CN106129212A - Formal dress flip LED chip packaging body, method for packing and application thereof - Google Patents
Formal dress flip LED chip packaging body, method for packing and application thereof Download PDFInfo
- Publication number
- CN106129212A CN106129212A CN201610712869.8A CN201610712869A CN106129212A CN 106129212 A CN106129212 A CN 106129212A CN 201610712869 A CN201610712869 A CN 201610712869A CN 106129212 A CN106129212 A CN 106129212A
- Authority
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- Prior art keywords
- electrode
- led chip
- packaging body
- formal dress
- chip
- Prior art date
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- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000012856 packing Methods 0.000 title claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000006071 cream Substances 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 11
- 206010054949 Metaplasia Diseases 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000015689 metaplastic ossification Effects 0.000 abstract description 4
- 241000218202 Coptis Species 0.000 description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
nullThe invention discloses a kind of formal dress flip LED chip packaging body、Method for packing and application thereof，It circuit base plate including being located at bottom、Epitaxial chip、And fluorescent coating，Conductive silver glue or tin cream it is printed with on described circuit base plate，Epitaxial chip has transparent substrates、N electron layer and P electronic shell，N electron layer is located in transparent substrates，This N electron layer has high-end and low side，Described P electronic shell be located at this N electron layer high-end on，This P electronic shell is provided with P electrode，The low side of N electrode is provided with N electrode，The top of this P electrode is concordant with the top of N electrode，The area of P electrode and N electrode accounts for the 1/8 1/3 of this epitaxial chip light shield area respectively，The P electrode of this epitaxial chip and N electrode flip are on the conductive silver glue or tin cream of circuit base plate，Described fluorescent coating is covered in the transparent substrates top of circuit base plate and epitaxial chip.Processing procedure of the present invention is simple, and heat conductivity is good, and packaging cost is relatively low, can be beneficial to rapid, high volume metaplasia and produce.
Description
Technical field
The present invention relates to the technical field of a kind of light emitting diode, particularly relate to the encapsulation of a kind of formal dress flip LED chip carry,
Packaging technology and application thereof.
Background technology
At present, the common chip within LED lamp has two kinds, and one is positive cartridge chip, and another kind is flip-chip.
Up, material is formal dress chip electrode from top to bottom: P electrode, luminescent layer, N electrode, substrate.Existing formal dress
LED chip needs to carry out gold thread welding processing procedure, and its cost is high, and processing procedure can cause the easy rosin joint of gold thread because of expanding with heat and contract with cold of encapsulation
Open circuit, gold thread shading luminosity is relatively low, simultaneously because the solder joint of gold thread is less, heat conductivity can be made poor.
In order to improve the luminous efficiency of chip, technical staff have developed flip-chip.The substrate of flip-chip is stripped, core
Sheet material is transparent, and the light making luminescent layer inspire directly sends from the another side of electrode.Although flip-chip is imitated in luminescence
There is advantage in rate, but the price of flip-chip is higher, the technique preparing LED filament is the most more complicated, causes the big of production cost
Width rises.
At present, some existing formal dress are inverted the LED of chip on the market, and it needs first to carry out stannum at circuit and chip electrode
Cream point postwelding polishes, simultaneously because chip electrode face is little, such spot welding process rate uniformity is the highest, and when attaching, holds very much
Easily occur tin cream and electrode points not in contact with situation, cause cannot turning between chip and circuit, and then cause LED chip to go out
Occurrence product, still make production cost be difficult to reduce, and additionally this processing procedure is more time-consuming, unfavorable a large amount of productions.
In view of this, the design people designs for above-mentioned LED chip and does not attains perfect caused many disappearances and inconvenience,
And deeply conceive, and actively research improvement has a fling at and develops and design the present invention.
Summary of the invention
It is an object of the invention to provide a kind of processing procedure simple, heat conductivity is good, and packaging cost is relatively low, can be beneficial to rapid, high volume
Formal dress flip LED chip packaging body, method for packing and the application thereof that metaplasia is produced.
In order to reach above-mentioned purpose, the solution of the present invention is:
A kind of formal dress flip LED chip packaging body, it circuit base plate, epitaxial chip and fluorescent coating of including being located at bottom, institute
Stating and be printed with conductive silver glue or tin cream on circuit base plate, described epitaxial chip has transparent substrates, N electron layer and P electronic shell, institute
Stating N electron layer to be located in transparent substrates, this N electron layer has high-end and low side, and described P electronic shell is located at the height of this N electron layer
On end, this P electronic shell is provided with P electrode, and the low side of N electrode is provided with N electrode, the top of this P electrode and the top flat of N electrode
Together, the area of described P electrode and described N electrode accounts for the 1/8-1/3 of this epitaxial chip light shield area, the P of this epitaxial chip respectively
Electrode and N electrode flip are on the conductive silver glue or tin cream of circuit base plate, and described fluorescent coating is covered in circuit base plate and extension
The transparent substrates top of chip.
Further, described N electrode and P electrode are square.
Further, the material of described N electrode and P electrode is metal: any one in gold, silver, nickel, aluminum.
A kind of such as the application of described formal dress flip LED chip packaging body, this formal dress flip LED chip packaging body is applied to a little
Any one in shape light source, strip-shaped light source or flat light source.
The method for packing of a kind of formal dress flip LED chip packaging body, comprises the following steps:
A: on the line width pad of transparency carrier correspondence LED chip size, carry out the coating of elargol or tin cream, elargol or stannum
The coated area of cream is the 1/8-1/3 of epitaxial chip light shield area；
B: utilize bonder extension to weigh chip flip on the circuit that corresponding para-position scribbles elargol or tin cream, this epitaxial chip
The electrode area of P electrode and N electrode is the 1/8-1/3 of this epitaxial chip light shield area；
C: carry out the laminating of preforming support；
D: carry out reflow or baking；
E: carry out the coating of fluorescent material；
F: toast；
G: substrate baking completed cuts.
Further, in step B, described elargol or tin cream are to be coated on substrate by the way of printing or coating.
Further, in step E, F, the coating of described fluorescent material is to utilize pad pasting pressing, thermal transfer, some glue, film top or print
Any one mode in brush.
Further, in step G, described baking is to utilize infrared ray or intelligence control baking box to toast.
Further, in step H, described cutting is to utilize laser or diamond cutter cutting machine to cut.
After using said structure, formal dress flip LED chip packaging body of the present invention, method for packing and application are mainly by spy
The epitaxial chip adding large electrode that do not designs and this epitaxial chip is had a termination electrode of electrode altitude difference carry out electric polarization plating
Gold processing procedure, allows epitaxial chip electrode have bigger area and sustained height, and so directly utilizing mode of printing can be quick
The connecting material of conduction being covered with, increase processing procedure summary, the large electrode of chip coordinates simultaneously, solves the encapsulation of existing formal dress
Processing procedure is complicated, and the shortcoming such as heat conduction is poor, and can be beneficial to rapid, high volume metaplasia and produce, and constructing with the small electrode of existing chip needs gold
The packaged type of wire bonding is entirely different.
Accompanying drawing explanation
Fig. 1 is the front view of epitaxial chip of the present invention.
Fig. 2 is the side view of epitaxial chip of the present invention.
Fig. 3 is the side view of circuit base plate of the present invention.
Fig. 4 is the top view of circuit base plate of the present invention.
Fig. 5 is the partial enlarged drawing of Fig. 4.
Fig. 6 is the side view that the present invention prints elargol or tin cream on circuit base plate.
Fig. 7 is the local top perspective view of Fig. 6.
Fig. 8 is the side view of flip epitaxial chip of the present invention.
Fig. 9 is the local top perspective view of Fig. 8.
Figure 10 is the side view that the present invention covers fluorescent coating.
Figure 11 is the close-up schematic view of Figure 10.
Detailed description of the invention
In order to technical scheme is explained further, below by specific embodiment, the present invention is explained in detail
State.
As shown in Figure 1 to 11, present invention is disclosed a kind of formal dress flip LED chip packaging body, it includes having circuit
The substrate 1(of 11 is as shown in Figures 3 to 5), epitaxial chip 2(as shown in Figures 1 and 2) and fluorescent coating 3(such as Figure 10 and Figure 11
Shown in), described circuit base plate 1 is printed with conductive silver glue or tin cream 4, described epitaxial chip 2 has transparent substrates 21, N electron
Layer 22 and P electronic shell 23, described N electron layer 22 is located in transparent substrates 21, and this N electron layer 22 has high-end and low side, described P
Electronic shell 23 be located at this N electron layer 22 high-end on, this P electronic shell 23 is provided with P electrode 231, and the low side of N electrode 221 sets
Having N electrode 221, the top of this P electrode 231 is concordant with the top of N electrode 221, as it can be seen, N electrode 221 and P electrode 231 can
Arrange in diagonal, and the most square, the material of described N electrode 221 and P electrode 231 is metal: in gold, silver, nickel, aluminum
Any one, electrode 221,231 position and shape are set, be not limited thereto, described P electrode 231 and described N electrode 221
Area account for the 1/8-1/3 of this epitaxial chip 2 light shield area, the P electrode 231 of this epitaxial chip 2 and N electrode 221 flip respectively
On the conductive silver glue or tin cream 4 of circuit base plate 1, described fluorescent coating 3 is covered in the transparent of circuit base plate 1 and epitaxial chip 2
Substrate 21 top.
Above-mentioned formal dress flip LED chip packaging body can be applicable to point source of light (single led chip packing-body), strip-shaped light source
(i.e. multiple LED chip packaging bodies are in line by linear light sorurce) or flat light source are (many according to different permutation and combination form multirows
Row, send the light of variously-shaped, form a face).
The method for packing of a kind of formal dress flip LED chip packaging body, comprises the following steps:
A: on the line width pad of transparency carrier correspondence LED chip size, carry out the coating of elargol or tin cream, elargol or stannum
The coated area of cream is the 1/8-1/3 of epitaxial chip light shield area；
B: utilize bonder by epitaxial chip flip on the circuit that corresponding para-position scribbles elargol or tin cream, the P of this epitaxial chip
The electrode area of electrode and N electrode is the 1/8-1/3 of this epitaxial chip light shield area；
C: carry out the laminating of preforming support；
D: carry out reflow or baking；
E: carry out the coating of fluorescent material；
F: toast；
G: substrate baking completed cuts.
In step B, described elargol or tin cream are to be coated on substrate by the way of printing or coating.
In step F, the coating of described fluorescent material be utilize pad pasting pressing, thermal transfer, some glue, film top or printing in any
A kind of mode.
In step G, described baking is to utilize infrared ray or intelligence control baking box to toast.
In step H, described cutting is to utilize laser or diamond cutter cutting machine to cut.
Formal dress flip LED chip packaging body of the present invention, method for packing strengthen electricity with application mainly by specially designed
The epitaxial chip of pole and this epitaxial chip is had a termination electrode of electrode altitude difference carry out the gold-plated processing procedure of electric polarization, allows extension core
Plate electrode has bigger area and sustained height, and so directly utilizing mode of printing can be quickly by the connecting material of conduction
Being covered with, increase processing procedure summary, the large electrode of chip coordinates simultaneously, and the cost solving existing encapsulation is high, and processing procedure is complicated, and leads
The shortcomings such as heat is poor, and rapid, high volume metaplasia product can be beneficial to, construct, with the small electrode of existing chip, the encapsulation needing gold thread to weld
Mode is entirely different.
Above-described embodiment and the product form of the graphic and non-limiting present invention and style, any art common
Technical staff is suitably changed what it did or modifies, and all should be regarded as the patent category without departing from the present invention.
Claims (8)
1. a formal dress flip LED chip packaging body, it circuit base plate, epitaxial chip and fluorescent coating of including being located at bottom,
Being printed with conductive silver glue or tin cream on described circuit base plate, described epitaxial chip has transparent substrates, N electron layer and P electronic shell,
Described N electron layer is located in transparent substrates, and this N electron layer has high-end and low side, and described P electronic shell is located at this N electron layer
On high-end, this P electronic shell is provided with P electrode, and the low side of N electrode is provided with N electrode, the top of this P electrode and the top of N electrode
Concordant, the area of described P electrode and described N electrode accounts for the 1/8-1/3 of this epitaxial chip light shield area respectively, this epitaxial chip
P electrode and N electrode flip are on the conductive silver glue or tin cream of circuit base plate, and described fluorescent coating is covered in circuit base plate and extension
The transparent substrates top of chip.
2. formal dress flip LED chip packaging body as claimed in claim 1, it is characterised in that: described N electrode and the material of P electrode
Material is for metal: any one in gold, silver, nickel, aluminum.
3. the application of a formal dress flip LED chip packaging body as claimed in claim 1, it is characterised in that: this formal dress flip
LED chip packaging body is applied to any one in point source of light, strip-shaped light source or flat light source.
4. a method for packing for formal dress flip LED chip packaging body as claimed in claim 1, comprises the following steps:
A: on the line width pad of transparency carrier correspondence LED chip size, carry out the coating of elargol or tin cream, elargol or stannum
The coated area of cream is the 1/8-1/3 of epitaxial chip light shield area；
B: utilize bonder by epitaxial chip flip on the circuit that corresponding para-position scribbles elargol or tin cream, the P of this epitaxial chip
The electrode area of electrode and N electrode is the 1/8-1/3 of this epitaxial chip light shield area；
C: carry out the laminating of preforming support；
D: carry out reflow or baking；
E: carry out the coating of fluorescent material；
F: toast；
G: substrate baking completed cuts.
5. the method for packing of formal dress flip LED chip packaging body as claimed in claim 4, it is characterised in that: in step B, institute
State elargol or tin cream is to be coated on substrate by the way of printing or coating.
6. the method for packing of formal dress flip LED chip packaging body as claimed in claim 4, it is characterised in that: in step E, F,
The coating of described fluorescent material is to utilize any one mode in pad pasting pressing, thermal transfer, some glue, film top or printing.
7. the method for packing of formal dress flip LED chip packaging body as claimed in claim 4, it is characterised in that: in step G, institute
Stating baking is to utilize infrared ray or intelligence control baking box to toast.
8. the method for packing of formal dress flip LED chip packaging body as claimed in claim 4, it is characterised in that: in step H, institute
Stating cutting is to utilize laser or diamond cutter cutting machine to cut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610712869.8A CN106129212A (en) | 2016-08-24 | 2016-08-24 | Formal dress flip LED chip packaging body, method for packing and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610712869.8A CN106129212A (en) | 2016-08-24 | 2016-08-24 | Formal dress flip LED chip packaging body, method for packing and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106129212A true CN106129212A (en) | 2016-11-16 |
Family
ID=57274178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610712869.8A Pending CN106129212A (en) | 2016-08-24 | 2016-08-24 | Formal dress flip LED chip packaging body, method for packing and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129212A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784266A (en) * | 2016-12-26 | 2017-05-31 | 南京琦光光电科技有限公司 | Colour developing high, the uniform LED white chips of light, filament and manufacture method |
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| CN1779999A (en) * | 2004-11-24 | 2006-05-31 | 杨秋忠 | Integrated light emitting diode and production thereof |
| CN102779923A (en) * | 2012-07-09 | 2012-11-14 | 厦门飞德利照明科技有限公司 | Manufacturing method of patch type LED (Light-Emitting Diode) module |
| CN103325776A (en) * | 2012-03-22 | 2013-09-25 | 光芯科技股份有限公司 | Light emitting device |
| CN103682043A (en) * | 2013-11-28 | 2014-03-26 | 天津金玛光电有限公司 | Die bonding method for horizontal LED chips and LED light source manufactured by die bonding method |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN104851961A (en) * | 2015-03-24 | 2015-08-19 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
| CN206003809U (en) * | 2016-08-24 | 2017-03-08 | 厦门忠信达工贸有限公司 | Formal dress flip LED chip packaging body and its application |
-
2016
- 2016-08-24 CN CN201610712869.8A patent/CN106129212A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779999A (en) * | 2004-11-24 | 2006-05-31 | 杨秋忠 | Integrated light emitting diode and production thereof |
| CN103325776A (en) * | 2012-03-22 | 2013-09-25 | 光芯科技股份有限公司 | Light emitting device |
| CN102779923A (en) * | 2012-07-09 | 2012-11-14 | 厦门飞德利照明科技有限公司 | Manufacturing method of patch type LED (Light-Emitting Diode) module |
| CN103682043A (en) * | 2013-11-28 | 2014-03-26 | 天津金玛光电有限公司 | Die bonding method for horizontal LED chips and LED light source manufactured by die bonding method |
| CN103943763A (en) * | 2014-03-28 | 2014-07-23 | 晶丰电子封装材料（武汉）有限公司 | Packaging structure and method for flip LED chip |
| CN104851961A (en) * | 2015-03-24 | 2015-08-19 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784266A (en) * | 2016-12-26 | 2017-05-31 | 南京琦光光电科技有限公司 | Colour developing high, the uniform LED white chips of light, filament and manufacture method |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161116 |