base unit.
12. power die crystal coated encapsulation method as claimed in claim 11, which is characterized in that the slot of the base unit
Bottom surface and slot side angle are greater than or equal to 135 degree, and in the pre- manufacturing of the conductive layer, use printing electroplating technology
Form the conductive path.
13. power die crystal coated encapsulation method as claimed in claim 12, which is characterized in that in the die bond operation,
Elargol or tin cream are respectively set on first conductive part and the conductive path, and heating makes first conductive part be electrically connected institute
State conductive path.
14. power die crystal coated encapsulation method as claimed in claim 12, which is characterized in that in the die bond operation,
Multiple gold goals are set on first conductive part, and elargol or tin cream are set in the conductive path, heating makes described first to lead
Electric portion is electrically connected the conductive path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711459242.7A CN109979884A (en) | 2017-12-28 | 2017-12-28 | Power die composite packing structure and its packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711459242.7A CN109979884A (en) | 2017-12-28 | 2017-12-28 | Power die composite packing structure and its packaging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109979884A true CN109979884A (en) | 2019-07-05 |
Family
ID=67074622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711459242.7A Pending CN109979884A (en) | 2017-12-28 | 2017-12-28 | Power die composite packing structure and its packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109979884A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020008325A1 (en) * | 2000-05-11 | 2002-01-24 | Mitutoyo Corporation | Functional device unit and method of producing the same |
| US20070165414A1 (en) * | 2003-12-11 | 2007-07-19 | Shih-Chang Shei | Light-emitting diode package structure |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| CN103515346A (en) * | 2012-06-14 | 2014-01-15 | 英飞凌科技股份有限公司 | Semiconductor module and method of formation thereof |
| CN104037133A (en) * | 2014-06-26 | 2014-09-10 | 江阴长电先进封装有限公司 | Fan-out packaging method and structure of wafer-level chip |
| US20170038438A1 (en) * | 2015-08-07 | 2017-02-09 | Rohm Co., Ltd. | Semiconductor device |
| US20170040185A1 (en) * | 2015-08-07 | 2017-02-09 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20170054071A1 (en) * | 2015-08-20 | 2017-02-23 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20170098625A1 (en) * | 2014-07-28 | 2017-04-06 | Rohm Co., Ltd. | Semiconductor device |
-
2017
- 2017-12-28 CN CN201711459242.7A patent/CN109979884A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020008325A1 (en) * | 2000-05-11 | 2002-01-24 | Mitutoyo Corporation | Functional device unit and method of producing the same |
| US20070165414A1 (en) * | 2003-12-11 | 2007-07-19 | Shih-Chang Shei | Light-emitting diode package structure |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| CN103515346A (en) * | 2012-06-14 | 2014-01-15 | 英飞凌科技股份有限公司 | Semiconductor module and method of formation thereof |
| CN104037133A (en) * | 2014-06-26 | 2014-09-10 | 江阴长电先进封装有限公司 | Fan-out packaging method and structure of wafer-level chip |
| US20170098625A1 (en) * | 2014-07-28 | 2017-04-06 | Rohm Co., Ltd. | Semiconductor device |
| US20170038438A1 (en) * | 2015-08-07 | 2017-02-09 | Rohm Co., Ltd. | Semiconductor device |
| US20170040185A1 (en) * | 2015-08-07 | 2017-02-09 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20170054071A1 (en) * | 2015-08-20 | 2017-02-23 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104465552B (en) | Encapsulating structure and optical module | |
| KR100752239B1 (en) | Power module package structure | |
| JPH08500469A (en) | Metal electronic package incorporating a multi-chip module | |
| CN105099564B (en) | Encapsulating structure and optical module | |
| CN102403275B (en) | Package on package structure and fabricating method for same | |
| WO2020248905A1 (en) | Wafer-level 3d stacked microchannel heat dissipation structure and manufacturing method therefor | |
| CN102610583B (en) | Package carrier and method for manufacturing the same | |
| CN201845759U (en) | Radiator and radiating system | |
| CN206864452U (en) | A kind of low stray inductance power model of low stray inductance power model and two-side radiation | |
| JP4075204B2 (en) | Multilayer semiconductor device | |
| TWM507138U (en) | Heat dissipation circuit board | |
| JP2012174703A (en) | Led module device, and method of manufacturing the same | |
| CN104934386A (en) | Packaging structure and optical module | |
| CN209448994U (en) | Power module | |
| CN101150098B (en) | Semiconductor device | |
| CN103944354B (en) | Integrated power module packaging structure | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN203192859U (en) | Heat-dissipating lead frame structure | |
| CN205944072U (en) | Semiconductor power device packaging structure | |
| CN105990275A (en) | Power module package and method of fabricating thereof | |
| CN117293101A (en) | Power module, manufacturing method thereof and power equipment | |
| CN109979884A (en) | Power die composite packing structure and its packaging method | |
| CN202142517U (en) | Semiconductor heat dissipating packaging structure | |
| CN105140371A (en) | LED substrate and LED packaging | |
| CN109874223A (en) | Flexible circuitry plate structure that can be thermally conductive |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190705 |