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CN104143609A - Obstruction film and manufacturing method thereof - Google Patents

Obstruction film and manufacturing method thereof Download PDF

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Publication number
CN104143609A
CN104143609A CN201410386722.5A CN201410386722A CN104143609A CN 104143609 A CN104143609 A CN 104143609A CN 201410386722 A CN201410386722 A CN 201410386722A CN 104143609 A CN104143609 A CN 104143609A
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inorganic oxide
oxide film
obstruct membrane
flexible substrate
vapor deposition
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于甄
胡坤
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Zhangjiagang Kangdexin Optronics Material Co Ltd
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Zhangjiagang Kangdexin Optronics Material Co Ltd
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Priority to CN201410386722.5A priority Critical patent/CN104143609A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention discloses an obstruction film and a manufacturing method thereof. The obstruction film comprises a flexible base, a first inorganic oxide thin film, a second inorganic oxide thin film and a protective film, wherein the first inorganic oxide thin film is arranged on the flexible base, the second inorganic oxide thin film is arranged on the first inorganic oxide thin film, the protective film is arranged on the second inorganic oxide thin film, the first inorganic oxide thin film is formed by means of the sputtering or evaporating technology, and the second inorganic oxide thin film is formed by means of the chemical vapor deposition technology. The manufacturing method comprises the steps of providing the flexible base, forming the first inorganic oxide thin film on the flexible base through the sputtering or evaporating technology, forming the second inorganic oxide thin film on the first inorganic oxide thin film through the chemical vapor deposition technology, and forming the protective film on the second inorganic oxide thin film. The obstruction performance of the obstruction film can be improved, and the production cost of the obstruction film can be reduced.

Description

Obstruct membrane and preparation method thereof
Technical field
The present invention relates to the technical field of sealing technology of electronic component, in particular to a kind of Obstruct membrane and preparation method thereof.
Background technology
In the BEOL of electronic component, need to seal electronic component, so that each functional layer of electronic component becomes to separate with steam, oxygen etc. in atmosphere, prevent from reacting and causing electronic component to lose efficacy by each functional layer and steam, oxygen etc., and then improve the life-span of electronic component.For example, for Organic Light Emitting Diode (OLED), the compositions such as airborne steam and oxygen be easy to OLED in cathodic metal (as aluminium, magnesium, calcium etc.) react, cause the work function of cathodic metal to increase, simultaneously the composition such as steam and oxygen also can with OLED in hole transmission layer and electron transfer layer generation chemical reaction, these all will cause component failure.Therefore, need to effectively encapsulate OLED, make each functional layer of OLED become to separate with steam, oxygen etc. in atmosphere.Again for example, in area of solar cell, also need solar battery sheet to encapsulate.If packaging effect is bad, airborne steam can direct contact solar cell sheet, makes solar battery sheet oxidized, thereby affects the life-span of solar cell.
Usually, the method that electronic component is sealed comprises: on electronic component, form Obstruct membrane, and it is bonding to adopt epoxy resin to carry out Obstruct membrane and electronic component, so that each functional layer of electronic component becomes to separate with steam, oxygen etc. in atmosphere.But airborne steam can see through Obstruct membrane enter electronic component, or steam can affect the adhesive property of epoxy resin, makes to produce gap between Obstruct membrane and epoxy resin, and then makes steam directly contact electronic component, thereby affect the life-span of electronic component.For example, while adopting said method to seal OLED, its water vapor transmittance (WVTR) does not reach the requirement that be the OLED of 10000h useful life far away, and exceedes the OLED of 50000h useful life, often needs water vapor transmittance (WVTR) lower than 5 × 10 -6g/m 2day.
In order to continue to improve the performance of Obstruct membrane, technical staff has carried out a large amount of research to Obstruct membrane.Application number be 201210548514.1 Chinese patent application by OLED surface attachment one deck for absorbing any desiccant particles of steam, stop steam to infiltrate the object of OLED to realize.Application number be 201210190863.0 Chinese patent application a kind of preparation of the method by hot evaporation is disclosed, by upper LiF rete, the composite barrier film that absorbent central layer and lower LiF rete form, so that flexible display is encapsulated, and stop steam to infiltrate flexible display.Application number is that 201210222231.8 Chinese patent application discloses a kind of Obstruct membrane with nanostructured layers, this nanostructured layers is the skin of packaging film, and the surface distributed of this nanostructured layers has several projections, this structure can make the adhesion on water droplet and nanostructured layers surface be far smaller than the surface tension of water droplet itself, thereby increase the contact angle (being greater than 150 degree) of water droplet and nanostructured layers, make water droplet be difficult to be adsorbed on the surface of nanostructured layers, and then improved the useful life of packaging film.
Although technical staff has carried out a large amount of research to Obstruct membrane, but also there are a lot of problems in current Obstruct membrane technology: the first, the barrier property of Obstruct membrane is still lower, make not reach designing requirement the useful life of electronic component, therefore also need to continue to improve the barrier property of Obstruct membrane; The second, above-mentioned Obstruct membrane by MULTILAYER COMPOSITE, add particle or drier obtains, thereby increased production time and raw materials consumption, and increased its production cost; Three, water vapor rejection film tends to sustain damage in transport and use procedure, is unsuitable for and uses and install.Therefore, how to develop a kind of Obstruct membrane with high-barrier efficiency, become the key subjects of needing at present solution badly.
Summary of the invention
The present invention aims to provide a kind of Obstruct membrane and preparation method thereof, to improve the barrier property of Obstruct membrane, and reduces its production cost.
For this reason, the invention provides a kind of Obstruct membrane, this Obstruct membrane comprises: flexible substrate; The first inorganic oxide film, is arranged on flexible substrate, and the first inorganic oxide film is prepared from by sputter or evaporation technology; The second inorganic oxide film, is arranged on the first inorganic oxide film, and the second inorganic oxide film is prepared from by chemical vapor deposition method; Diaphragm, is arranged on the second inorganic oxide film.
Further, the first inorganic oxide film and the second inorganic oxide film are respectively independently selected from any in tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide and vanadium oxide.
Further, the thickness of flexible substrate is 10~125 μ m, and the thickness of the first inorganic oxide film is 10~100nm, and the thickness of the second inorganic oxide film is 5~60nm.
Further, the material of formation flexible substrate is PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene.
Further; diaphragm comprises flexible polymeric materials layer and be arranged at the lip-deep tack coat of flexible polymeric materials layer, and the material of flexible polymeric materials layer is PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene.
Further, Obstruct membrane also comprises the lip-deep hardening coat that is arranged at flexible substrate, and the first inorganic oxide film is arranged on the surface of hardening coat.
Further, the material that forms hardening coat is the mixture of hardening resin and leveling auxiliary agent, and hardening resin is polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate.
Further, Obstruct membrane is for the encapsulation of electronic component, and electronic component is organic solar batteries sheet, thin film lithium-ion battery or OLED device.
Meanwhile, the present invention also provides a kind of manufacture method of Obstruct membrane, and this manufacture method comprises: flexible substrate is provided; On flexible substrate, form the first inorganic oxide film by sputter or evaporation technology; On the first inorganic oxide film, form the second inorganic oxide film by chemical vapor deposition method; On the second inorganic oxide film, form diaphragm.
Further, forming in the step of diaphragm, by coating technique, diaphragm is fitted on the second inorganic oxide film.
Further, before forming the step of the first inorganic oxide film, manufacture method is also included in the step that applies hardening coat on the surface of flexible substrate.
Further, the step of formation hardening coat comprises: hardening resin and leveling auxiliary agent are mixed to get to mixture, and hardening resin is polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate; Mixture is applied on the surface of flexible substrate, to form hardening coat.
Further, chemical vapor deposition method is low-pressure chemical vapor deposition, aumospheric pressure cvd, sub-aumospheric pressure cvd, high vacuum chemical vapour deposition, plasma enhanced chemical vapor deposition, high density plasma CVD, fast thermal chemical vapor deposition, ald, improvement chemical deposition or metallo-organic compound chemical vapour deposition (CVD).
Obstruct membrane provided by the invention comprises flexible substrate and is set in turn in the Obstruct membrane of the first inorganic oxide film, the second inorganic oxide film and diaphragm on flexible substrate; and the first inorganic oxide film is prepared from by sputter or evaporation technology, the second inorganic oxide film is prepared from by chemical vapor deposition method.On this flexible substrate surface, there are a lot of particles, and this first inorganic oxide film can cover these particles, make the surface of form the first inorganic oxide film more smooth, thereby be conducive to form the second inorganic oxide film of even compact more on the first inorganic oxide film, and then improved the barrier property of Obstruct membrane; This first inorganic oxide film can also stop a large amount of steam effectively, thereby has reduced the steam that enters the second inorganic oxide film, and then has improved the barrier property of Obstruct membrane; Simultaneously, this first inorganic oxide film is prepared from by sputter or evaporation technology, its cost of manufacture is lower compared with the second inorganic oxide film being prepared from by chemical vapor deposition method, and because the second inorganic oxide film has had lower water vapor transmittance, make this Obstruct membrane under the prerequisite with high obstructing performance, to reduce production cost.On the other hand, in the first inorganic oxide film being prepared from by sputter or evaporation technology, can produce hole (it is of a size of several dusts to number nanometer), and form the second inorganic oxide film on the first inorganic oxide film time, employing chemical vapor deposition method can be at the material of hole the inside intussusception growth the second inorganic oxide film, make the first inorganic oxide film finer and close, thereby improved the barrier property of Obstruct membrane.On the one hand, this diaphragm can avoid the second inorganic oxide film to sustain damage again, and this diaphragm can directly fit on electronic component simultaneously, is convenient to electronic component to encapsulate.
Brief description of the drawings
The accompanying drawing that forms a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the cross-sectional view of the Obstruct membrane that one embodiment of the present invention provides;
Fig. 2 shows the schematic flow sheet of the manufacture method of the Obstruct membrane that one embodiment of the present invention provides;
Fig. 3 shows the water vapor transmittance graph of a relation over time of the Obstruct membrane that embodiment 1 obtains; And
Fig. 4 shows the water vapor transmittance graph of a relation over time of the Obstruct membrane that comparative example 1 and comparative example 2 obtain.
Embodiment
It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the application in detail.
It should be noted that the term that used is only in order to describe embodiment here, but not intention restriction is according to the application's illustrative embodiments.As used herein, unless context explicitly points out in addition, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, in the time that use belongs to " comprising " and/or " comprising " in this manual, it indicates and has feature, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for describing as the spatial relation of a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in using or operating except the described in the drawings orientation of device.For example, if the device in accompanying drawing is squeezed, be described as " other devices or structure above " or " other devices or structure on " device after will be positioned as " other devices or construct below " or " other devices or construct under ".Thereby exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or in other orientation), and the space that used here is relatively described and made respective explanations.
From background technology, the barrier property of existing Obstruct membrane is lower, and its production cost is higher.The present inventor studies for the problems referred to above, has proposed a kind of Obstruct membrane.As shown in Figure 1, this Obstruct membrane comprises: flexible substrate 10; The first inorganic oxide film 20, is arranged on flexible substrate 10, and the first inorganic oxide film 20 is prepared from by sputter or evaporation technology; The second inorganic oxide film 30, is arranged on the first inorganic oxide film 20, and the second inorganic oxide film 30 is prepared from by chemical vapor deposition method; Diaphragm 40, is arranged on the second inorganic oxide film 30.
In above-mentioned Obstruct membrane, on 10 surfaces, there are a lot of particles in flexible substrate, and the first inorganic oxide film 20 can cover these particles, make the surface of form the first inorganic oxide film 20 more smooth, thereby be conducive to form the second inorganic oxide film 30 of even compact more on the first inorganic oxide film 20, and then improved the barrier property of Obstruct membrane; The first inorganic oxide film 20 can also stop a large amount of steam effectively, thereby has reduced the steam that enters the second inorganic oxide film 30, and then has improved the barrier property of Obstruct membrane; Simultaneously, the first inorganic oxide film 20 is prepared from by sputter or evaporation technology, its cost of manufacture is lower compared with the second inorganic oxide film 30 being prepared from by chemical vapor deposition method, and because the second inorganic oxide film 30 has had lower water vapor transmittance, make Obstruct membrane under the prerequisite with high obstructing performance, to reduce production cost.On the other hand, in the first inorganic oxide film 20 being prepared from by sputter or evaporation technology, can produce hole (it is of a size of several dusts to number nanometer), and form the second inorganic oxide film 30 on the first inorganic oxide film 20 time, employing chemical vapor deposition method can be at the material of hole the inside intussusception growth the second inorganic oxide film 30, make the first inorganic oxide film 20 finer and close, thereby improved the barrier property of Obstruct membrane.On the one hand, diaphragm 40 can avoid the second inorganic oxide film 30 to sustain damage again, and diaphragm 40 can directly fit on electronic component simultaneously, is convenient to electronic component to encapsulate.
Below by the illustrative embodiments of describing in more detail according to Obstruct membrane provided by the invention.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, it is in order to make the open thorough and complete of the application that these execution modes are provided, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
In above-mentioned Obstruct membrane, the material of the first inorganic oxide film 20 and the second inorganic oxide film 30 can be identical or not identical.Those skilled in the art can instruction according to the present invention selects the material of the first inorganic oxide film 20 and the second inorganic oxide film 30.In order further to improve the barrier property of Obstruct membrane, one preferred embodiment in, the material of the first inorganic oxide film 20 is tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide or vanadium oxide; The material of the second inorganic oxide film 30 is tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide or vanadium oxide.
Meanwhile, in above-mentioned Obstruct membrane, the thickness of each layer can be set according to actual process demand.Preferably, the thickness of flexible substrate 10 is 10~125 μ m, and the thickness of the first inorganic oxide film 20 is 10~100nm, and the thickness of the second inorganic oxide film 30 is 5~60nm.Now, Obstruct membrane has better barrier property.
In above-mentioned Obstruct membrane, the material that forms flexible substrate 10 can be the common material in this area, such as PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene etc.Diaphragm 40 comprises flexible polymeric materials layer and is arranged at the lip-deep tack coat of flexible polymeric materials layer; and Obstruct membrane is connected and sealed by tack coat and electronic component to be packaged, and flexible polymeric materials layer can be PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene etc.
Alternatively, above-mentioned Obstruct membrane also comprises the lip-deep hardening coat that is arranged at flexible substrate 10, and the first inorganic oxide film 20 is arranged on the surface of hardening coat.After forming hardening coat, the surface roughness of hardening coat only has several nanometers (being conventionally less than 2nm), thereby has met the requirement of planarization.The material of hardening coat can be the mixture of hardening resin and leveling auxiliary agent, and wherein hardening resin can be polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate.
Above-mentioned Obstruct membrane provided by the invention can be for the encapsulation of common electronic component.Particularly, inventor adopts the specific experiment research that above-mentioned Obstruct membrane encapsulates organic solar batteries sheet, thin film lithium-ion battery or OLED device.Result shows, above-mentioned Obstruct membrane can encapsulate well to organic solar batteries sheet, thin film lithium-ion battery or OLED device, thereby has improved the useful life of organic solar batteries sheet, thin film lithium-ion battery or OLED device.
Meanwhile, the present invention also provides a kind of manufacture method of Obstruct membrane.As shown in Figure 2, this manufacture method comprises: flexible substrate is provided; On flexible substrate, form the first inorganic oxide film by sputter or evaporation technology; On the first inorganic oxide film, form the second inorganic oxide film by chemical vapor deposition method; On the second inorganic oxide film, form diaphragm.The barrier property of the prepared Obstruct membrane of this manufacture method is improved, and its production cost is minimized.
Below by the manufacture method illustrative embodiments of describing in more detail according to Obstruct membrane provided by the invention.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, it is in order to make the open thorough and complete of the application that these execution modes are provided, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
First, provide flexible substrate.The material of this flexible substrate can be the common flexible material in this area, such as PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene etc.
Then, on flexible substrate, form the first inorganic oxide film by sputter or evaporation technology.Preferably, the material of the first inorganic oxide film is tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide or vanadium oxide.The concrete technology parameter of above-mentioned sputter or evaporation technology can be carried out with reference to prior art, does not repeat them here.
The roughness on the flexible substrate surface obtaining due to previous step has tens nanometers, before forming the step of the first inorganic oxide film, can also on the surface of flexible substrate, apply hardening coat.The surface roughness of hardening coat only has several nanometers (being conventionally less than 2nm), thereby has met the requirement of planarization.The step that forms hardening coat comprises: hardening resin and leveling auxiliary agent are mixed to get to mixture, and hardening resin is polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate; Mixture is applied on the surface of flexible substrate, to form hardening coat.Coating process can be spraying or spin coating, and its concrete technology parameter can be with reference to prior art.
Next, on the first inorganic oxide film, form the second inorganic oxide film by chemical vapor deposition method.Preferably, the material of the second inorganic oxide film is tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide or vanadium oxide.Chemical vapor deposition method can be low-pressure chemical vapor deposition, aumospheric pressure cvd, sub-aumospheric pressure cvd, high vacuum chemical vapour deposition, plasma enhanced chemical vapor deposition, high density plasma CVD, fast thermal chemical vapor deposition, ald, improvement chemical deposition or metallo-organic compound chemical vapour deposition (CVD).The concrete technology parameter of above-mentioned chemical vapor deposition method can be carried out with reference to existing, does not repeat them here.
Finally, on the second inorganic oxide film, form diaphragm.This diaphragm can comprise flexible polymeric materials layer and be formed at the lip-deep tack coat of flexible polymeric materials layer.Forming in the step of diaphragm, can diaphragm be fitted on the second inorganic oxide film by coating technique.
Further illustrate Obstruct membrane provided by the invention and preparation method thereof below in conjunction with embodiment.
Embodiment 1
The present embodiment provides a kind of Obstruct membrane and preparation method thereof.Wherein, this manufacture method comprises the following steps:
The flexible substrate being made up of PETG (PET) is provided, and on the surface of flexible substrate, apply the hardening coat that one deck is made up of polyacrylate resin, wherein the thickness of flexible substrate is 125 μ m, and is detected and found out that the surface roughness of hardening coat is 1.24nm by AFM;
On flexible substrate, form the first inorganic oxide film by sputtering technology, wherein the material of the first inorganic oxide film is tin indium oxide (ITO), the first inorganic oxide film thickness be 20nm;
On the first inorganic oxide film, form the second inorganic oxide film by chemical vapor deposition method, wherein the material of the second inorganic oxide film is Al 2o 3, the thickness of the second inorganic oxide film is 10nm;
On the second inorganic oxide film, form diaphragm, this diaphragm comprises PETG (PET) and is formed at the tack coat on PETG (PET).
Comparative example 1
This comparative example provides a kind of Obstruct membrane and preparation method thereof.Wherein, this manufacture method comprises the following steps:
The flexible substrate being made up of PETG (PET) is provided, and on the surface of flexible substrate, apply the hardening coat that one deck is made up of polyacrylate resin, wherein the thickness of flexible substrate is 125 μ m, and is detected and found out that the surface roughness of hardening coat is 1.28nm by AFM;
On flexible substrate, form indium tin oxide films by sputtering technology, wherein the thickness of indium tin oxide films is 20nm;
On indium tin oxide films, form diaphragm, this diaphragm comprises PETG (PET) and is formed at the tack coat on PETG (PET).
Comparative example 2
This comparative example provides a kind of Obstruct membrane and preparation method thereof.Wherein, this manufacture method comprises the following steps:
The flexible substrate being made up of PETG (PET) is provided, and on the surface of flexible substrate, apply the hardening coat that one deck is made up of polyacrylate resin, wherein the thickness of flexible substrate is 125 μ m, and is detected and found out that the surface roughness of hardening coat is 1.22nm by AFM;
On flexible base, form Al by chemical vapor deposition method 2o 3film, wherein Al 2o 3the thickness of film is 10nm;
At Al 2o 3on film, form diaphragm, this diaphragm comprises PETG (PET) and is formed at the tack coat on PETG (PET).
Test: at 38 DEG C, under 100%RH condition, the Obstruct membrane that the water vapor rejection testing equipment by MOCON company obtains embodiment 1 and comparative example 1 to 2 carries out testing vapor transmission.Wherein, the water vapor transmittance of the Obstruct membrane that embodiment 1 obtains over time graph of a relation is asked for an interview Fig. 3, and the water vapor transmittance of the Obstruct membrane that comparative example 1 and comparative example 2 obtain over time graph of a relation is asked for an interview Fig. 4.
Can find out from Fig. 3 and Fig. 4, reach after stable state, the water vapor transmittance of the Obstruct membrane (making by sputter) that comparative example 1 obtains is 1.6 × 10 -2g/m 2day, the water vapor transmittance of the Obstruct membrane (making by CVD) that comparative example 2 obtains is 1.9 × 10 -3g/m 2day, and the water vapor transmittance of the Obstruct membrane that embodiment 1 obtains is 5 × 10 -5g/m 2day.Visible, the water vapor transmittance of the Obstruct membrane (making in conjunction with CVD by sputter) that comparative example 2 obtains is the highest, order of magnitude of water vapor transmittance of the Obstruct membrane that the water vapor transmittance of the Obstruct membrane that comparative example 2 obtains obtains lower than comparative example 1, and the water vapor transmittance minimum of the Obstruct membrane that embodiment 1 obtains, water vapor rejection performance is best.
As can be seen from the above embodiments, the above-mentioned example of the present invention has been realized following technique effect:
(1) the invention provides and a kind ofly comprise flexible substrate and be set in turn in the Obstruct membrane of the first inorganic oxide film, the second inorganic oxide film and diaphragm on flexible substrate; and the first inorganic oxide film is prepared from by sputter or evaporation technology, the second inorganic oxide film is prepared from by chemical vapor deposition method.
(2) on flexible parent metal surface, exist some particles to affect surface roughness, and this first inorganic oxide film can cover these particles, make the surface of form the first inorganic oxide film more smooth, thereby be conducive to form the second inorganic oxide film of even compact more on the first inorganic oxide film, and then improved the barrier property of Obstruct membrane; This first inorganic oxide film can also stop a large amount of steam effectively, thereby has reduced the steam that enters the second inorganic oxide film, and then has improved the barrier property of Obstruct membrane; Simultaneously, this first inorganic oxide film is prepared from by sputter or evaporation technology, its cost of manufacture is lower compared with the second inorganic oxide film being prepared from by chemical vapor deposition method, and because the second inorganic oxide film has had lower water vapor transmittance, make this Obstruct membrane under the prerequisite with high obstructing performance, to reduce production cost.
(3) in the first inorganic oxide film being prepared from by sputter or evaporation technology, can produce hole (it is of a size of several dusts to number nanometer), and form the second inorganic oxide film on the first inorganic oxide film time, employing chemical vapor deposition method can be at the material of hole the inside intussusception growth the second inorganic oxide film, make the first inorganic oxide film finer and close, thereby improved the barrier property of Obstruct membrane.
(4) this diaphragm can avoid the second inorganic oxide film to sustain damage, and this diaphragm can directly fit on electronic component simultaneously, is convenient to electronic component to encapsulate.
These are only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (13)

1. an Obstruct membrane, is characterized in that, described Obstruct membrane comprises:
Flexible substrate;
The first inorganic oxide film, is arranged on described flexible substrate, and described the first inorganic oxide film is prepared from by sputter or evaporation technology;
The second inorganic oxide film, is arranged on described the first inorganic oxide film, and described the second inorganic oxide film is prepared from by chemical vapor deposition method; And
Diaphragm, is arranged on described the second inorganic oxide film.
2. Obstruct membrane according to claim 1, it is characterized in that, described the first inorganic oxide film and described the second inorganic oxide film are respectively independently selected from any in tin indium oxide, aluminium oxide, silica, titanium oxide, zirconia, zinc oxide, hafnium oxide, tantalum oxide, germanium oxide or vanadium oxide.
3. Obstruct membrane according to claim 1, is characterized in that, the thickness of described flexible substrate is 10~125 μ m, and the thickness of described the first inorganic oxide film is 10~100nm, and the thickness of described the second inorganic oxide film is 5~60nm.
4. Obstruct membrane according to claim 3, is characterized in that, the material that forms described flexible substrate is PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene.
5. Obstruct membrane according to claim 1; it is characterized in that; described diaphragm comprises flexible polymeric materials layer and be arranged at the lip-deep tack coat of described flexible polymeric materials layer, and the material of described flexible polymeric materials layer is PETG, polyethylene, polypropylene, PEN, polymethyl methacrylate, polyimides or polystyrene.
6. Obstruct membrane according to claim 1, is characterized in that, described Obstruct membrane also comprises the lip-deep hardening coat that is arranged at described flexible substrate, and described the first inorganic oxide film is arranged on the surface of described hardening coat.
7. Obstruct membrane according to claim 6, it is characterized in that, the material that forms described hardening coat is the mixture of hardening resin and leveling auxiliary agent, and described hardening resin is polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate.
8. according to the Obstruct membrane described in any one in claim 1 to 7, it is characterized in that, described Obstruct membrane is for the encapsulation of electronic component, and described electronic component is organic solar batteries sheet, thin film lithium-ion battery or OLED device.
9. a manufacture method for Obstruct membrane, is characterized in that, described manufacture method comprises:
Flexible substrate is provided;
On described flexible substrate, form the first inorganic oxide film by sputter or evaporation technology;
On described the first inorganic oxide film, form the second inorganic oxide film by chemical vapor deposition method; And
On described the second inorganic oxide film, form diaphragm.
10. manufacture method according to claim 9, is characterized in that, forming in the step of described diaphragm, by coating technique, described diaphragm is fitted on described the second inorganic oxide film.
11. according to the manufacture method described in claim 9 or 10, it is characterized in that, before forming the step of described the first inorganic oxide film, described manufacture method is also included in the step that applies hardening coat on the surface of described flexible substrate.
12. manufacture methods according to claim 11, is characterized in that, the step that forms described hardening coat comprises:
Hardening resin and leveling auxiliary agent are mixed to get to mixture, and described hardening resin is polyurethane acrylate, hexyl fat acrylate derivative or dipentaerythritol five acrylate; And
Described mixture is applied on the surface of described flexible substrate, to form described hardening coat.
13. manufacture methods according to claim 9, it is characterized in that, described chemical vapor deposition method is low-pressure chemical vapor deposition, aumospheric pressure cvd, sub-aumospheric pressure cvd, high vacuum chemical vapour deposition, plasma enhanced chemical vapor deposition, high density plasma CVD, fast thermal chemical vapor deposition, ald, improvement chemical deposition or metallo-organic compound chemical vapour deposition (CVD).
CN201410386722.5A 2014-08-07 2014-08-07 Obstruction film and manufacturing method thereof Pending CN104143609A (en)

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Application publication date: 20141112