CN106024906A - Thin film transistor, display substrate and liquid crystal display device - Google Patents
Thin film transistor, display substrate and liquid crystal display device Download PDFInfo
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- CN106024906A CN106024906A CN201610565661.8A CN201610565661A CN106024906A CN 106024906 A CN106024906 A CN 106024906A CN 201610565661 A CN201610565661 A CN 201610565661A CN 106024906 A CN106024906 A CN 106024906A
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- 239000010409 thin film Substances 0.000 title claims abstract description 101
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 10
- 239000012212 insulator Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 13
- 238000010304 firing Methods 0.000 description 9
- 230000005611 electricity Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
The application provides a thin film transistor, a display substrate and a liquid crystal display device in order to improve the on current of thin film transistors and reduce the off current of thin film transistors. The thin film transistor provided by the application comprises a gate, a gate insulating layer and an active layer which are arranged on a substrate in sequence, and further comprises a source arranged on the active layer, and a drain arranged between the gate insulating layer and the active layer.
Description
Technical field
The application relates to field of liquid crystal display, particularly relates to a kind of thin film transistor (TFT), display base plate and liquid crystal
Display device.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display,
TFT-LCD) there is the features such as volume is little, low in energy consumption, radiationless, manufacturing cost is relatively low, currently
Flat panel display market occupy leading position.
The bottom gate thin film transistor of prior art TFT-LCD generally includes and is sequentially located on underlay substrate
Grid, gate insulator, active layer, source electrode and drain electrode, wherein, source electrode is generally arranged at drain electrode
Same layer.When grid adds high level, the electronics of active layer would generally move down, near grid side
Surface formed electron conducting layer, the electronics of source electrode via active layer conductive layer so that arrive drain electrode, and then
Realize the conducting of thin film transistor (TFT).
But the thin film transistor (TFT) of prior art, I-on is relatively low for its firing current, closes electric current I-off relatively greatly,
And it is unfavorable for that display panels develops to high-resolution direction.
Summary of the invention
The purpose of the application is to provide a kind of thin film transistor (TFT), display base plate and liquid crystal indicator, to carry
The firing current I-on of high thin film transistor (TFT), reduces the closedown electric current I-off of thin film transistor (TFT).
The purpose of the application is achieved through the following technical solutions:
The embodiment of the present application one provides a kind of thin film transistor (TFT), including: it is set in turn on underlay substrate
Grid, gate insulator and active layer, also include: is arranged at the source electrode of described active layer, Yi Jishe
It is placed in the drain electrode between described gate insulator and described active layer.
The thin film transistor (TFT) that the embodiment of the present application one provides is bottom gate thin film transistor, and this thin film transistor (TFT) exists
It is provided with grid on underlay substrate, on grid, is provided with gate insulator, on gate insulator
Being provided with active layer, wherein, source electrode is arranged at active layer, and drains and be arranged at gate insulator and have
Between active layer, source electrode and drain electrode lay respectively at different layers, when the grid of film crystal adds high level, active
Electronics within Ceng moves to the surface relative with grid, and forms electron conducting layer in this face, and then permissible
Make the electronics of source electrode after part active layer corresponding immediately below source electrode, can be by the conduction formed
Layer directly arrives mobile drain electrode, i.e. can make electronics during arriving and draining, without prior art
In the 3rd path, shorten the mobile route of electronics, and then make the bottom gate type that the embodiment of the present application one provides
The bottom gate thin film transistor of thin film transistor (TFT) hinge structure, can have higher firing current, keep away
Exempted from electronics when arriving corresponding part active layer immediately below drain electrode, also need to from active layer with grid phase
To surface be diffused to the surface opposing with grid；And when grid is in low level, in active layer
Hole is moved to the surface relative with grid of active layer, makes the electronics within active layer and hole distribution equal
Even, thin film transistor (TFT) conducts electricity hardly, makes thin film transistor (TFT) have relatively low closedown electric current, and then can keep away
Exempt from the thin film transistor (TFT) of prior art, owing to the surface opposing with grid at active layer exists a small amount of electronics,
Can make to be formed between source electrode and drain electrode galvanic circle, make the thin film transistor (TFT) of prior art exist and close electric current relatively
High problem.
The embodiment of the present application two provides a kind of thin film transistor (TFT), including: it is set in turn on underlay substrate
Active layer, gate insulator and grid, also include: is arranged between described underlay substrate and described active layer
Source electrode, and be arranged at the drain electrode between described active layer and described gate insulator.
The thin film transistor (TFT) that the embodiment of the present application two provides is top gate type thin film transistor, and this thin film transistor (TFT) exists
It is provided with active layer on underlay substrate, active layer is provided with gate insulator, at gate insulator
On be provided with grid, wherein, source electrode is arranged between underlay substrate and active layer, and drain be arranged at
Between active layer and gate insulator, source electrode and drain electrode lay respectively at different layers, and the grid at film crystal is increased
During level, the electronics within active layer moves to the surface relative with grid, and leads at this surface formation electronics
Electric layer, so can make the electronics of source electrode after part active layer corresponding directly over source electrode, can
To be moved directly to drain electrode by the conductive layer formed, i.e. shorten the mobile route of electronics, and then make this Shen
Please the top gate type thin film transistor of top gate type thin film transistor hinge structure that provides of embodiment two, permissible
There is higher firing current, relative to top gate type thin film transistor of the prior art, electronics can be avoided
When arriving part active layer corresponding directly over drain electrode, also need to be from the surface relative with grid of active layer
It is diffused to the surface opposing with grid；And when grid is in low level, the hole in active layer is to having
The surface relative with grid of active layer is moved, and makes the electronics within active layer and hole distribution uniform, this top-gated
Type thin film transistor (TFT) conducts electricity hardly, makes thin film transistor (TFT) have relatively low closedown electric current, and then can avoid
The top gate type thin film transistor of prior art, owing to the surface opposing with grid at active layer exists a small amount of electricity
Son, can make to be formed between source electrode and drain electrode galvanic circle, make the top gate type thin film transistor of prior art exist
Close the problem that electric current is higher.
Preferably, the thin film transistor (TFT) provided for the embodiment of the present application two, described thin film transistor (TFT) also wraps
Including light shield layer, described light shield layer is between described underlay substrate and described active layer, and described source electrode is positioned at institute
Stating between light shield layer and described active layer, wherein, described active layer upright projection on underlay substrate is positioned at
In described light shield layer upright projection on underlay substrate.
In the embodiment of the present application, the upright projection of described light shield layer covers the upright projection of described active layer,
Can avoid active layer that thin film transistor (TFT) can be caused when by illumination to be closed the problem that electric current is bigger.
Preferably, the thin film transistor (TFT) that the embodiment of the present application one and the embodiment of the present application two are provided, institute
State and between source electrode and described active layer, be additionally provided with the first ohmic contact layer, described drain electrode and described active layer it
Between be additionally provided with the second ohmic contact layer.
Preferably, the material of described first ohmic contact layer and described second ohmic contact layer is that N-shaped doping is non-
Crystal silicon N+a-si.
Preferably, the thin film transistor (TFT) that the embodiment of the present application one and the embodiment of the present application two are provided, institute
Stating drain electrode to be also connected with partial pixel electrode, it is exhausted with described grid that described partial pixel electrode is positioned at described drain electrode
Between edge layer.
Preferably, the material of described active layer be non-crystalline silicon a-si, p-type doped silicon p-Si or metal-oxide.
The embodiment of the present application three provides a kind of display base plate, including the embodiment of the present application one or the embodiment of the present application
The two described thin film transistor (TFT)s provided.
The embodiment of the present application four provides a kind of liquid crystal indicator, including the institute provided such as the embodiment of the present application three
The display base plate stated.
Accompanying drawing explanation
Fig. 1 is the structural representation of the bottom gate thin film transistor of prior art；
The structural representation of a kind of bottom gate thin film transistor that Fig. 2 provides for the embodiment of the present application one；
The structural representation of the another kind of bottom gate thin film transistor that Fig. 3 provides for the embodiment of the present application one；
The structural representation of a kind of top gate type thin film transistor that Fig. 4 provides for the embodiment of the present application two；
The top gate type thin film crystal of light shield layer it is provided with on the underlay substrate that Fig. 5 provides for the embodiment of the present application two
The structural representation of pipe；
The structural representation of the another kind of top gate type thin film transistor that Fig. 6 provides for the embodiment of the present application two；
It is brilliant with the bottom gate thin film of prior art that Fig. 7 implements the bottom gate thin film transistor of an offer for the application
I-on and I-off of body pipe compares schematic diagram.
Detailed description of the invention
Below in conjunction with Figure of description, the embodiment of the present application is realized process to be described in detail.Should be noted that
, the most same or similar label represents same or similar element or has same or like merit
The element of energy.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining the application,
And it is not intended that restriction to the application.
Fig. 1 show the bottom gate thin film transistor structural representation of prior art TFT-LCD, wherein,
This thin film transistor (TFT) is provided with grid 2 on underlay substrate 1, is provided with gate insulator on grid 2
3, on gate insulator 3, it is provided with active layer 4, on active layer 4, is provided with source electrode 5 and drain electrode
6, it is additionally provided with the first Ohmic contact improving its contact resistance therebetween between source electrode 5 and active layer 4
Layer 7, is additionally provided with between drain electrode 6 and active layer 4 and improves second ohm of its contact resistance therebetween and connect
Contact layer 8.Drain electrode 6 is typically also connected with pixel electrode 9.
Wherein, the thin film transistor (TFT) of prior art, its source electrode 5 is generally located on same layer with drain electrode 6,
When the grid 2 of thin film transistor (TFT) adds high level, the electronics of active layer 4 moves to the lower surface relative with grid 2
Dynamic, the lower surface at active layer 4 forms electron conducting layer.The electronics drain electrode to be arrived 6 of source electrode 5, generally
At least need through three sections of paths, i.e. moved to the following table relative with grid 2 of active layer 4 by source electrode 5
Face, for first path, as shown in arrow AB in figure；Inside active layer 4, along the electronic conduction formed
Layer, is moved to and the 6 corresponding one end that drain by one end corresponding with source electrode 5, is the second path, in figure
Shown in arrow CD；Then, below drain electrode 6, by the diffusion into the surface relative with grid 2 of active layer 4
To the surface opposing with grid 2 and arrive drain electrode 6, it is the 3rd path, as shown in arrow EF in figure.Thin
The electronics of film transistor during being arrived drain electrode by source electrode, the more motion path of process would generally
Make the firing current I-on of thin film transistor (TFT) relatively low.It addition, thin film transistor (TFT) of the prior art, having
The surface opposing with grid 2 of active layer 4 usually there will be a small amount of electron accumulation, can make source electrode 5 and leakage
Pole 6 forms galvanic circle, makes the closedown electric current I-off of thin film transistor (TFT) bigger.Relatively low firing current and
Higher closedown electric current limits display panels to be developed to high-resolution direction.
The firing current I-on existed for prior art TFT is relatively low, closes electric current I-off bigger
Problem, the embodiment of the present application one, it is provided that a kind of thin film transistor (TFT), as in figure 2 it is shown, include: set successively
It is placed in the grid 12 on underlay substrate 11, gate insulator 13 and active layer 14, this thin film transistor (TFT)
Also include: be arranged at the source electrode 15 on active layer 14, and be arranged at gate insulator 13 and active layer
Drain electrode 16 between 14.Wherein, drain electrode 16 is typically also connected with partial pixel electrode 19, so that thin film
The electrical signal of source electrode 15, when conducting, can be transferred to pixel electrode 19, so that pixel is electric by transistor
Pole 19 shows accordingly.Certainly, pixel electrode 19 also includes rest of pixels electrode part, with drain electrode 16
The partial pixel electrode connected and rest of pixels electrode part collectively form the pixel electrode 19 of entirety.
The thin film transistor (TFT) that the embodiment of the present application one provides is bottom gate thin film transistor, and this thin film transistor (TFT) exists
It is provided with grid 12 on underlay substrate 11, on grid 12, is provided with gate insulator 13, at grid
Being provided with active layer 14 on pole insulating barrier 13, wherein, source electrode 15 is arranged on active layer 14, and
Drain electrode 16 is arranged between gate insulator 13 and active layer 14, and source electrode 15 lays respectively at drain electrode 16
Different layers, when the grid 12 of film crystal adds high level, the electronics within active layer 14 to grid 12
Relative surface is moved, and forms electron conducting layer in this face, and then the electronics of source electrode 15 can be made at warp
After crossing part active layer 14 corresponding immediately below source electrode 15, directly can be arrived by the conductive layer formed
Mobile drain electrode 16, i.e. can make electronics during arriving drain electrode 16, without of the prior art
3rd path, shortens the mobile route of electronics, and then makes the bottom gate thin film that the embodiment of the present application one provides
The bottom gate thin film transistor of transistor hinge structure, can have higher firing current, it is to avoid
The electronics of the thin film transistor (TFT) of prior art arrives part active layer 14 corresponding immediately below drain electrode 16
Time, also need to expand to the surface opposing with grid 12 from the surface relative with grid 12 of active layer 14
The problem dissipated；And when grid 12 is in low level, the hole in active layer 14 to active layer 14 with
The surface that grid 12 is relative is moved, and makes the electronics within active layer 14 and hole distribution uniform, film crystal
Pipe conducts electricity hardly, makes thin film transistor (TFT) have relatively low closedown electric current, and then can avoid prior art
Thin film transistor (TFT), owing to the surface opposing with grid 12 at active layer 14 exists a small amount of electronics, can make source
Form galvanic circle between pole 15 and drain electrode 16, make the thin film transistor (TFT) of prior art exist and close electric current relatively
High problem.
In the specific implementation, the thin film transistor (TFT) provided for the embodiment of the present application one, as it is shown on figure 3, be
Reduce the contact resistance between source electrode 15 and drain electrode 16 and active layer 14, at source electrode 15 and active layer 14
Between the first ohmic contact layer 17 can also be set, the can also be arranged between drain electrode 16 and active layer 14
Two ohmic contact layers 18.Wherein, the material of the first ohmic contact layer 17 and the second ohmic contact layer 18 is general
Identical, it is specifically as follows N-shaped doped amorphous silicon N+a-si, it is, of course, also possible to source electrode can be improved for other
15 and other materials of drain electrode 16 and the contact resistance of active layer 14, in the specific implementation, can be according to need
Arrange flexibly, do not limit at this.For the first ohmic contact layer 17 and the second ohmic contact layer
18, in the concrete manufacturing process of thin film transistor (TFT), a mask making processes can be passed through, concurrently form
First ohmic contact layer 17 and the second ohmic contact layer 18.
The embodiment of the present application two, it is provided that a kind of thin film transistor (TFT), as shown in Figure 4, including: it is set in turn in
Active layer 24, gate insulator 23 and grid 22 on underlay substrate 21, wherein, this film crystal
Pipe also includes: the source electrode 25 being arranged between underlay substrate 21 and active layer 24, and is arranged at active layer
Drain electrode 26 between 24 and gate insulator 23.Equally, the thin film provided for the embodiment of the present application two is brilliant
Body pipe, its drain electrode 26 is typically connected with partial pixel electrode 29, so that thin film transistor (TFT) is when conducting,
The electrical signal of source electrode 25 can be transferred to pixel electrode 29, so that pixel electrode 29 shows accordingly.
The thin film transistor (TFT) that the embodiment of the present application two provides is top gate type thin film transistor, and this thin film transistor (TFT) exists
It is provided with active layer 24 on underlay substrate 21, on active layer 24, is provided with gate insulator 23,
Being provided with grid 22 on gate insulator 23, wherein, source electrode 25 is arranged at underlay substrate 21 and has
Between active layer 24, and drain and 26 be arranged between active layer 24 and gate insulator 23, source electrode 25 with
Drain electrode 26 lays respectively at different layers, and when the grid 22 of film crystal adds high level, active layer 24 is internal
Electronics move to the surface relative with grid 22, and this surface formed electron conducting layer, source can be made
The electronics of pole 25, can be by being formed after part active layer 24 corresponding directly over source electrode 25
Conductive layer move directly to drain 26, shorten the mobile route of electronics, and then make the embodiment of the present application two
The top gate type thin film transistor of the top gate type thin film transistor hinge structure provided, can have higher
Firing current, can avoid the electronics of top gate type thin film transistor of the prior art to arrive directly over drain electrode
During corresponding part active layer 24, also need to from the surface relative with grid 22 of active layer 24 to grid
Opposing surface, pole 22 is diffused；And the hole when grid 22 is in low level, in active layer 24
Move to the surface relative with grid 22 of active layer 24, make the electronics within active layer 24 and hole divide
Cloth is uniform, and this top gate type thin film transistor conducts electricity hardly, makes thin film transistor (TFT) have relatively low closedown electric current,
And then the top gate type thin film transistor of prior art can be avoided, due to active layer 24 with grid 22 phase
There is a small amount of electronics in the surface of the back of the body, can make to be formed between source electrode 25 and drain electrode 26 galvanic circle, make existing skill
The top gate type thin film transistor of art exists closes the problem that electric current is higher.
In the specific implementation, in order to avoid active layer 24 can produce photo-generated carrier when by illumination, and lead
Cause thin film transistor (TFT) closes the problem that electric current is bigger, the top gate type thin film provided for the embodiment of the present application two
Transistor, as it is shown in figure 5, thin film transistor (TFT) also includes that light shield layer 20, light shield layer 20 are positioned at underlay substrate
Between 21 and active layer 24, source electrode 25 is between light shield layer 20 and active layer 24, wherein, and active layer
24 upright projections on underlay substrate 21 are positioned at the light shield layer 20 upright projection on underlay substrate 21.
The thin film transistor (TFT) provided for the embodiment of the present application two, is improving source electrode 25 and drain electrode 26 with active
Contact resistance aspect between layer 24 is similar with the embodiment of the present application one, in the specific implementation, such as Fig. 6
Shown in, in order to reduce the contact resistance between source electrode 25 and drain electrode 26 and active layer 24, source electrode 25 with
First ohmic contact layer 27 can also be set between active layer 24, between drain electrode 26 and active layer 24 also
Second ohmic contact layer 28 can be set.Equally, the first ohmic contact layer 27 and the second ohmic contact layer 28
Material the most identical, be specifically as follows N-shaped doped amorphous silicon N+a-si, in the concrete system of thin film transistor (TFT)
During work, a mask making processes can be passed through, concurrently form the first ohmic contact layer 27 and second
Ohmic contact layer 28.
It should be noted that the film crystal that the embodiment of the present application one and the embodiment of the present application two are provided
Pipe, the material of its active layer can be non-crystalline silicon a-si, it is also possible to for p-type doped silicon p-Si, it is also possible to gold
Belong to oxide, in the specific implementation, can arrange the most flexibly, not limit at this.Specifically
Metal-oxide can be the metal-oxide containing at least one in In, Zn, Ga and Sn, such as,
It is specifically as follows InGaZnO or InSnZnO.
As it is shown in fig. 7, the bottom gate thin film transistor provided for the embodiment of the present application one and the end of prior art
I-on and the I-off experiment contrast figure of gate type thin film transistor.Wherein, the TFT that the embodiment of the present application one provides
The thin film transistor (TFT) that structure correspondence the embodiment of the present application Fig. 3 provides, the thin film transistor (TFT) corresponding diagram of prior art
Thin film transistor (TFT) shown in 1, as seen from the figure, under conditions of other are consistent (i.e., specifically its
The structure of his film layer, material etc. is the most consistent), the thin film transistor (TFT) that the embodiment of the present application provides, it opens electricity
Stream I-on is 1.44 μ A, and the I-on of prior art is 1.17 μ A, the thin film that i.e. the embodiment of the present application one provides
Transistor, the I-on of the thin film transistor (TFT) of its hinge structure is obviously improved；The application is implemented
The thin film transistor (TFT) that example one provides, it closes electric current I-off is 1.51pA, and the I-off of prior art is
The thin film transistor (TFT) that 8.80pA, i.e. the embodiment of the present application one provide, the thin film transistor (TFT) of its hinge structure
I-off have significantly reduction.
The embodiment of the present application three also provides for a kind of display base plate, implements including the embodiment of the present application one and the application
The thin film transistor (TFT) that example two provides.
The embodiment of the present application four also provides for a kind of liquid crystal indicator, including showing that the embodiment of the present application three provides
Show substrate.
In sum, the thin film transistor (TFT) that the embodiment of the present application one and the embodiment of the present application two provide, wherein,
Drain electrode is arranged between gate insulator and active layer, and source electrode and drain electrode lay respectively at different layers, and then thin
When the grid of film crystal adds high level, the electronics of source electrode can be by the surface shape relative with grid of active layer
The conductive layer become moves directly to drain electrode, it is to avoid electronics also need to be from the surface relative with grid of active layer to having
The surface opposing with grid of active layer is diffused, and shortens the motion path of electronics, and then makes the application real
Execute the thin film transistor (TFT) of the thin film transistor (TFT) hinge structure that example provides, can have bigger unlatching electricity
Stream；And when grid is in low level, the hole in active layer is moved to the surface relative with grid of active layer
Dynamic, make the electronics within active layer and hole distribution uniform, thin film transistor (TFT) conducts electricity hardly, makes thin film brilliant
Body pipe has less closedown electric current.
Obviously, those skilled in the art can carry out various change and modification without deviating from this Shen to the application
Spirit and scope please.So, if the application these amendment and modification belong to the application claim and
Within the scope of its equivalent technologies, then the application is also intended to comprise these change and modification.
Claims (9)
1. a thin film transistor (TFT), including: it is set in turn in the grid on underlay substrate, gate insulator
Layer and active layer, it is characterised in that also include: be arranged at the source electrode of described active layer, and arrange
Drain electrode between described gate insulator and described active layer.
2. a thin film transistor (TFT), including: it is set in turn in the active layer on underlay substrate, grid exhausted
Edge layer and grid, it is characterised in that also include: be arranged between described underlay substrate and described active layer
Source electrode, and it is arranged at the drain electrode between described active layer and described gate insulator.
3. thin film transistor (TFT) as claimed in claim 2, it is characterised in that described thin film transistor (TFT) also wraps
Including light shield layer, described light shield layer is between described underlay substrate and described active layer, and described source electrode is positioned at institute
Stating between light shield layer and described active layer, wherein, described active layer upright projection on underlay substrate is positioned at
In described light shield layer upright projection on underlay substrate.
4. thin film transistor (TFT) as claimed in claim 1 or 2, it is characterised in that described source electrode is with described
It is additionally provided with the first ohmic contact layer between active layer, between described drain electrode and described active layer, is additionally provided with
Two ohmic contact layers.
5. thin film transistor (TFT) as claimed in claim 4, it is characterised in that described first ohmic contact layer
It is N-shaped doped amorphous silicon N+a-si with the material of described second ohmic contact layer.
6. thin film transistor (TFT) as claimed in claim 1 or 2, it is characterised in that described drain electrode also with portion
Dividing pixel electrode to connect, described partial pixel electrode is between described drain electrode and described gate insulator.
7. thin film transistor (TFT) as claimed in claim 1 or 2, it is characterised in that the material of described active layer
Matter is non-crystalline silicon a-si, p-type doped silicon p-Si or metal-oxide.
8. a display base plate, it is characterised in that include film crystal as claimed in claim 1 or 2
Pipe.
9. a liquid crystal indicator, it is characterised in that include display base plate as claimed in claim 8.
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