CN107764425B - A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip - Google Patents
A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip Download PDFInfo
- Publication number
- CN107764425B CN107764425B CN201710886471.0A CN201710886471A CN107764425B CN 107764425 B CN107764425 B CN 107764425B CN 201710886471 A CN201710886471 A CN 201710886471A CN 107764425 B CN107764425 B CN 107764425B
- Authority
- CN
- China
- Prior art keywords
- pressure
- ceramic substrate
- temperature
- sintering
- sensor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000013535 sea water Substances 0.000 title abstract description 23
- 238000005245 sintering Methods 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000009966 trimming Methods 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims description 94
- 239000000919 ceramic Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 8
- 238000005553 drilling Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 11
- 230000009189 diving Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000007123 defense Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
技术领域：Technical field:
本发明涉及传感器制造技术领域，具体涉及一种海水温度和压力集成的片式传感器芯片的制造方法。The invention relates to the technical field of sensor manufacturing, in particular to a method for manufacturing a chip sensor chip integrating seawater temperature and pressure.
背景技术：Background technique:
海水温度、压力是海洋基本水文信息的两个重要参数，在海洋资源开发利用方面，这两个参数的精确掌握对于加快海洋开发技术研究，促进我国海洋开发事业的发展至关重要；在国防科技军事等方面，海水温度、压力等数据的获取，与舰船、潜艇的航行状况、战术上的攻击防御能力等密切相关。Seawater temperature and pressure are two important parameters of basic marine hydrological information. In the development and utilization of marine resources, the accurate grasp of these two parameters is crucial to speed up the research on marine development technology and promote the development of my country's marine development; in national defense science and technology In the military and other aspects, the acquisition of data such as seawater temperature and pressure is closely related to the navigation status of ships and submarines, and the tactical attack and defense capabilities.
此外，海水温度和压力的测量对研究海洋学、海洋环境监测、季节气候预测以及海洋渔业等都有十分重要的实用意义，是海洋水文气象观测及调查中不可或缺的技术指标；然而，现在国内的温度、压力传感器普遍存在体积大、结构布局不合理、自重大等问题，对测量结果的精确度有一定影响，且生产成本高，海水温度、压力传感器的微型化、芯片式、集成化发展仍处于起步阶段，批量化大规模生产仍然存在一些问题，尚不能满足各个应用领域的需求。In addition, the measurement of seawater temperature and pressure has very important practical significance for the study of oceanography, marine environment monitoring, seasonal climate prediction and marine fishery, etc., and is an indispensable technical indicator in marine hydrometeorological observation and investigation; however, now Domestic temperature and pressure sensors generally have problems such as large volume, unreasonable structure and layout, and self-healing, which have a certain impact on the accuracy of the measurement results, and the production cost is high. The miniaturization, chip type and integration of seawater temperature and pressure sensors The development is still in its infancy, and there are still some problems in mass production, which cannot meet the needs of various application fields.
发明内容：Invention content:
本发明本发明克服了上述现有技术的不足，提供了一种海水温度和压力集成的片式传感器芯片的制造方法；本发明中的传感器芯片结构紧凑，小型便携，灵敏精确，将温度和压力传感器集成在一起，能同时测量两个参数并降低生产成本，在海水中下潜速度快，测量效率高。The present invention overcomes the above-mentioned deficiencies of the prior art, and provides a method for manufacturing a chip sensor chip integrated with seawater temperature and pressure; the sensor chip in the present invention has a compact structure, is small and portable, is sensitive and accurate, and integrates temperature and pressure. The sensors are integrated together, which can measure two parameters at the same time and reduce the production cost, the diving speed in seawater is fast, and the measurement efficiency is high.
本发明的技术方案：Technical scheme of the present invention:
一种海水温度和压力集成的片式传感器芯片的制造方法的制造方法，包括以下步骤：A manufacturing method of a method for manufacturing a chip sensor chip integrated with seawater temperature and pressure, comprising the following steps:
a、化学清洗：对压力陶瓷基片、温度陶瓷基片、玻璃环和衬底陶瓷基片同时进行化学清洗；a. Chemical cleaning: chemically clean the pressure ceramic substrate, temperature ceramic substrate, glass ring and substrate ceramic substrate at the same time;
b、激光打孔：采用激光打孔技术，压力陶瓷基片和温度陶瓷基片上分别打两组微引线孔；b. Laser drilling: using laser drilling technology, two sets of micro-lead holes are punched on the pressure ceramic substrate and the temperature ceramic substrate respectively;
c、丝网印刷图形：采用厚膜丝网印刷工艺，在压力陶瓷基片的一个表面上印刷感压电极图形；在温度陶瓷基片的一个表面上印刷热敏电阻图形；c. Screen printing graphics: using the thick film screen printing process, the pressure-sensitive electrode graphics are printed on one surface of the pressure ceramic substrate; the thermistor graphics are printed on one surface of the temperature ceramic substrate;
d、烘干：用烘箱对丝网印刷图形后的压力陶瓷基片和温度陶瓷基片进行烘干；d. Drying: use an oven to dry the pressure ceramic substrate and the temperature ceramic substrate after the screen printing pattern;
e、印刷玻璃烧结料：烘干后，在感压电极图形外围用厚膜工艺印刷圆环形玻璃烧结料；e. Printing glass frit: After drying, the ring-shaped glass frit is printed on the periphery of the pressure-sensitive electrode pattern by a thick film process;
f、一次烧结：将玻璃环盖在印刷有玻璃烧结料的压力陶瓷基片上，用金属块压住，放入烧结炉中烧结；f. One-time sintering: cover the glass ring on the pressure ceramic substrate printed with the glass sintering material, press it with a metal block, and put it into the sintering furnace for sintering;
g、二次烧结：将四组内引线沾上铂导电浆料，分别放入压力陶瓷基片和温度陶瓷基片上的加工的微引线孔内，使铂导电浆料分别与感压电极图形和热敏电阻图形的引出端粘接，然后放入烧结炉中烧结；g. Secondary sintering: dip the four groups of inner leads with platinum conductive paste, and put them into the processed micro-lead holes on the pressure ceramic substrate and the temperature ceramic substrate respectively, so that the platinum conductive paste and the pressure-sensitive electrode pattern are respectively It is bonded to the leading end of the thermistor pattern, and then placed in a sintering furnace for sintering;
h、激光调阻：对温度陶瓷基片烧结后，通过激光调阻机对热敏电阻图形内的电阻进行激光调阻；h. Laser resistance adjustment: After sintering the temperature ceramic substrate, laser resistance adjustment is performed on the resistance in the thermistor pattern by a laser resistance adjustment machine;
i、三次烧结：在衬底陶瓷片两面都印刷圆环形玻璃烧结料，一面与玻璃环粘接，一面与印有热敏电阻图形的温度陶瓷基片粘接，用金属块压住，放入烧结炉中烧结；i. Three times of sintering: print the circular glass frit on both sides of the substrate ceramic sheet, bond one side with the glass ring, and bond with the temperature ceramic substrate printed with the thermistor pattern on the other side, press it with a metal block, put it sintered in a sintering furnace;
j、将铂内引线点焊到电子检测装置的金属引线柱上，制造出能够检测海水温度和压力的传感器。j. Spot welding the platinum inner lead to the metal lead post of the electronic detection device to manufacture a sensor that can detect the temperature and pressure of seawater.
进一步的，所述压力陶瓷基片、玻璃环、衬底陶瓷基片和所述温度陶瓷基片依次粘接且同轴心设置。Further, the pressure ceramic substrate, the glass ring, the substrate ceramic substrate and the temperature ceramic substrate are bonded in sequence and arranged coaxially.
进一步的，所述步骤a中选用的所述压力陶瓷基片、温度陶瓷基片和衬底陶瓷基片的厚度为0.25～2mm，所述玻璃环的厚度为0.2mm。Further, the thickness of the pressure ceramic substrate, the temperature ceramic substrate and the substrate ceramic substrate selected in the step a is 0.25-2 mm, and the thickness of the glass ring is 0.2 mm.
进一步的，所述步骤b中微引线孔的直径为0.1～0.15mm。Further, the diameter of the micro-lead hole in the step b is 0.1-0.15 mm.
进一步的，所述步骤d中的烘干温度为200～300℃。Further, the drying temperature in the step d is 200-300°C.
进一步的，所述步骤e中圆环形玻璃烧结料的厚度为5～15um。Further, in the step e, the thickness of the annular glass frit is 5-15um.
进一步的，所述步骤f中的烧结温度为300～400℃。Further, the sintering temperature in the step f is 300-400°C.
进一步的，所述步骤g中的烧结温度为300～400℃。Further, the sintering temperature in the step g is 300-400°C.
进一步的，所述步骤i中的烧结温度为400～500℃Further, the sintering temperature in the step i is 400～500℃
本发明的有益效果是：The beneficial effects of the present invention are:
本发明首先对各个陶瓷基片进行化学清洗，能够保证作为 芯片基本的陶瓷基片的自身的清洁度能够达到作为传感器芯片的要求，并通过激光打孔技术打孔，保证为引线孔的尺寸的直径的准确性；The invention firstly performs chemical cleaning on each ceramic substrate, which can ensure that the cleanliness of the ceramic substrate as the basic chip can meet the requirements of being used as a sensor chip, and the laser drilling technology is used to drill holes to ensure that the size of the lead holes is equal to the size of the lead holes. the accuracy of the diameter;
本发明压力陶瓷基片的一面印有感压电极，温度陶瓷基片的一面印有热敏电阻图形；压力陶瓷基片与衬底陶瓷片之间隔着玻璃环；形成感压空腔，当有压力作用时，电极引线通过穿透的微型引线孔接出到陶瓷片的外侧；用于敏感海水压力陶瓷片、玻璃环、衬底陶瓷片、温度陶瓷基片同轴心粘接在一起，保证传感器芯片部分的稳定的同时，最优化设置芯片部分的外形设计，保证传感器的体积小巧，下潜灵活，便于携带；Pressure-sensitive electrodes are printed on one side of the pressure ceramic substrate of the present invention, and a thermistor pattern is printed on one side of the temperature ceramic substrate; a glass ring is spaced between the pressure ceramic substrate and the substrate ceramic sheet; a pressure-sensitive cavity is formed, and when When there is pressure, the electrode leads are connected to the outer side of the ceramic sheet through the penetrating micro-lead hole; it is used for coaxial bonding of sensitive seawater pressure ceramic sheets, glass rings, substrate ceramic sheets, and temperature ceramic substrates. While ensuring the stability of the sensor chip part, the shape design of the chip part is optimized to ensure that the sensor is small in size, flexible in diving, and easy to carry;
本发明的封装采用玻璃浆料烧结法，在保证封装稳定的同时，使温度和压力检测集成在一起，同时测量两个参数，高效便捷，非常适合现场测量，并简化了加工步骤，缩短了传感器的加工周期；The package of the present invention adopts the glass paste sintering method, which integrates temperature and pressure detection and simultaneously measures two parameters while ensuring the stability of the package, which is efficient and convenient, very suitable for on-site measurement, and simplifies the processing steps and shortens the sensor time. processing cycle;
本发明将温度和压力检测集成，同时检测两个参数的同时，大大简化了加工步骤和传感器芯片的体积，片式的结构能够保证传感器在海水中下潜速度，测量效率大大提高。The invention integrates temperature and pressure detection, simultaneously detects two parameters, greatly simplifies the processing steps and the volume of the sensor chip, the chip structure can ensure the diving speed of the sensor in seawater, and the measurement efficiency is greatly improved.
附图说明：Description of drawings:
图1是本发明的工作流程图；Fig. 1 is the working flow chart of the present invention;
图2是本发明中海水温度和压力集成的片式传感器芯片的结构示意图；2 is a schematic structural diagram of a chip sensor chip integrated with seawater temperature and pressure in the present invention;
图3是本发明中压力陶瓷基片的结构示意图；Fig. 3 is the structural representation of the pressure ceramic substrate in the present invention;
图4是本发明中温度陶瓷基片的结构示意图；Fig. 4 is the structural representation of the temperature ceramic substrate in the present invention;
图5是本发明中海水温度和压力集成的片式传感器芯片的整体爆炸图；Fig. 5 is the overall exploded view of the chip sensor chip integrated with seawater temperature and pressure in the present invention;
图中：1-压力陶瓷基片；2-温度陶瓷基片；3-玻璃环；4-衬底陶瓷基片；5-感压电极图形；6-热敏电阻图形。In the figure: 1 - pressure ceramic substrate; 2 - temperature ceramic substrate; 3 - glass ring; 4 - substrate ceramic substrate; 5 - pressure sensitive electrode pattern; 6 - thermistor pattern.
具体实施方式：Detailed ways:
以下将结合附图对本发明进行详细说明。The present invention will be described in detail below with reference to the accompanying drawings.
结合图1至图5所示，本实施例公开的一种海水温度和压力集成的片式传感器芯片的制造方法的制造方法，包括以下步骤：With reference to FIG. 1 to FIG. 5 , a method for manufacturing a chip sensor chip with integrated seawater temperature and pressure disclosed in this embodiment includes the following steps:
a、化学清洗：对压力陶瓷基片1、温度陶瓷基片2、玻璃环和3衬底陶瓷基片4同时进行化学清洗，所述压力陶瓷基片、温度陶瓷基片和衬底陶瓷基片的厚度为0.25～2mm，所述玻璃环的厚度为0.2mm；a. Chemical cleaning: chemically clean the pressure ceramic substrate 1, the temperature ceramic substrate 2, the glass ring and the 3 substrate ceramic substrate 4 at the same time. The pressure ceramic substrate, the temperature ceramic substrate and the substrate ceramic substrate The thickness of the glass ring is 0.25-2mm, and the thickness of the glass ring is 0.2mm;
b、激光打孔：采用激光打孔技术，压力陶瓷基片和温度陶瓷基片上分别打两组微引线孔，微引线孔的直径为0.1～0.15mm；b. Laser drilling: using laser drilling technology, two sets of micro-lead holes are punched on the pressure ceramic substrate and the temperature ceramic substrate respectively, and the diameter of the micro-lead holes is 0.1-0.15mm;
c、丝网印刷图形：采用厚膜丝网印刷工艺，在压力陶瓷基片的一个表面上印刷感压电极图形5；在温度陶瓷基片的一个表面上印刷热敏电阻图形6；c. Screen printing graphics: using the thick film screen printing process, the pressure-sensitive electrode graphics 5 are printed on one surface of the pressure ceramic substrate; the thermistor graphics 6 are printed on one surface of the temperature ceramic substrate;
d、烘干：用烘箱对丝网印刷图形后的压力陶瓷基片和温度陶瓷基片进行烘干，烘干温度为200～300℃；d. Drying: use an oven to dry the pressure ceramic substrate and the temperature ceramic substrate after the screen printing pattern, and the drying temperature is 200-300 °C;
e、印刷玻璃烧结料：烘干后，在感压电极图形外围用厚膜工艺印刷厚度为5～15um圆环形玻璃烧结料；e. Printing glass frit: After drying, use a thick film process to print an annular glass frit with a thickness of 5-15um on the periphery of the pressure-sensitive electrode pattern;
f、一次烧结：将玻璃环盖在印刷有玻璃烧结料的压力陶瓷基片上，用金属块压住，放入烧结炉中烧结，烧结温度为300～400℃；f. One-time sintering: cover the glass ring on the pressure ceramic substrate printed with the glass sintering material, press it with a metal block, put it into a sintering furnace for sintering, and the sintering temperature is 300-400 ℃;
g、二次烧结：将四组内引线沾上铂导电浆料，分别放入压力陶瓷基片和温度陶瓷基片上的加工的微引线孔内，使铂导电浆料分别与感压电极图形和热敏电阻图形的引出端粘接，然后放入烧结炉中烧结，烧结温度为300～400℃；g. Secondary sintering: dip the four groups of inner leads with platinum conductive paste, and put them into the processed micro-lead holes on the pressure ceramic substrate and the temperature ceramic substrate respectively, so that the platinum conductive paste and the pressure-sensitive electrode pattern are respectively It is bonded with the leading end of the thermistor pattern, and then placed in a sintering furnace for sintering, and the sintering temperature is 300-400 °C;
h、激光调阻：对温度陶瓷基片烧结后，通过激光调阻机对热敏电阻图形内的电阻进行激光调阻；h. Laser resistance adjustment: After sintering the temperature ceramic substrate, laser resistance adjustment is performed on the resistance in the thermistor pattern by a laser resistance adjustment machine;
i、三次烧结：在衬底陶瓷片两面都印刷圆环形玻璃烧结料，一面与玻璃环粘接，一面与印有热敏电阻图形的温度陶瓷基片粘接，用金属块压住，放入烧结炉中烧结，烧结温度为400～500℃；i. Three times of sintering: print the circular glass frit on both sides of the substrate ceramic sheet, bond one side with the glass ring, and bond with the temperature ceramic substrate printed with the thermistor pattern on the other side, press it with a metal block, put it Sintering in the sintering furnace, the sintering temperature is 400 ~ 500 ℃;
j、将铂内引线点焊到电子检测装置的金属引线柱上，制造出能够检测海水温度和压力的传感器。j. Spot welding the platinum inner lead to the metal lead post of the electronic detection device to manufacture a sensor that can detect the temperature and pressure of seawater.
具体的，所述压力陶瓷基片、玻璃环、衬底陶瓷基片和所述温度陶瓷基片依次粘接且同轴心设置。Specifically, the pressure ceramic substrate, the glass ring, the substrate ceramic substrate and the temperature ceramic substrate are bonded in sequence and arranged coaxially.
具体的，其中感压电极图形为一种功能电极，由厚膜工艺印刷在压力陶瓷基片上，用于感受海水中压力变化产生的电容值变化信号；热敏电阻图形为由厚膜工艺印刷在陶瓷基片上的热敏电阻元件，用于感受海水中的温度的变化产生的电信号，感压电极图形中产生的电信号由内引线将信号传递给检测电路。Specifically, the pressure-sensing electrode pattern is a functional electrode, which is printed on the pressure ceramic substrate by a thick film process to sense the capacitance value change signal generated by the pressure change in seawater; the thermistor pattern is printed by a thick film process. The thermistor element on the ceramic substrate is used to sense the electrical signal generated by the temperature change in the seawater, and the electrical signal generated in the pressure-sensitive electrode pattern is transmitted to the detection circuit by the inner lead.
具体的，基于热敏电阻图形的工作原理，当外界温度变化时，热敏电阻图形的阻值就会发生变化，经引出线接入后续电子测量装置中的信号检测处理电路，通过研究与温度相敏感的物理量来实现海水温度检测。Specifically, based on the working principle of the thermistor pattern, when the external temperature changes, the resistance value of the thermistor pattern will change, and the lead wire is connected to the signal detection and processing circuit in the subsequent electronic measurement device. Phase-sensitive physical quantities to realize seawater temperature detection.
具体的，基于感压电极图形的工作原理，当金属膜片受到压力作用时发生变形，随着压力的增大膜片与衬底的距离逐渐缩小，距离发生变化，电容就会改变；经电极引出线接入后续电子测量装置中的信号检测处理电路，通过研究与压力相敏感的物理量来实现海水压力检测。Specifically, based on the working principle of the pressure-sensitive electrode pattern, when the metal diaphragm is subjected to pressure, it deforms. As the pressure increases, the distance between the diaphragm and the substrate gradually decreases, and the capacitance changes when the distance changes; The electrode lead wire is connected to the signal detection and processing circuit in the subsequent electronic measurement device, and the seawater pressure detection is realized by studying the physical quantity sensitive to pressure.
具体的，所述压力陶瓷基片、所述温度陶瓷基片和所述衬底陶瓷基片均为圆盘形陶瓷基片且尺寸相同；片式结构压力传感器垂直海平面装配，能够保证传感器在海水中快速下潜测量和快速提拉测量，解决了目前检测海水深度的压力传感器存在的快速下潜和提拉过程中产生的附加力影响，大大提高了海洋信息测量效率。Specifically, the pressure ceramic substrate, the temperature ceramic substrate and the substrate ceramic substrate are all disc-shaped ceramic substrates and have the same size; the chip structure pressure sensor is assembled vertically to the sea level, which can ensure that the sensor is in the The rapid dive measurement and rapid pull-up measurement in seawater can solve the additional force effect caused by the rapid dive and pull-up process of the current pressure sensor for detecting seawater depth, and greatly improve the efficiency of ocean information measurement.
以上实施例只是对本专利的示例性说明，并不限定它的保护范围，本领域技术人员还可以对其局部进行改变，只要没有超出本专利的精神实质，都在本专利的保护范围内。The above embodiments are only exemplary descriptions of this patent, and do not limit its protection scope. Those skilled in the art can also make partial changes to them, as long as they do not exceed the spirit and essence of this patent, they are all within the protection scope of this patent.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710886471.0A CN107764425B (en) | 2017-11-17 | 2017-11-17 | A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710886471.0A CN107764425B (en) | 2017-11-17 | 2017-11-17 | A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107764425A CN107764425A (en) | 2018-03-06 |
| CN107764425B true CN107764425B (en) | 2019-07-26 |
Family
ID=61267594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710886471.0A Active CN107764425B (en) | 2017-11-17 | 2017-11-17 | A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107764425B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2682080C1 (en) * | 2018-05-28 | 2019-03-14 | Федеральное государственное бюджетное научное учреждение "Институт природно-технических систем" (ИПТС) | Method for measuring temperature, pressure and density section in liquid |
| CN115096942A (en) * | 2022-05-10 | 2022-09-23 | 北京机械设备研究所 | Gas sensor chip preparation method and device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4262532A (en) * | 1979-09-13 | 1981-04-21 | General Electric Company | Pressure and temperature sensor |
| CN103177836A (en) * | 2013-03-16 | 2013-06-26 | 东莞市安培龙电子科技有限公司 | Thermistor manufactured by ceramic thin films and manufacturing method of thermistor |
| CN103187677A (en) * | 2011-12-31 | 2013-07-03 | 辽宁省轻工科学研究院 | Manufacturing method for zinc oxide base multilayer pressure-sensitive planar array for filtering connector |
| CN104198079A (en) * | 2014-07-30 | 2014-12-10 | 肇庆爱晟电子科技有限公司 | Quick response thermosensitive chip with high precision and reliability and manufacturing method thereof |
| WO2014205395A1 (en) * | 2013-06-20 | 2014-12-24 | The Regents Of The University Of Michigan | Microdischarge-based transducer |
| CN105439643A (en) * | 2015-11-16 | 2016-03-30 | 徐州中韵新材料科技有限公司 | Method for preparing copper/ceramic composite substrate on basis of low-melting-point glass powder |
| CN105606247A (en) * | 2015-12-31 | 2016-05-25 | 广东爱晟电子科技有限公司 | High-temperature-resistant quick-response thermistor and temperature sensor including the same |
| CN106233111A (en) * | 2014-04-23 | 2016-12-14 | 恩德莱斯和豪瑟尔两合公司 | There is the pressure transducer of ceramic platform |
| CN107328440A (en) * | 2017-07-17 | 2017-11-07 | 中国电子科技集团公司第四十九研究所 | Deeply integrated sensor of thermohaline based on thick-film technique technology and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060018361A1 (en) * | 2004-07-23 | 2006-01-26 | Hardwicke Canan U | Sensor and method for making same |
| KR101355397B1 (en) * | 2012-05-18 | 2014-01-28 | 가우스텍 주식회사 | Composition for sensor element, temperature sensor comprising the same and method for manufacturing thereof |
-
2017
- 2017-11-17 CN CN201710886471.0A patent/CN107764425B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4262532A (en) * | 1979-09-13 | 1981-04-21 | General Electric Company | Pressure and temperature sensor |
| CN103187677A (en) * | 2011-12-31 | 2013-07-03 | 辽宁省轻工科学研究院 | Manufacturing method for zinc oxide base multilayer pressure-sensitive planar array for filtering connector |
| CN103177836A (en) * | 2013-03-16 | 2013-06-26 | 东莞市安培龙电子科技有限公司 | Thermistor manufactured by ceramic thin films and manufacturing method of thermistor |
| WO2014205395A1 (en) * | 2013-06-20 | 2014-12-24 | The Regents Of The University Of Michigan | Microdischarge-based transducer |
| CN106233111A (en) * | 2014-04-23 | 2016-12-14 | 恩德莱斯和豪瑟尔两合公司 | There is the pressure transducer of ceramic platform |
| CN104198079A (en) * | 2014-07-30 | 2014-12-10 | 肇庆爱晟电子科技有限公司 | Quick response thermosensitive chip with high precision and reliability and manufacturing method thereof |
| CN105439643A (en) * | 2015-11-16 | 2016-03-30 | 徐州中韵新材料科技有限公司 | Method for preparing copper/ceramic composite substrate on basis of low-melting-point glass powder |
| CN105606247A (en) * | 2015-12-31 | 2016-05-25 | 广东爱晟电子科技有限公司 | High-temperature-resistant quick-response thermistor and temperature sensor including the same |
| CN107328440A (en) * | 2017-07-17 | 2017-11-07 | 中国电子科技集团公司第四十九研究所 | Deeply integrated sensor of thermohaline based on thick-film technique technology and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| A Flexible Bimodal Sensor Array for Simultaneous Sensing of Pressure and Temperature;Nguyen Thanh Tien 等;《Advanced Materials》;20140228(第26期);796–804 |
| 一种基于 MEMS 技术的冗余 Pt 温度传感器研究;姜国光 等;《传感器与微系统》;20120731;第31卷(第7期);23-25、29 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107764425A (en) | 2018-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106841325B (en) | A device for detecting exhaled gas based on a semiconductor gas sensor array | |
| US7259566B2 (en) | Micro sensor system for liquid conductivity, temperature and depth | |
| CN107589155A (en) | A kind of capacitance type sensor and preparation method thereof | |
| US9841392B2 (en) | Apparatus for sensing at least one parameter in water | |
| US9816962B2 (en) | Apparatus with a self-cleaning electrode for sensing at least one parameter in water | |
| CN106018516B (en) | A kind of compound slab pH transducer production methods of graphene modified | |
| CN107764425B (en) | A kind of manufacturing method of seawater temperature and pressure integrated chip sensor chip | |
| CN107202823A (en) | A kind of ink jet printing prepares the method and its application of microelectrode array sensor | |
| US9448200B2 (en) | Process for sensing at least one parameter in water | |
| CN209417074U (en) | A kind of piezoelectricity velocity sensor | |
| US9983158B2 (en) | Apparatus for sensing at least one parameter in water | |
| CN108663141A (en) | MEMS capacitive pressure sensor | |
| CN104132745A (en) | Micro-nano scale platinum resistor temperature sensor capable of fast measuring temperature | |
| CN107677312B (en) | A kind of chip seawater conductivity-temperature-depth system | |
| CN104535793B (en) | The fast sensor construction of hot blast based on Time delay measurement and wind speed and direction assay method | |
| CN205749380U (en) | The water content measuring probe of Based PC B and marginal effect of electric field | |
| CN107655614B (en) | A kind of ocean temperature and the integrated sheet type sensor chip of pressure | |
| TWI667472B (en) | Solution property sensor | |
| CN205301230U (en) | Chemistry is with electronics pH high speed detector | |
| WO2014045000A1 (en) | Apparatus with a sensor having strain compensation means for sensing at least one parameter in water the | |
| CN202771390U (en) | Sandwich type piezoelectric touch screen | |
| CN207516298U (en) | A kind of capacitance type sensor | |
| CN109900924A (en) | The preparation method of hot diaphragm type wind speed sensing unit, sensor and sensing unit based on HTCC technique | |
| CN210603176U (en) | Novel thick film strain gauge for sensor | |
| CN215374263U (en) | Temperature detection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190110 Address after: 201306 No. 5 Lane 218, Haiji Sixth Road, Nanhui New Town, Pudong New Area, Shanghai Applicant after: SHANGHAI FLAGSHIP MARINE TECHNOLOGY CO.,LTD. Applicant after: HARBIN ENGINEERING University Applicant after: HARBIN HANGSHI TECHNOLOGY DEVELOPMENT CO.,LTD. Applicant after: Beijing Aircraft Technology Development Co.,Ltd. Address before: 201306 No. 5 Lane 218, Haiji Sixth Road, Nanhui New Town, Pudong New Area, Shanghai Applicant before: SHANGHAI FLAGSHIP MARINE TECHNOLOGY CO.,LTD. Applicant before: HARBIN ENGINEERING University Applicant before: HARBIN HANGSHI TECHNOLOGY DEVELOPMENT CO.,LTD. |
|
| TA01 | Transfer of patent application right | ||
| CB02 | Change of applicant information |
Address after: 150001 Nantong Avenue, Harbin, Harbin, Heilongjiang Applicant after: HARBIN ENGINEERING University Applicant after: SHANGHAI FLAGSHIP MARINE TECHNOLOGY CO.,LTD. Applicant after: HARBIN HANGSHI TECHNOLOGY DEVELOPMENT CO.,LTD. Applicant after: Beijing Aircraft Technology Development Co.,Ltd. Address before: 201306 No. 5 Lane 218, Haiji Sixth Road, Nanhui New Town, Pudong New Area, Shanghai Applicant before: SHANGHAI FLAGSHIP MARINE TECHNOLOGY CO.,LTD. Applicant before: HARBIN ENGINEERING University Applicant before: HARBIN HANGSHI TECHNOLOGY DEVELOPMENT CO.,LTD. Applicant before: Beijing Aircraft Technology Development Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220708 Address after: 150006 southwest of Nancheng Seventh Avenue and Nancheng Second Road, Hanan industrial new town, Harbin, Heilongjiang Province Patentee after: HARBIN JINGFANG ELECTRIC EQUIPMENT TECHNOLOGY CO.,LTD. Address before: 150001 Nantong Avenue, Harbin, Harbin, Heilongjiang Patentee before: HARBIN ENGINEERING University Patentee before: SHANGHAI FLAGSHIP MARINE TECHNOLOGY CO.,LTD. Patentee before: HARBIN HANGSHI TECHNOLOGY DEVELOPMENT CO.,LTD. Patentee before: Beijing Aircraft Technology Development Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A manufacturing method for integrated chip sensor chips for seawater temperature and pressure Effective date of registration: 20231019 Granted publication date: 20190726 Pledgee: Harbin Kechuang Financing Guarantee Co.,Ltd. Pledgor: HARBIN JINGFANG ELECTRIC EQUIPMENT TECHNOLOGY CO.,LTD. Registration number: Y2023230000088 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190726 Pledgee: Harbin Kechuang Financing Guarantee Co.,Ltd. Pledgor: HARBIN JINGFANG ELECTRIC EQUIPMENT TECHNOLOGY CO.,LTD. Registration number: Y2023230000088 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of integrated chip sensor for seawater temperature and pressure Granted publication date: 20190726 Pledgee: Harbin Kechuang Financing Guarantee Co.,Ltd. Pledgor: HARBIN JINGFANG ELECTRIC EQUIPMENT TECHNOLOGY CO.,LTD. Registration number: Y2024230000069 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |