CN106959165B - Single-chip temperature distribution detection sensor - Google Patents
Single-chip temperature distribution detection sensor Download PDFInfo
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- CN106959165B CN106959165B CN201610009590.3A CN201610009590A CN106959165B CN 106959165 B CN106959165 B CN 106959165B CN 201610009590 A CN201610009590 A CN 201610009590A CN 106959165 B CN106959165 B CN 106959165B
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- thermocouple
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- 238000001514 detection method Methods 0.000 title claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The application provides a single-chip temperature distribution detects sensor, this sensor includes: a working area film; the thermopile is formed by connecting at least 2 thermocouples in series, and the working end of each thermocouple is positioned on the working area film; and detection electrodes electrically connected to the thermocouples and led out from the thermopiles at equal intervals, wherein the number of the detection electrodes is at least 3, and the number of the thermocouples between the adjacent detection electrodes is equal except the detection electrodes positioned at both end portions of the thermopiles. According to the temperature detection method and device, the temperature distribution of the detection area can be detected, so that the temperature detection device not only has the temperature measurement function, but also has the intelligent temperature distribution identification capability.
Description
Technical field
This application involves sensor technical field more particularly to a kind of single-chip Temperature Distribution detection sensors.
Background technique
Temperature sensing is the topic of sensor industry hot topic all the time.Wherein infrared detection technique is by its contactless survey
Temperature is more welcome by vast design, manufacture and use person.The one kind of thermopile temperature sensor as infrared detection technique, manufacture
Simple process, it is at low cost, easy to use, be widely studied without the features such as 1/f noise.
Thermopile temperature sensor main operational principle is Seebeck (Seebeck) effect.It is two that the effect, which can be sketched,
Kind there are different Seebeck coefficient α 1, material one end of α 2 is connected one end open circuit, if both ends there are temperature difference Δ T=T1-T2,
An open circuit potential Δ V can be generated in open end.There is different Seebeck coefficient α 1, the connected one end in material one end of α 2 by two kinds
Open circuit, as soon as a thermocouple can be constituted, if N number of thermocouple, which is together in series, forms thermoelectric pile, compared with single thermocouple, heat
Pile can produce bigger thermoelectrical potential, i.e. Δ V=N* (α 1- α 2) * Δ T.
Fig. 1 is a stereoscopic schematic diagram of traditional single-chip thermopile temperature sensor, as shown in Figure 1, thermoelectric pile temperature
Spending sensor 10 usually has closing membrane structure, and the working end for constituting the thermocouple 1b of thermoelectric pile is located on close membrane 1a.
Fig. 2 is a schematic top plan view of traditional single-chip thermopile temperature sensor, as shown in Fig. 2, thermoelectric pile temperature
Spending sensor 10 includes close membrane 1a, polysilicon strip 2a, aluminum strip 3a, electrode 4a and electrode 5a.Wherein, the polycrystalline on close membrane 1a
Bi-material layers one of of the silicon strip 2a as thermocouple, aluminum strip 3a is as the wherein another of thermocouple bi-material layers, two electrodes 4a, 5a
It is also possible to aluminum material, multiple polysilicon strip 2a and aluminum strip 3a are sequentially connected in series to form thermoelectric pile.
At work, the infra-red radiation that detecting object issues is closed film 1a absorption to thermopile temperature sensor, generates heat
Amount generates induction thermoelectrical potential V so that polysilicon strip 2a and aluminum strip 3a generates Seebeck effect on electrode 4a, 5aTP, by rear
The temperature of the continuous available testee of specific integrated circuit (ASIC) conversion.
Fig. 3 is a schematic diagram of the search coverage of single-chip thermopile temperature sensor.Fig. 1, this biography shown in Fig. 2
What the voltage that the single-chip thermopile temperature sensor 10 of system measures actually represented is search coverage A (that is, visual field scope)
The average value of interior object being measured temperature.When there was only a kind of object and the object temperature uniformity in search coverage, thermometric
Accurately.
It should be noted that the above description of the technical background be intended merely to it is convenient to the technical solution of the application carry out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes the application's
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Summary of the invention
The inventors of the present application found that when object temperature uneven distribution in search coverage, or there are many different temperatures
When object, the thermometric of traditional single-chip thermopile temperature sensor can only represent an average value, cannot accurately learn the spy
Survey specific Temperature Distribution in region.
The application provides a kind of single-chip Temperature Distribution detection sensor to be made by the improvement to existing temperature sensor
It had both had the temp sensing function as Conventional thermoelectric heap temperature sensor, while also having and detecting temperature point in the temperature region
The function of cloth situation increases the application direction of temperature sensor as a result, on the basis of not increasing production cost, can
It enough realizes intelligent recognition, meets the demand of current smart electronics.
According to the one aspect of the embodiment of the present application, a kind single-chip Temperature Distribution detection sensor, feature are provided
It is, which includes:
Workspace film；
Thermoelectric pile is connected in series by least two thermocouple, also, the working end of each thermocouple is all located at institute
It states on the film of workspace；And
Detecting electrode is electrically connected with the thermocouple, and is drawn from the thermoelectric pile equal intervals, the detection electricity
The quantity of pole is at least three, also, other than the detecting electrode in addition to being located at the thermoelectric pile both ends, adjacent is described
The thermocouple quantity between detecting electrode is equal.
According to the other side of the embodiment of the present application, in the thermoelectric pile, the working end edge of the thermocouple
Circle distribution or along lineal layout.
According to the other side of the embodiment of the present application, the thermocouple is formed by aluminum strip and polysilicon strip.
According to the other side of the embodiment of the present application, the detecting electrode is aluminium electrode.
The beneficial effects of the present application are as follows: the quantity of detecting electrode is increased in thermopile temperature sensor, passes through inspection
The voltage between adjacent electrode is surveyed, the Temperature Distribution of detection zone can be detected, thus make it that not only there is temp sensing function,
Ability with Temperature Distribution intelligent recognition, compensating for existing thermopile IR temperature sensor as a result, can only field of detection
The deficiency of the average value of object temperature in angle.
Referring to following description and accompanying drawings, specific implementations of the present application are disclosed in detail, specify the original of the application
Reason can be in a manner of adopted.It should be understood that presently filed embodiment is not so limited in range.In appended power
In the range of the spirit and terms that benefit requires, presently filed embodiment includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in a other embodiment, is combined with the feature in other embodiment, or the feature in substitution other embodiment.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Detailed description of the invention
Included attached drawing is used to provide that a further understanding of the embodiments of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with verbal description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is laborious, it is also possible to obtain other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is a stereoscopic schematic diagram of traditional single-chip thermopile temperature sensor；
Fig. 2 is a schematic top plan view of traditional single-chip thermopile temperature sensor；
Fig. 3 is a schematic diagram of the search coverage of traditional single-chip thermopile temperature sensor；
Fig. 4 is a schematic top plan view of the single-chip temperature detecting sensor of the application；
Fig. 5 is one of the corresponding relationship in the application detector between the temperature of the different zones of each potential and testee
A schematic diagram；
Fig. 6 is another schematic top plan view of the single-chip temperature detecting sensor of the application.
Specific embodiment
Referring to attached drawing, by following specification, the aforementioned and other feature of the application be will be apparent.In specification
In attached drawing, specific implementations of the present application are specifically disclosed, which show wherein can be using the portion of the principle of the application
Divide embodiment, it will thus be appreciated that the application is not limited to described embodiment, on the contrary, the application includes falling into appended power
Whole modifications, modification and equivalent in the range of benefit requirement.
In this application, for convenience of description, the face for being provided with thermocouple of film is known as " upper surface ", it will be with this
" upper surface " opposite face is known as " lower surface ", and "upper" direction refers to the direction from " lower surface " direction " upper surface " as a result,
"lower" direction is contrary with "upper", also, "upper" direction and "lower" direction are referred to as " longitudinal direction ", will be with " upper surface "
Parallel direction is known as " transverse direction ".It should be noted that in this application, the setting of "up" and "down" is in contrast, to be only
For convenience of description, orientation that is specifically used or manufacturing the single-chip Temperature Distribution detection sensor is not represented.
Embodiment 1
The embodiment of the present application 1 provides a kind of single-chip Temperature Distribution detection sensor.Fig. 4 is a vertical view of the sensor
Schematic diagram, as shown in figure 4, the sensor 100 includes workspace film 1, thermoelectric pile and detecting electrode 6-10.
In this application, thermoelectric pile can be connected in series by least two thermocouple, also, the working end of each thermocouple
It each may lie on the workspace film 1；Detecting electrode 6-10 can be electrically connected with thermocouple, and from thermoelectric pile equal intervals
Ground is drawn, and the quantity of detecting electrode is at least three, also, the detecting electrode in addition to being located at the thermoelectric pile both ends it
Outside, the thermocouple quantity between the adjacent detecting electrode is equal.
By the application, the quantity of detecting electrode is increased in thermopile temperature sensor, by detecting adjacent electrode
Between voltage, the Temperature Distribution of detection zone can be detected, to make it that not only there is temp sensing function, it may have temperature point
The ability of cloth intelligent recognition, compensating for existing thermopile IR temperature sensor as a result, can only object temperature in field of detection angle
The deficiency of the average value of degree.
In the present embodiment, workspace film 1 can be closed film, and specific structure and manufacturing method can be with reference to existing
There is technology, this embodiment is not repeated.
In the present embodiment, thermocouple can be made of polysilicon strip 2 and aluminum strip 3, and the working end of the thermocouple can position
In on workspace film 1, also, the thermocouple that multiple polysilicon strips 2 and aluminum strip 3 are constituted is sequentially connected in series to form thermoelectric pile.Certainly,
The present embodiment is without being limited thereto, and the thermocouple can also be formed by other materials.
In the present embodiment, as shown in figure 4, detecting electrode 6,7 can be the electrode positioned at thermoelectric pile both ends, it is equivalent to figure
4a, 5a in 2.
In Fig. 4, electrode 8,9,10 can be the electrode being directly electrically connected with polysilicon strip 2 or aluminum strip 3, these electrodes 8,
9,10 extension that can be aluminum strip or polysilicon strip, there is no the structures and performance that change thermoelectric pile for they.These electrodes 8,9,
10 are equally spaced between electrode 6,7.As shown in figure 4, the sensor 100 shares 5 electrodes, respectively electrode 6,7,8,
9,10.Thermopile sensor is divided into 4 parts by this 5 electrodes, can all generate induction thermoelectrical potential between 5 electrodes, respectively
V610、V910、V89、V78.Since thermopile sensor is cascaded structure, therefore there is VTP=V610+V910+V89+V78, and in 4 regions
Thermoelectrical potential sensing 4 different directions of object Temperature Distribution.
Fig. 5 is one of the corresponding relationship in detector 100 between the temperature of the different zones of each potential and testee
Schematic diagram, as shown in figure 5, when the uniformity of temperature profile for the object that sensor 100 is detected, due to thermopile sensor 4
The structure design in region is identical, that is, the thermocouple quantity between adjacent electrode is equal, that is to say, that between electrode 7,8, electricity
Between pole 8,9, the thermocouple quantity between electrode 9,10 and between electrode 10,6 is equal, therefore V610=V910=V89=V78=
VTP/4.When temperature distribution is non-uniform in the object area that thermopile sensor 100 is detected, V610≠V910≠V89≠V78,
It thus can be according to the size of the thermoelectrical potential judged in each region, to learn the Temperature Distribution feelings in each region of detecting object
Condition, the region that thermopile sensor divides is more, and Temperature Distribution is also more detailed.
It is a variation example of Fig. 4 shown in Fig. 6, in Fig. 6, quantity ratio Fig. 4's of detecting electrode 11-19 is more, as a result, can
Enough more precisely detect the profiling temperatures in search coverage.
In the present embodiment, the working end of thermocouple is circumferentially distributed, thus, it is possible to detect the temperature in search coverage
In the distribution of circumferencial direction.But the present embodiment is without being limited thereto, the working end of thermocouple can also be made along lineal layout, as a result,
The temperature in search coverage is able to detect in the distribution of rectilinear direction.
In the present embodiment, detecting electrode can be aluminium electrode, thereby, it is possible to traditional thermopile IR temperature sensing
The manufacturing process of device is compatible.Certainly, the application is without being limited thereto, can also manufacture detecting electrode using other materials.
Combine specific embodiment that the application is described above, it will be appreciated by those skilled in the art that this
A little descriptions are all exemplary, and are not the limitation to the application protection scope.Those skilled in the art can be according to the application
Spirit and principle various variants and modifications are made to the application, these variants and modifications are also within the scope of application.
Claims (4)
1. a kind of single-chip Temperature Distribution detection sensor, which is characterized in that the sensor includes:
Workspace film；
Thermoelectric pile is connected in series by least two thermocouple, also, the working end of each thermocouple is all located at the work
Make on area's film；And
Detecting electrode is electrically connected with the thermocouple, and is drawn from the thermoelectric pile equal intervals, the detecting electrode
Quantity is at least three, also, other than the detecting electrode in addition to being located at the thermoelectric pile both ends, the adjacent detection
The thermocouple quantity between electrode is equal.
2. single-chip Temperature Distribution detection sensor as described in claim 1, which is characterized in that
In the thermoelectric pile, the working end of the thermocouple is circumferentially distributed or along lineal layout.
3. single-chip Temperature Distribution detection sensor as described in claim 1, which is characterized in that
The thermocouple is formed by aluminum strip and polysilicon strip.
4. single-chip Temperature Distribution detection sensor as described in claim 1, which is characterized in that
The detecting electrode is aluminium electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610009590.3A CN106959165B (en) | 2016-01-08 | 2016-01-08 | Single-chip temperature distribution detection sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610009590.3A CN106959165B (en) | 2016-01-08 | 2016-01-08 | Single-chip temperature distribution detection sensor |
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| Publication Number | Publication Date |
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| CN106959165A CN106959165A (en) | 2017-07-18 |
| CN106959165B true CN106959165B (en) | 2019-07-16 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328251A (en) * | 2000-06-06 | 2001-12-26 | 精工爱普生株式会社 | Infrared-ray detecting element and temp. tester |
| CN104089717A (en) * | 2014-07-23 | 2014-10-08 | 电子科技大学 | Thermopile |
| CN104236723A (en) * | 2014-09-30 | 2014-12-24 | 上海集成电路研发中心有限公司 | Three-dimensional thermopile infrared detector structure of MEMS (micro-electromechanical system) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000131147A (en) * | 1998-10-23 | 2000-05-12 | Mitsubishi Materials Corp | Infrared sensor |
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2016
- 2016-01-08 CN CN201610009590.3A patent/CN106959165B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1328251A (en) * | 2000-06-06 | 2001-12-26 | 精工爱普生株式会社 | Infrared-ray detecting element and temp. tester |
| CN104089717A (en) * | 2014-07-23 | 2014-10-08 | 电子科技大学 | Thermopile |
| CN104236723A (en) * | 2014-09-30 | 2014-12-24 | 上海集成电路研发中心有限公司 | Three-dimensional thermopile infrared detector structure of MEMS (micro-electromechanical system) |
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