CN105448760A - Method for improving test stability of wafer - Google Patents
Method for improving test stability of wafer Download PDFInfo
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- CN105448760A CN105448760A CN201410410248.5A CN201410410248A CN105448760A CN 105448760 A CN105448760 A CN 105448760A CN 201410410248 A CN201410410248 A CN 201410410248A CN 105448760 A CN105448760 A CN 105448760A
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- wafer
- wafer sort
- raising
- ultraviolet light
- stability
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Abstract
The invention provides a method for improving the test stability of a wafer. The method comprises at least the following steps of: irradiating and cleaning the surface of the wafer by using ultraviolet light in order to remove an impurity film on the surface of the wafer; baking the wafer in order to remove water on the surface of the wafer; and finally annealing the wafer in a protective gas in order to maintain the stability of the property of the wafer. The method for improving the test stability of the wafer may effectively remove pollutants such as AMC, water, hydrocarbon and the like, on the surface of the wafer, and prevents the pollutants from adhering to the surface of the wafer again and further prevents the pollutants on the surface of the wafer from interfering with the test of the wafer and influencing the result of the wafer performance testing so as to greatly improve the test stability of the wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of method improving wafer sort stability.
Background technology
Along with the fast development of semiconductor technology, wafer manufacturing process is in the more and more higher accuracy of technology controlling and process, equipment operating and material manufacturing requirement.Process error just likely causes scrapping completely of wafer, and a fatal defect can destroy a chip.In whole technical process, the assessment of wafer and processing quality quality is drawn by a large amount of tests and measurement.Test is mainly carried out on the ongoing wafer of PROCESS FOR TREATMENT, test chip, product chips and completed circuit.Test can find and the problem that correcting defect produces with fix the defect, and therefore, the accuracy of test result, reliability and stability are vital, is related to the yield of product and the efficiency problem of wafer factory.
But, because wafer contacts with air for a long time, the AMC (AirborneMolecularContaminant, air borne molecular contaminants) in air, moisture, hydrocarbon will be absorbed, make crystal column surface form one deck pollution layer.As shown in Figure 1, wafer 1 comprises the substrate 11 being positioned at bottom, the silica membrane 12 be prepared on substrate 11, and due to described silica membrane 12 Long Term Contact air, its surface can form very thin pollution layer 13.And the varied in thickness of described pollution layer 13 also can continue some months even several years with the change of environmental condition.The existence of described pollution layer 13 has brought very large interference to test result, and the Stability and veracity of wafer performance test is greatly affected.Therefore, before performance test is carried out to described wafer 1, need to remove described pollution layer 13 and the regrowth suppressing described pollution layer 13, guarantee the Stability and veracity of test result.
At present, the method of removal pollution layer relatively more conventional in wafer QE (quality) test is high-temperature baking (HardBake), wafer is placed in hot environment and toasts, the AMC of crystal column surface, moisture, hydrocarbon decompose by high temperature, volatilize, and pollutant leaves crystal column surface thereupon.High-temperature baking can decreasing pollution layer to a certain extent, but As time goes on, pollutant attaches to crystal column surface again, and visualize is that wafer thickness trends towards thickening.As shown in Figure 2, after carrying out high-temperature baking process to wafer, the thickness of wafer is slowly thickening to 21.59 dusts from 21.46 dusts, and pollutant attaches to crystal column surface again, the stability of extreme influence wafer sort.
The method removing pollution layer also has UV-irradiation and short annealing process, but the stability of these two kinds of methods is still not high.Therefore, how solving AMC, moisture, hydrocarbon in crystal column surface absorption air causes crystal column surface to produce pollution layer, avoid pollution layer to bring interference to wafer performance test, improve the stability of wafer sort, become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method improving wafer sort stability, for solving the problem of wafer sort poor stability in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of method improving wafer sort stability, the method for described raising wafer sort stability at least comprises the following steps:
Step one: utilize ultraviolet light to carry out irradiation cleaning, to remove the impurity film of crystal column surface to crystal column surface;
Step 2: toast described wafer, to remove the moisture of crystal column surface;
Step 3: carry out annealing in process to described wafer, described annealing in process is carried out in protective gas, to keep the stable of wafer character.
Preferably, the irradiation temperature of step one medium ultraviolet light is set to 150 DEG C ~ 400 DEG C.
Preferably, the irradiation time of step one medium ultraviolet light is set as 5s ~ 10s.
Preferably, the generating means of ultraviolet light described in step one is Cooper-Hewitt lamp.
Preferably, in step 2, baking temperature is set as 200 DEG C ~ 500 DEG C.
Preferably, in step 2, baking time is set as 20s ~ 30s.
Preferably, the apparatus for baking in step 2 is hot plate.
Preferably, in step 3, annealing heating temperature is set as 800 DEG C ~ 1100 DEG C.
Preferably, in step 3, the time of annealing heating constant temperature is set as 30s ~ 40s.
Preferably, protective gas described in step 3 is N
2.
As mentioned above, the method for raising wafer sort stability of the present invention, has following beneficial effect:
The method of raising wafer sort stability of the present invention effectively can remove the pollutant such as AMC, moisture, hydrocarbon of crystal column surface, and stop pollutant again to stick crystal column surface, avoid the pollutant of crystal column surface to bring interference to wafer sort, affect the result of wafer performance test, thus greatly improve the stability of wafer sort.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of contaminated wafer.
The tables of data of the wafer thickness change that Fig. 2 measures after being shown as high-temperature baking of the prior art.
Fig. 3 is shown as the method flow diagram of the raising wafer sort stability in the present invention.
Fig. 4 is shown as the block diagram of the present invention and prior art Performance comparision.
Element numbers explanation
1 wafer
11 substrates
12 silica membranes
13 pollution layers
S1 ~ S3 step one ~ step 3
T
1the irradiation time of ultraviolet light
T
1the irradiation temperature of ultraviolet light
T
2baking time
T
2baking temperature
T
3the time of annealing heating constant temperature
T
3annealing heating temperature
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 3 ~ Fig. 4.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Figure 3, the invention provides a kind of method improving wafer sort stability, the method for described raising wafer sort stability at least comprises the following steps:
Step one S1: utilize ultraviolet light to carry out irradiation cleaning, to remove the impurity film of crystal column surface to crystal column surface.
Ultraviolet rays cleaning technology is the photosensitized oxidation effect utilizing organic compound, reaches the object removing the organic substance be attached on material surface, and the material surface after light cleaning can reach " atomic cleanliness degree ".In the cleaning process of this step, by the pollution of described wafer towards upper, carry described wafer by conveyer belt mode, ultraviolet light irradiates the described wafer conveyer belt above wafer.Be equiped with ultraviolet light generating device above described conveyer belt, in the present embodiment, described ultraviolet light generating device is Cooper-Hewitt lamp.The irradiation time t of described ultraviolet light
1be set in 5s ~ 10s, in the present embodiment, the irradiation time t of described ultraviolet light
1be set as 8s.The irradiation temperature T of described ultraviolet light
1control at 150 DEG C ~ 400 DEG C, in the present embodiment, the irradiation temperature T of described ultraviolet light
1control at 230 DEG C.
The wavelength of ultraviolet light is set to 100nm ~ 400nm, and in the present embodiment, the wavelength of described ultraviolet light is set as 185nm and 245nm.Wavelength is the ultraviolet light wave of 185nm and 254nm, there is very high energy, when these photons are applied to cleaned material surface, because the ultraviolet light of most of hydrocarbon to 185nm wavelength has stronger absorbability, and ion, free state atom, excited molecule and neutron is resolved into, so-called photosensitization that Here it is after the energy of ultraviolet light absorbing 185nm wavelength.Oxygen molecule in air also can produce ozone and elemental oxygen after the ultraviolet light absorbing 185nm wavelength.Ozone has strong absorption equally to the ultraviolet light of 254nm wavelength, and ozone is decomposed into again elemental oxygen and oxygen.Its induced by atomic oxygen is as lively as a cricket, under its effect, carbon on body surface and the analyte of hydrocarbon can be combined to volatilizable gas: the effusion such as carbon dioxide and steam surface, thus thoroughly remove the carbon and organic pollution that stick on a surface of an.The ultraviolet energy of described crystal column surface accumulation is more, and its surface contaminant is fewer, and both inversely.
Step 2 S2: toast described wafer, to remove the moisture of crystal column surface.
The device toasted wafer can be the device that can realize arbitrarily baking process, and the advantages such as the thermal uniformity based on hot plate is good, easy temperature control, in the present embodiment, described apparatus for baking is hot plate.Directly the wafer after UV-irradiation is placed on hot plate after the heating, in advance to hot plate heating, the temperature T of described hot plate
2be set as 200 DEG C ~ 500 DEG C, in the present embodiment, the temperature T of described hot plate
2be set as 300 DEG C.Baking time t
2be set as 20s ~ 30s, in the present embodiment, described baking time t
2be set as 25s.Continuous high temperature makes the moisture of crystal column surface thoroughly volatilize, and other pollutants are taken away in the volatilization of simultaneous moisture.
Step 3 S3: carry out annealing in process to described wafer, to keep the stable of wafer character, stops pollutant again to stick crystal column surface.
Wafer through step one S1 and step 2 S2 process is put into annealing furnace and carry out short annealing (RTA, RapidThermalAnnealing) process.Protective gas is filled with, due to N in described annealing furnace
2stable in properties, not easily produce chemical reaction, in the present embodiment, described protective gas is N
2.Annealing heating temperature T in described annealing furnace
3be set as 800 DEG C ~ 1100 DEG C, in the present embodiment, the annealing heating temperature T in described annealing furnace
3be set as 925 DEG C.925 DEG C are quickly heated up to, the time t of annealing heating constant temperature in described annealing furnace
3be set as 30s ~ 40s, in the present embodiment, the time t of annealing heating constant temperature
3be set as 35s.Then fast cooling, makes inside wafer tissue reach or close to poised state, obtains good processing performance and serviceability, whole wafer performance finally tend towards stability.
The method of raising wafer sort stability of the present invention, by ultraviolet rays cleaning, decomposes the pollutants such as the hydrocarbon of crystal column surface; Then thoroughly to volatilize crystal column surface moisture with high-temperature baking, and take away other pollutants by the volatilization of moisture; Last at N
2carry out short annealing process under protection, strengthening crystal circle structure, decreasing pollution thing sticks crystal column surface again.The method of raising wafer sort stability of the present invention effectively can remove the pollutant such as AMC, moisture, hydrocarbon of crystal column surface, and stop pollutant again to stick crystal column surface, avoid the result brought interference to wafer sort, affect wafer performance test, thus greatly improve the stability of wafer sort.
In order to further illustrate the performance of the method for raising wafer sort stability of the present invention, the method for raising wafer sort stability of the present invention is done certain comparing with method of the prior art, and comparative result is as shown in the table:
(unit: dust)
| June 1 | July 1 | August 1 | Growth ratio | |
| Ultraviolet rays cleaning | 14.45 | 14.79 | 14.93 | 3.22％ |
| High-temperature baking | 14.21 | 14.61 | 14.92 | 4.76％ |
| Short annealing | 14.21 | 14.37 | 14.62 | 2.80％ |
| The present invention | 14.24 | 14.27 | 14.29 | 0.35％ |
Respectively different disposal is done to 4 identical wafers, ultraviolet rays cleaning process is done to the first wafer; High-temperature baking process is done to the second wafer; Short annealing process is done to the 3rd wafer; Ultraviolet rays cleaning process is first done to the 4th wafer, then does high-temperature baking process, last short annealing process; Repeatedly thickness measure is carried out to treated 4 wafer, is intuitively reflected the thickness of pollution layer by wafer thickness, in the present embodiment, carried out 3 wafer thickness measures, be respectively June 1, July 1 and August 1, midfeather one month.As seen from table, after doing ultraviolet rays cleaning process to the first wafer, the thickness of described first wafer is 14.45 dusts, and after one month, thickness increases is 14.79 dusts, after one month, the thickness of described first wafer increases again is 14.93 dusts, and wafer thickness increases 3.22%; After doing high-temperature baking process to the second wafer, the thickness of described second wafer is 14.21 dusts, and after one month, thickness increases is 14.61 dusts, and after one month, the thickness of described first wafer increases again is 14.92 dusts, and wafer thickness increases 4.76%; After doing short annealing process to the 3rd wafer, the thickness of described 3rd wafer is 14.21 dusts, and after one month, thickness increases is 14.37 dusts, and after one month, the thickness of described first wafer increases again is 14.62 dusts, and wafer thickness increases 2.80%; Ultraviolet rays cleaning process is first done to the 4th wafer, then high-temperature baking process is done, after last short annealing process, the thickness of described 4th wafer is 14.24 dusts, after one month, thickness increases is 14.27 dusts, after one month, the thickness of described first wafer increases again is 14.29 dusts, and wafer thickness increases 0.35%.Be illustrated in figure 4 the block diagram of this measurement data, as seen from the figure, with described first wafer of ultraviolet rays cleaning, with described second wafer of high-temperature baking process with all rise appreciably with the thickness of described 3rd wafer of short annealing process, and the thickness of described 4th wafer of method process of the present invention increases slowly.It can thus be appreciated that, the method of raising wafer sort stability of the present invention effectively can remove the pollutant such as AMC, moisture, hydrocarbon of crystal column surface, the performance of again sticking crystal column surface than other 3 kinds of methods prevention pollutants above-mentioned is strong, stability improves greatly, pollutant more can be avoided to bring interference to wafer sort, affect the result of wafer performance test, thus greatly improve the stability of wafer sort.
In sum, the invention provides a kind of method improving wafer sort stability, the method for described raising wafer sort stability at least comprises the following steps: first utilize ultraviolet light to carry out irradiation cleaning to crystal column surface; Again described wafer is toasted; Finally carry out annealing in process to described wafer, described annealing in process is carried out in protective gas.The method of raising wafer sort stability of the present invention effectively can remove the pollutant such as AMC, moisture, hydrocarbon of crystal column surface, and stop pollutant again to stick crystal column surface, avoid the pollutant of crystal column surface to bring interference to wafer sort, affect the result of wafer performance test, thus greatly improve the stability of wafer sort.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. improve a method for wafer sort stability, it is characterized in that, the method for described raising wafer sort stability at least comprises the following steps:
Step one: utilize ultraviolet light to carry out irradiation cleaning, to remove the impurity film of crystal column surface to crystal column surface;
Step 2: toast described wafer, to remove the moisture of crystal column surface;
Step 3: carry out annealing in process to described wafer, described annealing in process is carried out in protective gas, to keep the stable of wafer character.
2. the method for raising wafer sort stability according to claim 1, is characterized in that: the irradiation temperature of step one medium ultraviolet light is set as 150 DEG C ~ 400 DEG C.
3. the method for raising wafer sort stability according to claim 1, is characterized in that: the irradiation time of step one medium ultraviolet light is set as 5s ~ 10s.
4. the method for raising wafer sort stability according to claim 1, is characterized in that: the generating means of ultraviolet light described in step one is Cooper-Hewitt lamp.
5. the method for raising wafer sort stability according to claim 1, is characterized in that: in step 2, baking temperature is set as 200 DEG C ~ 500 DEG C.
6. the method for raising wafer sort stability according to claim 1, is characterized in that: in step 2, baking time is set as 20s ~ 30s.
7. the method for raising wafer sort stability according to claim 1, is characterized in that: the apparatus for baking in step 2 is hot plate.
8. the method for raising wafer sort stability according to claim 1, is characterized in that: in step 3, annealing heating temperature is set as 800 DEG C ~ 1100 DEG C.
9. the method for raising wafer sort stability according to claim 1, is characterized in that: in step 3, the time of annealing heating constant temperature is set as 30s ~ 40s.
10. the method for raising wafer sort stability according to claim 1, is characterized in that: protective gas described in step 3 is N
2.
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| CN201410410248.5A CN105448760A (en) | 2014-08-20 | 2014-08-20 | Method for improving test stability of wafer |
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| CN201410410248.5A CN105448760A (en) | 2014-08-20 | 2014-08-20 | Method for improving test stability of wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109300773A (en) * | 2018-08-15 | 2019-02-01 | 上海华力集成电路制造有限公司 | The surface treatment method of wafer |
| CN109427541A (en) * | 2017-08-29 | 2019-03-05 | 中芯国际集成电路制造(北京)有限公司 | The forming method of semiconductor devices |
| CN112038251A (en) * | 2020-08-31 | 2020-12-04 | 华虹半导体(无锡)有限公司 | Wafer electrical property detection method |
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Application publication date: 20160330 |