CN109256620B - Terahertz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy level - Google Patents
Terahertz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy level Download PDFInfo
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Abstract
The invention discloses a design method of a terahertz broadband negative refractive index metamaterial based on dynamic regulation and control of equivalent energy levels. The method utilizes a specific five-layer resonance unit structure to realize the design of dynamically regulating the terahertz broadband negative refractive index metamaterial, and the resonance unit structure comprises the following components from bottom to top: the first layer is a semiconductor annular hole structure; the second layer is a metal resonance structure; the third layer is a dielectric layer; the fourth layer is a metal resonance structure the same as the second layer; the fifth layer is a semiconductor annular hole structure the same as the first layer. According to the corresponding relation between the equivalent energy level of the metamaterial resonant unit structure and external excitation, namely: when the metamaterial is not subjected to external excitation, the metamaterial can be equivalent to two equivalent energy levels; when the metamaterial is excited by an external source, the metamaterial can be equivalent to four equivalent energy levels. And (3) dynamically regulating and controlling the equivalent energy level of the metamaterial by using different external excitation modes (electric control, temperature control, light control, pressure control and the like), thereby realizing the dynamic regulation and control of the negative refractive index of the metamaterial.
Description
The technical field is as follows:
the invention belongs to the technical field of terahertz (THz) metamaterial design, and particularly relates to a THz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy levels.
Background art:
the THz wave has a great application value in the fields of biomedicine, national defense and military communication, security inspection nondestructive testing and the like because of having a plurality of unique properties such as instantaneity, low energy property, broadband property, extremely strong penetrating power of non-polar substances and the like. How to effectively regulate THz wave according to application requirements becomes a research focus in the related field, but the regulation of THz is limited due to the lack of modulators. The artificial composite metamaterial composed of sub-wavelength structural units in a certain arrangement mode is favored by researchers due to the unique electromagnetic response characteristic. The electromagnetic properties of the metamaterial mainly depend on the unit structure and the unit arrangement mode, but not on the properties of specific composition materials. Researches show that the metamaterial can realize negative refractive index which does not exist in nature, and the negative refractive index metamaterial has a series of abnormal phenomena including negative refraction effect, inverse Doppler effect, evanescent wave amplification and the like. However, the research of the THz negative refractive index metamaterial still faces many challenges, such as narrow bandwidth, difficulty in realizing dynamic regulation and the like. Therefore, the dynamically adjustable THz broadband negative refractive index metamaterial becomes a new research hotspot.
The main technical approach of dynamic regulation of the THz negative refractive index metamaterial is to add a semiconductor material or a diode in a structural unit or immerse a resonant structure in liquid crystal. However, the addition of diodes to the resonant structure greatly increases the processing cost, and the immersion of the resonant structure in liquid crystal limits the application range of the negative refractive index metamaterial. By adding the semiconductor material into the structural unit, the corresponding semiconductor material can be selected according to application requirements and a dynamic regulation and control mode, so that the dynamic regulation and control of the metamaterial can be realized. At present, the main design method of the negative refractive index metamaterial and the defects thereof are as follows: the negative refractive index is realized by combining the electric resonance unit and the magnetic resonance unit, but the bandwidth of the negative refractive index based on the method is narrow, so that the simultaneous dynamic regulation and control of the negative dielectric constant and the negative magnetic permeability are difficult to realize; secondly, the broadband negative-refractive-index metamaterial is realized through a multilayer fishing net structure, but the dynamic regulation and control of the negative refractive index are difficult to realize through a multilayer overlapping structure; and thirdly, the negative refractive index metamaterial is designed through a chiral structure, but the negative refractive index is narrow in bandwidth and difficult to realize dynamic control of chirality. In addition, although many different negative refractive index metamaterials have been proposed, these metamaterials are not universally applicable. Therefore, it is important to develop a broadband negative refractive index metamaterial with dynamic adjustability.
In summary, a THz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy levels is provided. The metamaterial can change the conductivity of a semiconductor material by selecting different external stimuli (voltage, temperature, light or pressure) so as to dynamically regulate and control the equivalent energy level of the metamaterial, thereby realizing the regulation and control of the broadband negative refractive index of the THz metamaterial. The metamaterial can select different regulation and control modes according to different application requirements, is flexible and changeable in resonance structure, and can be applied to other wave bands by regulating structural parameters.
The invention content is as follows:
the invention provides a THz broadband negative refractive index metamaterial structure for realizing dynamic modulation based on a dynamic regulation equivalent energy level, aiming at the defects and shortcomings in the design of the conventional negative refractive index artificial metamaterial.
The technical scheme adopted by the invention is that a THz broadband negative refractive index metamaterial structure for dynamically regulating and controlling equivalent energy levels is provided, the structure utilizes a specific five-layer resonance unit structure to realize dynamic regulation and control of the THz broadband negative refractive index metamaterial, and the resonance unit structure comprises the following components from bottom to top: the first layer is a semiconductor hole structure which is an annular hole; the second layer is a metal resonance structure which is an annular resonance ring; the third layer is a dielectric layer; the fourth layer is a metal resonance structure the same as the second layer; the fifth layer is a semiconductor annular hole structure the same as the first layer.
Wherein, the annular semiconductor hole structure can be but not limited to a circular ring hole or a square ring hole.
Wherein the metal resonant structure may be, but is not limited to, a closed-loop resonant structure or an open-loop resonant structure.
Wherein, the dielectric layer can be but not limited to teflon, polyimide and sapphire which are flexible materials.
Wherein, under the external excitation of the resonance unit structure, the annular semiconductor hole must completely replace the metal resonance structure.
The external excitation of the resonant unit structure can be electric control, temperature control, light control or pressure control.
Further, the resonant unit structure of the metamaterial is equivalent to an atom, wherein the dielectric layer is equivalent to an atomic nucleus, the resonant structure is equivalent to free electrons, and different resonant modes can be equivalent to free electrons in different motion states.
Further, according to the corresponding relation between the equivalent energy level and the electromagnetic response characteristic of the resonant unit structure and the corresponding relation between the equivalent energy level and external excitation, the dynamic regulation and control of the external excitation on the electromagnetic response characteristic of the resonant unit structure can be realized, and further the THz negative refractive index metamaterial with dynamic regulation and control can be realized.
Furthermore, the electromagnetic response of the metamaterial is divided into electric response and magnetic response, the electric response is excited by the upper layer resonance structure and the lower layer resonance structure, and a preset negative dielectric constant can be generated; the magnetic response is excited by the interlayer interference effect, and the preset negative magnetic conductivity can be generated.
Further, by selecting reasonable structures and parameters, the effective dielectric constant and the magnetic permeability of the metamaterial can meet the following requirements in a wide frequency band:
εrμi+εiμr<0 (1)
to achieve a broadband negative index of refraction. Wherein epsilonrAnd εiRespectively representing the real part and the imaginary part of the effective dielectric constant of the metamaterial; mu.srAnd muiRepresenting the real and imaginary parts, respectively, of the effective permeability of the metamaterial.
Further, an equivalent L-C resonant circuit is adopted to analyze the equivalent energy level of the resonant structure. Wherein the resonant frequency of the L-C resonant circuit is represented as:
wherein alpha is the proportionality coefficient of the resonance structure, LmEquivalent inductance of metal structure, CeffIs an equivalent capacitance.
Further, according to the principle of equivalent impedance of the metal resonance structure, the equivalent impedance of the metal resonance structure can be obtained as follows:
wherein, ω is the angular frequency of the incident wave, and the equivalent capacitance of the metal resonance structure is:
wherein l is the length of the metal resonance structure, S is the area of the metal resonance structure, epsilon0Is a vacuum dielectric constant of ∈mIs the dielectric constant of the metal.
Further, the real part and the imaginary part of the dielectric constant of the good metal conductor are respectively described as follows according to a Drude model in the THz wave band:
wherein, tau is relaxation time, omegapIs the plasma frequency of the metal.
Furthermore, the dielectric constant of the good metal conductor adopts a formula epsilon in the terahertz wave bandm＝εmr+iεmiAnd (4) calculating.
Further, according to equations (3) and (4), the equivalent inductance of the metal resonant structure is:
further, when the metal resonance structures of the second layer and the fourth layer of the metamaterial structure are excited by incident THz waves, equivalent L-C resonance circuits of the metamaterial structure are connected in series.
Further, the metal resonance structures of the second layer and the fourth layer of the metamaterial structure are the same, so that the equivalent inductances thereof are the same, namely Lbottom＝ Lupper。
Further, the series equivalent inductance is:
Leff＝Lupper+Lbottom＝2Lupper (8)
further, when the metal resonant structure of the metamaterial structure is excited by incident THz waves, mutual inductance is generated while interlayer interference effects are excited, and therefore the resonant frequency is moved.
Further, when the interlayer magnetic response is enhanced, the mutual inductance is enhanced, resulting in an increase in the equivalent inductance by M. Thus, the equivalent inductance of a metal resonant structure is expressed as:
LI-M＝Leff+M (9)
further, as the inter-layer magnetic response diminishes, the mutual inductance diminishes, resulting in a reduction M' in the equivalent inductance. Thus, the equivalent inductance of a metal resonant structure is expressed as:
LI-E＝Leff-M′ (10)
further, the structural units of the metamaterial may be equivalent to 2 equivalent energy levels. Further, according to the formulas (2), (9) and (10), the magnetic response at low frequencies is enhanced and the magnetic response at high frequencies is weakened.
Further, when the semiconductor annular hole resonance structures of the first layer and the fifth layer of the metamaterial structure are excited externally and the metal resonance structure is completely replaced, equivalent L-C resonance circuits of the annular hole resonance structures are connected in parallel when the inner side and the outer side of the same layer are excited by incident waves.
Further, equivalent inductances of the ring hole resonant structure at the inner side and the outer side of the same layer are respectively expressed as LeAnd LiAnd the equivalent inductance meets the following requirements:
further, the annular holes of the first layer and the fifth layer are the same, so that the equivalent inductance thereof can be calculated according to equation (11).
Further, the surface current directions of the inner side part and the outer side part of the metamaterial fifth-layer annular hole resonant structure are opposite, mutual inductance is enhanced, and equivalent inductance is increased by M1The equivalent inductance is expressed as:
L1eff＝Lp+M1 (12)
further, the surface current directions of the inner side part and the outer side part of the metamaterial first layer annular hole resonant structure are opposite, mutual inductance is enhanced, and the metamaterial first layer annular hole resonant structure is conductiveResulting in an increase of the equivalent inductance by M1' its equivalent inductance is expressed as:
L1eff′＝Lp+M1′ (13)
further, the equivalent L-C resonance circuits of the inner parts of the first layer pore structure and the fifth layer pore structure are connected in series.
Further, when the interlayer magnetic response of the inner side portion of the annular hole resonance structure is enhanced, the mutual inductance is enhanced, resulting in an increase of the equivalent inductance by M2。
Further, when the interlayer magnetic response of the inner portion of the annular hole resonance structure is weakened, the mutual inductance is weakened, resulting in a reduction M of the equivalent inductance2＇。
Further, the equivalent L-C resonant circuits of the outer parts of the first layer hole structure and the fifth layer hole structure are connected in series.
Further, when the interlayer magnetic response of the outer part of the annular hole resonant structure is enhanced, the mutual inductance is enhanced, so that the equivalent inductance is increased by M3。
Further, when the interlayer magnetic response of the outer part of the annular hole resonant structure is weakened, the mutual inductance is weakened, resulting in the reduction M of the equivalent inductance3＇。
Further, the equivalent inductance of the ring hole resonant structure when the mutual inductance is enhanced is expressed as:
LII-M＝L1eff+L1eff′+M2+M3 (14)
further, the equivalent inductance of the ring hole resonant structure when the mutual inductance is weakened is expressed as:
LII-E＝L1eff+L1eff′-M2′-M3′ (15)
further, the structural units of the metamaterial may be equivalent to 4 equivalent energy levels.
Further, according to the formulas (2), (14) and (15), the magnetic response at low frequencies is enhanced and the magnetic response at high frequencies is weakened.
The structure of the negative-refractive-index metamaterial resonance unit with the dynamically regulated equivalent energy level has five layers from bottom to top, wherein the first layer and the fifth layer are annular semiconductor hole structures with the same structure; the second layer and the fourth layer are annular metal resonance structures with the same structure; the middle (third layer) is a dielectric layer structure. When the metamaterial is not excited by external excitation, the resonance of the metamaterial is excited by the upper and lower layers of metal resonance structures, and the unit structure of the metamaterial can be equivalent to two equivalent energy levels; when the metamaterial is subjected to external excitation, the conductivity of the semiconductor material is increased, so that the metal resonant structure is completely replaced by the annular semiconductor hole structure. At this time, the unit structure of the metamaterial is equivalent to four equivalent energy levels. Therefore, the metamaterial can realize dynamic regulation and control of equivalent energy levels, and further realize dynamic control of negative refractive index.
The invention has the beneficial effects that: different from the situation of the prior art, the metamaterial structure is not limited to the type and the regulation and control mode of the resonant structure, so that the metamaterial designed according to the invention has better universality and flexibility, the design accuracy is improved, and the design cost is reduced.
Description of the drawings:
in order to more clearly describe the embodiments of the present invention in further detail, the drawings used in the embodiments will be briefly described below. It is to be noted herein that the appended drawings illustrate only further described embodiments of the invention and are therefore not to be considered limiting of its scope.
Fig. 1 is a schematic structural diagram of a negative refractive index metamaterial according to embodiment 1 of the present invention, wherein the metamaterial is composed of a metal ring, a semiconductor silicon ring hole structure and a teflon intermediate medium layer.
Fig. 2 is a graph showing the transmittance of the negative refractive index metamaterial according to the embodiment 1 of the present invention at different conductivities of the semiconductor silicon.
FIG. 3 is a diagram of current and magnetic field distribution at resonant frequencies I-M and I-E, an equivalent L-C circuit diagram, and an equivalent energy level diagram when a negative index metamaterial pore structure is not excited according to embodiment 1 of the present invention.
FIG. 4 is a diagram of current and magnetic field distribution at resonance frequencies II-M and II-E, an equivalent L-C circuit diagram, and an equivalent energy level diagram when the annular hole structure material of the negative refractive index metamaterial according to embodiment 1 of the present invention is metallic aluminum.
FIG. 5 shows the effective permittivity, effective permeability and refractive index of the metamaterial when the negative refractive index metamaterial is not excited by external light according to the embodiment 1 of the invention.
Fig. 6 shows the effective permittivity, effective permeability and refractive index of the metamaterial when the negative refractive index metamaterial is optically excited so that the conductivity of the semiconductor silicon is 60000 siemens/m according to embodiment 1 of the present invention.
FIG. 7 is a schematic structural diagram of a negative refractive index metamaterial according to an embodiment 2 of the present invention, wherein the metamaterial is a combination of a metal square ring and a semiconductor vanadium dioxide square ring hole structure.
FIG. 8 shows the transmittance of the negative refractive index metamaterial according to the embodiment 2 of the present invention under different conductivities of semiconductors.
In the figure: 1 and 5 are semiconductor hole structures, 2 and 4 are metal resonant structures, and 3 is an intermediate dielectric layer.
The specific embodiment is as follows:
according to the metamaterial structure, the design scheme in the embodiment of the invention is clearly and completely described by combining the drawings in the embodiment; the described embodiments are only some of the embodiments of the present invention and are not meant to limit the scope of the present invention in any way.
Example 1
The negative-refractive-index metamaterial unit structure based on the dynamic regulation and control equivalent energy level is composed of five layers, and the five layers are sequentially from bottom to top: the semiconductor ring-shaped circular hole structure comprises a semiconductor ring-shaped circular hole structure 1 made of silicon, a metal ring structure 2 made of good conductor aluminum, a low-loss polymer Teflon intermediate dielectric layer 3, a metal aluminum ring resonance structure 4 and a semiconductor silicon ring-shaped circular hole structure layer 5, as shown in the attached drawing 1. The semiconductor annular round hole structure and the metal resonance structure have the same central symmetry axis, and the semiconductor structure completely covers the metal resonance structure. As an example, the period of the structural unit is 100 micrometers, the diameter of the metal circular ring is 70 micrometers, and the outer diameter and the hole width of the silicon circular hole are 96 micrometers and 12 micrometers respectively; the thickness of the semiconductor silicon annular round hole layer, the thickness of the metal round ring and the thickness of the Teflon dielectric layer are respectively 3.5 microns, 0.5 microns and 43 microns.
Fig. 2 is a transmittance spectrum of the negative refractive index metamaterial in the embodiment under external excitation with different light intensities. Incident electromagnetic waves vertically enter the surface of the metamaterial, the conductivity of semiconductor silicon is changed through external light intensity, the equivalent energy level of the metamaterial is further dynamically regulated, and tuning of the transmittance and the negative refractive index is achieved. The transmissivity of the metamaterial is tuned from low transmissivity to a high transmissivity along with the increase of the conductivity. And calculating the equivalent refractive index of the metamaterial according to the S parameter obtained by simulation calculation.
FIG. 3 shows that when the metamaterial with negative refractive index is not excited by light, the resonance of the metamaterial is excited by the metal rings on the upper layer and the lower layer, the surface currents of the upper metal ring and the lower metal ring are opposite at the resonance frequency I-M, the magnetic response is enhanced, and the mutual inductance is enhanced; at the resonance frequency I-E, the magnetic response is reduced and the mutual inductance is reduced. At this time, the resonance of the metamaterial may be equivalent to 2 equivalent energy levels.
Fig. 4 shows that when the metal circular ring structure is completely replaced by the annular circular hole structure, the resonance of the negative-refractive-index metamaterial is excited by the annular circular holes of the upper and lower layers. In order to better observe the resonance characteristics of the metamaterial with the annular circular hole structure, the material of the semiconductor hole structure is made of metal aluminum. The directions of currents on the surfaces of the upper metal circular hole and the lower metal circular hole are the same at the resonance frequency II-M, and magnetic response is enhanced, so that mutual inductance is enhanced; the directions of the upper surface current and the lower surface current are opposite at the resonance frequency II-E, and the magnetic response is weakened, so that the mutual inductance is weakened; the current directions of the inner side and the outer side of the annular circular hole structure are opposite, but the magnetic response is enhanced, so that the mutual inductance of the upper part and the lower part which are connected in parallel is enhanced. Thus, when the metallic ring resonant structure is completely replaced, the negative index metamaterial is tuned from 2 equivalent energy levels to 4 equivalent energy levels.
FIG. 5 shows the effective permittivity, effective permeability and refractive index of a negative index metamaterial when not optically excited. The refractive index is negative from 0.64THz to 1.56 THz. Wherein, the refractive index is a single negative refractive index with negative magnetic conductivity and positive dielectric constant from 0.64THz to 0.70 THz; the refractive index is double negative refractive index with negative magnetic conductivity and dielectric constant in the range of 0.70THz to 0.86 THz; the refractive index is a single negative refractive index with negative magnetic permeability and positive dielectric constant between 0.86THz and 1.10 THz; the refractive index is a single negative refractive index with negative dielectric constant and positive magnetic conductivity between 1.10THz and 1.24 THz; in the range of 1.24THz to 1.56THz, the refractive index is a double negative refractive index in which both permeability and permittivity are negative.
FIG. 6 shows the effective dielectric constant, effective permeability and refractive index of the metamaterial when the metamaterial with negative refractive index is excited by light and the power of the incident pump light is 900 mW. The refractive index is negative from 0.88THz to 1.34 THz. Wherein, the refractive index is double negative refractive index with negative magnetic conductivity and dielectric constant from 0.88THz to 1.20 THz; in the range of 1.20THz to 1.34THz, the refractive index is a single negative refractive index having a negative magnetic permeability and a positive dielectric constant. Therefore, the equivalent energy level of the metamaterial can be dynamically regulated and controlled in an external light excitation mode, and further the dynamic regulation and control of the broadband negative refractive index are achieved.
Example 2
The negative-refractive-index metamaterial unit structure based on the dynamic regulation and control equivalent energy level is composed of five layers, and the five layers are sequentially from bottom to top: the semiconductor device comprises a semiconductor annular square hole structure 1 made of vanadium dioxide, a metal square ring structure 2 made of good conductor copper, a low-loss polymer Teflon intermediate dielectric layer 3, a metal copper square ring resonance structure 4 and a semiconductor vanadium dioxide annular square hole structure layer 5, as shown in the attached drawing 7. The semiconductor square hole structure and the metal square ring resonance structure are arranged at the same position of a central symmetry axis, and the semiconductor structure completely covers the metal resonance structure. As an example, the period of the structural unit is 100 micrometers, the length of the metal square ring is 60 micrometers, and the length and the pore width of the vanadium dioxide annular square pore are 84 micrometers and 12 micrometers respectively; the thickness of the semiconductor vanadium dioxide annular square hole layer, the thickness of the metal square ring and the thickness of the Teflon dielectric layer are respectively 4 microns, 0.2 microns and 43 microns.
Fig. 8 is a transmittance spectrum under external excitation at different temperatures for the negative refractive index metamaterial in the present embodiment. Incident electromagnetic waves vertically enter the surface of the metamaterial, the conductivity of the semiconductor vanadium dioxide is changed through the external temperature, the equivalent energy level of the metamaterial is dynamically regulated, and the tuning of the transmittance and the negative refractive index is realized. The transmissivity of the metamaterial is tuned from low transmissivity to a high transmissivity along with the increase of the conductivity. And calculating the equivalent refractive index of the metamaterial according to the calculated S parameter.
In summary, the negative refractive index metamaterial structure based on dynamic regulation of equivalent energy levels provided by the invention can dynamically regulate the equivalent energy levels of the THz negative refractive index metamaterial in a light intensity, temperature, voltage or pressure change mode, so as to regulate the transmittance and the negative refractive index of the metamaterial. The metamaterial has the advantages of simple structure, good dynamic tuning and tuning performance and the like, and the metal structure, the hole structure and the semiconductor material can be set according to specific application requirements, so that the metamaterial has flexibility.
The technical principle and the concrete examples applied to the invention are described above, and the equivalent or equivalent design and modification made according to the idea of the invention should be included in the protection scope of the invention.
Claims (4)
1. A terahertz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy levels is characterized in that: a five-layer metamaterial resonance unit structure is adopted, which sequentially comprises the following steps from the bottom layer to the top layer: the first layer is a semiconductor hole structure which is an annular hole, the second layer is a metal resonance structure which is an annular resonance ring, the third layer is a dielectric layer, the fourth layer is a metal resonance structure which is the same as the second layer, and the fifth layer is a semiconductor hole structure which is the same as the first layer; the metamaterial resonance unit structure is equivalent to atoms, and different resonance modes are equivalent to different equivalent energy levels of the atoms; the conductivity of the semiconductor material is changed by external excitation, and thus the equivalent energy level of the cell structure is changed, namely: when the metamaterial has no external excitation, the metamaterial can be equivalent to two equivalent energy levels; when the metamaterial is subjected to an external excitation source, the metamaterial can be equivalent to four equivalent energy levels, and therefore the terahertz broadband negative refractive index can be regulated and controlled.
2. The structure of claim 1, wherein the dielectric layer is equivalent to a nucleus and the resonant structure is equivalent to free electrons at different energy levels.
3. The structure of claim 1, wherein the equivalent level is associated with an external stimulus, i.e., the equivalent level of the metamaterial is influenced by the conductivity of the semiconductor material, which is influenced by the external stimulus, and the equivalent level of the metamaterial can be dynamically controlled by electrical control, temperature control, optical control, or voltage control.
4. The terahertz broadband negative refractive index metamaterial structure based on dynamic regulation and control of equivalent energy levels as claimed in claim 1, wherein the designed metamaterial semiconductor hole structure enables resonance of the metal resonance structure to be gradually replaced by resonance of the semiconductor resonance structure when being excited by outside until the resonance is completely replaced.
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