CN106644401A - Test system and test method for testing semiconductor laser - Google Patents
Test system and test method for testing semiconductor laser Download PDFInfo
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- CN106644401A CN106644401A CN201510740442.4A CN201510740442A CN106644401A CN 106644401 A CN106644401 A CN 106644401A CN 201510740442 A CN201510740442 A CN 201510740442A CN 106644401 A CN106644401 A CN 106644401A
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Abstract
The present invention discloses a working performance detecting technology for a semiconductor laser, and particularly relates to a test system and a test method for testing the semiconductor laser, which belong to the technical field of semiconductor photoelectric device manufacturing technology. The system comprises a to-be-tested optical device and a high and low temperature circulation box used for placing the to-be-tested optical device. The to-be-tested optical device is connected with a current source used for supplying a current source to the to-be-tested optical device. The to-be-tested optical device is also connected with an optical power meter used for testing the output optical power. The current source and the output signal end of the optical power meter are connected with a computer. Based on the above structure and the above method, the detection can be conveniently, effectively and quickly conducted. The working stability and the failure mode of a laser are pre-determined, so that the detection period is greatly shortened. The detection cost is greatly reduced. Meanwhile, the production process is effectively controlled and the product cost is reduced to a minimum value. Simultaneously, the benefits of customers are ensured. The test method is simple and convenient. The construction cost of the test system is low.
Description
Technical field
The present invention relates to a kind of service behaviour detection technique of semiconductor laser, the test system and method for testing of specifically a kind of semiconductor laser, belong to the manufacturing technology field of semiconductor photoelectric device.
Background technology
As the manufacturing technology of semiconductor photoelectric device is developed rapidly, the reliability requirement more and more higher of sun adjuster part, therefore in process of production the reliability testing to device is just highly desirable to.The method of testing of the optical power stability for wherein working in the environment of high/low temperature with regard to device in prior art, always adopt based on the sample presentation detection of high-end cDNA microarray method and client terminal, traditionally such detection occurs many uncertain influence factors, prevent production process is from carrying out effective management and control, at the same also there are problems that inspection cycle length and.
The content of the invention
The technical problem to be solved in the present invention be to provide one kind can conveniently, effectively, it is rapid it is reliable detected, so as to shortening round of visits, inspection cost being reduced, while carrying out the test system and method for testing of the semiconductor laser of effective management and control to production process.
In order to solve above-mentioned technical problem, the test system of the semiconductor laser of the present invention, high/low temperature circulating box including optical device to be measured and for placing optical device to be measured, optical device to be measured is connected with a current source that can provide electric current for optical device to be measured, optical device to be measured is also connected with a light power meter that can test its light power, and the output signal end of current source and light power meter is all connected on a computer.
A kind of method of testing of the test system of above-mentioned semiconductor laser, comprises the following steps:
A:It is Po to add an operating current to make light power to optical device to be measured with current source at normal temperatures, tests its current back facet current Imo and records；
B:It is Imo to add an operating current to make back facet current to optical device to be measured with current source at high temperature, tests its current light power P1 and records；
C:It is Imo to add an operating current to make back facet current to testing laser device with current source at low temperature, tests its current light power P2 and records；
D：The test number for recording is calculated the optical power change of optical device to be measured under various state of temperatures using formula TE=10LOG (Pi/Po) using computer；
E:If the value of calculation TE ＞ 1.5dB of computer represent that the optical device can not meet full temperature working range, if the value of calculation TE of computer≤1.5dB judges qualified.
The room temperature is 25 DEG C.
The high temperature is 85 DEG C.
The low temperature is -40 DEG C.
The temperature that high/low temperature circulating box is made after the completion of test is operated in 25 DEG C, and the door for opening high/low temperature circulating box takes out optical device.
After above-mentioned structures and methods, can conveniently, effectively, promptly be detected, the job stability and failure mode of a laser instrument are judged in advance, so as to substantially reducing the cycle of inspection and reducing the cost of inspection, simultaneously effective management and control is carried out to production process, product cost is preferably minimized, while having ensured the benefit of client, the method of its test is simple and convenient, the low cost that test system is built.
Description of the drawings
Fig. 1 is the structure schematic diagram of the test system of semiconductor laser of the present invention.
Specific embodiment
With reference to the accompanying drawings and detailed description, the test system of the semiconductor laser of the present invention is described in further detail.
As illustrated, the test system of the semiconductor laser of the present invention, it is characterised in that：Including optical device to be measured 2 and for placing optical device to be measured（Laser instrument）2 high/low temperature circulating box 1, optical device to be measured 2 is connected with the current source 3 that can be the offer electric current of optical device to be measured 2, optical device to be measured 2 can also test the light power meter 4 of its light power with one and be connected, and the output signal end of current source 3 and light power meter 4 is all connected on a computer 5.
The step of high/low temperature working environment of indication is the optical power change of -40 DEG C～85 DEG C device work, its detection method in the method for testing of the test system of the present embodiment semiconductor laser is as follows:
A:It is Po to make the light power of optical device to be measured to optical device to be measured 2 plus an operating current with current source 3 under 25 DEG C of room temperature, tests out the current back facet current Imo of optical device with current source 3 and records；
B:Optical device to be measured 2 is put in high/low temperature circulating box 1, high-low cycle case temperature is set to be operated in 85 DEG C, it is Imo to make back facet current to optical device to be measured 2 plus an operating current with current source 3 under 85 DEG C of high temperature, now tests current light power P1 of optical device with light power meter 4 and records；
C:Make high-low cycle case temperature be operated in -40 DEG C, it is Imo to add an operating current to make the back facet current of optical device to testing laser device with current source 3 under -40 DEG C of low temperature, now test current light power P2 of optical device with light power meter 4 and record；
D：The test number for recording is calculated the optical power change of optical device to be measured 2 under various state of temperatures using formula TE=10LOG (Pi/Po) using computer 5；The light power value of optical device when Pi is high temperature or low temperature in formula, the light power value of optical device when Po is room temperature；
For example：Optical power change TE=10LOG (P1/Po) of laser instrument at 85 DEG C of high temperature；Optical power change TE=10LOG (P2/Po) of laser instrument at -40 DEG C of low temperature.
E:If the value of calculation TE ＞ 1.5dB of computer represent that the optical device 2 can not meet -40 DEG C～85 DEG C of full temperature working range, if the value of calculation TE of computer≤1.5dB judges qualified.
The temperature that high/low temperature circulating box is made after the completion of test is operated in 25 DEG C, and the door for opening high/low temperature circulating box takes out optical device.
Claims (6)
1. a kind of test system of semiconductor laser, it is characterised in that：Including optical device to be measured（2）And for placing optical device to be measured（2）High/low temperature circulating box（1）, the optical device to be measured（2）Can be optical device to be measured with one（2）The current source of electric current is provided（3）Connection, the optical device to be measured（2）Also with a light power meter that can test its light power（4）Connection, the current source（3）And light power meter（4）Output signal end be all connected to a computer（5）On.
2. a kind of method of testing of the test system of semiconductor laser as claimed in claim 1, it is characterised in that comprise the following steps:
A:Current source is used at normal temperatures（3）To optical device to be measured（2）Plus it is Po that an operating current makes light power, tests its current back facet current Imo and records；
B:Current source is used at high temperature（3）To optical device to be measured（2）Plus it is Imo that an operating current makes back facet current, tests its current light power P1 and records；
C:Current source is used at low temperature（3）Add an operating current to make back facet current to testing laser device to be Imo, test its current light power P2 and record；
D：Using computer（5）The test number of record is calculated into optical device to be measured under various state of temperatures using formula TE=10LOG (Pi/Po)（2）Optical power change；
E:If the value of calculation TE ＞ 1.5dB of computer represent the optical device（2）Full temperature working range can not be met, if the value of calculation TE of computer≤1.5dB judges qualified.
3. according to the method for testing of the semiconductor laser described in claim 2, it is characterised in that：The room temperature is 25 DEG C.
4. according to the method for testing of the semiconductor laser described in claim 2, it is characterised in that：The high temperature is 85 DEG C.
5. according to the method for testing of the semiconductor laser described in claim 2, it is characterised in that：The low temperature is -40 DEG C.
6. according to the method for testing of the semiconductor laser described in claim 2, it is characterised in that：The temperature that high/low temperature circulating box is made after the completion of test is operated in 25 DEG C, and the door for opening high/low temperature circulating box takes out optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510740442.4A CN106644401A (en) | 2015-11-04 | 2015-11-04 | Test system and test method for testing semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510740442.4A CN106644401A (en) | 2015-11-04 | 2015-11-04 | Test system and test method for testing semiconductor laser |
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| CN106644401A true CN106644401A (en) | 2017-05-10 |
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| CN201510740442.4A Pending CN106644401A (en) | 2015-11-04 | 2015-11-04 | Test system and test method for testing semiconductor laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019228538A1 (en) * | 2018-05-28 | 2019-12-05 | 北京智芯微电子科技有限公司 | Performance testing system and testing method for rfid tags in conditions of high and low temperatures |
| CN110933535A (en) * | 2019-11-29 | 2020-03-27 | 四川天邑康和通信股份有限公司 | Automatic screening method based on optical power abnormity of PON optical module |
| CN111595558A (en) * | 2020-06-15 | 2020-08-28 | 江苏飞格光电有限公司 | Full-temperature automatic testing system and method for 5G/6G optical device |
| CN112924773A (en) * | 2021-01-20 | 2021-06-08 | 江苏亮点光电科技有限公司 | MOPA laser high-low temperature testing device and testing method thereof |
-
2015
- 2015-11-04 CN CN201510740442.4A patent/CN106644401A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019228538A1 (en) * | 2018-05-28 | 2019-12-05 | 北京智芯微电子科技有限公司 | Performance testing system and testing method for rfid tags in conditions of high and low temperatures |
| CN110933535A (en) * | 2019-11-29 | 2020-03-27 | 四川天邑康和通信股份有限公司 | Automatic screening method based on optical power abnormity of PON optical module |
| CN111595558A (en) * | 2020-06-15 | 2020-08-28 | 江苏飞格光电有限公司 | Full-temperature automatic testing system and method for 5G/6G optical device |
| CN112924773A (en) * | 2021-01-20 | 2021-06-08 | 江苏亮点光电科技有限公司 | MOPA laser high-low temperature testing device and testing method thereof |
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Application publication date: 20170510 |