CN107248493A - A kind of nanometer line cold-cathode flat board photo-detector - Google Patents
A kind of nanometer line cold-cathode flat board photo-detector Download PDFInfo
- Publication number
- CN107248493A CN107248493A CN201710514493.4A CN201710514493A CN107248493A CN 107248493 A CN107248493 A CN 107248493A CN 201710514493 A CN201710514493 A CN 201710514493A CN 107248493 A CN107248493 A CN 107248493A
- Authority
- CN
- China
- Prior art keywords
- cathode
- cold
- nanometer line
- substrate
- flat board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 81
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- 239000002070 nanowire Substances 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000005286 illumination Methods 0.000 abstract description 3
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000011787 zinc oxide Substances 0.000 description 10
- 230000005611 electricity Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of nanometer line cold-cathode flat board photo-detector.The flat board photo-detector of the present invention is made up of photoconductive anode and nanometer line cold-cathode, and vacuum gap state is kept between photoconductive anode and cold cathode, and photoconductive anode applies high pressure, cold cathode emission electric current.During illumination, the resistance variations of photoconductive anode so that the voltage being applied on cold cathode changes, cold cathode emission electric current changes, by detecting that the electric current that cold cathode changes can realize optical detection.By regulating and controlling cold cathode current emission characteristics, the optical detection of high sensitivity and wide responding range is realized.The present invention can also use addressable cold cathode, realize scanning addressing optical detection.Because there is nanometer cold cathode large area to prepare the characteristics of controllability is good, the present invention has important application on plane photo-detector, electrooptical device, photoimaging device.
Description
Technical field
The present invention relates to nanometer line cold-cathode flat board photo-detector, belong to optical detection field.
Background technology
Plate photo-detector has a wide range of applications in industry, medical treatment and Aero-Space.Especially should in x-ray imaging
In, the X-ray detector of current main flow generally uses indirect conversion mode, i.e.,：X-ray is converted to first with scintillator
Visible ray, then uses the probe unit being made up of photoconduction and thin film transistor (TFT) to read photosignal.Such as Samsung's strain
Formula commercial firm disclose a kind of thin film transistor array substrate for X-ray detector and X-ray detector (Chinese invention patent,
Publication number：CN101325207), wherein photo tft array substrate is by grid wiring, gate insulation layer, active layer, data
The compositions such as wiring, photodiode, organic insulator and biasing wiring.As can be seen here, using the X-ray detection of thin film transistor (TFT)
Device structure is complex, and further raising sensitivity and responding range are restricted by tft characteristicses.
In recent years, researcher starts the vacuum tube constituted using the cold cathode of field-causing electron emission principle as reading device
Realize flat panel detector.Relative to thin film transistor (TFT), cold cathode vacuum tubes have fast response time, spatial resolution height etc. excellent
Point, is expected to realize commercial Application.Coordinate different photoelectric conductor materials, it is possible to achieve to X-ray, visible ray or other wavelength lights
Direct detection.For example, T.Miyoshi et al. is prepared for using Spindt types cold cathode vacuum tubes and amorphous selenium photo-conductive film
Direct-type X-ray flat panel detector (T.Miyoshi, et al, J.Synchrotron Rad., 15,281-284 (2008)), should
Flat panel detector can be applied to protein crystal imaging, and pixel size is 20 microns, and frame frequency is that 30 frames are per second, and maximum voltage is
1600 volts.But, the cold-cathode electron source manufacture craft of large area Spindt types is extremely difficult, thus more difficult using realization
Spindt type cold cathode vacuum tubes large-area flat-plates detector is difficult.In addition, the sensitivity of this class flat board photo-detector and dynamic
State response range also need further raising.Therefore, we propose a kind of using nanometer line cold-cathode realization in the present invention
Amplification and the flat board photo-detector read, using the non-linear current-voltage characteristic of nanometer line cold-cathode, are realized highly sensitive
Optical detection.Meanwhile, the characteristics of controllability is good is prepared by using nanometer cold cathode large area, is expected to realize that large-area flat-plate is detected
The low cost preparation of device.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of structure optimization, it is possible to achieve highly sensitive
Degree detection, while sensitivity and the adjustable nanometer line cold-cathode flat board photo-detector of responding range, the cold the moon of the nano wire
Pole flat board photo-detector has imaging function.
The present invention using following technical scheme to solve the prior art the problem of：
A kind of nanometer line cold-cathode flat board photo-detector, including cold cathode substrate and photoconductive anode grid substrate, described cold the moon
Vacuum gap is kept between electrode substrate and photoconductive anode grid substrate.
During the nanometer line cold-cathode flat board photo-detector work of the present invention, photoconductive anode grid substrate is relative to cold cathode substrate
Apply a positive high voltage.During illumination, the resistance of photoconductive anode grid substrate changes so that be applied on cold cathode substrate
Voltage changes, and causes the electric current on cold cathode substrate as nonlinear change occurs for voltage, electricity when realizing light intensity change
That flows is widely varied.Thus, by detecting that highly sensitive optical detection can be achieved in the change of cold cathode substrate emission current.
Preferably, the cold cathode substrate and photoconductive anode grid substrate being fixed together by slider mutually insulated,
The distance between the cold cathode substrate and photoconductive anode grid substrate are 0.1mm~1mm.
Preferably, the photoconductive anode grid substrate is mainly made up of glass substrate, anode electrode and photoconductor, the sun
The lead-out wire being connected with external power source is connected on the electrode of pole, the external power source is used to apply voltage to photoconductive anode grid substrate.
Preferably, the voltage range that the external power source is applied to photoconductive anode grid substrate is 100V~4000V.
Preferably, the photoconductor is made up of photo-conductive film material.
Preferably, the cold cathode substrate is main by glass substrate, cathode electrode and the nanometer being distributed on cathode electrode
Line lattice is constituted.Nanometer line cold-cathode used in the present invention is semiconductor nanowires, can large area localization be prepared in flat substrate
On.
Preferably, the nanometer line lattice is included by zinc oxide nanowire, cupric oxide nano line or tungsten oxide nano institute
The dot matrix of composition.
Preferably, the nanometer line cold-cathode flat board photo-detector can be realized to visible ray, infrared ray, ultraviolet, X-ray
And the detection of the optical band such as gamma-rays.
Preferably, described cold cathode substrate is addressable nanometer line cold-cathode substrate, addressable nano wire
Cold cathode substrate includes glass substrate, cathode electrode bar, gate electrode bar, nanometer line lattice and is prepared in cathode electrode bar and grid
Insulating barrier between the electrode strip of pole, the cathode electrode bar is directly prepared in glass substrate and intersected with gate electrode bar
It is vertically arranged, the nanometer line lattice is grown on cathode electrode bar.Described cold cathode substrate can pass through cold-cathode electron source
Address and realize imaging function.
Preferably, described addressable nanometer line cold-cathode substrate picks out lead and external power source on gate electrode bar
It is connected, picking out lead on cathode electrode bar is connected to the ground.
Preferably, the voltage range applied on the gate electrode bar of described addressable cold cathode substrate be 0~
200V。
Compared with prior art, the beneficial effects of the invention are as follows：
The nanometer line cold-cathode flat board photo-detector of the present invention, is realized using nanometer line cold-cathode and amplifies and read, utilized
The non-linear current-voltage characteristic of nanometer line cold-cathode, realizes highly sensitive optical detection.Meanwhile, by using nanometer cold cathode
Large area prepares the characteristics of controllability is good, is expected to realize the low cost preparation of large-area flat-plate detector.It is applied to by regulation
Voltage on anode electrode or gate electrode, can adjust sensitivity and the responding range of the flat panel detector of the present invention.
Can be by using different nanometer line cold-cathodes, such as different diameters, height, the nano wire of density, or change negative and positive interpolar
Away from etc. method realize the flat board photo-detector with different sensitivity and responding range.
Brief description of the drawings
Fig. 1 is photo-detector structural representation described in embodiment 1.
In figure：(a) negative electrode glass substrate；(b) cathode electrode；(c) nano wire；(d) slider；(e) photoconductor；(f)
Anode electrode；(g) anode glass substrate.
Fig. 2 is addressable flat board photo-detector structural representation described in embodiment 2.
In figure：(a) negative electrode glass substrate；(b) cathode electrode bar；(c) insulating barrier；(d) gate electrode bar；(e) nano wire；
(f) slider；(g) photoconductor；(h) anode electrode；(i) anode glass substrate.)
Fig. 3 is ZnO nano-wire cold cathode array SEM shape appearance figures.
Fig. 4 is ZnO nano-wire cold cathode high magnification numbe SEM shape appearance figures.
During Fig. 5 is the photoresponse under different anode voltages, figure：(a) I-V characteristic of black state and detector during illumination；
(b) the photocurrent response curve under different anode voltages.
In photoresponse when Fig. 6 is the cold cathode using different cathode characteristics, figure：(a) photo-detector #1 and #2 negative electrode
I-V characteristic；(b) the photocurrent response curve under different cathode characteristics.
Fig. 7 is the photocurrent response curve of the detector of different negative and positive die openings.
Embodiment
The structure to the present invention makees further details of explanation and illustration with reference to the accompanying drawings and detailed description, but simultaneously
Non- is the restriction to structure of the present invention.
The flat board photo-detector of the present invention mainly has the cold cathode substrate of nanometer line cold-cathode and preparation to have photoelectricity by preparation
The anode grid substrate composition of conductor.Cathode electrode and nanometer line cold-cathode are directly prepared on cold cathode substrate substrate, or prepares band grid
The nanometer line cold-cathode electron source array of pole.Anode electrode and photoconductor are sequentially prepared on anode grid substrate substrate.Above-mentioned the moon
Electrode substrate and anode grid substrate being fixed together by support mutually insulated, and keep true between cathode base and anode grid substrate
Empty gap state.
Nanometer line cold-cathode electron source array with grid can realize addressing function, and its structure includes intersecting vertically
Cathode electrode bar and gate electrode bar, insulating barrier between cathode electrode bar and gate electrode bar and be grown in cathode electrode
Nanometer line lattice on bar, is addressed, it is possible to achieve imaging function by cold-cathode electron source.
Embodiment 1
As shown in figure 1, the nanometer line cold-cathode flat board photo-detector of the present embodiment is by cold cathode substrate and photoconductive anode
Substrate is constituted.Cold cathode substrate is made up of negative electrode glass substrate a, cathode electrode b and ZnO nano-wire dot matrix c, wherein cathode electrode
B is ITO electrode.Photoconductive anode grid substrate is made up of anode glass substrate g, anode electrode f and photoconductor e, its Anodic electricity
Pole f is ITO electrode.Cold cathode substrate and photoconductive anode grid substrate are separated by slider d, pass through being fixed on for support mutually insulated
Together, the spacing between cold cathode substrate and photoconductive anode grid substrate is 0.1mm~1mm.Wherein, glass substrate thickness is 3mm；
ITO electrode is prepared by magnetically controlled sputter method, and thickness is 500nm；ZnO nano-wire dot matrix is made using following methods, first
ZnO nano-wire, last thermal oxide temperature are formed by photoetching and electron beam evaporation formation Zn dot matrix, then by thermal oxide in an atmosphere
Spend for 500 DEG C, the time is 3 hours.Photoconductor e is the zinc sulfide film prepared by print process；Slider d material is ceramics
Piece.Prepare after above-mentioned device, the device is placed in the vacuum chamber, vacuum remains 1 × 10-5Pa, then in anode
Pick out lead in ITO electrode with external power source to be connected, picking out lead in the ITO electrode of negative electrode is connected to the ground.The ITO electricity of anode
The voltage applied on extremely is 100V~4000V.
Embodiment 2
Please refer to Fig. 2, such as Fig. 2 is addressable flat board photo-detector structural representation.
Addressable nanometer line cold-cathode flat board photo-detector described in the present embodiment, by cold cathode substrate and photoconductive anode
Substrate is constituted.The structure of photoconductive anode grid substrate is as described in Example 1.Cold cathode substrate is addressable nanometer line cold-cathode base
Plate, including glass substrate a, cathode electrode bar b, gate electrode bar d, nanometer line lattice e and it is prepared in cathode electrode bar b and grid
Insulating barrier c between electrode strip d.Cathode electrode bar b is directly prepared on glass substrate a, is intersected with gate electrode bar vertical
Straight distribution.Nanometer line lattice e is grown on cathode electrode bar b.Prepare after above-mentioned device, the device placed in the vacuum chamber,
Vacuum remains 1 × 10-5Pa, then picks out lead in the ITO electrode of anode and on the gate electrode bar of cold cathode substrate
It is connected with external power source, picking out lead on the cathode electrode bar of cold cathode substrate is connected to the ground.Applied in the ITO electrode of anode
Plus voltage be 100V~4000V, the voltage applied on the gate electrode bar of cold cathode substrate is 0~200V.Pass through cold the moon
Pole electron source addressing, the present embodiment can realize the function of addressing imaging.
Fig. 3 is the ZnO nano-wire cold cathode array shape appearance figure observed using SEM.Fig. 4 then shows ZnO
Shape appearance figure under nano wire high-amplification-factor, the stand density of ZnO nano-wire is about 5 × 108cm-2, about 2 μm of height, point
It is about 20nm to hold diameter.
Fig. 5 (a) is current-voltage (I-V) characteristic of photo-detector under dark surrounds and under white light, it can be seen that
Under identical voltage, the ZnO nano-wire Flied emission electric current of white light is significantly greater than the electric current under dark surrounds.In 1600V sun
Under pole tension, the ZnO nano-wire Flied emission electric current under dark surrounds and white light is respectively 97.5 μ A and 514.0 μ A.Fig. 5
(b) it is to apply photocurrent response curve when voltage is 1350V and 1600V to anode respectively.When anode voltage is 1350V,
Photoelectric current/dark current ratio about 15.5；When anode voltage is 1600V, photoelectric current/dark current ratio about 6.6.Photo-detector
Sensitivity and responding range and photoelectric current/dark current ratio are closely related.Therefore, the sensitivity of photo-detector and dynamic response
Scope can be adjusted by anode voltage.
Fig. 6 (a), which is photo-detector, uses dark-state electricity during negative electrode (the negative electrode #1 and negative electrode #2) of two kinds of different emission characteristics
Stream-voltage (I-V) characteristic.It can be seen that under identical voltage, photo-detector #1 electric current is substantially higher than optical detection #2.
Under 1925V anode voltage, photo-detector #1 and #2 electric current are respectively 1804 μ A and 184 μ A.Fig. 6 (b) is fixed anode electricity
When pressure and negative and positive die opening, photo-detector #1 and #2 photocurrent response curve.As a result show, photo-detector #1 and #2 photoelectricity
Stream/dark current ratio respectively 20.9 and 9.4.The sensitivity of photo-detector and responding range and photoelectric current/dark current ratio are close
Cut is closed.Therefore, the result illustrates to realize with different sensitivity and move by using the negative electrode of different emission characteristics
The photo-detector of state response range.
Fig. 7 is photocurrent response curve of the photo-detector under different negative and positive die openings.Negative and positive die opening is respectively
When 0.28mm, 0.4mm and 0.52mm, brightness electric current ratio respectively 15.7,7.8 and 1.8.The sensitivity of photo-detector and dynamic are rung
Answer scope with photoelectric current/dark current than closely related.Therefore, result explanation can come real by using different negative and positive die openings
Now there is the photo-detector of different sensitivity and responding range.
Claims (10)
1. a kind of nanometer line cold-cathode flat board photo-detector, it is characterised in that：Including cold cathode substrate and photoconductive anode grid substrate,
Vacuum gap is kept between the cold cathode substrate and photoconductive anode grid substrate.
2. a kind of nanometer line cold-cathode flat board photo-detector according to claim 1, it is characterised in that：The cold cathode base
Plate and photoconductive anode grid substrate being fixed together by slider mutually insulated, the cold cathode substrate and photoconductive anode base
The distance between plate is 0.1mm~1mm.
3. a kind of nanometer line cold-cathode flat board photo-detector according to claim 1 or 2, it is characterised in that：The photoelectricity
Lead anode grid substrate to be mainly made up of glass substrate, anode electrode and photoconductor, be connected on the anode electrode and external power source
The lead-out wire of connection, the external power source is used to apply voltage to photoconductive anode grid substrate.
4. a kind of nanometer line cold-cathode flat board photo-detector according to claim 3, it is characterised in that：The external power source
The voltage range applied to photoconductive anode grid substrate is 100V~4000V.
5. a kind of nanometer line cold-cathode flat board photo-detector according to claim 3, it is characterised in that：The photoconductor
It is made up of photo-conductive film material.
6. a kind of nanometer line cold-cathode flat board photo-detector according to claim 1 or 2, it is characterised in that：Described cold the moon
Electrode substrate is mainly made up of glass substrate, cathode electrode and the nanometer line lattice being distributed on cathode electrode.
7. a kind of nanometer line cold-cathode flat board photo-detector according to claim 6, it is characterised in that：The nano wire point
Battle array includes the dot matrix being made up of zinc oxide nanowire, cupric oxide nano line or tungsten oxide nano.
8. a kind of nanometer line cold-cathode flat board photo-detector according to claim 1, it is characterised in that：The nano wire is cold
The light of negative electrode flat board photo-detector detection includes visible ray, infrared ray, ultraviolet, X-ray and gamma-rays.
9. a kind of nanometer line cold-cathode flat board photo-detector according to claim 1, it is characterised in that：The cold cathode base
Plate realizes addressable nanometer line cold-cathode substrate of imaging function to be addressed by cold-cathode electron source, described addressable
Nanometer line cold-cathode substrate includes glass substrate, cathode electrode bar, gate electrode bar, nanometer line lattice and is prepared in cathode electrode
Insulating barrier between bar and gate electrode bar, the cathode electrode bar be directly prepared in glass substrate and with gate electrode bar phase
Mutual intersecting vertical is set, and the nanometer line lattice is grown on cathode electrode bar.
10. a kind of nanometer line cold-cathode flat board photo-detector according to claim 9, it is characterised in that：The addressable
Nanometer line cold-cathode substrate pick out lead on gate electrode bar and be connected with external power source, pick out lead on cathode electrode bar
It is connected to the ground, the voltage range applied on the gate electrode bar is 0~200V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710514493.4A CN107248493A (en) | 2017-06-29 | 2017-06-29 | A kind of nanometer line cold-cathode flat board photo-detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710514493.4A CN107248493A (en) | 2017-06-29 | 2017-06-29 | A kind of nanometer line cold-cathode flat board photo-detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107248493A true CN107248493A (en) | 2017-10-13 |
Family
ID=60014751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710514493.4A Pending CN107248493A (en) | 2017-06-29 | 2017-06-29 | A kind of nanometer line cold-cathode flat board photo-detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107248493A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346488A (en) * | 2018-08-24 | 2019-02-15 | 中山大学 | A kind of method and its structure directly making cold cathode Flat X-ray detector on scintillator |
| CN113471052A (en) * | 2021-06-29 | 2021-10-01 | 中山大学 | Photoconductive cold cathode flat-panel X-ray detector and preparation method and application thereof |
| CN114188198A (en) * | 2021-10-21 | 2022-03-15 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN115000108A (en) * | 2022-06-06 | 2022-09-02 | 中山大学 | Addressable flat X-ray source driven by high-voltage TFT and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5567929A (en) * | 1995-02-21 | 1996-10-22 | University Of Connecticut | Flat panel detector and image sensor |
| US5804833A (en) * | 1996-10-10 | 1998-09-08 | Advanced Scientific Concepts, Inc. | Advanced semiconductor emitter technology photocathodes |
| US20080135766A1 (en) * | 2005-02-01 | 2008-06-12 | Sang Hee Nam | Digital X-Ray Image Detector Using an Fed Device |
| CN103364080A (en) * | 2013-07-18 | 2013-10-23 | 北京工商大学 | Metal nanowire detector and method for measuring vacuum ultraviolet intensity |
-
2017
- 2017-06-29 CN CN201710514493.4A patent/CN107248493A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5567929A (en) * | 1995-02-21 | 1996-10-22 | University Of Connecticut | Flat panel detector and image sensor |
| US5804833A (en) * | 1996-10-10 | 1998-09-08 | Advanced Scientific Concepts, Inc. | Advanced semiconductor emitter technology photocathodes |
| US20080135766A1 (en) * | 2005-02-01 | 2008-06-12 | Sang Hee Nam | Digital X-Ray Image Detector Using an Fed Device |
| CN103364080A (en) * | 2013-07-18 | 2013-10-23 | 北京工商大学 | Metal nanowire detector and method for measuring vacuum ultraviolet intensity |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346488A (en) * | 2018-08-24 | 2019-02-15 | 中山大学 | A kind of method and its structure directly making cold cathode Flat X-ray detector on scintillator |
| CN109346488B (en) * | 2018-08-24 | 2021-05-04 | 中山大学 | Method for directly manufacturing cold cathode flat X-ray detector on scintillator and structure thereof |
| CN113471052A (en) * | 2021-06-29 | 2021-10-01 | 中山大学 | Photoconductive cold cathode flat-panel X-ray detector and preparation method and application thereof |
| CN114188198A (en) * | 2021-10-21 | 2022-03-15 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN114188198B (en) * | 2021-10-21 | 2024-04-26 | 中山大学 | Annular addressable cold cathode X-ray source device and preparation method and application thereof |
| CN115000108A (en) * | 2022-06-06 | 2022-09-02 | 中山大学 | Addressable flat X-ray source driven by high-voltage TFT and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107248493A (en) | A kind of nanometer line cold-cathode flat board photo-detector | |
| Ouyang et al. | Dual-polarity response in self-powered ZnO NWs/Sb2Se3 film heterojunction photodetector array for optical communication | |
| CN104393024B (en) | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof | |
| CN109346488B (en) | Method for directly manufacturing cold cathode flat X-ray detector on scintillator and structure thereof | |
| US5212426A (en) | Integrally controlled field emission flat display device | |
| KR100660466B1 (en) | Digital x-ray image detector of using a fed device | |
| CN102969322A (en) | Radiological image detection apparatus | |
| WO2017031004A1 (en) | Electron source | |
| Zhang et al. | Electron bombardment induced photoconductivity and high gain in a flat panel photodetector based on a ZnS photoconductor and ZnO nanowire field emitters | |
| CN107768390A (en) | Image detector | |
| JP6371629B2 (en) | Imaging device and method of operating the same | |
| JP2014194410A (en) | Imaging apparatus | |
| Gulyaev et al. | New solutions for designing promising devices based on low-voltage field emission from carbon nanostructures | |
| Zhang et al. | Crystallography-derived optoelectronic and photovoltaic properties of CsPbBr3 perovskite single crystals as revealed by in situ transmission electron microscopy | |
| Zheng et al. | The fabrication and properties of field emission display based on ZnO tetrapod-liked nanostructure | |
| Komoda et al. | Fabrication of a 7.6‐in.‐diagonal prototype ballistic electron surface‐emitting display on a glass substrate | |
| KR101699380B1 (en) | Semiconductor radiation detecting device | |
| CN209708980U (en) | A kind of X-ray flat panel detector based on polycrystalline SiTFT | |
| Zhang et al. | Light-responsive field emission for display applications | |
| CN109920809A (en) | A kind of X-ray flat panel detector and preparation method thereof | |
| CN113471052B (en) | Photoconductive cold cathode flat-panel X-ray detector and preparation method and application thereof | |
| Yamagishi et al. | First study of a flat vacuum image sensor with a field-emitter array | |
| Zhao et al. | Fabrication of large-area arrays of coaxial gated ZnO nanowire field emitters for vacuum microelectronics applications | |
| KR20120001991A (en) | X-ray radiography system and the manufacture method thereof | |
| Lin et al. | Enhanced field electron emission from ZnO nanowires by $\text {Bi} _ {0.5}\text {Sb} _ {1.5}\text {Te} _ {3} $ coating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171013 |
|
| RJ01 | Rejection of invention patent application after publication |