CN109470658A - A kind of device and method measuring reflecting material reflectivity and absorption coefficient - Google Patents
A kind of device and method measuring reflecting material reflectivity and absorption coefficient Download PDFInfo
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- CN109470658A CN109470658A CN201811316791.3A CN201811316791A CN109470658A CN 109470658 A CN109470658 A CN 109470658A CN 201811316791 A CN201811316791 A CN 201811316791A CN 109470658 A CN109470658 A CN 109470658A
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- sample room
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
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Abstract
The invention discloses a kind of device and method for measuring reflecting material reflectivity and absorption coefficient, and device includes laser light source module, collimating module, sample room, luminous intensity measurement module.Wherein, laser light source module is connected with collimating module, and collimating module is connected with sample room, and sample room is connected with luminous intensity measurement module.Laser light source module includes semiconductor laser with tunable, current control system.Collimating module includes laser alignment mirror in cover cylinder on main optical path, optical bench.Sample room includes the first sample room, the second sample room.Luminous intensity measurement module includes photoelectric conversion probe, light power meter, terminal.Measurement method is to measure initial beam intensity and the corresponding transmitted light intensity of different samples respectively after device is completed, using derivation algorithm can reflectivity to measured material and absorption coefficient calculate.This method can provide the reflectivity and absorption coefficient of material simultaneously, and precision meets requirement, easy to operate, it is easy to accomplish.
Description
Technical field
The present invention relates to nuclear radiation detection fields, especially for measurement reflecting material reflectivity a kind of in detector and suction
The device and method for receiving coefficient.
Background technique
In nuclear radiation detection field, ray is measured usually using detector, with energy, the intensity etc. for obtaining ray
Information.Wherein, scintillation detector is as a kind of common detector, because its detection efficient is higher, time resolution is shorter, operation compared with
For the advantages such as simple, become one of the detector being most widely used.Scintillation detector at work, the crystalline substance of detector front end
Body absorb incoming particle energy, be translated into fluorescence, by rear end photomultiplier tube by fluorescence conversion be electric pulse, pass through
The whole wave of electronic system, amplification, are input to multichannel analyzer, finally obtain the power spectrum of incoming particle in a computer.Experimentally,
It is input in photomultiplier tube in order to which the fluorescence for issuing scintillator is as much as possible, one layer is usually wrapped up on the outside of crystal instead
Material is penetrated, only reserves the surface contacted with photomultiplier tube as exit window, if so that the fluorescence for being emitted to other surfaces passes through
Dry secondary reflection can be finally emitted from exit window.Therefore, the reflectivity of reflecting material and absorption coefficient, which just become, characterizes the material
The important indicator of superiority and inferiority.
Existing albedo measurement technology includes the methods of spectrophotometry, optical cavity ring-down technology, wherein optical cavity ring-down
Technology is only used for reflectivity in the measurement of 98% or more material, and precision is higher, and spectrophotometry required precision relatively
It is more commonly used when low.In order to improve the measurement accuracy of spectrophotometry, needing to carry out multiple reflections, index path is complex,
It needs to use more professional equipment simultaneously, is not suitable for being promoted in other field.In addition, in assembling nuclear radiation detector
When, it is sometimes desirable to make multilayer reflective layers to meet the needs of certain special designings, at this moment, it is also necessary to the absorption to reflecting material
Coefficient measures, and the above method can only provide the reflectivity of material, is not able to satisfy the demand of experiment.
Summary of the invention
The purpose of the present invention is being directed to the deficiency of above-mentioned existing measuring technique, reflecting material can be measured simultaneously by providing one kind
The device and method of reflectivity and absorption coefficient, easy to operate, cost is relatively low, is easy to build and measure.
The technical solution that the present invention is taken by solution its technical problem are as follows:
A kind of device measuring reflecting material reflectivity and absorption coefficient, comprising: laser light source module, collimating module, sample
Product room, luminous intensity measurement module.
Wherein, laser light source module is connected with collimating module, and collimating module is connected with sample room, sample room and light intensity
Measurement module is connected.
Laser light source module includes semiconductor laser with tunable, current control system.Collimating module includes laser alignment
Mirror, optical bench.Sample room includes the first sample room, the second sample room.Luminous intensity measurement module includes photoelectric conversion probe, optical power
Meter, terminal.
The semiconductor laser with tunable is the sampling grating DBR laser based on Current Control Technology, can be passed through
It adjusts it and controls electric current, it is made to export the laser of specific wavelength.
The current control system is the current control equipment to match with the semiconductor laser with tunable, energy
It is set as needed and exports electric current, to control the output wavelength of laser.
The laser alignment mirror in cover cylinder on main optical path is the laser alignment that is coupled with the semiconductor laser with tunable output wavelength
Mirror, port are connected with the semiconductor laser with tunable output end, to export collimated collimated light beam.
The first sample room that the sample room includes and the second sample room, to contain the first different sample of thickness with
Second sample.First sample and the second sample are same material, and for thin slice in homogeneous thickness and thickness is it is known that thin slice area
Greater than laser beam spot size, and surfacing, it is homogeneous, without obvious scratch and it is stained.It is fixed on described
In front of collimator exit end at 1m, surface is vertical with laser beam, and another surface and the photoelectric conversion probe are in close contact, with
Measure transmitted light intensity as complete as possible.
The photoelectric conversion probe is the photo-electric conversion element to match with the light power meter, light sensitive area
Area is greater than the facula area that laser is formed behind the sample room.The photoelectric conversion probe passes through dedicated signal
Line transfers signals in the light power meter, and display panel can provide the intensity signal measured.
The optical bench length is capable of fixing other component in 1.2m or more, and is placed in horizontal table top.
The terminal is used to record and handle the data measured, finally obtains the anti-of the detected materials
Penetrate rate and absorption coefficient.
Measurement method using the device of above-mentioned measurement reflecting material reflectivity and absorption coefficient to detected materials, this method
Include the following steps:
Step 1: semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe are fixed on optical bench,
The distance between middle laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe are in 1m or so.Semiconductor laser with tunable is opened, electric current is passed through
Its Output of laser wavelength of set-up of control system, adjust semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe it
Between relative position, so that its collimated light beam is emitted from laser alignment mirror in cover cylinder on main optical path, hot spot is located at photoelectric conversion probe light sensitive area
Center, opens light power meter, and record reads I at this time0。
Step 2: keeping semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe position constant, by first
Sample room is fixed in front of photoelectric conversion probe, and the two fits closely, and makes the first sample chamber surface perpendicular to incident ray, record
Under light power meter at this time reading I1。
Step 3: keeping semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe position constant, the is removed
Second sample room is placed in front of photoelectric conversion probe by a sample room, and the two fits closely, and makes sample chamber surface perpendicular to entering
Light is penetrated, the reading I of light power meter at this time is recorded2。
Step 4: above-mentioned steps recorded data is input in terminal, reflectivity and absorption coefficient are used
Derivation algorithm obtains the reflectivity and absorption coefficient of corresponding detected materials.
The invention has the following advantages over the prior art: one, the configuration of the present invention is simple, it can be in a short period of time
The assembling and measurement of completion system considerably increase working efficiency to carry out further work;Two, the present invention is in measurement material
The absorption coefficient that material can be provided on the basis of material reflectivity simultaneously can be provided when carrying out the design such as reflection multilayer material
More complete data;Three, the algorithm that the present invention uses is relatively easy, and the complexity of calculating is reduced in the case where ensuring accurate situation
Degree, so that this measurement method is more conducive to promoting.
Detailed description of the invention
Fig. 1 is the apparatus structure schematic diagram of present invention measurement reflecting material reflectivity and absorption coefficient.
In Fig. 1: 1 is semiconductor laser with tunable, and 2 be current control system, and 3 be laser alignment mirror in cover cylinder on main optical path, and 4 be sample room, 5
It is light power meter for photoelectric conversion probe, 6,7 be terminal, and 8 be optical bench.
Specific embodiment
A kind of dress for measuring reflecting material reflectivity and absorption coefficient proposed by the present invention is specifically described below with reference to Fig. 1
It sets:
In the present embodiment, entire measuring device is arranged in closed darkroom, and the surrounding in darkroom uses absorption coefficient
Very high black material makes wall and detection device keep certain distance as wall, to minimize environment to light
Reflection, to improve measurement accuracy.
The control size of current that current control system 2 is input to semiconductor laser with tunable 1 is set, its emission wavelength is made
It is adjusted to 480nm, this is that the scintillation crystal emission wavelength used in assembling detector is determined.Using with the wavelength institute
Matched laser alignment mirror in cover cylinder on main optical path 3 collimates output light with semiconductor laser with tunable 1.Light source and collimator apparatus are fixed
In one end of optical bench 8, the fixed photoelectric conversion probe 5 at 3 exit end 1m of laser alignment mirror in cover cylinder on main optical path.Photoelectric conversion probe 5 passes through
Signal wire is connected to light power meter 6, and finishing device is built substantially.
The PTFE plate that detected materials have chosen with a thickness of 0.5mm and 1mm, length and width are 100mm, and 0.5mm is thick in test
Plate is as the first sample, and 1mm slab is as the second sample.First sample and the second sample are respectively charged into the first sample room and the
The preparation of sample is completed in two sample rooms.
Light power meter 6 is the laser power meter that can set matching wavelength, and the matching wavelength of light power meter 6 is arranged before measuring
For 480nm, suitable range is adjusted, so that reading is accurate.
The method of measurement reflecting material reflectivity and absorption coefficient provided by the invention, it is described that the specific method is as follows:
Step 1: semiconductor laser with tunable 1, laser alignment mirror in cover cylinder on main optical path 3 and photoelectric conversion probe 5 are fixed on optical bench 8
On.The power supply for opening semiconductor laser with tunable 1 is arranged its Output of laser wavelength by current control system 2, adjusts adjustable
Relative position between humorous semiconductor laser 1, collimator 2 and photoelectric conversion probe 5, enables its collimated light beam from laser quasi
Straight mirror 3 is emitted, and hot spot is located at the center of the smooth sensitive area of photoelectric conversion probe 5, opens light power meter 6, and record is read at this time
I0;
Step 2: keep semiconductor laser with tunable 1, laser alignment mirror in cover cylinder on main optical path 3 and 5 position of photoelectric conversion probe constant, it will
First sample room of the PTFE plate equipped with 0.5mm thickness is placed in the front of photoelectric conversion probe 5, and the two fits closely, and makes sample
Product chamber surface records the reading I of light power meter 6 at this time perpendicular to incident ray1;
Step 3: keeping semiconductor laser with tunable 1, laser alignment mirror in cover cylinder on main optical path 3 and 5 position of photoelectric conversion probe constant, take
Second sample room of the PTFE plate equipped with 1mm thickness, is placed in the front of photoelectric conversion probe 5, the two by lower first sample room
It fits closely, makes sample chamber surface perpendicular to incident ray, record the reading I of light power meter 6 at this time2;
Step 4: above-mentioned steps recorded data is input in terminal 7, reflectivity and absorption coefficient are used
Derivation algorithm obtains the reflectivity and absorption coefficient of corresponding detected materials.
In short, can be surveyed the present invention provides a kind of device and method for measuring reflecting material reflectivity and absorption coefficient
The reflectivity and absorption coefficient for measuring common used material, can satisfy use demand for the measurement accuracy of reflecting material.Compared to
Past common method, operation of the present invention are simple, it is easy to accomplish, it can be carried out accordingly promoting in many fields.
Claims (5)
1. a kind of device for measuring reflecting material reflectivity and absorption coefficient, it is characterised in that: including laser light source module, collimation
Module, sample room, luminous intensity measurement module;Wherein laser light source module is connected with collimating module, collimating module and sample room phase
Connection, sample room is connected with luminous intensity measurement module;Laser light source module includes semiconductor laser with tunable, current control system
System;Collimating module includes laser alignment mirror in cover cylinder on main optical path, optical bench;Sample room includes the first sample room, the second sample room;Luminous intensity measurement module
Including photoelectric conversion probe, light power meter, terminal.
2. a kind of device for measuring reflecting material reflectivity and absorption coefficient according to claim 1, it is characterised in that: institute
The semiconductor laser with tunable stated is the sampling grating DBR laser based on Current Control Technology, can be by adjusting its control
Electric current makes it export the laser of specific wavelength.
3. a kind of device for measuring reflecting material reflectivity and absorption coefficient according to claim 1, it is characterised in that: institute
The light for stating laser light source module sending is collimated by the collimating module, is irradiated to the sample chamber surface, passes through sample
The light of product room is collected by the luminous intensity measurement module, finally obtains light intensity readings, is carried out at data by special algorithm
Reason.
4. a kind of device for measuring reflecting material reflectivity and absorption coefficient according to claim 1, it is characterised in that: institute
The first sample room and the second sample room that the sample room stated includes, to contain thickness different the first sample and the second sample;
First sample and the second sample are same material, are thin slice in homogeneous thickness and thickness it is known that thin slice area is greater than laser
Beam and focus size, and surfacing, it is homogeneous, without obvious scratch and it is stained.
5. a kind of method for measuring reflecting material reflectivity and absorption coefficient, it is characterised in that this method includes the following steps:
Step 1: semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe are fixed on optical bench, wherein swashing
The distance between light collimating mirror and photoelectric conversion probe open semiconductor laser with tunable, pass through current control in 1m or so
Its Output of laser wavelength is arranged in system, adjusts between semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe
Relative position enables its collimated light beam to be emitted from laser alignment mirror in cover cylinder on main optical path, and hot spot is located at photoelectric conversion probe light sensitive area center
The heart, opens light power meter, and record reads I at this time0;
Step 2: keeping semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe position constant, by the first sample
Room is fixed in front of photoelectric conversion probe, and the two fits closely, makes the first sample chamber surface perpendicular to incident ray, record this
When light power meter reading I1;
Step 3: keeping semiconductor laser with tunable, laser alignment mirror in cover cylinder on main optical path and photoelectric conversion probe position constant, the first sample is removed
Second sample room is placed in front of photoelectric conversion probe by product room, and the two fits closely, and makes sample chamber surface perpendicular to incident light
Line records the reading I of light power meter at this time2;
Step 4: above-mentioned steps recorded data is input in terminal, solved using reflectivity and absorption coefficient
Algorithm obtains the reflectivity and absorption coefficient of corresponding detected materials.
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Cited By (3)
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CN110763657A (en) * | 2019-11-20 | 2020-02-07 | 江苏赛诺格兰医疗科技有限公司 | Photoelectric digital conversion system for reflective material reflectivity test system |
CN111150401A (en) * | 2019-12-30 | 2020-05-15 | 浙江大学 | Method for measuring tissue thickness by detecting emergent light intensity |
CN114397270A (en) * | 2021-12-06 | 2022-04-26 | 华中光电技术研究所(中国船舶重工集团公司第七一七研究所) | Water attenuation coefficient measuring system |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110763657A (en) * | 2019-11-20 | 2020-02-07 | 江苏赛诺格兰医疗科技有限公司 | Photoelectric digital conversion system for reflective material reflectivity test system |
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CN111150401A (en) * | 2019-12-30 | 2020-05-15 | 浙江大学 | Method for measuring tissue thickness by detecting emergent light intensity |
CN114397270A (en) * | 2021-12-06 | 2022-04-26 | 华中光电技术研究所(中国船舶重工集团公司第七一七研究所) | Water attenuation coefficient measuring system |
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