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CN106200168B - 阵列基板及其制作方法、以及液晶显示面板 - Google Patents

阵列基板及其制作方法、以及液晶显示面板 Download PDF

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Publication number
CN106200168B
CN106200168B CN201610537100.7A CN201610537100A CN106200168B CN 106200168 B CN106200168 B CN 106200168B CN 201610537100 A CN201610537100 A CN 201610537100A CN 106200168 B CN106200168 B CN 106200168B
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China
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electrode
dielectric layer
layer
touching signals
grid line
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CN201610537100.7A
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CN106200168A (zh
Inventor
彭香艺
陈归
李亚锋
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201610537100.7A priority Critical patent/CN106200168B/zh
Priority to US15/127,389 priority patent/US20180188581A1/en
Priority to PCT/CN2016/095966 priority patent/WO2018006479A1/zh
Publication of CN106200168A publication Critical patent/CN106200168A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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    • G06F3/0412—Digitisers structurally integrated in a display
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)

Abstract

本发明公开了一种阵列基板及其制作方法、以及液晶显示面板。阵列基板包括：透明基板；栅极线，栅极线设置于透明基板上；触控信号线，触控信号线与栅极线同层设置于透明基板上；介质层，介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极，触控电极设置于介质层且经第一通孔与触控信号线电连接。通过以上方式，本发明能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。

Description

阵列基板及其制作方法、以及液晶显示面板
技术领域
本发明涉及液晶显示技术领域，特别是涉及一种阵列基板及其制作方法、以及液晶显示面板。
背景技术
触控(Touch)自问世以来已经成为当前手机最主流的功能，可以毫不客气的说，如果一个手机不具备touch功能，就不能称之为手机。Touch技术的分类有单片玻璃制程(OneGlass Solution，ogs)，将触摸面板功能嵌入到彩色滤光片基板和偏光板之间(on cell)及将触控面板功能嵌入到液晶像素中(in cell)等，现在开发的In cell Touch技术是将AA区的公共电极(Com)分成小区块作为触控电极，每个触控电极都有接收(Rx)信号线连接到芯片(IC)输出端的引脚(Pin)。这就需要有一层金属充当Rx信号线的功能，将IC输出的信号传输到每个触控电极。而且传统的低温多晶硅技术(Low Temperature Poly-silicon，LTPS)+触控面板(touch panel，TP)的液晶显示面板的In Cell像素薄膜晶体管(Thin FilmTransistor，TFT)处截面图结构参见图1，Com电极com分成小区块作为触控电极，金属层M3作为Rx信号线，如此，像素电极pixel和Com电极com之间需要存在两层绝缘层，即位于Com电极com和金属层M3之间的绝缘层PV1，以及位于金属层M3和像素电极pixel之间的绝缘层PV2。
发明内容
本发明实施例提供了一种阵列基板及其制作方法、以及液晶显示面板，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
本发明提供一种阵列基板，包括：透明基板；栅极线，栅极线设置于透明基板上；触控信号线，触控信号线与栅极线同层设置于透明基板上；介质层，介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极，触控电极设置于介质层且经第一通孔与触控信号线电连接。
其中，触控电极为公共电极和像素电极中的一者或组合。
其中，介质层在同一栅极线的两侧分别设置有第一通孔，进而使得公共电极经第一通孔桥接栅极线两侧的触控信号线。
其中，阵列基板进一步包括与像素电极同层设置的连接电极，介质层在同一栅极线的两侧进一步分别设置有第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。
其中，像素电极的所在层介于栅极线和触控信号线的所在层与公共电极的所在层之间。
其中，阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中第一介质层覆盖半导体图案层，栅极线和触控信号线设置于第一介质层上，第二介质层进一步覆盖栅极线和触控信号线，漏极和源极设置于第二介质层上且分别经设置于第一介质层和第二介质层上的第三通孔与半导体图案层的两端电连接，第三介质层覆盖源极和漏极，像素电极设置于第三介质层上且通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接，第四介质层覆盖像素电极，公共电极设置于第四介质层上。
本发明还提供一种阵列基板的制作方法，包括：在透明基板上设置栅极线和触控信号线，其中触控信号线与栅极线同层设置于透明基板上；设置覆盖栅极线和触控信号线的介质层，且在介质层上设置有第一通孔；在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接。
其中，触控电极为公共电极和像素电极中的一者或组合。
其中，在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接的步骤包括：设置连接电极与像素电极同层；在介质层上同一栅极线的两侧分别设置第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。
本发明还提供一种液晶显示面板，包括彩膜基板、前述阵列基板以及设置于彩膜基板与阵列基板之间的液晶层。
通过上述方案，本发明的有益效果是：本发明通过将触控信号线与栅极线同层设置于透明基板上；介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极设置于介质层且经第一通孔与触控信号线电连接，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中：
图1是现有技术的液晶显示装置的结构示意图；
图2是本发明第一实施例的液晶显示面板的结构示意图；
图3是本发明第一实施例的阵列基板的结构示意图；
图4是本发明第二实施例的液晶显示面板的结构示意图；
图5是本发明第二实施例的阵列基板的结构示意图；
图6是本发明实施例的阵列基板的制作方法的流程示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图2是本发明第一实施例的液晶显示面板的结构示意图。如图2所示，液晶显示面板10包括阵列基板11、彩膜基板12以及设置于彩膜基板12与阵列基板11之间的液晶层13。彩膜基板12包括玻璃基板120、设置在玻璃基板120上的黑色矩阵121以及滤光膜，滤光膜包括红色滤光膜123、绿色滤光膜124以及蓝色滤光膜125。彩膜基板12还设置有柱状隔垫物，包括主要柱状隔垫物(Main Post Spacer，Main PS)126和辅助柱状隔垫物(Sub PostSpacer，Sub PS)127。柱状隔垫物防止漏光，并且还可以对液晶层13起支撑作用。
参见图2和图3，阵列基板11包括：透明基板1100、设置于透明基板1100上的栅极线1101、与栅极线1101同层设置于透明基板1100上的触控信号线1102、覆盖栅极线1101和触控信号线1102的介质层，且介质层上设置有第一通孔1103，以及设置于介质层上且经第一通孔1103与触控信号线1102电连接的触控电极1104。其中，触控电极1104为公共电极。
阵列基板11进一步包括半导体图案层1104、第一介质层1105、第二介质层1106、漏极1107、源极1108、第三介质层1109和第四介质层1110。其中第一介质层1105覆盖半导体图案层1104，栅极线1101和触控信号线1102设置于第一介质层1105上，第二介质层1106进一步覆盖栅极线1101和触控信号线1102，漏极1107和源极1108设置于第二介质层1106上且分别经设置于第一介质层1105和第二介质层1106上的第三通孔1111与半导体图案层1104的两端电连接，第三介质层1109覆盖源极1108和漏极1107，像素电极1112设置于第三介质层1109上且通过设置于第三介质层1109上的第四通孔1113与源极1108和漏极1107中的一个电连接，第四介质层1110覆盖像素电极1112，公共电极1114设置于第四介质层1110上。在透明基板1100与半导体图案层1104之间还设置有遮光金属层1115和第五介质层1116。
在本发明实施例中，栅极线1101和触控信号线1102都是由第一金属(M1)制程制作而成。源极1108和漏极1107是由第二金属(M2)制程制作而成。触控信号线1102即为Rx信号线，由于触控电极1104为公共电极，对应地介质层包括第二介质层1106、第三介质层1109以及第四介质层1110，增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。介质层在同一栅极线1101的两侧分别设置有第一通孔1103，进而使得公共电极1114经第一通孔1103桥接栅极线1101两侧的触控信号线1102。如此就不需要另外制作第三金属(M3)来充当触控信号线，节省了一道光罩，并且如此像素电极1112和公共电极1114之间只需要一个介质层，即第四介质层1110，进而能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
图4是本发明第二实施例的液晶显示面板的结构示意图。液晶显示面板20包括阵列基板21、彩膜基板22以及设置于彩膜基板22与阵列基板21之间的液晶层23。彩膜基板22的结构与图2相同，在此不再赘述。
阵列基板21的结构参见图4和图5，阵列基板21包括：透明基板2100、设置于透明基板2100上的栅极线2101、与栅极线2101同层设置于透明基板2100上的触控信号线2102、覆盖栅极线2101和触控信号线2102的介质层，且介质层上设置有第一通孔2103，以及设置于介质层上且经第一通孔2103与触控信号线2102电连接的触控电极2104。
阵列基板21与阵列基板11的区别在于：触控电极2104为像素电极。对应地，介质层包括：第二介质层2106和第三介质层2109，增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。
像素电极2112的所在层介于栅极线2101和触控信号线2102的所在层与公共电极2114的所在层之间，通过设置于第三介质层2109上的第四通孔2113与源极2108和漏极2107中的一个电连接。阵列基板21进一步包括与像素电极2112同层设置的连接电极2104，介质层在同一栅极线2101的两侧进一步分别设置有第二通孔2103，进而使得连接电极2104经第二通孔2103桥接栅极线2101两侧的触控信号线2102。如此就不需要另外制作第三金属(M3)来充当触控信号线，节省了一道光罩，并且如此像素电极2112和公共电极2114之间只需要一个介质层，即第四介质层2110，进而能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
在本发明实施例中，触控电极可以为公共电极和像素电极中的一者或组合。即触控电极可以为公共电极(参见图2和图3)，或者为像素电极(参见图4和图5)，或者触控电极一部分为公共电极，一部分为像素电极。
图6是本发明实施例的阵列基板的制作方法的流程示意图。阵列基板的结构参见图2或图4。如图6所示，阵列基板的制作方法包括：
步骤S10：在透明基板上设置栅极线和触控信号线，其中触控信号线与栅极线同层设置于透明基板上。
在本发明实施例中，栅极线和触控信号线都是由第一金属(M1)制程同时制作而成。栅极线用作薄膜晶体管的栅极，而触控信号线作为触控电极的Rx信号线。在步骤S10中，在透明基板上还设置有遮光金属层。在遮光金属层设置第五介质层，半导体图案层设置在第五介质层上。在半导体图案层上设置第一介质层，栅极线和触控信号线设置在第一介质层上。栅极线设置在遮光金属层的正上方，而触控信号线的正下方没有设置遮光金属层。
步骤S11：设置覆盖栅极线和触控信号线的介质层，且在介质层上设置有第一通孔。
在步骤S11中，在栅极线和触控信号线上设置第二介质层，在第二介质层上设置漏极和源极，且分别经设置于第一介质层和第二介质层上的第三通孔与半导体图案层的两端电连接。设置第三介质层覆盖源极和漏极。
步骤S12：在介质层上设置触控电极，触控电极经第一通孔与触控信号线电连接。
触控电极为公共电极和像素电极中的一者或组合。触控电极为像素电极时，介质层包括第二介质层和第三介质层。此时，在步骤S12中，在第三介质层上设置像素电极，亦即触控电极。像素电极通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接，触控电极经第一通孔与触控信号线电连接。因此第一通孔穿过第二介质层和第三介质层。然后设置第四介质层于像素电极上，并在第四介质层上设置公共电极，完成阵列基板的制作。
在本发明实施例中，不管触控电极为公共电极或像素电极，或两者的组合，触控电极与触控信号线之间的介质层至少为第二介质层和第三介质层，而公共电极与像素电极之间的介质层为第四介质层。也就是说，本发明实施例增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。由于Rx信号线直接通过与栅极线同层设置的触控信号线实现，如此就不需要另外制作第三金属(M3)来充当触控信号线，节省了一道光罩。并且在像素电极和公共电极之间减少了一个介质层，进而能够增加存储电容，使得在高分辨率下像素能充足电。
触控电极为公共电极时，介质层包括第二介质层、第三介质层以及第四介质层，进一步增加了触控电极与Rx信号线之间的介质层厚度，进而降低了触控电极与Rx信号线之间的耦合电容。此时，在步骤S11中，还在第三介质层上设置像素电极，且通过设置于第三介质层上的第四通孔与源极和漏极中的一个电连接。再设置第四介质层覆盖像素电极。在步骤S12中，触控电极和公共电极设置于第四介质层上。触控电极经第一通孔与触控信号线电连接。因此第一通孔穿过第二介质层、第三介质层以及第四介质层。
在触控电极为公共电极时，在设置像素电极时，还可以设置连接电极与像素电极同层；在介质层上同一栅极线的两侧分别设置第二通孔，进而使得连接电极经第二通孔桥接栅极线两侧的触控信号线。此时第二通孔穿过第二介质层和第三介质层。
综上所述，本发明通过将触控信号线与栅极线同层设置于透明基板上；介质层覆盖栅极线和触控信号线且设置有第一通孔；触控电极设置于介质层且经第一通孔与触控信号线电连接，能够增加存储电容，使得在高分辨率下像素能充足电，同时降低了触控电极与Rx信号线之间的耦合电容。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (5)

1.一种阵列基板，其特征在于，所述阵列基板包括：
透明基板；
栅极线，所述栅极线设置于所述透明基板上；
触控信号线，所述触控信号线与所述栅极线同层设置于所述透明基板上；
介质层，所述介质层覆盖所述栅极线和所述触控信号线且设置有第一通孔；
触控电极，所述触控电极设置于所述介质层上且经所述第一通孔与所述触控信号线电连接；
其中，所述触控电极为像素电极，或者所述触控电极为公共电极和像素电极的组合；所述像素电极的所在层介于所述栅极线和所述触控信号线的所在层与所述公共电极的所在层之间；
所述阵列基板进一步包括与所述像素电极同层设置的连接电极，所述介质层在同一所述栅极线的两侧进一步分别设置有第二通孔，进而使得所述连接电极经所述第二通孔桥接所述栅极线两侧的所述触控信号线。
2.根据权利要求1所述的阵列基板，其特征在于，所述介质层在同一所述栅极线的两侧分别设置有所述第一通孔，进而使得所述公共电极经所述第一通孔桥接所述栅极线两侧的所述触控信号线。
3.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板进一步包括半导体图案层、第一介质层、第二介质层、漏极、源极、第三介质层和第四介质层，其中所述第一介质层覆盖所述半导体图案层，所述栅极线和所述触控信号线设置于所述第一介质层上，所述第二介质层进一步覆盖所述栅极线和所述触控信号线，所述漏极和源极设置于所述第二介质层上且分别经设置于所述第一介质层和所述第二介质层上的第三通孔与所述半导体图案层的两端电连接，所述第三介质层覆盖所述源极和漏极，所述像素电极设置于所述第三介质层上且通过设置于所述第三介质层上的第四通孔与所述源极和所述漏极中的一个电连接，所述第四介质层覆盖所述像素电极，所述公共电极设置于所述第四介质层上。
4.一种阵列基板的制作方法，其特征在于，所述方法包括：
在透明基板上设置栅极线和触控信号线，其中所述触控信号线与所述栅极线同层设置于所述透明基板上；
设置覆盖所述栅极线和所述触控信号线的介质层，且在所述介质层上设置有第一通孔；
在所述介质层上设置触控电极，所述触控电极经所述第一通孔与所述触控信号线电连接；
所述方法进一步包括：
在所述栅极线和所述触控信号线的所在层与公共电极的所在层之间设置像素电极；
其中，所述触控电极为所述像素电极，或者所述触控电极为所述公共电极和所述像素电极的组合；
所述在所述介质层上设置触控电极，所述触控电极经所述第一通孔与所述触控信号线电连接的步骤包括：
设置连接电极与所述像素电极同层；
在所述介质层上同一所述栅极线的两侧分别设置第二通孔，进而使得所述连接电极经所述第二通孔桥接所述栅极线两侧的所述触控信号线。
5.一种液晶显示面板，其特征在于，所述液晶显示面板包括彩膜基板、权利要求1-3任一项所述阵列基板以及设置于所述彩膜基板与所述阵列基板之间的液晶层。
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