CN105084296B - Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer - Google Patents
Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer Download PDFInfo
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- CN105084296B CN105084296B CN201410173159.3A CN201410173159A CN105084296B CN 105084296 B CN105084296 B CN 105084296B CN 201410173159 A CN201410173159 A CN 201410173159A CN 105084296 B CN105084296 B CN 105084296B
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Abstract
A manufacturing method for an MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer comprises that a recess is formed on a substrate surface in advance as a capacitor gap, and a deep trench isolation and bonding technology is employed for preparing two electrodes of a capacitor. A technology of removing a sacrificial layer is not needed by using the method, the adhesion problem of a movable electrode and a substrate is avoided, and the technology stability and the product yield are substantially improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly to a kind of making side of MEMS capacitive pressure transducer
Method.
Background technology
MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) is using integrated circuit system
Make technology and micro-processing technology micro structure, microsensor, microactrator, control process circuit or even interface, communication and power supply
Deng miniature integrated system on one or more chip for the manufacture.
Pressure transducer is the transducer that pressure signal is converted to electrical signal, is important in business-like sensor
Ingredient.Compared with conventional pressure sensor, adopt MEMS technology preparation pressure transducer volume, power consumption, weight with
And the aspect such as price has fairly obvious advantage.At present, it is widely used in automobile using the pressure transducer that MEMS technology makes
The various fields such as industry, biomedicine, Industry Control, the energy and semi-conductor industry.According to the difference of operation principle, pressure
Sensor is broadly divided into pressure resistance type, condenser type and piezoelectric type etc..Piezoresistive pressure sensor is by carrying on silicon fiml and silicon fiml
Stress sensitive pressure drag is constituted, and changes pressure drag resistance when silicon fiml deforms under pressure, can by bridge measurement change in resistance
To obtain the change of pressure.At present, piezoresistive pressure sensor is high with semiconductor technology compatibility due to its manufacturing process, manufactures
Process is simple, the advantages of interface circuit is simple, is the mainstream technology of current pressure transducer.But piezoresistive pressure sensor is but
There is temperature characterisitic poor, sensitivity is low, the shortcomings of power consumption is big, be not appropriate for the application of some low-power consumption and high precision.
With the maturation of MEMS processing technique, add that capacitance pressure transducer size itself is little, low cost, temperature characterisitic
Good, high precision, low in energy consumption many advantages, such as so that capacitance pressure transducer technology gets growing concern for.Traditional
Capacitance pressure transducer, generally based on surface micro-fabrication technology, to make movable electrode using polysilicon, and the method is held
Easily realize integrated with cmos circuit, but the sticking problem of the membrane stress being brought, movable electrode and substrate is difficult to solve.
Content of the invention
Based on this it is necessary to provide a kind of manufacture method of MEMS capacitive pressure transducer, the method does not need to remove
Sacrifice layer process, it is to avoid movable electrode and the adhesion of substrate, substantially increases the stability of technique and the yield rate of product.
A kind of manufacture method of MEMS capacitive pressure transducer, including step：
Substrate and substrate are provided.
Form recess over the substrate.
Form groove on the substrate, described groove is in the shape of closing lines on the substrate, described blockade line
The region that bar surrounds is less than described recess area.
Form insulating barrier in described groove inner wall, be subsequently filled polysilicon and form polysilicon layer.
By described substrate formed groove and described substrate formed recess while bonding, make described closing lines enclose
The region becoming falls in described recess area.
Described substrate is carried out with reduction processing, is at least thinned to the bottom of described groove, make described groove by described substrate
It is separated into interior and outer plate.
Passivation layer is formed on the thinning face of described substrate.
Top electrode contact hole is formed on described passivation layer to connect described interior, bottom electrode is formed on described passivation layer
Contact hole is to connect described outer plate.
In described Top electrode contact hole makes and connects, the upper electrode metal lead of piece, makes in described bottom electrode contact hole
Connect the bottom electrode metal lead wire of outer plate.
Wherein in an embodiment, the material of described substrate and substrate is monocrystal silicon.
Wherein in an embodiment, described groove is wide 5 μm～and 30 μm, deep 5 μm～100 μm.
Wherein in an embodiment, described insulating barrier is silicon dioxide layer.
Wherein in an embodiment, in described groove inner wall, insulating barrier is formed by depositing technics.
Wherein in an embodiment, described insulating layer thickness 100nm～2000nm.
Wherein in an embodiment, described substrate is carried out with reduction processing, is at least thinned to the polysilicon of described groove
Layer.
Wherein in an embodiment, described passivation layer is silicon dioxide layer, and thickness is 1000nm～3000nm.
Wherein in an embodiment, described passivation layer deposits layer of metal layer, and will be described by etching technics
Top electrode contact hole and surrounding deposit formed metal level as upper electrode metal lead, by described bottom electrode contact hole and surrounding
The metal level that deposit is formed is as bottom electrode metal lead wire.
Wherein in an embodiment, described metal level is aluminium lamination, described aluminium lamination thickness 1000nm～4000nm.
The manufacture method of above-mentioned MEMS capacitive pressure transducer, the method is using in advance in substrate surface formation recess
As capacitance gap, make two electrodes (Top electrode and bottom electrode) of electric capacity, this side by deep trench isolation and bonding techniques
Method does not need to remove sacrifice layer process, it is to avoid movable electrode (Top electrode) and the adhesion problems of substrate, substantially increases technique
Stability and product yield rate.
Secondly, the method adopts monocrystal silicon as two electrodes of electric capacity, it is to avoid the residual stress of thin film.Again, should
Method to form two electrodes of electric capacity using deep groove isolation structure, reduces the parasitic capacitance of device, substantially increases device
Sensitivity.
Brief description
Fig. 1 is the flow chart of a present invention wherein embodiment；
Fig. 2 is the substrate top view of a present invention wherein embodiment；
Fig. 3 is the side of substrate sectional view of the A-A ' line along along Fig. 2；
Fig. 4 is the substrate top view of a present invention wherein embodiment；
Fig. 5 is the substrate side sectional view of the B-B ' line along along Fig. 4；
Fig. 6 is the substrate side sectional view after forming insulating barrier and polysilicon layer in groove；
Fig. 7 is substrate and substrate bonding trailing flank sectional view；
Fig. 8 is the side sectional view that substrate is carried out with reduction processing back substrate and substrate；
Fig. 9 is the side sectional view forming passivation layer and upper/lower electrode contact hole back substrate and substrate；
Figure 10 is the side sectional view forming metal level back substrate and substrate；
Figure 11 is the side sectional view forming upper/lower electrode metal lead wire back substrate and substrate.
Specific embodiment
Below in conjunction with the accompanying drawings, the specific embodiment of the present invention is described in detail.
Fig. 1 is the flow chart of one embodiment of the invention, incorporated by reference to Fig. 2 to Figure 11.
A kind of manufacture method of MEMS capacitive pressure transducer, including step：
Step S100：Substrate 100 and substrate 200 are provided.The material of substrate 100 and substrate 200 is semi-conducting material, at this
It is low-resistance single crystal silicon in example, resistivity is 0.01 Ω .cm～0.05 Ω .cm.Shape distinguished the most at last by substrate 100 and substrate 200
Become two electrodes of electric capacity, using monocrystal silicon as electric capacity two electrodes, it is to avoid the residual stress of thin film.
Step S110：See Fig. 2 and Fig. 3, form recess 120 on the substrate 100.Recess 120 is rectangular, and the length of side on every side exists
Between 500 μm～1000 μm.The depth of recess 120 between 10 μm～100 μm, equal to the gap of bottom crown on electric capacity.Formed
The method of recess 120 can be etching process, such as wet etching or dry etching.
Step S120：See Fig. 4 and Fig. 5, groove 220 is formed on substrate 200, groove 220 is in blockade line on substrate 200
The shape of bar 240, the region that closing lines 240 surround is less than recess area 140 (thick line see in Fig. 2 and Fig. 4).Groove 220
, between 5 μm～30 μm, deep H is between 5 μm～100 μm for wide W.
Step S130：See Fig. 6, insulating barrier 260 is formed in groove 220 inwall by depositing technics, is then given birth to by extension
Insulating barrier 260 in groove 220 for the long technique forms polysilicon, and groove 220 is filled up, and forms polysilicon layer 280.Insulating barrier is
Silicon dioxide layer, thick 100nm～2000nm.The isolation structure of groove 220 is made by epi polysilicon, can make profundity
Wide ratio isolation structure, groove 220 is wider, and its electric isolating effect is better, more can reduce the parasitic capacitance of device, so can be significantly
Improve the sensitivity of device.
Step S140：See Fig. 7, substrate 200 is formed the one side of groove 220 and substrate 100 forms a face key of recess 120
Close, so that the region that closing lines 240 surround is fallen in recess area 140.Bonding can adopt static bonding process.
Step S150：See Fig. 8, reduction processing is carried out to substrate 200, be thinned to the polysilicon layer 280 in groove 220, make
Groove 220 by substrate separation become in piece 200A and outer plate 200B, interior 200A become the movable electrode of electric capacity.Reduction processing
Mode includes wet etching, dry etching and mechanical reduction.
Step S160：See Fig. 9, passivation layer 300 is formed on the thinning face of substrate 200 by depositing technics.Passivation layer 300
For silicon dioxide layer, thickness is 1000nm～3000nm.
Step S170：See Fig. 9, Top electrode contact hole 320 is formed on passivation layer 300 by etching technics, Top electrode connects
Contact hole 320 runs through passivation layer 300, makes the external world can connect interior piece 200A, electricity under being formed on passivation layer 300 by etching technics
Pole contact hole 340, bottom electrode contact hole 340 runs through passivation layer 300, makes the external world can connect outer plate 200B.
Step S180：See Figure 10 and Figure 11, passivation layer 300 deposits layer of metal layer 400, and will by etching technics
The upper electrode metal layer of Top electrode contact hole 320 and surrounding deposit formation contacts as upper electrode metal lead 420, by bottom electrode
The bottom electrode metal level of hole 340 and surrounding deposit formation is as bottom electrode metal lead wire 440.Upper electrode metal lead 420 and under
It is insulation between electrode metal lead 440.Metal level is aluminium lamination, described aluminium lamination thickness 1000nm～4000nm.
Outer plate 200B is bonded together with substrate 100, the region (outer plate that substrate 100 is surrounded with closing lines 240
200B) as the fixed electrode of electric capacity, when pressure acts on movable electrode (i.e. interior piece 200A), movable electrode deforms upon,
Two electrode spacings are changed, produces corresponding capacitance variation.Because capacitance is with change in pressure, electricity
Capacitance is mutually corresponding with pressure value, is consequently formed pressure to the signal conversion of electric capacity.
The present embodiment provides a kind of manufacture method of MEMS capacitive pressure transducer, and the method is using in advance in substrate
100 surfaces form recess 120 and are used as capacitance gap, isolate and be bonded two electrodes to make electric capacity by groove 220.This
Method does not need to remove sacrifice layer process, it is to avoid the adhesion of movable electrode and substrate, substantially increase technique stability and
The yield rate of product.Secondly, the method adopts monocrystal silicon as two electrodes of electric capacity, it is to avoid the residual stress of thin film.Again
Secondary, the method to form two electrodes of electric capacity using deep groove isolation structure, reduces the parasitic capacitance of device, substantially increases
The sensitivity of device.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, some deformation can also be made and improve, these broadly fall into the guarantor of the present invention
Shield scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of manufacture method of MEMS capacitive pressure transducer is it is characterised in that include step：
Substrate and substrate are provided；
Form recess over the substrate；
Form groove on the substrate, described groove is in the shape of closing lines on the substrate, described closing lines enclose
The region becoming is less than recess area；
Form insulating barrier in described groove inner wall, be subsequently filled polysilicon and form polysilicon layer；
By described substrate formed groove and described substrate form the while bonding of recess, so that described closing lines is surrounded
Region falls in described recess area；
Described substrate is carried out with reduction processing, is at least thinned to the bottom of described groove, make described groove by described substrate separation
Piece and outer plate in one-tenth；
Passivation layer is formed on the thinning face of described substrate；
Top electrode contact hole is formed on described passivation layer to connect described interior, bottom electrode contact is formed on described passivation layer
Hole is to connect described outer plate；
In described Top electrode contact hole makes and connects, the upper electrode metal lead of piece, makes in described bottom electrode contact hole and connects
The bottom electrode metal lead wire of outer plate.
2. MEMS capacitive pressure transducer according to claim 1 manufacture method it is characterised in that：Described substrate and
The material of substrate is monocrystal silicon.
3. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that described groove width
5 μm～30 μm, deep 5 μm～100 μm.
4. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that described insulating barrier
For silicon dioxide layer.
5. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that in described groove
Inwall forms insulating barrier by depositing technics.
6. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that described insulating barrier
Thick 100nm～2000nm.
7. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that to described substrate
Carry out reduction processing, be at least thinned to the polysilicon layer of described groove.
8. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that described passivation layer
For silicon dioxide layer, thickness is 1000nm～3000nm.
9. the manufacture method of MEMS capacitive pressure transducer according to claim 1 is it is characterised in that in described passivation
On layer deposit layer of metal layer, and by etching technics using described Top electrode contact hole and surrounding deposit formation metal level as
Upper electrode metal lead, the metal level forming described bottom electrode contact hole and surrounding deposit are as bottom electrode metal lead wire.
10. the manufacture method of MEMS capacitive pressure transducer according to claim 9 is it is characterised in that described metal
Layer is aluminium lamination, described aluminium lamination thickness 1000nm～4000nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107246895B (en) * | 2017-06-13 | 2020-07-03 | 北京世纪科环生态农业研究院 | Multifunctional sensor for plant greenhouse |
| CN108254120A (en) * | 2017-11-13 | 2018-07-06 | 胡波 | Capacitance pressure transducer, with self-shield |
| CN108195885A (en) * | 2017-12-25 | 2018-06-22 | 佛山市车品匠汽车用品有限公司 | A kind of silicon substrate integrated gas sensors |
| CN114608728A (en) * | 2022-03-10 | 2022-06-10 | 苏州敏芯微电子技术股份有限公司 | Capacitive pressure sensor and preparation method thereof |
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| CN103604538A (en) * | 2013-11-29 | 2014-02-26 | 沈阳工业大学 | MEMS pressure sensor chip based on SOI technology and manufacturing method thereof |
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| JP2004191137A (en) * | 2002-12-10 | 2004-07-08 | Fujikura Ltd | Electrostatic capacitance pressure sensor |
| DE102010038534A1 (en) * | 2010-07-28 | 2012-02-02 | Robert Bosch Gmbh | Sensor element for capacitive differential pressure measurement |
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|---|---|---|---|---|
| CN1181624A (en) * | 1996-05-20 | 1998-05-13 | 哈里公司 | Pre-bond cavity air bridge |
| CN101449347A (en) * | 2006-04-13 | 2009-06-03 | Lv传感器股份有限公司 | Capacitive micro- electro-mechanical sensors with single crystal silicon electrodes |
| CN102062662A (en) * | 2010-11-05 | 2011-05-18 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN102183335A (en) * | 2011-03-15 | 2011-09-14 | 迈尔森电子（天津）有限公司 | Mems pressure sensor and manufacturing method thereof |
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Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |