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CN107611275A - A kind of white luminous device, its display device and preparation method thereof - Google Patents

A kind of white luminous device, its display device and preparation method thereof Download PDF

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Publication number
CN107611275A
CN107611275A CN201710846283.5A CN201710846283A CN107611275A CN 107611275 A CN107611275 A CN 107611275A CN 201710846283 A CN201710846283 A CN 201710846283A CN 107611275 A CN107611275 A CN 107611275A
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luminescent layer
light emitting
blue light
luminescent
emitting material
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CN201710846283.5A
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CN107611275B (en
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刘营
王湘成
牛晶华
舒鹏
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Wuhan Tianma Microelectronics Co Ltd
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Shanghai Tianma AM OLED Co Ltd
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Abstract

The present invention relates to display technology field, more particularly to a kind of white luminous device, its display device and preparation method thereof.The white luminous device of the present invention includes first electrode, the second electrode relative to first electrode and the first luminescent layer and the second luminescent layer that are arranged between first electrode and second electrode, it is interior doped with the second blue light emitting material and green light luminescent material doped with the first blue light emitting material and red emitting material, the second luminescent layer in first luminescent layer;Two kinds of blue light emitting materials are the phosphor material of different luminescence bands, the transmitting main peak of second blue light emitting material and the absorption spectrum of green light luminescent material, which exist, to partly overlap, so as to reduce the loss of energy transmission, improve luminous efficiency, so obtain it is a kind of efficiently, stably, the high white luminous device of excitation.

Description

A kind of white luminous device, its display device and preparation method thereof
Technical field
The present invention relates to display technology field, more particularly to a kind of white luminous device, its display device and its making side Method.
Background technology
Organic electroluminescent LED (Organic Light Emitting Diode, OLED) technology was nearly 20 years in the past Between attracted extensive research notice and to achieve significant progress, cost is low, the response time is short, brightness is high, visual angle is wide, drives Dynamic voltage is low and can realize that the advantages such as Flexible Displays become the flat board full-color EL display technology in broad development space. It is gradually ripe with monochromatic OLED performance, white light organic electroluminescence diode (white Organic Light Emitting Diode, WOLED) as a kind of new solid state light emitter, show in illumination and flat board display backlight etc. Good application prospect, has attracted people more and more to pay attention to.Deepening continuously and develop, WOLED effect with research Rate and performance have obtained raising at full speed.The application of organic electromechanical phosphorescent material causes WOLED efficiency to realize a leap. Organic electrophosphorescenpolymer is verified can to utilize singlet and whole excitons of triplet state, and highest internal quantum efficiency is reachable in theory To 100%.Therefore, WOLED research center gradually turns to phosphorescence WOLED from fluorescence WOLED.
Statistical theory is generated according to random exciton, fluorescence OLED internal quantum efficiency is limited in less than 25%, therefore makes With using fluorescent material, efficiency is too low, higher using phosphorescent light-emitting materials, efficiency.The general red light-emitting in device is industrialized Material, Yellow light emitting material and yellow green-emitting luminescent material gloss phosphor material, blue light emitting material use fluorescent material.So this A little WOLED devices occur that blue light efficiency is low, and feux rouges, gold-tinted and yellowish green light efficiency are higher, in the case of lighting for a long time, blue light It is asynchronous with the life time decay of green-yellow light, cause colour cast to change over time.
The content of the invention
In view of this, the present invention provides a kind of white luminous device, the preparation method of white luminous device and organic hair Electro-optical display device.
In a first aspect, the embodiment of the present invention provides a kind of white luminous device, comprising:
First electrode, relative to the first electrode second electrode and be arranged at the first electrode and described second The first luminescent layer and the second luminescent layer between electrode, first luminescent layer are interior doped with the first blue light emitting material and feux rouges Luminescent material, second luminescent layer are interior doped with the second blue light emitting material and green light luminescent material;
First blue light emitting material and second blue light emitting material are blue emitting phosphor material, and described second is blue The absorption spectrum for launching main peak and the green light luminescent material of light luminescent material is in wave-length coverage in the range of 400~480nm In the presence of overlapping, the hair of the second blue light emitting material described in the wavelength ratio of the transmitting main peak of first blue light emitting material Penetrate at least big 4nm of wavelength of main peak.
Second aspect, the embodiment of the present invention also provide a kind of display device, include the white hair described in above-mentioned first aspect Optical device.
The third aspect, the embodiment of the present invention also provide a kind of preparation method of white luminous device, comprised the steps of:
First electrode layer is formed on substrate;
The first luminescent layer is formed in the first electrode layer, it is luminous that second is then formed on first luminescent layer Layer, finally forms the second electrode lay on second luminescent layer;Or
The second luminescent layer is formed in the first electrode layer, it is luminous that first is then formed on second luminescent layer Layer, finally forms the second electrode lay on first luminescent layer;
Doped with the first blue light emitting material and red emitting material in first luminescent layer, in second luminescent layer Doped with the second blue light emitting material and green light luminescent material, first blue light emitting material and the second blue light emitting material Material is blue emitting phosphor material, the absorption spectrum of the transmitting main peak and the green light luminescent material of second blue light emitting material Partly overlapped in maximum absorption band of the wave-length coverage in the range of 350~500nm, the transmitting master of first blue light emitting material At least big 4nm of wavelength of the transmitting main peak of second blue light emitting material described in the wavelength ratio at peak.
Technical scheme at least has following beneficial effect:
The white luminous device of the present invention is by using double emitting layers, and the luminescent material of each luminescent layer is using doping Form, wherein doped with the first blue light emitting material and red emitting material in the first luminescent layer, in the second luminescent layer doped with Second blue light emitting material and green light luminescent material, so that the first luminescent layer transmitting blue light and feux rouges, the transmitting of the second luminescent layer Blue light and green glow.Wherein, the first blue light emitting material and the second blue light emitting material are blue emitting phosphor material, and two kinds of blue lights are sent out Luminescent material be different luminescence bands material, the first blue light emitting material transmitting main peak the blue light emitting material of wavelength ratio second Transmitting main peak at least big 4nm of wavelength.And the transmitting main peak of the second blue light emitting material and the absorption of green light luminescent material Spectrum exists in wave-length coverage in the range of 350~500nm to overlap, and so as to reduce the loss of energy transmission, improves Luminous efficiency.So as to obtain a kind of color efficiently, stably, the high white luminous device of purity.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached Figure is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this area For those of ordinary skill, without having to pay creative labor, it can also be obtained according to these accompanying drawings other attached Figure.
Fig. 1 is a kind of structural representation of white luminous device provided in an embodiment of the present invention;
Fig. 2 is the structural representation of the white luminous device of another provided in an embodiment of the present invention;
Fig. 3 is the structural representation of the white luminous device of another provided in an embodiment of the present invention;
Fig. 4 is the structural representation of the white luminous device of another provided in an embodiment of the present invention;
Fig. 5 is the structural representation of the white luminous device of another provided in an embodiment of the present invention;
Fig. 6 is a kind of structural representation of display device provided in an embodiment of the present invention;
Fig. 7 is a kind of schematic flow sheet of white luminous device preparation method provided in an embodiment of the present invention;
Fig. 8 is the schematic flow sheet of another white luminous device preparation method provided in an embodiment of the present invention;
Fig. 9 is transmitting main peak and the absorption of green light luminescent material of the second blue light emitting material provided in an embodiment of the present invention Spectrum.
Wherein:
1- luminescent devices;
10- first electrodes;
The luminescent layers of 11- first;
The luminescent layers of 12- first;
13- hole transmission layers;
14- electron transfer layers;
15- hole injection layers
16- electron injecting layers;
17- hole blocking layers;
18- electronic barrier layers;
20- second electrodes;
The transmitting main peak of the blue light emitting materials of 100- second;
The absorption spectrum of 200- green light luminescent materials.
Embodiment
In order to be better understood from technical scheme, the embodiment of the present invention is retouched in detail below in conjunction with the accompanying drawings State.
It will be appreciated that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained all other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.
The term used in embodiments of the present invention is only merely for the purpose of description specific embodiment, and is not intended to be limiting The present invention." one kind ", " described " and "the" of singulative used in the embodiment of the present invention and appended claims It is also intended to including most forms, unless context clearly shows that other implications.
The embodiment of the present invention provides a kind of white luminous device, and its structural representation is as shown in Fig. 1~5.Wherein, such as Fig. 1 Shown in Fig. 2, white luminous device 1 includes:First electrode 10, relative to first electrode 10 second electrode 20 and be arranged at The first luminescent layer 11 and the second luminescent layer 12 between first electrode 10 and second electrode 20, the first luminescent layer 11 and second are luminous The position of layer 12 can exchange.
Wherein, doped with the first blue light emitting material and red emitting material in the first luminescent layer, so as to launch blue light And feux rouges, doped with the second blue light emitting material and green light luminescent material in the second luminescent layer, so as to launch blue light and green glow, It is compound with the blue light and feux rouges of the first luminescent layer, white light is produced, so as to obtain white light emitting device.In the embodiment of the present invention One luminescent layer and the second luminescent layer are joined directly together, can by the Mixed Circumscription of hole and electronics two luminescent layers light-emitting zone It is interior, and as the change of operating voltage, luminous zone will not vary widely, so as to ensure that it is good that white light emitting device has It is colour-stable.
In the embodiment of the present application, the first blue light emitting material, the second blue light emitting material are blue emitting phosphor material, phase For fluorescence luminescent material, the blue light material of the embodiment of the present invention selects phosphor material, overcomes blue-light fluorescent material The blue light efficiency of white luminous device is low, and the life time decay of blue light and green-yellow light is asynchronous, the defects of so as to cause colour cast, and It is greatly improved the luminous efficiency of white light emitting device.
In embodiments of the present invention, there is the visible spectrum in 600nm~700nm in the emission spectrum of red emitting material Peak wavelength, there is in the emission spectrum of green light luminescent material the peak wavelength in 500nm~600nm visible spectrum, it is blue There is the peak wavelength in 400nm~500nm visible spectrum in the emission spectrum of light luminescent material.It is further alternative, it is red There is the peak wavelength in 610nm~640nm visible spectrum, the hair of green light luminescent material in the emission spectrum of light luminescent material The peak wavelength having in 510nm~550nm visible spectrum is penetrated in spectrum, is had in the emission spectrum of blue light emitting material The peak wavelength of 400nm~480nm visible spectrum.
In the embodiment of the present invention, the hair of the blue light emitting material of wavelength ratio second of the transmitting main peak of the first blue light emitting material Penetrate at least big 4nm of wavelength of main peak.That is, the wavelength of the transmitting main peak of the second blue light emitting material is shorter, according to its visible spectrum In emission wavelength, be a kind of navy blue luminescent material;The wavelength of the transmitting main peak of first blue light emitting material is longer, according to it Emission wavelength in visible spectrum, it is a kind of sky blue luminescent material.This is because, the luminous efficiency of blue emitting phosphor material is relatively low, The life time decay of blue light and green-yellow light is asynchronous, the defects of so as to cause colour cast.This is directed to, the embodiment of the present invention is sent out in white Optical device has used two kinds of blue emitting phosphor materials simultaneously, the defects of so as to compensate for blue emitting phosphor material, makes white luminous device With good excitation.
For the difference of the luminescent spectrum of the apparent dark blue luminescent material of explanation and day blue light material, in the embodiment of the present invention In, the wavelength of the transmitting main peak of the second blue light emitting material is defined as λ2, by the transmitting main peak of the first blue light emitting material Wavelength is defined as λ1
λ2With λ1Need to meet:350nm≤λ1≤ X nm, X nm<λ2≤500nm;
X scope is 450nm≤X≤470nm.
In existing blue phosphor materials, meeting the blue phosphor materials of above-mentioned requirements has a lot, such as FIrpic, FCNIr、FCNIrpic、(HF)2Ir(pic)、(HF)2Ir(fptc)、(HFP)2Ir(pic)、(HFP)2Ir(mpic)、(HFP)2Ir (fptz) etc., when specifically chosen, it is only necessary to meet the blue light emitting of wavelength ratio second of the transmitting main peak of the first blue light emitting material At least big 4nm of wavelength of the transmitting main peak of material, those skilled in the art can be according to the transmitting of existing blue phosphor materials Peak wavelength is selected.
Because feux rouges phosphor material, green glow phosphor material have the current material that purity is high, luminous efficiency is high, therefore, it is The further luminous efficiency for improving white luminous device of the embodiment of the present invention, red illuminating material and green light luminescent material adopt Use phosphor material.
Further alternative, adoptable feux rouges phosphor material has Ir (pig)3、Ir(pig-F)2(acac)、Ir(m- pig)2(acac)、Ir(DBQ)2(acac)、Ir(MDQ)2(acac)、(nam)Ir(bbz)2CF3
In the embodiment of the present invention, in order to further reduce the loss of energy transmission, luminous efficiency, the embodiment of the present invention are improved White luminous device in the second blue light emitting material transmitting main peak and green light luminescent material absorption spectrum in wavelength model It is trapped among to exist in the range of 350nm~500nm and overlaps.The dipole-dipole sense that forster energy transfers pass through relatively long distance Mode is answered to transmit energy, if the emission spectrum of host emitter is overlapping with the absorption spectrum of guest emitter, and both transition It is allowed, then quick and non-luminous energy transfer will be produced between host and guest's illuminator, so as to reduces the damage of energy transmission Lose.
Further alternative, adoptable green glow phosphor material has Ir (ppy)3、Ir(nbi)2(acac)、Ir(pnbi)2 (acac)、Ir(cbi)2(acac)、Ir(fbi)2(acac)、Ir(tbi)2(acac)、Ir(pybi)2(acac)、Ir(tabi)2 (acac)。
To sum up, the white luminous device of the embodiment of the present invention, by above-mentioned condition to red illuminating material, green luminescence material The selection of material, navy blue luminescent material and sky blue luminescent material, so as to be prepared, a kind of excitation is high, luminous efficiency is high And stable white luminous device.
It is further alternative, in the first luminescent layer, the doping concentration of the first blue light emitting material for 3wt.%~ 10wt.%;The upper limit of the doping concentration of first blue light emitting material can be 10wt.%, 9wt.%, 8wt.%, 7.5wt.%, 7wt.%, 6wt.%, 5.5wt.%, the lower limit of the doping concentration of the first blue light emitting material can be 3wt.%, 3.5wt.%, 4wt.%, 4.5wt.%, 5wt.%;The doping concentration scope of first blue light emitting material can be made up of any number.If the The doping concentration of one blue light emitting material is too high, then deep blue light emitting is too strong, influences the illumination effect of feux rouges;If the first blue light The doping concentration of luminescent material is too low, then deep blue light emitting deficiency, and then influence the excitation of whole white light emitting device, even White light can not be formed.
Further alternative, in the first luminescent layer, doping concentration 0.5wt.%~5wt.% of red emitting material is red The upper limit of the doping concentration of light luminescent material can be 5wt.%, 4.5wt.%, 4wt.%, 3.5wt.%, 3wt.%, 2.5wt.%, 2wt.%, the lower limit of the doping concentration of red emitting material can be 0.5wt.%, 1wt.%, 1.5wt.%, 1.75wt.%;The doping concentration scope of red emitting material can be made up of any number.It is further alternative, red light-emitting material Doping concentration 0.5wt.%~3wt.% of material.If the doping concentration of red emitting material is too high, red light-emitting is too strong, such as The doping concentration of fruit red emitting material is too low, then red light-emitting deficiency, and then influences the excitation of whole white light emitting device, White light even can not be formed.
Further alternative, the thickness of the first luminescent layer is 15nm~20nm.If the thickness of the first luminescent layer is excessive, It is unfavorable for carrier transport, causes whole efficiency too low;If the thickness of the first luminescent layer is too small, it may appear that efficiency roll-off (roll off) phenomenon, efficiency occurs significantly to rise significantly to be declined afterwards.
It is further alternative, in the second luminescent layer, the doping concentration of the second blue light emitting material for 3wt.%~ 10wt.%;The upper limit of the doping concentration of second blue light emitting material can be 10wt.%, 9wt.%, 8wt.%, 7.5wt.%, 7wt.%, 6wt.%, 5.5wt.%, the lower limit of the doping concentration of the first blue light emitting material can be 3wt.%, 3.5wt.%, 4wt.%, 4.5wt.%, 5wt.%;The doping concentration scope of second blue light emitting material can be made up of any number.If the The doping concentration of two blue light emitting materials is too high, then day blue light emitting is too strong, influences the illumination effect of green glow;If the second blue light The doping concentration of luminescent material is too low, then the second blue light emitting material can only play a part of energy transfer, luminous deficiency itself, And then the excitation of whole white light emitting device is influenceed, or even white light can not be formed.
Further alternative, in the second luminescent layer, doping concentration 0.5wt.%~5wt.% of green light luminescent material is green The upper limit of the doping concentration of light luminescent material can be 5wt.%, 4.5wt.%, 4wt.%, 3.5wt.%, 3wt.%, 2.5wt.%, 2wt.%, the lower limit of the doping concentration of green light luminescent material can be 0.5wt.%, 1wt.%, 1.5wt.%, 1.75wt.%;The doping concentration scope of green light luminescent material can be made up of any number.It is further alternative, green luminescence material Doping concentration 0.5wt.%~3wt.% of material.If the doping concentration of green light luminescent material is too high, green luminescence is too strong, such as The doping concentration of fruit green light luminescent material is too low, then green luminescence deficiency, and then influences the excitation of whole white light emitting device, White light even can not be formed.
Further alternative, the thickness of the second luminescent layer is 15nm~20nm.If the thickness of the second luminescent layer is excessive, It is unfavorable for carrier transport, causes whole efficiency too low;If the thickness of the second luminescent layer is too small, efficiency roll-off occurs (roll off) phenomenon, efficiency occurs significantly to rise significantly to be declined afterwards.
In the white luminous device of the embodiment of the present invention, so that first electrode is anode, second electrode is negative electrode as an example, when white When color luminescent device includes anode, the first luminescent layer, the second luminescent layer and the negative electrode overlapped successively, the first luminescent layer is more Add close to anode, the material of main part that hole mobility is more than electron mobility can be selected in the first luminescent layer, advantageously in hole Transmission;The main body that electron mobility is more than hole mobility can be selected closer to negative electrode, the second luminescent layer in second luminescent layer Material, it is more beneficial for the transmission of electronics;So as to improve the efficiency of whole white luminous device and brightness.
When white luminous device includes anode, the second luminescent layer, the first luminescent layer and the negative electrode overlapped successively; The material of main part that hole mobility is more than electron mobility can be selected closer to anode, the second luminescent layer in second luminescent layer, more Added with the transmission beneficial to hole;Closer to negative electrode, the first luminescent layer can be selected electron mobility and is more than hole first luminescent layer The material of main part of mobility, it is more beneficial for the transmission of electronics;So as to improve the efficiency of whole device and brightness.
Meanwhile first the material of main part of luminescent layer and the second luminescent layer same material also can be selected.With main body material of the same race Expect as the material for exciting red, blue, green dopant, both can be with simplified assembly processing procedure, again can be with the stability of lifting assembly.If Using different material of main parts, used material of main part need to coordinate its electronics and cavity transmission ability, can just have component Good charge balance, so as to obtain optimal component efficiency.
Further alternative, the first luminescent layer, the material of main part of the second luminescent layer may be selected from:DPVBi、DPVBA、MADN Deng.
The organic layer of the white luminous device of the embodiment of the present invention in addition to the light emitting layer, in addition to one of the following or any Combination:Hole transmission layer, electron transfer layer, hole injection layer, electron injecting layer, electronic barrier layer and hole blocking layer;
When including hole transmission layer, hole transmission layer is between anode and luminescent layer;
When including electron transfer layer, electron transfer layer is between negative electrode and luminescent layer;
When including hole injection layer, hole injection layer is between anode and hole transmission layer;
When including electron injecting layer, electron injecting layer is between negative electrode and electron transfer layer;
When including electronic barrier layer, electronic barrier layer is between hole transmission layer and luminescent layer;
When including hole blocking layer, hole blocking layer is between electron transfer layer and luminescent layer.
Exemplary, as shown in figure 3, white luminous device 1 is six layer structure, include the first electrode overlapped successively 10th, hole transmission layer 13, the first luminescent layer 11, the second luminescent layer 12, electron transfer layer 14 and second electrode 20, first is luminous The position of the luminescent layer 12 of layer 11 and second can exchange.
Exemplary, as shown in figure 4, white luminous device 1 is eight Rotating fields, include the first electrode overlapped successively 10th, hole injection layer 15, hole transmission layer 13, the first luminescent layer 11, the second luminescent layer 12, electron transfer layer 14, electron injection The position of layer 16 and second electrode 20, the first luminescent layer 11 and the second luminescent layer 12 can exchange.
Exemplary, as shown in figure 5, white luminous device 1 is ten Rotating fields, include the first electrode overlapped successively 10th, hole injection layer 15, hole transmission layer 13, electronic barrier layer 18, the first luminescent layer 11, the second luminescent layer 12, hole barrier The position of layer 17, electron transfer layer 14, electron injecting layer 16 and second electrode 20, the first luminescent layer 11 and the second luminescent layer 12 It can exchange.
The second aspect of the embodiment of the present invention proposes a kind of display device, specifically as shown in fig. 6, including the embodiment of the present invention The white luminous device 1 of first aspect.Display device is specifically as follows such as touch-screen, mobile phone, tablet PC, notebook electricity Any electronic equipments with display function such as brain, electric paper book or television set.
In addition, white luminous device of the embodiment of the present invention is also used in lighting apparatus.
The third aspect of the embodiment of the present invention proposes a kind of preparation method of white luminous device, as shown in fig. 7, being this reality Apply the preparation method schematic flow sheet 100 of a white luminous device;Comprise the following steps:
Step S1:First electrode layer is formed on substrate;
Step S2:The first luminescent layer is formed in first electrode layer;
Step S3:The second luminescent layer is formed on the first luminescent layer,
Step S4:The second electrode lay is formed on the second luminescent layer.
Because the position of the first luminescent layer and the second luminescent layer can exchange, white luminous device of the embodiment of the present invention it is another A kind of preparation method, as shown in figure 8, the preparation method schematic flow sheet 200 for the present embodiment white luminous device;Including following Step:
Step S1:First electrode layer is formed on substrate;
Step S2:The second luminescent layer is formed in first electrode layer;
Step S3:The first luminescent layer is formed on the second luminescent layer;
Step S4:The second electrode lay is formed on the first luminescent layer.
Wherein, in the first luminescent layer doped with the first blue light emitting material and red emitting material, mixed in the second luminescent layer Miscellaneous have the second blue light emitting material and a green light luminescent material, the transmitting main peak of the second blue light emitting material and green light luminescent material Maximum absorption band of the absorption spectrum in wave-length coverage in the range of 350nm~500nm partly overlaps, the first blue light emitting material Launch at least big 4nm of wavelength of the transmitting main peak of the big blue light emitting material of wavelength ratio of main peak.
Wherein, the specific restriction of the first luminescent layer, the second luminescent layer, and the first blue light emitting material, the second blue light hair Luminescent material, red emitting material, green light luminescent material specific restriction as previously described.
The content of the embodiment of the present invention is further described below by concrete mode.In detailed description below In, exemplary optional following phosphorescent light-emitting materials, the Composition of contents of the embodiment of the present invention is not limited, art technology The content that personnel are introduced according to embodiments of the present invention, the phosphorescent light-emitting materials that other species can be selected are prepared with the present invention in fact Apply the white light emitting device of an effect.
First blue light emitting material:FIrpic;
Second blue light emitting material:Pt2SPy4
Red emitting material:Ir(piq)3
Green light luminescent material:Ir(ppy)3
Wherein, the transmitting main peak of the second blue light emitting material and the absorption spectrum of green light luminescent material are as shown in Figure 9.Scheming In 9, the transmitting main peak 100 of the second blue light emitting material is with the absorption spectrum 200 of green light luminescent material in 350nm~500nm models Maximum absorption band in enclosing partly overlaps.The preparation of OLED:Prepare TFT substrate;Anode is formed on the tft substrate;In sun Organic layer is formed on extremely;Form negative electrode.
Device architecture is respectively:
Luminescent device 1#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
In luminescent device 1#, ITO represents anode, the thickness of size Expressing this layer in bracket, for example, ITO (100nm) The thickness for representing anode is 100nm;
F4-TCNQ:NPB is hole injection layer, thickness 10nm;
TAPC is hole transmission layer, thickness 100nm;
FIrpic:Ir(piq)3:DPVBi is the first luminescent layer, thickness 15nm;FIrpic is the first blue light emitting material Material, doping 5wt.%;Ir(piq)3For red emitting material, doping 2wt.%:DPVBi is material of main part, content For 93wt.%;
Pt2SPy4:Ir(ppy)3:DPVBi is the second luminescent layer, thickness 15nm;Pt2SPy4For the second blue light emitting material Material, doping 5wt.%;Ir(ppy)3For green light luminescent material, doping 2wt.%:DPVBi is material of main part, content For 93wt.%;
Bphen is electron transfer layer, thickness 20nm;
LiF represents electron injecting layer, thickness 35nm;
Al represents negative pole, thickness 100nm.
Luminescent device 2#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/Pt2SPy4:Ir (ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/FIrpic:Ir(piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 3#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (10wt.%, 5wt.%, 85wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (10wt.%, 5wt.%, 85wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 4#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 3wt.%, 92wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 92wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 5#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (11wt.%, 2wt.%, 87wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 6#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (11wt.%, 2wt.%, 87wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 7#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (2wt.%, 2wt.%, 96wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 8#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (2wt.%, 2wt.%, 96wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 9#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 6wt.%, 89wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 10#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 0.4wt.%, 94.6wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 11#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 6wt.%, 89wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Luminescent device 12#:ITO(100nm)/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/FIrpic:Ir (piq)3:DPVBi (5wt.%, 2wt.%, 93wt.%, 15nm)/Pt2SPy4:Ir(ppy)3:DPVBi (5wt.%, 0.4wt.%, 94.6wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Comparative example:
ITO/F4-TCNQ:NPB (1wt.%, 10nm)/TAPC (100nm)/Ir (piq)3:DPVBi (2wt.%, 98wt.%, 15nm)/Pt2SPy4:DPVBi (5wt.%, 95wt.%, 15nm)/Ir (ppy)3:DPVBi (2wt.%, 98wt.%, 15nm)/Bphen (20nm)/LiF (35nm)/Ag (100nm).
Sample after the completion of preparation carries out performance test, is tested with Keithley 2365A digital nanovoltmeters according to test case And electric current of the organic photoelectric device manufactured in comparative example under different voltages, then had with electric current divided by light-emitting area The current density under different voltages of machine electrooptical device.Tested with Konicaminolta CS-2000 spectroradios luminance meter Brightness and radiant emittance of the organic photoelectric device made according to test case and comparative example under different voltages.According to having Current density and brightness of the machine electrooptical device under different voltages, obtain (the 0.1M/cm under same current density2) electric current effect Rate (Cd/A) and external quantum efficiency EQE.
Using the experimental data of comparative example 1 as 100%, luminescent device 1#~12# experimental data is calculated respectively.Surveyed Examination data are as shown in table 1 (wherein V represents to open bright voltage).
Table 1:
It can be seen from luminescent device 1#~4# experimental data, using two kinds of blue emitting phosphor materials respectively with red light-emitting material The luminous efficiency that material, green light luminescent material doping obtain white luminous device is obviously improved, and its life-span also obtain It is obviously improved.
It can be seen from luminescent device 5#~8# experimental data, if the first blue light emitting material or the second blue light emitting material The doping of material is excessive or too small, and luminous efficiency and life-span have certain downward trend, and white balance is also by certain Influence.
It can be seen from luminescent device 9#~12# experimental data, if the doping of red emitting material, green light luminescent material Measure excessive or too small, luminous efficiency and life-span have certain downward trend, and white balance is affected.
It is not for limiting claim, any this area skill although the application is disclosed as above with preferred embodiment Art personnel can make some possible variations and modification on the premise of the application design is not departed from, therefore the application Protection domain should be defined by the scope that the application claim is defined.

Claims (13)

  1. A kind of 1. white luminous device, it is characterised in that
    The white luminous device include first electrode, relative to the first electrode second electrode and be arranged at described the The first luminescent layer and the second luminescent layer between one electrode and the second electrode, first luminescent layer are interior blue doped with first Light luminescent material and red emitting material, second luminescent layer are interior doped with the second blue light emitting material and green luminescence material Material;
    First blue light emitting material and second blue light emitting material are blue emitting phosphor material, the second blue light hair The transmitting main peak of luminescent material is with the absorption spectrum of the green light luminescent material in wave-length coverage in 350nm~500nm scope internal memories Overlapping, the transmitting of the second blue light emitting material described in the wavelength ratio of the transmitting main peak of first blue light emitting material At least big 4nm of the wavelength of main peak.
  2. 2. white luminous device according to claim 1, it is characterised in that the red emitting material is phosphor material, The green light luminescent material is phosphor material.
  3. 3. white luminous device according to claim 1, it is characterised in that
    The wavelength of the transmitting main peak of second blue light emitting material is λ2, the transmitting main peak of first blue light emitting material Wavelength is λ1
    λ2With λ1Meet:350nm≤λ1≤ X nm, X nm<λ2≤500nm;
    X meets 450nm≤X≤470nm.
  4. 4. according to the white luminous device described in any one of claims 1 to 3, it is characterised in that in first luminescent layer, The doping concentration of first blue light emitting material is 3wt.%~10wt.%.
  5. 5. white luminous device according to claim 1, it is characterised in that in first luminescent layer, the feux rouges Doping concentration 0.5wt.%~5wt.% of luminescent material.
  6. 6. white luminous device according to claim 5, it is characterised in that in first luminescent layer, the feux rouges Doping concentration 0.5wt.%~3wt.% of luminescent material.
  7. 7. according to the white luminous device described in any one of claims 1 to 3, it is characterised in that in second luminescent layer, The second blue light emitting material doping concentration is 3wt.%~10wt.%.
  8. 8. white luminous device according to claim 1, it is characterised in that in second luminescent layer, the green glow Material of main part doping concentration 0.5wt.%~5wt.%.
  9. 9. white luminous device according to claim 8, it is characterised in that in second luminescent layer, the green glow Material of main part doping concentration 0.5wt.%~3wt.%.
  10. 10. white luminous device according to claim 1, it is characterised in that
    The first electrode is anode, and the second electrode is negative electrode,
    When the white luminous device includes the anode overlapped successively, first luminescent layer, described second luminous When layer and the negative electrode;The hole mobility of the material of main part of first luminescent layer is more than electron mobility, and described second The electron mobility of the material of main part of luminescent layer is more than hole mobility;
    When the white luminous device includes the anode overlapped successively, second luminescent layer, described first luminous When layer and the negative electrode;The hole mobility of the material of main part of second luminescent layer is more than electron mobility, and described first The electron mobility of the material of main part of luminescent layer is more than hole mobility.
  11. 11. white luminous device according to claim 1, it is characterised in that the thickness of first luminescent layer is 15nm ~20nm, the thickness of second luminescent layer is 15nm~20nm.
  12. 12. a kind of display device, it is characterised in that including the white luminous device as described in any one of claim 1~11.
  13. 13. a kind of preparation method of white luminous device, it is characterised in that including at least following steps:
    First electrode layer is formed on substrate;
    The first luminescent layer is formed in the first electrode layer, then forms the second luminescent layer on first luminescent layer, most Afterwards the second electrode lay is formed on second luminescent layer;Or
    The second luminescent layer is formed in the first electrode layer, then forms the first luminescent layer on second luminescent layer, most Afterwards the second electrode lay is formed on first luminescent layer;
    Doped with the first blue light emitting material and red emitting material in first luminescent layer, second luminescent layer is interior to be adulterated There are the second blue light emitting material and green light luminescent material, first blue light emitting material and second blue light emitting material are equal For blue emitting phosphor material, the transmitting main peak of second blue light emitting material is with the absorption spectrum of the green light luminescent material in ripple Maximum absorption band of the long scope in the range of 400nm~480nm partly overlaps, the transmitting main peak of first blue light emitting material Wavelength ratio described in the second blue light emitting material transmitting main peak at least big 4nm of wavelength.
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