CN107946393B - CdTe thin-film solar cell based on SnTe as back electrode buffer layer and preparation method thereof - Google Patents
CdTe thin-film solar cell based on SnTe as back electrode buffer layer and preparation method thereof Download PDFInfo
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- CN107946393B CN107946393B CN201711084201.4A CN201711084201A CN107946393B CN 107946393 B CN107946393 B CN 107946393B CN 201711084201 A CN201711084201 A CN 201711084201A CN 107946393 B CN107946393 B CN 107946393B
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- 229910005642 SnTe Inorganic materials 0.000 title claims abstract description 86
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 72
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 48
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 43
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 238000001704 evaporation Methods 0.000 claims description 27
- 230000008020 evaporation Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 17
- 238000005086 pumping Methods 0.000 claims description 16
- 238000002207 thermal evaporation Methods 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000011265 semifinished product Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000005092 sublimation method Methods 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000000861 blow drying Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 238000000224 chemical solution deposition Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 117
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VXAPDXVBDZRZKP-UHFFFAOYSA-N nitric acid phosphoric acid Chemical compound O[N+]([O-])=O.OP(O)(O)=O VXAPDXVBDZRZKP-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a CdTe solar cell based on SnTe as a back electrode buffer layer and a preparation method thereof, the CdTe thin film solar cell based on SnTe as the back electrode buffer layer grows a layer of SnTe buffer layer or ZnTe: a composite buffer layer composed of Cu and SnTe, wherein the SnTe film is P+And (4) molding. The SnTe thin film has very high carrier concentration, high hole mobility and extremely low resistivity, and a heterojunction energy band structure formed by the SnTe thin film and the CdTe is very beneficial to the transmission of holes, which is beneficial to reducing the potential barrier at the back electrode of the CdTe thin film solar cell.
Description
Technical Field
The invention relates to a CdTe solar cell based on SnTe as a back electrode buffer layer and a preparation method thereof.
Background
With the development of the 21 st century human society, the living standard is continuously improved, and the demand for energy is also continuously increased. However, the mainstream reserves of fossil energy are becoming smaller and smaller today. Meanwhile, the use of the fossil energy also causes environmental problems such as greenhouse effect, haze and the like, and threatens the sustainable development of the human society. Therefore, the development of sustainable pollution-free novel energy is the development direction of the current society. Among the various green energy sources, solar energy is the most ideal energy source due to its large storage capacity, wide distribution and long-term stability. Among them, the solar cell is a device that most directly uses solar energy, and the solar cell can directly convert light energy into electric energy by using a photovoltaic effect.
CdTe thin film solar cells are one of the few currently commercialized solar cells, and have the characteristics of high efficiency, low cost, and large-scale industrialization, thus implying great commercial value. The american photovoltaic corporation Firstsolar is a company producing CdTe solar modules, and although the module shipment is not the largest, the market values of eleven photovoltaic corporations listed in the united states in china with the highest possible shipment are added together and are inferior to those of Firstsolar. At present, only one of the Longyan energy technology companies, namely building material photoelectric material companies in the starting stage, is the enterprise capable of producing CdTe thin film solar cell modules in a large scale in China.
CdTe is a II-VI family direct band gap compound semiconductor, has a forbidden band width of about 1.45eV, and is exactly in an ideal absorption waveband of a solar spectrum. CdTe visible light absorption coefficient greater than 105cm-1Therefore, only 1-2 microns thick CdTe absorbing layer is needed to absorb 99% of the photons. CdTe also has stable chemical properties, excellent radiation resistance, good low-light performance and the like, so the CdTe is an ideal material for preparing the solar cell.
Nevertheless, the maximum efficiency of the CdTe Solar cell with small area currently recorded by Solar cell efficiency tables (version 49) is only 22.1%, which is a big gap from the theoretical maximum conversion efficiency of 28%. The main problems faced therein are: 1) CdTe is a high work function (about 5.5eV) P-type semiconductor material with which it is difficult for a metal to form a low barrier back contact; 2) the carriers of CdTe are low, typically at 1014cm-3Left and right. These factors all greatly limit the increase of the open-circuit voltage of the battery, and further limit the further increase of the conversion efficiency.
SnTe is a group IV-VI narrow bandgap semiconductor material with a bandgap width of about 0.18 eV. SnTe has excellent electrical properties-high carrier concentration, high hole mobility and very low resistivity. The Wuhuzhen topic group of the university of Zhejiang physical department owns MBE growth technology and has long been devoted to group II-VI and IV-VI semiconductor research work. Wuhui's topic group obtained CdTe/SnTe heterojunction structure by MBE growth technology, and obtained by XPS analysis that the valence band height of SnTe is 0.76eV higher than CdTe/SnTe heterojunction interface. This band structure is very advantageous for the movement of holes from CdTe to SnTe side. And SnTe is easy to form ohmic contact with metal. Therefore, a SnTe buffer layer is inserted between the CdTe and the metal at the back electrode of the CdTe thin film solar cell, so that the problem of excessively high back contact potential barrier between the CdTe and the metal due to excessively high work function of the CdTe can be effectively solved.
The structure based on the SnTe buffer layer is introduced into the back electrode of the CdTe thin-film solar cell, so that the defects in the existing CdTe thin-film solar cell preparation technology are overcome, and the cell can obtain higher open-circuit voltage and conversion efficiency.
Disclosure of Invention
The invention aims to provide a CdTe thin-film solar cell based on SnTe as a back electrode buffer layer and a preparation method thereof.
The invention is realized by the following technical scheme:
a CdTe thin-film solar cell based on SnTe as a back electrode buffer layer is characterized in that a layer of SnTe buffer layer or ZnTe: a composite buffer layer composed of Cu and SnTe, wherein the SnTe film is P+And (4) molding.
As a further improvement, the battery sequentially comprises a conductive glass layer, a high-resistance layer, a window layer, an absorption layer, a buffer layer and a back electrode metal layer from bottom to top.
1) Conductive glass layer
The conductive glass substrate is tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO) or aluminum-doped zinc oxide (AZO); the thickness of the glass substrate is about 3mm, and the thickness of the conductive layer on the glass substrate is about 500-600 nm;
2) window layer
The window layer is a cadmium sulfide layer with the thickness of 20-100 nm;
3) absorbing layer
The absorption layer is a cadmium telluride layer with the thickness of 3-6 μm;
4) buffer layer
The buffer layer is an SnTe buffer layer or ZnTe: a composite buffer layer of Cu/SnTe having a thickness of about 100 nm.
5) Back electrode metal layer
The back electrode metal layer is nickel (Ni) with a thickness of 100-200 nm.
As a further improvement, a high-resistance layer is arranged between the conductive glass layer and the window layer, and the high-resistance layer is zinc tin oxide, or zinc magnesium oxide; the thickness is 20-60 nm.
The invention also discloses a preparation method of the CdTe thin film solar cell based on SnTe as the back electrode buffer layer, the preparation method comprises the growth and treatment of each functional thin film layer of the cell and the growth of the SnTe based buffer layer, and the preparation method comprises the following specific steps:
1) preparing a conductive glass layer: cleaning the purchased glass containing the transparent conductive layer with a glass cleaning agent, absolute ethyl alcohol and pure water in sequence, and drying the glass with nitrogen;
2) preparation of the window layer: preparing a CdS layer by adopting a magnetron sputtering method, a chemical bath deposition method, a thermal evaporation method or a CVD method;
3) preparation of the absorbing layer: preparing a CdTe layer by adopting a close-range sublimation method, a magnetron sputtering method or a CVD method;
4) CdCl of absorption layer2And (3) treatment: adding CdCl2Uniformly spraying a thin layer on the surface of CdTe, and placing the CdTe in a diffusion annealing furnace for annealing treatment;
5) preparing a buffer layer: preparing a single-layer SnTe film buffer layer or ZnTe by a thermal evaporation method or a magnetron sputtering method: a Cu/SnTe composite buffer layer; ZnTe: the structure of the composite buffer layer consisting of Cu and SnTe is ZnTe: cu clings to the CdTe absorption layer, and the SnTe layer clings to the ZnTe: a Cu layer.
6) Preparing a back electrode metal layer: and preparing the Ni metal back electrode by adopting a thermal evaporation or magnetron sputtering method.
As a further improvement, when a high-resistance layer is arranged between the conductive glass layer and the window layer, the method of the high-resistance layer is as follows: the high-resistance layer is prepared by adopting a magnetron sputtering method, a thermal evaporation method or a CVD method.
As a further improvement, the specific preparation method when the buffer layer is a single-layer SnTe is as follows:
preparing CdTe film cell semi-finished product, sequentially including conductive glass layer, high-resistance layer, CdS window layer and CdTe absorption layer, and processing with CdCl2Processing;
B. adding CdCl2Washing and cleaning the film surface of the treated CdTe by pure water;
C. placing the cleaned CdTe film surface in mixed solution of nitric acid and phosphoric acid, soaking for 10 s, immediately removing, washing with pure water, and blow-drying with nitrogen gas, wherein the mixed solution ratio is HNO3:H3PO4:H2O＝0.5:70:29.5；
D. Placing the processed semi-finished product of the battery into a growth chamber of a thermal evaporation device, placing high-purity SnTe powder on an evaporation boat, and pumping the air pressure in the growth chamber to 10 DEG-4Starting to grow SnTe film under Pa, and regulating the input power of the power supply of the evaporation boat during growth to make the growth rate of the SnTe film be
Controlling the thickness of the SnTe thin film to be 100nm through film thickness monitoring equipment;
E. replacing with high-purity Ni powder evaporation boat, and pumping the gas pressure in the growth chamber to 10-4Depositing Ni metal electrode of 200nm on SnTe film at a deposition rate of below Pa
Left and right;
F. and taking out the battery with the SnTe and Ni deposited, putting the battery into an annealing furnace filled with nitrogen, setting the annealing temperature at 220 ℃, annealing for 35 minutes, taking out and cooling to room temperature.
As a further improvement, when the buffer layer is a buffer layer containing ZnTe: the specific preparation method for the Cu/SnTe composite buffer layer comprises the following steps:
preparing CdTe film cell semi-finished product, sequentially including conductive glass layer, high-resistance layer, CdS window layer and CdTe absorption layer, and processing with CdCl2Processing;
B. adding CdCl2Washing and cleaning the film surface of the treated CdTe by pure water;
C. placing the cleaned CdTe film surface in mixed solution of nitric acid and phosphoric acid, soaking for 10 s, immediately removing, washing with pure water, and blow-drying with nitrogen gas, wherein the mixed solution ratio is HNO3:H3PO4:H2O＝0.5:70:29.5；
D. Putting the treated semi-finished product of the battery into a growth chamber of a thermal evaporation device, putting high-purity ZnTe powder on an evaporation boat, and pumping the air pressure in the growth chamber to 10 DEG-4The ZnTe film starts to grow under Pa, and the input power of the power supply of the evaporation boat is adjusted during the growth to ensure that the growth rate of the ZnTe film is
Controlling the thickness of the ZnTe film to be 60nm through film thickness monitoring equipment;
E. replacing with high-purity Cu powder evaporation boat, and pumping the gas pressure in the growth chamber to 10-4Pa below, 5nm of Cu is deposited on the ZnTe film, and the deposition rate is
Left and right;
F. replacing with evaporation boat filled with high-purity SnTe powder, and pumping the gas pressure in the growth chamber to 10-4Below Pa, SnTe with the deposition rate of 60nm is deposited on the Cu film
Left and right;
G. replacing with high-purity Ni powder evaporation boat, and pumping the gas pressure in the growth chamber to 10-4Pa is belowDepositing 200nm Ni metal electrode on the SnTe film at the deposition rate of
Left and right;
H. and taking out the cell deposited with ZnTe, Cu, SnTe and Ni, putting the cell into an annealing furnace filled with nitrogen, setting the annealing temperature at 220 ℃, annealing for 35 minutes, taking out and cooling to room temperature.
The invention has the remarkable characteristics that:
1. the SnTe thin film has very high carrier concentration, high hole mobility and extremely low resistivity, and a heterojunction energy band structure (shown in figure 3) formed by the SnTe thin film and the CdTe greatly facilitates the transmission of holes, which is beneficial to reducing a potential barrier at the back electrode of the CdTe thin film solar cell.
2. The solar cell with the SnTe single-layer buffer layer can be matched with the conventional CuxTe, ZnTe: the cell with buffer layer made of Cu has a uniform efficiency level (see fig. 4, table 1), and the single layer SnTe thin film without Cu is beneficial for the long-term stability of the cell, which is the detrimental effect of Cu diffusion and accumulation of the preceding electrode.
Table 1 shows the performance parameters of CdTe thin film solar cells and conventional cells based on SnTe as the back electrode buffer layer;
3. ZnTe: the solar cell with the Cu/SnTe composite buffer layer considers that the interface of SnTe and CdTe possibly has more defects in the preparation process (see figure 1), and ZnTe: ZnTe in the Cu/SnTe composite buffer layer: the Cu film can ensure certain electrical properties, and simultaneously the cell reflective layer can play a role in passivation to reduce surface recombination, and the SnTe film layer can still play a role in reducing back potential barrier (see figure 3). Corresponding battery and conventional CuxTe, ZnTe: compared with the cell composed of the buffer layer composed of Cu, the open-circuit voltage is improved by nearly 40mV, and the efficiency is improved by about 1% (see figure 4, table 1).
4. The buffer layer structure containing the SnTe film is prepared by adopting a thermal evaporation method, is compatible with the production process of the CdTe film solar cell at present, and has low cost.
Note: conventional Cu in the drawingsxTe, ZnTe: the preparation of the cells composed of buffer layers composed of Cu was the same as the examples given later, and the buffer layers were all 100nm thick.
Drawings
FIG. 1 is a schematic structural diagram of a CdTe thin film solar cell based on SnTe as a back electrode buffer layer;
FIG. 2 is an SEM image of SnTe grown by thermal evaporation;
FIG. 3 is a schematic diagram of the band structure of a CdTe thin film solar cell based on SnTe as a back electrode buffer layer;
figure 4 is a schematic J-V curve of a CdTe thin film solar cell based on SnTe as back electrode buffer layer and a conventional cell under standard test conditions.
In fig. 1, 1 is a conductive glass layer, 2 is a high-resistance layer, 3 is a window layer, 4 is an absorption layer, 5 is a buffer layer, and 6 is a back electrode metal layer.
Detailed Description
The following detailed description of embodiments of the invention is made with reference to the accompanying drawings and examples:
example 1: CdTe thin-film solar cell with single-layer SnTe buffer layer 5
The cell structure of fig. 1 is employed.
Transparent conductive glass layer 1: the conductive glass is directly purchased, a fluorine-doped tin oxide conductive layer with the thickness of about 600nm is arranged on the conductive glass, and the conductive glass is sequentially washed by a glass cleaning agent, absolute ethyl alcohol and pure water and then dried by nitrogen.
Preparation of high-resistance layer 2 and window layer 3: adopting a magnetron sputtering method to continuously deposit 20nm of Zn in a low vacuum environment2SnO4And a 60nm CdS thin film.
Preparation of the absorbing layer 4: the close-range sublimation method is adopted, the substrate temperature is controlled at 600 ℃, the CdTe evaporation source temperature is controlled at 650 ℃, and nitrogen is introduced as protective gas. The deposited CdTe film layer has a thickness of about 4 microns.
CdCl of the absorber layer 42And (3) treatment: spraying CdCl with concentration of 5% on the grown CdTe film layer by using ultrasonic atomizer2The aqueous solution was thin-layered, and then it was placed in an annealing furnace filled with nitrogen gas at a set temperature of 400 ℃, annealed for 20 minutes, and taken out.
Preparation of buffer layer 5: adding CdCl2Putting the treated battery into solution with the proportion of HNO3:H3PO4:H2Soaking in mixed nitric acid-phosphoric acid solution with O being 0.5:70:29.5 for 10 s, immediately flushing with pure water, and blowing with nitrogen. Then the obtained product is put into a growth chamber of a thermal evaporation device, and high-purity SnTe powder is placed on an evaporation boat. Then pumping the air pressure in the growth chamber to 10-4Starting to grow SnTe film under Pa, and regulating the input power of the power supply of the evaporation boat during growth to make the growth rate of the SnTe film be
Left and right. The thickness of the SnTe thin film is controlled to be 100nm through the film thickness monitoring equipment. The morphology structure of SnTe can be seen in the SEM picture of fig. 2.
Preparation of the back electrode metal layer 6: replacing evaporation boat with SnTe, replacing evaporation boat with high purity Ni powder, pumping the pressure in growth chamber to below 10-4Pa, depositing Ni metal electrode of 200nm on SnTe film at deposition rate
Left and right.
And taking out the battery with the SnTe and Ni deposited, putting the battery into an annealing furnace filled with nitrogen, setting the annealing temperature at 220 ℃, annealing for 35 minutes, taking out and cooling to room temperature.
Example 2: ZnTe: CdTe thin-film solar cell with Cu/SnTe buffer layer 5
The cell structure of fig. 1 is employed.
Transparent conductive layer: the conductive glass is directly purchased, a fluorine-doped tin oxide conductive layer with the thickness of about 600nm is arranged on the conductive glass, and the conductive glass is sequentially washed by a glass cleaning agent, absolute ethyl alcohol and pure water and then dried by nitrogen.
Preparation of high-resistance layer 2 and window layer 3: adopting a magnetron sputtering method to continuously deposit 20nm of Zn in a low vacuum environment2SnO4And a 60nm CdS thin film.
Preparation of the absorbing layer 4: the close-range sublimation method is adopted, the substrate temperature is controlled at 600 ℃, the CdTe evaporation source temperature is controlled at 650 ℃, and nitrogen is introduced as protective gas. The deposited CdTe film layer has a thickness of about 4 microns.
CdCl of the absorber layer 42And (3) treatment: spraying CdCl with concentration of 5% on the grown CdTe film layer by using ultrasonic atomizer2The aqueous solution was thin-layered, and then it was placed in an annealing furnace filled with nitrogen gas at a set temperature of 400 ℃, annealed for 20 minutes, and taken out.
Preparation of buffer layer 5: adding CdCl2Putting the treated battery into solution with the proportion of HNO3:H3PO4:H2Soaking in mixed nitric acid-phosphoric acid solution with O being 0.5:70:29.5 for 10 s, immediately flushing with pure water, and blowing with nitrogen. Then the powder is put into a growth chamber of a thermal evaporation device, and high-purity ZnTe powder is put on an evaporation boat. Then pumping the air pressure in the growth chamber to 10-4Pa or less, growth of ZnTe thin film is started. During growth, the input power of the power supply of the evaporation boat is adjusted to ensure that the growth rate of the ZnTe film is
Left and right. And controlling the thickness of the ZnTe film to be 60nm by using film thickness monitoring equipment. Replacing the evaporation boat with ZnTe and the evaporation boat with high-purity Cu powder, and pumping the air pressure in the growth chamber to 10 deg.C-4Pa below, 5nm of Cu is deposited on the ZnTe film, and the deposition rate is
Left and right. Replacing the evaporation boat filled with Cu with the evaporation boat filled with high-purity SnTe powder, and pumping the air pressure in the growth chamber to 10-4Below Pa, SnTe with the deposition rate of 60nm is deposited on the Cu film
Left and right.
Preparation of the back electrode metal layer 6: replacing evaporation boat with SnTe and high-purity Ni powder, and pumping the vapor pressure in growth chamber to 10 deg.C-4Depositing Ni metal electrode of 200nm on SnTe film at a deposition rate of below Pa
Left and right.
And taking out the cell deposited with ZnTe, Cu, SnTe and Ni, putting the cell into an annealing furnace filled with nitrogen, setting the annealing temperature at 220 ℃, annealing for 35 minutes, taking out and cooling to room temperature.
The prepared cell of CdTe thin film solar cell based on SnTe as back electrode buffer layer 5, the cell without buffer layer 5 and the cell adopting the traditional buffer layer 5CuxTe and 100nm thick ZnTe: cu was tested for efficiency together (see fig. 4, table 1), with the test conditions being current international standard test conditions. The cell used for comparison was identical except for the difference in the buffer layer 5. Wherein CuxThe preparation of Te is formed by annealing reaction after thermally evaporating 5nmCu on NP after corrosion, and the preparation of single ZnTe: the Cu buffer layer 5 is formed by annealing reaction after depositing 100nmZnTe and 5 nmCu. The specific implementation method is similar to the process in the examples, and is not repeated.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the core technical features of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. Based on ZnTe: the CdTe thin-film solar cell with the Cu/SnTe composite buffer layer as the back electrode buffer layer is characterized in that the CdTe thin-film solar cell is characterized in that a buffer layer formed by growing a composite material of ZnTe: a composite buffer layer composed of Cu and SnTe, wherein the SnTe film is P+The solar cell comprises a conductive glass layer (1) and a high resistance layer from bottom to top in sequenceLayer (2), window layer (3), absorber layer (4), buffer layer (5), back electrode metal layer (6):
1) conductive glass layer (1)
The conductive glass layer (1) is glass containing a transparent conductive layer, and the conductive layer is tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO) or aluminum-doped zinc oxide (AZO); the thickness of the glass substrate is 3mm, and the thickness of the conductive layer on the glass substrate is 500-600 nm;
2) window layer (3)
The window layer (3) is a cadmium sulfide layer with the thickness of 20-100 nm;
3) absorbing layer (4)
The absorption layer (4) is a cadmium telluride layer with the thickness of 3-6 μm;
4) buffer layer (5)
The buffer layer (5) is ZnTe: the preparation method of the Cu/SnTe composite buffer layer comprises the following steps:
preparing a CdTe thin-film battery semi-finished product, namely sequentially preparing a conductive glass layer (1), a high-resistance layer (2), a CdS window layer (3) and a CdTe absorption layer (4), and carrying out CdCl on the conductive glass layer, the high-resistance layer, the CdS window layer and the CdTe absorption layer2Processing;
B. adding CdCl2Washing and cleaning the film surface of the treated CdTe by pure water;
C. placing the cleaned CdTe film surface in mixed solution of nitric acid and phosphoric acid, soaking for 10 s, immediately removing, washing with pure water, and blow-drying with nitrogen gas, wherein the mixed solution ratio is HNO3:H3PO4:H2O=0.5:70:29.5；
D. Putting the treated semi-finished product of the battery into a growth chamber of a thermal evaporation device, putting high-purity ZnTe powder on an evaporation boat, and pumping the air pressure in the growth chamber to 10 DEG-4The ZnTe film starts to grow under Pa, the input power of a power supply of the evaporation boat is adjusted during growth to ensure that the growth rate of the ZnTe film is 2 Å/S, and the thickness of the ZnTe film is controlled to be 60nm by film thickness monitoring equipment;
E. replacing with high-purity Cu powder evaporation boat, and pumping the gas pressure in the growth chamber to 10-4Pa or less, depositing 5nm Cu on ZnTe film, depositingThe rate was 0.1 Å/S;
F. replacing with evaporation boat filled with high-purity SnTe powder, and pumping the gas pressure in the growth chamber to 10-4Below Pa, depositing 60nm SnTe on the Cu film, wherein the deposition rate is 1 Å/S;
G. replacing with high-purity Ni powder evaporation boat, and pumping the gas pressure in the growth chamber to 10-4Depositing a 200nm Ni metal electrode on the SnTe film with the deposition rate of 2 Å/S below Pa;
H. taking out the cell deposited with ZnTe, Cu, SnTe and Ni, putting the cell into an annealing furnace filled with nitrogen, setting the annealing temperature at 220 ℃, annealing for 35 minutes, taking out and cooling to room temperature;
5) back electrode metal layer (6)
The back electrode metal layer is Ni with a thickness of 100-200 nm.
2. The ZnTe-based of claim 1: the CdTe thin-film solar cell with the Cu/SnTe composite buffer layer as the back electrode buffer layer is characterized in that a high-resistance layer (2) is arranged between the conductive glass layer (1) and the window layer (3), and the high-resistance layer (2) is zinc tin oxide, zinc oxide or zinc magnesium oxide; the thickness is 20-60 nm.
3. A ZnTe-based optical fiber as claimed in claim 1 or 2: the preparation method of the CdTe thin film solar cell with the Cu/SnTe composite buffer layer as the back electrode buffer layer is characterized by comprising the following steps of growth and treatment of each functional thin film layer of the cell and growth based on the composite buffer layer:
1) preparation of the conductive glass layer (1): cleaning the purchased glass containing the transparent conductive layer with a glass cleaning agent, absolute ethyl alcohol and pure water in sequence, and drying the glass with nitrogen;
2) preparation of the window layer (3): preparing the CdS layer by adopting a magnetron sputtering method, a chemical bath deposition method, a thermal evaporation method or a CVD method;
3) preparation of the absorbing layer (4): preparing a CdTe layer by adopting a close-range sublimation method, a magnetron sputtering method or a CVD method;
4) CdCl of the absorber layer (4)2And (3) treatment: adding CdCl2Uniformly spraying a thin layer on the surface of CdTe, and placing the CdTe in a diffusion annealing furnace for annealing treatment;
5) preparation of the buffer layer (5): preparing ZnTe by a thermal evaporation method or a magnetron sputtering method: a Cu/SnTe composite buffer layer;
6) preparing a back electrode metal layer (6): and preparing the Ni metal back electrode by adopting a thermal evaporation or magnetron sputtering method.
4. The ZnTe-based of claim 3: the preparation method of the CdTe thin film solar cell with the Cu/SnTe composite buffer layer as the back electrode buffer layer is characterized in that a high-resistance layer (2) is arranged between the conductive glass layer (1) and the window layer (3), and the method of the high-resistance layer (2) is as follows: the high-resistance layer (2) is prepared by adopting a magnetron sputtering method, a thermal evaporation method or a CVD method.
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