CN109246575A - A kind of preparation method of the progressive acoustic impedance matching layer of high frequency - Google Patents
A kind of preparation method of the progressive acoustic impedance matching layer of high frequency Download PDFInfo
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- CN109246575A CN109246575A CN201810907838.7A CN201810907838A CN109246575A CN 109246575 A CN109246575 A CN 109246575A CN 201810907838 A CN201810907838 A CN 201810907838A CN 109246575 A CN109246575 A CN 109246575A
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- progressive
- acoustic impedance
- photoresist
- mask plate
- high frequency
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- 230000000750 progressive effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000000295 complement effect Effects 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 41
- 239000000843 powder Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/001—Moulding aspects of diaphragm or surround
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention discloses a kind of preparation methods of the progressive acoustic impedance matching layer of high frequency, include the following steps: S1: using the mask plate of complementary structure, using two-sided canted exposure method, precisely aligning exposure by litho machine, obtain photoresist progressive structure；S2: matching materials is filled in the photoresist progressive structure, forms progressive acoustic impedance matching layer.The preparation method of the progressive acoustic impedance matching layer of high frequency disclosed by the invention realizes the acoustical match material of micron-scale precision, the acoustical match that can be used for during high frequency ultrasound, and it is high to prepare precision.
Description
Technical field
The present invention relates to a kind of preparation methods of the progressive acoustic impedance matching layer of high frequency.
Background technique
Ultrasonic transducer is a kind of device for being able to achieve electric signal and acoustical signal is mutually converted because it is with piezoelectric effect,
It is the acoustical device of core the most in ultrasonic system.
Most of Commercial ultrasound energy converter uses single layer, bilayer or multilayer matching layer at present, wherein single layer matching and bilayer
Matching cannot fully achieve the acoustic impedance match between piezoelectric layer and detected object, multi-layer Matched since the matching number of plies is limited
Although layered scheme can significantly improvement sound can be to the efficiency of transmission of detected object, with the increase of the matching number of plies, phase
The bonding number of plies answered also successively increases, this undoubtedly will increase probe manufacturing process difficulty, uncertainty and its complexity.It is same with this
When, multiple reflections of the ultrasonic wave in adhesive layer can enhance therewith, further decrease the overall performance of ultrasonic transducer.If
Acoustic impedance with layer is not layer-by-layer variation but gradual change changes, i.e., the size of gradual change matching acoustic impedance is by the gradual change of piezoelectric layer side
It crosses to contact layer side, can solve that acoustic energy transmissions efficiency and manufacture craft in multi-layer Matched scheme can't eat one's cake and have it asks
Topic.
Acoustic impedance match traditionally is carried out with quarter-wave method, this method can only be realized in centre frequency attachment
Best match, impedance progressive layer then can realize acoustic impedance match in broader frequency range.
Also occur acoustic impedance gradual change type ultrasonic transducer on the market at present, but has following defects that
The Chinese patent of Patent No. CN200810038902 proposes a kind of progressive acoustic impedance preparation method, this method
It cannot achieve the accurate control progressive to acoustic impedance.
The Chinese patent of Patent No. CN200820151708.7 discloses a kind of ultrasonic transduction of acoustic impedance consecutive variations
Device, it is main using a variety of acoustical material particles identical by partial size, specific gravity is different and polymer coupler is mixing cured forms,
Under the action of gravity, particle can form acoustic impedance and continuously become according to specific gravity size successively longitudinal arrangement from large to small after solidification
The matching layer of change, the program needs various powders, and powder specific gravity needs consecutive variations, and cost of manufacture is high, and difficulty is big.
In the Chinese patent of Patent No. CN201310296746.7, acoustic impedance gradual change is manufactured using gradient temperature solidification method
Matching layer, specific implementation are as follows: setting multistage solidification temperature makes the viscosity of resin by thick thinning, and fills material in the process
Material is differently formed different sedimentaries according to density, and toward floating, relatively denser powder sinks the small powder of relative density,
So that the powder of internal different densities forms the matching layer of acoustic impedance gradual change, but its complex manufacturing process along longitudinal direction, need a variety of
The powder and setting multistage solidification temperature of different specific weight, the control of this method temperature is stringent, and curing time is longer.
Summary of the invention
In view of the shortcomings of the prior art, the object of the present invention is to provide a kind of preparation sides of the progressive acoustic impedance matching layer of high frequency
Method realizes the acoustical match material of micron-scale precision, the acoustical match that can be used for during high frequency ultrasound, and prepares precision
It is high.
To achieve the above object, the present invention provides a kind of preparation methods of the progressive acoustic impedance matching layer of high frequency, including such as
Lower step:
S1: using the mask plate of complementary structure, using two-sided canted exposure method, exposure is precisely aligned by litho machine, is obtained
To photoresist progressive structure；
S2: matching materials is filled in the photoresist progressive structure, forms progressive acoustic impedance matching layer.
Compared with prior art, the preparation method of the progressive acoustic impedance matching layer of high frequency disclosed by the invention, realizes micro-
The acoustical match material of rice dimensional accuracy, the acoustical match that can be used for during high frequency ultrasound, and it is high to prepare precision.
Another specific embodiment according to the present invention, the mask plate of the complementary structure include upper mask plate and lower exposure mask
Plate；The upper mask plate is rectangle comprising light transmission group and opaque group, the quadrangle of the upper mask plate are opaque group, institute
It states light transmission group and the opaque group of interval is arranged；The lower mask plate is rectangle comprising light transmission group and opaque group, it is described
The quadrangle of lower mask plate is light transmission group, and the light transmission group and the opaque group of interval are arranged.
Another specific embodiment according to the present invention, the matching materials include organosilicon.
Another specific embodiment according to the present invention, the step S1 further comprises step S11-S15:
S11: the splash-proofing sputtering metal layer on quartz wafer；
S12: mask plate is made a plate to the metal layer in use；
S13: the spin coating photoresist on the metal layer through the upper mask plate plate-making obtains photoresist layer；
S14: the quartz wafer through gluing is exposed processing；
S15: develop the photoresist layer, obtains photoresist progressive structure.
Another specific embodiment according to the present invention, the step S14 further comprises step S141-S142:
S141: from the ultraviolet canted exposure in quartz wafer bottom；
S142: the lower mask plate is used, from vertical exposure above the photoresist layer.
Another specific embodiment according to the present invention, the step S2 further comprises step S21-S22:
S21: the matching materials is slowly injected into the photoresist progressive structure, and is vacuumized and made the matching materials
It is fully infiltrated into the photoresist progressive structure, obtains matching materials progressive structure；
S22: after matching materials solidification, by the matching materials progressive structure from the photoresist progressive structure
Removing.
Another specific embodiment according to the present invention further comprises step S23 after the step S22:
Supplementary material is injected in the matching materials progressive structure, forms progressive acoustic impedance micro-structure.
Another specific embodiment according to the present invention, the photoresist are SU-8 photoresist.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method for the progressive acoustic impedance matching layer of high frequency that embodiment 1 provides；
Fig. 2 is the flow chart of step S1 in the preparation method for the progressive acoustic impedance matching layer of high frequency that embodiment 1 provides；
Fig. 3 is the flow chart of step S2 in the preparation method for the progressive acoustic impedance matching layer of high frequency that embodiment 1 provides.
Specific embodiment
Embodiment 1
It is the flow chart of the preparation method of the progressive acoustic impedance matching layer of high frequency provided in this embodiment referring to Fig. 1.This method
Including step S1-S2:
S1: using the mask plate of complementary structure, using two-sided canted exposure method, exposure is precisely aligned by litho machine, is obtained
To photoresist progressive structure.
The step is for obtaining photoresist progressive structure.
Specifically, in this step, the mask plate of complementary structure includes upper mask plate and lower mask plate；Upper mask plate is square
Shape comprising light transmission group and opaque group, the quadrangle of upper mask plate are opaque group, and light transmission group is arranged with opaque group of interval；
Lower mask plate is rectangle comprising light transmission group and opaque group, the quadrangle of lower mask plate are light transmission group, light transmission group with opaque group
Interval setting.Upper mask plate and lower mask plate are that complementary structure looks like are as follows: in the light transmission group and lower mask plate of upper mask plate
Opaque group is correspondingly arranged, and opaque group in upper mask plate is correspondingly arranged with the light transmission group in lower mask plate.
Fig. 2 is the flow chart of step S1 in the preparation method of the progressive acoustic impedance matching layer of high frequency provided in this embodiment；Step
Rapid S1 further comprises step S11-S15:
S11: the splash-proofing sputtering metal layer on quartz wafer.
The step forms metal layer for sputtering.
S12: mask plate is made a plate to metal layer in use.
The step is used to carry out exposure mask plate-making to metal layer using upper mask plate.
S13: the spin coating photoresist on the metal layer made a plate through upper mask plate obtains photoresist layer.
The step is used for spin coating photoresist, obtains photoresist layer.In the present embodiment, photoresist uses SU-8 photoresist.
S14: the quartz wafer through gluing is exposed processing.
The step is for being exposed processing, and further, which includes S141-S142:
S141: from the ultraviolet canted exposure in quartz wafer bottom；
S142: lower mask plate, the vertical exposure above photoresist layer are used.
S15: lithographic glue-line obtains photoresist progressive structure.
The step is used for development treatment, obtains photoresist progressive structure.
S2: filling matching materials in photoresist progressive structure, forms progressive acoustic impedance matching layer.
The step forms progressive acoustic impedance matching layer for filling.
Fig. 3 is the flow chart of step S2 in the preparation method of the progressive acoustic impedance matching layer of high frequency provided in this embodiment.Tool
Body, step S2 further comprises step S21-S23:
S21: matching materials is slowly injected into photoresist progressive structure, and vacuumizing makes matching materials be fully infiltrated into photoetching
In glue progressive structure, matching materials progressive structure is obtained；
S22: after material solidification to be matched, matching materials progressive structure is removed from photoresist progressive structure.
S23: injecting supplementary material in matching materials progressive structure, forms progressive acoustic impedance micro-structure.
In the present embodiment, matching materials includes PDMS, i.e. dimethyl silicone polymer, referred to as organosilicon.
The preparation method of the progressive acoustic impedance matching layer of high frequency disclosed in the present embodiment, realizes the sound of micron-scale precision
Matching materials, the acoustical match that can be used for during high frequency ultrasound are learned, and it is high to prepare precision.
Although the present invention is disclosed above in the preferred embodiment, it is not intended to limit the invention the range of implementation.Any
The those of ordinary skill in field is not departing from invention scope of the invention, improves when can make a little, i.e., all according to this hair
Bright done same improvement, should be the scope of the present invention and is covered.
Claims (8)
1. a kind of preparation method of the progressive acoustic impedance matching layer of high frequency, which comprises the steps of:
S1: using the mask plate of complementary structure, using two-sided canted exposure method, exposure is precisely aligned by litho machine, obtains light
Photoresist progressive structure；
S2: matching materials is filled in the photoresist progressive structure, forms progressive acoustic impedance matching layer.
2. the preparation method of the progressive acoustic impedance matching layer of high frequency as described in claim 1, which is characterized in that the complementary structure
Mask plate include upper mask plate and lower mask plate；The upper mask plate is rectangle comprising light transmission group and opaque group, it is described
The quadrangle of upper mask plate is opaque group, and the light transmission group and the opaque group of interval are arranged；The lower mask plate is rectangle,
It includes light transmission group and opaque group, and the quadrangle of the lower mask plate is light transmission group, the light transmission group and it is opaque group described between
Every setting.
3. the preparation method of the progressive acoustic impedance matching layer of high frequency as described in claim 1, which is characterized in that the matching materials
Including organosilicon.
4. the preparation method of the progressive acoustic impedance matching layer of high frequency as claimed in claim 2, which is characterized in that the step S1 into
One step includes step S11-S15:
S11: the splash-proofing sputtering metal layer on quartz wafer；
S12: mask plate is made a plate to the metal layer in use；
S13: the spin coating photoresist on the metal layer through the upper mask plate plate-making obtains photoresist layer；
S14: the quartz wafer through gluing is exposed processing；
S15: develop the photoresist layer, obtains photoresist progressive structure.
5. the preparation method of the progressive acoustic impedance matching layer of high frequency as claimed in claim 4, which is characterized in that the step S14
Further comprise step S141-S142:
S141: from the ultraviolet canted exposure in quartz wafer bottom；
S142: the lower mask plate is used, from vertical exposure above the photoresist layer.
6. the preparation method of the progressive acoustic impedance matching layer of high frequency as claimed in claim 4, which is characterized in that the step S2 into
One step includes step S21-S22:
S21: the matching materials is slowly injected into the photoresist progressive structure, and vacuumizing keeps the matching materials abundant
It penetrates into the photoresist progressive structure, obtains matching materials progressive structure；
S22: after matching materials solidification, the matching materials progressive structure is shelled from the photoresist progressive structure
From.
7. the preparation method of the progressive acoustic impedance matching layer of high frequency as claimed in claim 6, which is characterized in that in the step
Further comprise step S23 after S22:
Supplementary material is injected in the matching materials progressive structure, forms progressive acoustic impedance micro-structure.
8. the preparation method of the progressive acoustic impedance matching layer of high frequency as claimed in claim 4, which is characterized in that the photoresist is
SU-8 photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810907838.7A CN109246575B (en) | 2018-08-09 | 2018-08-09 | Preparation method of high-frequency progressive acoustic impedance matching layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810907838.7A CN109246575B (en) | 2018-08-09 | 2018-08-09 | Preparation method of high-frequency progressive acoustic impedance matching layer |
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| Publication Number | Publication Date |
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| CN109246575A true CN109246575A (en) | 2019-01-18 |
| CN109246575B CN109246575B (en) | 2020-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810907838.7A Expired - Fee Related CN109246575B (en) | 2018-08-09 | 2018-08-09 | Preparation method of high-frequency progressive acoustic impedance matching layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111447535A (en) * | 2020-03-20 | 2020-07-24 | 中国科学院声学研究所 | Gradient-adjustable acoustic impedance matching layer |
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| CN1756955A (en) * | 2003-03-04 | 2006-04-05 | 茹瓦·皮尔斯·琼斯 | Apparatus and method with matched acoustic impedance |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111447535B (en) * | 2020-03-20 | 2021-02-09 | 中国科学院声学研究所 | Gradient-adjustable acoustic impedance matching layer |
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| CN109246575B (en) | 2020-10-16 |
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