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AU2002242565A1 - Semi-conductor laser fitted with a mirror - Google Patents

Semi-conductor laser fitted with a mirror

Info

Publication number
AU2002242565A1
AU2002242565A1 AU2002242565A AU2002242565A AU2002242565A1 AU 2002242565 A1 AU2002242565 A1 AU 2002242565A1 AU 2002242565 A AU2002242565 A AU 2002242565A AU 2002242565 A AU2002242565 A AU 2002242565A AU 2002242565 A1 AU2002242565 A1 AU 2002242565A1
Authority
AU
Australia
Prior art keywords
mirror
semi
conductor laser
laser fitted
fitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002242565A
Inventor
Thierry Aellen
Jerome Faist
Daniel Hofstetter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpes Lasers SA
Original Assignee
Alpes Lasers SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpes Lasers SA filed Critical Alpes Lasers SA
Publication of AU2002242565A1 publication Critical patent/AU2002242565A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AU2002242565A 2001-04-10 2002-03-28 Semi-conductor laser fitted with a mirror Abandoned AU2002242565A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01810353.1 2001-04-10
EP01810353A EP1249905A1 (en) 2001-04-10 2001-04-10 Semiconductor laser with mirror
PCT/CH2002/000179 WO2002082603A2 (en) 2001-04-10 2002-03-28 Semi-conductor laser fitted with a mirror

Publications (1)

Publication Number Publication Date
AU2002242565A1 true AU2002242565A1 (en) 2002-10-21

Family

ID=8183849

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002242565A Abandoned AU2002242565A1 (en) 2001-04-10 2002-03-28 Semi-conductor laser fitted with a mirror

Country Status (3)

Country Link
EP (1) EP1249905A1 (en)
AU (1) AU2002242565A1 (en)
WO (1) WO2002082603A2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2941364B2 (en) * 1990-06-19 1999-08-25 株式会社東芝 Semiconductor laser device
US6055254A (en) * 1998-09-23 2000-04-25 Lucent Technologies Inc. Quantum cascade light emitter with pre-biased internal electronic potential

Also Published As

Publication number Publication date
WO2002082603A2 (en) 2002-10-17
EP1249905A1 (en) 2002-10-16
WO2002082603A3 (en) 2002-12-27

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase