CN107895880B - Non-bonding or sintering side pumping wafer gain module structure - Google Patents
Non-bonding or sintering side pumping wafer gain module structure Download PDFInfo
- Publication number
- CN107895880B CN107895880B CN201711469787.6A CN201711469787A CN107895880B CN 107895880 B CN107895880 B CN 107895880B CN 201711469787 A CN201711469787 A CN 201711469787A CN 107895880 B CN107895880 B CN 107895880B
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- Prior art keywords
- wafer
- laser medium
- waveguide structure
- cooler
- conical waveguide
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- 238000005086 pumping Methods 0.000 title claims abstract description 28
- 238000005245 sintering Methods 0.000 title claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 18
- 238000002310 reflectometry Methods 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention provides a non-bonding or sintering side pumping wafer gain module structure, which comprises a cooler, a wafer laser medium, a conical waveguide structure and a laser diode array; the wafer laser medium and the conical waveguide structure are arranged on the cooler; the conical waveguide structure surrounds and is connected with the outer side face of the wafer laser medium; the outer side surface of the conical waveguide structure is provided with a laser diode array; the connection end of the conical waveguide structure and the laser diode array is an incident end; the connecting end of the conical waveguide structure and the wafer laser medium is an emergent end; the caliber of the incident end of the conical waveguide structure is larger than that of the emergent end. The scheme can greatly improve the coupling efficiency of the circular laser medium side pump, and eliminates the technical problem that the circular laser medium traditional side pump needs to bond or sinter the tapered waveguide. Meanwhile, the waveguide has good homogenizing effect, improves pumping uniformity and reduces optical distortion of the circular laser medium during heat loading.
Description
Technical Field
The invention relates to the field of high-power solid lasers, in particular to a non-bonding or sintering side pumping wafer gain module structure.
Background
With the continuous advancement of laser diode pumped solid state lasers to high technology applications, ever increasing demands are being placed on both the power level and the beam quality of the laser. The sheet gain medium is easy to realize one-dimensional high-efficiency cooling, is beneficial to controlling the thermal distortion in the laser, and is an effective way for developing a high-power and high-beam quality laser.
The sheet laser medium mainly has two configurations of a plate and a wafer, the output light spots of the plate-shaped gain medium are not symmetrical structures, and the optical parameters in the horizontal direction and the vertical direction are different, so that the complexity of developing and applying the plate laser is increased. The wafer laser medium obviously has no defects, the cooling structure of the wafer laser medium is the same, namely, the wafer laser medium is efficiently cooled through the end face, and the pumping mode is divided into an end pumping mode and a side pumping mode.
The end pumping mode is easy to realize, is a main stream pumping structure of the existing wafer laser, because the rear end face of the wafer laser medium is used for micro-channel cooling, only the front end face is reserved and is used for pumping and laser oscillation amplification, therefore, a pumping light path and a laser oscillation amplification light path are positioned in the same space region, optical components of the pumping light path and the laser oscillation amplification light path are very easy to interfere with each other, compact design is difficult to realize, so that two light path systems occupy huge space, light path adjustment is complex, and especially the problem that a high-power laser needs a plurality of laser mediums to be connected in series and interfere with each other is more remarkable, and the compactness, reliability and maintainability of the laser face great challenges.
The side pumping mode is to separate the pumping light path and the laser oscillation amplifying light path into different space areas, namely, the laser diode is changed into side pumping from the wafer laser medium, so that the defect of the end pumping mode is avoided, but the side surface of the wafer laser medium is very thin, the side surface is an arc surface subjected to roughening treatment, and high-efficiency pumping of the laser diode array is difficult to realize. The existing method is to bond or sinter the conical waveguide on the side surface of the wafer laser medium, and the conical waveguide guides the pump light emitted by the laser diode array into the wafer laser medium.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a non-bonding or sintering side pumping wafer gain module structure. Meanwhile, the waveguide has good homogenizing effect, improves pumping uniformity and reduces optical distortion of the circular laser medium during heat loading.
The scheme is realized by the following technical measures:
A non-bonding or sintering side pumping wafer gain module structure comprises a cooler, a wafer laser medium, a conical waveguide structure and a laser diode array; the wafer laser medium and the conical waveguide structure are arranged on the cooler; the conical waveguide structure surrounds and is connected with the outer side face of the wafer laser medium; the outer side surface of the conical waveguide structure is provided with a laser diode array; the connection end of the conical waveguide structure and the laser diode array is an incident end; the connecting end of the conical waveguide structure and the wafer laser medium is an emergent end; the caliber of the incident end of the conical waveguide structure is larger than that of the emergent end.
As a preferred embodiment of the present invention: the conical waveguide structure consists of an upper cover plate, a window lens and a cooler; the window lens is arranged at the outer edge of the cooler, and the height of the window lens is higher than the thickness of the wafer laser medium; the upper cover plate covers the area from the outer edge of the wafer laser medium to the top end of the window lens; matching liquid is injected into a cavity formed by the lower surface of the upper cover plate, the inner side of the window lens and the upper surface of the cooler; the laser diode array is arranged on the outer side surface of the window lens.
As a preferred embodiment of the present invention: the refractive index of the matching liquid is the same as that of the wafer laser medium.
As a preferred embodiment of the present invention: the outer edge of the upper cover plate is regular polygon; the shape of the outer edge of the cooler is matched with that of the upper cover plate; each side of the cooler is provided with a window lens; a group of laser diode arrays are arranged on the outer side face of each window lens.
As a preferred embodiment of the present invention: the ratio of the diameter to the thickness of the round laser medium is not less than 7:1.
As a preferred embodiment of the present invention: the lower surface of the upper cover plate and the upper surface of the cooler are high in reflection of pump light, and the reflectivity is more than or equal to 98%.
As a preferred embodiment of the present invention: the emergent light of the laser diode array sequentially passes through the window lens and the matching liquid and then enters the wafer laser medium.
The technical scheme has the beneficial effects that the matching liquid is used as the waveguide material of the side pumping of the circular laser medium in the scheme, so that a seamless solid-liquid interface is formed by closely attaching the matching liquid to the side of the circular laser medium, the refractive index of the matching liquid is the same as that of the circular laser medium, reflection and scattering loss do not exist between the solid-liquid interfaces, the coupling efficiency of the side pumping of the circular laser medium can be greatly improved, and the technical problem that the traditional side pumping of the circular laser medium needs to bond or sinter a conical waveguide is solved; the lower end face of the upper cover plate, the matching liquid and the upper end face of the cooler form a conical waveguide structure, and the large-caliber conical waveguide incident end can effectively improve pumping power. Meanwhile, the waveguide has good homogenizing effect, improves pumping uniformity and reduces optical distortion of the circular laser medium during heat loading.
It is seen that the present invention provides substantial features and improvements over the prior art, as well as significant advantages in its practice.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic top view of fig. 1.
In the figure, 1 is a diode array, 2 is an upper cover plate, 3 is a matching liquid, 4 is a window lens, 5 is a wafer laser medium, and 6 is a cooler.
Detailed Description
All of the features disclosed in this specification, or all of the steps in a method or process disclosed, may be combined in any combination, except for mutually exclusive features and/or steps.
Any feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.
The first embodiment is as follows:
in fig. 1, a non-bonding or sintering side pumping wafer gain module structure comprises a laser diode array 1, an upper cover plate 2, a matching liquid 3, a window lens 4, a round laser medium 5 and a cooler 6; the laser diode array 1 is arranged around the outer side of the upper cover plate 2, eight sets of laser diode arrays 1 are provided in the first embodiment, eight corresponding window lenses 4 are provided, a cooler 6 is arranged below the upper cover plate 2, and the included angle between the lower end surface of the upper cover plate 2 and the upper end surface of the cooler 6 is 9 degrees; the conical waveguide cavity formed by the upper cover plate 2, the window lens 4, the round laser medium 5 and the cooler 6 is filled with matching liquid 3; the light path structure is that the emergent light of the laser diode array 1 passes through the window lens 4, then is reflected for multiple times by the lower end face of the upper cover plate 2 and the upper end face of the cooler 6, and is led into the circular laser medium 5 through the matching liquid 3.
The luminous caliber of the laser diode array 1 is 11mm multiplied by 10mm, the wavelength is 805nm, and the number is eight sets.
The angle between the lower end face of the upper cover plate 2 and the upper end face of the cooler 6 is 9 degrees.
The caliber of the round laser medium 5 is 20mm, the thickness is 0.8mm, and the material is neodymium-doped yttrium lithium fluoride Nd: YLF.
The diameter of the inner circle of the upper cover plate 2 is 19mm, the periphery of the outer side is octagonal, the diameter of the octagonal circumcircle is 98mm, the material is stainless steel, the lower end face of the upper cover plate 2 is plated with a 805nm high-reflection film, and the reflectivity is more than 98%.
The material of the cooler 6 is copper, the upper end surface of the cooler 6 is plated with a 805nm high-reflection film, and the reflectivity is more than 98%.
The aperture of the window lens 4 is 17mm multiplied by 15mm, the material is optical glass, the aperture is plated with an anti-reflection film with 805nm, and the transmittance is more than 99%.
The matching liquid 3 is tetrachloroethylene C 2Cl4, and the refractive index of the matching liquid is similar to that of the round laser medium 5.
The invention is not limited to the specific embodiments described above. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification, as well as to any novel one, or any novel combination, of the steps of the method or process disclosed.
Claims (4)
1. A non-bonding or sintering side pumping wafer gain module structure is characterized in that: the device comprises a cooler, a wafer laser medium, a conical waveguide structure and a laser diode array; the wafer laser medium and the conical waveguide structure are arranged on the cooler; the conical waveguide structure surrounds and is connected to the outer side face of the wafer laser medium; a laser diode array is arranged on the outer side surface of the conical waveguide structure; the connection end of the conical waveguide structure and the laser diode array is an incident end; the connecting end of the conical waveguide structure connected with the wafer laser medium is an emergent end; the caliber of the incident end of the conical waveguide structure is larger than that of the emergent end;
the conical waveguide structure consists of an upper cover plate, a window lens and a cooler; the window lens is arranged at the outer edge of the cooler, and the height of the window lens is higher than the thickness of the wafer laser medium; the upper cover plate covers the area from the outer edge of the wafer laser medium to the top end of the window lens; matching liquid is injected into a cavity formed by the lower surface of the upper cover plate, the inner side of the window lens and the upper surface of the cooler; the laser diode array is arranged on the outer side surface of the window lens; the refractive index of the matching liquid is the same as that of the wafer laser medium; the ratio of the diameter to the thickness of the wafer laser medium is not less than 7:1.
2. The non-bonded or sintered side-pumped wafer gain module structure of claim 1, wherein: the shape of the outer edge of the upper cover plate is a regular polygon; the shape of the outer edge of the cooler is matched with that of the upper cover plate; each side of the cooler is provided with a window lens; a group of laser diode arrays are arranged on the outer side face of each window lens.
3. The non-bonded or sintered side-pumped wafer gain module structure of claim 2, wherein: the lower surface of the upper cover plate and the upper surface of the cooler are high in reflectivity to pump light, and the reflectivity is more than or equal to 98%.
4. A non-bonded or sintered side-pumped wafer gain module structure according to claim 3, characterized by: the emergent light of the laser diode array sequentially passes through the window lens and the matching liquid and then enters the wafer laser medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711469787.6A CN107895880B (en) | 2017-12-29 | 2017-12-29 | Non-bonding or sintering side pumping wafer gain module structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711469787.6A CN107895880B (en) | 2017-12-29 | 2017-12-29 | Non-bonding or sintering side pumping wafer gain module structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107895880A CN107895880A (en) | 2018-04-10 |
| CN107895880B true CN107895880B (en) | 2024-07-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711469787.6A Active CN107895880B (en) | 2017-12-29 | 2017-12-29 | Non-bonding or sintering side pumping wafer gain module structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN107895880B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208015067U (en) * | 2017-12-29 | 2018-10-26 | 中国工程物理研究院应用电子学研究所 | A kind of nonbonding or the side pumping disk gain module structure of sintering |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1395809A (en) * | 1972-09-06 | 1975-05-29 | Post Office | Optical communications systems |
| GB2439345A (en) * | 2006-06-23 | 2007-12-27 | Gsi Group Ltd | Annular tapered fibre coupler for cladding pumping of an optical fibre |
| EP2719035A1 (en) * | 2011-06-13 | 2014-04-16 | Lawrence Livermore National Security, LLC | Method and system for cryocooled laser amplifier |
| US8576885B2 (en) * | 2012-02-09 | 2013-11-05 | Princeton Optronics, Inc. | Optical pump for high power laser |
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2017
- 2017-12-29 CN CN201711469787.6A patent/CN107895880B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208015067U (en) * | 2017-12-29 | 2018-10-26 | 中国工程物理研究院应用电子学研究所 | A kind of nonbonding or the side pumping disk gain module structure of sintering |
Non-Patent Citations (1)
| Title |
|---|
| TAPERED WAVEGUIDE BY LIQUID FOR A COUPLER OF OPTICAL FIBERS TO MEMS DEVICES;Hisashi Terae等;IEEE;Abstract-EXPERIMENT AND RESULT * |
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| Publication number | Publication date |
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| CN107895880A (en) | 2018-04-10 |
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